JP2000228344A - Scanning projection aligner and device-manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve overlay precision. SOLUTION: In a manufacturing method, an original and a substrate are controlled with respect to a projection optical system, so that the original and the substrate are positioned at a specific target position successively given via a profiler 307, thus performing the scanning exposure of the pattern of the substrate to exposure shot on the original, while scanning. In this case, each target position of the original or the substrate is corrected based on specific correction data (a direction overlay correction table) which is specified according to a scanning exposure position in the exposure shot by a target position correction means 308.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure apparatus having means for generating a dynamic target value of a substrate stage or original stage control system for realizing synchronous exposure scanning with higher accuracy, and using the same. In particular, the present invention relates to a device manufacturing method capable of correcting in-shot distortion.

[0002]

2. Description of the Related Art For example, in an example disclosed in Japanese Patent Application Laid-Open No. 10-106933, a part of a pattern of an original is projected onto a substrate via a projection optical system, and the projection is projected onto an optical axis of the projection optical system. In a scanning exposure apparatus that exposes the pattern of the original onto the substrate by vertically scanning the original and the substrate together, a target value for all axes of a substrate stage that holds the substrate and / or an original stage that holds the original A method of storing a correction amount by a polynomial in which a position coordinate on a scanning axis of the substrate stage or the original stage in a coordinate system defined with the center of an exposure shot on the substrate or the center of the pattern of the original as an origin is a variable. It is shown.

[0003]

However, the overlay (superposition) accuracy within a shot when an exposure apparatus is used for mixing and matching between different models has become severer with the miniaturization of IC circuits. For this reason, a function capable of faithfully transferring a reticle pattern onto a wafer is not enough, and it is necessary to deform and transfer a reticle pattern image in accordance with in-shot distortion of a layer already exposed on the wafer. ing.

[0004] Further, as an error due to factors of the exposure apparatus,
The time constant at which the relative distance between the mirror surface of the laser interferometer on the wafer stage or reticle stage and the wafer chuck or reticle suction chuck is deformed by the acceleration during scan exposure applied to the wafer stage or reticle stage, and the deformation is reduced. Is long, there is a problem that an alignment error depending on the scanning direction occurs.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a scanning exposure apparatus and a device manufacturing method capable of realizing synchronous exposure scanning with higher accuracy.

[0006]

According to the present invention, in order to attain the above object, the original plate and the substrate are controlled so as to be sequentially positioned at a predetermined target position with respect to a projection optical system, so that the original plate and the substrate are scanned and moved while being moved. In a scanning exposure apparatus or a device manufacturing method for scanning and exposing a pattern to an exposure shot on the original, each target position of the original or substrate in the control is determined by a target position correcting means according to a scanning exposure position in the exposure shot. The correction is performed based on the given predetermined correction data.

[0007] According to this, according to various exposure processing conditions such as exposure by mix-and-match or the like, optimum data capable of correcting an overlay error is selected and used as correction data. And the overlay accuracy is improved.

[0008]

In a preferred embodiment of the present invention, the target position correcting means corrects the target positions in all the control directions to be controlled by the control, and the correction data is the center of the exposure shot. Are obtained from a table of correction data for all of the control directions expressed with the base point as a base point.

This table has different correction data depending on the scanning direction of the scanning exposure, and a plurality of tables are prepared according to the scanning speed of the scanning exposure. In addition, the correction data has data of an origin and a table arrangement interval for associating with each scanning exposure position in an exposure shot, and these can be arbitrarily designated.

This table is a set of a finite number of discrete correction data, and the target position correction means obtains a correction amount between each correction data by interpolation calculation, and based on this, calculates a correction amount of each target position. Make corrections. Further, the table may be obtained by synthesizing a plurality of similar tables existing for the same correction target.

In a more specific embodiment, the table is defined in six axes according to a position in a scanning axis direction in a coordinate system in a shot defined with the center of an exposure shot on a substrate as an origin. A wafer stage target value correction table is provided, and the correction data recorded in the table is read out according to the scan position in the shot where the center of the exposure slit is located during the scan exposure, and the target position of the wafer stage is sequentially corrected. By doing so, the overlay accuracy within the shot is improved. In addition, by preparing the table according to the scanning speed (or the maximum acceleration before scanning) and switching and using the correction table according to the scanning speed, an arrangement error generated due to a device factor is reduced. I have.

[0012]

FIG. 1 shows a scanning exposure apparatus according to an embodiment of the present invention. As shown in the figure, in this apparatus, the exposure light from the light source unit by the excimer laser reaches the slit 4 via the first condenser lens group 2. Slit 4
Focuses the luminous flux of the exposure light to a thin sheet-like beam of about 7 mm in the Z direction, and adjusts so that the illuminance integrated in the Z-axis direction with respect to an axis (X-axis) perpendicular to the paper surface is uniform. It is possible. A masking blade 1 includes a reticle stage 5 and a wafer stage 16.
When scanning and exposing, the reticle 6 moves following the edge of the pattern drawing angle of view. Masking blade 1
Prevents the exposure light from being projected onto the wafer 21 by irradiating a portion that is not shielded by the reticle pattern while decelerating through the pattern area of the reticle 6. The exposure light having passed through the masking blade 1 is applied to the reticle 6 on the reticle stage 5 via the second condenser lens group 3. Further, the exposure light that has passed through the reticle pattern forms an image forming surface of the reticle pattern near the surface of the wafer 21 via the projection lens 11.

Reference numeral 12 denotes an NA provided in the projection lens 11.
The aperture is used to change the NA when changing the illumination mode at the time of exposure. Reference numeral 8 denotes a TTL scope movable in a one-dimensional direction, and X and X of alignment marks drawn on the reticle 6 and the reference mark 19 on the wafer 21 or the wafer stage 16 based on the absolute position of the TTL scope.
The position in the Y and Z axis directions can be measured. Reference numeral 7 denotes a relay lens for adjusting the focus of the TTL scope 8, and the position of the detection target in the focus (Z) direction can be determined by referring to the relay lens position where the focus of the alignment mark is most focused. Can be measured. In the figure, two TTL scopes 8 are arranged shifted in the Y direction, but one TTL scope 8 is further shifted in the X direction. With this arrangement, the inclination in the ωx and ωy directions between the alignment mark on the reticle and the alignment mark on the wafer or the wafer reference mark 19 can be measured. The TTL scope 8 shown in the figure can be driven toward the center of the angle of view (in the Y direction).

The reticle stage 5 is controlled by three reticle laser interferometers 10 in the X, Y and θ directions. Although only one laser interferometer 10 is shown in the drawing, two laser interferometers 10 are actually arranged in the Y direction and one laser interferometer 10 is arranged perpendicular to the paper surface. The reticle stage 5 is movable in X, Y, and θ directions on a guide provided on the lens barrel base 13. In particular, in the Y direction, it can be driven over a long stroke to scan synchronously with the wafer stage 16.
The movement in the X and θ directions is used for a minute drive for eliminating a suction error of the reticle 6 to the reticle stage 5. The reaction force at the time of driving the reticle 6 is released to a reaction force absorbing device (not shown) rigidly connected to the base plate 18. do not do. A reticle reference plate 9 is mounted on the reticle stage 5, and marks that can be observed by the TTL scope 8 are drawn on the reticle reference plate 9.

Numeral 14 denotes a focus detector, which is a Z, ωx, ω of the wafer 21 or the reference mark 19 mounted on the wafer stage 16 without passing through the projection lens 11.
The position in the y direction can be measured at high speed regardless of the presence or absence of the mark. Focus measurement when performing exposure by synchronously scanning the reticle stage 5 and the wafer stage 16 is performed using the focus detector 14.
The focus measuring device 14 measures the reference mark 19 on the wafer stage 16 positioned at the same target value with the TTL scope 8 and measures the measured value with the focus measuring device 14 in order to guarantee long-term stability of the measurement accuracy. The self-calibration is performed by comparing with.

Reference numeral 20 denotes an off-axis scope, which has a focus measurement function for a single eye and an alignment error measurement function in the XY directions. When aligning a wafer in a normal mass production job, the off-axis scope 20 performs global tilt measurement and global alignment measurement. The reflection of the global tilt correction amount and the global alignment correction amount is collectively performed when the wafer stage 16 is step-moved so that each exposure area on the wafer is below the projection lens 11.

The lens barrel base 13 is a base on which a high-precision measuring instrument of the exposure apparatus is mounted. The lens barrel base 13 is positioned in such a manner as to float slightly above a base plate 18 placed directly on the floor. The focus detector 14 and the TTL scope 8 described above are used for the lens barrel base 1.
As a result, the measurement values of these measuring instruments measure the relative distance from the barrel base 13 as a result.

Reference numeral 15 denotes an interferometer between base plates,
The relative position between the stage and the stage base 17 is measured. Control is performed so that the sum of the inter-platen interferometer 15 and the three-axis Z sensor (not shown) mounted on the wafer stage 16 matches the target value commanded from the upper sequence (see FIG. 6). For this reason, the wafer 21 on the wafer stage 16 is maintained so as to be positioned at the target value specified from the upper sequence in the focus direction with respect to the lens barrel base 13. Reference numeral 22 denotes a wafer stage interferometer, three of which are arranged similarly to the case of the reticle stage 5, and are used for controlling the wafer stage 16 in the X, Y and θ directions.

The stage base 17 is positioned so as to float slightly from the base plate 18 in the same manner as the lens barrel base 13. The stage base 17 is the base plate 1 from the floor.
The function of removing the vibration transmitted to the wafer stage 16 via 8 and the function of smoothing the reaction force when the wafer stage 16 is driven to escape to the base plate 18.

The wafer stage 16 includes a stage base 17
It floats on a very small distance. The present invention is applied to a normal line of a trajectory plane (hereinafter referred to as a stage running plane) of an arbitrary point on the wafer chuck surface drawn when the target value of the Z axis is fixed and the positions of the X and Y axes are changed. Otherwise, it is parallel to the normal of the stage surface 17. When the present invention is applied, the normal angle of the stage running surface can be set to any angle relative to the normal line of the stage surface 17.

FIG. 2 shows a trajectory b of the wafer stage 16 when scanning exposure is performed without correcting the target position.
FIG. 9 is a diagram showing a trajectory a of an exposure slit as viewed from above the wafer 21 when a correction is made in a direction perpendicular to the scanning direction on the wafer surface using a table for correcting an overlay error according to the present invention. . When correcting the target position, the shot outline 201 is parallel to the locus a of the exposure slit.
b also changes to 201a. The overlay error correction table defines the amount by which the trajectory is changed with respect to the trajectory b when no correction is performed, and as a result, generates the trajectory a of the exposure slit.

FIG. 3 shows a control operation unit for controlling the wafer stage 16. Wafer stage interferometer 22,
The data of the Z sensor mounted on the inter-platen interferometer 15 and the wafer stage 16 is taken into the sensor signal input section 301. This signal is passed to a correction processing unit 302 whose details are shown in FIG. 4, where correction processing such as Abbe correction and orthogonality correction is performed, and as a result, data representing the current position of each axis is obtained. Reference numeral 307 denotes a profiler for moving the wafer stage 16 by gradually changing a stepwise changing control target value instructed from the upper sequence so that an acceleration equal to or more than a predetermined value specified for the wafer stage 16 is not applied. It is for. Reference numeral 308 denotes an overlay correction unit, which is described in the sequential logical target values of the wafer stage 16 obtained from the profiler 307, the coordinates of the center of the exposure slit from the center of the exposure shot in the exposure shot, the scan direction, and the direction overlay table. The correction amount is derived from the corrected table, and the result is output to the difference calculator 303. The difference calculator 303 compares the target value, which is the sum of the output of the profiler 307 and the output result of the overlay correction unit 308, with the output of the correction processing unit 302, and calculates the amount of deviation from the target value that changes sequentially. Then, the deviation amount is sent to the servo compensator 304. Servo compensator 304 is used for wafer stage 1
The servo compensator 304 is provided with, for example, functions of a PID controller and a notch filter. The control amount that has passed through the servo compensator 304 is distributed by the thrust distributor 305 to the operation amount of the actuator of the actually arranged wafer stage, and becomes the drive output 306.

FIG. 4 shows the details of the correction processing section 302 in FIG. This figure shows the wafer stage interferometer 2 in FIG.
2. Express the flow from the output from the Z-sensor mounted on the inter-platen interferometer 15 and the wafer stage 16 to the data processing system reading the data and converting it to the current position in the mode-separated abstract coordinate system. I have. 401 to 403 are measured values of each axis from the wafer stage interferometer 22;
6 is a measured value from the Z sensor of the wafer stage 16, 40
7 to 409 are measurement values from the inter-platen interferometer 15. 4
Reference numerals 10a and 410b denote environmental correction units for performing, on the measured values from the interferometers 22 and 15, environmental correction necessary for the wavelength to fluctuate under the influence of the atmospheric pressure, temperature, and humidity. Instead of this, a device that multiplies the measured value by the variation magnification with respect to the reference length using a wave length tracker may be used. Reference numeral 411 denotes a mirror surface correction unit. Since it is difficult to process the curvature of the interferometer mirror of an axis that drives a long stroke such as the XY axes of the wafer stage 16 to an ideal zero, the mirror flatness separately provided is provided. The mirror curvature is corrected in a software manner by the correction value obtained by the measuring means. The value of the θ axis of the wafer stage 16 is the difference 4 between the measured values 401 (X1) and 402 (X2) from the two interferometers.
13 (415) by dividing by the span between the two interferometers. The values X ′, Y ′, and θ ′ indicating the position of the wafer stage 16 obtained by the above-described processing are compared with the reference scale by the magnification correction unit 416a.

On the other hand, measured values 404 to 406 and 407 to 407 to 406 from the Z sensor of the wafer stage 16 and the interferometer 15 between the platen.
409 is subjected to coordinate conversion by the coordinate conversion units 412a and 412b, added by the addition units 414a to 414c, and corrected for magnification by the magnification correction unit 416b. This addition result indicates the relative positions Z ′, ωx ′, and ωy ′ between the lens barrel base 13 and the wafer chuck on the wafer stage 16.

Further, the calculated values (X ′, Y ′, θ ′, Z ′, ωx ′, ωy ′) obtained by these processes are subjected to inter-axis interference correction by the inter-axis interference correction unit 417. The inter-axis interference correction is performed because the measurement light of the laser interferometer does not hit the mirror at the designed value and the irradiation angle of the measurement light of the laser interferometer does not hit the designed value. ABBE correction for correcting fooling and guide flatness correction for correcting distortion of the guide flatness with respect to the XY plane of the wafer stage 16 are included.

FIG. 5 shows the overlay correction unit 3 in FIG.
08 and the configuration of the difference calculator 303 are shown in detail. The table selector 501 in the overlay correction unit 308 reads the direction overlay correction table described with reference to FIG. 6, and determines the table (Forward or Reverse) to be used depending on the scanning direction (scan direction). Reference numeral 502 denotes a primary interpolation of the correction data in the table selected by the table selector 501, and calculates a correction amount from the linearly interpolated data, the current position of the wafer stage 16, and the shot center position given from the upper sequence. . This correction amount is calculated by the difference calculator 303.
It is added to a profile that is a sequential target value, the current position is subtracted, and a deviation output is obtained.

FIG. 6 shows an example of a direction overlay correction table serving as input data to the table selector 501. The origin of the correction table and the interval between the tables are used as variables in order to have flexibility in being changed by the reticle for measuring the direction overlay correction table used by the user. Further, the correction table is provided for each of the scanning directions of the scanning exposure, ie, “Forward” and “Reverse”. Such a difference in the scan direction is caused when the exposure is started in a state where the relative synchronization error between the wafer stage and the reticle stage is small but remains, or the lens barrel base 13 is deformed due to the load fluctuation due to the position fluctuation of the reticle stage 5. It has been found by the present inventors that it occurs in the case of about several nm. When the forward and reverse scanning exposures are performed at the same shot center target value, a so-called direction difference that causes a shift or a distortion in a shot corresponding to a scanning position is eliminated, and the exposure is performed by another type of scanning exposure apparatus. Mix & Mat for damaged wafers
In order to obtain ch (mix and match), it is possible to improve the overlay accuracy by actively changing and correcting the shot shape and the shot center position. Further, when the direction difference and the in-shot distortion tend to change depending on the scanning speed, the above-mentioned direction overlay correction table may be provided for each scanning speed.

FIG. 7 shows a correction function for the X axis obtained by performing primary interpolation on the direction overlay correction table described in FIG. In this embodiment, the data between the correction tables are complemented by a linear function, and the correction values at both ends defined in the table are the same as the correction values at both ends of the adjacent table. Consideration is made so that a sudden change in the target value does not occur when the stage approaches the section defined in the correction table. The correction function depends on the scan direction.
rd and Reverse, the correction direction is 6 axes (X,
Y, θ, Z, ωx, ωy).

The interpolation of the defined correction table is performed as follows. That is, assuming that the target value of the center point of the scan exposure shot is (Xtgt, Ytgt) and the coordinate value of the current wafer stage is (xc, yc), the scan exposure position (yk) in the current shot is represented by the following equation. Become.

[0030]

(Equation 1) Forward of the direction overlay correction table
The data of d is Df (k), and the data of Reverse is D
r (k), table origin is Org, table interval is I, Forward between tables (k−1, k)
Assuming that the primary interpolation functions in d and Reverse are F (k) and G (k), respectively, the correction function in Forward in the function section partitioned by the respective correction data is as follows. However, it is assumed that there is correction data up to z.

[0031]

(Equation 2) To find the correction function in the case of reverse, the above F
(N) is replaced with G (n) and Df (n) is replaced with Dr (n).

As an interpolation method other than that shown in FIG. 7, there is an interpolation method using a higher-order function or a spline function of second or higher order. Further, if a jump value is mixed in the correction table and the jump value is used as it is, not only does the stage not follow the target value, but also a factor that worsens the synchronization error between the reticle stage 5 and the wafer stage 16. Become. Therefore, the correction table may be approximated to one having a simple shape such as a quadratic function using the least squares method or the like.

FIG. 8 shows a user interface screen for inputting the direction overlay correction table. In order to define one correction table, the start point (Table O) of the table data common to each control axis
rigin), table interval (Table Inte)
rval), and the maximum number of tables (Max Number) to be valid in the table data entry fields thereafter
er of Table Data) is defined. In this embodiment, up to 20 points of table data can be input, and an arrangement of correction data is defined so that the entire range of the exposure shot including the normal exposure shot or the approach distance can be corrected by the table data. Entries of correction data exceeding the maximum number of valid tables are ignored. One correction table has table data entries for six axes.

The direction overlay correction table is used for correcting the so-called machine factor alignment error, which is to be corrected by the exposure apparatus to secure the absolute shot shape and array reproducibility, and the shape of the shot to be printed when performing Mix & Match. It is used for two purposes of correcting a process factor alignment error that positively distorts the center position. The former is an error that should not occur originally, but may occur when the positional relationship between the reticle and the mirror of the reticle stage and the positional relationship between the wafer and the mirror of the wafer stage are deformed with a long time constant. Such a reproducible element in the error is measured at the time of assembling adjustment of the exposure apparatus, stored in a storage medium such as a hard disk of the apparatus, and read out and used at the time of operation. In the latter case, when the previous layer is exposed by the machine in which the machine-factor alignment error occurs, the user measures and inputs the shape of the next layer and the shot center in accordance with the shift.

FIG. 10 is a diagram for explaining a method of synthesizing a plurality of direction overlay correction tables.
The direction overlay correction table 100 input via the user interface 1001 shown in FIG.
Reference numeral 2 denotes a process factor correction table. The direction overlay correction table 1004 due to the machine factor is measured at the time of factory adjustment, stored in the hard disk 1003 of the preprocessing unit 1006, and read out when the apparatus is operating. Direction overlay correction table 1002
And 1004 are added by the table synthesis logic unit 1005 to form one table, and the overlay correction unit 30
8 is used for the correction calculation. Further, it is possible to easily separate and manage the factors finely by creating two or more such correction tables and synthesizing the tables by the above method.

FIG. 9 shows an example of the two direction overlay correction tables in FIG. 10 and the shapes of the tables after combining. Direction overlay correction table 1004 (Table 2) input during factory adjustment
In the direction overlay correction table 1002 (Table 1) input by the user, since the pattern for measuring distortion in an exposure shot depends on the reticle, it is necessary to assume that the two have different starting points and intervals. Therefore, the correction table (Table1 + 2), which is the output after synthesis, is stored in the overlay correction unit 30
8 should select the finest pitch that is acceptable. The calculation of the data of the correction table to be output is shown in FIG.
The direction overlay correction table 100 is calculated based on the pitch of the correction table to be output based on the interpolation method shown in FIG.
If the correction amounts of 2 and 1004 are read, it can be easily performed. Usually, the direction overlay correction table 1004 due to the machine factor is measured only once at the time of assembling, and is not changed thereafter if the absolute arrangement accuracy of the scan exposure shot is adjusted to be within an allowable value. . The process factor direction overlay correction table 1002 is measured and input each time the user process is changed.

<Embodiment of Device Manufacturing Method> Next, an embodiment of a device manufacturing method using the above-described scanning exposure apparatus will be described. FIG. 11 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.). In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and step 4
Is a process of forming a semiconductor chip using the wafer produced by the above process, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 12 shows a detailed flow of the wafer process (step 4). Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus or exposure method to align and print the circuit pattern of the mask on a plurality of shot areas of the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the production method of this embodiment, it is possible to produce a large-sized device, which was conventionally difficult to produce, at low cost.

[0040]

As described above, according to the present invention, the target position of the substrate or the original plate during the scanning exposure is corrected using the correction data, so that the overlay accuracy can be improved.

By using different correction data depending on the scanning direction, it is possible to improve the overlay accuracy between the scan directions and further improve the overlay accuracy within a shot.

Further, by using a table obtained by synthesizing a plurality of similar tables existing for the same object to be corrected, an error of a machine factor and an error of a process factor are distinguished by the table before the synthesis. Can be managed separately.

[Brief description of the drawings]

FIG. 1 is a diagram showing a scanning exposure apparatus according to one embodiment of the present invention.

FIG. 2 is a diagram illustrating a difference in a trajectory of an exposure slit depending on the presence or absence of a direction overlay correction according to the present invention.

FIG. 3 is a block diagram showing a control operation unit for controlling a wafer stage in the apparatus shown in FIG. 1;

FIG. 4 is a block diagram illustrating a detailed example of a correction processing unit in FIG. 3;

FIG. 5 is a block diagram illustrating details of configurations of an overlay correction unit and a difference calculator in FIG. 3;

6 is a diagram illustrating an example of a direction overlay correction table serving as input data to an overlay correction unit in FIG. 5;

FIG. 7 is a diagram illustrating a correction function obtained by performing primary interpolation on the correction table of FIG. 6;

FIG. 8 is a view showing a user interface for inputting a direction overlay correction table usable in the apparatus of FIG. 1;

9 is a diagram showing an example of two direction overlay correction tables that can be used in the apparatus of FIG. 1 and a table obtained by combining them;

FIG. 10 is a diagram illustrating a method of synthesizing a plurality of direction overlay correction tables.

FIG. 11 is a flowchart illustrating a device manufacturing method that can use the scanning exposure apparatus of the present invention.

FIG. 12 is a detailed flowchart of a wafer process in FIG. 11;

[Explanation of symbols]

5: reticle stage, 6: reticle, 11: projection lens, 16: wafer stage, 21: wafer, 303: difference calculator, 307: profiler, 308: overlay correction unit, 501: table selector, 502: interpolation processing unit , 1001: User IF, 1002, 1004: Direction overlay correction table, 1005: Table synthesis logic unit.

Claims (9)

[Claims] 1. An original plate and a substrate for a projection optical system,
In a scanning exposure apparatus for scanning and exposing a pattern of the substrate to an exposure shot on the original plate while performing scanning movement by controlling to sequentially position the substrate at a predetermined target position,
A scanning exposure apparatus comprising: target position correcting means for correcting each target position of an original plate or a substrate in the control based on predetermined correction data determined according to a scanning exposure position in an exposure shot. 2. The target position correcting means performs the correction on target positions in all control directions to be controlled by the control, and the correction data includes the correction data expressed by using a center of an exposure shot as a base point. 2. The scanning exposure apparatus according to claim 1, wherein the scanning exposure apparatus is obtained from a table of the correction data for the control directions. 3. The scanning exposure apparatus according to claim 2, wherein the table has different correction data depending on the scanning direction of the scanning exposure. 4. The scanning exposure apparatus according to claim 2, wherein a plurality of types of tables are prepared according to a scanning speed of the scanning exposure. 5. The apparatus according to claim 2, wherein said table has data of an origin and a table arrangement interval for associating the correction data with each scanning exposure position in an exposure shot, and these can be arbitrarily designated. The scanning exposure apparatus according to any one of claims 1 to 4. 6. The table is a set of a finite number of discrete correction data, and the target position correction means obtains a correction amount between the respective correction data by interpolation calculation, and based on this, calculates the correction amount in the control. The scanning exposure apparatus according to claim 2, wherein each of the target positions is corrected. 7. The scanning according to claim 2, wherein the table is obtained by combining a plurality of similar tables for the same correction target. Exposure equipment. 8. An original plate and a substrate for a projection optical system,
In a device manufacturing method for manufacturing a device by scanning and exposing a pattern of the substrate to an exposure shot on the original plate while scanning and moving by controlling to sequentially position the substrate at a predetermined target position, the scanning movement is controlled by the control. Wherein the target position of the original plate or the substrate is corrected while correcting based on predetermined correction data determined according to a scanning exposure position in an exposure shot. 9. The scanning exposure apparatus according to claim 8, wherein the scanning exposure is performed by performing a scanning movement while correcting the target position using the scanning exposure apparatus according to claim 1. Device manufacturing method.