KR20120047849A

KR20120047849A - Exposure apparatus, exposure method, and device manufacturing method

Info

Publication number: KR20120047849A
Application number: KR1020117028627A
Authority: KR
Inventors: 마사키 가토; 가이 나라
Original assignee: 가부시키가이샤 니콘
Priority date: 2009-08-26
Filing date: 2010-08-25
Publication date: 2012-05-14
Also published as: KR20170096216A; TW201118509A; KR101925114B1; JP5692076B2; KR101769091B1; WO2011024866A1; KR102047505B1; KR20180129989A; CN102472987A; JPWO2011024866A1

Abstract

An exposure apparatus for exposing a substrate, comprising: a stage for moving with a placement portion on which the substrate is disposed, a detection portion for detecting a portion of the substrate disposed on the stage and positioned in a predetermined region of the placement portion; And a control unit which performs drive control of the stage based on the detection result of the detection unit.

Description

Exposure apparatus, exposure method, and device manufacturing method {EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD}

The present invention relates to an exposure apparatus, an exposure method and a device manufacturing method.

This application claims priority based on Japanese Patent Application No. 2009-195686 for which it applied on August 26, 2009, and uses the content here.

For example, in the manufacturing process of electronic devices, such as a flat panel display, the exposure apparatus which exposes a board | substrate with exposure light through a mask as disclosed in the following patent document is used. The exposure apparatus includes a mask stage capable of holding and moving a mask and a substrate stage capable of holding and moving a substrate.

In such an exposure apparatus, after holding a board | substrate in a board | substrate stage, the alignment process of a board | substrate is performed. In the alignment process, the alignment mark provided in the board | substrate is detected, and a board | substrate stage is driven based on a detection result. The detection part of the alignment mark needs to be fixed in position with the projection optical system. For example, the technique which makes a detection part fixed to the projection optical system, and moves the board | substrate stage at the time of detection of an alignment mark is known.

Patent Document 1: Japanese Patent Laid-Open No. 2006-195353

However, in the said structure, when an alignment mark is provided in several places of the board | substrate, for example, in order to detect these alignment marks, it is necessary to move a board | substrate stage every time. If the substrate stage is moved each time the alignment process is performed, the alignment process takes time and is disadvantageous in terms of throughput improvement.

An aspect of the present invention aims to provide an exposure apparatus, an exposure method, and a device manufacturing method capable of improving throughput.

According to the first aspect of the present invention, there is provided an exposure apparatus for exposing a substrate, comprising: a stage moving with a placement portion on which the substrate is disposed, and a predetermined region of the placement portion of the substrate provided on the stage and disposed on the placement portion; There is provided an exposure apparatus including a detection section for detecting a portion located at and a control section for performing drive control of the stage based on a detection result of the detection section.

According to a second aspect of the present invention, there is provided an exposure method for exposing a substrate, comprising: arranging the substrate on a placement portion of a stage and using a detection portion provided on the stage, to a predetermined region of the placement portion of the substrate; There is provided an exposure method comprising a detection step of detecting a portion to be positioned and a drive control step of performing drive control of the stage based on a detection result of the detection unit.

According to a third aspect of the present invention, using the exposure apparatus of the above aspect, exposing the substrate to which the photosensitive agent is applied and transferring a pattern to the substrate, and developing the photosensitive agent exposed by the exposure to develop the pattern. A device manufacturing method comprising forming an exposure pattern layer corresponding to and processing the substrate through the exposure pattern layer is provided.

According to an aspect of the present invention, the throughput can be improved.

1 is a schematic configuration diagram illustrating an example of an exposure apparatus according to a first embodiment of the present invention.
2 is a perspective view illustrating an example of an exposure apparatus according to the present embodiment.
3 is a diagram illustrating an example of a lighting system according to the present embodiment.
4 is a diagram illustrating an example of a projection system and a substrate stage according to the present embodiment.
5 is a diagram illustrating an example of a backside alignment system according to the present embodiment.
6 is a diagram illustrating an example of the positional relationship between the illumination region, the detection region, and the mask according to the present embodiment.
7 is a diagram showing an example of the positional relationship between the projection area, the detection area, and the substrate according to the present embodiment.
8 is a flowchart illustrating an example of an exposure method according to the present embodiment.
9A is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
9B is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
10 is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
11A is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
11B is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
12 is a diagram illustrating an example of the operation of the exposure apparatus according to the present embodiment.
It is a perspective view which shows an example of the exposure apparatus which concerns on 2nd Embodiment of this invention.
14 is a diagram illustrating another configuration of the exposure apparatus.
15A is a diagram illustrating another configuration of the exposure apparatus.
15B is a diagram illustrating another configuration of the exposure apparatus.
It is a figure which shows the other structure of an exposure apparatus.
17 is a diagram illustrating another configuration of the exposure apparatus.
It is a flowchart for demonstrating an example of the manufacturing process of a microdevice.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings. In the following description, the positional relationship of each member is demonstrated, setting an XYZ rectangular coordinate system and referring this XYZ rectangular coordinate system. The direction orthogonal to the X-axis direction in a predetermined direction in the horizontal plane and the X-axis direction in the horizontal plane is a direction orthogonal to each of the Y-axis direction, the X-axis direction and the Y-axis direction (that is, the vertical direction) as the Z-axis direction. In addition, the rotation (inclination) directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

[First Embodiment]

A first embodiment of the present invention will be described.

FIG. 1: is a schematic block diagram which shows an example of the exposure apparatus EX which concerns on this embodiment, and FIG. 2 is a perspective view. 1 and 2, the exposure apparatus EX includes a mask stage 1 capable of holding and moving a mask M, a substrate stage 2 capable of holding and moving a substrate P, and a mask. A drive system 3 for moving the stage 1, a drive system 4 for moving the substrate stage 2, an illumination system IS for illuminating the mask M with exposure light EL, and a furnace; It is provided with the projection system PS which projects the image of the pattern of the mask M illuminated with the light light EL on the board | substrate P, and the control apparatus 5 which controls the operation | movement of the whole exposure apparatus EX. .

The mask M includes a reticle on which a device pattern projected onto the substrate P is formed. The board | substrate P contains a base material, such as a glass plate, for example, and the photosensitive film (coated photosensitive agent) formed on this base material. In this embodiment, the board | substrate P contains a large glass plate, and the size of one side of this board | substrate P is 500 mm or more, for example. In this embodiment, as a base material of the board | substrate P, the rectangular glass plate whose one side is about 3000 mm is used. On the surface on the −Z side of the mask M, a mark Ma for base line amount measurement is provided (see FIG. 4).

Moreover, the exposure apparatus EX of this embodiment is the interferometer system 6 which measures the positional information of the mask stage 1 and the board | substrate stage 2, and the 1st which detects the positional information of the surface of the mask M. As shown in FIG. The detection system 7, the 2nd detection system 8 which detects the positional information of the surface of the board | substrate P, the surface alignment system 40 which detects the alignment mark of the board | substrate P from the surface side, and a board | substrate The back surface alignment system 60 which detects the alignment mark of (P) from the back surface side is provided.

In addition, the exposure apparatus EX includes a body 13. The body 13 is disposed on the base plate 10 and the base plate 10 disposed on the support surface (for example, bottom surface) FL in the clean room via the dustproof block BL, for example. The first column 11 and the second column 12 disposed on the first column 11. In the present embodiment, the body 13 supports each of the projection system PS, the mask stage 1, and the substrate stage 2. In the present embodiment, the projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported to be movable with respect to the second column 12. The substrate stage 2 is supported to be movable with respect to the base plate 10.

In the present embodiment, the projection system PS has a plurality of projection optical systems. Illumination system IS has several illumination modules corresponding to several projection optical systems. Moreover, the exposure apparatus EX of this embodiment projects the image of the pattern of the mask M on the board | substrate P, moving the mask M and the board | substrate P synchronously to a predetermined scanning direction. That is, the exposure apparatus EX of this embodiment is what is called a multilens type scanning exposure apparatus.

In this embodiment, projection system PS has seven projection optical systems PL1-PL7, and illumination system LS has seven illumination modules IL1-IL7. In addition, the number of projection optical systems and illumination modules is not limited to seven, For example, projection system PS may have 11 projection optical systems, and illumination system IS may have 11 illumination modules.

Illumination system IS can irradiate exposure light EL to predetermined illumination area | regions IR1-IR7. Illumination area | regions IR1-IR7 are provided in the irradiation area | region of exposure light EL radiate | emitted from each illumination module IL1-IL7. In the present embodiment, the illumination system IS illuminates each of the other seven illumination regions IR1 to IR7 with the exposure light EL. Illumination system IS illuminates the part arrange | positioned in illumination region IR1-IR7 among the masks M by exposure light EL of uniform illuminance distribution. In this embodiment, the bright line (g line | wire, h line | wire, i line | wire) emitted from a mercury lamp is used as exposure light EL radiated | emitted from illumination system IS, for example.

The mask stage 1 can move with respect to the illumination area | regions IR1-IR7, with the mask M hold | maintained. The mask stage 1 has a mask holding part 15 that can hold the mask M. FIG.

The mask holding part 15 includes the chuck mechanism which can vacuum-adsorb the mask M, and hold | maintains the mask M so that release is possible. In this embodiment, the mask holding | maintenance part 15 hold | maintains the mask M so that the lower surface (pattern formation surface) of the mask M and an XY plane may become substantially parallel. The drive system 3 includes a linear motor, for example, and can move the mask stage 1 on the guide surface 12G of the 2nd column 12. In the present embodiment, the mask stage 1 is operated by the drive system 3 to hold the mask M in the mask holding part 15, and the X-axis, It can move in three directions of a Y-axis and (theta) Z direction.

Projection system PS can irradiate exposure light EL to predetermined projection area | regions PR1-PR7. Projection area | regions PR1-PR7 correspond to the irradiation area | region of exposure light EL radiate | emitted from each projection optical system PL1-PL7. In this embodiment, projection system PS projects the image of a pattern in each of seven other projection area | regions PR1-PR7. Projection system PS projects the image of the pattern of the mask M on the part arrange | positioned in projection area | regions PR1-PR7 among the board | substrates P at a predetermined projection magnification.

The substrate stage 2 can move with respect to the projection area | regions PR1-PR7 in the state which hold | maintained the board | substrate P. FIG. The board | substrate stage 2 has the board | substrate holding part 16 which can hold | maintain the board | substrate P. As shown in FIG. The board | substrate holding part 16 contains the chuck mechanism which can vacuum-adsorb the board | substrate P, and hold | maintains the board | substrate P so that release is possible. In this embodiment, the board | substrate holding part 16 hold | maintains the board | substrate P so that the surface (exposure surface) of the board | substrate P and an XY plane may become substantially parallel. The drive system 4 includes a linear motor, for example, and can move the substrate stage 2 on the guide surface 10G of the base plate 10. In this embodiment, the board | substrate stage 2 X-axis on the guide surface 10G in the state which hold | maintained the board | substrate P by the board | substrate holding part 16 by the operation of the drive system 4. , Y-axis, Z-axis, θX, θY, and θZ directions in six directions.

3 is a schematic configuration diagram showing an example of the lighting system IS according to the present embodiment. In FIG. 3, the illumination system IS includes a light source 17 made of an ultra-high pressure mercury lamp, an ellipsoidal mirror 18 reflecting light emitted from the light source 17, and at least a portion of the light from the ellipsoidal mirror 18. The dichroic mirror 19 reflecting a part, the shutter device 20 which can block the progress of light from the dichroic mirror 19, and the collimator into which the light from the dichroic mirror 19 is incident. The relay optical system 21 including the lens 21A and the condenser lens 21B, the interference filter 22 for passing only light in a predetermined wavelength region, and the light from the relay optical system 21 are branched to provide a plurality of illuminations. The light guide unit 23 supplied to each of the modules IL1-IL7 is provided.

3, only the 1st illumination module IL1 is shown among the 1st-7th illumination modules IL1-IL7. The 2nd-7th illumination modules IL2-IL7 are the structure equivalent to the 1st illumination module IL1. In the following description, the first lighting module IL1 is mainly described among the first to seventh lighting modules IL1 to IL7, and the description of the second to seventh lighting modules IL2 to IL7 is briefly described. Or omit it.

Light from the relay optical system 21 enters the incidence end 24 of the light guide unit 23 and is emitted from the plurality of output ends 25A to 25G. The first lighting module IL1 includes a shutter device 26 capable of blocking the progress of light from the emission end 25A, a collimating lens 27 supplied with the light from the emission end 25A, and collimating. The fly's eye integrator 28 is supplied with the light from the lens 27, and the condenser lens 29 is supplied with the light from the fly's eye integrator 28. The exposure light EL emitted from the condenser lens 29 is irradiated to the illumination region IR1. The first illumination module IL1 illuminates the illumination region IR1 with the exposure light EL having a uniform illuminance distribution.

The 2nd-7th illumination modules IL2-IL7 are the structure equivalent to the 1st illumination module IL1. Each of the second to seventh illumination modules IL2 to IL7 illuminates the respective illumination regions IR2 to IR7 with exposure light EL having a uniform illuminance distribution. Illumination system IS illuminates at least one part of mask M arrange | positioned at illumination area | regions IR1-IR7 with exposure light EL of uniform illuminance distribution.

4 shows the projection system PS, the first detection system 7, the second detection system 8, the surface alignment system 40, the back alignment system 60, and the projection regions PR1 to FIG. 4. It is a figure which shows an example of the board | substrate stage 2 arrange | positioned at PR7.

First, the first projection optical system PL1 will be described. In FIG. 4, the first projection optical system PL1 projects the image of the pattern of the mask M illuminated by the exposure light EL by the first illumination module IL1 onto the substrate P. In FIG. The first projection optical system PL1 uses an image plane adjusting unit 33, a shift adjusting unit 34, two pairs of reflection refracting optical systems 31 and 32, a field stop 35, and a scaling adjusting unit 36. Equipped.

The exposure light EL irradiated to the illumination region IR1 and transmitted through the mask M is incident on the image adjusting unit 33. The image plane adjusting unit 33 can adjust the position (positions in the Z-axis, θX, and θY directions) of the image plane of the first projection optical system PL1. The upper surface adjustment part 33 is arrange | positioned in the position which is optically substantially conjugate with respect to the mask M and the board | substrate P. As shown in FIG. The upper surface adjustment part 33 is a drive apparatus (not shown) which can move the 1st optical member 33A with respect to the 1st optical member 33A and the 2nd optical member 33B, and the 2nd optical member 33B. Not included). The first optical member 33A and the second optical member 33B face each other with a predetermined gap by the gas bearing. The first optical member 33A and the second optical member 33B are glass plates that can transmit the exposure light EL, and each has a wedge shape. The control apparatus 5 can operate the drive apparatus, and can adjust the position of the upper surface of the 1st projection optical system PL1 by adjusting the positional relationship of the 1st optical member 33A and the 2nd optical member 33B. The exposure light EL which has passed through the image adjusting part 33 enters into the shift adjusting part 34.

The shift adjustment part 34 can shift the image of the pattern of the mask M on the board | substrate P to an X-axis direction and a Y-axis direction. The exposure light EL transmitted through the shift adjuster 34 is incident on the first pair of reflection refracting optical systems 31. The reflective refractive optical system 31 forms the intermediate image of the pattern of the mask M. As shown in FIG. The exposure light EL emitted from the reflective refractive optical system 31 is supplied to the field stop 35.

The field stop 35 is disposed at a position in the middle of the pattern formed by the reflective refractive optical system 31. The field stop 35 defines the projection area PR1. In the present embodiment, the field stop 35 defines the projection area PR1 on the substrate P in a trapezoidal shape. The exposure light EL passing through the field stop 35 enters the second pair of reflection refracting optical systems 32.

The reflective refractive optical system 32 is configured similarly to the reflective refractive optical system 31. The exposure light EL emitted from the reflective refractive optical system 32 is incident on the scaling adjustment unit 36. The scaling adjustment part 36 can adjust the magnification (scaling) of the image of the pattern of the mask M. FIG. The exposure light EL passing through the scaling adjustment unit 36 is irradiated onto the substrate P. In this embodiment, the 1st projection optical system PL1 projects the image of the pattern of the mask M on the board | substrate P by upright magnification.

The image quality adjusting device 30 that adjusts the imaging characteristics (optical characteristics) of the first projection optical system PL1 is configured by the above-described image adjusting unit 33, the shift adjusting unit 34, and the scaling adjusting unit 36. The imaging characteristic adjustment device 30 can adjust the position of the image plane of the first projection optical system PL1 with respect to six directions in the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions, Magnification can be adjusted.

In the above, 1st projection optical system PL1 was demonstrated. The 2nd-7th projection optical systems PL2-PL7 have the structure equivalent to 1st projection optical system PL1. Description of the second to seventh projection optical systems PL2 to PL7 is omitted.

As shown to FIG. 2 and FIG. 4, the reference member 43 is arrange | positioned at the upper surface of the board | substrate stage 2 on the + X side with respect to the board | substrate holding part 16. As shown in FIG. The upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held by the substrate holding unit 16. Moreover, the transmission part 45 which can permeate | transmit exposure light EL is arrange | positioned at the upper surface 44 of the reference member 43. As shown in FIG. Below the reference member 43, a light receiving device 46 capable of receiving light transmitted through the transmission part 45 is disposed. The light receiving device 46 includes a lens system 47 through which light through the transmission part 45 is incident, and an optical sensor 48 that receives light passing through the lens system 47. In the present embodiment, the optical sensor 48 includes an imaging device CCD. The optical sensor 48 outputs a signal corresponding to the received light to the control device 5.

Moreover, the optical member 50 which has the permeation | transmission part 49 is arrange | positioned at the upper surface of the board | substrate stage 2 of the -X side with respect to the board | substrate holding part 16. As shown in FIG. Below the optical member 50, a light receiving device 51 capable of receiving light transmitted through the transmission part 49 is disposed. The light receiving device 51 includes a lens system 52 into which light passing through the transmission part 49 is incident, and an optical sensor 53 which receives light passing through the lens system 52. The optical sensor 53 outputs the signal according to the received light to the control apparatus 5.

Next, the interferometer system 6, the 1st, 2nd detection systems 7 and 8, the surface alignment system 40, and the back surface alignment system 60 are demonstrated. 1 and 2, the interferometer system 6 includes a laser interferometer unit 6A for measuring position information of the mask stage 1, and a laser interferometer unit 6B for measuring position information of the substrate stage 2. Has The laser interferometer unit 6A can measure the positional information of the mask stage 1 using the measurement mirror 1R disposed on the mask stage 1.

The laser interferometer unit 6B can measure the positional information of the substrate stage 2 using the measurement mirror 2R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 uses the laser interferometer units 6A and 6B to position information on the mask stage 1 and the substrate stage 2 in the X-axis, Y-axis, and θX directions, respectively. Can be measured.

The 1st detection system 7 detects the position of the lower surface (pattern formation surface) of the mask M in the Z-axis direction. The first detection system 7 is a so-called multi-point focus leveling detection system of an incidence scanning method, and as shown in FIG. 4, faces the lower surface of the mask M held by the mask stage 1. It has a some detector 7A-7F. Each of the detectors 7A to 7F has a projection unit for irradiating detection light to a predetermined detection area, and a light receiving unit capable of receiving detection light from the lower surface of the mask M disposed in the detection area.

The 2nd detection system 8 detects the position of the surface (exposure surface) of the board | substrate P in the Z-axis direction. The 2nd detection system 8 is what is called a multipoint focus leveling detection system of an incidence | inclination system, As shown in FIG. 4, The some detector arrange | positioned facing the surface of the board | substrate P hold | maintained at the board | substrate stage 2 is shown. (8A-8H). Each of the detectors 8A to 8H has a projection unit for irradiating detection light to a predetermined detection region, and a light receiving unit capable of receiving detection light from the surface of the substrate P disposed in this detection region.

The surface alignment system 40 detects alignment marks m1-m6 (refer FIG. 7 etc.) provided in the board | substrate P. As shown in FIG. The surface alignment system 40 is a so-called off-axis alignment system. As shown in FIG. 4, the plurality of microscopes 40A to 40F are disposed to face the surface of the substrate P held on the substrate stage 2. Has Each of the microscopes 40A to 40F acquires an optical image of a projection unit for irradiating detection light to the detection areas AL1 to AL6 and alignment marks m1 to m6 disposed in the detection areas AL1 to AL6. It has a light receiving unit that can.

The rear surface alignment system 60 detects alignment marks m1-m6 (refer FIG. 7 etc.) provided in the board | substrate P. As shown in FIG. The back alignment system 60 is an alignment system of a so-called off axis system similarly to the surface alignment system 40. As shown in FIG. 4, the back surface alignment system 60 is provided in the stage main body 2A of the board | substrate stage 2, and alignment marks m1-from the surface (back surface) side of the -Z side of the board | substrate P are provided. m6) can be detected. In addition, since the back surface alignment system 60 is provided in the stage main body 2A, it can move with the said board | substrate stage 2 integrally. It is preferable that the back surface alignment system 60 is provided in the position different from the board | substrate holding part 16 among the board | substrate stage 2. As shown in FIG. By this structure, the backside alignment system 60 is not removed from the substrate stage 2 at the time of replacing the board | substrate holding part 16, and the position of the backside alignment system 60 is replaced with the board | substrate holding part 16. FIG. The trouble of setting every hour can be omitted. Moreover, the influence of the heat by the board | substrate holding part 16 may be suppressed.

The rear surface alignment system 60 is provided in the edge part of the + X side, and the edge part of the -X side among 2A of stage main bodies. At the -X side end portion of the stage main body 2A, a plurality of (for example, four) microscopes 60A to 60F are provided along the Y direction, for example. At the + X side edge part of 2 A of stage main bodies, the microscope (60G-60L) of several (for example, four) is provided along the Y direction, for example.

5 is a diagram illustrating the configuration of the backside alignment system 60. The rear surface alignment system 60 masks the light source 61 which emits detection light, the transmission lens system 62 in which the detection light from this light source 61 is incident, and the detection light which passed this transmission lens system 62 ( Mirrors 63 and 64 leading to the lower surface of M, and lenses 65 for focusing the detection light guided by the mirrors 63 and 64 in the detection areas (predetermined areas) AL11 to AL16 and AL21 to AL26. The lens 66 for inducing the detection light reflected from the detection areas AL11 to AL16 and AL21 to AL26, and the microscopes 60A to 60F and 60G to 60L for detecting the detection light guided by the lens 66. ) For example, alignment marks m1 to m6 are provided in the detection areas AL11 to AL16 and AL21 to AL26.

The structure of the back surface alignment system 60 shown in FIG. 5 may be used as a structure of the surface alignment system 40 mentioned above, for example. In this way, in the backside alignment system 60, the detection light is projected onto the detection areas AL11 to AL16 and AL21 to AL26, and the reflected light is received by the microscopes 60A to 60F and 60G to 60L, thereby detecting the detection area ( Optical images of alignment marks m1 to m6 provided in AL11 to AL16 and AL21 to AL26 can be obtained.

FIG. 6: is a schematic diagram which shows an example of the positional relationship of illumination area | regions IR1-IR7 and the mask M, and has shown the positional relationship in plane containing the lower surface of the mask M. As shown in FIG. As shown in FIG. 6, the lower surface of the mask M has the pattern area | region MA in which the pattern was formed.

In the present embodiment, each of the illumination regions IR1 to IR7 is trapezoidal in the XY plane. In the present embodiment, the illumination regions IR1, IR3, IR5, IR7 by the illumination modules IL1, IL3, IL5, IL7 are disposed at substantially equal intervals in the Y-axis direction, and the illumination modules IL2, IL4, Illumination areas IR2, IR4, IR6 by IL6) are arrange | positioned substantially equally in the Y-axis direction. Illumination regions IR1, IR3, IR5, IR7 are arrange | positioned with respect to illumination region IR2, IR4, IR6 at -X side. In addition, with respect to the Y-axis direction, the illumination areas IR2, IR4, IR6 are disposed between the illumination areas IR1, IR3, IR5, IR7.

The control apparatus 5 moves the mask stage 1 to an X-axis direction, and moves the lower surface of the mask M hold | maintained by the mask stage 1 with respect to the detection area of the detector 7A-7F to an X-axis direction. Move, arrange | position a some detection point set in the lower surface (pattern area | region MA) of the mask M in the detection area | region of the detector 7A-7F, and detect the position of the Z-axis direction of these some detection point. can do. The control apparatus 5 is based on the position of the lower surface of the mask M based on the position in the Z-axis direction of the lower surface of the mask M detected by each of the several detection points output from the 1st detection system 7 [ Position information (map data) relating to the Z-axis, θX, and θY directions of the pattern region MA].

7 shows detection regions AL1 to AL6 under the microscopes 40A to 40F, detection regions AL11 to AL18 under the microscopes 60A to 60L, and alignment marks m1 to m6 of the substrate P. FIG. It is a schematic diagram which shows an example of the positional relationship between them, and has shown the positional relationship in the plane containing the surface of the board | substrate P. As shown in FIG.

As shown in FIG. 7, in this embodiment, the surface of the board | substrate P has several exposure area | region (processing area | region) PA1-PA6 to which the image of the pattern of the mask M is projected. In the present embodiment, the surface of the substrate P has six exposure areas PA1 to PA6. The exposure areas PA1, PA2, and PA3 are arranged at substantially equal intervals in the Y-axis direction, and the exposure areas PA4, PA5, and PA6 are arranged at substantially equal intervals in the Y-axis direction. Exposure area PA1, PA2, PA3 is arrange | positioned at the + X side with respect to exposure area PA4, PA5, PA6.

In this embodiment, each of the projection area | regions PR1-PR7 is trapezoid in XY plane. In this embodiment, projection area | regions PR1, PR3, PR5, PR7 by projection optical systems PL1, PL3, PL5, PL7 are arrange | positioned at substantially equal intervals in the Y-axis direction, and projection optical systems PL2, PL4, Projection area | region PR2, PR4, PR6 by PL6) is arrange | positioned substantially equally in the Y-axis direction. Projection area | region PR1, PR3, PR5, PR7 is arrange | positioned with respect to projection area | region PR2, PR4, PR6 at -X side. In addition, with respect to the Y-axis direction, projection areas PR2, PR4, and PR6 are disposed between the projection areas PR1, PR3, PR5, and PR7.

In the present embodiment, the detection areas AL1 to AL6 by the microscopes 40A to 40F are arranged on the -X side with respect to the projection areas PR1 to PR7. The detection areas AL1 to AL6 are disposed apart in the Y axis direction. Out of the plurality of detection areas AL1 to AL6, the interval between the two outer detection areas AL1 and the detection area AL6 in the Y-axis direction is outward in the Y-axis direction among the plurality of exposure areas PA1 to PA6. It is almost equal to the space | interval between the edge on the -Y side of two exposure areas PA1 and PA4, and the edge on the + Y side of exposure area PA3 and PA6.

In the present embodiment, the detection regions AL11 to AL14 and the microscopes 60G to 60L by the microscopes 60A to 60F are each arranged on a straight line along the Y direction on the stage main body 2A, for example. . The interval between the detection area AL11 and the detection area AL12 and the distance between the detection area AL15 and the detection area AL16 are respectively determined by the detection area AL1 and the microscope 40C by the microscope 40A. It is equal to the interval between detection areas AL3. The interval between the detection area AL12 and the detection area AL13 and the interval between the detection area AL16 and the detection area AL17 are respectively the detection area AL4 by the detection area AL3 and the microscope 40D. It is equal to the space between them. The interval between the detection area AL13 and the detection area AL14 and the distance between the detection area AL17 and the detection area AL18 are the detection area AL6 by the detection area AL4 and the microscope 40F. It is equal to the interval between them. For this reason, detection area AL11-AL14 and detection area AL15-detection area AL18 by microscope 60A-60F are overlapped with said detection area AL1, AL3, AL4, AL6, respectively. have.

The surface alignment system 40 and the back surface alignment system 60 detect the some alignment mark m1-m6 provided in the board | substrate P. As shown in FIG. In this embodiment, six alignment marks m1-m6 are provided on the board | substrate P in the Y-axis direction, and the group of these alignment marks m1-m6 is arrange | positioned in four places which were separated in the X-axis direction. It is. The alignment marks m1 and m2 are provided adjacent to both ends of the exposure areas PA1 and PA4, and the alignment marks m3 and m4 are provided adjacent to both ends of the exposure areas PA2 and PA5. The marks m5 and m6 are provided adjacent to both ends of the exposure areas PA3 and PA6.

In the present embodiment, the microscopes 40A to 40F (detection areas AL1 to AL6) and microscopes correspond to the six alignment marks m1 to m6 disposed on the substrate P in the Y-axis direction. (60A to 60F) (detection areas AL11 to AL16) and microscopes 60G to 60L (detection areas AL21 to AL26) are disposed. The detection areas of the microscopes 40A to 40F are provided so as to be disposed on the alignment marks m1 to m6 simultaneously. The detection areas of the microscopes 60A to 60F and the microscopes 60G to 60L are arranged simultaneously on four alignment marks m1, m3, m4 and m6 among the six alignment marks m1 to m6.

Next, an example of the method of exposing the board | substrate P using the exposure apparatus EX which has the above-mentioned structure is demonstrated, referring the flowchart of FIG. 8 and the schematic diagram of FIGS. 9A-12.

First, the control apparatus 5 carries in (loads) the mask M to the mask stage 1 (step S1). After the mask M is held in the mask stage 1, a setup process including alignment processing, various measurement processes, and calibration processing of the mask M is executed based on the exposure recipe (step S2). In the present embodiment, the alignment process of the mask M is performed by the light receiving device 46 through the projection system PS and the transmission part 45 to pass an image of an alignment mark (not shown) disposed on the mask M. FIG. It includes the process of receiving light and measuring the position of the mask M in the XY plane.

As the measurement processing, for example, a process of measuring the illuminance of the exposure light EL emitted from each of the projection optical systems PL1 to PL7 using the light receiving device 51 and the imaging characteristics of each of the projection optical systems PL1 to PL7 At least one of the processes measured using the light receiving device 46 is included.

In addition, in the measurement process, the positional relationship (base line amount) between the detection areas AL1 to AL6 of the surface alignment system 40 and the projection position on the pattern of the mask M is determined by the surface alignment system 40 and the transmission unit ( 45), the process of measuring using the light receiving apparatus 46, etc. is performed. In this case, for example, as shown in FIGS. 9A and 9B, the exposure light is irradiated to the mark Ma provided on the mask M, and the pattern image through the mark Ma is projected onto the reference member 43. The light receiving device 46 detects a pattern image based on the reference member 43. The control apparatus 5 measures a base line amount based on the detection result by the light receiving apparatus 46. This operation is first performed on the projection optical systems PL1, PL3, PL5, and PL7 as shown in Fig. 9A, and then on the projection optical systems PL2, PL4, PL6 as shown in Fig. 9B.

The calibration process is a process of adjusting the illuminance of the exposure light EL emitted from each illumination module IL1-IL7 using the result of a measurement process, and the measurement result of the imaging characteristic measured using the light receiving device 46. On the basis of this, at least one of the processes of adjusting the imaging characteristics of each of the projection optical systems PL1 to PL7 using the imaging characteristic adjusting device 30 is included.

The control apparatus 5 loads (loads) the board | substrate P to the board | substrate stage 2 at the predetermined timing after completing each said process (step S3). After the board | substrate P is hold | maintained at the board | substrate stage 2, the alignment process of the board | substrate P is performed based on an exposure recipe. In the alignment processing, alignment marks m1 to m6 provided on the substrate P are detected (step S4), and the substrate stage 2 is driven in accordance with the detection result (step S5).

After the alignment process of the board | substrate P, exposure of each exposure area | region PA1-PA6 is started (step S6). In this exposure process, the control apparatus 5 moves the pattern area MA to illumination area | regions IR1-IR7, for example, and moves exposure area | region PA1-PA3 to projection area | regions PR1-PR7. Exposure of each exposure area | region PA1-PA6 is started.

Hereinafter, in the same lot, the process of said step S1-step S6 is repeated. The same lot contains the group of the some board | substrate P exposed using the same mask M. FIG. In at least the same lot, exposure is performed under the same exposure recipe.

Next, the alignment mark detection process (step S4) of the board | substrate P contained in the said operation | movement is demonstrated.

In the alignment process of the board | substrate P in this embodiment, about the board | substrate P of the first purchase which performs exposure processing, the alignment mark is used using both the surface alignment system 40 and the back surface alignment system 60. (m1 to m6) are detected (step S4-1).

The control device 5 causes the surface alignment system 40 to be calibrated when the substrate P is carried in the substrate stage 2. As shown in FIG. 10, this calibration process detects the reference member 43 by the surface alignment system 40, and corrects the surface alignment system 40 based on the detection result. In this calibration process, the control apparatus 5 corrects a detection value, for example.

After the calibration process, the control device 5 moves the substrate stage 2 to the -X side, and moves the four alignment marks m1 to m6 provided on the substrate P from the -X side to the + X side. Detect in order. As shown in FIG. 11A, when the alignment marks m1 to m6 arranged on the most -X side of the substrate P are detected, the detection is performed using the surface alignment system 40 and the rear surface alignment system 60. .

Since the rear surface alignment system 60 is provided in the stage main body 2A, even when the substrate stage 2 moves, the relative position with the board | substrate P does not change. Detection by the rear alignment system 60 is performed by the four alignment marks m1, m3, m4, and m6 among the six alignment marks m1 to m6 in the rows corresponding to the microscopes 60A to 60F and 60G to 60L, respectively. ) Is performed.

The control device 5 causes the back alignment system 60 to be calibrated using the detection result in the surface alignment system 40 and the detection result in the back alignment system 60. In this case, the control apparatus 5 calculates the deviation of the detection result of the back surface alignment system 60 based on the detection result of the surface alignment system 40, and performs the back surface alignment system 60 based on the calculation result. Correct. Since the surface alignment system 40 performs the measurement process at the time of loading of the board | substrate P, the detection result of the said surface alignment system 40 can be used suitably as a reference value. In the calibration process, the control device 5 corrects the detected value of the backside alignment system 60, for example. Also in the calibration process demonstrated below, it is the same and in this case, the control apparatus 5 becomes a correction | amendment part of the surface alignment system 40 or the back alignment system 60. As shown in FIG.

This calibration includes, for example, obtaining a correction value of the detection result by the backside alignment system 60, and allowing the correction value to be reflected in the detection result of the backside alignment system 60 after the next time. Since the drive control of the substrate stage 2 of the rear alignment system 60 and the calibration of the rear alignment system 60 are performed in parallel, the time for the alignment operation is shortened. The calibration result of the back surface alignment system 60 is memorize | stored in the memory part (not shown) of the control apparatus 5, etc., for example.

After the detection of the alignment marks m1 to m6 on the most -X side is completed, the control device 5 moves the substrate stage 2 back to the -X side, and uses the surface alignment system 40 alone to align the alignment. The rows of marks m1 to m6 are detected in order from the -X side to the + X side. When the control apparatus 5 detects the alignment marks m1 to m6 most disposed on the + X side, as shown in Fig. 11B, both the surface alignment system 40 and the rear surface alignment system 60 are used. To be detected. In this case, the control apparatus 5 makes correction of the back surface alignment system 60 similarly to the above.

Moreover, about the board | substrate P after processing the board | substrate P of the first several acquisitions, alignment marks m1-m6 are detected using only the back surface alignment system 60 (step S4-2).

In this case, for example, as shown in FIG. 12, the control device 5 almost simultaneously with loading the substrate P into the substrate stage 2, by using the backside alignment system 60. The alignment marks m1 to m6 arranged on the most -X side of the substrate and the alignment marks m1 to m6 arranged on the most + X side of the substrate P are detected.

By the alignment of the first purchased substrate P, the calibration information of the backside alignment system 60 is stored and stored in the storage unit of the control device 5. For this reason, when performing alignment of the board | substrate P afterwards, the control apparatus 5 makes it perform the said detection, calibrating the back surface alignment system 60 suitably using the accumulated information.

In step S4-2, since the alignment marks m1 to m6 are detected at substantially the same time as loading the substrate P into the substrate stage 2, the control device 5 moves the substrate stage 2 to the substrate. The detection result may be calculated while moving from the rod position of (P) to the exposure position. In this case, the calculation by the control apparatus 5 is performed before the board | substrate stage 2 reaches an exposure position, and the board | substrate stage 2 is arrange | positioned in the position which reflected the calculation result.

When the processing of one lot is completed, the mask M is exchanged. After the new mask M is loaded into the mask stage 1, the setup process is performed, and the substrate P is loaded, the control apparatus 5 has no first substrate P in step S4. The said step S4-1 is performed, and the said board | substrate P is performed the said step S4-2.

As described above, according to the present embodiment, the rear surface of the alignment marks m1 to m6 located in the predetermined detection regions AL11 to AL16 and AL21 to AL26 among the substrates P loaded on the substrate stage 2. Since the alignment system 60 is provided in the board | substrate stage 2, and the control apparatus 5 which performs the drive control of the board | substrate stage 2 based on the detection result of this back surface alignment system 60 is provided, The alignment marks m1 to m6 can be detected without moving the substrate stage 2, and drive control of the substrate stage 2 can be performed based on the detection result. As a result, the detection operation of the alignment marks m1 to m6 and the driving operation of the substrate stage 2 based on the detection result are performed in a short time, so that the throughput can be improved.

Second Embodiment

Next, a second embodiment of the present invention will be described. In this embodiment, the structure of an illumination optical system and a projection optical system differs from 1st embodiment, and the other structure is the same as that of 1st embodiment. Hereinafter, in this embodiment, it demonstrates centering around difference with 1st Embodiment.

FIG. 13: is a figure which shows the whole structure of the exposure apparatus EX2 which concerns on this embodiment.

The exposure apparatus EX2 projects the image of the pattern of the mask M illuminated with the exposure light EL and the pattern M of the mask M illuminated with the exposure light EL onto the substrate P. The projection system PS2, the substrate stage PST which can hold | maintain and move the board | substrate P, and the control apparatus 110 which control the operation | movement of the whole exposure apparatus EX2 are provided.

The illumination system IS2 includes an ellipsoidal mirror 102, a dichroic mirror 103, a collimated lens 104, a wavelength selective filter 105, a photosensitive filter 106, a condenser lens 107, a light guide fiber ( 108 and illumination optical systems IL11 to IL14.

The luminous flux emitted from the light source (not shown) disposed at the first focal position of the ellipsoidal mirror 102 is a g line (wavelength 436 nm) by the reflective film of the ellipsoidal mirror 102 and the reflective film of the dichroic mirror 103. Light in the wavelength region including the light of the h line (wavelength 405 nm) and the i line (wavelength 365 nm) is taken out and is incident on the collimated lens 104. The light source image is formed at the second focal position of the ellipsoidal mirror 102. The divergent luminous flux from the light source image formed at the second focal position of the ellipsoidal mirror 102 becomes parallel light by the collimating lens 104, and the wavelength selective filter 105 which transmits only the luminous flux in a predetermined exposure wavelength region is provided. It is meant to pass.

The light beam that has passed through the wavelength selective filter 105 passes through the photosensitive filter 106 and is collected by the condenser lens 107 at the incidence end of the incidence hole 108a of the light guide fiber 108. Here, the light guide fiber 108 is, for example, a random light guide fiber configured by randomly tying a plurality of fiber wires, and includes an entrance hole 108a and four exit holes (hereinafter, exit holes 108b, 108c, 108d, and the like). 108e)]. The light beams incident on the entrance hole of the light guide fiber 108 propagate the inside of the light guide fiber 108, and are divided into four exit holes 108b to 108e to emit the light. The divided light is incident on the four partial illumination optical systems IL11 to IL14 which partially illuminate the mask M. As shown in FIG. The illumination optical systems IL11 to IL14 are provided in one row along the Y direction, for example. The light transmitted through the illumination optical systems IL11 to IL14 illuminates the mask M almost uniformly, respectively.

Light from the illumination region of the mask M is incident on the four projection optical systems PL11 to PL14, for example. The projection optical systems PL11 to PL14 are provided in one row along the Y direction, for example, so as to correspond to the illumination region by the illumination optical systems IL11 to IL14. Projection optical systems PL11-PL14 image the pattern image of the mask M on the board | substrate P. FIG. In this embodiment, as projection optical systems PL11-PL14, the magnification projection optical system which expands and forms the pattern image on the mask M on the board | substrate P is used. The projection optical systems PL11 to PL14 are reflection refraction projection optical systems for forming a primary image, which is an enlarged image in the field of view in the mask M, in the upper field of the substrate P.

Moreover, the exposure apparatus EX2 of this embodiment detects the interferometer system 150 which measures the positional information of the board | substrate stage PST, and the alignment mark of the board | substrate P from the back surface similarly to the said embodiment. The rear surface alignment system 160 is provided. Moreover, similarly to 1st Embodiment, the surface alignment system (not shown) which detects the alignment mark of the board | substrate P from the surface side is provided. The structure of the surface alignment system and back surface alignment system 160 which are not shown in figure is the same structure as the structure of the surface alignment system 40 and the back surface alignment system 60 of 1st Embodiment, respectively.

When exposing the board | substrate P using the exposure apparatus EX2, the board | substrate stage PST is reciprocated 1 direction in the X direction, projecting the pattern image of the mask M on a projection area | region, and of the board | substrate P Half of the area is exposed. Therefore, the entirety of the substrate P is exposed by moving the substrate stage PST back and forth in the X direction.

When detecting the alignment mark (not shown) formed in the board | substrate P, when performing only using a surface alignment system, it is necessary to move the board | substrate stage PST one reciprocation extra for alignment mark detection. In contrast, in the present embodiment, the movement of the substrate stage PST can be omitted by one round trip by detecting the alignment mark of the substrate P using the backside alignment system 160. As a result, the throughput can be improved.

The technical scope of this invention is not limited to the said embodiment, A change can be suitably added in the range which does not deviate from the meaning of this invention.

For example, in the said embodiment, the back surface alignment system 60 corresponding to the area | region where the alignment marks m1-m6 along the two opposite sides of the + X side edge part and -X side edge part of the board | substrate P are arrange | positioned. ), But the configuration is not limited thereto. For example, as shown in FIG. 14, you may be set as the structure which arrange | positions the rear surface alignment system 60 in the part corresponding to the area | region where the alignment marks m1-m6 of the X direction center part of the board | substrate P are arrange | positioned. .

In addition, in the said embodiment, although alignment marks m1-m6 were provided in the board | substrate P, and it was set as the structure which detects the alignment marks m1-m6 with the back surface alignment system 60, it is limited to this. It is not. For example, instead of the alignment marks m1 to m6, a portion near the substrate P may be detected.

In addition, in the said embodiment, although the example which correct | amends the back surface alignment system 60 was demonstrated by simultaneously detecting alignment marks m1-m6 in the surface alignment system 40 and the back surface alignment system 60, this was demonstrated. It is not limited to. For example, as shown in FIG. 15A, the rear surface alignment system 60 has the slit 67 for surface projection between the light source 61 and the mirror 63, and the light through the said surface projection slit 67 is provided. It is good also as a structure projected on this board | substrate stage 2. As shown in FIG.

In this case, as shown to FIG. 15B, the control apparatus 5 detects the index | projection projected from the back surface alignment system 60 to the surface alignment system 40, and based on a detection result of the back surface alignment system 60 Calibration can be done. Thereby, since the back surface alignment system 60 can be correct | amended before the board | substrate P is arrange | positioned at the board | substrate holding part 16, time required for alignment processing can be shortened more.

In addition, when the alignment marks m1 to m6 are detected by the backside alignment system 60, the indicators are projected onto the substrate P, and the alignment marks m1 to m6 based on the indicators can be detected. The detection of higher precision becomes possible. The control apparatus 5 may make it detect the said indicator also in the surface alignment system 40. FIG. In addition, you may install the structure similar to the slit 67 for surface-projection in the surface alignment system 40. In this case, the substrate stage 2 may be moved in the Z direction in order to match the focus on the pattern.

In addition, in the said embodiment, although it was set as the structure which uses the light-receiving device 46 when measuring the base line quantity, it is not limited to this, For example, as shown in FIG. 16, the back surface alignment system 60 is It is good also as a structure which measures the base line quantity using it. In this configuration, the substrate stage 2 is moved so that the optical axis of the marks Ma and the microscopes 60A to 60F or the microscopes 60G to 60L coincide with each other when the base line amount is measured. Through the pattern image is detected by the microscope (60A to 60F, 60G to 60L). As light irradiated to the mark Ma, it may be light of the light source provided in the back surface alignment system 60, and it may be exposure light similarly to the said embodiment. When using exposure light, microscope 60A-60F and 60G-60L which can also detect the wavelength range of this exposure light are used. In this case, the substrate stage 2 may be moved in the Z direction in order to match the focus on the pattern.

In addition, in the said embodiment, although the example which made the control apparatus 5 perform the drive control of the board | substrate stage 2 using the detection result of the back surface alignment system 60 was demonstrated, it is not limited to this, YES For example, the control apparatus 5 may be made to calibrate the projection optical systems PL1-PL7 using the detection result, for example.

In addition, arrangement | positioning of the detection area of the surface alignment system 40 and the detection area of the back surface alignment system 60 is not limited to the example shown in the said embodiment. For example, as shown in FIGS. 17A to 17E, the detection region 400 of the surface alignment system 40 and the detection region 600 of the back alignment system 60 are exposed. It can set suitably by arrangement | positioning of area | region PA. In addition, it is not necessary to always match detection area 400 and detection area 600, for example, it does not matter whether a detection area mutually shifts | deviates, or the number of detection areas may differ.

Fig. 17A shows an example in the case where six scans are performed with six chamfers. 17B shows an example in the case of performing four scans with eight chamfers. FIG. 17C shows an example in the case where six scans are performed with 12 chamfers. FIG. 17D shows an example in the case where six scans are performed with 18 chamfers. Fig. 17E shows an example in the case of performing nine scans with 15 chamfers. In each case, the detection area 400 and the detection area 600 are alternately shown in order to make it easier to discriminate the city. For example, the detection area 400 and the detection area 600 may overlap. .

In addition, in the said embodiment, when the surface alignment system 40 and the back alignment system 60 were correct | amended, the control apparatus 5 demonstrated and demonstrated the example which corrects the detection value in each alignment system. It is not limited to this, For example, the surface alignment system 40 and the back alignment system 60 attach the actuator for position adjustment which is not shown in figure, and the control apparatus 5 drives the actuator, and the surface alignment system ( The position of 40 and back alignment system 60 may be corrected.

In addition, as the board | substrate P of embodiment mentioned above, not only the glass substrate for display devices but the semiconductor wafer for semiconductor device manufacture, the ceramic wafer for thin film magnetic heads, or the original plate of the mask or reticle used by an exposure apparatus (synthetic quartz) , Silicon wafer) and the like.

Moreover, as an exposure apparatus, the scanning type of the step-and-scan system which scan-exposes the board | substrate P with the exposure light EL through the pattern of the mask M by moving the mask M and the board | substrate P synchronously. In addition to the exposure apparatus (scanning stepper), the step-and-repeat type projection in which the pattern of the mask M is collectively exposed in a state where the mask M and the substrate P are stopped and the substrate P is sequentially moved in steps is provided. It can also be applied to an exposure apparatus (stepper).

The present invention is also applicable to a twin stage type exposure apparatus having a plurality of substrate stages, such as those disclosed in the specifications of US Pat. No. 634,1007, US Pat. No. 6,264,073, US Pat. .

In addition, the present invention provides a substrate stage for holding a substrate, such as disclosed in US Patent No. 6897963, European Patent Application Publication No. 1713113, and the like; Or it can apply also to the exposure apparatus provided with the measurement stage in which the various photoelectric sensor was mounted. Moreover, the exposure apparatus provided with the some board | substrate stage and the measurement stage can be employ | adopted.

In addition, in the above-mentioned embodiment, although the light transmissive mask which formed the predetermined light shielding pattern (or phase pattern and photosensitive pattern) was used on the light transmissive board | substrate, US Pat. No. 6778257, for example. As disclosed in the specification, a variable shaping mask (also referred to as an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used. . In addition, a pattern forming apparatus including a self-luminous type image display element may be provided instead of the variable shaping mask provided with the non-luminous type image display element.

The exposure apparatus of the above-mentioned embodiment is manufactured by assembling various subsystems containing each component so that predetermined mechanical precision, electrical precision, and optical precision may be maintained. In order to secure these various accuracy, before and after this assembly, adjustment for achieving optical precision for various optical systems, adjustment for achieving mechanical precision for various mechanical systems, and electrical precision for various electric systems Adjustment is made.

The assembling process from the various subsystems to the exposure apparatus includes mechanical connection, wiring connection of electric circuits, piping connection of a pneumatic circuit, and the like among various subsystems. It goes without saying that there is an assembling step for each of the subsystems before the assembling step from these various subsystems to the exposure apparatus. If the assembly process to the exposure apparatus of various subsystems is complete | finished, comprehensive adjustment is performed and the various precision as the whole exposure apparatus is ensured. The manufacturing of the exposure apparatus is preferably performed in a clean room where temperature, cleanliness, etc. are managed.

As shown in FIG. 18, a micro device such as a semiconductor device includes a step (201) of performing a function and performance design of a micro device, a step (202) of producing a mask (reticle) based on the design step, and a description of the device. In step 203 of manufacturing a substrate, according to the above-described embodiment, a substrate treatment (exposure treatment) comprising exposing the substrate with exposure light using a pattern of a mask and developing the exposed substrate (photosensitive agent) is performed. And a substrate processing step 204, a device assembly step (including a dicing process, a bonding process, a package process, and the like) 205, an inspection step 206, and the like. Further, in step 204, developing a photosensitive agent includes forming an exposure pattern layer (layer of developed photosensitive agent) corresponding to the pattern of the mask, and processing the substrate through the exposure pattern layer.

In addition, the requirement of embodiment mentioned above and a modification can be combined suitably. In addition, some components may not be used. In addition, as long as it is permitted by the law, all the publications concerning the exposure apparatus etc. which were quoted in the above-mentioned embodiment and the modification, etc., and the indication of a US patent are used as a part of description of a main text.

EX, EX2: Exposure device
M: Mask
P: Substrate
1: mask stage
2, PST: substrate stage
5, 110: control unit
40: surface alignment system
43: reference member
46: light receiving device
60, 160: backside alignment system
67: slit for surface projection

Claims

An exposure apparatus for exposing a substrate,
A stage moving with an arrangement in which the substrate is disposed;
A detection unit provided at the stage and detecting a portion of the substrate disposed in the placement unit located in a predetermined region of the placement unit;
And a control unit which controls driving of the stage based on the detection result of the detection unit.

The exposure apparatus according to claim 1, wherein the detection unit detects the substrate from the placement unit side with respect to the substrate.

The said predetermined area | region contains a several detection area | region,
The placement portion is set to a rectangle,
At least one portion of the plurality of detection regions includes one of two opposite sides of the placement portion.

The exposure apparatus according to claim 3, wherein at least part of the plurality of detection regions is set between the two opposite sides.

The second detection unit according to any one of claims 1 to 4, wherein the second detection unit is provided at a position different from the stage, and detects the substrate disposed on the placement unit.
The control unit performs drive control of the stage based on the detection result by the detection unit and the detection result by the second detection unit.

The method according to claim 5, further comprising a calibration unit for calibrating the detection unit based on the detection result of the second detection unit,
The second detection unit detects a portion located in at least the predetermined area of the substrate disposed in the placement unit.

The method according to any one of claims 1 to 6,
A light irradiation unit for irradiating light to the predetermined area;
A photodetector provided at a position different from the stage and detecting light irradiated to the predetermined area;
And a second calibration unit for calibrating the detection unit in accordance with the detection result by the light detection unit.

The projection optical system according to any one of claims 5 to 7, further comprising a projection optical system for projecting a pattern image onto the substrate disposed on the placement portion,
The second detection unit is disposed at a position determined with respect to the projection optical system.

9. The apparatus of claim 8, further comprising: a third detection unit provided on the stage and including a reference member to detect the pattern image projected by the projection optical system, based on the reference member,
The control unit performs drive control of the stage based on detection results of the detection unit, the second detection unit, and the third detection unit.

The exposure apparatus according to claim 9, further comprising a third calibration unit for calibrating the second detection unit based on a detection result of the third detection unit.

The exposure apparatus according to any one of claims 8 to 10, wherein the detection unit detects the pattern image.

The exposure apparatus according to any one of claims 8 to 11, further comprising a fourth calibration unit for calibrating the projection optical system based on a detection result of the detection unit.

The exposure apparatus according to any one of claims 8 to 12, wherein the pattern image is an enlarged image.

As an exposure method for exposing a substrate,
An arranging step of arranging the substrate in an arranging portion of a stage;
A detection step of detecting a portion located in a predetermined region of the placement portion of the substrate by using a detection portion provided in the stage;
A drive control step of performing drive control of the stage based on a detection result of the detector;
Exposure method comprising a.

The exposure method according to claim 14, wherein the detecting step includes detecting the substrate from the placement side with respect to the substrate.

The method according to claim 14 or 15, wherein the predetermined area includes a plurality of detection areas,
The placement portion is formed in a rectangle,
At least one portion of the plurality of detection regions includes one of two opposite sides of the placement portion.

The exposure method according to any one of claims 14 to 16, wherein the drive control step includes moving the stage to an exposure start position while performing an operation based on a detection result in the detection step. .

18. The method according to any one of claims 14 to 17, further comprising a second detection step of detecting the substrate disposed in the placement portion by using a second detection portion provided at a different position from the stage,
And the drive control step performs drive control of the stage based on the detection result in the detection step and the detection result in the second detection step.

19. The method of claim 18, further comprising a calibration step of configuring the detection unit based on the detection result in the second detection step,
The second detecting step is to detect a portion located in at least the predetermined region of the substrate disposed in the placement portion.

The method according to any one of claims 14 to 19,
A light irradiation step of irradiating light to the predetermined area;
A photodetection step of detecting light irradiated to the predetermined area using a photodetector provided at a position different from the stage;
And a second calibration step of calibrating the detector according to the detection result of the photodetection step.

21. The projection optical system according to any one of claims 18 to 20, further comprising a projection optical system for projecting a pattern image onto the substrate disposed on the placement portion,
The second detection step is performed in a state in which the second detection unit is disposed at a position determined with respect to the projection optical system.

The method of claim 21,
A projection step of projecting the pattern image onto the substrate using the projection optical system;
A third detection step provided on the stage, including a reference member, and detecting the pattern image projected in the projection step with reference to the reference member,
And the drive control step performs drive control of the stage based on the detection results in the detection step, the second detection step and the third detection step.

23. The exposure method according to claim 22, further comprising a third calibration step of constructing the second detection part based on the detection result in the third detection step.

24. The method according to claim 22 or 23, further comprising: a fourth detection step of detecting the pattern image by using the detection unit;
And a fourth calibration step of calibrating the projection optical system in accordance with the detection result in the fourth detection step.

The exposure method according to any one of claims 21 to 24, wherein the pattern image is an enlarged image.

Using the exposure apparatus according to any one of claims 1 to 13, exposing the substrate to which the photosensitive agent is applied, and transferring the pattern onto the substrate;
Developing the photosensitive agent exposed by the exposure to form an exposure pattern layer corresponding to the pattern;
Processing the substrate through the exposure pattern layer
Device manufacturing method comprising a.