WO2009128439A1 - Exposure method and device, and method for manufacturing device - Google Patents
Exposure method and device, and method for manufacturing device Download PDFInfo
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- WO2009128439A1 WO2009128439A1 PCT/JP2009/057488 JP2009057488W WO2009128439A1 WO 2009128439 A1 WO2009128439 A1 WO 2009128439A1 JP 2009057488 W JP2009057488 W JP 2009057488W WO 2009128439 A1 WO2009128439 A1 WO 2009128439A1
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- masks
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- exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention relates to an exposure technique for exposing an object through patterns formed on a plurality of masks, and a device manufacturing technique using the exposure technique.
- a plate glass plate or glass on which a pattern of a mask (reticle, photomask, etc.) is applied via a projection optical system
- a projection exposure apparatus for projecting onto a semiconductor wafer or the like is used.
- a plate for manufacturing a liquid crystal display element has become increasingly larger, and in recent years, a plate exceeding 2 m square has been used.
- the mask is also increased in size. The cost of the mask needs to maintain the flatness of the mask substrate, and the manufacturing process becomes more complicated as the area becomes larger. Further, for example, in order to form a thin film transistor portion of a liquid crystal display element, a mask for 4 to 5 layers is usually required, which requires a great deal of cost.
- an enlargement composed of a plurality of partial projection optical systems that are arranged in two rows in the scanning direction and have an enlargement magnification that is arranged adjacent to a direction orthogonal to the scanning direction hereinafter referred to as a non-scanning direction.
- a scanning projection exposure apparatus scanning exposure apparatus
- a mask pattern is made smaller than that of a plate by using a system multilens (see, for example, Patent Document 1).
- the mask pattern is divided into strips (strips) into a plurality of pattern areas corresponding to each partial projection optical system,
- the projected image of the pattern is transferred onto the plate in a non-scanning direction by one scanning exposure.
- the present invention provides an exposure method and apparatus, and a device manufacturing method that can suppress the occurrence of splicing errors when a pattern formed on a plurality of masks is transferred onto a plate (substrate).
- the purpose is to do.
- An exposure method includes a supporting step for supporting a plurality of masks on which a pattern is formed on a first stage, and moving at least one control target mask among the plurality of masks individually with respect to the first stage.
- the exposure apparatus according to the present invention includes a first stage that supports a plurality of masks on which a pattern is formed, a second stage on which an object is placed, and at least one control target mask among the plurality of masks.
- a control device that individually moves the first stage to control the relative arrangement of the plurality of masks, and illumination that irradiates the object with exposure light through the patterns of the plurality of masks in which the relative arrangement is controlled. And a system.
- the device manufacturing method includes a transfer step of transferring a plurality of mask patterns onto a photosensitive substrate placed on the second stage using the exposure method or exposure apparatus of the present invention, and the patterns are transferred. And developing the photosensitive substrate and forming a transfer pattern layer having a shape corresponding to the pattern on the photosensitive substrate, and a processing step of processing the photosensitive substrate through the transfer pattern layer. It is a waste.
- At least one mask to be controlled among a plurality of masks on which a pattern is formed is individually moved with respect to a stage that supports the plurality of masks, and the relative arrangement of the plurality of masks is controlled. Therefore, it is possible to suppress the occurrence of a joint error when the patterns formed on the plurality of masks are transferred onto an object such as a substrate, and the pattern can be transferred onto the object with high accuracy.
- FIG. 2 is a cross-sectional view illustrating configurations of two partial illumination optical systems and two projection optical systems in FIG. 1.
- FIG. 3A is a perspective view showing the mask stage MST and its driving mechanism
- FIG. 3B is a perspective view showing the mask stage MST.
- 4A is a plan view showing an example of the arrangement of actuator systems on the mask stage MST
- FIG. 4B is an enlarged view showing the pressing portion 40B
- FIG. 4C is a cross-sectional view showing the actuator 39B.
- FIG. 4D is an enlarged cross-sectional view taken along the line IVD-IVD in FIG.
- FIG. 6A is a plan view showing the arrangement of the masks M1 to M7 on the mask stage MST
- FIG. 6B is a plan view showing the plate PT on the plate stage.
- 7A is a plan view showing the plate PT during scanning exposure
- FIG. 7B is a plan view showing the mask stage MST during scanning exposure
- FIG. 7C is a plane showing the mask M1 during scanning exposure.
- FIG. It is a flowchart which shows an example of the exposure operation
- FIG. 10A is a perspective view showing a state in which the masks M1 to M7 are placed on the carrier 45 in the second embodiment, and FIG. 10B shows the carrier 45 in FIG. 10A on the mask stage MST. It is a perspective view which shows the state mounted in.
- FIG. 11A is a plan view showing the mask stage MST of FIG. 10B
- FIG. 11B is an enlarged cross-sectional view taken along line XIB-XIB of FIG. 11A.
- FIG. 12A is a perspective view showing a state in which the masks M1 to M7 are placed on the carrier 45 in the third embodiment
- FIG. 12B is a plan view showing the mask M1 in FIG.
- FIG. 12C is an enlarged view showing the pressing portion 40SB in FIG.
- FIG. 12A, and FIG. 12D is an enlarged view showing the actuator 39SB in FIG. It is a perspective view which shows the pre-alignment apparatus of 2nd Embodiment.
- FIG. 14A is a plan view showing the carrier 47A of the fourth embodiment
- FIG. 14B is a plan view showing a state where the masks M1 to M7 are placed on the carrier 47A
- FIG. It is a perspective view which shows the state which is conveying the carrier 47A.
- FIG. 15A is a plan view showing a mask stage MST on which the carrier 47A of FIG. 14C is placed
- FIG. 15B is a cross-sectional view taken along line XVB-XVB of FIG. . It is a flowchart which shows the manufacturing method of a liquid crystal device.
- FIG. 1 shows a schematic configuration of a step-and-scan projection exposure apparatus (scanning exposure apparatus) EX of the present embodiment.
- the projection exposure apparatus EX is formed on a plurality of (seven in FIG. 1) small masks M1, M2, M3, M4, M5, M6, and M7 with light from an exposure light source (not shown).
- Illumination device IU that illuminates a pattern, mask stage MST that moves while holding masks M1 to M7, and a plurality of catadioptric projection optical systems that project magnified images of the patterns of masks M1 to M7 on plate PT, respectively
- Projection optical apparatus PL including PL1 to PL7, a plate stage PTST (see FIG. 2) that holds and moves the plate PT, a drive mechanism (not shown) including a mask stage MST, a linear motor that drives the plate stage PTST, and the like.
- a main control system 57 composed of a computer for comprehensively controlling the operation of the drive mechanism and the like.
- the plate PT of the present embodiment is a 1.9 ⁇ 2.2 m square, 2.2 ⁇ 2.4 m square, 2.4 ⁇ 2.8 m square coated with a photoresist (photosensitive material), or
- This is a glass plate for manufacturing a liquid crystal display element having a rectangular flat plate shape of 2.8 ⁇ 3.2 m square or the like.
- the X axis and the Y axis are taken in two orthogonal directions on the surface on which the plate PT is placed on the plate stage PTST (a surface substantially parallel to the surface of the plate PT), and the Z axis is taken perpendicular to the surface.
- a rotation method around an axis parallel to the Z axis will be described as the ⁇ z direction.
- the XY plane is set parallel to the horizontal plane
- the ⁇ Z direction is set to the vertical direction.
- the direction in which the masks M1 to M7 and the plate PT are moved in synchronism is set in the X direction.
- light emitted from an exposure light source (not shown) made of, for example, an ultra-high pressure mercury lamp is reflected by the elliptical mirror 2 and the dichroic mirror 3 in the illumination device IU and enters the collimating lens 4.
- Light in a wavelength region including g-line (wavelength 436 nm), h-line (wavelength 405 nm), and i-line (wavelength 365 nm) light is extracted by the reflective film of the elliptical mirror 2 and the reflective film of the dichroic mirror 3, and the extracted light Enters the collimating lens 4.
- the illumination light converted into parallel light by the collimating lens 4 passes through a wavelength selection filter 5 that transmits only light in a predetermined exposure wavelength range, a neutral density filter 6, and a condenser lens 7, and an incident port 8 a of the light guide fiber 8. It is focused on.
- the light guide fiber 8 includes an entrance 8a and seven exits (hereinafter referred to as exits 8b, 8c, 8d, 8e, 8f, 8g, and 8h).
- the illumination light that has entered the entrance 8a propagates through the inside of the light guide fiber 8, and then is divided and emitted from the 7 exits 8b to 8h, and the 7 partial illumination optics that partially illuminate the masks M1 to M7. It enters each of the systems (hereinafter referred to as partial illumination optical systems IL1, IL2, IL3, IL4, IL5, IL6, and IL7).
- the illumination light that has passed through the partial illumination optical systems IL1 to IL7 illuminates the corresponding illumination areas on the masks M1 to M7 almost uniformly.
- An illuminating device IU is configured using optical members from the elliptical mirror 2 to the partial illumination optical systems IL1 to IL7.
- Illumination light from the illumination areas on the masks M1 to M7 is projected into seven projection optical systems (hereinafter referred to as projection optical systems PL1, PL2, PL3, respectively) that project images of a part of the patterns of the masks M1 to M7 onto the plate PT.
- projection optical systems PL1, PL2, PL3, respectively that project images of a part of the patterns of the masks M1 to M7 onto the plate PT.
- PL4, PL5, PL6, and PL7 projection optical systems
- Projection optical systems (partial projection optical systems) PL1 to PL7 form images of patterns on the pattern surfaces (lower surfaces) of the masks M1 to M7 on the plate PT, respectively.
- FIG. 3A is a perspective view showing the mask stage MST and its driving mechanism and the like
- FIG. 3B is a perspective view showing the mask stage MST.
- the mask stage MST is placed on a pair of rod-shaped guide members 59A and 59B supported by a column (not shown) parallel to the X axis in the X direction via a vacuum preload type gas bearing. It is mounted so as to be movable in the ⁇ z direction. Further, from the movers 60Aa and 60Ba fixed to both ends in the Y direction of the mask stage MST and the stators 60Ab and 60Bb supported by a column (not shown), respectively, in the X direction with respect to the guide members 59A and 59B.
- a pair of linear motors 60A and 60B for moving the mask stage MST are configured. It is also possible to control the rotation angle of the mask stage MST in the ⁇ z direction within a predetermined range by changing the drive amount of the linear motors 60A and 60B in the X direction.
- the measurement beams are irradiated from the laser interferometers 56X1 and 56Y2 to the two movable mirrors 55X1 and 55X2 fixed to the ⁇ X direction end of the mask stage MST, and fixed to the ⁇ Y direction end of the mask stage MST.
- the rod-shaped moving mirror 55Y is irradiated with a measurement beam from the laser interferometer 56Y.
- the laser interferometers 56X1, 56X2, and 56Y use, for example, a reference mirror (not shown) provided in a column (not shown) that supports the projection optical apparatus PL as a reference, the position of the mask stage MST in the X direction, the Y direction, and ⁇ z
- the direction rotation angle is measured.
- the stage controller in the main control system 57 controls the position and speed of the mask stage MST in the X direction and the rotation angle in the ⁇ z direction via the linear motors 60A and 60B.
- FIG. 3B seven rectangular openings 21 are formed in the mask stage MST for allowing the illumination light that has passed through the masks M1 to M7 to pass therethrough.
- actuator systems AC1, AC2, AC2 for driving the masks M1 to M7 with respect to the mask stage MST in the X direction, the Y direction, and the ⁇ z direction so as to surround each opening 21 on the mask stage MST.
- AC3, AC4, AC5, AC6, and AC7 are provided.
- Masks M1 to M7 are individually driven with respect to mask stage MST by actuator systems AC1 to AC7.
- FIG. 4A is a plan view showing an example of the arrangement of the actuator systems AC1 to AC7 on the mask stage MST in FIG. 3A
- FIG. 4D is a IVD-IVD line in FIG. 4A
- FIG. 4A each of the masks M1 to M7 has four air pad portions 41A, 41B, 41C, which constitute a vacuum preload type gas bearing on the mask stage MST so that the pattern area PA covers the opening 21, respectively.
- 41D By 41D, it floats and is supported in a state where movement in the X direction and Y direction and rotation in the ⁇ z direction are possible.
- the plurality of exhaust holes 42A of the air pad portion 41D of the mask stage MST communicate with the vacuum pump 43 through the vent holes 42B and a flexible pipe (not shown),
- the air hole 42C communicates with the pressurizing source 44 through the air hole 42D and a flexible pipe (not shown).
- the air pad portion 41D and the mask M1 have a size of about several ⁇ m.
- the gap g (for example, about 5 ⁇ m) is maintained.
- the other air pad portions 41A to 41C are configured similarly.
- the air pad portion 41D protrudes from the upper surface of the mask stage MST with a predetermined step, but the upper surfaces of the air pad portions 41A to 41D are made to be the same height as other portions of the mask stage MST.
- the actuator system AC1 includes an actuator 39A that drives the mask M1 in the X direction, and two actuators 39B and 39C that drive the mask M1 in the Y direction at two locations separated in the X direction.
- Opposing actuators 39A, 39B, and 39C are provided with pressing portions 40A, 40B, and 40C that urge the mask M1 in the X and Y directions, respectively.
- the rotation angle of the mask M1 in the ⁇ z direction can be controlled by changing the drive amounts of the Y-axis actuators 39B and 39C.
- the actuators 39B and 39C are arranged by rotating the actuator 39A by 90 °, and the pressing portions 40B and 40C are arranged by rotating the pressing portion 40A by 90 °.
- the tip portions of the pressing portions 40A to 40C can be retracted in the reverse direction at any time so that a certain amount of clearance can be secured between each tip portion of the actuator system AC1 and the mask M1. ing.
- the other actuator systems AC2 to AC7 have substantially the same configuration as the actuator system AC1. However, the two adjacent actuator systems (for example, AC1 and AC2) are displaced in the X direction so that the Y-axis actuators 39B and 39C and the Y-axis pressing portions 40B and 40C do not mechanically interfere with each other. .
- the actuator systems AC1 to AC7 are driven by an actuator drive system 58 (see FIGS. 4B and 4C) under the control of the main control system 57.
- the relationship between the drive signals supplied from the actuator drive system 58 to the actuators 39A to 39C and the movement amounts of the corresponding masks M1 to M7 is stored in advance in the storage unit in the actuator drive system 58.
- Information on the respective target drive amounts of the masks M1 to M7 is supplied from the main control system 57 to the actuator drive system 58, and as an example, the actuator drive system 58 receives only the target drive amounts corresponding to the masks M1 to M7.
- Actuators 39A-39C are driven by open loop control so that they are driven. It is possible to provide a sensor (capacitance type gap sensor or the like) for detecting the displacement of the masks M1 to M7 with respect to the mask stage MST and drive the actuators 39A to 39C in a closed loop manner.
- the pressing portion 40B includes a main body portion 40a fixed to the mask stage MST, a moving member 40c made of a magnetic material supported so as to be detachable from the main body portion 40a, and a moving member 40c. It includes a coil spring 40d that urges outward, and a metal sphere 40e that is rotatably provided at the tip of the moving member 40c and that directly contacts the mask M1.
- the moving member 40c (spherical body 40e) can be retracted to the position B1 on the main body 40a side by energizing the coil 40b incorporated in the main body 40a from the actuator drive system 58.
- a leaf spring member or the like can be used as the pressing portion 40B.
- the actuator 39B is fixed to the mask stage MST, and has a stator 39a having an opening in which a large number of small piezoelectric elements (piezoelectric elements) are arranged around the opening, and an opening in the stator 39a. And a metal sphere 39c that is rotatably provided at the tip of the mover 39b and directly contacts the mask M1. That is, the actuator 39B is a direct-acting piezo motor, and by driving a large number of piezo elements in the stator 39a from the actuator drive system 58, the mover 39b can be moved by a desired drive amount. Further, in the piezo motor, when the driving power is not supplied to the stator 39a, the position of the mover 39b is maintained at the previous position.
- the plate PT is sucked and held on a plate stage PTST (see FIG. 2) via a plate holder (not shown), and an X-axis movable mirror 50X and a Y-axis movable mirror 50Y are provided on the plate stage PTST. Is provided.
- the measurement beams are irradiated to the movable mirrors 50X and 50Y from the X-axis laser interferometers 51X1 and 51X2 and the Y-axis laser interferometers 51Y1, 51Y2, and 51Y3.
- Laser interferometers 51X1, 51X2, and 51Y1 to 51Y3 use, for example, a reference mirror (not shown) provided in a column (not shown) that supports the projection optical apparatus PL as a reference for the positions of the plate stage PTST in the X and Y directions, The rotation angle in the ⁇ z direction is measured.
- the stage control unit in the main control system 57 via a drive mechanism (not shown), the position and speed in the X and Y directions and the rotation angle in the ⁇ z direction of the plate stage PTST (plate PT). To control.
- the partial illumination optical systems IL1, IL3, IL5, IL7 in the first column on the ⁇ X direction side have a predetermined interval in the non-scanning direction (Y direction) orthogonal to the scanning direction.
- the first-row projection optical systems PL1, PL3, PL5, and PL7 that are arranged and provided corresponding to the partial illumination optical systems IL1, IL3, IL5, and IL7 are also arranged in the non-scanning direction in the projection optical apparatus PL. They are arranged at a predetermined interval.
- the second column partial illumination optical systems IL2, IL4, and IL6 are arranged on the + X direction side with respect to the first column and at a predetermined interval in the non-scanning direction, and the partial illumination optical systems IL2, IL4, and IL6.
- the second row projection optical systems PL2, PL4, and PL6 provided corresponding to are also arranged in the + X direction and at a predetermined interval in the non-scanning direction with respect to the first row.
- the first row of projection optical systems PL1, PL3, PL5, and PL7 have fields of view V1, V3, V5, and V7 along straight lines parallel to the non-scanning direction on the first surface on which the masks M1 to M7 are respectively arranged. Images are formed in image fields (projection regions) I1, I3, I5, and I7 arranged at predetermined intervals along a straight line parallel to the non-scanning direction on the second surface on which the plate PT is disposed.
- the projection optical systems PL2, PL4, and PL6 in the second row have visual fields V2, V4, and V6 along straight lines parallel to the non-scanning direction on the first surface, respectively, and non-scanning on the second surface.
- Images are formed in image fields (projection regions) I2, I4 and I6 (I2 and I4 are not shown) arranged at predetermined intervals along a straight line parallel to the direction.
- the visual fields V1 to V7 are also illumination areas (illumination fields) on the masks M1 to M7 by the partial illumination optical systems IL1 to IL7.
- the auto focus system 52 for aligning the focus positions (Z-direction positions) of the masks M1 to M7 and the plate PT and the plate PT are aligned.
- the off-axis alignment system 54 is arranged.
- the projection optical systems PL1 to PL7 are catadioptric projection optical systems that form a primary image, which is an enlarged image in the field of view (here, equal to the illumination area) on the masks M1 to M7, in the image field on the plate PT.
- the magnification in the scanning direction (X direction) exceeds +1 times, and the magnification in the non-scanning direction (Y direction) is less than -1.
- the projection optical systems PL1 to PL7 form enlarged images on the plate PT that are upright in the scanning direction of the patterns of the masks M1 to M7 and inverted in the non-scanning direction, respectively.
- the absolute value of the magnification in the scanning direction and the non-scanning direction is about 2.5.
- the partial illumination optical systems IL1 to IL7 have the same configuration. Further, the projection optical systems PL1, PL3, PL5, and PL7 in the first row have the same configuration, and the projection optical systems PL2, PL4, and PL6 in the second row have a configuration obtained by rotating the projection optical system PL1 by 180 °.
- the configuration of the two partial illumination optical systems IL1 and IL2 and the two projection optical systems PL1 and PL2 in the first row and the second row will be typically described.
- FIG. 2 is a diagram showing the configuration of the two partial illumination optical systems IL1 and IL2 in FIG. 1 and the two projection optical systems PL1 and PL2 corresponding thereto.
- the light beams emitted from the exit ports 8b and 8c of the light guide fiber 8 enter the partial illumination optical systems IL1 and IL2 and are collected by the collimating lenses 9b and 9c.
- the condensed light beams are incident on fly-eye lenses 10b and 10c, which are optical integrators, and light beams from a number of secondary light sources formed on the rear focal planes of the fly-eye lenses 10b and 10c are respectively condenser lenses 11b. And 11c illuminate the masks M1 and M2 almost uniformly.
- the projection optical system PL1 includes a concave reflecting mirror CCMb, a first lens group G1b and a second lens having an optical axis AX11 parallel to the Z axis and disposed in the optical path between the mask M1 and the concave reflecting mirror CCMb.
- Group G2b first deflection member FM1b that deflects light traveling in the + Z direction from the second lens group G2b along the optical axis AX12 in the ⁇ X direction, and deflects light traveling in the ⁇ X direction in the ⁇ Z direction
- a third lens group G3b having an optical axis AX13 which is disposed in the optical path between the second deflection member FM2b and the plate PT and is parallel to the Z axis.
- Projection optical system PL1 is an off-axis optical system using concave reflecting mirror CCMb.
- an aperture stop ASb for determining the numerical aperture on the plate PT side of the projection optical system PL1 is provided in the vicinity (pupil plane) of the concave reflecting mirror CCMb.
- the projection optical system PL2 is symmetrical to the projection optical system PL1 and includes a first lens group G1c, a second lens group G2c, and a concave reflecting mirror CCMc, which are disposed along an optical axis AX21 parallel to the Z axis.
- a third lens group G3c having an optical axis AX23 parallel to the axis, a first deflecting member FM1c that bends the light flux from the second lens group G2c in the + Z direction along the optical axis AX22, and the + X direction.
- a second deflection member FM2c that bends the light beam in the ⁇ Z direction and an aperture stop ASc disposed on the pupil plane of the projection optical system PL2 are provided.
- the projection optical systems PL1 and PL2 are provided with a magnification correction mechanism (not shown).
- the configurations and magnifications of the projection optical systems PL1 and PL2 are arbitrary, and the projection optical systems PL1 and PL2 may be configured by a refractive system, for example. Further, a projection optical system that forms an intermediate image may be used as the projection optical systems PL1 and PL2.
- the distance between the optical axes AX11 and AX21 of the first lens groups G1b and G1c in the X direction (scanning direction) is Dm
- the optical axes AX13 and AX23 of the third lens groups G3b and G3c are set.
- FIG. 6A is a plan view showing the arrangement of the masks M1 to M7 on the mask stage MST of FIG.
- the masks M1 to M7 are arranged along the Y direction (non-scanning direction), and the trapezoidal fields V1 to V7 of the projection optical systems PL1 to PL7 in FIG.
- the pattern area PA is provided.
- the reason why the fields of view V1 to V7 are trapezoidal is that the images of the patterns at both ends of the fields of view V1 to V7 are overlaid and exposed on the plate PT in order to reduce joint errors. Therefore, the same pattern is alternately formed at both ends of the pattern area PA of the masks M2 to M6.
- the images of the edge portions inside the visual fields V1 and V7 at both ends in the Y direction are portions that are not exposed to each other, the inner sides of the visual fields V1 and V7 are linear parallel to the X axis.
- FIG. 6B is a plan view showing the plate PT on the plate stage PTST.
- the exposed area EP on the plate PT is divided into seven partial exposed areas EP1 to EP7 that are elongated in the X direction so that the boundary part EP12 in the Y direction and the like overlap.
- Image fields I1 to I7 of the projection optical systems PL1 to PL7 are set on the partially exposed areas EP1 to EP7, respectively, and pattern images in the pattern areas PA of the masks M1 to M7 are joined together in the Y direction by scanning exposure. Exposed.
- a plurality of two-dimensional alignment marks 38A to 38D are formed in the vicinity of the four corners of the exposed area EP of the plate PT.
- a plurality of alignment marks may be provided for each of the partially exposed areas EP1 to EP7. In practice, a plurality of exposed areas are set on the plate PT.
- the interval in the X direction is Lm.
- a straight line parallel to the Y axis connecting the centers of the image fields I1, I3, etc. in the first column and a Y axis connecting the centers of the image fields I2, I4, etc. in the second column are parallel.
- the distance in the X direction from the straight line is Lp.
- the intervals Lm and Lp are larger than the intervals Dm and Dp in FIG. 2, but the following relationship similar to the equation (1) is established between the intervals Lm and Lp.
- the pattern area PA of the odd-numbered masks M1, M3, M5, and M7 and the pattern area PA of the even-numbered masks M2, M4, and M6 are formed at the same position in the X direction, and the mask offset MO is set to 0.
- the projection images of the masks M1 to M7 can be accurately connected and exposed on the plate PT.
- an imaging lens 34 In the plate stage PTST on the bottom surface of the reference member 31, an imaging lens 34, a two-dimensional image sensor 35, and the like that receive the illumination light that has passed around the corresponding reference mark and capture an image of the reference mark, etc.
- Eight aerial image measurement systems 33A to 33H are installed.
- the imaging signal of the imaging device 35 is supplied to an alignment control unit in the main control system 57.
- an image of the alignment mark 36A of the mask M1 by the projection optical system PL1 is formed on the reference member 31, and the image of the alignment mark 36A and the image of the reference mark 32A are overlapped to obtain the image sensor of the aerial image measurement system 33A. 35 is formed.
- the alignment control unit processes the imaging signal to determine the amount of positional deviation in the X and Y directions of the image of the alignment mark 36A (or other alignment mark) with respect to the reference mark 32A. Similarly, the amount of misalignment in the X direction and Y direction of the image of the alignment mark with respect to the reference mark 32B etc. is obtained from the imaging signals of the other aerial image measurement systems 33B to 33H in FIG.
- FIG. 5 shows a state where the mask stage MST is moved to the + X direction ends of the guide members 59A and 59B.
- a mask library 62 is installed in the vicinity of the end portion, and small masks M8 to M14 and the like similar to the mask M1 are stored in the mask library 62.
- a mask loader system 61 is disposed between the mask library 62 and the end portions of the guide members 59A and 59B.
- the mask loader system 61 moves three-dimensionally by adsorbing and holding the mask M1 and the like at the guide member 61a parallel to the Y axis, the multi-joint portion 61b moving along the guide member 61a, and the tip of the multi-joint portion 61b. Hand portion 61c.
- the masks M1 to M7 can be easily installed between the actuators 39A to 39C and the pressing portions 40A to 40C (inside the actuator systems AC1 to AC7). Further, the suction and pressurization operations of the air pad portions 41A to 41D are stopped.
- step 201 in FIG. 8 the mask stage MST is moved to the + X direction ends of the guide members 59A and 59B, and the masks M1 to M1 are sequentially transferred from the mask library 62 by the mask loader system 61.
- M7 is transferred to the inside of the actuator systems AC1 to AC7 on the mask stage MST.
- rough alignment may be performed by detecting the alignment marks 36A and 36B (or 37A and 37B) on the masks M1 to M7 by a pre-alignment system (not shown).
- step 202 the masks M1 to M7 are placed in parallel on the mask stage MST.
- the mask stage MST is moved in the -X direction, and the visual fields V1, V3, V5 are placed on the alignment marks 36A, 36B of the odd-numbered masks M1, M3, M5, M7 in FIG. V7 (illumination area) is set, and illumination light is emitted from the partial illumination optical systems IL1 to IL7. Further, the plate stage PTST is driven to move the four pairs of reference marks 32A and 32B of the reference member 31 of FIG. 1 into the odd-numbered image fields I1, I3, I5 and I7 of FIG.
- the amount of positional deviation in the X and Y directions between the four pairs of reference marks 32A and 32B and the images of the alignment marks 36A and 36B of the masks M1, M3, M5 and M7 is measured by the aerial image measurement systems 33A to 33H. Further, the mask stage MST is moved in the + X direction by the interval Lm, and the visual fields V2, V4, V6 are set on the alignment marks 36A, 36B of the even-numbered masks M2, M4, M6, and the plate stage PTST is set by the interval Lp. Moving in the + X direction, the six reference marks inside the reference member 31 are moved into the even-numbered image fields I2, I4, and I6.
- the aerial image measurement systems 33B to 33G use the six reference marks (three pairs of reference marks 32B and 32A) and the images of the alignment marks 36A and 36B of the masks M2, M4 and M6 in the X and Y directions. Measure the amount of displacement.
- the reference of the alignment marks 37A and 37B in the + X direction of the masks M1 to M7 is similarly used.
- the amount of displacement with respect to the marks 32A and 32B is measured.
- These positional deviation amounts are obtained by an alignment control unit in the main control system 57. Further, in the alignment control unit, the positional relationship between the masks M1 to M7 in FIG. 6A based on the positional deviation information, for example, the positions of the other masks M2 to M7 in the X and Y directions with reference to the mask M1.
- Each shift amount corresponds to a relative arrangement error between the masks M1 to M7.
- the alignment controller also obtains information on the positional relationship between the positions of the reference marks 32A and 32B at the ends in the + Y direction and the images of the alignment marks 36A and 36B, etc., on the mask M1.
- the alignment control unit supplies information on the positional deviation amount ( ⁇ Xi, ⁇ Yi) and the rotational angle deviation amount ⁇ i to the actuator drive system 58.
- the actuator drive system 58 drives the actuator systems AC2 to AC7 so as to cancel out the positional deviation amounts ( ⁇ Xi, ⁇ Yi) and the rotational angle deviation amount ⁇ i.
- the patterns in the pattern area PA of the masks M1 to M7 are set in the same positional relationship as when the patterns of the masks M1 to M7 are formed on one large mask. Therefore, even when a plurality of small masks M1 to M7 are used, it is possible to suppress the occurrence of joint errors when the patterns of the masks M1 to M7 are transferred onto the plate PT. Can be transferred with high accuracy.
- the scaling in the Y direction is performed by the projection optical system. Correction can be performed by a magnification correction mechanism in PL1 to PL7. Further, the scaling in the X direction can be corrected by increasing or decreasing the scanning speed of the mask stage MST with respect to the plate stage PTST with respect to the initial target value during scanning exposure described later. Further, as shown in FIG.
- the pattern of the mask M1 is virtually transformed to the pattern of the mask M1 ′.
- the mask M1 may be gradually shifted in the Y direction. The same applies to the other masks M2 to M7.
- the plate PT is loaded on the plate stage PTST.
- a photoresist is applied to the plate PT in advance by a coater / developer (not shown).
- the alignment system 54 is used to detect the positions of the alignment marks 38A to 38D on the plate PT, and the reference marks 32A, 32B, etc. are detected by the alignment control unit in the main control system 57 based on the detection result. The positional relationship of the exposed area EP of the plate PT with respect to is determined.
- the main control system 57 uses the alignment result of the masks M1 to M7 in step 203 and the alignment result of the plate PT, and the position of the plate stage PTST (plate PT) in the scanning direction (X
- target positions (including rotation angles) of the masks M1 to M7 on the mask stage MST are calculated.
- the mask side laser interferometers 56X1, 56X2, 56Y and the plate side laser interferometers 51X1, 51X2, 51Y1 to 51Y3 are used to calculate the mask.
- the amount of deviation from each target position of M1 to M7 (the amount of positional deviation and rotational error between the pattern image of the masks M1 to M7 and the plate PT (exposed area EP)) is obtained as a synchronization error.
- the mask stage MST is driven, the masks M1 to M7 are moved, for example, in front of the visual fields V1 to V7 in FIG. 6A, the plate stage PTST is driven, and the mask stage MST in FIG.
- the exposed area EP of the plate PT is moved before the image fields I1 to I7, and the mask stage MST and / or the plate stage PTST are driven in such a positional relationship that the synchronization error becomes zero.
- scanning exposure of the plate PT is performed by driving the mask stage MST and the plate stage PTST synchronously so that the positional relationship is maintained in consideration of the projection magnification ⁇ of the projection optical systems PL1 to PL7.
- the plate stage PTST (plate PT) is moved at the speed VM ⁇ in the + X direction indicated by the mark SP1 in synchronization with the movement of the mask stage MST in the + X direction indicated by the arrow SM1 at the speed VM ⁇ . Move with
- the mask-side laser interferometers 56X1, 56X2, and 56Y and the plate-side laser interferometers 51X1, 51X2, and 51Y1 to 51Y3 form the masks M1 to M7.
- Measurement of the positional deviation amount between the image and the plate PT and the synchronization error, which is a rotation error, are continuously performed.
- the actuator systems AC1 to AC7 in FIG. 6A are driven so as to correct the error, and the X of the masks M1 to M7 with respect to the mask stage MST is driven.
- the direction, the position in the Y direction, and the rotation angle in the ⁇ z direction are individually corrected dynamically.
- FIGS. 7A and 7B show the plate PT and the mask stage MST during scanning exposure, respectively.
- the rotation error with respect to the target rotation angle of the plate PT is defined as ⁇ (rad)
- the image field I1 from a straight line passing through the center of the exposed area EP and parallel to the X axis.
- P1y be the distance in the Y direction to the center of.
- the position of the image field I1 is shifted in the X direction by ⁇ ⁇ P1y from the original position.
- the main control system 57 sets in advance the rotation angle with respect to the mask stage MST (the target rotation angle corresponding to the X coordinate of the plate stage PTST) with respect to the mask M1, as shown in FIG. 7B. Keep it. Further, the distance from the center of the mask M1 in the X direction to the center of the visual field V1 is Ma (x), and the amount of movement of the mask M1 relative to the mask stage MST in the X direction and Y direction ( ⁇ XM1, ⁇ YM1) (X direction, Y direction) The target position) is approximately set as follows.
- ⁇ XM1 ⁇ ⁇ P1y /
- (3) ⁇ YM1 ⁇ ⁇ Ma (x) (4) Similarly, the target positions are set (corrected) for the other masks M2 to M7. As a result, the synchronization error during scanning exposure can be corrected at a high tracking speed.
- the rotation angle of the masks M1 to M7 may be ⁇ .
- the mask stage MST is moved by the arrow SM2 in FIG. 6A, for example. Scanning exposure is performed by moving the plate PT in synchronization with the ⁇ X direction indicated by the arrow SP2 in FIG. 6B.
- the plate PT is unloaded. The unloaded plate PT is developed by a coater / developer (not shown). This exposure and development process is a part of a pattern formation process in step S401 and a color filter formation process in step S402, which will be described later.
- step 209 the operation shifts to step 204, and the exposure operations in steps 204 to 208 are repeated. If there is no plate to be exposed in step 209, the process proceeds to step 210 as an example, and the suction and pressurization operations of the air pads 41A to 41D with respect to the masks M1 to M7 of the mask stage MST are canceled, and the actuator system AC1 The spheres 40e of the pressing parts 40A to 40C of AC7 are retracted to the main body part 40a side. As a result, the masks M1 to M7 can be easily taken out from the mask stage MST.
- the mask stage MST is moved to the ends of the guide members 59A and 59B in FIG. 5, and then the masks M1 to M7 on the mask stage MST are sequentially unloaded by the mask loader system 61 to the mask library 62. Store and finish the exposure.
- the pattern to be transferred is divided into the masks M1 to M7, and the pattern images of the masks M1 to M7 are formed through the projection optical systems PL1 to PL7 having the magnification. Since the exposure is performed on the PT, the device pattern having a large area can be exposed on the plate PT with high throughput and high accuracy without increasing the size of the projection optical system.
- step 202 for supporting a plurality of masks M1 to M7 on the mask stage MST and masks by moving the masks M1 to M7 individually relative to the mask stage MST.
- the plate PT placed on the plate stage PTST is passed through the step 203 for controlling the relative positions and rotation angles of M1 to M7 and the patterns of the masks M1 to M7 whose relative positions and rotation angles are controlled.
- Exposure steps 206 and 207 Exposure steps 206 and 207.
- the projection exposure apparatus EX also moves the masks M1 to M7 by individually moving the mask stage MST for supporting the masks M1 to M7, the plate stage PTST on which the plate PT is placed, and the masks M1 to M7 with respect to the mask stage MST.
- Illumination light is irradiated to the plate PT through a control mechanism including a main control system 57 for controlling the relative position and rotation angle of M7, and patterns of masks M1 to M7 whose relative positions and rotation angles are controlled.
- an illuminating device IU is an illuminating device IU.
- the masks M1 to M7 are reduced in size by dividing the pattern for generating a device pattern to be exposed in each exposed region on the plate PT and forming the pattern on the masks M1 to M7. it can. Therefore, for example, the masks M1 to M7 can be individually manufactured at low cost and with high accuracy using a small electron beam drawing apparatus. Further, in step 203, for example, by correcting the relative positions and rotation angles of the masks M2 to M7 with reference to the mask M1, the relative position errors and rotation errors (relative to the patterns of the masks M1 to M7) are corrected.
- step 207 the mask M1 is used to reduce the relative position error and rotation error (synchronization error) between the pattern formed in the previous process in the exposed region on the plate PT and the patterns of the masks M1 to M7.
- Driving the M7 improves the overlay accuracy. For example, when the pre-alignment accuracy is high, step 203 may be omitted, and when the synchronization error during scanning exposure can be corrected only by the operations of the mask stage MST and the plate stage PTST, step 207 is omitted. It is possible.
- the projection optical apparatus PL of FIG. 1 is composed of only one row of projection optical systems PL1, PL3, PL5, and PL7, and an image of the pattern of odd-numbered masks M1, M3, M5, and M7 in the first scanning exposure. Can be exposed on the plate PT, and images of the patterns of the even-numbered masks M2, M4, and M6 can be stitched together in the Y direction in the second scanning exposure in the Y direction.
- the odd-numbered mask is the control target (the drive target by the actuator systems AC1 to AC7) in the first scanning exposure
- the even-numbered mask is the control target in the second scanning exposure.
- the position and rotation angle of the first mask M1 may be corrected by the mask stage MST itself, and the positions and rotation angles of the other masks M2 to M7 with respect to the mask stage MST may be corrected by the actuator systems AC2 to AC7.
- the actuator system AC1 for the mask M1 instead of the actuator system AC1 for the mask M1, a member for simply positioning the mask M1 may be provided.
- seven masks M1 to M7 are placed on the mask stage MST, but any number of two or more masks may be placed on the mask stage MST. Therefore, at least one mask to be controlled is sufficient.
- the positions of the masks M1 to M7 in the X and Y directions and the rotation angle in the ⁇ z direction are controlled. However, at least one of the position and the rotation angle may be controlled. Thereby, the relative error and / or overlay error of the patterns of the masks M1 to M7 can be improved.
- the aerial image measurement systems 33A to 33H measure the positional relationship of the alignment marks 36A and 36B of the masks M1 to M7 with reference to the reference marks 32A and 32B, and the mask M1 is determined from the measurement results.
- step 203 the positions of the alignment marks 36A, 36B, etc. of the masks M1 to M7 measured (acquired) in advance by, for example, a pre-alignment system (not shown) without performing measurement by the aerial image measurement systems 33A to 33H.
- the positions of the masks M1 to M7 may be corrected based on the relationship.
- piezo motors are used as the actuators 39A to 39C of the actuator systems AC1 to AC7.
- a direct acting ultrasonic motor or a voice coil motor can be used in addition to the piezo motor.
- step 207 the mask-side laser interferometers 56X1, 56X2, etc. and the plate-side laser interferometers 51X1, 51X2, etc. And calculating the relative position and rotation angle error (which may be at least one of the above), and the position and rotation angle (which may be at least one) of the masks M1 to M7 by the actuator systems AC1 to AC7 based on the measurement results. Each of which is controlled individually.
- the pattern images of the masks M1 to M7 can be exposed on the exposed area EP of the plate PT with high overlay accuracy.
- the masks M1 to M7 are directly driven by the actuators 39A to 39C of the actuator systems AC1 to AC7, so that the mask is placed on the mask stage MST, for example.
- a sufficient space for arranging the actuator systems AC1 to AC7 on the mask stage MST can be secured.
- a metal spacer 48 for example, a metallic spacer 48 (
- a buffer member may be provided by adhesion or the like. This eliminates the possibility that the side surfaces of the masks M1 to M7 are damaged when the masks M1 to M7 are driven.
- the mask stage MST (masks M1 to M7) and the plate stage PTST (plate PT) are moved in synchronization with the X direction while the projection optical systems PL1 to PL7 of the patterns of the masks M1 to M7 are moved.
- the plate PT is scanned and exposed with an image of PL7. Accordingly, the pattern of the masks M1 to M7 can be efficiently transferred to each exposed area EP on the plate PT by one scanning exposure.
- the mask stage MST and the plate PT are moved stepwise in the Y direction.
- exposure may be performed on the plate PT by the step-and-repeat method while sequentially joining the pattern images of the masks M2 to M7.
- FIGS. 10 (A), FIG. 10 (B), FIG. 11 (A), and FIG. 11 (B) correspond to FIG. 3 (A), FIG. 3 (B), and FIGS. 4 (A) to 4 (D).
- the same reference numerals are given to the parts to be described, and detailed description thereof will be omitted.
- FIG. 10A shows a state where the masks M1 to M7 are placed on the carrier 45
- FIG. 10B shows a state where the carrier 45 is placed on the mask stage MST.
- actuator systems AC1 to AC7 including actuators 39A to 39C and pressing portions 40A to 40C are installed around the masks M1 to M7 on the carrier 45, respectively.
- the carrier 45 is provided with a connector 46 for supplying electric power for driving the actuators 39A to 39C and the pressing portions 40A to 40C.
- the masks M1 to M7 are placed in parallel on the carrier 45 on the mask stage MST by a mask loader system (not shown). 10B, the connector 46 of the carrier 45 on the mask stage MST is connected to an actuator drive system 58 via a flexible cable 70, and the actuator drive system 58 is the same as the example of FIG. 4A.
- the masks M1 to M7 are driven with respect to the mask stage MST via the actuator systems AC1 to AC7.
- FIG. 11A is a plan view showing the mask stage MST of FIG. 10B
- FIG. 11B is an enlarged cross-sectional view taken along line XIB-XIB of FIG. 11A.
- an opening 22 is formed in the carrier 45 so as to cover the pattern area PA of the masks M1 to M7
- an opening 21 is formed in the mask stage MST so as to cover the opening 22.
- a vacuum preload type gas bearing is formed around the opening 22 of the carrier 45 in correspondence with the air pad portions 41A to 41D (used in this embodiment for adsorption) on the mask stage MST in FIG.
- Four air pad portions 41E to 41H are formed.
- the carrier 45 is sucked and held by the air pad portion 41D of the mask stage MST by suction from the exhaust hole 42E communicating with the vent hole 42B in the mask stage MST.
- the air pad portion 41H of the carrier 45 is formed with an exhaust hole 42A1 and an air supply hole 42C1 so as to be connected to the exhaust hole 42A and the air supply hole 42C in the air pad portion 41D, respectively.
- the other configuration is the same as that in FIG. 4A, and the mask M1 is lifted and held with the gap g from the air pad portion 41H by suction and pressurization from the air pad portion 41H. Accordingly, the masks M1 to M7 can be smoothly driven in the X direction, the Y direction, and the ⁇ z direction with respect to the carrier 45 (mask stage MST) by the actuator systems AC1 to AC7.
- Effects and the like of this embodiment are as follows. (1) In this embodiment, when the masks M1 to M7 are used for the first time, the masks M1 to M7 are placed in the actuator systems AC1 to AC7 on the carrier 45 on the mask stage MST as shown in FIG. Then, suction and pressurization of the air pads 41E to 41H are started. Thereafter, corresponding to step 203 in FIG. 8, the amount of positional deviation between the reference marks 32A, 32B, etc. on the plate stage PTST and the images of the alignment marks 36A, 36B, etc. of the masks M1 to M7 is measured. The relative position and relative angle errors (or at least one of them) of the other masks M2 to M7 are measured using (as a result, the carrier 45 or the mask stage MST) as a reference.
- the pattern of the masks M1 to M7 is changed to one large pattern. It can be set to a positional relationship equivalent to the case where it is formed on the mask. Therefore, a desired large device pattern can be exposed on the plate PT with high accuracy.
- step 207 an image of the pattern of the masks M1 to M7 (mask stage MST) measured via the laser interferometer and the exposed area EP (plate stage PTST) of the plate PT.
- the actuator systems AC1 to AC7 By driving the actuator systems AC1 to AC7 on the carrier 45 so as to correct the positional deviation amount, the overlay error can be reduced.
- the masks M1 to M7 are placed on the carrier 45, and the mask stage MST and the mask library (not shown) are connected by the mask loader system (not shown). Are stored in the mask library while being placed on the carrier 45.
- the masks M1 to M7 are used after the second time, the masks M1 to M7 are placed on the mask stage MST by the mask loader system while being placed on the carrier 45.
- the actuators 39A to 39C of the actuator systems AC1 to AC7 a piezo motor (or an ultrasonic motor, a small electric micrometer, or the like) that keeps the operation position almost constant in a state where power is not supplied is used. Therefore, the relative positions of the masks M1 to M7 placed in parallel on the carrier 45 are maintained in a substantially constant relationship while returning from the mask stage MST to the mask stage MST through the mask library. Accordingly, in a state where the carrier 45 on which the masks M1 to M7 are placed is placed on the mask stage MST after the second time, the relative positions of the masks M1 to M7 are set at the time of the previous exposure (almost).
- the mask alignment operation corresponding to step 203 can be executed in a very short time, or the operation corresponding to step 203 can be omitted to perform exposure. You can save time. Further, since the masks M1 to M7 can be transported collectively using the carrier 45, the transport time of the masks M1 to M7 corresponding to step 201 can be shortened.
- step corresponding to step 203 at least one of the relative position and the relative angle between the carrier 45 and the mask stage MST is measured, and the mask stage MST of the carrier 45 is based on the measurement result. You may make it change at least one of the position and rotation angle with respect to. This can be performed using, for example, an image processing type pre-alignment system (not shown) provided on the mask stage MST and a mask loader system.
- FIGS. 12A, FIG. 12B, and FIG. 13 the parts corresponding to those in FIG. 10A, FIG. 10B, FIG. 11A, and FIG. A detailed description thereof will be omitted.
- FIG. 12A shows a state where the masks M1 to M7 are placed on the carrier 45
- FIG. 12B shows the mask M1 shown in FIG.
- the actuator system ACS1 for the mask M1 in FIG. 12A includes a manual triaxial actuator 39SA to 39SC that drives the mask M1 and a pressing portion 40SA that presses the mask M1 against them as shown in FIG. 12B.
- the actuator 39SAB is a manual micrometer as shown in FIG. 12D
- the pressing portion 40SB is a coil spring type plunger as shown in FIG. 12C.
- the other actuator systems ACS2 to ACS7 are similarly configured.
- FIG. 13 shows a pre-alignment apparatus arranged between a mask library (not shown) and the mask stage MST in FIG. 10B in this embodiment.
- an orthogonal coordinate system composed of an X axis, a Y axis, and a Z axis is set.
- the pre-alignment apparatus includes X-axis movable mirrors 64X1 and 64X2 and a Y-axis movable mirror 64Y1, and moves in the X direction along a guide member (not shown) and a base member (not shown).
- An imaging device 66 that includes a Y-axis guide 65 laid in parallel to the Y-axis (axis orthogonal to the X-axis) via a frame, and a Y-axis moving mirror 64Y2, and moves in the Y direction along the Y-axis guide 65.
- a four-axis laser interferometer (not shown) that measures the positions of the movable mirrors 64X1 and 64X2 in the X direction and the positions of the movable mirrors 64Y1 and 64Y2 in the Y direction, and a process for processing the imaging signal of the imaging device 66 Device (not shown).
- the carrier 45 is sucked and held on the X stage 63.
- the masks M1 to M7 are placed in the actuator systems ACS1 to ACS7 on the carrier 45 by the mask loader system.
- the carrier 45 is placed on the X stage 63 and sucked and held, and then the masks M1 to M7 are pre-aligned. That is, the operation of driving the X stage 63 in the X direction and the operation of driving the imaging device 66 in the Y direction along the Y-axis guide 65 are combined, and the alignment marks 36A and 36B of the masks M1 to M7 are combined by the imaging device 66. (And / or 37A, 37B) coordinates are measured.
- the positional deviation amounts of the other masks M2 to M7 in the X direction and the Y direction and the rotation angle around the Z axis may be obtained.
- the drive amounts of the actuators 39SA to 39SC (micrometers) of the actuator systems ACS2 to ACS7 of FIG. 12A for canceling out the displacement and the rotation angle are obtained.
- the operator can manually operate the actuators 39SA to 39SC by the determined drive amount, thereby correcting the relative positional deviation amount and the rotation angle error of the masks M1 to M7.
- the carrier 45 thus pre-aligned is transported onto the mask stage MST in FIG. 10B by a mask loader system (not shown).
- the masks M1 to M7 on the carrier 45 have been pre-aligned and can be handled as one large mask on which the patterns of the masks M1 to M7 are formed. Therefore, on the mask stage MST, for example, the final alignment (fine fineness) of the masks M1 to M7 is detected only by detecting the amount of misalignment between the alignment mark images of the masks M1 and M7 at both ends and the corresponding reference marks on the plate stage. Alignment) can be performed quickly.
- the actuator systems ACS1 to ACS7 are driven by a manual method, the operation of individually driving the masks M1 to M7 is not executed during exposure. For this reason, the masks M1 to M7 can be held on the carrier 45 only by vacuum suction, and it is not necessary to apply pressure. After the exposure, the masks M1 to M7 are transported to the mask library and stored in a state of being placed on the carrier 45. Thereafter, when the masks M1 to M7 are used, since the pre-alignment is completed, the carrier 45 on which the masks M1 to M7 are placed only needs to be transferred onto the mask stage MST as it is. Accordingly, the masks M1 to M7 can be quickly aligned.
- FIGS. 15A and 15B portions corresponding to FIGS. 4A and 4D are denoted by the same reference numerals, and detailed description thereof is omitted.
- FIG. 14A is a plan view showing the carrier 47A of the present embodiment
- FIG. 14B is a plan view showing a state in which the masks M1 to M7 are placed on the carrier 47A
- FIG. 14C is a mask loader system.
- FIG. 6 is a perspective view showing a state where a carrier 47A is being transported by 61;
- the rectangular flat carrier 47A allows the illumination light that has passed through the masks M1 to M7 to pass, and as shown by the position B2, the mask M1 is formed at the four corners and at the center of the opposing long sides.
- Seven rectangular openings 23 capable of holding .about.M7 are provided.
- the opening 23 is provided with notches 23a to 23f so that the actuator systems AC1 to AC7 and the air pad portions 41A to 41D on the mask stage MST can pass through.
- the mask library 62 stores a plurality of carriers 47B to 47D each having seven masks MB1 to MB7, MC1 to MC7, and MD1 to MD7 each having the same shape as the carrier 47A. Has been.
- the mask library 62 also has a space for storing the carrier 47A.
- the mask loader system 61 includes a hand portion 61d for carrying the carriers 47A to 47D.
- the masks M1 to M7 are initially placed on the carrier 47A by, for example, a mask loader system (not shown) that individually transports the masks. Thereafter, the masks M1 to M7 are stored in the mask library 62 while being placed on the carrier 47A. When the masks M1 to M7 are used for exposure, the carrier 47A on which the masks M1 to M7 are placed is transported from the mask library 62 onto the mask stage MST by the mask loader system 61.
- FIG. 15A is a plan view showing the mask stage MST on which the carrier 47A is conveyed
- FIG. 15B is a cross-sectional view taken along the line XVB-XVB in FIG. 15A.
- the masks M1 to M7 are separated from the carrier 47A, they can be individually driven by the actuator systems AC1 to AC7 on the mask stage MST as in the first embodiment.
- the masks M1 to M7 are placed on the carrier 47A by raising the carrier 47A in the Z direction by the mask loader system from the state of FIG. Thereafter, the masks M1 to M7 are stored in the mask library while being placed on the carrier 47A.
- a liquid crystal device such as a liquid crystal display element is formed by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a substrate (glass plate) using the projection exposure apparatus (scanning exposure apparatus) of the embodiment described above. Can be manufactured.
- a predetermined pattern circuit pattern, electrode pattern, etc.
- a substrate glass plate
- the projection exposure apparatus scanning exposure apparatus
- an example of this manufacturing method will be described with reference to steps S401 to S404 in FIG.
- step S401 pattern formation process
- An exposure process for transferring and exposing the pattern onto the photosensitive substrate and a developing process for developing the photosensitive substrate are performed.
- a predetermined resist pattern is formed on the substrate by a lithography process including the coating process, the exposure process, and the development process. Following this lithography process, a predetermined pattern including a large number of electrodes and the like is formed on the substrate through an etching process using the resist pattern as a processing mask, a resist stripping process, and the like. The lithography process or the like is executed a plurality of times according to the number of layers on the substrate.
- next step S402 color filter forming step
- a large number of three fine filter sets corresponding to red R, green G, and blue B are arranged in a matrix, or red R, green G, and blue B are arranged.
- a color filter is formed by arranging a set of three stripe-shaped filters in the horizontal scanning line direction.
- next step S403 cell assembly process
- liquid crystal is injected between the substrate having the predetermined pattern obtained in step S401 and the color filter obtained in step S402, and a liquid crystal panel (liquid crystal cell) is obtained. ).
- step S404 module assembly process
- the liquid crystal panel (liquid crystal cell) thus assembled is attached with an electric circuit for performing a display operation and components such as a backlight to complete a liquid crystal display element.
- the present invention is not limited to application to a manufacturing process of a liquid crystal display element.
- a manufacturing process of a display device such as a plasma display, an imaging element (CCD or the like), a micromachine, a MEMS (Microelectromechanical systems: It can be widely applied to manufacturing processes of various devices such as micro electromechanical systems), thin film magnetic heads using ceramic wafers or the like as substrates, and semiconductor elements.
- a discharge lamp is provided as a light source, and necessary light such as g-line, h-line, and i-line is selected.
- the exposure light uses light from an ultraviolet LED, laser light from a KrF excimer laser (248 nm) or ArF excimer laser (193 nm), or harmonics of a solid-state laser (semiconductor laser or the like). Even if it exists, it is possible to apply this invention.
- the present invention can also be applied to an exposure apparatus that performs Mitty exposure.
- the masks M1 to M7 on which the pattern is formed are described as using the transmission type mask that transmits the exposure light.
- a reflection type mask that reflects the exposure light can also be used.
- the reflective mask for example, a DMD (Digital Micromirror Device or Deformable Micromirror Device) in which a pattern is formed by a plurality of minute mirror elements can be used.
- the plate PT such as a glass plate is used as an object to which the pattern of the masks M1 to M7 is transferred (an object to be exposed through the pattern).
- a solid plate such as a glass plate
- a flexible film-like or sheet-like object can be used.
- the projection exposure apparatus EX (exposure apparatus) of the above-described embodiment has various mechanical systems including components (MST, PTST) recited in the claims of the present application, with predetermined mechanical accuracy, electrical Manufactured by assembling so as to maintain optical accuracy and optical accuracy.
- the assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus.
- the exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
Abstract
Description
また、本発明による露光装置は、パターンが形成された複数のマスクを支持する第1ステージと、物体が載置される第2ステージと、前記複数のマスクのうち少なくとも1つの制御対象マスクを前記第1ステージに対して個別に動かして該複数のマスクの相対配置を制御する制御装置と、前記相対配置が制御された前記複数のマスクの前記パターンを介し
て前記物体に露光光を照射する照明系と、を備えるものである。 An exposure method according to the present invention includes a supporting step for supporting a plurality of masks on which a pattern is formed on a first stage, and moving at least one control target mask among the plurality of masks individually with respect to the first stage. A control step for controlling the relative arrangement of the plurality of masks, and an exposure step for exposing the object placed on the second stage through the pattern of the plurality of masks for which the relative arrangement is controlled. It is a waste.
The exposure apparatus according to the present invention includes a first stage that supports a plurality of masks on which a pattern is formed, a second stage on which an object is placed, and at least one control target mask among the plurality of masks. A control device that individually moves the first stage to control the relative arrangement of the plurality of masks, and illumination that irradiates the object with exposure light through the patterns of the plurality of masks in which the relative arrangement is controlled. And a system.
以下、本発明の好ましい第1の実施形態につき図1~図8を参照して説明する。
図1は、本実施形態のステップ・アンド・スキャン方式の投影露光装置(走査型露光装置)EXの概略構成を示す。図1において、投影露光装置EXは、露光光源(不図示)からの光で、複数(図1では7個)の小型のマスクM1,M2,M3,M4,M5,M6,M7に形成されたパターンを照明する照明装置IUと、マスクM1~M7を保持して移動するマスクステージMSTと、マスクM1~M7のパターンの拡大像をそれぞれプレートPT上に投影する複数の反射屈折型の投影光学系PL1~PL7を含む投影光学装置PLと、プレートPTを保持して移動するプレートステージPTST(図2参照)と、マスクステージMST及びプレートステージPTSTを駆動するリニアモータ等を含む駆動機構(不図示)と、この駆動機構等の動作を統括的に制御するコンピュータよりなる主制御系57とを備えている。なお、本実施形態のプレートPTは、一例としてフォトレジスト(感光材料)が塗布された1.9×2.2m角、2.2×2.4m角、2.4×2.8m角、又は2.8×3.2m角等の矩形の平板状の液晶表示素子製造用のガラスプレートである。 [First Embodiment]
A preferred first embodiment of the present invention will be described below with reference to FIGS.
FIG. 1 shows a schematic configuration of a step-and-scan projection exposure apparatus (scanning exposure apparatus) EX of the present embodiment. In FIG. 1, the projection exposure apparatus EX is formed on a plurality of (seven in FIG. 1) small masks M1, M2, M3, M4, M5, M6, and M7 with light from an exposure light source (not shown). Illumination device IU that illuminates a pattern, mask stage MST that moves while holding masks M1 to M7, and a plurality of catadioptric projection optical systems that project magnified images of the patterns of masks M1 to M7 on plate PT, respectively Projection optical apparatus PL including PL1 to PL7, a plate stage PTST (see FIG. 2) that holds and moves the plate PT, a drive mechanism (not shown) including a mask stage MST, a linear motor that drives the plate stage PTST, and the like. And a
また、図4(A)において、アクチュエータ系AC1は、マスクM1をX方向に駆動するアクチュエータ39Aと、X方向に離れた2箇所でマスクM1をY方向に駆動する2つのアクチュエータ39B,39Cと、アクチュエータ39A及び39B,39Cに対向してそれぞれマスクM1をX方向及びY方向に付勢する押圧部40A及び40B,40Cとを備えている。Y軸のアクチュエータ39B,39Cの駆動量を変えることでマスクM1のθz方向の回転角を制御できる。アクチュエータ39B,39Cはアクチュエータ39Aを90°回転して配置したものであり、押圧部40B,40Cは押圧部40Aを90°回転して配置したものである。マスクM1の着脱時に、アクチュエータ系AC1の各先端部とマスクM1との間に或る程度の隙間を確保できるように、押圧部40A~40Cの先端部を随時逆方向に退避できるように構成されている。 In the example of FIG. 4D, the
4A, the actuator system AC1 includes an
図4(B)において、押圧部40Bは、マスクステージMSTに固定される本体部40aと、本体部40aに対して挿脱自在に支持された磁性材料からなる移動部材40cと、移動部材40cを外側に付勢するコイルばね40dと、移動部材40cの先端部に回転可能に設けられてマスクM1に直接接触する金属製の球体40eとを含んでいる。さらに、本体部40a内に組み込まれたコイル40bにアクチュエータ駆動系58から通電することによって、移動部材40c(球体40e)を本体部40a側の位置B1に退避できるように構成されている。なお、押圧部40Bとしては、板ばね部材等も使用可能である。 A configuration example of the actuator 39B and the
4B, the
図1に戻り、プレートPTはプレートホルダ(不図示)を介してプレートステージPTST(図2参照)上に吸着保持され、プレートステージPTSTにはX軸の移動鏡50X及びY軸の移動鏡50Yが設けられている。X軸のレーザ干渉計51X1,51X2及びY軸のレーザ干渉計51Y1,51Y2,51Y3から移動鏡50X及び50Yに計測用ビームが照射されている。レーザ干渉計51X1,51X2及び51Y1~51Y3によって、例えば投影光学装置PLを支持する不図示のコラムに設けられた参照鏡(不図示)を基準として、プレートステージPTSTのX方向、Y方向の位置、及びθz方向の回転角が計測されている。その計測情報に基づいて主制御系57内のステージ制御部が、駆動機構(不図示)を介してプレートステージPTST(プレートPT)のX方向、Y方向の位置及び速度、並びにθz方向の回転角を制御する。 4A, in the vicinity of the pattern area PA of the masks M1 to M7 in the X direction (scanning direction), the mutual positional relationship and the device pattern formed on the plate PT (from the second layer onward) Two pairs of two-dimensional alignment marks 36A and 36B and 37A and 37B for measuring the positional relationship with the exposure) are formed.
Returning to FIG. 1, the plate PT is sucked and held on a plate stage PTST (see FIG. 2) via a plate holder (not shown), and an X-axis
以下、部分照明光学系IL1~IL7及び投影光学系PL1~PL7の構成につき詳細に説明する。投影光学系PL1~PL7は、それぞれマスクM1~M7上における視野(ここでは照明領域に等しい)内の拡大像である一次像をプレートPT上の像野内に形成する反射屈折型の投影光学系であり、その走査方向(X方向)における拡大倍率が+1倍を超え、且つ非走査方向(Y方向)における拡大倍率は-1を下回る。言い換えると、投影光学系PL1~PL7は、それぞれマスクM1~M7のパターンの走査方向に正立で、かつ非走査方向に倒立の拡大像をプレートPT上に形成する。走査方向及び非走査方向の拡大倍率の絶対値は、一例として2.5程度である。 Between the first and second rows of projection optical systems, the auto focus system 52 for aligning the focus positions (Z-direction positions) of the masks M1 to M7 and the plate PT and the plate PT are aligned. The off-
Hereinafter, the configurations of the partial illumination optical systems IL1 to IL7 and the projection optical systems PL1 to PL7 will be described in detail. The projection optical systems PL1 to PL7 are catadioptric projection optical systems that form a primary image, which is an enlarged image in the field of view (here, equal to the illumination area) on the masks M1 to M7, in the image field on the plate PT. Yes, the magnification in the scanning direction (X direction) exceeds +1 times, and the magnification in the non-scanning direction (Y direction) is less than -1. In other words, the projection optical systems PL1 to PL7 form enlarged images on the plate PT that are upright in the scanning direction of the patterns of the masks M1 to M7 and inverted in the non-scanning direction, respectively. As an example, the absolute value of the magnification in the scanning direction and the non-scanning direction is about 2.5.
また、投影光学系PL2は、投影光学系PL1と対称に、Z軸に平行な光軸AX21に沿って配置された第1レンズ群G1c、第2レンズ群G2c、及び凹面反射鏡CCMcと、Z軸に平行な光軸AX23を持つ第3レンズ群G3cと、第2レンズ群G2cから+Z方向に向かう光束を光軸AX22に沿って+X方向に折り曲げる第1偏向部材FM1cと、その+X方向に向かう光束を-Z方向に折り曲げる第2偏向部材FM2cと、投影光学系PL2の瞳面に配置された開口絞りAScとを備えている。 In the projection optical system PL1, an aperture stop ASb for determining the numerical aperture on the plate PT side of the projection optical system PL1 is provided in the vicinity (pupil plane) of the concave reflecting mirror CCMb. Are positioned so that the mask M1 side and the plate PT side are substantially telecentric.
The projection optical system PL2 is symmetrical to the projection optical system PL1 and includes a first lens group G1c, a second lens group G2c, and a concave reflecting mirror CCMc, which are disposed along an optical axis AX21 parallel to the Z axis. A third lens group G3c having an optical axis AX23 parallel to the axis, a first deflecting member FM1c that bends the light flux from the second lens group G2c in the + Z direction along the optical axis AX22, and the + X direction. A second deflection member FM2c that bends the light beam in the −Z direction and an aperture stop ASc disposed on the pupil plane of the projection optical system PL2 are provided.
また、投影光学系PL1及びPL2は、第1レンズ群G1b及びG1cの光軸AX11,AX21のX方向(走査方向)における間隔をDmとし、第3レンズ群G3b及びG3cの光軸AX13,AX23のX方向における間隔をDpとし、投影光学系PL1及びPL2の投影倍率をβとするとき、以下の関係が満足されている。 Further, the projection optical systems PL1 and PL2 are provided with a magnification correction mechanism (not shown). The configurations and magnifications of the projection optical systems PL1 and PL2 are arbitrary, and the projection optical systems PL1 and PL2 may be configured by a refractive system, for example. Further, a projection optical system that forms an intermediate image may be used as the projection optical systems PL1 and PL2.
In the projection optical systems PL1 and PL2, the distance between the optical axes AX11 and AX21 of the first lens groups G1b and G1c in the X direction (scanning direction) is Dm, and the optical axes AX13 and AX23 of the third lens groups G3b and G3c are set. When the interval in the X direction is Dp and the projection magnification of the projection optical systems PL1 and PL2 is β, the following relationship is satisfied.
図6(A)は、図1のマスクステージMST上のマスクM1~M7の配置を示す平面図である。図6(A)に示すように、マスクM1~M7は、Y方向(非走査方向)に沿って配置されて、それぞれ図1の投影光学系PL1~PL7の台形状の視野V1~V7が位置決めされるパターン領域PAを備えている。視野V1~V7が台形状であるのは、継ぎ誤差を低減するために、視野V1~V7の両端部のパターンの像をプレートPT上に重ねて露光するためである。そのため、マスクM2~M6のパターン領域PAの両端部には交互に同じパターンが形成されている。ただし、Y方向の両端部の視野V1,V7の内側のエッジ部の像は重ねては露光されない部分であるため、視野V1,V7の内側はX軸に平行な直線状となっている。 Dp = Dm × | β | (1)
FIG. 6A is a plan view showing the arrangement of the masks M1 to M7 on the mask stage MST of FIG. As shown in FIG. 6A, the masks M1 to M7 are arranged along the Y direction (non-scanning direction), and the trapezoidal fields V1 to V7 of the projection optical systems PL1 to PL7 in FIG. The pattern area PA is provided. The reason why the fields of view V1 to V7 are trapezoidal is that the images of the patterns at both ends of the fields of view V1 to V7 are overlaid and exposed on the plate PT in order to reduce joint errors. Therefore, the same pattern is alternately formed at both ends of the pattern area PA of the masks M2 to M6. However, since the images of the edge portions inside the visual fields V1 and V7 at both ends in the Y direction are portions that are not exposed to each other, the inner sides of the visual fields V1 and V7 are linear parallel to the X axis.
図6(B)は、プレートステージPTST上のプレートPTを示す平面図である。図6(B)において、プレートPT上の被露光領域EPは、Y方向の境界部EP12等が重なるように、X方向に細長い7列の部分被露光領域EP1~EP7に分かれている。部分被露光領域EP1~EP7上にはそれぞれ投影光学系PL1~PL7の像野I1~I7が設定され、走査露光によってマスクM1~M7のパターン領域PA内のパターンの像がY方向に継ぎ合わせながら露光される。また、プレートPTの被露光領域EPの四隅の近傍には、複数の2次元のアライメントマーク38A~38Dが形成されている。なお、部分被露光領域EP1~EP7毎に複数のアライメントマークを設けてもよい。また、実際にはプレートPT上には、複数の被露光領域が設定される。 In order to define the fields V1, V2, etc. on the masks M1 to M7, as an example, an illumination field stop and a relay optical system (not shown) are arranged in the partial illumination optical systems IL11, IL2 in FIG.
FIG. 6B is a plan view showing the plate PT on the plate stage PTST. In FIG. 6B, the exposed area EP on the plate PT is divided into seven partial exposed areas EP1 to EP7 that are elongated in the X direction so that the boundary part EP12 in the Y direction and the like overlap. Image fields I1 to I7 of the projection optical systems PL1 to PL7 are set on the partially exposed areas EP1 to EP7, respectively, and pattern images in the pattern areas PA of the masks M1 to M7 are joined together in the Y direction by scanning exposure. Exposed. A plurality of two-dimensional alignment marks 38A to 38D are formed in the vicinity of the four corners of the exposed area EP of the plate PT. A plurality of alignment marks may be provided for each of the partially exposed areas EP1 to EP7. In practice, a plurality of exposed areas are set on the plate PT.
この場合、奇数番目のマスクM1,M3,M5,M7のパターン領域PAと、偶数番目のマスクM2,M4,M6のパターン領域PAとをX方向の同じ位置に形成して、マスクオフセットMOを0にしておいても、マスクM1~M7の投影像をプレートPT上で正確に繋ぎ合わせて露光できる。 Lp = Lm × | β | (2)
In this case, the pattern area PA of the odd-numbered masks M1, M3, M5, and M7 and the pattern area PA of the even-numbered masks M2, M4, and M6 are formed at the same position in the X direction, and the mask offset MO is set to 0. However, the projection images of the masks M1 to M7 can be accurately connected and exposed on the plate PT.
また、図2のプレートステージPTSTの-X方向の端部に設けられた光透過性の基準部材31のプレートPT表面と同じ高さの表面には、Y方向に所定間隔の1対の2次元の基準マーク32A,32B(図1参照)が合計で4対(8個)形成されている。基準部材31の底面のプレートステージPTST内には、対応する基準マークの周囲を通過した照明光を受光して基準マーク等の像を撮像する、それぞれ結像レンズ34と2次元の撮像素子35とを備える8個の空間像計測系33A~33Hが設置されている。撮像素子35の撮像信号は主制御系57内のアライメント制御部に供給される。 For example, when the distance Lp between the image field of the first row and the image field of the second row is reduced, the relationship of the expression (1) is not established. In this case, if the pattern areas of the odd-numbered masks M1, M3, etc. and the even-numbered masks M2, M4, etc. are shifted in the X direction by the mask offset MO (= Lm−Lp / | β |). Good.
Further, a pair of two-dimensional pairs with a predetermined interval in the Y direction is provided on the surface of the light transmitting
さらに、図5は、マスクステージMSTをガイド部材59A,59Bの+X方向の端部に移動した状態を示す。図5において、その端部近傍にマスクライブラリ62が設置され、マスクライブラリ62内にマスクM1と同様の小型のマスクM8~M14等が格納されている。また、マスクライブラリ62とガイド部材59A,59Bの端部との間に、マスクローダ系61が配置されている。マスクローダ系61は、Y軸に平行なガイド部材61aと、ガイド部材61aに沿って移動する多関節部61bと、多関節部61bの先端でマスクM1等を吸着保持して3次元的に移動するハンド部61cとを備えている。 The positional relationship between the centers of the reference marks 32A and 32B and the detection center of the
Further, FIG. 5 shows a state where the mask stage MST is moved to the + X direction ends of the
ΔYM1=θ・Ma(x) …(4)
他のマスクM2~M7についても同様に目標位置の設定(補正)を行う。これによって、走査露光中の同期誤差を高い追従速度で補正できる。なお、投影光学系PL1~PL7の投影像が正立正像である場合には、マスクM1~M7の回転角はθでよい。 ΔXM1 = −θ · P1y / | β | (3)
ΔYM1 = θ · Ma (x) (4)
Similarly, the target positions are set (corrected) for the other masks M2 to M7. As a result, the synchronization error during scanning exposure can be corrected at a high tracking speed. When the projection images of the projection optical systems PL1 to PL7 are erect images, the rotation angle of the masks M1 to M7 may be θ.
(1)本実施形態の投影露光装置EXによる露光方法は、複数のマスクM1~M7をマスクステージMST上に支持するステップ202と、マスクM1~M7をマスクステージMSTに対して個別に動かしてマスクM1~M7の相対的な位置及び回転角を制御するステップ203と、その相対的な位置及び回転角が制御されたマスクM1~M7のパターンを介し、プレートステージPTSTに載置されたプレートPTを露光するステップ206,207と、を含んでいる。
また、投影露光装置EXは、マスクM1~M7を支持するマスクステージMSTと、プレートPTが載置されるプレートステージPTSTと、マスクM1~M7をマスクステージMSTに対して個別に動かしてマスクM1~M7の相対的な位置及び回転角を制御する主制御系57を含む制御機構と、その相対的な位置及び回転角が制御されたマスクM1~M7のパターンを介してプレートPTに照明光を照射する照明装置IUと、を備えている。 Effects and the like of this embodiment are as follows.
(1) In the exposure method using the projection exposure apparatus EX of the present embodiment, step 202 for supporting a plurality of masks M1 to M7 on the mask stage MST and masks by moving the masks M1 to M7 individually relative to the mask stage MST. The plate PT placed on the plate stage PTST is passed through the
The projection exposure apparatus EX also moves the masks M1 to M7 by individually moving the mask stage MST for supporting the masks M1 to M7, the plate stage PTST on which the plate PT is placed, and the masks M1 to M7 with respect to the mask stage MST. Illumination light is irradiated to the plate PT through a control mechanism including a
なお、本実施形態ではマスクステージMST上に7個のマスクM1~M7が載置されるが、マスクステージMST上には2個以上の任意の数のマスクを載置してもよい。従って、制御対象のマスクは少なくとも一つでよい。 Further, for example, the position and rotation angle of the first mask M1 may be corrected by the mask stage MST itself, and the positions and rotation angles of the other masks M2 to M7 with respect to the mask stage MST may be corrected by the actuator systems AC2 to AC7. In this case, instead of the actuator system AC1 for the mask M1, a member for simply positioning the mask M1 may be provided.
In this embodiment, seven masks M1 to M7 are placed on the mask stage MST, but any number of two or more masks may be placed on the mask stage MST. Therefore, at least one mask to be controlled is sufficient.
(3)また、ステップ203は、空間像計測系33A~33Hによって基準マーク32A,32B等を基準としてマスクM1~M7のアライメントマーク36A,36B等の位置関係を計測し、この計測結果からマスクM1(マスクステージMST)に対するマスクM2~M7の相対的な位置及び回転角(この少なくとも一方でもよい)を求める工程と、その計測結果に基づいてアクチュエータ系AC1~AC7によってマスクM1~M7の位置及び回転角(この少なくとも一方でもよい)を変化させる工程とを含んでいる。 (2) In this embodiment, the positions of the masks M1 to M7 in the X and Y directions and the rotation angle in the θz direction are controlled. However, at least one of the position and the rotation angle may be controlled. Thereby, the relative error and / or overlay error of the patterns of the masks M1 to M7 can be improved.
(3) In
なお、ステップ203では、空間像計測系33A~33Hによる計測を行うことなく、例えばプリアライメント系(不図示)によって予め計測(取得)されているマスクM1~M7のアライメントマーク36A,36B等の位置関係等に基づいて、マスクM1~M7の位置等を補正してもよい。 Thereby, the relative position and / or rotation angle error between the patterns of the masks M1 to M7 can be corrected with high accuracy.
In
(4)また、ステップ207は、マスク側のレーザ干渉計56X1,56X2等及びプレート側のレーザ干渉計51X1,51X2等によって、プレートPT上の被露光領域EPとマスクM1~M7のパターンの像との相対的な位置及び回転角の誤差(この少なくとも一方でもよい)を求める工程と、その計測結果に基づいてアクチュエータ系AC1~AC7によってマスクM1~M7の位置及び回転角(この少なくとも一方でもよい)を個別に制御する工程とを含んでいる。 In this embodiment, piezo motors are used as the
(4) In
(5)また、本実施形態では、図4(A)に示すように、アクチュエータ系AC1~AC7のアクチュエータ39A~39CによってマスクM1~M7を直接駆動しているため、例えばマスクステージMST上にマスクM1~M7が載置される小型の複数の可動ステージを設ける場合に比べて、マスクステージMST上にアクチュエータ系AC1~AC7を配置するためのスペースを十分に確保できる。 Thus, the pattern images of the masks M1 to M7 can be exposed on the exposed area EP of the plate PT with high overlay accuracy.
(5) In this embodiment, as shown in FIG. 4A, the masks M1 to M7 are directly driven by the
本発明の第2の実施形態につき図10及び図11を参照して説明する。本実施形態の投影露光装置は図1の投影露光装置EXとほぼ同じであるが、複数のマスクM1~M7を個々にマスクステージMST上に載置するのではなく、図10(A)に示すように、マスクM1~M7を矩形の平板状のキャリア45に載置した状態でマスクステージMST上に載置する点が異なっている。図10(A)、図10(B)及び図11(A)、図11(B)において、図3(A)、図3(B)及び図4(A)~図4(D)に対応する部分には同一符号を付してその詳細な説明を省略する。 [Second Embodiment]
A second embodiment of the present invention will be described with reference to FIGS. The projection exposure apparatus of this embodiment is almost the same as the projection exposure apparatus EX of FIG. 1, but a plurality of masks M1 to M7 are not individually placed on the mask stage MST, but are shown in FIG. As described above, the difference is that the masks M1 to M7 are mounted on the mask stage MST in a state of being mounted on the rectangular
図10(B)において、マスクステージMST上のキャリア45のコネクタ46は可撓性のケーブル70を介してアクチュエータ駆動系58に連結され、アクチュエータ駆動系58は、図4(A)の例と同様にアクチュエータ系AC1~AC7を介してマスクステージMSTに対してマスクM1~M7を駆動する。 When the masks M1 to M7 are exposed for the first time, they are placed in parallel on the
10B, the
(1)本実施形態において、マスクM1~M7を初めて使用する際には、図11(A)に示すようにマスクM1~M7をマスクステージMST上のキャリア45上のアクチュエータ系AC1~AC7内に載置して、エアパッド部41E~41Hの吸引及び加圧を開始する。その後、図8のステップ203に対応して、プレートステージPTST上の基準マーク32A,32B等と、マスクM1~M7のアライメントマーク36A,36B等の像との位置ずれ量を計測し、例えばマスクM1(ひいてはキャリア45又はマスクステージMST)を基準として、他のマスクM2~M7の相対位置及び相対角度の誤差(又はこれらの少なくとも一方)を計測する。 Effects and the like of this embodiment are as follows.
(1) In this embodiment, when the masks M1 to M7 are used for the first time, the masks M1 to M7 are placed in the actuator systems AC1 to AC7 on the
(2)その露光後、コネクタ46からケーブル70を外した後、マスクM1~M7はキャリア45に載置された状態でマスクローダ系(不図示)によってマスクステージMSTとマスクライブラリ(不図示)との間を搬送され、キャリア45に載置された状態でマスクライブラリに収納される。2回目以降にマスクM1~M7を使用する際には、マスクM1~M7はキャリア45に載置された状態でマスクローダ系によってマスクステージMST上に載置される。 Further, corresponding to step 207 during scanning exposure, an image of the pattern of the masks M1 to M7 (mask stage MST) measured via the laser interferometer and the exposed area EP (plate stage PTST) of the plate PT. By driving the actuator systems AC1 to AC7 on the
(2) After the exposure, after the
本発明の第3の実施形態につき図12及び図13を参照して説明する。本実施形態では、第2の実施形態と同様に図12(A)に示すように、キャリア45上にマスクM1~M7を載置するが、キャリア45上のアクチュエータ系ACS1~ACS7が第2の実施形態とは異なりオペレータによってマニュアルで駆動される点が異なっている。以下、図12(A)、図12(B)及び図13において、図10(A)、図10(B)及び図11(A)、図11(B)に対応する部分には同一符号を付してその詳細な説明を省略する。 [Third Embodiment]
A third embodiment of the present invention will be described with reference to FIGS. In this embodiment, as in the second embodiment, masks M1 to M7 are placed on the
また、露光後には、マスクM1~M7はキャリア45に載置された状態でマスクライブラリに搬送されて格納される。その後、マスクM1~M7を使用する際には、プリアライメントが完了しているため、マスクM1~M7が載置されたキャリア45をそのままマスクステージMST上に搬送するのみでよい。従って、マスクM1~M7のアライメントを迅速に行うことができる。 In this embodiment, since the actuator systems ACS1 to ACS7 are driven by a manual method, the operation of individually driving the masks M1 to M7 is not executed during exposure. For this reason, the masks M1 to M7 can be held on the
After the exposure, the masks M1 to M7 are transported to the mask library and stored in a state of being placed on the
本発明の第4の実施形態につき図14及び図15を参照して説明する。本実施形態では、第2の実施形態と同様に図14(A)に示すように、キャリア47A上にマスクM1~M7を載置して搬送するが、キャリア47Aにはアクチュエータ系が設けられておらず、第1の実施形態と同様にマスクステージMST上にアクチュエータ系AC1~AC7が設けられている。以下、図15(A)、図15(B)において、図4(A)、図4(D)に対応する部分には同一符号を付してその詳細な説明を省略する。 [Fourth Embodiment]
A fourth embodiment of the present invention will be described with reference to FIGS. In the present embodiment, as in the second embodiment, as shown in FIG. 14A, masks M1 to M7 are placed on the
図16のステップS401(パターン形成工程)では、先ず、露光対象の基板上にフォトレジストを塗布して感光基板を準備する塗布工程、上記の走査型露光装置を用いて液晶表示素子用のマスクのパターンをその感光基板上に転写露光する露光工程、及びその感光基板を現像する現像工程が実行される。この塗布工程、露光工程、及び現像工程を含むリソグラフィ工程によって、その基板上に所定のレジストパターンが形成される。このリソグラフィ工程に続いて、そのレジストパターンを加工用のマスクとしたエッチング工程、及びレジスト剥離工程等を経て、その基板上に多数の電極等を含む所定パターンが形成される。そのリソグラフィ工程等は、その基板上のレイヤ数に応じて複数回実行される。 A liquid crystal device such as a liquid crystal display element is formed by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a substrate (glass plate) using the projection exposure apparatus (scanning exposure apparatus) of the embodiment described above. Can be manufactured. Hereinafter, an example of this manufacturing method will be described with reference to steps S401 to S404 in FIG.
In step S401 (pattern formation process) in FIG. 16, first, a coating process for preparing a photosensitive substrate by applying a photoresist on a substrate to be exposed, and a mask for a liquid crystal display element using the above scanning exposure apparatus. An exposure process for transferring and exposing the pattern onto the photosensitive substrate and a developing process for developing the photosensitive substrate are performed. A predetermined resist pattern is formed on the substrate by a lithography process including the coating process, the exposure process, and the development process. Following this lithography process, a predetermined pattern including a large number of electrodes and the like is formed on the substrate through an etching process using the resist pattern as a processing mask, a resist stripping process, and the like. The lithography process or the like is executed a plurality of times according to the number of layers on the substrate.
また、上記の実施形態の投影露光装置EX(露光装置)は、本願請求の範囲に挙げられたステージ(MST,PTST)等の各構成要素を含む各種サブシステムを、所定の機械的精度、電気的精度、光学的精度を保つように、組み立てることで製造される。これら各種精度を確保するために、この組み立ての前後には、各種光学系については光学的精度を達成するための調整、各種機械系については機械的精度を達成するための調整、各種電気系については電気的精度を達成するための調整が行われる。各種サブシステムから露光装置への組み立て工程は、各種サブシステム相互の、機械的接続、電気回路の配線接続、気圧回路の配管接続等が含まれる。この各種サブシステムから露光装置への組み立て工程の前に、各サブシステム個々の組み立て工程があることはいうまでもない。各種サブシステムの露光装置への組み立て工程が終了したら、総合調整が行われ、露光装置全体としての各種精度が確保される。なお、露光装置の製造は温度及びクリーン度等が管理されたクリーンルームで行うことが望ましい。 In the above-described embodiment, the plate PT such as a glass plate is used as an object to which the pattern of the masks M1 to M7 is transferred (an object to be exposed through the pattern). However, a solid plate (such as a glass plate) Not only a substrate) but also a flexible film-like or sheet-like object can be used.
Further, the projection exposure apparatus EX (exposure apparatus) of the above-described embodiment has various mechanical systems including components (MST, PTST) recited in the claims of the present application, with predetermined mechanical accuracy, electrical Manufactured by assembling so as to maintain optical accuracy and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
Claims (33)
- パターンが形成された複数のマスクを第1ステージ上に支持する支持工程と、
前記複数のマスクのうち少なくとも1つの制御対象マスクを前記第1ステージに対して個別に動かして該複数のマスクの相対配置を制御する制御工程と、
前記相対配置が制御された前記複数のマスクの前記パターンを介し、第2ステージに載置された物体を露光する露光工程と、
を含むことを特徴とする露光方法。 A supporting step of supporting a plurality of masks on which a pattern is formed on the first stage;
A control step of controlling the relative arrangement of the plurality of masks by individually moving at least one control target mask of the plurality of masks with respect to the first stage;
An exposure step of exposing an object placed on a second stage through the pattern of the plurality of masks, the relative arrangement of which is controlled;
An exposure method comprising: - 前記制御工程は、
前記複数のマスク間の相対的な配置誤差と、前記制御対象マスクと前記物体との間の相対的な配置誤差との少なくとも一方を計測する計測工程と、
前記計測工程の計測結果に基づいて前記制御対象マスクを前記第1ステージに対して動かす駆動工程と、を含むことを特徴とする請求項1に記載の露光方法。 The control step includes
A measurement step of measuring at least one of a relative placement error between the plurality of masks and a relative placement error between the control target mask and the object;
The exposure method according to claim 1, further comprising: a driving step of moving the control target mask relative to the first stage based on a measurement result of the measurement step. - 前記第1ステージと前記第2ステージとを同期して移動させる同期移動工程を含み、
前記制御工程は、前記計測工程の計測結果に基づいて、前記第1ステージの移動位置に対応する前記制御対象マスクの駆動量を設定する設定工程を含み、
前記駆動工程は、前記第1ステージの移動にともない、前記設定工程によって設定された前記駆動量に基づいて前記制御対象マスクを動かすことを特徴とする請求項2に記載の露光方法。 Including a synchronous movement step of moving the first stage and the second stage synchronously;
The control step includes a setting step of setting a drive amount of the control target mask corresponding to a movement position of the first stage based on a measurement result of the measurement step,
3. The exposure method according to claim 2, wherein in the driving step, the mask to be controlled is moved based on the driving amount set in the setting step as the first stage moves. - 前記計測工程は、前記複数のマスクに設けられた各計測マークと前記第2ステージに設けられた基準マークとの間の位置ずれ量を計測し、該位置ずれ量に基づいて前記複数のマスク間の相対的な配置誤差を計測することを特徴とする請求項2または3に記載の露光方法。 The measuring step measures a positional deviation amount between each measurement mark provided on the plurality of masks and a reference mark provided on the second stage, and based on the positional deviation amount, between the plurality of masks. 4. The exposure method according to claim 2, wherein a relative arrangement error is measured.
- 前記計測工程は、前記複数のマスクに設けられた各計測マークの座標を計測し、該座標に基づいて前記複数のマスク間の相対的な配置誤差を計測することを特徴とする請求項2または3に記載の露光方法。 3. The measurement step according to claim 2, wherein coordinates of each measurement mark provided on the plurality of masks are measured, and a relative arrangement error between the plurality of masks is measured based on the coordinates. 4. The exposure method according to 3.
- 前記計測工程は、前記制御対象マスクに設けられた各マスク上マークと前記物体に設けられた物体上マークとの間の位置ずれ量を計測し、該位置ずれ量に基づいて前記制御対象マスクと前記物体との間の相対的な配置誤差を計測することを特徴とする請求項2~5のいずれか一項に記載の露光方法。 The measurement step measures a positional deviation amount between each on-mask mark provided on the control target mask and the on-object mark provided on the object, and based on the positional deviation amount, the control target mask 6. The exposure method according to claim 2, wherein a relative arrangement error between the object and the object is measured.
- 前記相対的な配置誤差は、相対的な位置誤差及び回転誤差の少なくとも一方を含むことを特徴とする請求項2~6のいずれか一項に記載の露光方法。 The exposure method according to any one of claims 2 to 6, wherein the relative arrangement error includes at least one of a relative position error and a rotation error.
- 前記支持工程は、保持部材を介して前記複数のマスクを支持し、
前記駆動工程は、前記制御対象マスクを前記保持部材に対して動かすことを特徴とする請求項2~7のいずれか一項に記載の露光方法。 The supporting step supports the plurality of masks via a holding member,
The exposure method according to any one of claims 2 to 7, wherein in the driving step, the mask to be controlled is moved with respect to the holding member. - 前記駆動工程は、前記制御対象マスクに外設された部材を介して該制御対象マスクを動かすことを特徴とする請求項2~8のいずれか一項に記載の露光方法。 The exposure method according to any one of claims 2 to 8, wherein, in the driving step, the control target mask is moved via a member provided outside the control target mask.
- 前記駆動工程は、前記制御対象マスクの位置及び回転角の少なくとも一方を変化させることを特徴とする請求項2~9のいずれか一項に記載の露光方法。 10. The exposure method according to claim 2, wherein the driving step changes at least one of a position and a rotation angle of the control target mask.
- 前記複数のマスクを搬送部材上に載置し、前記複数のマスクが載置された前記搬送部材を前記第1ステージ上に搬送し、前記搬送部材上の前記複数のマスクを前記第1ステージに受け渡し、前記複数のマスクを受け渡した前記搬送部材を前記第1ステージの退避部に退避させる退避工程を含むことを特徴とする請求項1~10のいずれか一項に記載の露光方法。 The plurality of masks are placed on a transport member, the transport member on which the plurality of masks are placed is transported onto the first stage, and the plurality of masks on the transport member are placed on the first stage. The exposure method according to any one of claims 1 to 10, further comprising a retracting step of retracting and transferring the transport member that has received the plurality of masks to a retracting portion of the first stage.
- 前記複数のマスクを前記保持部材上に載置するマスク載置工程と、
前記複数のマスクが載置された前記保持部材を前記第1ステージ上に搬送する部材搬送工程と、
を含むことを特徴とする請求項8に記載の露光方法。 A mask placing step of placing the plurality of masks on the holding member;
A member conveying step of conveying the holding member on which the plurality of masks are placed on the first stage;
The exposure method according to claim 8, comprising: - 前記露光工程は、前記複数のマスクにそれぞれ対応して配置された複数の投影光学系を介して前記物体を露光することを特徴とする請求項1~12のいずれか一項に記載の露光方法。 The exposure method according to any one of claims 1 to 12, wherein in the exposure step, the object is exposed through a plurality of projection optical systems respectively arranged corresponding to the plurality of masks. .
- 前記第1ステージと前記第2ステージとを同期して移動させる同期移動工程を含み、
前記露光工程は、前記同期移動工程中に前記物体を露光することを特徴とする請求項1~13のいずれか一項に記載の露光方法。 Including a synchronous movement step of moving the first stage and the second stage synchronously;
The exposure method according to any one of claims 1 to 13, wherein the exposure step exposes the object during the synchronous movement step. - 請求項1~14のいずれか一項に記載の露光方法を用いて、前記複数のマスクの前記パターンを前記第2ステージに載置された感光基板に転写する転写工程と、
前記パターンが転写された前記感光基板を現像し、前記パターンに対応する形状の転写パターン層を前記感光基板上に形成する現像工程と、
前記転写パターン層を介して前記感光基板を加工する加工工程と、
を含むことを特徴とするデバイス製造方法。 A transfer step of transferring the pattern of the plurality of masks to a photosensitive substrate placed on the second stage using the exposure method according to any one of claims 1 to 14.
Developing the photosensitive substrate to which the pattern has been transferred, and forming a transfer pattern layer having a shape corresponding to the pattern on the photosensitive substrate;
A processing step of processing the photosensitive substrate through the transfer pattern layer;
A device manufacturing method comprising: - パターンが形成された複数のマスクを支持する第1ステージと、
物体が載置される第2ステージと、
前記複数のマスクのうち少なくとも1つの制御対象マスクを前記第1ステージに対して個別に動かして該複数のマスクの相対配置を制御する制御装置と、
前記相対配置が制御された前記複数のマスクの前記パターンを介して前記物体に露光光を照射する照明系と、
を備えることを特徴とする露光装置。 A first stage for supporting a plurality of masks on which a pattern is formed;
A second stage on which the object is placed;
A control device for controlling the relative arrangement of the plurality of masks by individually moving at least one control target mask among the plurality of masks with respect to the first stage;
An illumination system that irradiates the object with exposure light through the patterns of the plurality of masks, the relative arrangement of which is controlled;
An exposure apparatus comprising: - 前記制御装置は、
前記複数のマスク間の相対的な配置誤差と、前記制御対象マスクと前記物体との間の相対的な配置誤差との少なくとも一方を計測する計測装置と、
前記計測装置の計測結果に基づいて前記制御対象マスクを前記第1ステージに対して動かす駆動装置と、を含むことを特徴とする請求項16に記載の露光装置。 The controller is
A measuring device that measures at least one of a relative placement error between the plurality of masks and a relative placement error between the control target mask and the object;
The exposure apparatus according to claim 16, further comprising: a drive device that moves the control target mask relative to the first stage based on a measurement result of the measurement device. - 前記第1ステージと前記第2ステージとを同期して移動させるステージ制御部を備え、
前記制御装置は、前記計測装置の計測結果に基づいて、前記第1ステージの移動位置に対応する前記制御対象マスクの駆動量を設定する設定制御部を含み、
前記駆動装置は、前記第1ステージの移動にともない、前記駆動量に基づいて前記制御対象マスクを動かすことを特徴とする請求項17に記載の露光装置。 A stage control unit that moves the first stage and the second stage synchronously;
The control device includes a setting control unit that sets a drive amount of the control target mask corresponding to a movement position of the first stage based on a measurement result of the measurement device,
The exposure apparatus according to claim 17, wherein the driving apparatus moves the control target mask based on the driving amount as the first stage moves. - 前記計測装置は、前記複数のマスクに設けられた各計測マークと前記第2ステージに設けられた基準マークとの間の位置ずれ量を計測し、該位置ずれ量に基づいて前記複数のマスク間の相対的な配置誤差を計測することを特徴とする請求項17または18に記載の露光装置。 The measuring device measures a positional deviation amount between each measurement mark provided on the plurality of masks and a reference mark provided on the second stage, and based on the positional deviation amount, the plurality of masks are measured. 19. The exposure apparatus according to claim 17, wherein a relative arrangement error is measured.
- 前記計測装置は、前記複数のマスクに設けられた各計測マークの座標を計測し、該座標に基づいて前記複数のマスク間の相対的な配置誤差を計測することを特徴とする請求項17または18に記載の露光装置。 18. The measurement device according to claim 17, wherein the measurement device measures coordinates of each measurement mark provided on the plurality of masks, and measures a relative arrangement error between the plurality of masks based on the coordinates. 18. An exposure apparatus according to 18.
- 前記計測装置は、前記制御対象マスクに設けられた各マスク上マークと前記物体に設けられた物体上マークとの間の位置ずれ量を計測し、該位置ずれ量に基づいて前記制御対象マスクと前記物体との間の相対的な配置誤差を計測することを特徴とする請求項17~20のいずれか一項に記載の露光装置。 The measuring device measures a positional deviation amount between each on-mask mark provided on the control target mask and the on-object mark provided on the object, and based on the positional deviation amount, the control target mask The exposure apparatus according to any one of claims 17 to 20, wherein a relative arrangement error between the object and the object is measured.
- 前記相対的な配置誤差は、相対的な位置誤差及び回転誤差の少なくとも一方を含むことを特徴とする請求項17~21のいずれか一項に記載の露光装置。 The exposure apparatus according to any one of claims 17 to 21, wherein the relative arrangement error includes at least one of a relative position error and a rotation error.
- 前記第1ステージは、保持部材を介して前記複数のマスクを支持し、
前記駆動装置は、前記制御対象マスクを前記保持部材に対して動かすことを特徴とする請求項17~22のいずれか一項に記載の露光装置。 The first stage supports the plurality of masks via a holding member,
The exposure apparatus according to any one of claims 17 to 22, wherein the driving device moves the control target mask with respect to the holding member. - 前記駆動装置は、前記制御対象マスクに外設された部材を介して該制御対象マスクを動かすことを特徴とする請求項17~23のいずれか一項に記載の露光装置。 The exposure apparatus according to any one of claims 17 to 23, wherein the driving device moves the control target mask via a member provided outside the control target mask.
- 前記駆動装置は、前記制御対象マスクの位置及び回転角の少なくとも一方を変化させることを特徴とする請求項17~24のいずれか一項に記載の露光装置。 25. The exposure apparatus according to claim 17, wherein the driving device changes at least one of a position and a rotation angle of the control target mask.
- 前記駆動装置は、電力が供給されない状態で作動位置をほぼ一定に維持することを特徴とする請求項17~25のいずれか一項に記載の露光装置。 The exposure apparatus according to any one of claims 17 to 25, wherein the driving device maintains an operation position substantially constant in a state where power is not supplied.
- 前記複数のマスクが載置された搬送部材を前記第1ステージ上に搬送し、前記搬送部材上の前記複数のマスクを前記第1ステージのマスク支持部に受け渡し、該複数のマスクを受け渡した前記搬送部材を前記第1ステージの退避部に退避させる搬送装置を備えることを特徴とする請求項16~26のいずれか一項に記載の露光装置。 The transfer member on which the plurality of masks are placed is transferred onto the first stage, the plurality of masks on the transfer member are transferred to the mask support portion of the first stage, and the plurality of masks are transferred The exposure apparatus according to any one of claims 16 to 26, further comprising a transport device that retracts the transport member to a retracting portion of the first stage.
- 前記複数のマスクが載置された前記搬送部材を保管する保管部を備え、
前記搬送装置は、前記保管部に保管された前記搬送部材を前記第1ステージ上に搬送することを特徴とする請求項27に記載の露光装置。 A storage unit for storing the transport member on which the plurality of masks are placed;
28. The exposure apparatus according to claim 27, wherein the transport device transports the transport member stored in the storage unit onto the first stage. - 前記複数のマスクが載置された前記保持部材を前記第1ステージ上に搬送する搬送装置を備えることを特徴とする請求項23に記載の露光装置。 24. The exposure apparatus according to claim 23, further comprising a transport device that transports the holding member on which the plurality of masks are placed onto the first stage.
- 前記複数のマスクに対応して配置され、該複数のマスクの前記パターンの像を前記物体上に投影する複数の投影光学系を備え、
前記照明系は、前記複数の投影光学系を介して前記物体に前記露光光を照射することを特徴とする請求項16~29のいずれか一項に記載の露光装置。 A plurality of projection optical systems arranged corresponding to the plurality of masks and projecting images of the patterns of the plurality of masks onto the object;
The exposure apparatus according to any one of claims 16 to 29, wherein the illumination system irradiates the object with the exposure light via the plurality of projection optical systems. - 前記投影光学系は、前記パターンの像を拡大して投影することを特徴とする請求項30に記載の露光装置。 The exposure apparatus according to claim 30, wherein the projection optical system projects the pattern image in an enlarged manner.
- 前記第1ステージと前記第2ステージとを同期して移動させるステージ制御部を備え、
前記照明系は、前記ステージ制御部が移動させる前記第1ステージ上の前記複数のマスクの前記パターンを介し、該第1ステージに同期して移動される前記第2ステージ上の前記物体に露光光を照射することを特徴とする請求項16~31のいずれか一項に記載の露光装置。 A stage control unit that moves the first stage and the second stage synchronously;
The illumination system exposes the object on the second stage moved in synchronization with the first stage via the patterns of the plurality of masks on the first stage moved by the stage controller. The exposure apparatus according to any one of claims 16 to 31, wherein - 請求項16~32のいずれか一項に記載の露光装置を用いて、前記複数のマスクの前記パターンを前記第2ステージに載置された感光基板に転写する転写工程と、
前記パターンが転写された前記感光基板を現像し、前記パターンに対応する形状の転写パターン層を前記感光基板上に形成する現像工程と、
前記転写パターン層を介して前記感光基板を加工する加工工程と、
を含むことを特徴とするデバイス製造方法。 A transfer step of transferring the pattern of the plurality of masks to a photosensitive substrate placed on the second stage using the exposure apparatus according to any one of claims 16 to 32;
Developing the photosensitive substrate to which the pattern has been transferred, and forming a transfer pattern layer having a shape corresponding to the pattern on the photosensitive substrate;
A processing step of processing the photosensitive substrate through the transfer pattern layer;
A device manufacturing method comprising:
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