KR102096961B1 - Display panel manufacturing method - Google Patents

Abstract

Provided is a substrate processing apparatus, a device manufacturing method, and a mask capable of producing a high quality substrate with high productivity. A mask support member supporting a pattern of a mask so as to follow the first surface curved in a cylindrical shape at a predetermined curvature in the illumination area, and a substrate support member supporting the substrate so as to follow a predetermined second surface in the projection area And a driving mechanism for rotating the mask support member so that the pattern of the mask moves in the predetermined scanning exposure direction, and also moving the substrate support member so that the substrate moves in the scanning exposure direction, the mask support member comprising: When the diameter of the surface is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, 1.3 ≤ L / φ ≤ 3.8 is satisfied.

Description

Display panel manufacturing method {DISPLAY PANEL MANUFACTURING METHOD}

The present invention relates to a substrate processing apparatus for projecting a pattern of a mask onto a substrate and exposing the pattern to the substrate, a device manufacturing method, and a cylindrical mask used therein.

2. Description of the Related Art There are device manufacturing systems for manufacturing various devices such as semiconductors and display devices such as liquid crystal displays. The device manufacturing system is equipped with a substrate processing apparatus such as an exposure apparatus. The substrate processing apparatus described in Patent Literature 1 projects an image of a pattern formed on a mask disposed in an illumination region, a substrate disposed in a projection region, or the like, and exposes the pattern on the substrate. The mask used for the substrate processing apparatus includes a flat shape, a cylindrical shape, and the like.

Patent Document 1: Japanese Patent Publication No. 2007-299918

The substrate processing apparatus can continuously expose the substrate by making the mask cylindrical and rotating the mask. Further, as the substrate processing apparatus, there is also a roll-to-roll method in which the substrate is continuously elongated into a sheet-like shape and continuously sent under the projection area. As described above, the substrate processing apparatus can continuously transport both the substrate and the mask by rotating the cylindrical mask and using a roll-to-roll method as a method for transporting the substrate.

Here, the substrate processing apparatus is usually required to expose a pattern to a substrate efficiently and to improve productivity. The same applies to the case of using a cylindrical mask as a mask.

It is an object of the present invention to provide a substrate processing apparatus, a device manufacturing method and a cylindrical mask capable of producing a high quality substrate with high productivity.

According to the first aspect of the present invention, the light beam from the pattern of the mask disposed in the illumination area of the illumination light is projected into the projection area in which the substrate is disposed, and in a cylindrical shape at a predetermined curvature in the illumination area The mask support member supporting the pattern of the mask to follow the curved first surface, the substrate support member supporting the substrate to follow the predetermined second surface in the projection area, and the pattern of the mask are predetermined A driving mechanism is provided to rotate the mask supporting member to move in the scanning exposure direction, and to move the substrate supporting member so that the substrate moves in the scanning exposure direction. The mask supporting member has a diameter of the first surface as φ. , When the length of the first surface in the direction orthogonal to the scanning exposure direction is L, a substrate processing apparatus of 1.3 ≤ L / φ ≤ 3.8 is provided.

According to a second aspect of the present invention, there is provided a device manufacturing method comprising forming the pattern of the mask on the substrate using the substrate processing apparatus according to the first aspect and supplying the substrate to the substrate processing apparatus. do.

According to a third aspect of the present invention, a mask pattern for an electronic device is formed along a cylindrical outer circumferential surface and is a cylindrical mask rotatable around a center line, wherein the outer circumferential surface has a diameter of φ and a length in the direction of the center line of the outer circumferential surface. When L is the maximum length in the direction of the center line of the mask pattern that can be formed on the outer circumferential surface of the cylindrical substrate with L being L, in the range of L≤La, the ratio of the diameter φ to the length L A cylindrical mask in which L / φ is set in a range of 1.3 ≦ L / φ ≦ 3.8 is provided.

According to a fourth aspect of the present invention, a mask pattern is formed along a cylindrical surface of a predetermined radius from a predetermined center line, and is a cylindrical mask rotatably mounted around the center line, mounted on the exposure apparatus, wherein the cylindrical surface has a long side dimension. A rectangular mask area for a display panel including a display screen area having Ld, a short-side dimension Lc, and an aspect ratio Asp of Ld / Lc and a peripheral circuit area provided adjacent to the periphery of the cylindrical surface is provided in the main direction (周 方向), the spacing Sx is formed, and n (n≥2) are arranged in a row, and the dimension L in the long longitudinal direction of the mask area is e1 times (e1≥1) of the long side dimension Ld of the display screen area, the When the dimension in the short length direction of the mask area is e2 times (e2≥1) of the short side dimension Lc of the display screen area, the length in the direction of the center line of the cylindrical surface is set to the dimension L or more, Prize When the diameter of the cylindrical surface is φ and the circumference is π, πφ = n (e2 · Lc + Sx) is set, and furthermore, the ratio L / φ between the dimension L and the diameter φ is 1.3≤L / φ≤3.8 In order to be within the range, a cylindrical mask is provided in which the diameter φ, the number n, and the spacing Sx are set.

According to the aspect of the present invention, high productivity is obtained by setting the relationship between the diameter φ and the length L of the cylindrical surface-shaped mask shape held by the mask support member or the pattern formed on the mask as in the above range. The device pattern can be efficiently exposed or transferred. In addition, by making the relationship between the diameter φ and the length L equal to the above-mentioned range, a panel having various display sizes can also be used in the case of multiple chamfers in which a plurality of display panel patterns are arranged along the main surface of the cylindrical mask. Can be efficiently arranged.

1 is a diagram showing the overall configuration of a device manufacturing system according to the first embodiment.
2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment.
3 is a view showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in FIG. 2.
4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.
It is a figure which shows the state of the illumination light beam irradiated to the cylindrical mask, and the state of the projection light beam generated from the cylindrical mask.
6 is a perspective view showing a schematic configuration of a cylindrical drum and a mask constituting a cylindrical mask.
7 is an exploded view showing an arrangement example in a case where a mask for a display panel is chamfered on a mask surface of a cylindrical mask.
8 is an exploded view showing an arrangement example in which three masks of the same size are arranged in a row on a mask surface of a cylindrical mask, and three chamfering is performed.
9 is an exploded view showing an arrangement example in which four masks of the same size are arranged in a row on a mask surface of a cylindrical mask, and four chamfering is performed.
10 is an exploded view showing an arrangement example in which four masks are chamfered in two rows and two columns on the mask surface of the cylindrical mask.
11 is a developed view for explaining an arrangement example of two chamfers of a mask for a display panel having an aspect ratio of 2: 1.
12 is a graph simulating the relationship between the diameter of the cylindrical mask and the exposure slit width under a specific allowable defocus amount.
13 is a developed view showing a specific example in the case of chamfering a mask for a 60-inch display panel.
14 is a developed view showing an example of the arrangement of two chamfers of the mask.
15 is a developed view showing a first arrangement example of two chamfers of a mask for a 32-inch display panel.
16 is a developed view showing a second arrangement example of two chamfers of a mask for a 32-inch display panel.
17 is a developed view showing a specific example in the case of chamfering a mask for a 32-inch display panel.
18 is a developed view showing a specific arrangement example of three chamfers of a mask for a 32-inch display panel.
19 is a developed view showing a specific arrangement example of three chamfers of a mask for a 37-inch display panel.
20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment.
21 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the third embodiment.
22 is a flow chart showing a device manufacturing method using a device manufacturing system.

EMBODIMENT OF THE INVENTION The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and substantially the same. Moreover, the components described below can be appropriately combined. In addition, various omissions, substitutions, or changes of components can be made without departing from the gist of the present invention. For example, the following embodiments are described as a case of manufacturing a flexible display as a device, but are not limited to this. As the device, a wiring substrate on which a wiring pattern by copper foil or the like is formed, a substrate on which a number of semiconductor elements (transistors, diodes, etc.) are formed, or the like can also be manufactured.

[First Embodiment]

In the first embodiment, a substrate processing apparatus that performs exposure processing on a substrate is an exposure apparatus. In addition, the exposure apparatus is assembled in a device manufacturing system that manufactures a device by performing various treatments on a substrate after exposure. First, a device manufacturing system will be described.

<Device manufacturing system>

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment. The device manufacturing system 1 shown in FIG. 1 is a line for manufacturing a flexible display as a device (flexible display manufacturing line). Examples of the flexible display include an organic EL display and the like. The device manufacturing system 1 sends the substrate P from the supply roll FR1 in which the flexible substrate P is wound in a roll shape, and with respect to the delivered substrate P After various treatments are continuously performed, the substrate P after treatment is a so-called roll-to-roll method, which is wound on a recovery roll FR2 as a flexible device. In the device manufacturing system 1 of 1st Embodiment, the board | substrate P which is a film-like sheet is sent out from the supply roll FR1, and the board | substrate P sent out from the supply roll FR1 is sequentially, An example is shown until it is wound up on the recovery roll FR2 through n processing units U1, U2, U3, U4, U5, ..., Un. First, the substrate P to be processed in the device manufacturing system 1 will be described.

As the substrate P, for example, a foil (foil) made of a metal or alloy such as a resin film or stainless steel is used. As the material of the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, It contains one or more of vinyl acetate resins.

It is preferable that the substrate P has a thermal expansion coefficient that is not remarkably large so that, for example, the amount of deformation due to heat received in various processes performed on the substrate P can be substantially neglected. The thermal expansion coefficient may be set to be smaller than a threshold value depending on the process temperature or the like, for example, by mixing the inorganic filler with the resin film. The inorganic filler may be titanium oxide, zinc oxide, alumina, silicon oxide, or the like, for example. Further, the substrate P may be a single-layered body made of a very thin glass having a thickness of about 100 µm manufactured by a float method or the like, or a laminate formed by bonding the above resin film, foil or the like to this very thin glass. good.

The board | substrate P comprised in this way becomes a roll FR1 for supply by winding in roll shape, and this roll FR1 for supply is attached to the device manufacturing system 1. The device manufacturing system 1 equipped with the supply roll FR1 repeatedly performs various processes for manufacturing one device for the substrate P sent out from the supply roll FR1. For this reason, the board | substrate P after processing is in the state where several devices were connected. That is, the board | substrate P sent out from the supply roll FR1 is a multi-faceted board | substrate. Further, the substrate P is modified and activated by a predetermined pre-treatment in advance, or a fine partition structure (irregularity structure) for precise patterning on the surface is imprinted. It may be formed by, for example.

The board | substrate P after processing is recovered as roll FR2 for collection | recovery by winding in roll shape. The recovery roll FR2 is attached to a dicing apparatus (not shown). The dicing apparatus equipped with the recovery roll FR2 is made into a plurality of devices by dividing (dicing) the substrate P after processing for each device. The dimensions of the substrate P are, for example, about 10 cm to 2 m in the width direction (direction of short axis), and of 10 m or more in the lengthwise direction (direction of long length). to be. Moreover, the dimension of the board | substrate P is not limited to the above-mentioned dimension.

In Fig. 1, the X-direction, Y-direction and Z-direction are orthogonal coordinate systems. The X direction is a direction in which the supply roll FR1 and the recovery roll FR2 are connected in a horizontal plane, and is a left-right direction in FIG. 1. The Y direction is a direction orthogonal to the X direction in a horizontal plane, and is a front-rear direction in FIG. 1. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a vertical direction, and is a vertical direction in FIG. 1.

The device manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P, and processing devices U1 to Un that perform various processing on the substrate P supplied by the substrate supply device 2. ), The substrate recovery apparatus 4 for recovering the substrate P processed by the processing apparatuses U1 to Un, and the upper control apparatus 5 for controlling each apparatus of the device manufacturing system 1. Be equipped.

The substrate supply apparatus 2 is rotatably mounted with a supply roll FR1. The board | substrate supply apparatus 2 is the drive roller DR1 which sends out the board | substrate P from the attached supply roll FR1, and the edge position which adjusts the position of the board | substrate P in the width direction (Y direction). It has a controller (EPC1). The driving roller DR1 rotates while supporting both sides of the front and back sides of the substrate P, thereby discharging the substrate P in the conveying direction from the supply roll FR1 to the recovery roll FR2. (P) is supplied to the processing apparatuses U1 to Un. At this time, the edge position controller EPC1 is such that the position at the end (edge) in the width direction of the substrate P is within the range of about ± 10 μm from the range of about ± 10 μm with respect to the target position. (P) is moved in the width direction to correct the position of the substrate P in the width direction.

The roll FR2 for recovery is rotatably mounted to the substrate recovery apparatus 4. The board | substrate recovery apparatus 4 is the drive roller DR2 which pulls the board | substrate P after a process to the recovery roll FR2 side, and the edge position which adjusts the position of the board | substrate P in the width direction (Y direction). It has a controller (EPC2). The substrate recovery device 4 rotates while supporting the front and rear surfaces of the substrate P with the drive roller DR2 interposed therebetween, and pulls the substrate P in the conveying direction, and recovers the roll FR2. By rotating, the board | substrate P is wound up. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1, and in the width direction of the substrate P, so that the end portion (edge) in the width direction of the substrate P is not disturbed in the width direction. Correct the location of

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, photoresist, photosensitive silane coupling material (photosensitive lyophilic modifier, photosensitive plated reducing material, etc.), UV curing resin liquid, or the like is used. The processing apparatus U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the transport direction of the substrate P. The coating mechanism Gp1 has a cylinder roller R1 on which the substrate P is wound, and a coating roller R2 facing the cylinder roller R1. The coating mechanism Gp1 supports the substrate P sandwiched by the cylinder roller R1 and the application roller R2 while the supplied substrate P is wound around the cylinder roller R1. Then, the application mechanism Gp1 applies the photosensitive functional liquid by the application roller R2 while moving the substrate P in the conveying direction by rotating the cylinder roller R1 and the application roller R2. The drying mechanism Gp2 blows out drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P on which the photosensitive functional liquid is applied. A photosensitive functional layer is formed on (P).

The processing apparatus U2 allows the substrate P conveyed from the processing apparatus U1 to a predetermined temperature (for example, about 10 to 120 ° C) to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is a heating device for heating. The processing apparatus U2 is provided with the heating chamber HA1 and the cooling chamber HA2 in order from the upstream side in the conveyance direction of the substrate P. In the heating chamber HA1, a plurality of rollers and a plurality of air turn bars are provided therein, and the plurality of rollers and the plurality of air turn bars constitute a transport path of the substrate P. The plurality of rollers are provided in rolling contact with the back surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. The plurality of rollers and the plurality of air turnbars are arranged to be serpentine, meandering conveyance paths so as to lengthen the conveyance path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a meandering transport path. The cooling chamber HA2 cools the substrate P to the environmental temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the environmental temperature of the post-process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers therein, and the plurality of rollers are arranged in a meander-shaped transfer path so as to lengthen the transfer path of the substrate P, similarly to the heating chamber HA1. It is done. The substrate P passing through the cooling chamber HA2 is cooled while being conveyed along a meandering conveyance path. On the downstream side in the conveyance direction of the cooling chamber HA2, a driving roller DR3 is provided, and the driving roller DR3 rotates while supporting and sandwiching the substrate P that has passed through the cooling chamber HA2, The substrate P is supplied toward the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a circuit or wiring for a display to a substrate (photosensitive substrate) P provided with a photosensitive functional layer on the surface supplied from the processing apparatus U2 It is an exposure apparatus. Although the details will be described later, the processing apparatus U3 illuminates the illumination light flux on the reflective cylindrical mask M (cylindrical drum 21), and substrates the projection light flux obtained by reflecting the illumination light flux by the mask M (P) is projected and exposed. The processing apparatus U3 adjusts the position of the drive roller DR4 which sends the board | substrate P supplied from the processing apparatus U2 to the downstream side of a conveyance direction, and the width direction (Y direction) of the board | substrate P. It has an edge position controller (EPC3). The driving roller DR4 rotates while supporting the front and rear sides of the substrate P between them, and rotates the substrate P to the downstream side in the conveying direction, thereby stably supporting the substrate P at the exposure position. It is supplied toward (substrate support drum) 25. The edge position controller EPC3 is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position.

Moreover, the processing apparatus U3 has the buffer part DL which has two sets of drive rollers DR6 and DR7 which sends the board | substrate P to the downstream side of a conveyance direction, in the state which gave the stretched to the board | substrate P after exposure. I have it. The two sets of drive rollers DR6 and DR7 are arranged at predetermined intervals in the conveying direction of the substrate P. The driving roller DR6 rotates by sandwiching the upstream side of the substrate P to be conveyed therebetween, and the driving roller DR7 rotates by supporting and rotating the downstream side of the substrate P conveyed therebetween, The substrate P is supplied toward the processing apparatus U4. At this time, since the sagging is given to the substrate P, the fluctuation in the conveying speed generated at the downstream side in the conveying direction can be absorbed than the drive roller DR7, and the substrate P due to the fluctuation in the conveying speed It is possible to insulate the influence of the exposure treatment to. Further, in the processing apparatus U3, the image and the substrate P of a part of the mask pattern of the cylindrical mask M (hereinafter, simply referred to as 'mask M') are relatively positioned ( For alignment), alignment microscopes AMG1 and AMG2 for detecting alignment marks previously formed on the substrate P or reference patterns formed on a part of the outer peripheral surface of the rotating drum (substrate support drum) 25 are provided.

The processing apparatus U4 is a wet processing apparatus that performs development processing by wet, electroless plating processing, and the like on the substrate P after exposure conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 layered in the vertical direction (Z direction) and a plurality of rollers for conveying the substrate P therein. The plurality of rollers are arranged such that the insides of the three treatment tanks BT1, BT2, BT3 are transport paths through which the substrate P passes in order. On the downstream side in the conveyance direction of the processing tank BT3, a driving roller DR8 is provided, and the driving roller DR8 rotates while supporting and sandwiching the substrate P that has passed through the processing tank BT3, The substrate P is supplied toward the processing apparatus U5.

Although not shown, the processing device U5 is a drying device for drying the substrate P conveyed from the processing device U4. The processing apparatus U5 removes droplets adhering to the substrate P wet-processed by the processing apparatus U4 and adjusts the moisture content of the substrate P. The board | substrate P dried by the processing apparatus U5 is further conveyed to the processing apparatus Un via several processing apparatuses. And after being processed by the processing apparatus Un, the board | substrate P is wound up on the recovery roll FR2 of the board | substrate recovery apparatus 4.

The upper level control device 5 collectively controls the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The upper level control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to convey the substrate P from the substrate supply device 2 to the substrate recovery device 4. Further, the upper level control device 5 controls the plurality of processing devices U1 to Un while synchronizing the transfer of the substrate P, and executes various processes for the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. 2 to 5. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. 3 is a view showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in FIG. 2. 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2. It is a figure which shows the state of the illumination light beam irradiated to a mask, and the projection light beam emitted from a mask.

The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and an image of a mask pattern formed on the outer circumferential surface of the cylindrical mask M while conveying the substrate P in the conveying direction is a substrate ( Projection exposure is performed on the surface of P). 2, the X-direction, the Y-direction, and the Z-direction are orthogonal coordinate systems which are orthogonal, and are the same orthogonal coordinate systems as in FIG.

First, the mask M (cylindrical mask M in FIG. 1) used in the exposure apparatus U3 will be described. The mask M is, for example, a reflective mask using a metal cylindrical body. The pattern of the mask M is formed in the cylindrical base material which has the outer peripheral surface (circular surface) which becomes the radius of curvature Rm centering on the 1st axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface (first surface) P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high-reflection portion that reflects the light flux in a predetermined direction with high efficiency, and a reflection suppression portion (low-reflection portion) that does not reflect the light flux in a predetermined direction or reflects with low efficiency. The mask pattern is formed by a high reflection portion and a reflection suppression portion. Here, the reflection suppression unit may be provided with less light reflected in a predetermined direction. For this reason, the reflection suppressing portion can be formed of a material that absorbs light, a material that transmits light, or a material that diffracts light in a specific direction. As the exposure device U3, a mask made of a cylindrical base material of metal such as aluminum or SUS can be used as the mask M of the above-described configuration. For this reason, the exposure apparatus U3 can perform exposure using an inexpensive mask.

Further, the mask M may be formed entirely or partially of a panel pattern corresponding to one display device, or a panel pattern corresponding to a plurality of display devices may be formed. In addition, the mask M has a multi-faceted, or small-sized panel pattern in which a plurality of panel patterns are repeatedly formed in a circumferential direction around the first axis AX1, or the first axis AX1. ) May be formed by repeating in a direction parallel to the polyhedron. Moreover, the mask M may be a multi-faceted chamfer of a pattern for a panel of the first display device and a pattern for a panel of the second display device having a size different from that of the first display device. Moreover, the mask M should just have the circumferential surface which becomes the radius of curvature Rm centering on the 1st axis AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be an arc-shaped plate material having a circumferential surface. Moreover, the mask M may be in the form of a thin plate, or the thin plate-shaped mask M may be curved to have a circumferential surface.

Next, the exposure apparatus U3 shown in FIG. 2 is demonstrated. The exposure apparatus U3 includes the above-described driving rollers DR4, DR6, and DR7, the substrate support drum 25, the edge position controller EPC3, and the alignment microscopes AMG1 and AMG2, as well as the mask holding mechanism 11, It has a substrate support mechanism 12, an illumination optical system IL, a projection optical system PL, and a lower control device 16. The exposure apparatus U3 is provided with the illumination light emitted from the light source apparatus 13 through the illumination optical system IL and a part of the projection optical system PL, and the mask holding drum 21 of the mask holding mechanism 11 ( Hereinafter, the projection light flux irradiated to the mask surface P1 on which the pattern of the mask M supported by the 'cylindrical drum 21' is formed and reflected from the mask surface P1 of the mask M ( The imaging light) is projected onto the substrate P supported by the substrate supporting drum 25 of the substrate supporting mechanism 12 via the projection optical system PL.

The lower control device 16 controls each part of the exposure apparatus U3, and executes processing for each part. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. Moreover, the lower control device 16 is controlled by the upper control device 5, and may be a separate device from the upper control device 5. The lower control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a cylindrical drum 21 for holding the mask M, and a first drive unit 22 for rotating the cylindrical drum 21. The cylindrical drum 21 holds the mask M so as to be a cylinder having a radius of curvature Rm centering around the first axis AX1 of the mask M as a rotation center. The first drive unit 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 about the first axis AX1 about the rotation.

Moreover, although the cylindrical drum 21 of the mask holding mechanism 11 directly formed the mask pattern in the high reflection part and the low reflection part on the outer peripheral surface, it is not limited to this structure. The cylindrical drum 21 as the mask holding mechanism 11 may be wound around and holds a thin plate-shaped reflective mask M along its outer circumferential surface. Further, the cylindrical drum 21 as the mask holding mechanism 11 may have a plate-shaped reflective mask M, which is a radius Rm in advance and curved in a circular arc shape, to be detachably attached to the outer peripheral surface of the cylindrical drum 21.

The substrate support mechanism 12 includes a substrate support drum 25 for supporting the substrate P, a second drive unit 26 for rotating the substrate support drum 25, and a pair of air turnbars ATB1 and ATB2 Wow, it has a pair of guide rollers 27 and 28. The substrate supporting drum 25 is formed in a cylindrical shape having an outer circumferential surface (circumferential surface) which is a radius of curvature Rp about the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the surface passing through (including) the first axis AX1 and the second axis AX2 is the central surface CL. Doing. A part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. That is, the substrate support drum 25 is stably supported by bending the substrate P in the shape of a cylindrical surface by winding the substrate P on the support surface P2. The 2nd drive part 26 is connected to the lower control apparatus 16, and rotates the board | substrate support drum 25 about the 2nd axis AX2 about a rotation center. A pair of air turnbars (ATB1, ATB2) and a pair of guide rollers (27, 28) are provided on the upstream side and the downstream side in the conveyance direction of the substrate P with the substrate supporting drum 25 interposed therebetween. . The guide roller 27 guides the substrate P conveyed from the drive roller DR4 to the substrate support drum 25 via the air turn bar ATB1, and the guide roller 28 guides the substrate support drum 25 ), The substrate P conveyed from the air turn bar ATB2 is guided to the driving roller DR6.

The board | substrate support mechanism 12 rotates the board | substrate support drum 25 by the 2nd drive part 26, and the board | substrate P introduce | transduced into the board | substrate support drum 25 is supported surface of the board | substrate support drum 25 While supporting at (P2), it is sent in a long direction (X direction) at a predetermined speed.

At this time, the lower control device 16 connected to the first drive unit 22 and the second drive unit 26 synchronizes the cylindrical drum 21 and the substrate support drum 25 at a predetermined rotational speed ratio. , The projection image of the mask pattern formed on the mask surface P1 of the mask M is wound around the support surface P2 of the substrate support drum 25 (along the circumferential surface) The curved surface) is continuously and repeatedly scanned and exposed. The exposure apparatus U3, the first drive unit 22, and the second drive unit 26 become the movement mechanism of this embodiment. Moreover, in the exposure apparatus U3 shown in FIG. 2, the part upstream of the conveyance direction of the board | substrate P than the guide roller 27 supplies the board | substrate P to the support surface P2 of the board | substrate support drum 25. It becomes a substrate supply part. The supply roll FR1 shown in FIG. 1 may be directly provided in the substrate supply section. Similarly, the portion on the downstream side of the conveyance direction of the substrate P rather than the guide roller 28 becomes a substrate recovery part for recovering the substrate P from the support surface P2 of the substrate support drum 25. The recovery roll FR2 shown in FIG. 1 may be directly provided in the substrate recovery section.

The light source device 13 emits the illumination light beam EL1 illuminated by the mask M. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is, for example, a lamp light source such as a mercury lamp, a gas laser light source such as an excimer laser, or a solid state laser light source such as a laser diode or a light emitting diode (LED). The illumination light emitted from the light source 31 may use, for example, an ultraviolet ray (g-line, h-line, i-line) when using a mercury lamp, or KrF excimer laser light (when using an excimer laser light source). Wavelength (248 nm) or ArF excimer laser light (wavelength 193 nm), such as ultra-violet light (DUV light) can be used. Here, it is preferable that the light source 31 emits the illumination light beam EL1 containing a wavelength shorter than the i-line (wavelength of 365 nm). As such illumination light beam EL1, laser light (wavelength 355 nm) emitted as the third harmonic of the YAG laser and laser light (wavelength 266 nm) emitted as the fourth harmonic of the YAG laser may be used.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 is composed of an optical fiber or a relay module using a mirror. In addition, when a plurality of illumination optical systems IL are provided, the light guiding member 32 divides the illumination light beam EL1 from the light source 31 into a plurality, and the plurality of illumination light beams EL1 is divided into a plurality of illumination optical systems ( IL). The light guide member 32 of the present embodiment causes the illumination light beam EL1 emitted from the light source 31 to enter the polarization beam splitter PBS as light in a predetermined polarization state. The polarizing beam splitter (PBS) is provided between the mask M and the projection optical system PL to illuminate the mask M, and reflects a light beam that becomes linearly polarized light of S polarization, and P polarized light. It transmits the light beam that becomes the linearly polarized light. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes a light beam of linearly polarized light (S polarization). The light source device 13 emits a polarization laser having the same wavelength and phase to the polarization beam splitter (PBS). For example, in the case where the light flux emitted from the light source 31 is polarized light, the light source device 13 uses, as the light guiding member 32, a polarization-surface holding fiber, from the light source device 13. The light is guided while maintaining the polarization state of the output laser light. Further, for example, the light flux output from the light source 31 may be guided to the optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 may polarize the light beam of random polarization with a polarizing plate when the light beam of random polarization is guided. Further, the light source device 13 may guide the light flux output from the light source 31 by a relay optical system using a lens or the like.

Here, as shown in FIG. 3, the exposure apparatus U3 of 1st Embodiment is an exposure apparatus which assumed the so-called multi-lens system. In Fig. 3, a plan view (left view in Fig. 3) of the illumination area IR on the mask M held by the cylindrical drum 21 seen from the -Z side, and a substrate supported by the substrate support drum 25 A plan view (right view in Fig. 3) of the projection area PA on the (P) view from the + Z side is shown. Reference numeral Xs in FIG. 3 denotes a moving direction (rotational direction) of the cylindrical drum 21 and the substrate supporting drum 25. The multi-lens type exposure apparatus U3 illuminates the illumination luminous flux EL1 in the plurality of (for example, six in the first embodiment) illumination regions IR1 to IR6 on the mask M, respectively. A plurality (for example, six in the first embodiment) of the projection areas PA1 to the plurality of projection light beams EL2 obtained by reflecting the light beams EL1 to the respective illumination regions IR1 to IR6 are provided. PA6).

First, the plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, the plurality of illumination regions IR1 to IR6 are disposed on the mask M on the upstream side in the rotational direction with the center plane CL interposed therebetween, and the first illumination region IR1 and the third. The illumination region IR3 and the fifth illumination region IR5 are disposed, and the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region on the mask M on the downstream side in the rotation direction ( IR6) is deployed. Each of the illumination regions IR1 to IR6 is an elongated trapezoidal region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination areas IR1 to IR6 is an area in which the short sides are located on the center surface CL side and the long sides are located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. Moreover, the 2nd illumination area IR2, the 4th illumination area IR4, and the 6th illumination area IR6 are arrange | positioned at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is arranged between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. When each of the illumination regions IR1 to IR6 is rotated in the main direction (X direction) of the triangular portions of the quadrilateral portions of the trapezoidal illumination region adjacent to each other in the Y direction. They are arranged to overlap (overlap) each other. In addition, in the first embodiment, each of the illumination regions IR1 to IR6 is a trapezoidal region, but may be a rectangular region.

Moreover, the mask M has a pattern formation region A3 in which a mask pattern is formed, and a pattern non-forming region A4 in which a mask pattern is not formed. The pattern non-formation region A4 is a low-reflection region (reflection suppressing portion) that is difficult to reflect the illumination light beam EL1, and is arranged around the pattern-forming region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged to cover the entire width in the Y direction of the pattern forming region A3.

The illumination optical system IL is provided in plurality (for example, six in the first embodiment) along the plurality of illumination regions IR1 to IR6. The illumination light beams EL1 from the light source device 13 respectively enter the plurality of illumination optical systems (split illumination optical systems) IL1 to IL6. Each illumination optical system IL1-IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination area IR1-IR6, respectively. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 transmit the illumination light flux EL1. It leads to the 2nd-6th illumination area IR2-IR6. The plurality of illumination optical systems IL1 to IL6 are disposed on the side (left side in FIG. 2) in which the first, third, and fifth illumination regions IR1, IR3, and IR5 are disposed with the center plane CL interposed therebetween. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are disposed. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at predetermined intervals in the Y direction. Further, the plurality of illumination optical systems IL1 to IL6 are disposed on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are disposed with the center plane CL interposed therebetween (right side in FIG. 2). In the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at predetermined intervals in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are, in the axial direction, between the second illumination optical system IL2 and the fourth illumination optical system IL4. It is arranged between the 3rd illumination optical system IL3 and the 5th illumination optical system IL5, and between the 4th illumination optical system IL4 and the 6th illumination optical system IL6. Further, the first illumination optical system IL1, the third illumination optical system IL3 and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6 Are arranged symmetrically as viewed from the Y direction.

Next, with reference to FIG. 4, each illumination optical system IL1-IL6 is demonstrated. Further, since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as 'lighting optical system IL') will be described as an example.

The illumination optical system IL masks the illumination light flux EL1 from the light source 31 of the light source device 13 so as to illuminate the illumination region IR (the first illumination region IR1) with uniform illuminance. Kohler illuminates the illumination region (IR) on (M). In addition, the illumination optical system IL is a falling illumination system using a polarizing beam splitter (PBS). The illumination optical system IL includes, in order from the incident side of the illumination light beam EL1 from the light source device 13, the illumination optical module ILM, the polarizing beam splitter (PBS), and the quarter wave plate 41 Have

As shown in Fig. 4, the illumination optical module ILM includes a collimator lens 51, a fly eye lens 52, and a plurality of condenser lenses in order from the incident side of the illumination light beam EL1. 53, a cylindrical lens 54, an illumination field stop 55, and a relay lens system 56 are provided on the first optical axis BX1. The collimator lens 51 enters light emitted from the light guide member 32 and irradiates the entire surface of the fly-eye lens 52 on the incident side. The center of the surface of the fly-eye lens 52 on the exit side is disposed on the first optical axis BX1. The fly-eye lens 52 generates a surface light source image obtained by dividing the illumination light beam EL1 from the collimator lens 51 into a plurality of point light source images. The illumination light beam EL1 is generated from the surface light source image. At this time, the exit-side surface of the fly-eye lens 52 in which the point light source image is generated is the first concave surface of the projection optical system PL, which will be described later, via the illumination field stop 55 from the fly-eye lens 52 By various lenses reaching the mirror 72, the first concave mirror 72 is disposed so as to be optically conjugate with the same surface on which the reflective surface is located. The optical axis of the condenser lens 53 provided on the exit side of the fly-eye lens 52 is disposed on the first optical axis BX1. The condenser lens 53 superimposes light from each of the plurality of point light sources formed on the exit side of the fly-eye lens 52 on the illumination field stop 55, and the illumination field stop 55 with a uniform illuminance distribution To investigate. The illumination field stop 55 has a trapezoidal or rectangular rectangular-shaped opening which is similar to the illumination area IR shown in Fig. 3, and the center of the opening is disposed on the first optical axis BX1. . The illumination field stop 55 is provided by a relay lens system (imaging system) 56, a polarizing beam splitter (PBS), and a quarter wave plate 41 provided in the optical path from the illumination field stop 55 to the mask M. The opening of) is optically conjugated with the illumination area IR on the mask M. The relay lens system 56 is composed of a plurality of lenses 56a, 56b, 56c, and 56d disposed along the first optical axis BX1, and illuminates the illumination light flux EL1 that has passed through the opening of the illumination field stop 55. The illumination region IR on the mask M is irradiated through the polarization beam splitter (PBS). As the exit side of the condenser lens 53, a cylindrical lens 54 is provided at a position adjacent to the illumination field stop 55. The cylindrical lens 54 is a flat convex cylindrical lens in which the incident side becomes a flat surface and the exit side becomes a convex cylindrical lens surface. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 converges each principal ray of the illumination light beam EL1 irradiating the illumination region IR on the mask M within the XZ plane, and is parallel to the Y direction.

The polarizing beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter (PBS) reflects a light beam that becomes linearly polarized light of S polarization on a wavefront split surface, and transmits a light beam that becomes linearly polarized light of P polarization. Here, if the illumination light beam EL1 incident on the polarization beam splitter PBS is linearly polarized by S polarization, the illumination light flux EL1 reflects from the wavefront splitting surface of the polarization beam splitter PBS, and a quarter wave plate It passes through (41), becomes circularly polarized light, and irradiates the illumination area IR on the mask M. The projection light beam EL2 reflected from the illumination area IR on the mask M is converted from circularly polarized light into linear P-polarized light by passing through the quarter wave plate 41 again, and a polarization beam splitter (PBS) It transmits through the wavefront dividing surface of and faces the projection optical system PL. It is preferable that the polarization beam splitter (PBS) reflects most of the illumination light beam EL1 incident on the wavefront splitting surface and transmits most of the projection light beam EL2. The polarization splitting characteristics of the polarization beam splitter (PBS) on the wavefront splitting surface are indicated by the extinction ratio, but since the extinction ratio also varies with the angle of incidence of the light beam toward the wavefront splitting surface, the characteristics of the wavefront splitting surface are practical. In order that the influence on the imaging performance of the image does not become a problem, it is also designed in consideration of the NA (number of apertures) of the illumination light beam EL1 or the projection light beam EL2.

Fig. 5 shows the behavior of the illumination light beam EL1 irradiated to the illumination area IR on the mask M and the projection light beam EL2 reflected from the illumination area IR, in the XZ plane (first axis AX1). And the vertical plane). As shown in Fig. 5, the above-described illumination optical system IL is configured such that the main light of the projection light beam EL2 reflected from the illumination area IR of the mask M is a telecentric (parallel system). ) Each main ray of the illumination light beam EL1 irradiated to the illumination area IR of) is intentionally non-telecentric in the XZ plane (the plane perpendicular to the first axis AX1), and the YZ plane ( In the center plane (parallel to CL), it is telecentric. Such characteristics of the illumination light beam EL1 are imparted by the cylindrical lens 54 shown in FIG. 4.

Specifically, a line passing through the central point Q1 in the main direction of the illumination area IR on the mask surface P1 toward the first axis AX1 and a circle of 1/2 of the radius Rm of the mask surface P1 Cylindrical lens 54 so that each principal ray of illumination light flux EL1 passing through illumination region IR faces intersection Q2 in the XZ plane when intersection Q2 (1/2 radius position) with is set Set the curvature of the convex cylindrical lens surface. In this way, each main ray of the projection light beam EL2 reflected in the illumination region IR is parallel to the straight line passing through the first axis AX1, point Q1, and intersection Q2 in the XZ plane (telecentric). It becomes one state.

Next, a plurality of projection areas PA1 to PA6 projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in correspondence with the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P, the first projection area PA1 and the third on the substrate P on the upstream side in the transport direction, with the center surface CL therebetween. The projection area PA3 and the fifth projection area PA5 are disposed, and the second projection area PA2, the fourth projection area PA4 and the sixth projection area on the substrate P on the downstream side in the transport direction ( PA6) is deployed. Each of the projection regions PA1 to PA6 is an elongated trapezoidal (rectangular shape) region having short sides and long sides extending in the width direction (Y direction) of the substrate P. At this time, each of the trapezoidal projection areas PA1 to PA6 is an area in which the short sides are located on the center surface CL side and the long sides are located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. Moreover, the 2nd projection area PA2, the 4th projection area PA4, and the 6th projection area PA6 are arrange | positioned at predetermined intervals in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the 3rd projection area PA3 is arrange | positioned between the 2nd projection area PA2 and the 4th projection area PA4 in an axial direction. The fourth projection area PA4 is disposed in the axial direction between the third projection area PA3 and the fifth projection area PA5. The 5th projection area PA5 is arrange | positioned between the 4th projection area PA4 and the 6th projection area PA6 in an axial direction. In each projection area PA1 to PA6, like the respective illumination areas IR1 to IR6, the triangular portions of the quadrilateral portions of the trapezoidal projection areas PA adjacent to each other in the Y direction are transported in the conveyance direction of the substrate P Regarding, it is arrange | positioned so that it may overlap (overlap). At this time, the projection area PA has a shape such that the exposure amount in the overlapping regions of the projection regions PA adjacent to each other is substantially the same as the exposure amount in the non-overlapping regions. Then, the first to sixth projection regions PA1 to PA6 are arranged to cover the entire width in the Y direction of the exposure region A7 exposed on the substrate P.

Here, in FIG. 2, when viewed within the XZ plane, the circumferential length from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) is: Set substantially the same as the circumferential length from the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection areas PA2 (and PA4, PA6). It is done.

The projection optical system PL is provided in plural (for example, six in the first embodiment) according to the plural projection regions PA1 to PA6. A plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems (split projection optical systems) PL1 to PL6, respectively. Each projection optical system PL1-PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1-PA6, respectively. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 ) Guides each projection light beam EL2 from the second to sixth illumination regions IR2 to IR6 to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are disposed on the side (left side in FIG. 2) on which the first, third, and fifth projection regions PA1, PA3, and PA5 are disposed with the center plane CL interposed therebetween. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are disposed. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at predetermined intervals in the Y direction. Moreover, the side where the 2nd, 4th, and 6th projection areas PA2, PA4, PA6 are arrange | positioned with the center plane CL interposed between the some projection optical systems PL1-PL6 (right side of FIG. 2) In the second projection optical system PL2, the fourth projection optical system PL4 and the sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at predetermined intervals in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are, in the axial direction, between the second projection optical system PL2 and the fourth projection optical system PL4. It is arrange | positioned between 3rd projection optical system PL3 and 5th projection optical system PL5, and between 4th projection optical system PL4 and 6th projection optical system PL6. Moreover, the 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5, the 2nd projection optical system PL2, the 4th projection optical system PL4, and the 6th projection optical system PL6 Are arranged symmetrically as viewed from the Y direction.

Again, with reference to FIG. 4, each projection optical system PL1-PL6 is demonstrated. In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the 'projection optical system PL') will be described as an example.

The projection optical system PL projects the image of the mask pattern in the illumination region IR (first illumination region IR1) on the mask M onto the projection region PA on the substrate P. The projection optical system PL, in order from the incidence side of the projection light beam EL2 from the mask M, is the above-mentioned quarter wave plate 41, the polarizing beam splitter (PBS), and the projection optical module. (PLM).

The quarter wave plate 41 and the polarizing beam splitter (PBS) are used in combination with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter wave plate 41 and a polarizing beam splitter (PBS).

The projection light beam EL2 reflected by the illumination region IR is in a telecentric state (a state in which each main ray is parallel to each other) and enters the projection optical system PL. The projection light beam EL2, which becomes the circularly polarized light reflected from the illumination area IR, is converted from the circularly polarized light to linearly polarized light (P polarized light) by the quarter wave plate 41, and then to the polarizing beam splitter (PBS). To join. The projection light beam EL2 incident on the polarization beam splitter PBS enters the projection optical module PLM after passing through the polarization beam splitter PBS.

The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 images the mask pattern of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1, Projected to the first projection area PA1 on the substrate P. Similarly, the projection optical modules LM of the second to sixth projection optical systems PL2 to PL6 are second to third illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. 6 The image of the mask patterns of the illumination regions IR2 to IR6 is projected onto the second to sixth projection regions PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM is provided to the first optical system 61 and the first optical system 61 that form the image of the mask pattern in the illumination region IR on the intermediate image plane P7. A second optical system 62 that re-images at least a part of the intermediate image formed by the image on the projection area PA of the substrate P, and a projection field stop 63 disposed on the intermediate image surface P7 on which the intermediate image is formed. . In addition, the projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and polarization An adjustment mechanism (polarization adjustment means) 68 is provided.

The first optical system 61 and the second optical system 62 are, for example, telecentric reflective refractive optical systems modified from a dyson system. In the first optical system 61, its optical axis (hereinafter referred to as "second optical axis BX2") is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71, and a first concave mirror 72. The first deflection member 70 is a triangular prism having a first reflective surface P3 and a second reflective surface P4. The first reflective surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 to form a first concave mirror ( 72). In the second reflection surface P4, the projection light beam EL2 reflected from the first concave mirror 72 passes through the first lens group 71 and enters, and the incident projection light beam EL2 is projected to the viewing field. It is a surface which reflects toward (63). The first lens group 71 includes various lenses, and the optical axes of the various lenses are arranged on the second optical axis BX2. The first concave mirror 72 is disposed on the same surface of the first optical system 61, and is set in an optically conjugate relationship with a plurality of point light source images generated by the fly-eye lens 52. .

The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflection surface P3 of the first deflection member 70, and the field of view of the upper half of the first lens group 71 It passes through the region and enters the first concave mirror 72. The projection light flux EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and passes through the lower half of the field of view of the first lens group 71 It enters the second reflective surface P4 of the first deflection member 70. The projection light beam EL2 incident on the second reflective surface P4 is reflected by the second reflective surface P4, passes through the focus correction optical member 64 and the optical member 65 for vertical shift, and projects a projection field of view. The aperture 63 is incident.

The projection visual field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, when the shape of the opening of the illumination field stop 55 in the illumination optical system IL is a trapezoid shape that is substantially similar to the actual shape of the projection area PA, the projection field stop 63 can be omitted.

The 2nd optical system 62 is the same structure as the 1st optical system 61, and is provided symmetrically with the 1st optical system 61 with the intermediate image surface P7 interposed therebetween. In the second optical system 62, its optical axis (hereinafter referred to as "third optical axis BX3") is substantially orthogonal to the central surface CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81, and a second concave mirror 82. The second deflection member 80 has a third reflective surface P5 and a fourth reflective surface P6. The third reflective surface P5 reflects the projection light beam EL2 from the projection field stop 63, and passes the reflected projection light beam EL2 through the second lens group 81 to form a second concave mirror ( 82). In the fourth reflective surface P6, the projection light beam EL2 reflected from the second concave mirror 82 passes through the second lens group 81 and enters, and the incident projection light beam EL2 is projected into the projection area ( PA). The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the same surface of the second optical system 62 and is set in an optically conjugate relationship with a plurality of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the projection field stop 63 is reflected by the third reflection surface P5 of the second deflection member 80 and passes through the field of view of the upper half of the second lens group 81. The second concave mirror 82 is incident. The projection light flux EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82 and passes through the viewing area in the lower half of the second lens group 81, so that the second deflection member It is incident on the fourth reflective surface P6 of (80). The projection light beam EL2 incident on the fourth reflective surface P6 is reflected by the fourth reflective surface P6, passes through the optical member 66 for magnification correction, and is projected onto the projection area PA. Thereby, the image of the mask pattern in the illumination area IR is projected equally (x1) to the projection area PA.

The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected on the substrate P. The focus correcting optical members 64 are, for example, two wedge-shaped prisms in opposite directions (opposite to the X direction in Fig. 4) so as to be superimposed on each other so as to form a transparent flat plate as a whole. The thickness as a parallel plate is made variable by sliding this pair of prisms in the inclined surface direction without changing the distance between the surfaces facing each other. Thereby, the effective optical path length of the first optical system 61 is finely adjusted, and the pint state of the mask pattern formed on the intermediate image plane P7 and the projection area PA is finely adjusted.

The optical member 65 for vertical shift is arrange | positioned between the 1st deflection member 70 and the projection visual field stop 63. The optical member 65 for image shift adjusts the image of the mask pattern projected on the board | substrate P so that it can be moved within an image surface. The optical member 65 for image shift is comprised of the transparent parallel flat plate glass which can be inclined in the XZ plane of FIG. 4, and the transparent parallel flat plate glass which can be inclined in the YZ plane of FIG. By adjusting the amount of inclination of the two parallel flat plate glass, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction or the Y direction.

The optical member 66 for magnification correction is arrange | positioned between the 2nd deflection member 80 and the board | substrate P. In the optical member 66 for magnification correction, for example, three concave lenses, convex lenses, and concave lenses are arranged on the coaxial at a predetermined interval, the front and rear concave lenses are fixed, and the convex lenses therebetween are optical axes (main beam). It is configured to move in the direction. Thereby, the image of the mask pattern formed in the projection area PA is enlarged or reduced by a minute amount isotropically while maintaining a telecentric imaging state. Further, the optical axis of the three lens groups constituting the optical member 66 for magnification correction is inclined within the XZ plane so as to be parallel to the main light beam of the projection light beam EL2.

The rotation correction mechanism 67 is a microrotation of the first deflection member 70 around an axis parallel to the Z axis by, for example, an actuator (not shown). The rotation correction mechanism 67 can minutely rotate the image of the mask pattern formed on the intermediate upper surface P7 by rotating the first deflection member 70 within the intermediate upper surface P7.

The polarization adjustment mechanism 68 rotates the quarter wave plate 41 around an axis orthogonal to the plate surface by, for example, an actuator (not shown) to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter wave plate 41.

In the projection optical system PL configured as described above, the projection light flux EL2 from the mask M is emitted in a telecentric state from the illumination area IR (states in which each main light beam is parallel to each other), and 1/4 It passes through the wavelength plate 41 and the polarizing beam splitter (PBS) and enters the first optical system 61. The projection light flux EL2 incident on the first optical system 61 is reflected from the first reflective surface (planar mirror) P3 of the first deflecting member 70 of the first optical system 61, and the first lens group It passes through (71) and is reflected by the first concave mirror (72). The projection light beam EL2 reflected from the first concave mirror 72 passes through the first lens group 71 again and is reflected from the second reflective surface (planar mirror) P4 of the first deflecting member 70. It passes through the focus correcting optical member 64 and the optical member 65 for image shift, and is incident on the projection field stop 63. The projection luminous flux EL2 that has passed through the projection field stop 63 is reflected by the third reflective surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and the second lens group It passes through 81 and is reflected by the second concave mirror 82. The projection light beam EL2 reflected from the second concave mirror 82 passes through the second lens group 81 again and is reflected from the fourth reflective surface (planar mirror) P6 of the second deflecting member 80. And enters the optical member 66 for magnification correction. The projection light beam EL2 emitted from the optical member 66 for magnification correction enters the projection area PA on the substrate P, and the image of the mask pattern represented in the illumination area IR is equal to the projection area PA (× 1).

In the present embodiment, the second reflective surface (planar mirror) P4 of the first deflection member 70 and the third reflective surface (planar mirror) P5 of the second deflection member 80 are center surfaces ( CL) (or the optical axis BX2, BX3) has a 45 ° inclined surface, but the first reflecting surface (planar mirror) P3 of the first deflecting member 70 and the second deflecting member 80 The fourth reflective surface (planar mirror) P6 of is set at an angle other than 45 ° with respect to the central surface CL (or optical axes BX2 and BX3). The angle α ° (absolute value) of the first deflecting member 70 with respect to the central surface CL (or the optical axis BX2) of the first reflective surface P3 is, in FIG. 5, point Q1, intersection Q2, first When the angle between the straight line passing through the axis AX1 and the center surface CL is θs °, it is determined in the relationship of α ° = 45 ° + θs ° / 2. Similarly, the angle β ° (absolute value) with respect to the center surface CL (or the second optical axis BX2) of the fourth reflective surface P6 of the second deflection member 80 is the outer peripheral surface of the substrate support drum 25 When the angle in the ZX plane between the principal ray of the projection light beam EL2 passing through the center point in the projection area PA with respect to the main direction and the center plane CL is εs °, β ° = 45 ° + εs ° / 2.

<Mask and mask support drum>

Next, with reference to Figs. 6 and 7, the configuration of the cylindrical drum (mask holding drum) 21 and mask M of the mask holding mechanism 11 in the exposure apparatus U3 of the first embodiment Explain. 6 is a perspective view showing a schematic configuration of a cylindrical drum 21 and a mask M formed on its outer circumferential surface. 7 is an exploded view showing a schematic configuration of the mask surface P1 when the outer circumferential surface of the cylindrical drum 21 is flatly developed.

In the present embodiment, the mask M is a reflective thin sheet mask, wound on the outer circumferential surface of the cylindrical drum 21, and the cylindrical drum 21 is made of a cylindrical cylindrical base material, and is provided on the outer circumferential surface of the cylindrical base material. Any of the cases in which the reflective mask pattern is directly formed may be applied, but for simplicity, the latter case will be described. The mask M formed on the mask surface P1 which is the outer circumferential surface (diameter φ) of the cylindrical drum 21, as shown in FIG. 3 above, has a pattern forming region A3 and a pattern non-forming region (shielding band (遮光 帶) region) (A4). The mask M shown in FIGS. 6 and 7 is projected to the exposure area A7 on the substrate P in FIG. 3 via each projection area PA1 to PA6 of the projection optical systems PL1 to PL6. It corresponds to the pattern formation area A3. The mask M (pattern forming region A3) is formed almost entirely in the main direction of the outer circumferential surface of the cylindrical drum 21, but the width (length in the direction (Y direction) parallel to the first axis AX1) ) Is L, smaller than the length La in the direction parallel to the first axis AX1 (Y direction) of the outer circumferential surface of the cylindrical drum 21. In addition, in the case of this embodiment, the mask M is not disposed densely over 360 ° of the outer circumferential surface of the cylindrical drum 21, but is provided with a margin portion 92 of a predetermined dimension interposed therebetween. . Therefore, both ends of the margin part 92 in the main direction correspond to the end and the start end in the scanning exposure direction of the mask M (pattern forming region A3).

In addition, in FIG. 6, the first shaft AX1 and the shaft SF coaxially are provided at both end faces of the cylindrical drum 21. The shaft SF supports the cylindrical drum 21 via a bearing provided at a predetermined position in the exposure apparatus U3. The bearing is a contact type using a metal ball or needle, or a non-contact type such as a static pressure gas bearing. Moreover, among the outer circumferential surfaces (mask surface P1) of the cylindrical drum 21, in the Y-direction parallel to the first axis AX1, the cylindrical drum 21 is provided in each of the end regions outside the region of the mask M. ) (The encoder scale for measuring the rotation angle position of the mask M) with high precision may be formed on the entire surface in the main direction. The scale disc provided with the encoder scale measuring the rotation angle position may be fixed to the shaft SF and coaxially.

Here, FIG. 7 is a state in which the outer circumferential surface of the cylindrical drum 21 of FIG. 6 is cut off at a cutting line 94 in the margin portion 92, and developed. In addition, in the following, the direction orthogonal to the Y direction in the state where the outer circumferential surface is expanded is set to the θ direction. As shown in Fig. 7, the entire circumferential length of the mask surface P1 has a diameter of φ, so that the circumferential ratio is π and πφ. Moreover, with respect to the total length La in the direction parallel to the first axis AX1 of the mask surface P1, in the Y direction parallel to the first axis AX1 of the mask M (pattern formation area A3) The length L is formed by L≤La, and is formed by the length Lb in the θ direction. The length obtained by subtracting the length Lb from the entire circumferential length πφ of the mask surface P1 is the total dimension of the margin portion 92 in the θ direction. Alignment marks for alignment of the mask M are also formed at each of the discrete positions in the Y direction in the margin portion 92.

Here, the mask M shown in FIG. 7 is used as a mask for forming a pattern corresponding to one of the display panels used in liquid crystal display displays, organic EL displays, and the like. In that case, as a pattern formed on the mask M, a pattern for forming a TFT electrode or wiring driving each pixel on the display screen of the display panel, a pattern for each pixel on the display screen of the display device, or a display device Color filters or black matrix patterns. In the mask M (pattern formation area A3), as shown in FIG. 7, around the display screen area DPA and the display screen area DPA where a pattern corresponding to the display screen of the display panel is formed. A peripheral circuit area TAB in which a pattern such as a circuit for driving the display screen is formed is provided.

The size of the display screen area DPA on the mask M corresponds to the size of the display portion of the display panel to be manufactured (inch size of diagonal length Le), but the projection optical system PL shown in FIGS. 2 and 4 When the projection magnification of) is equal (× 1), the actual size (diagonal length Le) of the display screen area DPA on the mask M becomes the inch size of the actual display screen. In this embodiment, the display screen area DPA is a rectangular shape with long sides Ld and short sides Lc, but the ratio (aspect ratio) of the lengths of long sides Ld and short sides Lc is Ld: Lc = 16: 9 in a typical example. B Ld: Lc = 2: 1. The aspect ratio 16: 9 is an aspect ratio of a screen used in a so-called hi-vision size (wide size). The aspect ratio 2: 1 is an aspect ratio of a screen called a scope size, and is an aspect ratio used in a super high-definition size of 4K2K in a television image. As an example, in the case of a display panel having an aspect ratio of 16: 9 and a screen size of 50 inches (Le = 127 cm), the long side Ld of the display screen area DPA on the mask M is about 110.7 cm, and the short side Lc is about 62.3. It becomes cm. In the same screen size (50 inches), when the aspect ratio is 2: 1, the long side Ld of the display screen area DPA is about 113.6 cm, and the short side Lc is about 56.8 cm.

7, when one display panel mask M (including the display screen area DPA and the peripheral circuit area TAB) is formed on the outer peripheral surface of the cylindrical drum 21, the display screen area DPA It is good to arrange so that the direction of the long side Ld of () is the direction (the main direction of the cylindrical drum 21). This is because the diameter φ of the cylindrical drum 21 is not made too small, and the length La in the first axis AX1 direction of the cylindrical drum 21 is not made too large. Thus, an example of the size (Lb × L) of the mask M including the width dimension of the peripheral circuit area TAB is given. The width dimension of the peripheral circuit area TAB varies depending on the circuit configuration, but the sum of the widths in the Y direction of the peripheral circuit areas TAB located at both ends of the Y direction of the display screen area DPA in FIG. 10% of the length Lc in the Y direction of the display screen area DPA and the sum of the widths in the θ direction of the peripheral circuit areas TAB located at both ends in the θ direction of the display screen area DPA are displayed. DPA) is considered as 10% of the length Ld in the θ direction.

In this case, in a 50-inch display panel with an aspect ratio of 16: 9, the long side Lb of the mask M is 121.76 cm, and the short side L is 68.49 cm. Since the dimension in the θ direction of the margin portion 92 is zero or more, the diameter φ of the cylindrical drum 21 is 38.76 cm or more from the calculation of φ≥Lb / π. Therefore, in order to scan and expose the pattern of a 50-inch display panel with an aspect ratio of 16: 9 to the substrate P, the diameter φ is 38.76 mm or more, and is parallel to the first axis AX1 of the mask surface P1. A cylindrical drum 21 having a length La of shorter side L (68.49 cm) or more is required. In this case, the ratio L / φ of the diameter φ and the short side L of the mask M is about 1.77. Further, assuming that the sum of the widths in the θ direction of the peripheral circuit area TAB is 20% of the length Ld in the θ direction of the display screen area DPA, the long side Lb of the mask M is 132.83 cm, and the short side L Is 68.49 cm, the diameter φ of the cylindrical drum 21 is 42.28 cm or more, and the ratio L / φ of the diameter φ and the short side L of the mask M is about 1.62.

Under the same conditions, in the case of a 50-inch display panel with an aspect ratio of 2: 1, the long side Lb of the mask M is 124.96 cm, and the short side L is 62.48 cm. As a result, the diameter φ of the cylindrical drum 21 is 39.78 cm or more from the calculation of φ≥Lb / π. Therefore, in order to scan and expose the pattern of a 50-inch display panel with an aspect ratio of 2: 1 to the substrate P, the diameter φ is 39.78 cm or more, and is parallel to the first axis AX1 of the mask surface P1. The length La of the short side L (62.48cm) or more of the cylindrical drum 21 is required. In this case, the ratio L / φ of the diameter φ and the short side L of the mask M is about 1.57. Further, assuming that the sum of the widths in the θ direction of the peripheral circuit area TAB is 20% of the length Ld in the θ direction of the display screen area DPA, the long side Lb of the mask M is 136.31 cm, and the short side L Is 62.48 cm, the diameter φ of the cylindrical drum 21 is 43.39 cm or more, and the ratio L / φ of the diameter φ and the short side L of the mask M is about 1.44.

As shown in Fig. 7, when the mask M on which a single display panel pattern is formed is disposed on the outer peripheral surface of the cylindrical drum (mask holding drum) 21, the length of the mask M in the Y direction orthogonal to the scanning exposure direction The relationship between L and the diameter φ of the mask surface P1 falls within a range of 1.3 ≤ L / φ ≤ 3.8. However, when the arrangement of the mask M shown in FIG. 7 is rotated 90 ° in FIG. 7, the long side Lb of the mask M is set to the Y direction and the short side L is set to the θ direction, and the relationship is deviated from the above relationship. For example, in the case of a 50-inch display panel with an aspect ratio of 16: 9 above, if the width in the θ direction of the peripheral circuit area TAB is 10% of the length Ld of the display screen area DPA, the mask ( Since the long side Lb of M) is 121.76 cm and the short side L is 68.49 cm, the minimum value of the length L in the direction parallel to the first axis AX1 of the mask surface P1 is Lb (121.76 cm), and the cylindrical drum ( The diameter φ of 21) is 21.80 cm or more from the calculation of φ≥L / π. Therefore, the ratio Lb / φ between the diameter φ and the length Lb in the direction parallel to the first axis AX1 of the mask M is about 5.59. Similarly, in the case of a 50-inch display panel with an aspect ratio of 2: 1, the long side Lb of the mask M is 124.96 cm, and the short side L is 62.48 cm, so that the first axis AX1 of the mask surface P1 is The minimum value of the length L in the parallel direction is Lb (124.96 cm), and the diameter φ of the cylindrical drum 21 is 19.89 cm or more from calculation of φ≥L / π. Therefore, the ratio Lb / φ between the diameter φ and the length Lb in the direction parallel to the first axis AX1 of the mask M is about 6.28.

Thus, even if the size (Lb × L) of the mask M is the same, the value of the ratio L / φ (or Lb / φ) varies greatly depending on the direction of the long side and the short side. When the ratio L / φ (or Lb / φ) is large, the diameter φ of the cylindrical drum 21 is small, and the curvature of the mask surface P1 becomes steep. It is connected by narrowing the width of the scanning exposure direction Xs of the illumination area IR or the projection area PA. Alternatively, the length in the direction parallel to the first axis AX1 of the cylindrical drum 21 is doubled, and the number of plural projection optical systems PL (illumination optical systems IL) arranged in the Y direction is multiplied. It leads to further increase. On the other hand, when the ratio L / φ (or Lb / φ) is small, one has a small length in a direction parallel to the first axis AX1 of the mask M on the cylindrical drum 21, for example, Of the three out of six projection areas PA1 to PA6, only about half is used, and the other is the diameter φ of the cylindrical drum 21 is too large, θ of the margin portion 92 shown in FIGS. 6 and 7 It is a situation in which the dimension of the direction becomes larger than necessary. As described above, by setting the dimensional condition of the outer shape of the cylindrical drum (mask holding drum) 21 to a relationship of 1.3≤L / φ≤3.8, a precise exposure operation using the mask M with a pattern for a display panel is formed. It can be carried out efficiently, and productivity can be improved.

In the example shown in FIGS. 6 and 7, a mask M having a pattern for a display panel on one surface is supported on the outer circumferential surface (mask surface P1) of the cylindrical drum (mask holding drum) 21. Although it was an example, a pattern for a plurality of display panels may be formed on the mask surface P1. Some examples in that case will be described with reference to FIGS. 8 to 10.

8 is an exploded view showing a schematic configuration when three masks M1 of the same size are arranged on the mask surface P1 in the circumferential longitudinal direction (θ direction) of the cylindrical drum 21. 9 is an exploded view showing a schematic configuration when four masks M2 of the same size are arranged on the mask surface P1 in the circumferential longitudinal direction (θ direction) of the cylindrical drum 21. In Fig. 10, the mask M2 shown in Fig. 9 is rotated by 90 degrees, and two masks M2 are arranged on the mask surface P1 in the Y direction, and the circumferential length direction of the cylindrical drum 21 (θ direction) ) Is a developed view showing a schematic configuration when two sets are arranged. In the example shown in FIGS. 8 to 10, a plurality of display panels of the same size (three or four here) are exposed on the substrate P during one rotation of the cylindrical drum 21. It is called (M). 8, the entire area on the mask surface P1 to be scanned and exposed on the substrate P via the projection optical system PL is set as the mask M in accordance with FIG. Among the masks M, a mask M1 (M2 in Figs. 9 and 10) to be a display panel is arranged along a predetermined interval Sx in the scanning exposure direction (theta direction). Each mask M1 (M2 in Figs. 9 and 10) includes a display screen area DPA having a diagonal length Le and a peripheral circuit area TAB surrounding it, as in Fig. 7.

First, it demonstrates from the example shown in FIG. In Fig. 8, the largest rectangle is the mask surface P1 that is the outer peripheral surface of the cylindrical drum 21. The mask surface P1 has a length πφ in the θ direction over a rotation angle from 0 ° to 360 ° when the cutting line 94 is the origin of the θ direction, and is parallel to the first axis AX1. It has a length La in the direction. The area indicated by the broken line inside the mask surface P1 is a mask M corresponding to the entire area to be exposed on the substrate P (the exposure area A7 in FIG. 3). The three masks M1 arranged in the θ direction in the mask M are arranged such that the long side direction of the display screen area DPA becomes the Y direction, and the short side direction becomes the θ direction. In addition, in the space Sx adjacent to the θ direction of each mask M1, an alignment mark (mask mark) 96 for specifying the position of the mask M (or M1) on the cylindrical drum 21 is Y It is provided discretely in three directions. These mask marks 96 are detected via a mask alignment optical system (not shown) arranged at a predetermined position in the circumferential direction of the cylindrical drum 21 opposite to the outer circumferential surface (mask surface P1). The exposure apparatus U3 shifts the position of the entire cylindrical drum 21 or the rotational direction (theta direction) for each mask M1 based on the position of each mask mark 96 detected by the mask alignment optical system. The positional displacement in the Y and Y directions is measured.

In general, in the case of forming the device of the display panel on the substrate P, it is necessary to stack a plurality of layers, and therefore, the exposure apparatus is provided with a mask M (or M1) at any position on the substrate P. The alignment mark (substrate mark) for specifying whether or not the pattern of the light is exposed is transferred onto the substrate P together with the mask M (or M1). In Fig. 8, such a substrate mark 96a is formed at each of three places separated in the θ direction as both ends of the Y direction of each mask M1. The area on the mask (or substrate P) occupied by the substrate mark 96a is about Y in width in the Y direction. Therefore, the length L in the Y direction of the mask M on the mask surface P1 to be exposed on the substrate P is the dimension of the Y direction of each mask M1 and the Y direction of each mask M1. It becomes the sum of the dimension of the area of the board | substrate mark 96a secured on both sides in the Y direction.

The length Lb in the θ direction of the entire mask M on the mask surface P1 is equal to Lb if the length obtained by summing the dimensions in the θ direction of each mask M1 and the Y direction in each interval Sx is Px. = 3Px. As shown in FIG. 7, in the case of disposing the mask M corresponding to a single display panel, it is preferable to provide a margin portion 92 having a predetermined length, but as shown in FIG. 8, an interval Sx is provided in the θ direction. Thus, when a plurality of masks M1 are arranged, the length of the margin portion 92 in the θ direction can be zero. That is, since the length of each mask M1 in the θ direction is determined by the size of the display panel, and the minimum dimension required as the spacing Sx is also predetermined, the cylindrical drum 21 meets the relationship of φ = 3Px / π It is sufficient to set the diameter φ of. Conversely, when the range of the diameter φ of the cylindrical drum 21 that can be attached to the exposure apparatus U3 is generally determined, it can be adjusted by changing (large) the dimension of the spacing Sx.

Here, an example of the specific dimension of the mask M like FIG. 8 is demonstrated. In Fig. 8, the diagonal length Le of the display screen area DPA of the mask M1 is 32 inches (81.28 cm), and the respective dimensions in the Y direction and the θ direction of the peripheral circuit area TAB are displayed in the display screen area DPA. It is assumed that the size is about 10%, and the dimension in the Y direction of the region forming the substrate mark 96a is 0.5 cm (1 cm by combining both sides). In the display panel with an aspect ratio of 16: 9, the short side dimension of the mask M1 is 48.83 cm, and the long side dimension is 77.93 cm. In the display panel with the aspect ratio 2: 1, the short side dimension of the mask M1 is 43.83. cm, the long side becomes 79.97 cm. When the dimension of the margin portion 92 is zero and Lb = πφ = 3Px is satisfied, when three masks M1 and three spaces Sx are arranged in the θ direction, the length in the θ direction of the mask M1 is increased. In the case of Lg, the interval Sx is obtained from Sx = (Lb-3Lg) / 3.

Therefore, both the mask M1 for a display panel with an aspect ratio of 16: 9 and the mask M1 for a display panel with an aspect ratio of 2: 1 are on the mask surface P1 of the cylindrical drum 21 of the same diameter. In the case where it is possible to arrange in, the diameter φ of the cylindrical drum 21 may be about 43 cm. In this case, the spacing Sx between the masks M1 is 1.196 cm on the display panel with an aspect ratio of 16: 9, and the spacing Sx between the masks M1 is set to 5.045 cm on the display panel with an aspect ratio of 2: 1. It is good.

Since the length L in the Y direction of the mask M on the mask surface P1 is the sum of the Y-direction dimension of the mask M1 and the Y-direction dimension (1 cm) of the formation region of the substrate mark 96a, the aspect ratio is 16 In the mask M for a display panel of 9: persons, L = 78.93 cm, and in the mask M for a display panel of 2: 1 ratio, L = 80.97 cm. Therefore, the ratio between the diameter φ (43 cm) of the cylindrical drum 21 and the length L in the Y direction of the mask M is L / φ = in the cylindrical drum 21 for a display panel having an aspect ratio of 16: 9. In the cylindrical drum 21 for a display panel with 1.84 and an aspect ratio of 2: 1, L / φ = 1.88. In either case, the ratio L / φ falls within the range of 1.3 to 3.8.

In addition, in the case of exposing the pattern of the display panel with the aspect ratio 16: 9 on the substrate P, and when exposing the pattern of the display panel with the aspect ratio 2: 1 on the substrate P, the substrate ( When the dimension in the θ direction of the space Sx on the P) is minimized, it is necessary to change the diameter φ of the cylindrical drum 21 by itself. For example, when the interval Sx is 2 cm, the diameter φ of the cylindrical drum 21 on which the display panel mask M1 having an aspect ratio of 16: 9 is formed is φ from a relationship of πφ = 3 (Lg + Sx). ≥43.77cm. On the other hand, the diameter φ of the cylindrical drum 21 on which the display panel mask M1 having an aspect ratio of 2: 1 is formed is φ≥40.1cm. Also in this case, in the cylindrical drum 21 for display panel with aspect ratio 16: 9, ratio L / φ = 1.80, in cylindrical drum 21 for display panel with aspect ratio 2: 1, ratio L / φ = 2.02, and is in the range of 1.3 to 3.8.

In addition, in preparation for the case where the diameter φ of the cylindrical drum 21 (mask M) to be attached to the exposure apparatus U3 changes as described above, the exposure apparatus U3 has a difference of the diameter φ. ), A mechanism for shifting the position of the cylindrical drum 21 in the Z direction of the first axis AX1 is provided. In the above example, since the difference in diameter φ is 3.67 cm, the first axis AX1 (shaft SF) of the cylindrical drum 21 is supported by shifting about 1.835 cm in the Z direction. Moreover, when the shift amount of the cylindrical drum 21 in the Z direction of the first axis AX1 is large, the cylindrical lens 54 shown in FIG. 4 is a convex cylindrical surface that satisfies the lighting conditions as shown in FIG. 5. Change to one having a curvature of, and adjust the angle α ° of the first reflective surface (planar mirror) P3 of the first deflection member 70, and a polarization beam splitter (PBS) and a quarter wave plate ( It is also necessary to incline 41) in a small amount within the XZ plane as a whole.

As described above, the mask M (including three masks M1) formed on the cylindrical drum 21 as shown in FIG. 8 includes a pattern (mask M1) for a display panel transferred onto the substrate P. Incidentally, a plurality of substrate marks 96a are provided in the θ direction (scanning exposure direction). Therefore, when the plurality of substrate marks 96a are sequentially transferred with the display panel pattern (mask M1) on the substrate P by the exposure apparatus U3, various problems during exposure can be confirmed. . For example, by using the substrate mark 96a transferred on the substrate P, the location of a defect (for example, dust) formed on the substrate P is specified, or the patterning error or focus error of the mask , It is possible to measure various offset errors such as overlapping errors during overlapping exposure with each other. The measured offset error, in addition to the management of the entire mask, the position management of each mask M1 on the cylindrical mask 21, the position management of the pattern (mask M1) of each display panel transferred on the substrate P Used for (correction).

Fig. 9 shows a mask of the cylindrical drum 21 by arranging four masks M2 for a display panel with an aspect ratio of 2: 1 in the θ direction so that the Y direction becomes the long side of the display screen area DPA, for example. An example arranged on the surface P1 is shown. The space Sx is provided on the side (long side) in the θ direction of each mask M2, and the mask mark 96 and the substrate mark 96a are also provided in the same manner as in FIG. 8 above. In this case, the total length πφ (= Lb) in the main direction (θ direction) of the mask surface P1 is πφ = 4Px = 4 (Lg + Sx). Here, the screen size of the display screen area DPA is 24 inches (Le = 60.96 cm), and the total width in the θ direction of the peripheral circuit area TAB is 10% of the length in the θ direction of the display screen area DPA. , The total width in the Y direction of the peripheral circuit area TAB is 20% of the length in the Y direction of the display screen area DPA, and the substrate mark 96a disposed at each of both ends of the mask M2 in the Y direction. The total width of the formation region in the Y direction is 1 cm.

In this case, since the size of the display screen area DPA is 54.52 cm on the long side and 27.26 cm on the short side, the total length L in the Y direction of the mask M for exposure on the mask surface P1 is the mask M2 and the substrate. It includes the formation region of the mark 96a, and L = 66.43 cm. Further, since the length Lg in the θ direction of the mask M2 on the mask surface P1 is Lg = 29.99cm, if the interval Sx is 1 cm, the diameter φ of the mask M (cylindrical drum 21) is , From πφ≥4Px, it becomes 39.46cm or more. Therefore, as shown in Fig. 9, even when four faces of the mask M2 for the display panel having an aspect ratio of 2: 1 are provided on the cylindrical drum 21, the ratio L / φ becomes 1.67, and is 1.3 to It falls within the range of 3.8.

10, the mask M2 shown in FIG. 9 is rotated 90 °, the long sides are arranged toward the θ direction, and a total of four, two in the θ direction and two in the Y direction, are arranged on the mask surface P1. Here is an example of the case. Here, it is assumed that a region for forming the substrate mark 96a is provided between two masks M arranged in the Y direction. Therefore, when the total width in the Y direction of the formation region of the substrate mark 96a is 2 cm, the total length (short side) L in the Y direction of the mask M formed on the mask surface P1 is 61.98 cm. , The total length (long side) πφ of the mask M in the θ direction is 132.86 cm, and the diameter φ of the mask M (cylindrical mask 21) is 42.29 cm or more, and the ratio L / φ is 1.47.

By the way, when the four masks M2 are arrange | positioned like FIG. 9 or FIG. 10, when adjusting the spacing Sx, the diameter phi of the cylindrical drum 21 and the dimension La in the Y direction of the mask surface P1 are made constant. You can do it. In the case of Figs. 9 and 10, the length L in the Y direction as the mask M is large, L = 66.43 cm in the case of Fig. 9, and the diameter φ is large as the cylindrical drum 21 (mask M). It is φ≥42.29cm in the case of FIG. 10. Here, if the cylindrical drum 21 having the dimension La in the Y direction of the outer circumferential surface (mask surface P1) La≥66.43cm and diameter φ≥42.3cm is used, the mask in any arrangement of FIGS. 9 and 10 is used. Four chamfers of (M2) are possible. Also in this case, the ratio L / φ becomes 1.57, and becomes the range of 1.3-3.8.

8 to 10, there is a possibility that a mask pattern (masks M, M1, M2) for a display device is arranged on the mask surface P1 by various arrangement rules. On the other hand, the length L in the direction orthogonal to the scanning exposure direction (θ direction) of the mask surface P1 (outer circumferential surface) of the cylindrical drum (mask holding drum) 21 and the diameter of the cylindrical drum 21 When the relationship with φ satisfies the relationship of 1.3 ≤ L / φ ≤ 3.8, even when a plurality of mask patterns (masks M1, M2) of display panels of various sizes are arranged, as shown in FIGS. The mask pattern can be arranged with the (interval Sx) reduced.

Moreover, the cylindrical drum 21 can suppress the increase in the number of illumination optical systems IL and projection optical systems PL while suppressing the enlargement of the apparatus by satisfying the relationship of 1.3 ≤ L / φ ≤ 3.8. That is, the cylindrical drum 21 becomes elongated, and it can suppress that the number of illumination optical systems IL and projection optical systems PL increases. Moreover, the diameter phi of the cylindrical drum 21 becomes large, and it can suppress that the dimension in the Z direction of the apparatus becomes large.

Here, as shown in Fig. 7, in the case of forming a mask M of one chamfer for a display panel with an aspect ratio of 2: 1 on the entire surface of the outer peripheral surface (mask surface P1) of the cylindrical drum 21 In the case where the dimension in the θ direction of the margin portion 92 in FIGS. 6 and 7 is zero, and the dimension La in the Y direction (first axis AX1 direction) of the mask surface P1 is La = L. I assume. In addition, as described above, the peripheral circuit area TAB disposed around the screen display area DPA may be about 20% of the screen display area DPA. However, the dimensional ratio of the peripheral circuit area TAB varies depending on the specification and design of the actual pattern, in which part of the periphery of the screen display area DPA is arranged the terminal portion serving as a circuit. Therefore, although it cannot be accurately specified, it is assumed that the aspect ratio as the mask M increases in the direction of enlargement, and the total width of the peripheral circuit area TAB adjacent to the short side of the screen display area DPA is the screen. It is assumed that it is about 20% of the long side Ld of the display area DPA. It is also assumed that the total width of the peripheral circuit area TAB adjacent to the long side of the screen display area DPA is about 0 to 10% of the short side Lc of the screen display area DPA. Under such assumptions, in the case of a 50-inch display panel with an aspect ratio of 2: 1 of the screen display area DPA, the long side Ld of the screen display area DPA is 113.59 cm, and the short side Lc is 56.8 cm. Accordingly, the length Lb (= πφ) in the θ direction of the mask M in FIG. 7 is 136.31 cm, the diameter φ of the cylindrical drum 21 (mask M) is 43.39 cm, and the length L (= La) in the Y direction. Is 56.8 to 62.48 cm, and the ratio L / φ between the length L and the diameter φ is 1.30 to 1.44. Thus, in the case where the entire mask for the display panel having a large aspect ratio is formed in one chamfer on the front surface of the cylindrical drum 21 (mask surface P1), the ratio L / φ is the smallest value 1.3. do. When the aspect ratio of the screen display area DPA is 2: 1, the mask M becomes 20% larger than the width of the peripheral circuit area TAB only in the long side direction, as shown in FIG. 7. The aspect ratio (Lb / L) of the one-chamfered mask M is 2.4, and is derived as the ratio L / φ = π / 2.4 / 1.30 from Lb = πφ.

In addition, when the mask M in FIG. 7 is rotated 90 ° as in the printing machine and disposed on almost the entire surface of the mask surface P1 of the cylindrical drum 21, as described above, the ratio L / φ becomes too large. . As in the above conditions, when the aspect ratio of the screen display area DPA is 2: 1, the mask M of one chamfer becomes 20% larger including the width of the peripheral circuit area TAB only in the long side direction. , When the dimension in the θ direction of the margin portion 92 is zero, L / Lb (πφ) = 2.4 / 1, and the ratio L / φ is 7.54. In this case, in the case of the chamfered mask M for the 50-inch display panel illustrated above, the length L in the Y direction is 136.31 cm, the length Lb in the θ direction (πφ) is 56.8 cm, and the cylindrical drum 21 The diameter φ of the (mask M) is 18.1 cm. As described above, in the case where the long side direction of the mask M is set to the θ direction and the Y direction is set, the ratio L / φ changes greatly.

The projection optical system PL of the exposure apparatus U3 has a distortion error due to projection or a projection image due to an arc when the diameter φ of the cylindrical drum 21 changes greatly, especially when the diameter φ becomes small. Since the point of change of is increased, it becomes difficult to expose a good projection image on the substrate P. In that case, for example, as shown in Fig. 11, if two of the masks M2 with the long side direction of the display panel having the screen display area DPA having an aspect ratio of 2: 1 in the Y direction are arranged in the θ direction, do.

In Fig. 11, each of the two masks M2 includes a screen display area DPA having an aspect ratio of 2: 1, and a peripheral circuit area TAB arranged on both sides of the Y direction of the screen display area DPA. do. It is assumed that the sum of the widths in the Y direction of the peripheral circuit areas TAB is 20% of the dimension Ld of the long sides of the screen display area DPA, and the space Sx is provided near the right side of the mask M2. Assuming that the substrate mark 96a or the mask mark 96 is not disposed around the mask M2, the entirety of the mask M including the two masks M2 and the spacing Sx (mask surface P1) The dimension L in the Y direction is L = 1.2 · Ld, and the dimension πφ (Lb) in the θ direction is πφ = 2 (Lc + Sx). When the aspect ratio Asp of the screen display area DPA is set to Asp = Ld / Lc, the ratio L / φ is expressed as follows.

L / φ = 0.6 · π · Asp · Lc / (Lc + Sx)

Here, when the interval Sx is set to zero, the ratio L / φ becomes L / φ = 0.6 · π · Asp, and the two of the display panel masks M2 having an aspect ratio of 2: 1 are in the same direction as in FIG. 11. When arranged as, the ratio L / φ between the diameter φ of the cylindrical drum 21 (mask surface P1) and the length L (= La) in the first axis AX1 direction is 3.77 (about 3.8). In this case, if the screen display area DPA (2: 1) is 50 inches, the diameter phi is 36.16 cm and the length L (La) is 136.31 cm. Similarly, when the mask M2 shown in Fig. 11 is used for a display panel having an aspect ratio of 16: 9, when the spacing Sx is zero, the ratio L / is obtained from the relationship of L / φ = 0.6 · π · Asp. φ becomes 3.35. In this case, if the screen display area (DPA) 16: 9 is 50 inches, the diameter phi is 39.64 cm and the length L (La) is 132.83 cm.

As described above, the short side direction of the screen display area DPA is directed to the main direction (θ direction) of the cylindrical drum 21, and the long side direction is the direction (Y direction) of the first axis AX1 of the cylindrical drum 21. Even when the mask M is arranged so as to face, the ratio L / φ can be made 3.8 or less by arranging two or more identical masks M2 in the θ direction. Further, if n masks M2 shown in Fig. 11 are arranged in the θ direction under the same conditions, the relational expression representing the previous ratio L / φ is as follows.

L / φ = 1.2 · π · Asp · Lc / n (Lc + Sx)

From this relational expression, the arrangement of the display panel mask M2 to be manufactured on the cylindrical drum 21, the required spacing Sx, and the like can be set to satisfy 1.3 ≤ L / φ ≤ 3.8.

In addition, the mask surface P1 has a ratio L / φ by arranging three masks M1 and M2 of the mask pattern for the display panel device as shown in FIG. 8 or four as shown in FIG. 9. It becomes possible to arrange it smaller than 3.8. In this case, what value the ratio L / φ is to be obtained is obtained from a relational expression in the case where n masks M1 and M2 having a long length in the Y direction are arranged in the θ direction. Since the vertical and horizontal dimensions of the masks M1 and M2 also change depending on the width of the peripheral circuit area TAB around the display screen area DPA, both sides (or one side) in the long length direction of the display screen area DPA are changed. The enlarged magnification of the dimension in the long length direction of the masks M1 and M2 enlarged by the peripheral circuit area TAB is e1, and the peripheral circuit area TAB on both sides (or one side) in the short length direction of the display screen area DPA The magnification of the dimensions in the short length direction of the masks M1 and M2 to be enlarged by) is e2.

Therefore, when the dimension La in the Y direction of the mask surface P1 is matched with the dimension in the long length direction of the masks M1 and M2, the length L in the Y direction of the mask area on the mask surface P1 is L = La = e1 · Ld. Similarly, the length πφ (Lb) in the θ direction of the mask region on the mask surface P1 is πφ = n (e2 · Lc + Sx), and the ratio L / φ is expressed by the following relational expression.

L / φ = e1 · π · Asp · Lc / n (e2 · Lc + Sx)

In this relational expression, in the case of the mask M2 shown in Fig. 11, n = 2, e1 = 1.2, and e2 = 1.0.

For example, when the aspect ratio of the display screen area DPA of the mask M2 for the display panel device is 16: 9 (Asp = 1.778), the masks M2 are arranged in three directions in parallel in the θ direction (n = 3), if the interval Sx is zero, the ratio L / φ becomes L / φ = e1 · π · Asp / n · e2, even if the magnification e1 is 1.2 and the magnification e2 is 1.0. / φ becomes 2.23.

Furthermore, as shown in FIG. 10 above, the aspect ratio of the entire masked area of the four chamfers in which the masks M2 (24 inches) are arranged in two rows and two columns is directed toward the long side of the display screen area DPA in the θ direction. If the aspect ratio of the mask (M) (50 inches) of one chamfer is almost the same, it is possible to make the cylindrical drum 21 of the same dimension only by the difference in the dimension of the terminal portion of the peripheral circuit area TAB, or the difference in the spacing Sx. Is done.

As described above, if the aspect ratio of the display screen area (DPA) of the display panel is close to 2: 1, such as 16: 9 or 2: 1, the masks M, M1, M2 for the display panel are effectively cylindrical. To arrange on the outer circumferential surface of the drum 21, the relationship between the length L in the direction orthogonal to the scanning exposure direction (theta direction) of the cylindrical drum (cylindrical mask) 21 (the Y direction) and the diameter φ is 1.3 ≤ L / It is good to satisfy φ≤3.8. Moreover, when the aspect ratios of the single masks M, M1 and M2 are close to 2: 1, when a plurality of these masks are arranged in multiple faces, the aspect ratio of the entire mask area on the mask face P1 occupied by the face faces ( It is good to make L: Lb) close to 1: 1. Moreover, it is preferable to make the interval Sx (or the margin part 92) constant.

In addition, the relationship between the diameter φ of the outer circumferential surface (mask surface P1) of the cylindrical drum 21 and the total length L (La) in the direction of the first axis AX1 of the mask pattern formed on the mask surface P1 is , It is preferable to satisfy 1.3≤L / φ≤3.8, but if 1.3≤L / φ≤2.6, the above effects can be obtained. As an example, when the mask M2 is rotated by 90 ° so that the long length direction of the mask M2 shown in Fig. 11 is the θ direction, and two chamfers are arranged in a row without spacing in the Y direction, L / It becomes φ ≒ 2.6. In this case, the length πφ (Lb) in the θ direction of one mask M2 is πφ = e1 · Ld, and the length L of the sum of the two masks M2 lined in the Y direction is L = 2 · e2 · It is Lc. Therefore, from Asp = Ld / Lc, the ratio L / φ becomes L / φ = 2π · e2 / e1 · Asp, and when e1 = 1.2, e2 = 1.0, Asp = 2/1, L / φ = π /1.2≒2.6.

Moreover, it is preferable that the exposure apparatus U3 makes the masks M (M1, M2) interchangeable. By making the mask replaceable, a display panel of various sizes or a mask pattern for an electronic circuit board can be projected and exposed to the substrate P. In addition, even if the number of surfaces of the masks M, M1, M2, etc. formed on the mask surface P1 of the cylindrical drum 21 is various, a gap (interval Sx) generated between the masks is required. It will not take too much. That is, it is possible to suppress a decrease in the ratio of the effective mask area (mask utilization rate) occupying the entire area of the mask surface P1.

Further, the masks M (M1, M2) have a diameter φ of the mask surface P1 of the cylindrical drum 21 and a length L of the mask region in a direction orthogonal to the scanning exposure direction (Y direction), all of which are approximately. It is preferable to make it interchangeable so that it becomes the same. Thereby, only by exchanging the masks M (M1, M2), the projection optical system PL or illumination optical system IL on the exposure apparatus U3 side, or the substrate P and the mask surface P1 Adjustment of other parts such as the distance of is unnecessary or can be completed with a very small adjustment amount, and patterns of various devices can be transferred with the same product quality even after the mask is replaced.

Moreover, in the above-mentioned embodiment, the masks M1 and M2 for various surface number devices, which have a constant diameter φ of the cylindrical drum 21 and have different surface chamfers and arrangement directions, are masked. In some cases, the devices of various surface numbers may be arranged on the mask surface P1 by disposing them on the surface P1 or by changing the diameter φ of the cylindrical drum 21. However, in any case, by making the shape of the cylindrical mask surface P1 satisfy the relationship of 1.3≤L / φ≤3.8, a plurality of mask patterns can be arranged on the mask surface P1 with a small gap. . Thereby, the pattern of a device (display panel) can be efficiently transferred to the board | substrate P. In addition, by making the cylindrical mask formed by the cylindrical drum 21 satisfy the relationship of 1.3 ≤ L / φ ≤ 3.8, the gap between a plurality of device patterns is reduced, and patterns of devices of various sizes are efficiently formed. It can be arranged, and the change in the diameter φ of the cylindrical mask can be reduced.

8 to 11, the number of mounting surfaces of the masks M1 and M2 can be 2, 3, 4, or more depending on the size of the display panel (device) to be manufactured. have. If the number of mounting surfaces of the masks M1 and M2 is increased to three or four, the dimension of the gap (interval Sx) can be made smaller.

Further, the cylindrical drum 21 satisfies 1.3≤L / φ≤3.8, so that the width of the scanning exposure direction (θ direction) of the illumination area IR or the projection area PA with respect to the roll diameter (diameter φ) , The so-called exposure slit width can be optimized (large). Hereinafter, the relationship between the diameter phi of the mask surface P1 of the cylindrical drum 21 and the exposure slit width in the scanning exposure direction will be described with reference to FIG. 12.

12 is a graph simulating the relationship between the diameter φ of the cylindrical drum 21 (mask surface P1) and the exposure slit width D by changing the amount of defocus. In Fig. 12, the vertical axis represents the exposure slit width D [mm], which represents the width in the θ direction (X direction) of the projection area PA (Fig. 3) formed on the substrate P. The vertical axis represents the diameter φ [mm] of the cylindrical drum 21 (mask surface P1). In addition, the defocus amount is the numerical aperture NA on the upper side (substrate P) side of the projection optical system PL of the exposure apparatus U3, the wavelength λ of the illumination light for exposure, and the process constant k (k = 1) Focus depth defined by) is determined based on the DOF. Here, two types of cases in which the deviation amount (defocus amount) in the focus direction between the best focus surface of the projected image and the surface of the substrate P are 25 µm and 50 µm are simulated.

Here, in the simulation of FIG. 12, since the numerical aperture NA of the projection optical system PL is 0.0875, the wavelength λ of the illumination light is 365 nm, which is the i-line of the mercury lamp, and the process constant k is about 0.5, the depth of focus DOF is DOF = k · λ About 50 µm (about -25 µm to +25 µm) in width is obtained from / NA ² . Moreover, as a resolution under this condition, 2.5 µm L / S can be obtained. The defocusing time of 25 µm shown by the broken line in FIG. 12 is a state in which a focus deviation of about 1/2 of the depth of focus DOF occurs within the exposure slit width D, and at 50 µm defocusing shown by the solid line, exposure is performed. Within the slit width D, there is a state in which a focus deviation of the depth of focus DOF occurs. That is, the graph at the time of defocusing at 25 μm indicated by the broken line allows 1/2 of the width of the depth of focus DOF (25 μm in width) as an error due to curvature of the mask surface P1 of the cylindrical drum 21. A graph showing the relationship between the diameter φ in one case and the exposure slit width D, and the graph at the time of 50 μm defocus shown by a solid line, curves the mask surface P1 of the cylindrical drum 21 up to the depth of the depth of focus DOF. The relationship between the diameter φ and the exposure slit width D when allowed as an error by is shown.

In FIG. 12, when the diameter φ of the cylindrical drum 21 is changed to a range of 100 mm to 1000 mm, the allowable defocus amount (hereinafter referred to as ΔZ) is an exposure slit width D of 25 μm and an exposure slit of 50 μm. The width D was determined by the following calculation.

D = 2 · [(φ / 2) ² － (φ / 2-ΔZ) ² ] ^0.5

From this simulation, for example, when the diameter φ is 500 mm, the maximum value of the exposure slit width D in the case of allowing up to 25 μm as the defocus amount ΔZ is about 7.1 mm, and up to 50 μm as the defocus amount ΔZ. The maximum value of the exposure slit width D when it is said to be about 10.0 mm.

12, as the diameter phi of the cylindrical drum 21 increases, the exposure slit width D satisfying the allowable defocus amount increases. In the case of the mask M2 as shown in FIG. 11 in which the aspect ratio of the display screen area DPA is 2: 1 and the peripheral circuit area TAB is provided only in the long longitudinal direction of the display screen area DPA, the mask ( If only one surface of M2) is formed around the entire circumference of the mask surface P1 of the cylindrical drum 21 without creating a margin portion 92 (interval Sx), the long longitudinal direction of the mask M2 is cylindrical drum. The ratio L / φ largely changes depending on whether the direction is the main direction (θ direction) of (21) or the direction (Y direction) of the first axis AX1. When the long length direction of the mask M2 is set to the Y direction as shown in FIG. 11, the length Lc (short length) in the θ direction of one surface of the mask M2 is equal to the total circumferential length πφ of the outer peripheral surface of the cylindrical drum 21. It becomes the same and becomes phi = Lc / π. At this time, the length L in the direction (Y direction) of the first axis AX1 of the mask M2 on the cylindrical drum 21 is L = 1.2 · Ld, as in the case of FIG. 11. Since the aspect ratio 2: 1 is Ld = 2Lc, the ratio L / φ in this case is L / φ = 2.4 · π ≒ 7.5. On the other hand, if the short length direction of the mask M2 is set to the Y direction, the total circumferential length πφ in the θ direction of one surface of the mask M2 becomes 1.2 · Ld, and Y of the mask M2 on the cylindrical drum 21 The length L in the direction is Lc. Therefore, the ratio L / φ in this case is L / φ = π / 2.4 ≒ 1.3.

The length L in the Y direction of the mask is set to be within the range of the total dimension in the Y direction of each of the projection areas PA1 to PA6 (FIG. 3) of the projection optical system PL of the exposure apparatus U3, and the length L is set. If it is made constant, about 6 times the ratio L / φ changes from 1.3 to 7.5 means that the diameter φ of the cylindrical drum 21 changes about 6 times. The change of about 6 times the diameter φ corresponds to a change from diameter φ = 150 mm to 900 mm in FIG. 12, for example. In this case, the exposure slit width D when the allowable defocus amount ΔZ is set to 25 μm is changed from about 3.9 mm at φ150 mm to about 9.5 mm at φ900 mm. Therefore, when the length L in the Y direction of the mask is constant, when the cylindrical mask having a diameter of φ 900 mm is changed to a cylindrical mask having a diameter of 150 mm, the exposure slit width D is reduced to about 40%. The same is true when the allowable defocus amount ΔZ is 50 μm.

For this reason, when the ratio L / φ is targeted in the range of 1.3 to 7.5, when the contrast of the projected image is constantly exposed, the exposure amount applied to the substrate P is simply reduced to 40%. In order to make the exposure amount applied to the substrate P an appropriate value (100%), the movement speed of the substrate P during exposure by the projection area PA set to 9.5 mm as the exposure slit width D is about The substrate P is moved at a rate of 40%. That is, since the transfer speed itself of the substrate P is dropped to about 40%, the throughput (productivity) is less than half. Even in exposure using the projection area PA set to 3.9 mm as the exposure slit width D, in order not to lower the transfer speed of the substrate P, the luminance of the projection image in the projection area PA, that is, the illumination light beam EL1 ) Is considered to be increased. In that case, the illuminance of the illumination light beam EL1 irradiating the mask surface P1 needs to be about 2.5 times the illuminance when the exposure slit width D is 9.5 mm.

On the other hand, if two chamfers of the mask M2 as shown in Fig. 11 are employed, the ratio L / φ can be set to a range (1.3 to 3.8) of about 3.8 (1.2 · π) or less. When the length L in the Y direction of the mask is made constant, the change in diameter φ of the cylindrical mask (cylindrical drum 21) is in the range of about 3 times, and may be considered between, for example, φ = 900mm to 300mm. . 12, the exposure slit width D when the allowable defocus amount ΔZ is 25 µm when the diameter φ is 300 mm is about 5.5 mm. Therefore, for the case where the exposure slit width D is about 9.5 mm, the conveyance speed of the substrate P ends with a decrease of about 60%. As described above, by limiting the aspect ratio (L: πφ) of the mask region formed on the mask surface P1 of the cylindrical drum 21 so that the ratio L / φ is about 1.3 to about 3.8, the exposure slit width D Changes can be suppressed.

Similarly, when three masks M2 in Fig. 11 are arranged in the θ direction with the spacing Sx zero as shown in Fig. 8, L / φ = 0.4π · Asp, and the diameter φ of the cylindrical drum 21 is , For example, there is a possibility that it may vary in the range of about 1.8 times from 500 mm to 900 mm. The exposure slit width D at a defocus amount of 25 μm is reduced from about 9.5 mm to about 7.1 mm when the diameter φ is 900 mm, but this corresponds to a reduction in throughput of about 75%. However, as in the previous example, it is improved than when the throughput is less than half. In addition, when four masks M2 of FIG. 11 are arranged in the θ direction with zero spacing Sx as shown in FIG. 9, L / φ = 0.3π · Asp, and the diameter φ of the cylindrical drum 21 May change, for example, in the range of about 1.3 times from 700 mm to 900 mm. The exposure slit width D at a defocus amount of 25 µm is reduced from about 9.5 mm when the diameter φ is 900 mm to about 8.4 mm. This is equivalent to a reduction in throughput of about 88%, but as in the previous example, the throughput is significantly improved compared to the case where the throughput is less than half, and a substantially loss-free exposure becomes possible. Further, if the exposure slit width is reduced by about 75% or 88%, the illuminance of the illumination light beam EL1 can be easily increased by increasing the light emission intensity of the light source 31 or increasing the number of light sources. It is possible to eliminate the drop in throughput at all. In addition, it can be seen that the throughput becomes constant as the size of the mask region approaches the constant value. That is, according to the screen size (diagonal length Le) of the display image area DPA, the size of the mask area L is obtained by dividing one chamfer of the mask M and the chamfer of the mask M1 or the mask M2. The cylindrical drum 21 having a constant xπφ can be made (the diameter φ does not change), so that the throughput is kept constant.

By the way, although the ratio L / φ range was set to about 1.3 to about 3.8, as shown in Fig. 11, the dimension in the long length direction of the mask M2 for the display panel with the aspect ratio 2: 1 is the peripheral circuit area. This is because it is assumed that a 20% increase in the length Ld of the display screen area DPA, including the width of (TAB), is increased by 20% (when it becomes 1.2 times). Therefore, if the lengthwise dimension of the mask is enlarged by e1 times with respect to the lengthwise dimension Ld of the display screen area DPA, the ratio L / φ is expressed as Asp = Ld / Lc in the following range. Lose.

π / (e1 · Asp) ≤L / φ≤e1 · π

By using the cylindrical drum 21 (cylindrical mask) that satisfies this condition, the exposure apparatus U3 of the present embodiment is capable of distorting a projected image caused by a projection error due to a cylindrical surface or projecting a projected image by an arc. While suppressing the change (focus shift), a plurality of mask patterns for a display panel (device) can be transferred while being arranged on the substrate P with a small gap.

The arrangement examples of the masks M, M1, M2, etc. formed on the cylindrical mask (cylindrical drum 21) in this embodiment are summarized as shown in Figs. 13 and 14. Fig. 13 shows the case of one chamfering of the mask M with the long direction in the θ direction as in the previous Fig. 7, and Fig. 14 shows the Y direction with the long direction in the same direction as in Fig. 11 above. It shows the case of two chamfers in which two masks M2 are arranged in the θ direction. FIG. 13 is a case in which the mask M for a display panel having a diagonal length Le (inch) of the display screen area DPA is arranged in a direction in which the long sides are in the θ direction, as in FIG. 7. In this case, the ratio (Ld / Lc) of the long side dimension Ld and the short side dimension Lc of the display screen area DPA is set to the aspect ratio Asp, and includes the peripheral circuit area TAB around the display screen area DPA. If the entire mask M is formed on the outer circumferential surface (mask surface P1) of the cylindrical drum 21 without any margin, the length πφ of the mask M in the θ direction is πφ = e1 · Ld = e1 · Asp · It becomes Lc, and the length L in a Y direction becomes L = e2 * Lc. As described earlier, in e1, the long length direction of the mask M is the display screen area DPA by the total width of the peripheral circuit areas TAB attached to both sides or one side in the long length direction of the display screen area DPA. ) Is an enlarged magnification showing how much is enlarged with respect to the long length direction. Similarly, in e2, the short length direction of the mask M is displayed by the total width (Ta in FIG. 13) of the peripheral circuit areas TAB attached to both sides or one side in the short length direction of the display screen area DPA. This is an enlargement magnification showing how much the screen area DPA is enlarged with respect to the short length direction. From the above, the minimum required size as the outer peripheral surface (mask surface P1) of the cylindrical drum 21 is πφ × L, and the ratio L / φ of the length L and the diameter φ of the mask M at this time is as follows. It is shown together.

L / φ = π · e2 / e1 · Asp

Assuming that the aspect ratio (πφ: L) of the mask M becomes larger, the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is set to zero (e2 = 1), and enlarged. When the magnification e1 is 1.2 (20% increase), the ratio L / φ becomes π / 1.2 · Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / φ becomes π / 2.4 ≒ 1.3, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / φ is It becomes π / 2.134 ≒ 1.47.

FIG. 14 is a case of two chamfers in which two masks M2 having the long side direction of the display screen area DPA in the Y direction are arranged in the θ direction, as in FIG. 11, and the aspect ratio Asp and magnification e1 , e2 is the same as in FIG. 13. The size of one mask M2 including the peripheral circuit area TAB around the display screen area DPA is L × Lg, and two of these masks M2 are spaced with an interval Sx in the θ direction. It is juxtaposed. Accordingly, when the entire mask including the two masks M2 and the two spaces Sx is formed on the outer peripheral surface (mask surface P1) of the cylindrical drum 21 without any margin, the length πφ of the entire mask in the θ direction is , πφ = 2 (Lg + Sx), and the length L in the Y direction is L = e1 · Ld. Therefore, the ratio L / φ at this time is expressed as follows.

L / φ = π · e1 · Ld / 2 (Lg + Sx)

Here, assuming that the magnification e1 is 1.2 (increase by 20%), the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is zero (e2 = 1), and the spacing Sx is also assumed to be zero, From the relationship of Lg = e2 · Lc and Ld = Asp · Lc, the ratio L / φ is 0.6π · Asp.

Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / φ is about 3.8, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / φ is about 3.4 do.

In this way, the size (inches) of the display panel (device) disposed on the cylindrical mask surface P1, the aspect ratio Asp of the display screen area DPA, the width of the peripheral circuit area TAB, and the like are determined. On the basis of the paper, it is possible to easily produce a preferable cylindrical mask (cylindrical drum 21) whose ratio L / φ is suitable for the device specifications of the exposure apparatus U3.

In addition, specific examples will be described with reference to FIGS. 15 to 18. First, as shown in FIG. 7 or 13, when the mask M with the long side direction of the display screen area DPA in the θ direction is chamfered on the mask surface P1 of the cylindrical drum 21, Is used as a reference for comparison. Here, in the specific example, it is assumed that the projection optical system PL of the exposure apparatus U3 projects the mask pattern on the substrate P at equal magnification. Therefore, an actual display panel and a full-scale mask pattern are formed on the mask surface P1 of the cylindrical drum 21. In addition, the display screen area (DPA) of the display panel is a high-vision size (aspect ratio 16: 9) and is a 60-inch screen. In this case, the short side dimension Lc of the display screen area DPA is 74.7 cm, the long side dimension Ld is 132.8 cm, and the diagonal length Le is 152.4 cm. In addition, the size of the entire mask M including the peripheral circuit area TAB is 1.2 (20% increase) in the magnification e1 in the long direction of the display screen area DPA, and 1.15 in the magnification e2 in the short direction. (15% increase), e1 · Ld = 159.4cm in the long length direction (θ direction) and e2 · Lc = 85.9cm in the short length direction (Y direction). Furthermore, the length in the θ direction of the margin portion 92 shown in FIG. 6 or 7 is set to 5.0 cm. Since the mask M is provided on the mask surface P1 of the cylindrical drum 21 under the above conditions, the dimension πφ of the mask surface P1 in the θ direction is 164.4 cm. Therefore, the diameter φ of the cylindrical drum 21 needs to be 52.33 cm or more, and is set to 52.5 cm, for example. In addition, although the length in the Y direction of the entire mask M under the above conditions was 85.9 cm, since this mask M is used as a reference, the projection area of each projection optical system PL1 to PL6 of the exposure apparatus U3 ( It is assumed that the overall width in the Y direction of the exposure area in which the PA1 to PA6) are connected in the Y direction is slightly larger than 85.9 cm, and 87 cm. Here, from the simulation result shown in FIG. 12, when the diameter φ of the cylindrical drum 21 (cylindrical mask M) is 52.5 cm, the exposure slit width D when the allowable defocus amount is 25 μm is 7.4 mm. And the exposure slit width D when the allowable defocus amount is 50 μm is 10.3 mm. Therefore, when the substrate P is scanned and exposed using the mask M (cylindrical drum 21) serving as the reference shown in Fig. 13, the exposure slit width D is 7.4 mm or less, or 10.3 mm or less. It is assumed that various exposure conditions (movement speed of the substrate P, illuminance of the illumination light beam EL1, etc.) are optimized. That is, when the allowable defocus amount ΔZ is to be 25 μm or less, the illumination field in FIG. 4 is such that the exposure slit width D (width in the scanning exposure direction of the projection area PA) is a predetermined value of 7.4 mm or less. The aperture of the aperture 55 or the aperture of the projection field of view aperture 63 in the projection optical system PL is adjusted.

Next, on the outer peripheral surface (mask surface P1) of the cylindrical drum 21 set for the mask M for the 60-inch display panel shown in Fig. 13, the aspect ratio is 16: 9 (Asp = 16/9). The case of disposing the mask M3 for a 32-inch display panel will be described. The size of the mask surface P1 of the cylindrical drum 21 is L = 85.9cm in the Y direction and πφ = 164.4cm in the length in the θ direction, but similar to the reference mask M, the display screen area DPA When one of the masks M3 for a 32-inch display panel is arranged (1 chamfered) so that the long length direction of θ is in the θ direction, wide margins are possible around the mask M3 on the mask surface P1.

In the case of this 32-inch display panel, the dimension Ld of the long side of the display screen area DPA is 70.8 cm, and the dimension Lc of the short side is 39.9 cm. Further, when the magnification e1 by the peripheral circuit area TAB adjacent to both sides or one side in the long length direction of the display screen area DPA is about 1.2 (increased by 20%), the dimension in the θ direction of the mask M3 is It is enlarged by about 15 cm, becomes 85.8 cm, and if a margin portion 92 of about 5 cm is provided in the θ direction, it becomes 90.8 cm in the total length. Therefore, the mask M3 is only formed at about 55% of the total circumferential length (πφ = 164.4cm) on the mask surface P1 of the cylindrical drum 21 prepared for the reference mask M. Moreover, while the length L in the Y direction of the mask surface P1 of the cylindrical drum 21 as a reference is 85.9 cm, the length in the Y direction of the mask M3 is the short length direction of the display screen area DPA. If the magnification e2 of is about 1.15 (15% increase), it becomes 45.8 cm. Therefore, the mask M3 is only formed at about 53% of the dimension in the Y direction (L = 85.9 cm) on the mask surface P1 of the cylindrical drum 21 as a reference. Therefore, if one of the masks M3 for a 32-inch display panel is arranged on the mask surface P1 of the reference cylindrical drum 21 so that the long longitudinal direction of the display screen area DPA becomes the θ direction, the mask ( The occupied area of M3) is only about 30% of the total area of the mask surface P1, which is not efficient.

By the way, in order to efficiently arrange one mask M3 on the cylindrical drum 21, the total circumferential length is 90.8 cm, which is the sum of the dimensions of the mask θ direction in the θ direction and the dimensions of the margin portion 92. If the diameter φ of the cylindrical drum 21 is changed so as to be, the diameter φ may be at least 28.91 cm. Therefore, assuming that the diameter φ of 29 cm was prepared as the cylindrical drum 21 for the mask M3, from the simulation result of FIG. 12, the exposure slit width D in the case of diameter φ = 29 cm is the allowable defocus amount ΔZ When it is 25㎛, it is about 5.4mm, and when the allowable defocus amount ΔZ is 50㎛, it is about 7.6mm.

This is compared with the exposure slit width D (7.4 mm, or 10.3 mm) set for the reference cylindrical drum 21. In the case of the reference mask surface P1 (cylindrical drum 21 having a diameter of φ = 52.5 cm), the substrate set to obtain an appropriate exposure amount by setting the exposure slit width D to 10.3 mm (permissible defocus amount 50 µm) Let the moving speed of P) be V1. At this time, when exposing the pattern of the mask M3 of one chamfer for a 32-inch display panel formed on the cylindrical drum 21 having a diameter of phi = 29 cm to the substrate P under the same conditions, the exposure slit width D is 7.6. Since the mm (permissible defocus amount is 50 µm), when the illuminance is constant, the moving speed V2 of the substrate P for obtaining an appropriate exposure amount is V2 = (7.6 / 10.3) V1, and the substrate of the production line Overall, the processing speed decreases almost 25%. Even when the allowable defocus amount ΔZ is 25 μm, productivity decreases to the same degree.

Then, a specific example of a two-chamfered cylindrical mask (cylindrical drum 21) in an arrangement as shown in Fig. 14 is shown in Fig. 15 in a mask M3 for a 32-inch display panel with an aspect ratio of 16: 9. It is explained by. In Fig. 15, the long side dimension Ld of the display screen area DPA is 70.8 cm, and the short side dimension Lc is 39.9 cm. Moreover, since the magnification e1 in the long length direction (Y direction) of the mask M3 by the peripheral circuit area TAB is about 1.2, and the magnification e2 in the short length direction (θ direction) is about 1.15, the mask M3 The length L in the Y direction increases by about 15 cm to 85.8 cm, and the length Lg in the θ direction of the mask M3 increases by 6 cm to 45.9 cm.

Here, when the dimension in the θ direction of the space Sx (margin portion 92) adjacent to the long side of the mask M3 is 10 cm, the θ direction of the entire mask region including the two masks M3 and the two spaces Sx The length of is from 2 (Lg + Sx) to 110.8 cm. Therefore, the diameter φ of the cylindrical drum 21 in this case should just be about 35.3 cm. Further, the length L in the Y direction of the mask surface P1 on the cylindrical drum 21 is at least 85.8 cm. This length L (85.8 cm) fits within the range of 87 cm in the total width in the Y direction (total length in the Y direction of the projection areas PA1 to PA6) set in the cylindrical drum 21 as a reference. Therefore, the cylindrical mask (φ = 35.3cm, L = 85.8cm of cylindrical drum 21) for chamfering the mask M3 shown in FIG. 15 is a standard cylindrical mask (φ = 52.5cm, L = 85.9cm). Like the phosphorus cylindrical drum 21, it is mounted on the exposure apparatus U3, and the pattern of the mask M3 can be efficiently exposed on the board | substrate P.

16 is an exploded view showing a schematic configuration of another example of chamfering the mask M3 for a 32-inch display panel shown in FIG. 15. Here, it is assumed that the masks M3 having the same dimensions as in Fig. 15 are arranged in two directions in the Y-direction without a gap so that the long longitudinal direction of the display screen area DPA is in the θ direction. The dimension L in the Y direction by M3) is 91.8 cm (2 x 45.9 cm). This length L (91.8 cm) does not fall within the range of 87 cm of the total width in the Y direction (total length in the Y direction of the projection areas PA1 to PA6) set in the standard cylindrical drum 21 as a reference. . That is, two chamfers in which the same mask M3 as shown in Fig. 15 is rotated by 90 ° cannot be placed on the mask surface P1 of the cylindrical drum 21 as a reference.

17 is a developed view showing a schematic configuration of another example of chamfering the mask M3 for a 32-inch display panel shown in FIG. 15. Here, it is assumed that one of the masks M3 having the same dimensions as in FIG. 15 is arranged so that the short length direction of the display screen area DPA is in the θ direction, and the spacing Sx of the margin portion 92 in the θ direction is set. Let it be 10 cm. The arrangement of the mask M3 is inefficient because the area occupied by the standard cylindrical drum 21 on the mask surface P1 is very small. By the way, assuming the cylindrical drum 21 of a dimension suitable for the one-chamfered mask M3 as shown in FIG. 17, the total circumferential length πφ of the cylindrical drum 21 is the dimension Lg of the mask M3 in the θ direction. 45.9 cm) and the sum of the dimensions (10 cm) of the margin portion 92 (Sx) is πφ = 55.9 cm. Therefore, since the diameter phi of the cylindrical drum 21 becomes 17.8 cm or more, it is regarded as 18 cm. Moreover, since the length L in the Y direction of the mask M3 in this case is 85.8 cm as in FIG. 15, the ratio L / φ is about 4.77.

In this way, if the diameter φ (18 cm) smaller than the diameter φ (52.5 cm) of the standard cylindrical mask (cylindrical drum 21) is set, the mask M3 can be efficiently disposed on the mask surface P1. , Throughput (productivity) decreases. According to the simulation of FIG. 12, when the diameter of the mask surface P1 is 18.0 cm, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm is about 4.3 mm, and the allowable defocus amount ΔZ is 50 The exposure slit width D in the case of µm is about 6.0 mm. Therefore, the moving speed V2 of the substrate P is reduced in accordance with the narrowing of the exposure slit width D with respect to the moving speed V1 of the substrate P when the standard cylindrical mask (cylindrical drum 21) is used. . When the allowable defocus amount ΔZ is 25 μm, V2 = (4.3 / 7.4) V1, and when the allowable defocus amount ΔZ is 50 μm, V2 = (6.0 / 10.3) V1, in which case Also, compared with the case of using a standard cylindrical mask, the throughput is reduced to about 58%.

Next, a specific example in which three masks M3 having the same size as in Fig. 15 are arranged in the θ direction so that the long longitudinal direction faces the Y direction as shown in Fig. 15 will be described with reference to Fig. 18. The arrangement of the mask M3 in Fig. 18 is three chamfers similar to those in Fig. 8 above.

Here, if the dimensions of the margins 92 (Sx) adjacent to each of the long sides of the three masks M3 or the θ direction of the spacing Sx are all 9 cm, the dimension Lg of the short sides of the mask M3 is 45.9 cm. , The length in the θ direction of the entire mask region is 164.7 cm from 3 (Lg + Sx). In this case, if the length in the θ direction of the entire mask region is made to coincide with the total circumferential length πφ of the cylindrical drum 21, the diameter φ of the cylindrical drum 21 is 52.43 cm or more. This value is almost the same as the diameter φ = 52.5cm of the standard cylindrical mask. Moreover, the dimension L in the Y direction of the mask area is 85.8 cm, and falls within 87 cm of the total width in the Y direction of the exposure areas (projection areas PA1 to PA6).

As described above, if the mask M3 for a 32-inch display panel with an aspect ratio of 16: 9 is used, the mask surface P1 of the standard cylindrical drum 21 (φ = 52.5 cm) is standardized by three chamfers as shown in FIG. On the image, the mask M3 can be efficiently disposed by simply adjusting the dimensions of the margin portion 92 and the spacing Sx. Therefore, in the case of three chamfering of the mask M3 as shown in Fig. 18, since the standard cylindrical mask size (phi x L) can be used as it is, no decrease in throughput occurs. In addition, in the case of Fig. 18, the ratio L / φ is about 1.63, and the range is considered to be capable of efficient production, and 1.3≤L / φ≤3.8.

15 to 18, a display panel device of any size based on the size of the mask surface P1 of the cylindrical mask (cylindrical drum 21) serving as a reference that can be mounted on the exposure apparatus U3 In the case of creating, by adjusting the directionality or the number of surfaces so that the ratio L / φ when arranging the mask on the cylindrical drum 21 in one chamfer or multiple chamfers is within the range of 1.3 to 3.8, production efficiency is not lowered, The pattern can be transferred efficiently.

15 to 18 were based on the size of the mask surface P1 for creating a 60-inch one-sided display panel device with an aspect ratio of 16: 9 of the display screen area DPA. However, it is not limited to this. For example, the display screen area DPA may be a high-definition screen with an aspect ratio of 16: 9 and a screen of 65 inches. In this case, the diagonal length Le of the display screen area DPA arranged as shown in FIG. 13 is 165.1 cm, the short side Lc extending in the Y direction is 80.9 cm, and the long side Ld extending in the θ direction is 143.9 cm. In addition, the size of the entire mask M including the peripheral circuit area TAB is enlarged in the long side direction (theta direction) e1 = 1.2 (20% increase in the long length direction of the display screen area DPA), short side direction It is assumed that the magnification e2 = 1.15 in the (Y direction) (15% increase in the short length direction of the display screen area DPA) is larger than the size of the display screen area DPA. Accordingly, in the case of a single chamfering mask M for a 65-inch display panel with an aspect ratio of 16: 9, the length of the mask M in the longitudinal direction is 172.7 cm from e1 · Asp · Lc as shown in FIG. 13. , The dimension in the short length direction is 93.1 cm from e2 · Lc as shown in FIG. 13. In the case of the one chamfering mask M, the margin portion 92 is provided adjacent to the θ direction, but when the dimension Sx in the θ direction is 5 cm, the dimension in the θ direction of the mask surface P1 is about 178 cm. The diameter φ is 56.7 cm or more. Further, since the length of the mask surface P1 in the Y direction is 93.1 cm, the overall width in the Y direction of the exposure area (projection area) is provided to the exposure apparatus U3 that can be mounted with this 65-inch cylindrical mask as a reference mask. Six projection optical systems PL having different dimensions in the Y direction of the projection area PA are provided so that (the sum of the Y-direction widths of PA1 to PA6) is, for example, 95.0 cm. Alternatively, seven projection optical systems in which one additional projection optical system PL is added in the Y direction are provided. The ratio L / φ of the cylindrical mask (cylindrical drum 21) for chamfering a 65-inch display panel with an aspect ratio of 16: 9 is L / φ = 1.64 (# 93.1 / 56.7). Moreover, since the diameter φ of the cylindrical mask is 56.7 cm, from the simulation result of FIG. 12, the exposure slit width D is about 7.5 mm when the allowable defocus amount ΔZ is 25 μm, and the allowable defocus amount ΔZ is 50 μm. If it does, it becomes about 10.6 mm.

Then, three cylinder masks M4 for a 37-inch display panel (φ = 56.7cm, L = 93.1cm) for a single chamfer of a 65-inch display panel with an aspect ratio of 16: 9 are shown in Fig. 18. A specific example of chamfering in the same arrangement will be described with reference to FIG. 19. In FIG. 19, the long side Ld (Y direction) of the 37-inch display screen area DPA is 81.9 cm, the short side Lc (θ direction) is 46.1 cm, and the magnification e1 in the long side direction and the magnification ratio in the short side direction. If e2 is all 1.15 (15% increase), the long side dimension L (e1 · Ld) of the mask M4 is about 94.2 cm, and the short side dimension Lg (e2 · Lc) is about 53.0 cm.

Here, when the space Sx between the mask M4 and the mask M4 is about 6.0 cm, the total circumferential length πφ, which is the total dimension in the θ direction between the three masks M4 on the mask surface P1 and the three spaces Sx, is , From πφ = 3Lg + 3Sx, it is about 177 cm, and the diameter φ is 56.4 cm or more. Moreover, since the length L in the Y direction of the mask M4 is 94.2 cm, it falls within the total width (95 cm) in the Y direction of the exposure area. In the case of Fig. 19, the seventh projection optical system PL (projection area PA7) was added in the Y direction so that the overall width in the Y direction of the exposure area was 95 cm. From the above, in the case where the mask for the 37-inch display panel as shown in Fig. 19 is chamfered, it has the same shape dimensions as the cylindrical mask (cylindrical drum 21) for chamfering the mask M for the 65-inch display panel. You can use Thus, also in the case of the mask M4 shown in FIG. 19, the space Sx between the three masks M4 is made smaller and more efficient with respect to the entire area of the mask surface P1 of the cylindrical drum 21 as a reference. In addition to being able to be arranged, since the cylindrical drum 21 having the same diameter φ as the reference cylindrical mask can be used, a decrease in throughput due to a decrease in the exposure slit width D is also suppressed.

In addition, when the size of the display screen area DPA of the display panel device is 37 inches and the mask M4 for this is arranged on two surfaces, the arrangement may be the same as in Fig. 15 described above. In this case, when the total dimension in the θ direction between the two masks M4 and the two spaces Sx is set to the total circumferential length πφ of the cylindrical mask, and the spacing Sx is about 6 cm, it becomes πφ ≒ 118.0cm. Therefore, the diameter phi of the cylindrical mask (cylindrical drum 21) when the two surfaces of the mask M4 are efficiently arranged in the main direction is 37.6 cm or more.

In this case, the ratio L / φ is about 2.5 (# 94.2 / 37.6). In the case of the cylindrical drum 21 having a diameter of phi = 37.6 cm, from the simulation of Fig. 12, the exposure slit width D is about 6 mm when the allowable defocus amount ΔZ is 25 µm, and the allowable defocus amount ΔZ is 50 µm. In the case of, it becomes about 8.6mm. In comparison with the standard exposure slit width D (7.5 mm, 10.6 mm) for a cylindrical mask having a diameter of φ = 56.7 cm, the allowable defocus amount ΔZ is either 25 µm or 50 µm. , Productivity (moving speed of substrate P) is about 80%. However, if the illuminance of the illumination luminous flux EL1 can be increased by about 20% compared to exposure with a reference cylindrical mask, no substantial decrease in productivity occurs.

Moreover, although the mask pattern of the cylindrical mask (cylindrical drum 21) was projected on the board | substrate P by equal magnification, the exposure apparatus U3 of this embodiment is not limited to this. The exposure apparatus U3 adjusts the configuration of the projection optical system PL, the circumferential speed of the cylindrical mask (cylindrical drum 21), the moving speed of the substrate P, and the like. The pattern may be enlarged at a predetermined magnification and projected onto the substrate P, or may be reduced to a predetermined magnification and projected onto the substrate P.

As described above, in the cylindrical mask attachable to the exposure apparatus U3 of the present embodiment, as shown in FIGS. 8, 9, 14, 15, 18, and 19, the long length of the rectangular display screen area DPA When the direction is the Y-direction and two or more mask regions (masks M1, M2, M3, and M4) are arranged in the θ direction with a space Sx, the cylindrical mask (cylindrical drum 21) is It is configured as follows.

A mask pattern (masks M1 to M4) is formed along the cylindrical surface P1 of a certain radius Rm from the center line AX1, and is a cylindrical mask mounted rotatably around the center line, wherein A rectangular mask for a display panel including, on the cylindrical surface, a display screen area DPA of an aspect ratio Asp (= Ld / Lc) of a long side dimension Ld and a short side dimension Lc and a peripheral circuit area TAB adjacent to the periphery thereof. Areas (masks M1 to M4) are formed in the main direction (theta direction) of the cylindrical surface at intervals Sx, and are formed by arranging n (n≥2) pieces, and the lengthwise direction of the mask area (Y direction) The dimension L of e1 times the long side dimension Ld of the display screen area (magnification magnification e1≥1), and the dimension in the short length direction (θ direction) of the mask area e2 times the short side dimension Lc of the display screen area (enlargement) When the magnification e2≥1), the length of the direction (Y direction) of the center line of the cylindrical surface is the dimension L (= e1 · L). d) is set as above, and the total circumferential length πφ of the cylindrical surface having the diameter of the cylindrical surface as φ is set to n (e2 · Lc + Sx), and the ratio between the dimension L and the diameter φ is 1.3≤L / The diameter φ, the number n, and the spacing Sx are set so as to be in the range of φ≤3.8.

[Second Embodiment]

Next, with reference to FIG. 20, the exposure apparatus U3a of 2nd Embodiment is demonstrated. In addition, only parts different from the first embodiment will be described to avoid overlapping descriptions, and components identical to those in the first embodiment will be described with the same reference numerals as in the first embodiment. 20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. The exposure apparatus U3 of the first embodiment was configured to hold the substrate P passing through the projection region in the cylindrical substrate support drum 25, but the exposure apparatus U3a of the second embodiment was It is configured to hold the substrate P in a planar shape by the substrate support mechanism 12a capable of moving in the XY plane in one or two dimensions. Therefore, the board | substrate P in this embodiment may be not only the sheet | seat board | substrate of a single sheet based on flexible resin (PET, PEN, etc.), but also a thin sheet of sheet glass.

In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 and a substrate stage 102 having a support surface P2 that holds the substrate P in a planar shape. And a moving device (not shown) that scans and moves along the X direction in a plane orthogonal to the central plane CL.

Since the support surface P2 of the substrate P in FIG. 20 is a plane substantially parallel to the XY plane (a plane perpendicular to the center plane CL), it is reflected from the mask M, and the projection optical module PLM ( The main ray of the projection light beam EL2 that passes through the projection optical systems PL1 to PL6 and is projected onto the substrate P is set to be perpendicular to the XY plane.

Also in the second embodiment, if the projection magnification of the projection optical module PLM is equal to (× 1), the odd-numbered illumination area on the mask M, as viewed in the XZ plane, as in the previous FIG. 2, The circumferential length distance CCM from the center point of IR1 (and IR3, IR5) to the center point of even-numbered illumination areas IR2 (and IR4, IR6) is the odd number on the substrate P along the support surface P2. The distance CCP in the X direction (scanning exposure direction) from the center point of the projection areas PA1 (and PA3, PA5) to the center point of the even-numbered second projection areas PA2 (and PA4, PA6) is substantially the same. It is set.

In the exposure apparatus U3a in FIG. 20, the lower control apparatus 16 also controls the moving apparatus (linear motor for scanning exposure, actuator for microscopic movement, etc.) of the substrate support mechanism 12a, and the cylindrical mask M The substrate stage 102 is driven in precise synchronization with the rotation of the cylindrical drum 21 holding the. Therefore, the movement position of the substrate stage 102 in the X direction or the Y direction is accurately measured by a laser interferometer for measurement or a linear encoder, and the rotational position of the cylindrical drum 21 is accurately measured by a rotary encoder. do. In addition, the support surface P2 of the substrate stage 102 may be constituted by an adsorption holder that vacuum adsorbs and electrostatically adsorbs the substrate P during scanning exposure, and the support surface P2 and the substrate P A Bernoulli-shaped holder that supports a substrate P in a non-contact state or a low friction state by forming a static pressure gas bearing therebetween may be used.

In the case of the Bernoulli type holder, the substrate P is used as a flexible long sheet substrate (web), and the substrate P is provided while tension in the X direction (and Y direction) is applied to the substrate P. Since it can be moved in the X direction, the substrate stage 102 (Bernui type holder) does not need to be moved in the X and Y directions, and the support surface P2 also covers the projection areas PA1 to PA6. This is fine, and the size of the substrate stage 102 can be reduced. Further, in the case of the Bernoulli type holder, if the substrate P is a long sheet substrate, scanning exposure can be performed while continuously moving the substrate P in the long direction, so additional time such as adsorption / opening of the substrate P, etc. Compared to the case of the adsorption holder requiring a more suitable roll-to-roll method.

Like the exposure apparatus U3a, even when the support surface P2 is substantially parallel to the XY plane and the substrate P is supported in a flat shape, the masks M (M1 to M4) are cylindrical. The condition (L / Φ) of the shape of the cylindrical drum 21 held by satisfying the relationship described in the first embodiment above, so that the mask patterns of the display panels of various sizes can be efficiently mounted on the substrate P. In addition to being able to expose in line, a decrease in productivity can be suppressed.

[Third embodiment]

Next, with reference to FIG. 21, the exposure apparatus U3b of 3rd Embodiment is demonstrated. In addition, only parts different from the first and second embodiments will be described to avoid overlapping descriptions, and components identical to those of the first and second embodiments will be denoted by the same reference numerals as the first and second embodiments. Will be explained. 21 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the third embodiment. The exposure apparatus U3a of the second embodiment was configured to use a reflective mask in which the light reflected from the mask becomes the projection light beam EL2, but the exposure apparatus U3b of the third embodiment has transmitted light through the mask It is configured to use a transmissive mask serving as the projection light beam EL2.

In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a supports a cylindrical drum (mask holding drum) 21a that holds the mask MA in a cylindrical shape, and a mask holding drum 21a. A guide roller 93 is provided, a driving roller 98 for driving the mask holding drum 21a, and a driving unit 99.

The mask holding drum 21a forms a mask surface P1 on which the illumination area IR on the mask MA is disposed. In this embodiment, the mask surface is set as a cylindrical surface having a radius Rm (diameter phi = 2Rm) from the center line AX1 'extending in the Y direction. The cylindrical surface is, for example, the outer peripheral surface of the cylinder, the outer peripheral surface of the cylinder, and the like. The mask holding drum 21a is made of, for example, glass or quartz, and is configured as a ring-shaped transparent cylinder having a constant thickness, and its outer circumferential surface (cylindrical surface) forms a mask surface.

The mask MA is, for example, a transmissive planar sheet mask in which a pattern of a light shielding layer such as chromium is formed on one side of a very thin glass plate of rectangular shape with good flatness (for example, 100 to 500 µm thick). It is prepared, and it is curved along the outer circumferential surface of the mask holding drum 21a, and is used in a state where it is wound (pasted) on the outer circumferential surface. The mask MA has a pattern non-formation area where no pattern is formed, and is attached to the mask holding drum 21a in the pattern non-formation area (equivalent to the margins 92 around, etc.). Therefore, in this case, the mask MA is detachable from the mask holding drum 21a. Instead of wrapping the flat sheet mask around the outer circumferential surface of the mask holding drum 21a (ring-shaped transparent cylinder) to form a mask MA, chrome or the like is directly attached to the outer circumferential surface of the mask holding drum 21a by the ring-shaped transparent cylinder. The mask pattern by the light-shielding layer of may be drawn and integrated. Also in this case, the mask holding drum 21a functions as a support member (mask support member) of the mask MA.

The guide roller 93 and the drive roller 98 extend in the Y-axis direction parallel to the center line AX1 'of the mask holding drum 21a. The guide roller 93 and the driving roller 98 circumscribe the vicinity of the Y-direction end of the mask holding drum 21a, but do not contact the pattern forming region of the mask MA held by the mask holding drum 21a. It is prepared to prevent. The driving roller 98 is connected to the driving unit 99. The drive roller 98 rotates the mask holding drum 21a around the central axis by transmitting the torque supplied from the driving unit 99 to the mask holding drum 21a.

The light source device 13a of this embodiment is provided with the same light source (not shown) and a plurality of illumination optical systems ILa (ILa1 to ILa6) as in the first embodiment. A part or all of each illumination optical system ILa1 to ILa6 is disposed inside the mask holding drum 21a (ring-shaped transparent cylinder) and held on the outer circumferential surface (mask surface P1) of the mask holding drum 21a. Each of the illumination regions IR1 to IR6 on the mask MA is illuminated from the inside.

Each illumination optical system ILa1 to ILa6 includes a fly-eye lens, a rod integrator, and the like, and illuminates each illumination region IR1 to IR6 with a uniform illuminance by illumination light beam EL1. Further, the light source may be disposed inside the mask holding drum 21a or may be placed outside the mask holding drum 21a. Further, the light source may be provided separately from the exposure apparatus U3b, and may be guided via a light guide unit such as an optical fiber or a relay lens.

In the case of using a transmissive cylindrical mask as a mask, as in the present embodiment, the condition (L / φ) of the shape of the mask supporting drum 21a that holds the mask MA in a cylindrical shape is the same as in the first embodiment. By satisfying the relationship described, it is possible to efficiently expose the mask patterns of the display panels of various sizes on the substrate P, and to suppress the decrease in productivity.

As described above, the exposure apparatuses U3, U3a, and U3b of the first, second, and third embodiments are all provided on a cylindrical mask surface P1 (cylindrical drum 21, mask holding drum 21a). It was a system of projecting and exposing the formed mask pattern on the substrate P via the projection optical modules PLM (PL1 to PL6). However, in the case of using the transmissive cylindrical mask MA as in the third embodiment, the gap between the outer peripheral surface of the transmissive cylindrical mask (mask surface P1) and the surface of the substrate P to be exposed is constant. Proximity method in which the transmissive cylindrical mask MA and the substrate P are disposed close together and the substrate P is synchronously moved in one direction while rotating the transmissive cylindrical mask so as to be maintained at (several tens of μm to hundreds of μm). You may use it as a scanning exposure apparatus.

Moreover, in the exposure apparatuses U3, U3a, and U3b of each of the first to third embodiments, the diameter φ of the mountable cylindrical masks (cylindrical drum 21 and mask holding drum 21a) can be changed. In order to do so, a mechanism is provided that allows the support position (Z position) of the cylindrical mask to be adjusted, or a mechanism that adjusts the state of the optical element in the illumination optical system IL or the projection optical system PL. In that case, a range from the smallest diameter φ1 to the largest diameter φ2 exists in the diameter φ of the cylindrical mask to which the exposure apparatus can be mounted. Therefore, depending on the size of the display panel to be manufactured, when creating a cylindrical mask with one chamfer or multiple chamfers of the masks M, M1 to M4, with a relationship of 1.3≤L / φ≤3.8, φ1≤ φ≤φ2 It is preferable to set the shape dimensions of the cylindrical drum 21 and the mask holding drum 21a so that the relationship of the is satisfied.

<Device manufacturing method>

Next, a device manufacturing method will be described with reference to FIG. 22. 22 is a flow chart showing a device manufacturing method using a device manufacturing system.

In the device manufacturing method shown in Fig. 22, first, a function and performance design of a display panel using, for example, a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD or the like (step S201). Next, based on the mask pattern for each of the various layers designed by CAD or the like, a cylindrical mask for the required layer is produced (step S202). At this time, the cylindrical mask is manufactured such that the relationship between the diameter φ and the length L (La) satisfies 1.3 ≤ L / φ ≤ 3.8, and the condition that can be attached to the exposure apparatus, φ 1 ≤ φ ≤ φ 2. In addition, a supply roll FR1 on which a flexible substrate P (resin film, metal thin film, plastic, etc.) serving as a substrate for the display panel is wound is prepared (step S203). In addition, the roll-shaped substrate P prepared in step S203 has a surface modified as necessary, a base layer (e.g., fine irregularities by an imprint method) pre-formed, and light-sensitive function A film or a transparent film (insulating material) may be laminated in advance.

Next, on the substrate P, a back plane layer composed of electrodes, wiring, insulating film, TFT (thin film semiconductor), or the like constituting the display panel device is formed, and the organic layer is stacked on the backplane layer. A light emitting layer (display pixel portion) made of a self-luminous element such as EL is formed (step S204). In this step S204, a predetermined cylindrical mask is attached to the exposure apparatuses U3, U3a, U3b described in each of the preceding embodiments, and a photosensitive layer (photoresist layer) applied to the surface of the substrate P, After exposing the photosensitive silane coupling layer, etc.) to form an image (latent image, etc.) of the mask pattern on the surface, the substrate P on which the mask pattern is formed by exposure is developed as necessary, Treatments such as a wet process of forming a pattern (wiring, electrode, etc.) of a metal film by an electroless plating method, or a printing process of drawing a pattern with a conductive ink containing silver nanoparticles or the like are included.

Next, for each display panel device that is continuously produced on a long substrate P in a roll manner, the substrate P is diced or a protective film (large environment barrier layer) is applied to the surface of each display panel device. ) Or a color filter sheet or the like is bonded to assemble the device (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance or characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

DESCRIPTION OF SYMBOLS 1 Device manufacturing system 2 Board supply apparatus
4: Substrate recovery device 5: Upper control device
11: mask holding mechanism 12, 12a: substrate support mechanism
13: light source device 16: lower control device
21: cylindrical drum 21a: mask retaining drum
25: substrate support drum 31: light source
32: light guide member 41: 1/4 wave plate
51: collimator lens 52: fly-eye lens
53: condenser lens 54: cylindrical lens
55: Aperture of illumination field of view 56: Relay lens system
61: first optical system 62: second optical system
63: projection field of view aperture 64: focus correction optical member
65: optical member for image shift 66: optical member for magnification correction
67: rotation correction mechanism 68: polarization adjustment mechanism
70: first deflection member 71: first lens group
72: first concave mirror 80: second deflection member
81: second lens group 82: second concave mirror
92: margin P: substrate
FR1: Supply roll FR2: Recovery roll
U1 to Un: processing unit U3, U3a, U3b: exposure unit (substrate processing unit)
M, M1, M2, M3: Mask AX1: 1st axis
AX2: 2nd axis P1: Mask surface
P2: Support surface P7: Middle top surface
EL1: luminous flux EL2: projected luminous flux
Rm: radius of curvature Rp: radius of curvature
CL: Center plane PBS: Polarized beam splitter
IR1 ~ IR6: Lighting area IL1 ~ IL6: Lighting optical system
ILM: illumination optical modules PA1 ~ PA7: projection area
PLM: Projection Optical Module

Claims (10)

A pattern for a display panel having a display screen area having an aspect ratio defined by a ratio Ld / Lc of a long side dimension Ld and a short side dimension Lc, and a long length on a long flexible sheet substrate. A method of manufacturing a display panel comprising a step of transferring each of a plurality of regions along a direction, and creating the display panel on the sheet substrate,
The transfer process,
The display screen area and a mask pattern corresponding to each of the peripheral circuit areas provided adjacent to the periphery are formed in a rectangular shape, and a long longitudinal dimension is an enlarged magnification e1 (e1≥1) for the long side dimension Ld. One or more of the mask regions set as large and shorter in the longitudinal direction by the enlarged magnification e2 (e2≥1) for the short side dimension Lc is formed along the outer circumferential surface of the diameter φ of a certain radius from the center line, A cylindrical mask set such that the ratio L / φ of the dimension L in the direction of the center line of the outer circumferential surface and the diameter φ is in the range of 1.3 ≤ L / φ ≤ 3.8 is rotated at a predetermined rotational speed around the center line. That,
With the long direction of the sheet substrate set in the same direction as the circumferential direction of the outer circumferential surface of the cylindrical mask, at the same speed as the rotational speed of the cylindrical mask, the sheet substrate is moved in the long direction. To move,
On the outer circumferential surface of the cylindrical mask, illumination light is irradiated toward an illumination area set in a rectangular shape or a trapezoid shape extending in the direction of the center line, and light according to the mask pattern in the mask region displayed in the illumination area And transferring to the surface of the sheet substrate. The method according to claim 1,
When one of the mask regions is formed on the outer peripheral surface of the cylindrical mask,
The dimension L and the direction of the center line of the outer circumferential surface where the mask area is formed are set by setting the aspect ratio to Asp, the circumferential ratio π, and setting the short length direction of the mask area to the direction of the center line. The method of manufacturing a display panel, wherein the ratio L / φ with the diameter φ is set to L / φ = π · e2 / e1 · Asp. The method according to claim 1,
In the case where n (n≥2) mask regions are formed on the outer circumferential surface of the cylindrical mask,
By setting the aspect ratio to Asp, the circumferential ratio π, and setting the long length direction of each of the mask regions in the direction of the center line, and juxtaposing each of the mask regions in the circumferential direction with a space Sx therebetween. , The ratio L / φ of the dimension L in the direction of the center line of the outer circumferential surface where the n mask regions are formed and the diameter φ is L / φ = π · e1 · Asp · Lc / n (e2 · Lc + Sx). Display panel manufacturing method set. The method according to claim 2 or claim 3,
The ratio L / φ is further set in a range of 1.3≤L / φ≤2.6, the display panel manufacturing method. The method according to claim 2 or claim 3,
The enlarged magnification e1 and the enlarged magnification e2 are set to 1.2 or 1.15. The method according to claim 2 or claim 3,
In the mask pattern formed in the mask region of the cylindrical mask,
A method of manufacturing a display panel including a pattern corresponding to a configuration of a thin film semiconductor for driving each pixel disposed in the display screen area, and a pattern arranged in the peripheral circuit area and corresponding to a wiring for driving the thin film semiconductor. . The method according to claim 2 or claim 3,
A display panel manufacturing method in the display screen area, wherein the aspect ratio Asp by a liquid crystal display or an organic EL display corresponds to a 16: 9 or 2: 1 display screen. The method according to claim 2 or claim 3,
In the mask area of the cylindrical mask, the aspect ratio Asp is 16: 9 or 2: 1, and a mask pattern for a display panel having a diagonal length of 24 to 65 inches in the display screen area is formed. , Display panel manufacturing method. The method according to any one of claims 1 to 3,
A method of manufacturing a display panel, wherein the diameter φ of the cylindrical mask is set between 150 mm and 900 mm. The method according to any one of claims 1 to 3,
Prior to the transferring step, a step of forming a photosensitive functional layer on the surface of the sheet substrate is performed, and the photosensitive functional layer includes photoresist, photosensitive lyophilic modifier, and photosensitive plating. A method of manufacturing a display panel, which is formed by application of any one of a reducing material and a UV curable resin.

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