JP4729899B2 - Scanning projection exposure apparatus, mask stage running correction method, and microdevice manufacturing method - Google Patents

Description

  The present invention relates to a scanning projection exposure apparatus for manufacturing a microdevice such as a flat panel display element such as a semiconductor element and a liquid crystal display element, and a thin film magnetic head in a lithography process, and a mask stage using the scanning projection exposure apparatus. The present invention relates to a running correction method and a micro device manufacturing method.

  In the case of manufacturing a semiconductor element or a liquid crystal display element which is one of micro devices, a pattern of a mask (reticle, photomask, etc.) is coated with a photosensitive agent such as a photoresist through a projection optical system ( A projection exposure apparatus that performs projection exposure on a glass plate, a semiconductor wafer, or the like is used.

  In recent years, a large glass substrate is used as a substrate when manufacturing a liquid crystal display device, and a scanning type exposure apparatus that continuously transfers a mask pattern onto the substrate while synchronously scanning the mask stage and the substrate stage is used. ing. In this scanning projection exposure apparatus, instead of using one large projection optical system, a plurality of small partial projection optical systems are arranged in a plurality of rows at predetermined intervals along the scanning direction, and each partial projection optical system Then, the pattern of each mask is exposed on the substrate.

  In this type of scanning projection exposure apparatus, in order to expose the pattern image of the mask at an accurate position on the substrate, it is necessary to correct the rotation of the mask with respect to the mask stage. In order to correct the rotation of the mask with respect to the mask stage, the positional deviation between the plurality of reference marks arranged on the substrate stage and the plurality of mask marks arranged at both ends in the scanning direction of the mask was measured and measured. A method of correcting the rotation of the mask by calculating the amount of correction of the mask rotation with respect to the scanning direction of the mask stage based on the positional deviation has been proposed (see Patent Document 1).

JP 2001-296667 A

  By the way, with an increase in size of the mask, a linear motor for driving the mask stage in the scanning direction and a voice coil motor for driving the mask stage in a direction orthogonal to the scanning direction (hereinafter referred to as a non-scanning direction) are also increased in size. The heat generated by driving the mask stage causes deformation of the mask stage. In addition, even when the substrate size is increased, it is necessary to improve the illuminance of the exposure light in order not to reduce the throughput. By increasing the illuminance of the exposure light, the amount of heat generation is increased and the mask stage is deformed. It is a factor.

  Conventionally, the position of the mask stage running in the non-scanning direction was considered to be a fixed value, but it was found that the position of the mask stage running in the non-scanning direction changes like a bow due to the deformation of the mask stage described above. In a conventional scanning projection exposure apparatus, productivity is reduced because test exposure is performed and a correction amount is calculated when deformation of the mask stage has an adverse effect on exposure. Also, every time the mask is replaced, the amount of rotation of the mask relative to the mask stage is measured and corrected, but if the position of the mask stage running in the non-scanning direction changes like a bow, the measured amount of rotation of the mask is There is a problem that the running accuracy of the mask stage is taken into account, and the amount of rotation of the mask cannot be measured accurately. Therefore, the position of the mask cannot be corrected accurately, and the overlay accuracy of the mask pattern and the arrangement accuracy of the optical members constituting the scanning projection exposure apparatus cannot be improved.

  An object of the present invention is to provide a scanning projection exposure apparatus capable of accurately calculating a mask rotation correction value and a mask stage running correction value in a non-scanning direction, and a mask stage running correction using the scanning projection exposure apparatus. It is to provide a method and a method for manufacturing a microdevice.

A scanning projection exposure apparatus of the present invention includes a mask stage for placing and scanning a mask, and a substrate stage for placing and scanning a substrate, and the mask stage and the substrate stage are In a scanning projection exposure apparatus for projecting and exposing the pattern of the mask onto the substrate by relatively moving relative to a projection optical system including one partial projection optical system and a second partial projection optical system, the substrate The relative position between the reference mark placed on the stage and the first mark placed on the mask and the reference mark is determined by using the first partial projection optical system and the second partial projection of the projection optical system. Measured as two first relative positions via optical systems, respectively, and arranged at a predetermined distance with respect to a direction parallel to the synchronous movement direction with respect to the positions of the reference mark and the first mask mark. A measuring device that measures a relative position with respect to the second mask mark as a second relative position via one of the first partial projection optical system and the second partial projection optical system, and the measurement Correction value calculation for obtaining a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage by a function equation of quadratic or higher obtained from the two first relative positions and one second relative position measured by the apparatus The first partial projection optical system and the second partial projection optical system are arranged at a predetermined distance with respect to a direction parallel to the synchronous movement direction.

Further, the mask stage running correction method of the present invention includes a mask stage for placing and scanning a mask, and a substrate stage for placing and scanning a substrate, and the mask stage, the substrate stage, In a scanning projection exposure apparatus for projecting and exposing the pattern of the mask onto the substrate by relatively moving relative to the projection optical system including the first partial projection optical system and the second partial projection optical system. The relative positions of the reference mark placed on the substrate stage and the first mark placed on the mask and the reference mark are determined based on the first partial projection optical system and the second projection optical system. Are measured as two first relative positions through each of the partial projection optical systems, and predetermined with respect to a direction parallel to the synchronous movement direction with respect to the positions of the reference mark and the first mask mark. Measurement for measuring a relative position with a second mask mark arranged at a distance as a second relative position via one of the first partial projection optical system and the second partial projection optical system. A running correction value in a direction orthogonal to the synchronous movement direction of the mask stage by means of a function expression of quadratic or higher obtained from the apparatus and the two first relative positions and one second relative position measured by the measuring apparatus The first partial projection optical system and the second partial projection optical system are arranged at a predetermined distance with respect to a direction parallel to the synchronous movement direction. Features.

A method of manufacturing a micro device of the present invention, an exposure step of exposing a pattern of a mask on a photosensitive substrate using a scanning projection exposure apparatus of the present invention, the photosensitive substrate exposed by said exposure step And a developing step for developing.

A method of manufacturing a micro device of the present invention, an exposure step of exposing a pattern of a mask on a photosensitive substrate using a scanning projection exposure apparatus which is corrected by driving the correction method of the mask stage of the present invention, the exposure And a developing step of developing the photosensitive substrate exposed by the step.

  According to the scanning projection exposure apparatus of the present invention, the running correction value in the non-scanning direction of the mask stage can be accurately calculated based on the first relative position and the second relative position measured by the measuring means. Also, the mask rotation correction value for the mask stage and the second or higher-order running correction value in the non-scanning direction of the mask stage can be calculated separately and simultaneously. Therefore, even when the mask stage is deformed by heat or the like, and the position of the mask stage running in the non-scanning direction changes nonlinearly, the mask stage running correction in the non-scanning direction or the board stage is accurately corrected. Therefore, exposure can be performed with high throughput and high accuracy.

According to the mask stage running correction method of the present invention, the running correction value in the non-scanning direction of the mask stage can be accurately calculated based on the measured relative position. Also, the mask rotation correction value for the mask stage and the second or higher-order running correction value in the non-scanning direction of the mask stage can be calculated separately and simultaneously. Therefore, even when the mask stage is deformed by heat or the like, and the position of the mask stage running in the non-scanning direction changes nonlinearly, the mask stage running correction in the non-scanning direction or the board stage is accurately corrected. Therefore, exposure can be performed with high throughput and high accuracy.

  Further, according to the method of manufacturing a microdevice of the present invention, the rotation correction of the mask relative to the mask stage and the non-scanning direction travel correction of the mask stage by the scanning projection exposure apparatus of the present invention or the mask stage travel correction method of the present invention Alternatively, since exposure is performed using a scanning projection exposure apparatus that has been corrected for running on the substrate stage, microdevices can be manufactured with high throughput and high accuracy.

  Embodiments of the present invention will be described below with reference to the drawings. In this embodiment, the projection optical system PL is composed of a plurality of catadioptric partial projection optical systems PL1 to PL7 that partially project a part of the pattern of the mask M onto the plate P as a photosensitive substrate. On the other hand, a step-and-scan type scanning projection exposure apparatus EX that scans and exposes an image of a pattern formed on the mask M on the plate P by synchronously moving the mask M and the plate P in the scanning direction is given as an example. I will explain. Here, as the photosensitive substrate, a photosensitive substrate for a display element such as a liquid crystal panel having an outer diameter of 500 mm or more (one side or diagonal of the photosensitive substrate is 500 mm or more) is used. In the following description, the optical axis direction of the projection optical system PL is the Z-axis direction, the directions perpendicular to the Z-axis direction are the synchronous movement directions of the mask M and the plate P are the X-axis direction, the Z-axis direction, and the X-axis direction. The direction orthogonal to the Y-axis direction. The directions around the X, Y, and Z axes are the θX, θY, and θZ directions.

  FIG. 1 is a perspective view showing an overall schematic configuration of a scanning projection exposure apparatus according to this embodiment. The scanning projection exposure apparatus according to this embodiment includes a light source 2 composed of, for example, an ultrahigh pressure mercury lamp light source. The light beam emitted from the light source 2 is reflected by the elliptical mirror 4 and the dichroic mirror 6 and enters the collimating lens 8. That is, light in a wavelength region including light of g-line (wavelength 436 nm), h-line (wavelength 405 nm) and i-line (wavelength 365 nm) is extracted by the reflective film of the elliptical mirror 4 and the reflective film of the dichroic mirror 6, g, Light in a wavelength range including h and i-line light is incident on the collimating lens 8. Further, the light in the wavelength region including g, h, and i-line light forms a light source image at the second focal position of the elliptical mirror 4 because the light source 2 is disposed at the first focal position of the elliptical mirror 4. . The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 4 becomes parallel light by the collimator lens 8 and passes through the wavelength selection filter 10a or 10b that transmits only the light beam in the predetermined exposure wavelength region.

  The light beam that has passed through the wavelength selection filter 10a or 10b is condensed by the condenser lens 12 onto the entrance 14a of the light guide fiber 14. Here, the light guide fiber 14 is, for example, a random light guide fiber configured by bundling a large number of fiber strands at random, and includes an entrance port 14a, five exit ports 14b, 14d, 14f, 14g, 14h, and more. Two injection ports (not shown) are provided. The light beam incident on the entrance 14a of the light guide fiber 14 is propagated through the inside of the light guide fiber 14 and then split from the five exits 14b, 14d, 14f, 14g, 14h, and two exits (not shown). And are incident on a plurality of partial illumination optical systems (in this embodiment, seven partial illumination optical systems IL1 to IL7) that partially illuminate the mask M.

  A neutral density filter mechanism 18 for dynamically changing the sensitivity of the resist applied to the plate P to be exposed is disposed between the wavelength selection filter 10a or 10b and the condenser lens 12. The neutral density filter mechanism 18 is composed of a glass plate in which a minute pattern is formed by a light shielding material such as Cr, and the pattern density is linearly varied by driving in a direction orthogonal to the optical axis. Adjust the illuminance of light.

  In this embodiment, one light source is used, but each light source may be provided according to each illumination field. Further, a plurality of light sources may be provided, and light beams from the many light sources may be divided into respective illumination fields by a light guide fiber such as an optical fiber having good randomness. Further, as the light source, an ultraviolet radiation type LED or an ultraviolet radiation type LD may be used. In this embodiment, optical members (dichroic mirror 6, collimating lens 8, wavelength selection filter 10a (10b), condensing lens 12, and neutral density filter 18) for guiding the light beam emitted from the light source to light guide fiber 14; The partial illumination optical systems IL1 to IL7 constitute the illumination optical system IL.

  FIG. 2 is a diagram showing a schematic configuration of the partial illumination optical system IL1 (the exit port 14b of the light guide fiber 14 to the condenser lens 24b) and the partial projection optical system PL1 of the scanning projection exposure apparatus according to this embodiment. The configuration of the partial illumination optical systems IL2 to IL7 is the same as that of the partial illumination optical system IL1, and the configuration of the partial projection optical systems PL2 to PL7 is the same as the configuration of the partial projection optical system PL1.

  The light beam emitted from the exit port 14b of the light guide fiber 14 enters the collimator lens 16b and is converted into parallel light by the collimator lens 16b. The light beam collected by the collimator lens 16b is incident on a fly-eye lens 22b which is an optical integrator. Here, the fly-eye lens 22b is configured by arranging a large number of positive lens elements vertically and horizontally and densely so that the central axis extends along the optical axis. Accordingly, the light beam incident on the fly-eye lens 22b is wavefront-divided by a large number of lens elements, and forms a secondary light source composed of the same number of light source images as the number of lens elements on the rear focal plane (near the exit surface). That is, a substantial surface light source is formed on the rear focal plane of the fly-eye lens 22b. Light flux from a number of secondary light sources formed on the rear focal plane of the fly-eye lens 22b illuminates the mask M almost uniformly by the condenser lens 24b.

  The light from the illumination area of the mask M, that is, the illumination area corresponding to the partial illumination optical system IL1, is arranged so as to correspond to each illumination area, and a plurality of images each projecting an image of the pattern of the mask M onto the plate P. Of the partial projection optical systems (in this embodiment, seven partial projection optical systems PL1 to PL7) are incident on the partial projection optical system PL1. That is, the light passes through the prism mirror 32b and the refractive lens system 34b, is reflected by the concave mirror 36b disposed on the pupil plane of the optical system, passes through the refractive lens system 34b again, is reflected by the prism mirror 32b, and is reflected on the field stop 38b. An intermediate image of the partial projection optical system PL1 is formed. Here, the prism mirror 32b, the refractive lens system 34b, and the concave mirror 36b constitute a first set of catadioptric optical system. Further, the process proceeds to a lower optical system having substantially the same optical system as the optical system up to the intermediate image, and passes through the prism mirror 40b, the refractive lens system 42b, the concave mirror 44b, the refractive lens system 42b, and the prism mirror 40b. A pattern image of the mask M is formed on P. Here, the prism mirror 40b, the refractive lens system 42b, and the concave mirror 44b constitute a second set of catadioptric optical system. The image at this time is an erect image.

  The light that has passed through the partial illumination optical systems IL2 to IL7 illuminates the mask M almost uniformly by the condenser lens provided in each of the partial illumination optical systems IL2 to IL7. The light is incident on the corresponding partial projection optical systems PL2 to PL7. The light transmitted through the partial projection optical systems PL2 to PL7 forms a pattern image of the mask M on the plate P, respectively.

  Here, the mask M is fixed by a mask holder (not shown), and is placed on the mask stage MST (see FIG. 3). The mask stage MST that supports the mask M includes an X laser interferometer 51x that detects the position of the mask stage MST in the X-axis direction, and a Y laser interferometer that detects the position of the mask stage MST in the Y-axis direction (see FIG. Not shown). An X moving mirror 51 extending in the Y axis direction is provided at the + X side edge of the mask stage MST, and a Y extending in the X axis direction is orthogonal to the X moving mirror 51 at the + Y side edge. A moving mirror (not shown) is provided. An X laser interferometer 51x is disposed opposite to the X movable mirror 51, and a Y laser interferometer is disposed opposite to the Y movable mirror. The X laser interferometer 51 x irradiates the X movable mirror 51 with laser light and detects the distance from the X movable mirror 51. The Y laser interferometer irradiates the Y moving mirror with laser light and detects the distance from the Y moving mirror. The detection result of the laser interferometer is output to the control device CONT, and the control device CONT obtains the position of the mask stage MST (and thus the mask M) in the X-axis and Y-axis directions based on the detection result of the laser interferometer. Further, by providing a plurality of X laser interferometers (or Y laser interferometers), the rotation amount of the mask stage MST in the θZ direction can be obtained. The control device CONT monitors the position (posture) of the mask stage MST from the output of the laser interferometer and controls the mask stage drive unit MSTD to set the mask stage MST to a desired position (posture).

  The plate P is fixed by a plate holder (not shown), and is placed on the substrate stage PTS (see FIG. 3). The substrate stage PST that supports the plate P includes an X laser interferometer 50x that detects the position of the substrate stage PST in the X-axis direction and a Y laser interferometer that detects the position of the substrate stage PST in the Y-axis direction (see FIG. Not shown). An X moving mirror 50 extending in the Y axis direction is provided at the + X side edge of the substrate stage PST, and a Y extending in the X axis direction so as to be orthogonal to the X moving mirror 50 is provided at the + Y side edge. A moving mirror (not shown) is provided. An X laser interferometer 50x is disposed opposite to the X movable mirror 50, and a Y laser interferometer is disposed opposite to the Y movable mirror. The X laser interferometer 50 x irradiates the X moving mirror 50 with laser light and detects the distance from the X moving mirror 50. The Y laser interferometer irradiates the Y moving mirror with laser light and detects the distance from the Y moving mirror. The detection result of the laser interferometer is output to the control device CONT, and the control device CONT obtains the position of the substrate stage PST (and hence the plate P) in the X-axis and Y-axis directions based on the detection result of the laser interferometer. Further, by providing a plurality of X laser interferometers (or Y laser interferometers), the rotation amount of the substrate stage PST in the θZ direction can be obtained. The control device CONT monitors the position (posture) of the substrate stage PST from the output of the laser interferometer, and controls the substrate stage drive unit PSTD to set the substrate stage PST to a desired position (posture).

  The partial illumination optical systems IL1, IL3, IL5, and IL7 are arranged in a first row with a predetermined interval in a direction orthogonal to the scanning direction (a direction crossing the scanning direction), and the partial illumination optical systems IL1, IL3, and IL5 are arranged. Similarly, partial projection optical systems PL1, PL3, PL5, and PL7 (first projection optical units) provided corresponding to IL7 are also arranged in the first row with a predetermined interval in a direction orthogonal to the scanning direction. The partial illumination optical systems IL2, IL4, and IL6 are arranged in a second row with a predetermined interval in a direction orthogonal to the scanning direction, and are provided corresponding to the partial illumination optical systems IL2, IL4, and IL6. Similarly, the projection optical systems PL2, PL4, and PL6 (second projection optical units) are arranged in the second row with a predetermined interval in a direction orthogonal to the scanning direction.

  Here, the partial projection optical systems PL1, PL3, PL5, and PL7 constituting the first projection optical unit and the partial projection optical systems PL2, PL4, and PL6 constituting the second projection optical unit constitute the first projection optical unit. The partial projection optical systems constituting the second projection optical unit are arranged in a staggered manner between the partial projection optical systems. An off-axis alignment system 52 is disposed between the first projection optical unit and the second projection optical unit in order to align the plate P. An autofocus system 54 for adjusting the focus position is disposed between the first projection optical unit and the second projection optical unit.

  Further, a reference member 72 extending along the Y-axis direction is provided at a predetermined position at the end (−X side) in the scanning direction of the substrate stage PST, and the reference member 72 has a predetermined interval in the Y-axis direction. Are formed (see FIG. 4). In the following description, the mark 82 formed on the substrate stage PST is appropriately referred to as “substrate-side AIS mark (reference mark)”.

  As shown in FIG. 3, the formation position (height) in the Z-axis direction of the substrate-side AIS mark 82 formed on the reference member 72 is set to substantially coincide with the surface (exposure surface) of the plate P. Below the reference member 72, an AIS light receiving system (measuring device) 60 capable of receiving light that has passed through the reference member 72 is provided so as to be embedded in the substrate stage PST. The AIS light receiving system 60 includes a lens system 61 and an image sensor 62 made up of a CCD that receives light via the lens system 61. The light reception result of the AIS light receiving system 60 (image sensor 62) is output to the control device CONT.

  Further, on the substrate stage PTS, a plurality of photoelectric sensors (in this embodiment, six illuminance sensors) that measure the amount of light and the illuminance of light that has passed through the partial illumination optical systems IL1 to IL7 and the partial projection optical systems PL1 to PL7. I1 to I6) are arranged. Each of the illuminance sensors I1 to I6 includes a pinhole having a diameter of about 0.01 mm to 1 mm arranged at a substantially conjugate position with respect to the plate P, a photoelectric sensor that receives light via the pinhole, a pinhole, and a photoelectric sensor. It is comprised from the color selection filter arrange | positioned between sensors. The six illuminance sensors I1 to I6 are arranged at a substantially equal pitch in a direction crossing the scanning direction. The arrangement pitch of the illuminance sensors I1 to I6 is the same as the distance between the field stops of the partial projection optical systems PL1 to PL7. Based on the illuminance measurement values measured by the illuminance sensors I1 to I6, the illuminance of light passing through the partial illumination optical systems IL1 to IL7 and the partial projection optical systems PL1 to PL7 is adjusted using the neutral density filter 18 or the like.

  As shown in FIG. 3, the partial projection optical system PL6 includes a shift adjustment mechanism 90, two sets of catadioptric optical systems, an image plane adjustment mechanism 91, a field stop (see FIG. 2), and a scaling adjustment mechanism 92. And. The other partial projection optical systems PL1, PL2, PL3, PL4, PL5, and PL7 have the same configuration as the partial projection optical system PL6.

  The light beam that has passed through the mask M enters the shift adjustment mechanism 90. The shift adjustment mechanism 90 includes a parallel flat glass plate 90A provided rotatably around the Y axis and a parallel flat glass plate 90B provided rotatably around the X axis. The parallel flat glass plate 90A is rotated around the Y axis by a driving device 90Ad such as a motor, and the parallel flat glass plate 90B is rotated around the X axis by a driving device 90Bd such as a motor. The image of the pattern of the mask M on the plate P shifts in the X-axis direction when the plane parallel glass plate 90A rotates around the Y axis, and the plane P glass plate 90B rotates around the X axis on the plate P. The pattern image of the mask M is shifted in the Y-axis direction. The drive speeds and drive amounts of the drive devices 90Ad and 90Bd are independently controlled by the control device CONT. Each of the driving devices 90Ad and 90Bd rotates the parallel flat glass plates 90A and 90B by a predetermined amount (predetermined angle) at a predetermined speed based on the control of the control device CONT. The actual drive positions of the drive devices 90Ad and 90Bd are detected by a predetermined detection device and output to the control device CONT. The light beam transmitted through the shift adjustment mechanism 90 enters the first set of catadioptric optical system.

  The first set of catadioptric optical system forms an intermediate image of the pattern of the mask M, and includes a right-angle prism, a lens, and a concave mirror. The right-angle prism is provided so as to be rotatable around the Z axis, and is rotated around the Z axis by a driving device 93d such as a motor. As the right-angle prism rotates around the Z axis, the image of the pattern of the mask M on the plate P rotates around the Z axis. That is, the right-angle prism has a function as a rotation adjusting mechanism. The driving speed and driving amount of the driving device 93d are controlled by the control device CONT. The drive device 93d rotates the right-angle prism by a predetermined amount (predetermined angle) at a predetermined speed based on the control of the control device CONT. The actual drive position of the drive device 93d is detected by a predetermined detection device and output to the control device CONT. A field stop is disposed at the intermediate image position of the pattern formed by the first set of catadioptric optical system. The field stop sets a projection area on the plate P. In this embodiment, the field stop has a trapezoidal opening, and the projection areas 100a to 100g on the plate P are defined in a trapezoid shape by the field stop. The light beam that has passed through the field stop is incident on the second set of catadioptric optical system.

  Similar to the first set of catadioptric optical systems, the second set of catadioptric optical systems includes a right-angle prism as a rotation adjusting mechanism, a lens, and a concave mirror. The right-angle prism is rotated around the Z axis by driving of a driving device 94d such as a motor. By rotating, the image of the pattern of the mask M on the plate P is rotated around the Z axis. The driving speed and driving amount of the driving device 94d are controlled by the control device CONT, and the driving device 94d rotates the right-angle prism at a predetermined speed (predetermined angle) at a predetermined speed based on the control of the control device CONT. . The actual drive position of the drive device 94d is detected by a predetermined detection device and output to the control device CONT.

  The light beams emitted from the second catadioptric optical system pass through the scaling adjustment mechanism 92 and form an image of the pattern of the mask M on the plate P at an erecting equal magnification. The scaling adjustment mechanism 92 is configured by moving the lens in the Z-axis direction as shown in FIG. 3 or composed of three lenses (for example, a concave lens, a convex lens, and a concave lens), and is a convex lens positioned between the concave lens and the concave lens. Is moved in the Z-axis direction to adjust the magnification (scaling) of the pattern image of the mask M. In the case of FIG. 3, the convex lens is moved by the drive device 92d, and the drive device 92d is controlled by the control device CONT. The driving device 92d moves the convex lens by a predetermined amount at a predetermined speed based on the control of the control device CONT. The actual drive position of the drive device 92d is detected by a predetermined detection device and output to the control device CONT. The convex lens may be a biconvex lens or a plano-convex lens.

  On the optical path between the two sets of catadioptric optical systems, an image plane adjustment mechanism 91 that adjusts the imaging position and the tilt of the image plane of the partial projection optical system PL6 is provided. The image plane adjustment mechanism 91 is provided in the vicinity of a position where an intermediate image is formed by the first set of catadioptric optical system. That is, the image plane adjustment mechanism 91 is provided at a position that is substantially conjugate with the mask M and the plate P. The image plane adjustment mechanism 91 includes a first optical member 91A, a second optical member 91B, an air bearing (not shown) that supports the first optical member 91A and the second optical member 91B in a non-contact state, and a second optical member. Drive devices 91Ad and 91Bd for moving the first optical member 91A with respect to 91B are provided. Each of the first optical member 91A and the second optical member 91B is a glass plate that is formed in a wedge shape and is capable of transmitting the exposure light EL, and constitutes a pair of wedge-shaped optical members. The exposure light EL passes through each of the first optical member 91A and the second optical member 91B. The driving amounts and driving speeds of the driving devices 91Ad and 91Bd, that is, the relative moving amounts and moving speeds of the first optical member 91A and the second optical member 91B are controlled by the control device CONT. By moving the first optical member 91A so as to slide in the X-axis direction with respect to the second optical member 91B, the image plane position of the projection optical system PL6 moves in the Z-axis direction, and with respect to the second optical member 91B. When the first optical member 91A rotates in the θZ direction, the image plane of the partial projection optical system PL6 is inclined. The actual drive positions of the drive devices 91Ad and 91Bd are detected by a predetermined detection device and output to the control device CONT.

  The shift adjustment mechanism 90, the rotation adjustment mechanisms 93 and 94, the scaling adjustment mechanism 92, and the image plane adjustment mechanism 91 constitute an imaging characteristic correction mechanism (control device) that corrects the imaging characteristics of the projection optical system PL. . The imaging characteristic correction mechanism may be a mechanism that adjusts the internal pressure by sealing between some optical elements (lenses).

  As shown in FIG. 4, mark forming regions 70 and 71 having a plurality of marks (mark groups) are provided on both sides (± X side) in the scanning direction of the mask M. A plurality of first mask marks 80 (80a to 80h) arranged at predetermined intervals in the Y-axis direction are formed in the mark forming region 70 on the −X side. On the other hand, in the mark formation region 71 on the + X side, a plurality of second mask marks 81 (81a to 81h) arranged at predetermined intervals in the Y-axis direction are formed. In the following description, the first mask mark 80 and the second mask mark 81 formed on the mask M will be appropriately referred to as “mask side AIS marks”.

  FIG. 4 is a schematic diagram for explaining the positional relationship between the mask side AIS marks 80 and 81 and the substrate side AIS mark 82 and the partial projection optical systems PL1 to PL7. 4, each of the projection areas 100a to 100g of the partial projection optical systems PL1 to PL7 on the plate P is set to a predetermined shape (in this embodiment, a trapezoidal shape), and the projection areas 100a, 100c, 100e, 100 g and projection regions 100 b, 100 d, and 100 f are arranged to face each other in the X-axis direction. Further, the projection areas 100a to 100e are arranged in parallel so that the joints of the adjacent projection areas overlap in the Y-axis direction. Here, the joint portions are triangular regions pa to pn of the trapezoidal projection regions 100a to 100g. Then, by arranging the joints pa to pn of the projection areas 100a to 100g in parallel so as to overlap in the Y axis direction, the total width of the projection areas in the X axis direction is set to be substantially equal. By doing so, the exposure amount when scanning exposure is performed in the X-axis direction is made equal.

  As described above, by providing the overlapping region (joint portion) where the projection regions 100a to 100e by the projection optical systems PL1 to PL7 overlap each other, the change in optical aberration and the change in illuminance at the joint portion can be smoothed. The + Y direction joint pa of the projection area 100a and the −Y direction joint pn of the projection area 100g are moved stepwise in the Y-axis direction after the first scanning exposure to perform the second scanning exposure. It is overlapped when adjacent projection areas are connected. The mask side AIS marks 80a to 80h and 81a to 81h and the substrate side AIS marks 82a to 82h are arranged so as to enter the joints pa to pn of the projection areas 100a to 100g. That is, the mask side AIS marks 80a to 80h (81a to 81h) and the substrate side AIS marks 82a to 82h are formed at the same interval so as to be paired with each other.

  FIG. 5 is a diagram showing a state in which the AIS light receiving system 60 is performing AIS mark detection. As shown in FIG. 5, the control device CONT uses a so-called through-the-lens (TTL) method to connect a mask side AIS mark 80 (81) and a substrate side AIS mark 82 with an AIS light receiving system 60 (imaging device 62). Then, the relative position between the mask M and the substrate stage PST is obtained based on the detection result. Specifically, the control device CONT moves the mask stage MST and the substrate stage PST so that the image of the mask side AIS mark 80 (81) and the image of the substrate side AIS mark 82 coincide with each other by the image sensor 62, and illumination The mask side AIS mark 80 (81) is illuminated by the optical system IL. The illumination light (exposure light) that has passed through the mask M passes through the projection optical system PL and also passes through the substrate-side AIS mark 82 and is guided to the image sensor 62. The control device CONT measures the relative positions (displacement amounts) of the mask side AIS mark 80 (81) and the substrate side AIS mark 82 via the projection optical systems PL1 to PL7, thereby connecting each connection of the projection optical systems PL1 to PL7. Measure image characteristics (shift, scaling, rotation). The control device CONT obtains a correction amount based on the obtained measurement result of the imaging characteristic so that the imaging characteristics of the projection optical systems PL1 to PL7 are within the accuracy guarantee range, and the correction mechanism based on the obtained correction amount. 90, 91, 92, 93, and 94 are driven to correct the imaging characteristics.

  FIG. 5 shows a state in which the mask side AIS mark 80 and the substrate side AIS mark 82 are simultaneously detected. By moving the mask stage MST, the mask side AIS mark 81, the substrate side AIS mark 82, Can be measured simultaneously. Then, based on the measurement results for each of the mask side AIS marks 80 and 81, the control device CONT sets the displacement of the mask M with respect to a desired position on the mask stage MST (position displacement in the θZ direction) and the expansion amount of the mask M. You can ask for information about.

  Next, the rotation measurement of the mask M and the running measurement of the mask stage MST, the calculation of the rotation correction value of the mask M and the running correction value of the mask stage MST will be described with reference to the flowchart shown in FIG. In the flowchart shown in FIG. 6, the partial projection optical systems PL1, PL3, PL5, and PL7 (first projection optical unit) are “M1 column”, and the partial projection optical systems PL2, PL4, and PL6 (second projection optical unit) are used. Are described as “M2 row”, the mask side AIS mark 80 as “BCHK1 mark”, and the mask side AIS mark 81 as “BCHK2 mark”.

  First, the mask M is placed on the mask holder on the mask stage MST by a mask loader (not shown). Then, a mask pre-alignment process is performed on the mask M placed on the mask stage MST. That is, the control device CONT uses the first projection optical unit to measure the relative position between the substrate side AIS mark 82 and the mask side AIS mark 80 with the AIS light receiving system (measuring device) 60, and the X direction of the mask M, The position in the Y direction and the amount of rotation are obtained. At this time, in order to eliminate errors in rotation and magnification of each partial projection optical system PL1, PL3, PL5, PL7, a mask side AIS mark 80 is arranged at the center of the visual field of each partial projection optical system PL1, PL3, PL5, PL7. To measure. In this measurement, the substrate stage PST is moved in the Y direction so that the substrate-side AIS mark 82 is positioned at the center of the visual field of each partial projection optical system PL1, PL3, PL5, PL7. At this time, the drive devices 90Ad, 90Bd, 91Ad, 91Bd, 92d, 93d, and 94d of the correction mechanism included in the partial projection optical systems PL1, PL3, PL5, and PL7 are controlled so that the drive positions are located at the origins. . Here, the origin is a position aligned in exposure using the reference mask, but it is a rough position because exposure light irradiation and fluctuations with time are added.

  Next, the rotation amount of the mask M and the running measurement of the mask stage MST are performed. First, the control device CONT moves each of the mask stage MST and the substrate stage PST to the mark measurement position (step S20). Specifically, in the control device CONT, the mask side AIS mark (first mask mark) 80 and the substrate side AIS mark 82 have projection areas 100a, 100c, 100e, 100g of the partial projection optical systems PL1, PL3, PL5, PL7. The mask stage MST and the substrate stage PST are moved to positions that overlap each other (mark measurement position). At this time, the marks 80 and 82 are arranged at the joints pa, pb, pe, pf, pi, pj, pm, and pn.

  Next, the control device CONT uses the AIS light receiving system 60 to measure a positional deviation amount that is a relative position (first relative position) between the mask side AIS mark 80 and the substrate side AIS mark 82 (step S21, first step). 1 measurement process). That is, the mask side AIS mark 80 is imaged on the substrate side AIS mark 82 through the partial projection optical systems PL1, PL3, PL5, and PL7 by the exposure light EL from the illumination optical system IL, and this imaged mask side The projected image of the AIS mark 80 and the substrate side AIS mark 82 are imaged by the AIS light receiving system 60 (image sensor 62), and the relative position between the mask side AIS mark 80 and the substrate side AIS mark 82 is measured. The measurement result of the AIS light receiving system 60 is output to the control device CONT.

  Next, the control device CONT moves each of the mask stage MST and the substrate stage PST to the next mark measurement position (step S22). Specifically, in the control device CONT, the mask side AIS mark (first mask mark) 80 and the substrate side AIS mark 82 are overlapped in the projection areas 100b, 100d, 100f of the partial projection optical systems PL2, PL4, PL6. The mask stage MST and the substrate stage PST are moved to (mark measurement position). At this time, the marks 80 and 82 are arranged at the joints pc, pd, pg, ph, pk, and pl.

  Next, the control device CONT uses the AIS light receiving system 60 to measure the amount of displacement, which is the relative position (first relative position) between the mask side AIS mark 80 and the substrate side AIS mark 82 (step S23, first). 2 measurement process). That is, the mask side AIS mark 80 is imaged on the substrate side AIS mark 82 through the partial projection optical systems PL2, PL4, PL6 by the exposure light EL from the illumination optical system IL, and the imaged mask side AIS mark is formed. The projected image 80 and the substrate side AIS mark 82 are imaged by the AIS light receiving system 60 (image sensor 62), and the relative position between the mask side AIS mark 80 and the substrate side AIS mark 82 is measured. The measurement result of the AIS light receiving system 60 is output to the control device CONT.

  Next, the control device CONT moves each of the mask stage MST and the substrate stage PST to the next mark measurement position (step S24). Specifically, in the control device CONT, the mask side AIS mark (second mask mark) 81 and the substrate side AIS mark 82 have projection areas 100a, 100c, 100e, 100g of the partial projection optical systems PL1, PL3, PL5, PL7. The mask stage MST and the substrate stage PST are moved to positions that overlap each other (mark measurement position). At this time, the marks 81 and 82 are arranged at the joints pa, pb, pe, pf, pi, pj, pm, and pn.

  Next, the control device CONT uses the AIS light receiving system 60 to measure the amount of displacement, which is the relative position (second relative position) between the mask side AIS mark 81 and the substrate side AIS mark 82 (step S25, second). 3 measurement steps). That is, the mask side AIS mark 81 is imaged on the substrate side AIS mark 82 via the partial projection optical systems PL1, PL3, PL5, and PL7 by the exposure light EL from the illumination optical system IL, and this imaged mask side The projected image of the AIS mark 81 and the substrate side AIS mark 82 are imaged by the AIS light receiving system 60 (image sensor 62), and the relative position between the mask side AIS mark 81 and the substrate side AIS mark 82 is measured. The measurement result of the AIS light receiving system 60 is output to the control device CONT.

  Next, the control device CONT moves each of the mask stage MST and the substrate stage PST to the next mark measurement position (step S26). Specifically, in the control device CONT, the mask side AIS mark (second mask mark) 81 and the substrate side AIS mark 82 are overlapped in the projection areas 100b, 100d, 100f of the partial projection optical systems PL2, PL4, PL6. The mask stage MST and the substrate stage PST are moved to (mark measurement position). At this time, the marks 81 and 82 are arranged at the joints pc, pd, pg, ph, pk, and pl.

  Next, the control device CONT uses the AIS light receiving system 60 to measure a positional deviation amount that is a relative position (second relative position) between the mask side AIS mark 81 and the substrate side AIS mark 82 (step S27, second one). 4 measurement steps). That is, the mask side AIS mark 81 is imaged on the substrate side AIS mark 82 through the partial projection optical systems PL2, PL4, PL6 by the exposure light EL from the illumination optical system IL, and the imaged mask side AIS mark is formed. The projected image 81 and the substrate side AIS mark 82 are imaged by the AIS light receiving system 60 (imaging device 62), and the relative position between the mask side AIS mark 81 and the substrate side AIS mark 82 is measured. The measurement result of the AIS light receiving system 60 is output to the control device CONT.

  In steps S21, S23, S25, and S27, the partial projection optical system PL1 is driven by the correction mechanism driving devices 90Ad, 90Bd, 91Ad, 91Bd, 92d, 93d, and 94d included in the partial projection optical systems PL1, PL3, PL5, and PL7. , PL3, PL5, and PL7 are measured in a state before alignment.

Next, the control device CONT determines the relative position between the mask side AIS mark 80 and the substrate side AIS mark 82 in the partial projection optical systems PL1, PL3, PL5, and PL7 measured in step S21, and the part measured in step S23. Relative position of mask side AIS mark 80 and substrate side AIS mark 82 in projection optical systems PL2, PL4, PL6, mask side AIS mark 81 in partial projection optical systems PL1, PL3, PL5, PL7 measured in step S25 The mask stage MST is based on the relative position between the substrate side AIS mark 82 and the relative position between the mask side AIS mark 81 and the substrate side AIS mark 82 in the partial projection optical systems PL2, PL4, PL6 measured in step S27. In the Y direction of the mask stage and the mask stage rotation correction value That calculates the second order running correction value (step S28, the correction value calculating step). That is, using the measured values measured in step S21, step S23, step S25, and step S27, the running correction value y in the Y direction of the mask stage MST y = AX ² + BX + C and the coefficients A, B, and C are corrected. An offset α for fitting to the value is calculated.

  Specifically, the average value (hereinafter referred to as B1M1 average value) of the measurement values of the relative positions in the Y direction between the mask side AIS marks 80a to 80h and the substrate side AIS marks 82a to 82h measured in step S21 is calculated. . Similarly, the average value (hereinafter referred to as B1M2 average value) of the measured values of the relative positions in the Y direction of the mask side AIS marks 80a to 80h and the substrate side AIS marks 82a to 82h measured in step S23, measured in step S25. The average value (hereinafter referred to as B2M1 average value) of the measured values of the relative positions in the Y direction between the mask side AIS marks 81a to 81h and the substrate side AIS marks 82a to 82h, the mask side AIS mark 81a measured in step S27. The average value (hereinafter referred to as B2M2 average value) of the measured values of the relative positions in the Y direction between ˜81h and the substrate side AIS marks 82a to 82h is calculated.

  Note that the X coordinate of the mask stage MST at the time of measurement in step S21 is X11, the X coordinate of the mask stage MST at the time of measurement in step S23 is X12, the X coordinate of the mask stage MST at the time of measurement in step S25 is X21, and in step S27. The X coordinate of the mask stage MST at the time of measurement is set to X22.

  Here, in order to use the running of the mask stage MST between the first projection optical unit and the second projection optical unit on the mask side AIS mark 80 side as a reference, the B1M1 average value is set to 0 (zero) (hereinafter referred to as B1M1). The B1M2 average value is 0 (zero) (hereinafter referred to as the B1M2 reference value). In this case, the B2M1 average value is a B2M1 reference value (B2M1 average value−B1M1 average value), and the B2M2 average value is a B2M2 reference value (B2M2 average value−B1M2 average value).

FIG. 7 is a graph showing the B1M1 reference value 200, the B1M2 reference value 201, the B2M1 reference value 202, and the B2M2 reference value 202. As shown in FIG. 7, the B2M1 reference value 202 and the B2M2 reference value 203 are included in order to fit the B2M1 reference value 202 and the B2M2 reference value 203 to the running correction value y = AX ² + BX + C in the Y direction of the mask stage MST. Α, which is the offset amount of the rotational component of the mask M with respect to the mask stage MST, is added to the B2M1 reference value 202 and the B2M2 reference value 203 (see FIG. 7).

  When the offset α is added, the values in the X direction (mask stage coordinates) and the values in the Y direction of the B1M1 reference value 200, the B1M2 reference value 201, the B2M1 reference value 202, and the B2M2 reference value 203 are as follows.

B1M1 reference value X = X11 Y = 0
B1M2 reference value X = X12 Y = 0
B2M1 reference value X = X21 Y = B2M1 average value−B1M1 average value + α
B2M2 reference value X = X22 Y = B2M2 average value−B1M2 average value + α
Next, B1M1 reference value, B1M2 reference value, B2M1 reference value, X of B2M2 reference values, respectively substituted into the correction value ^{y =} AX 2 + BX + C ran the value of Y, running correction value ^{y =} AX 2 + BX + coefficient C A, B, C and offset α are calculated. The rotation amount θ of the mask M with respect to the mask stage MST is θ = α / (X11−X21), and can be calculated by substituting the calculated offset α, and is based on the rotation amount θ of the mask M. Thus, the rotation correction value of the mask M can be calculated.

  Next, the control device CONT controls the running position of the mask stage MST via the mask stage drive unit MSTD based on the rotation correction value of the mask M calculated in step S28 and the running correction value of the mask stage MST in the Y direction. The mask stage MST is scanned while performing (scanning process).

  According to the scanning projection exposure apparatus of this embodiment, the mask rotation correction value with respect to the mask stage and the second or higher-order running correction value in the non-scanning direction of the mask stage can be separately calculated and measured. It can calculate simultaneously based on the measured value measured by the means. Therefore, even when the mask stage is deformed by heat or the like, and the position of the mask stage running in the non-scanning direction changes non-linearly, the mask stage can be accurately corrected for running in the non-scanning direction. The exposure can be performed with high accuracy.

  In the above-described embodiment, the mask stage running is corrected by the mask stage control. However, the substrate stage running control is corrected based on the measurement result of the mask stage running. May be.

  Further, in the above-described embodiment, the mask side AIS marks 80 and 81 arranged at both ends of the mask are measured. However, when a two-divided mask is used, it is further provided at the center of the mask. Since the mask mark can be formed, by measuring this mask mark as well, it becomes possible to perform correction using function equations up to the fifth order equation. Further, higher-order correction can be performed by using a test mask having a larger number of mask marks in the scanning direction. The exposure apparatus of the present invention is particularly effective for a photosensitive substrate having an outer diameter of 500 mm or more. When manufacturing a high-definition pattern or a large device, accuracy of running and straightness is required, and accuracy of straightness is required even when a plurality of projection optical systems are used. Therefore, the present invention is effective. .

  In the above-described embodiment, the average value of the measurement values of each mask mark is used as the measurement value in the Y direction of the mask mark for the purpose of improving the measurement accuracy by performing the averaging process. A measurement value in the Y direction at one joint may be used.

  Further, the use of the exposure apparatus EX of the above embodiment is not limited to a liquid crystal exposure apparatus that exposes a liquid crystal display element pattern on a square glass plate, for example, an exposure apparatus for semiconductor manufacturing, It can be widely applied to an exposure apparatus for manufacturing a thin film magnetic head.

The light source of the exposure apparatus EX of the present embodiment is not only g-line (436 nm), h-line (405 nm), i-line (365 nm), but also KrF excimer laser (248 nm), ArF excimer laser (193 nm), and F ₂ laser. (157 nm) can also be used.

Further, the magnification of the projection optical system PL may be any of a reduction system and an enlargement system as well as an equal magnification system. As the projection optical system PL, when using far ultraviolet rays such as an excimer laser, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material, and when using an F ₂ laser or X-ray, a catadioptric system or a refractive system The optical system.

  When a linear motor is used for the substrate stage PST and the mask stage MST, either an air levitation type using an air bearing or a magnetic levitation type using a Lorentz force or a reactance force may be used. The stage may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  When a flat motor is used as the stage drive device, either the magnet unit (permanent magnet) or the armature unit is connected to the stage, and the other of the magnet unit and armature unit is connected to the moving surface side (base) of the stage. Should be provided.

  The reaction force generated by the movement of the substrate stage PST may be released mechanically to the floor (ground) using a frame member as described in JP-A-8-166475. The present invention can also be applied to an exposure apparatus having such a structure.

  The reaction force generated by the movement of the mask stage MST may be released mechanically to the floor (ground) using a frame member as described in JP-A-8-330224. The present invention can also be applied to an exposure apparatus having such a structure.

  As described above, the exposure apparatus according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  In the exposure apparatus according to the above-described embodiment, the illumination optical system illuminates the reticle (mask), and the projection optical system is used to expose the transfer pattern formed on the mask onto the photosensitive substrate (wafer). Microdevices (semiconductor elements, imaging elements, liquid crystal display elements, thin film magnetic heads, etc.) can be manufactured. FIG. 8 is a flowchart of an example of a technique for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus according to the above-described embodiment. The description will be given with reference.

  First, in step S301 in FIG. 8, a metal film is deposited on one lot of wafers. In the next step S302, a photoresist is applied on the metal film on the wafer of one lot. Thereafter, in step S303, using the exposure apparatus according to the above-described embodiment, the pattern image on the mask is sequentially exposed and transferred to each shot area on the wafer of one lot via the projection optical system. Thereafter, in step S304, the photoresist on the one lot of wafers is developed, and in step S305, the resist pattern is etched on the one lot of wafers to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each wafer.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the above-described microdevice manufacturing method, since exposure is performed using the exposure apparatus according to the above-described embodiment, microdevices having extremely fine circuit patterns can be manufactured with high throughput and high accuracy. In steps S301 to S305, a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and exposure, development, and etching processes are performed. Prior to these processes, on the wafer. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the exposure apparatus according to the above-described embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 9, in the pattern forming step S401, a so-called photolithographic step is performed in which the exposure pattern according to the above-described embodiment is used to transfer and expose the mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). Is done. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, since exposure is performed using the exposure apparatus according to the above-described embodiment, a semiconductor device having an extremely fine circuit pattern can be manufactured with high throughput and high accuracy. it can.

It is a perspective view which shows schematic structure of the scanning projection light apparatus concerning this Embodiment. It is a figure which shows the structure of the partial illumination optical system concerning this embodiment, and a partial projection optical system. It is a figure which shows schematic structure of the scanning projection light apparatus concerning this embodiment. It is a schematic diagram which shows the positional relationship of the mark group provided in the mask and substrate stage concerning this embodiment, and a projection area | region. It is a schematic diagram which shows the mark measurement operation | movement concerning this embodiment. 6 is a flowchart for explaining a mask stage running correction method for calculating a mask rotation correction amount and a mask stage running correction value in a non-scanning direction according to this embodiment. It is a figure for demonstrating the method of calculating | requiring the running correction value of a mask stage based on the measured value concerning this embodiment. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 2 ... Light source, 4 ... Elliptic mirror, 6 ... Dichroic mirror, 8 ... Collimating lens, 10a, 10b ... Wavelength selection filter, 12 ... Condensing lens, 14 ... Light guide fiber, 16b ... Collimating lens, 18 ... Dimming filter mechanism 22b ... fly eye lens, 24b ... condenser lens, IL1-IL7 ... partial illumination optical system, PL1-PL7 ... partial projection optical system, I1-I6 ... illuminance sensor, M ... mask, P ... plate, 50 ... moving mirror, 52 ... Alignment system, 54 ... Auto focus system, CONT ... Control device, 80, 81 ... Mask side AIS mark, 82 ... Substrate side AIS mark.

Claims (15)

A mask stage for placing and scanning a mask; and a substrate stage for placing and scanning a substrate. The mask stage and the substrate stage are connected to the first partial projection optical system and the second stage. In a scanning projection exposure apparatus for projecting and exposing the pattern of the mask onto the substrate by relatively moving relative to a projection optical system including a partial projection optical system,
A reference mark arranged on the substrate stage;
A relative position between the reference mark and the first mask mark arranged on the mask is set to two second positions through the first partial projection optical system and the second partial projection optical system of the projection optical system, respectively. The relative position between the reference mark and the second mask mark arranged at a predetermined distance with respect to the direction parallel to the synchronous movement direction with respect to the position of the first mask mark is measured as one relative position. A measuring device that measures the second relative position via one of the first partial projection optical system and the second partial projection optical system;
Correction for obtaining a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage by a function equation of quadratic or higher obtained from the two first relative positions and one second relative position measured by the measuring device. A value calculation device;
With
The scanning projection exposure apparatus, wherein the first partial projection optical system and the second partial projection optical system are arranged at a predetermined distance with respect to a direction parallel to the synchronous movement direction. The measuring device measures the relative position between the reference mark and the first mask mark via the first partial projection optical system, and the relative position between the reference mark and the first mask mark. Two first relative positions are obtained by measurement through two partial projection optical systems, and the first partial projection optical system has a relative position between the reference mark and the second mask mark on the mask. And the two second relative positions by measurement via the second partial projection optical system, and the measurement of the relative position between the reference mark and the second mask mark,
The correction value calculation device obtains a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage by using a quadratic or higher-order function expression obtained from the two first relative positions and the two second relative positions. 2. A scanning projection exposure apparatus according to claim 1, wherein: The said 1st mask mark and the said 2nd mask mark contain the some mark arrange | positioned discretely along the direction orthogonal to the said synchronous movement direction, respectively. Scanning projection exposure apparatus. A first unit including a plurality of partial projection optical systems including the first partial projection optical system and disposed along a direction orthogonal to the synchronous movement direction;
A second unit having a plurality of partial projection optical systems arranged along a direction orthogonal to the synchronous movement direction, including the second partial projection optical system;
The scanning projection exposure apparatus according to any one of claims 1 to 3, further comprising: 5. The correction value calculating device calculates a mask rotation correction value with respect to the mask stage and a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage. The scanning projection exposure apparatus according to any one of the above. 6. The correction value calculation apparatus calculates a rotation correction value of a mask relative to the mask stage and a second or higher-order running correction value in a direction orthogonal to the synchronous movement direction of the mask stage. Scanning projection exposure apparatus.   The scanning projection exposure according to any one of claims 1 to 6, wherein the mask stage or the substrate stage is synchronously moved based on a correction value calculated by the correction value calculation device. apparatus. A mask stage for placing and scanning a mask; and a substrate stage for placing and scanning a substrate. The mask stage and the substrate stage are connected to the first partial projection optical system and the second stage. In the running correction method of the mask stage of the scanning type projection exposure apparatus that projects and exposes the pattern of the mask onto the substrate by relatively moving relative to the projection optical system including the partial projection optical system,
The first portion is arranged such that a relative position between a reference mark arranged on the substrate stage and a first mask mark arranged on the mask is separated by a predetermined distance in a direction parallel to the synchronous movement direction. A first measurement step of measuring as two first relative positions via the projection optical system and the second partial projection optical system, respectively;
The relative position between the reference mark and the second mask mark arranged at a predetermined distance with respect to a direction parallel to the synchronous movement direction, which is a position different from the position of the first mask mark on the mask, A second measurement step of measuring as a second relative position via one of the first partial projection optical system and the second partial projection optical system;
The synchronous movement direction of the mask stage by a quadratic or higher-order functional expression obtained from the two first relative positions measured in the first measurement step and the one second relative position measured in the second measurement step. A correction value calculation step of calculating a running correction value in a direction orthogonal to
A scanning step of synchronously moving the mask stage or the substrate stage based on the correction value calculated by the correction value calculating step;
A mask stage running correction method comprising: In the first measurement step, the relative position between the reference mark and the first mask mark is measured via the first partial projection optical system, and the relative position between the reference mark and the first mask mark. The two first relative positions are obtained by measurement via the second partial projection optical system, and in the second measurement step, the relative position between the reference mark and the second mask mark on the mask is determined. Two second relative positions measured by the first partial projection optical system and measured by the second partial projection optical system of the relative positions of the reference mark and the second mask mark; Seeking
In the correction value calculation step, a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage is obtained by a quadratic or higher-order function expression obtained from the two first relative positions and the two second relative positions. The mask stage running correction method according to claim 8. The said 1st mask mark and the said 2nd mask mark contain the some mark arrange | positioned discretely along the direction orthogonal to the said synchronous movement direction, respectively. The mask stage running correction method. A first unit having a plurality of partial projection optical systems including the first partial projection optical system and disposed along a direction orthogonal to the synchronous movement direction; and the second partial projection optical system. A second unit having a plurality of partial projection optical systems arranged along a direction orthogonal to the moving direction;
Each of the plurality of partial projection optical systems is configured to measure a relative position between the reference mark and the plurality of marks arranged along a direction orthogonal to the synchronous movement direction. The mask stage running correction method according to claim 10. 9. The correction value calculating step includes a step of calculating a mask rotation correction value with respect to the mask stage and a running correction value in a direction orthogonal to the synchronous movement direction of the mask stage. Item 12. The running correction method of the mask stage according to any one of Items 11. The correction value calculating step includes a step of calculating a mask rotation correction value with respect to the mask stage and a second or higher-order running correction value in a direction orthogonal to the synchronous movement direction of the mask stage. Item 13. A mask stage running correction method according to Item 12. An exposure process for exposing a pattern of a mask onto a photosensitive substrate using the scanning projection exposure apparatus according to any one of claims 1 to 7,
A developing step of developing the photosensitive substrate exposed by the exposing step;
A method for manufacturing a microdevice, comprising: An exposure step of exposing a mask pattern onto a photosensitive substrate using a scanning projection exposure apparatus corrected by the mask stage running correction method according to any one of claims 8 to 13.
A developing step of developing the photosensitive substrate exposed by the exposing step;
A method for manufacturing a microdevice, comprising:

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