TW201445262A - Substrate processing apparatus, device manufacturing method, and cylindrical mask - Google Patents

Abstract

Provided are a substrate processing apparatus, whereby high-quality substrates can be manufactured with high productivity, a device manufacturing method, and a mask. The present invention is provided with: a mask supporting member that supports a mask pattern such that the pattern is supported along a first surface that is curved in a cylindrical surface shape at a predetermined curvature in a lighting region; a substrate supporting member that supports the substrate such that the substrate is supported along a predetermined second surface in a projection region; and a drive mechanism, which rotates the mask supporting member such that the mask pattern moves in the predetermined scanning exposure direction, and which also moves the substrate supporting member such that the substrate moves in the scanning exposure direction. The mask supporting member satisfies formula of 1.3 ≤ L/[phi] ≤ 3.8, where a diameter of the first surface is represented by [phi], and a first surface length in the direction orthogonal to the scanning exposure direction is represented by L.

Description

Substrate processing device, component manufacturing method, and cylindrical mask

The present invention relates to a substrate processing apparatus, a device manufacturing method, and a cylindrical reticle for use in which a pattern of a photomask is projected onto a substrate, and the pattern is exposed on the substrate.

There has been a component manufacturing system for manufacturing various elements such as display elements such as liquid crystal displays and semiconductors. The component manufacturing system includes a substrate processing apparatus such as an exposure device. In the substrate processing apparatus described in Patent Document 1, an image of a pattern formed on a mask of an illumination region is projected onto a substrate or the like disposed in a projection area, and the pattern is exposed on the substrate. The photomask used for the substrate processing apparatus has a planar shape, a cylindrical shape, or the like.

[Advanced technical literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-299918

In the substrate processing apparatus, the photomask can be made into a cylindrical shape to rotate the mask, and the exposure of the substrate can be continuously performed. Further, as the substrate processing apparatus, there is also a roll-to-roll method in which a substrate is formed into a thin strip shape and continuously fed under a projection area. In this manner, the substrate processing apparatus can rotate the cylindrical mask and use the roll-to-roll method as the substrate transfer method to continuously transport both the substrate and the mask.

Here, the substrate processing apparatus is generally required to be exposed to the substrate with good efficiency. Light out the pattern to enhance productivity. The same applies to the case where a cylindrical mask is used as the mask.

An object of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a cylindrical mask which can produce a high-quality substrate with high productivity.

According to a first aspect of the present invention, there is provided a substrate processing apparatus comprising: a projection optical system that projects a light beam from a pattern of a photomask disposed in an illumination light illumination region onto a projection region of the placement substrate, and is provided with a mask support The member supports the pattern of the reticle so as to be along the first surface curved in a cylindrical shape with a predetermined curvature in the illumination region; and the substrate supporting member is along the predetermined second surface in the projection region Supporting the substrate; and a driving mechanism that rotates the reticle supporting member in a manner that the pattern of the reticle moves in a predetermined scanning exposure direction, and moves the substrate supporting member in a manner that the substrate moves in the scanning exposure direction; When the diameter of the first surface is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, the mask supporting member is 1.3 ≦L/φ ≦3.8.

According to a second aspect of the present invention, there is provided a device manufacturing method comprising the operation of forming a pattern of the photomask on a substrate using a substrate processing apparatus according to a first aspect, and an operation of supplying the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, a cylindrical mask is provided, wherein a mask pattern for an electronic component is formed along a cylindrical outer peripheral surface, and is attached to a predetermined exposure apparatus and rotatable about a center line. a cylindrical base material having a length of the outer peripheral surface in the direction of the center line of La and a diameter of the outer peripheral surface of φ, and a maximum length of the mask pattern which can be formed on the outer peripheral surface of the cylindrical base material in the center line direction In the case of L, in the range of L ≦ La, the ratio L/φ of the aforementioned diameter φ to the aforementioned length L is set in the range of 1.3 ≦ L / φ ≦ 3.8.

According to an aspect of the present invention, the relationship between the diameter φ and the length L of the cylindrical mask shape held by the mask support member or the cylindrical surface shape of the pattern formed in the mask is set to The range is that the exposure and transfer of the element pattern can be performed with high productivity and efficiency. In addition, by setting the relationship between the diameter φ and the length L in the above range, it is possible to efficiently arrange various displays even when a plurality of patterns of the display panel are arranged in a plurality of faces along the circumferential surface of the cylindrical mask. The size of the panel.

1‧‧‧Component Manufacturing System

2‧‧‧Substrate supply unit

4‧‧‧Substrate recovery unit

5‧‧‧Upper control device

11‧‧‧Photomask retention mechanism

12, 12a‧‧‧ substrate support mechanism

13‧‧‧Light source device

16‧‧‧Lower control device

21‧‧‧Cylinder wheel

21a‧‧‧Photomask holder

22‧‧‧1st drive department

25‧‧‧Substrate support tube

26‧‧‧2nd drive department

27, 28‧‧ ‧ guide roller

31‧‧‧Light source

32‧‧‧Light guiding members

41‧‧‧1/4 wavelength plate

51‧‧‧ Collimating lens

52‧‧‧Future eye lens

53‧‧‧ Concentrating lens

54‧‧‧ cylindrical lens

55‧‧‧Lighting field of view

56‧‧‧Relay lens system

61‧‧‧1st Optical Department

62‧‧‧2nd Optical Department

63‧‧‧Projected field of view

64‧‧‧Focus correction optical components

65‧‧‧Optical components for switching

66‧‧‧ magnification correction optical components

67‧‧‧Rotary correction mechanism

68‧‧‧Polarization adjustment mechanism

70‧‧‧1st deflecting member

71‧‧‧1st lens group

72‧‧‧1st concave mirror

80‧‧‧2nd deflecting member

81‧‧‧2nd lens group

82‧‧‧2nd concave mirror

92‧‧‧ Yubai Department

94‧‧‧ cut line

96‧‧‧mask marks

96a‧‧‧Substrate marking

A3‧‧‧ pattern forming area

A4‧‧‧Non-patterned area

A7‧‧‧Exposure area

AMG1, AMG2‧‧‧ alignment microscope

ATB1, ATB2‧‧‧ air flip lever

AX1‧‧‧1st axis

AX2‧‧‧2nd axis

BT1~BT3‧‧‧Processing tank

BX1~BX3‧‧‧1st to 3rd optical axes

CL‧‧‧ center face

DL‧‧‧ buffer

DPA‧‧‧ display area

DR1~DR8‧‧‧ drive roller

EL1‧‧‧ illumination beam

EL2‧‧‧projection beam

EPC1~EPC3‧‧‧Edge position controller

FR1‧‧‧ supply reel

FR2‧‧Recycling reel

Gp1, Gp2‧‧‧ coating mechanism

HA1, HA2‧‧‧ heating room

IR1~IR6‧‧‧Lighting area

IL1~IL6‧‧‧Lighting Optics

ILM‧‧‧Lighting Optical Module

M, M1, M2, M3, M4‧‧‧ masks

P‧‧‧Substrate

P1‧‧‧Material cover

P2‧‧‧ bearing surface

P3, P4‧‧‧1st and 2nd reflecting surfaces

P7‧‧‧ intermediate image

PA1~PA7‧‧‧projection area

PBS‧‧‧ polarizing beam splitter

PL‧‧‧Projection Optics

PLM‧‧‧Projection Optical Module

R1‧‧‧ pressure roller

R2‧‧‧ coating roller

Rm‧‧‧ radius of curvature

Rp‧‧ radius of curvature

SF‧‧‧ axis

Sx‧‧ interval

TAB‧‧‧ peripheral circuit area

U1~Un‧‧‧Processing device

U3, U3a, U3b‧‧‧ exposure device (substrate processing device)

Fig. 1 is a view showing the overall configuration of a component manufacturing system of a first embodiment.

Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2.

4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

Fig. 5 is a view showing a state of an illumination beam irradiated to a cylindrical mask and a state of a projection beam emitted from a cylindrical mask.

Fig. 6 is a perspective view showing a schematic configuration of a cylindrical wheel and a photomask constituting a cylindrical mask.

Fig. 7 is a development view showing an arrangement example in which a mask for a display panel is taken on a mask surface of a cylindrical mask.

Fig. 8 is a developed view showing an arrangement example in which three masks of the same size are arranged in a row on the mask surface of the cylindrical mask.

Fig. 9 is a developed view showing an arrangement example in which four masks of the same size are arranged in a row on the mask surface of the cylindrical mask.

Fig. 10 is a developed view showing an arrangement example in which four masks of the same size are arranged in two rows and two rows on the mask surface of the cylindrical mask.

Fig. 11 is a development view showing an arrangement example in which two masks are used for a display panel with an aspect ratio of 2:1.

Figure 12 is a graph showing the relationship between the diameter of the simulated cylindrical mask and the width of the exposure slit at a specific allowable defocus amount.

Fig. 13 is a developed view showing a specific example when a 60-inch display panel is taken with one mask.

Fig. 14 is a developed view showing an arrangement example in which two masks are taken.

Fig. 15 is a developed view showing a first arrangement example in which two masks are taken from a 32-inch display panel.

Fig. 16 is a developed view showing a second arrangement example in which two masks are used for a 32-inch display panel.

Fig. 17 is a development view showing a specific example when a mask of a 32-inch display panel is taken from one surface.

Figure 18 shows the 32-inch display panel with a mask for 3 sides. An expanded view of a specific configuration example.

Figure 19 shows a 37-inch display panel with a mask taken from 3 sides. An expanded view of a specific configuration example.

Fig. 20 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment.

Fig. 21 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

Fig. 22 is a flow chart showing a method of manufacturing a component by a component manufacturing system.

The form (embodiment) for carrying out the invention will be described in detail below with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. Further, among the constituent elements described below, of course, those substantially conceivable by those skilled in the art are substantially the same. Furthermore, the constituent elements described below can be combined as appropriate. Further, various omissions, substitutions, and alterations of the components may be made without departing from the scope of the invention. For example, in the following embodiments, the case where the flexible display is manufactured as an element will be described as an example, but the invention is not limited thereto. The device may be a wiring substrate on which a wiring pattern formed of a copper foil or the like is formed, or a substrate on which a plurality of semiconductor elements (such as a transistor or a diode) are formed.

[First Embodiment]

In the first embodiment, the substrate processing apparatus that exposes the substrate to the substrate is an exposure apparatus. Further, the exposure apparatus is incorporated in a component manufacturing system in which various processes are applied to the exposed substrate to manufacture an element. First, the component manufacturing system will be described.

<Component Manufacturing System>

Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment. The component manufacturing system 1 shown in Fig. 1 is a production line (flexible display manufacturing line) for manufacturing a flexible display as a component. As the flexible display, for example, an organic EL display or the like is available. In the component manufacturing system 1, the substrate P is sent out from the supply reel FR1 in which the flexible substrate P is wound into a roll shape, and the processed substrate P is continuously subjected to various processes, and the processed substrate is processed. P is wound as a flexible element in the collection roll FR2, a so-called roll to roll method. In the component manufacturing system 1 of the first embodiment, the substrate P from which the film-form sheet is fed is fed from the supply reel FR1, and the substrate P sent from the supply reel FR1 is sequentially passed through n processing apparatuses U1. U2, U3, U4, U5, ... Un are wound up to the collection roll FR2. First, as a meta The substrate P to be processed by the manufacturing system 1 will be described.

For the substrate P, for example, a foil made of a metal or an alloy such as a resin film or stainless steel is used. The material of the resin film includes, for example, a polyethylene resin, a polypropylene resin, a polyester resin, a vinyl ethylene copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin. One or more of polystyrene resin and vinyl acetate resin.

The substrate P is preferably selected such that the coefficient of thermal expansion is remarkably large, and the amount of deformation which can be generated by heat in various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion can be set, for example, by mixing the inorganic filler into the resin film, and is set to be smaller than a threshold value corresponding to the process temperature or the like. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like. In addition, the substrate P may be a single layer body of extremely thin glass having a thickness of about 100 μm manufactured by a floating method or the like, or a laminate of the above-mentioned resin film, foil, or the like.

The substrate P configured in this manner is wound into a roll shape to be a supply roll FR1, and the supply roll FR1 is attached to the component manufacturing system 1. The component manufacturing system 1 equipped with the supply reel FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent from the supply reel FR1. Therefore, the processed substrate P is in a state in which a plurality of elements are connected. In other words, the substrate P sent from the supply reel FR1 is a multi-sided substrate. Further, the substrate P may be a person who has been modified by a predetermined pre-treatment, activating the surface, or forming a fine partition structure (concave-convex structure) for precise patterning on the surface.

The substrate P after the treatment is wound into a roll shape and recovered as a recovery roll FR2. The recovery reel FR2 is attached to a cutting device (not shown). a cutting device equipped with a recycling reel FR2, which divides (cuts) the processed substrate P into individual components, thereby forming a plurality of element. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side) and 10 m or more in the longitudinal direction (direction of the strip). Of course, the size of the substrate P is not limited to the above size.

In Fig. 1, the X direction, the Y direction, and the Z direction form an orthogonal orthogonal coordinate system. The X direction is in the horizontal plane, and the direction in which the supply reel FR1 and the recovery reel FR2 are connected is the left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front and rear directions in FIG. The Y direction is the axial direction of the supply reel FR1 and the recovery reel FR2. The Z direction is the vertical direction and is the upper and lower direction in FIG.

The component manufacturing system 1 includes a substrate supply device 2 that supplies the substrate P, a processing device U1 to Un that performs various processes on the substrate P supplied from the substrate supply device 2, and a substrate P that is processed by the processing device U1 to Un. The substrate recovery device 4 and the device upper control device 5 of the control element manufacturing system 1.

The supply reel FR1 is rotatably mounted to the substrate supply device 2. The substrate supply device 2 has an edge roller controller EPC1 that feeds the substrate P from the mounted supply roll FR1 and the position of the adjustment substrate P in the width direction (Y direction). The driving roller DR1 rotates while sandwiching the front and back surfaces of the substrate P, and feeds the substrate P from the supply reel FR1 toward the conveying reel FR2, whereby the substrate P is supplied to the processing devices U1 to Un. At this time, the edge position controller EPC1 moves the substrate P in such a manner that the position of the substrate P at the end portion (edge) in the width direction is within a range of ±10 μm to ± tens of μm with respect to the target position. The width direction is to correct the position of the substrate P in the width direction.

The recovery roll FR2 is rotatably mounted on the substrate recovery device 4. The substrate recovery device 4 has a driving roller that pulls the processed substrate P toward the side of the recovery roll FR2. The edge position controller EPC2 of the DR2 and the position of the adjustment substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while holding the front and back surfaces of the substrate P by the driving roller DR2, pulls the substrate P in the conveying direction, and rotates the collecting reel FR2 to wind the substrate P. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1 to correct the position of the substrate P in the width direction to prevent unevenness in the width direction of the end portion (edge) of the substrate P in the width direction.

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive decane coupling agent (photosensitive diametric liquid modifying material, photosensitive plating material, etc.), a UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with the application mechanism Gp1 and the drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the board|substrate P. The coating mechanism Gp1 has a press roll R1 for winding the substrate P and a coating roll R2 opposed to the press roll R1. The coating mechanism Gp1 sandwiches the substrate P with the press roll R1 and the application roll R2 while the supplied substrate P is wound around the press roll R1. Then, the application mechanism Gp1 rotates the pressure roller R1 and the application roller R2 to apply the photosensitive functional liquid to the application roller R2 while moving the substrate P in the conveyance direction. The drying mechanism Gp2 blows drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid to form photosensitivity on the substrate P. Functional layer.

The processing device U2 is a heating device that heats the substrate P transported from the processing device U1 to a predetermined temperature (for example, about 10 to 120 ° C) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 has a plurality of rollers and a plurality of air turn bars therein, and a plurality of rollers and a plurality of air flip bars constitute a substrate P Send the path. A plurality of rollers are disposed in contact with the back surface of the substrate P, and a plurality of air flip bars are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air flip levers are transport paths for lengthening the substrate P, and are in a serpentine transport path. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along the meandering conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature in order to match the temperature of the substrate P heated in the heating chamber HA1 with the ambient temperature of the post-processing (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers therein, and a plurality of rollers are arranged in a serpentine transport path in the same manner as the heating chamber HA1 in order to lengthen the transport path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being conveyed along the meandering conveyance path. On the downstream side in the transport direction of the cooling chamber HA2, a drive roller DR3 is provided, and the drive roller DR3 is rotated while sandwiching the substrate P passing through the cooling chamber HA2, whereby the substrate P is supplied to the processing device U3.

The processing apparatus (substrate processing apparatus) U3 is an exposure apparatus that supplies a substrate (photosensitive substrate) P on which a photosensitive functional layer is formed from the processing apparatus U2, and projects a pattern such as an exposure display circuit or wiring. As will be described later in detail, the processing device U3 illuminates the reflective cylindrical mask M (cylinder wheel 21) with an illumination beam, and projects a projection beam of the illumination beam reflected by the mask M onto the substrate P. The processing device U3 has a drive roller DR4 that feeds the substrate P supplied from the processing device U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR4 rotates while sandwiching the front and back surfaces of the substrate P, and feeds the substrate P to the downstream side in the transport direction, thereby supplying the substrate P to the rotating substrate (substrate supporting cylinder) 25 for supporting the substrate P at the exposure position. . The edge position controller EPC3 is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position.

The processing unit U3 includes a buffer unit DL that transports the substrate P to the two sets of driving rollers DR6 and DR7 on the downstream side in the transport direction in a state where the exposed substrate P is slackened. The two sets of driving rollers DR6 The DR7 is disposed at a predetermined interval in the transport direction of the substrate P. The driving roller DR6 holds the upstream side of the transported substrate P and rotates, and the driving roller DR7 sandwiches the downstream side of the transported substrate P and rotates, whereby the substrate P is supplied to the processing device U4. At this time, since the substrate P is provided with slack, it is possible to absorb the fluctuation in the conveyance speed which is generated on the downstream side in the conveyance direction of the drive roller DR7, and it is possible to eliminate the influence of the fluctuation of the conveyance speed on the exposure processing of the substrate P. Further, in the processing apparatus U3, the relative position of the image of the portion of the mask pattern of the cylindrical mask M (hereinafter, also referred to as the mask M only) is aligned with the relative position of the substrate P (alignment, alignment) The alignment microscopes AMG1 and AMG2 for detecting an alignment mark formed on the substrate P or a reference pattern formed on a part of the outer circumferential surface of the rotary cylinder (substrate support cylinder) 25 are provided.

The processing apparatus U4 is a wet processing apparatus which performs wet development processing, electroless plating processing, etc. on the substrate P which has been exposed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 which are stepped in the vertical direction (Z direction) and a plurality of rollers that transport the substrate P. The plurality of rollers are arranged such that the substrate P sequentially passes through the transport paths inside the three processing tanks BT1, BT2, and BT3. A driving roller DR8 is provided on the downstream side in the conveying direction of the processing tank BT3, and the driving roller DR8 is rotated while sandwiching the substrate P that has passed through the processing tank BT3, whereby the substrate P is supplied to the processing apparatus U5.

Although not shown in the drawings, the processing device U5 is a drying device that dries the substrate P transferred from the processing device U4. The processing apparatus U5 removes the droplets adhering to the substrate P by the wet processing in the processing apparatus U4, and adjusts the moisture content of the substrate P. The substrate P dried by the processing device U5 is transported to the processing device Un via a plurality of processing devices. In After the treatment device Un is processed, the substrate P is wound around the collection reel FR2 of the substrate recovery device 3.

The upper control device 5 integrally controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4, and transports the substrate P from the substrate supply device 2 to the substrate recovery device 4. Further, the upper control device 5 controls a plurality of processing devices U1 to Un in synchronization with the transfer of the substrate P to perform various processes on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 5 . Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2. Fig. 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig. 2. Fig. 5 is a view showing a state in which an illumination beam that is incident on a reticle and a projection beam that is emitted from the reticle are emitted.

The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and an image of a mask pattern formed on the outer circumferential surface of the cylindrical mask M is projected onto the surface of the substrate P while the substrate P is conveyed in the conveyance direction. 2 is an orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction, and is the same orthogonal coordinate system as that of FIG. 1.

First, the mask M (the cylindrical mask M in Fig. 1) for the exposure device U3 will be described. The mask M is, for example, a reflective mask made of a metal cylindrical body. The pattern of the mask M is a cylindrical base material formed on the outer peripheral surface (circumferential surface) of the curvature radius Rm centering on the first axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface formed with a predetermined mask pattern (No. 1 side) P1. The mask surface P1 includes a high reflection portion that reflects the light beam with high efficiency in a predetermined direction, and a reflection suppression portion (low reflection portion) that does not reflect the light beam in a predetermined direction or reflects the light beam with low efficiency. The mask pattern is formed by a high reflection portion and a reflection suppressing portion. Here, the reflection suppressing unit may reduce the amount of light reflected in a predetermined direction. Therefore, the reflection suppressing portion can absorb a material of light, a material that penetrates light, or a material that diffracts light except for a specific direction. In the exposure device U3, as the mask M having the above configuration, a photomask made of a metal base material such as aluminum or SUS can be used. Therefore, the exposure device U3 can be exposed using an inexpensive photomask.

Further, the mask M may be formed in whole or in part of a pattern for a panel in which one display element is formed, or may be a pattern for a panel in which a plurality of display elements are formed. Further, the mask M may be a panel pattern which is formed by repeatedly forming a plurality of faces in a circumferential direction around the first axis AX1, or a pattern for a small panel which is formed in a direction parallel to the first axis AX1 to form a plurality of faces. . Further, the mask M may be a multi-faceted pattern of a pattern for a panel in which a first display element is formed and a pattern for a panel of a second display element having a size different from that of the first display element. In addition, the mask M is not limited to the shape of the cylindrical body as long as it has a circumferential surface having a radius of curvature Rm around the first axis AX1. For example, the reticle M may be an arc-shaped plate material having a circumferential surface. Further, the mask M may be in the form of a thin plate, or may be formed by bending the mask M into a circumferential surface.

Next, the exposure device U3 shown in Fig. 2 will be described. The exposure device U3 includes a mask holding mechanism 11, a substrate supporting mechanism 12, an illumination optical system IL, in addition to the above-described driving rollers DR4, DR6, DR7, the substrate supporting cylinder 25, the edge position controller EPC3, and the alignment microscopes AMG1, AMG2. The projection optical system PL and the lower control device 16. The exposure device U3 illuminates the illumination light emitted from the light source device 13 through one of the illumination optical system IL and the projection optical system PL. The mask surface P1 of the mask M which is supported by the mask holding cylinder 21 (hereinafter also referred to as the cylinder wheel 21) of the mask holding mechanism 11 and which is reflected by the mask surface P1 of the mask M The light beam (imaging light) is projected through the projection optical system PL to the substrate P supported by the substrate supporting cylinder 25 of the substrate supporting mechanism 12.

The lower control device 16 controls each unit of the exposure device U3 so that each unit performs processing. The lower control device 16 may be part or all of the upper control device 5 of the component manufacturing system 1. Further, the lower control device 16 may be another device that is controlled by the higher-level control device 5 and is different from the higher-level control device 5. The lower control device 16, for example, includes a computer.

The mask holding mechanism 11 has a cylindrical wheel 21 that holds the mask M and a first driving unit 22 that rotates the cylindrical wheel 21. The cylindrical wheel 21 holds the mask M in a cylinder having a radius of curvature Rm with the first axis AX1 of the mask M as a center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the cylindrical wheel 21 about the first axis AX1.

Further, the cylindrical wheel 21 of the mask holding mechanism 11 has a mask pattern formed directly on the outer peripheral surface thereof by the high reflection portion and the low reflection portion, but is not limited to this configuration. The cylindrical wheel 21 as the mask holding mechanism 11 can be held by winding a thin plate-shaped reflective mask M along its outer peripheral surface. Further, the cylindrical wheel 21 as the mask holding mechanism 11 may be detachably held by the outer circumferential surface of the cylindrical wheel 21 by a plate-shaped reflective mask M which is bent in an arc shape with a radius Rm.

The substrate supporting mechanism 12 includes a substrate supporting cylinder 25 that supports the substrate P, a second driving portion 26 that rotates the substrate supporting cylinder 25, a pair of air turning levers ATB1 and ATB2, and a pair of guide rollers 27 and 28. The substrate supporting cylinder 25 is formed in a cylindrical shape having a peripheral surface (circumferential surface) having a radius of curvature centering on the second axis AX2 extending in the Y direction and having a radius Rp. Here, the first axis AX1 and the second axis AX2 are parallel to each other to pass (including) the first axis AX1 and the second axis AX2 The face is the center face CL. One of the circumferential faces of the substrate supporting cylinder 25 is a supporting surface P2 of the supporting substrate P. In other words, the substrate supporting cylinder 25 is supported by the substrate P so as to be wound around the supporting surface P2 so as to be bent in a cylindrical shape. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 around the second axis AX2. The pair of air flip levers ATB1 and ATB2 and the pair of guide rollers 27 and 28 are interposed (interposed) with the substrate support cylinders 25 on the upstream side and the downstream side in the transport direction of the substrate P. The guide roller 27 guides the substrate P conveyed from the driving roller DR4 to the substrate supporting cylinder 25 through the air turning lever ATB1, and the guide roller 28 guides the substrate P conveyed from the air turning lever ATB2 via the substrate supporting cylinder 25 to the driving roller. DR6.

In the substrate supporting mechanism 12, the substrate supporting cylinder 25 is rotated by the second driving unit 26, whereby the substrate P introduced into the substrate supporting cylinder 25 is supported by the supporting surface P2 of the substrate supporting cylinder 25, and is sent at a predetermined speed. Length direction (X direction).

At this time, the first drive unit 22 and the second drive unit 26 are connected to the lower position control device 16, and the cylindrical wheel 21 and the substrate support tube 25 are synchronously rotated at a predetermined rotational speed ratio, whereby the light formed in the mask M is formed. The projection image of the mask pattern of the cover P1 is continuously scanned and exposed to the surface of the substrate P wound around the support surface P2 of the substrate support cylinder 25 (the surface curved along the circumferential surface). The exposure device U3, the first drive unit 22, and the second drive unit 26 are the moving mechanisms of the embodiment. Further, in the exposure apparatus U3 shown in FIG. 2, the portion of the guide roller 27 located on the upstream side in the transport direction of the substrate P is a substrate supply portion for supplying the substrate P to the support surface P2 of the substrate support cylinder 25. The supply reel FR1 shown in Fig. 1 can be directly provided in the substrate supply portion. Similarly, the portion of the guide roller 28 located on the downstream side in the transport direction of the substrate P is a substrate collecting portion that recovers the substrate P from the support surface P2 of the substrate supporting cylinder 25. In the substrate recovery unit, the recovery reel FR2 shown in Fig. 1 can be directly provided.

The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. Light source The arrangement 13 has a light source 31 and a light guiding member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is a solid-state laser light source such as a lamp light source such as a mercury lamp, a gas laser light source such as a pseudo-molecular laser, a laser diode, or a light-emitting diode (LED). The illumination light emitted from the light source 31 can utilize the ultraviolet light (g line, h line, i line) in the case of using, for example, a mercury lamp, and KrF excimer laser light (wavelength) in the case of using an excimer laser light source. 248 nm) and far ultraviolet light (DUV light) such as ArF excimer laser light (wavelength 193 nm). Here, it is preferable that the light source 31 emits an illumination light beam EL1 having a shorter wavelength than the i-line (wavelength of 365 nm). As such an illumination light beam EL1, laser light (wavelength 355 nm) emitted as the third harmonic of the YAG laser and laser light (wavelength 266 nm) emitted as the fourth harmonic of the YAG laser can be used.

The light guiding member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guiding member 32 can be configured using an optical fiber, a relay module of a mirror, or the like. Further, when the plurality of illumination optical systems IL are provided, the light guiding member 32 divides the illumination light beam EL1 from the light source 31 into a plurality of stripes, and then guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. In the light guiding member 32 of the present embodiment, light from the illumination light beam EL1 emitted from the light source 31 in a predetermined polarization state is incident on the polarization beam splitter PBS. The polarizing beam splitter PBS is a light beam that is provided between the mask M and the projection optical system PL by illuminating the mask M in a vertical manner, and reflects a linearly polarized light beam of the S-polarized light to penetrate the light beam of the P-polarized linearly polarized light. Therefore, the light source device 13 is an illumination light beam EL1 that emits a light beam that is incident on the polarization beam splitter PBS and that is a linearly polarized (S-polarized) light beam. The light source device 13 emits a polarized laser beam having a uniform wavelength and phase to the polarization beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 stores the optical fiber as a light guiding member 32 using a deflecting surface, and conducts light while maintaining the polarized light output from the light source device 13 in a polarized state. Further, for example, the optical fiber may be guided by the optical fiber and outputted by the polarizing plate. The light output from the fiber is polarized. That is, the light source device 13 may polarize the randomly polarized light beam by the polarizing plate when the beam of the randomly polarized light is guided. Further, the light source device 13 can guide the light beam output from the light source 31 by using a relay optical system such as a lens.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is a so-called multi-lens type exposure apparatus. Further, in Fig. 3, a plan view (left side view of Fig. 3) of the illumination region IR held by the mask M held by the cylindrical wheel 21 from the -Z side is shown, and the substrate P supported by the substrate support cylinder 25 is shown. The top view of the projection area PA seen from the +Z side (the right side of FIG. 3). The symbol Xs of Fig. 3 represents the moving direction (rotational direction) of the cylindrical wheel 21 and the substrate supporting cylinder 25. The multi-lens type exposure device U3 illuminates the illumination light beams EL1 on a plurality of (for example, six in the first embodiment) illumination regions IR1 to IR6, and illuminates the illumination light beams EL1 in the respective illumination regions IR1. The plurality of projection light beams EL2 obtained by the reflection of the IR6 are projected onto the substrate P by a plurality of (for example, six in the first embodiment) projection areas PA1 to PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, the plurality of illumination regions IR1 to IR6 sandwich the center plane CL, and the first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are disposed on the mask M on the upstream side in the rotation direction. The second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotation direction. Each of the illumination regions IR1 to IR6 has an elongated trapezoidal region extending in a parallel short side and a long side in the axial direction (Y direction) of the mask M. At this time, each of the illumination regions IR1 to IR6 of the trapezoid has a region in which the short side is on the side of the center plane CL and the long side thereof is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at a predetermined interval in the axial direction. Further, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is arranged in the axial direction. 1 between the illumination area IR1 and the third illumination area IR3. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 is arranged such that the triangular portions of the oblique side portions of the trapezoidal illumination regions adjacent in the Y direction are overlapped with each other in the circumferential direction (X direction) of the mask M. Further, in the first embodiment, each of the illumination regions IR1 to IR6 is a trapezoidal region, but may be a rectangular region.

Further, the mask M has a pattern forming region A3 in which a mask pattern is formed, and a non-pattern forming region A4 in which a mask pattern is not formed. The non-pattern forming region A4 is a low reflection region (reflection suppressing portion) that does not easily reflect the illumination light beam EL1, and is disposed in a frame shape around the pattern forming region A3. The first to sixth illumination regions IR1 to IR6 are arranged to cover the full width of the pattern formation region A3 in the Y direction.

The illumination optical system IL has a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on a plurality of illumination optical systems (divided illumination optical systems) IL1 to IL6. Each of the illumination optical systems IL1 to IL6 guides each of the illumination light beams EL1 incident from the light source device 13 to each of the illumination regions IR1 to IR6. In other words, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination region IR1, and the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination regions IR2 to IR6. . The plurality of illumination optical systems IL1 to IL6 are disposed on the side of the first, third, and fifth illumination regions IR1, IR3, and IR5 (on the left side in FIG. 2) with the center plane CL interposed therebetween, and the first illumination optical system IL1 and the third portion are disposed. The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. also, The plurality of illumination optical systems IL1 to IL6 are disposed on the side of the second, fourth, and sixth illumination regions IR2, IR4, and IR6 (on the right side in FIG. 2) with the center plane CL interposed therebetween, and the second illumination optical system IL2, fourth is disposed. The illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction, and the third illumination optical. Between the IL3 and the fifth illumination optical system IL5, between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. Further, the first illumination optical system IL1, the third illumination optical system IL3, the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged from the Y direction. Into symmetry.

Next, each of the illumination optical systems IL1 to IL6 will be described with reference to Fig. 4 . In addition, since the configuration of each of the illumination optical systems IL1 to IL6 is the same, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.

The illumination optical system IL illuminates the illumination region IR (first illumination region IR1) with uniform illumination, and subjects the illumination light beam EL1 from the light source 31 of the light source device 13 to the illumination region IR on the mask M. Further, the illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL has an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 in this order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM sequentially includes a collimating lens 51 and a fly-eye lens 52 from the incident side of the illumination light beam EL1. The plurality of condenser lenses 53, the cylindrical lens 54, the illumination field stop 55, and the relay lens system 56 are provided on the first optical axis BX1. The collimator lens 51 is incident on the light emitted from the light guiding member 32 and is incident on the entire incident side surface of the fly-eye lens 52. The center of the exit side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 generates an image of the surface light source that is divided into a plurality of point light source images by the illumination light beam EL1 from the collimator lens 51. The illumination light beam EL1 is generated from the surface light source image. At this time, the surface on the emission side of the fly-eye lens 52 that generates the point light source image is transmitted through the illumination field stop 55 from the fly-eye lens 52 to the first concave mirror 72 of the projection optical system PL to be described later, and the first concave mirror 72. The pupil plane on which the reflecting surface is located is optically conjugated. The optical axis of the collecting lens 53 provided on the emission side of the fly-eye lens 52 is disposed on the first optical axis BX1. The condensing lens 53 superimposes the light from each of the plurality of point light source images formed on the emission side of the fly-eye lens 52 on the illumination field stop 55, and then illuminates the illumination field stop 55 with a uniform illuminance distribution. The illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination area IR shown in FIG. 3, and the center of the opening is disposed on the first optical axis BX1. By the relay lens system (imaging system) 56, the polarization beam splitter PBS, and the quarter-wave plate 41 disposed in the optical path from the illumination field stop 55 to the mask M, the opening of the illumination field stop 55 is It is configured to be optically conjugate with the illumination area IR on the mask M. The relay lens system 56 is composed of a plurality of lenses 56a, 56b, 56c, and 56d arranged along the first optical axis BX1, and illuminates the illumination light beam EL1 that has penetrated the opening of the illumination field stop 55 through the polarization beam splitter PBS. The illumination area IR on the cover M. A cylindrical lens 54 is provided at a position on the emission side of the condensing lens 53 adjacent to the illumination field stop 55. The cylindrical lens 54 is a plano-convex lens in which the incident side is a flat surface and the emitting side is a convex cylindrical lens surface. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 converges the principal rays of the illumination light beam EL1 that illuminate the illumination region IR on the mask M in the XZ plane, and makes them parallel in the Y direction.

The polarizing beam splitter PBS is disposed in the illumination optical module ILM and the central surface CL between. The polarization beam splitter PBS reflects a light beam that is linearly polarized by the S-polarized surface on the wave-plane division surface, and penetrates the light beam that linearly polarizes the P-polarized light. Here, if the illumination light beam EL1 incident on the polarization beam splitter PBS is linearly polarized with S-polarized light, the illumination light beam EL1 is reflected on the wavefront division surface of the polarization beam splitter PBS, and penetrates the quarter-wavelength plate 41 to become circularly polarized light. The illumination area IR on the reticle M is illuminated. The projection beam EL2 reflected by the illumination region IR on the mask M is converted from circularly polarized light to linear P-polarized light by passing through the 1⁄4 wavelength plate 41 again, penetrates the wavefront splitting surface of the polarization beam splitter PBS, and then faces the projection optics. Is PL. The polarization beam splitter PBS is preferably capable of reflecting a large portion of the illumination beam EL1 incident on the wavefront division surface and allowing most of the projection beam EL2 to penetrate. The polarization separation characteristic of the wavefront splitting surface of the polarizing beam splitter PBS is represented by the extinction ratio, and since the extinction ratio is also changed by the incident angle of the light toward the wavefront dividing surface, the characteristics of the wavefront dividing surface are practical. The effect of the upper imaging performance is not a problem, and the design is also considered in consideration of the NA (the number of openings) of the illumination beam EL1 and the projection beam EL2.

Fig. 5 is an enlarged view of the operation of the illumination light beam EL1 irradiated on the illumination region IR of the mask M and the projection light beam EL2 reflected in the illumination region IR on the XZ plane (the surface perpendicular to the first axis AX1). As shown in FIG. 5, the illumination optical system IL is configured such that the chief ray of the projection light beam EL2 reflected by the illumination region IR of the mask M is telecentric (parallel), and is illuminated by the illumination region IR of the reticle M. Each of the chief rays of the light beam EL1 is intentionally in a non-telecentric state on the XZ plane (the surface perpendicular to the first axis AX1), and is in a telecentric state in the YZ plane (parallel to the center plane CL). This characteristic of the illumination beam EL1 is imparted by the cylindrical lens 54 shown in FIG.

Specifically, the intersection of the line passing through the center point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 and the circle 1/2 of the radius Rm of the mask surface P1 is set. In the case of Q2 (1/2 radius position), the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that the principal rays of the illumination light beam EL1 passing through the illumination region IR face the intersection point Q2 on the XZ plane. As a result, the principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state parallel to the line passing through the first axis AX1, the point Q1, and the intersection Q2 (telecentric) in the XZ plane.

Next, a plurality of projection areas PA1 to PA6 projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to a plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P sandwich the center plane CL, and the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are disposed on the substrate P on the upstream side in the transport direction. The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are disposed on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 has an elongated trapezoidal (rectangular) region extending in the width direction (Y direction) of the substrate P in the width direction (longitudinal direction). At this time, each of the projection regions PA1 to PA6 of the trapezoid is a region in which the short side is located on the center plane CL side and the long side thereof is located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. Each projection area PA1~PA6, and each illumination area IR1~IR6 Similarly, the triangular portions of the oblique side portions of the trapezoidal projection area PA adjacent to each other in the Y direction are arranged to overlap each other in the transport direction of the substrate P. At this time, the projection area PA has a shape in which the exposure amount in the overlap region of the adjacent projection region PA is substantially the same as the exposure amount in the non-overlapping region. Further, the first to sixth projection areas PA1 to PA6 are arranged to cover the full width in the Y direction of the exposure area A7 exposed on the substrate P.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the illumination area IR2 (and IR4, IR6) is set. The circumference from the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection area PA2 (and PA4, PA6) is substantially equal.

The projection optical system PL is provided in plural plural numbers (for example, six in the first embodiment) for a plurality of projection areas PA1 to PA6. The plurality of projection optical systems (segmented projection optical systems) PL1 to PL6 respectively enter a plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6. Each of the projection optical systems PL1 to PL6 guides each of the projection light beams EL2 reflected by the mask M to the respective projection areas PA1 to PA6. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are from the second to sixth illuminations. Each of the projection beams EL2 of the regions IR2 to IR6 is guided to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are disposed on the side of the first, third, and fifth projection regions PA1, PA3, and PA5 (on the left side in FIG. 2) with the center plane CL interposed therebetween, and the first projection optical system PL1 is disposed. 3 Projection optical system PL3 and fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of projection optical systems PL1 to PL6 are disposed on the side of the second, fourth, and sixth projection regions PA2, PA4, and PA6 (on the right side in FIG. 2) with the center plane CL interposed therebetween. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are disposed. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction, and the third projection. The optical system PL3 is separated from the fifth projection optical system PL5 and between the fourth projection optical system PL4 and the sixth projection optical system PL6. Further, the first projection optical system PL1, the third projection optical system PL3, the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are viewed from the Y direction. Configured to be symmetrical.

Referring again to Fig. 4, each of the projection optical systems PL1 to PL6 will be described. In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects an image of the mask pattern of the illumination region IR (first illumination region IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL sequentially includes the quarter-wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM from the incident side of the projection light beam EL2 from the mask M.

The 1⁄4 wavelength plate 41 and the polarization beam splitter PBS are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wavelength plate 41 and a polarization beam splitter PBS.

The projection light beam EL2 reflected by the illumination region IR is incident on the projection optical system PL in a telecentric state (a state in which the principal rays are parallel to each other). Circularly polarized in the illumination area IR The projection beam EL2 is converted from circularly polarized light into linearly polarized light (P-polarized light) by the quarter-wavelength plate 41, and then incident on the polarization beam splitter PBS. The projection beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and is incident on the projection optical module PLM.

The projection optical module PLM is corresponding to the illumination optical module ILM. In other words, the projection optical module PLM of the first projection optical system PL1 projects the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 onto the substrate P. The first projection area PA1. Similarly, the projection optical modules LM of the second to sixth projection optical systems PL2 to PL6 will be illuminated by the second to sixth illumination regions IR2 of the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of IR6 is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that images an image of the mask pattern in the illumination region IR on the intermediate image plane P7, and at least an intermediate image that images the first optical system 61. A part of the second optical system 62 that is re-imaged on the projection area PA of the substrate P and a projection field stop 63 that is disposed on the intermediate image plane P7 of the intermediate image. Further, the projection optical module PLM includes a focus correction optical member 64, an image switching optical member 65, a magnification correction optical member 66, a rotation correcting mechanism 67, and a polarization adjusting mechanism (polarization adjusting means) 68.

The first optical system 61 and the second optical system 62 are, for example, a telecentric optical refraction optical system in which Dyson is deformed. In the first optical system 61, the optical axis (hereinafter referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70 , a first lens group 71 , and a first concave mirror 72 . The first deflecting member 70 has a triangular ridge of the first reflecting surface P3 and the second reflecting surface P4. The first reflecting surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and causes the reflected projection light beam EL2 to enter the first lens group 71 through the first lens group 71. The face of the concave mirror 72. The second reflecting surface P4 is incident on the projection light beam EL2 reflected by the first concave mirror 72 through the first lens group 71, and reflects the incident projection light beam EL2 on the surface of the projection field stop 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61, and is set to be optically conjugate with a plurality of point light source images generated by the fly-eye lens 52.

The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflection surface P3 of the first deflecting member 70, and is incident on the first concave mirror 72 through the field of view of the upper half of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, and is incident on the second reflection surface P4 of the first deflecting member 70 through the field of view of the lower half of the first lens group 71. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, passes through the focus correction optical member 64 and the image switching optical member 65, and is incident on the projection field stop 63.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, when the opening shape of the illumination field stop 55 in the illumination optical system IL is a trapezoid similar to the substantial shape of the projection area PA, the projection field stop 63 can be omitted.

The configuration of the second optical system 62 is the same as that of the first optical system 61, and is disposed symmetrically with the first optical system 61 with the intermediate image plane P7 interposed therebetween. In the second optical system 62, the optical axis (hereinafter, referred to as the third optical axis BX3) is substantially orthogonal to the center plane CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80 , a second lens group 81 , and a second concave mirror 82 . The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 reflects the projection light beam EL2 from the projection field stop 63, and causes the reflected projection light beam EL2 to enter the surface of the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a projection light beam EL2 reflected by the second concave mirror 82 After passing through the second lens group 81, the incident projection light beam EL2 is reflected toward the surface of the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62, and is set to be optically conjugate with a plurality of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the field stop 63 is reflected by the third reflection surface P5 of the second deflecting member 80, passes through the field of view of the upper half of the second lens group 81, and is incident on the second concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view of the lower half of the second lens group 81, and is incident on the fourth reflection surface P6 of the second deflecting member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected on the fourth reflection surface P6, and is projected onto the projection area PA by the magnification correction optical member 66. Accordingly, the image of the mask pattern in the illumination region IR is projected onto the projection area PA by a factor of (×1).

The focus correction optical member 64 is disposed between the first deflecting member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the image focusing state of the mask pattern projected on the substrate P. The focus correction optical member 64 is, for example, superposed two wedge-shaped turns (reverse in the X direction in FIG. 4) into a parallel plate which is transparent as a whole. The pair of rakes are slid in the direction of the slope without changing the interval between the faces facing each other, that is, the thickness of the parallel flat plate can be made variable. In this way, fine adjustment of the effective optical path length of the first optical system 61 can be performed, and fine adjustment of the in-focus state of the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be performed.

The switching optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. The switching optical member 65 adjusts the image of the mask pattern projected on the substrate P to be movable in the image plane. The switching optical member 65 is a transparent parallel plate glass which can be inclined in the XZ plane of FIG. 4 and a transparent parallel plate glass structure which can be inclined in the YZ plane of FIG. to make. By adjusting the amount of tilt of the two parallel flat glass sheets, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is disposed between the second deflecting member 80 and the substrate P. For the magnification correction optical member 66, for example, three pieces of a concave lens, a convex lens, and a concave lens are arranged coaxially at a predetermined interval, and the front and rear concave lenses are fixed, and the convex lens between them is moved in the optical axis (main ray) direction. In this way, the image of the mask pattern formed in the projection area PA can be slightly enlarged or reduced while maintaining the image state of the telecentric. Further, the optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2.

The rotation correcting mechanism 67 rotates the first deflecting member 70 slightly around the axis parallel to the Z axis by, for example, an actuator (not shown). The rotation correcting mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the intermediate image plane P7 by the rotation of the first deflecting member 70.

The polarization adjusting mechanism 68 rotates the quarter-wavelength plate 41 about an axis orthogonal to the plane of the board by an actuator (not shown) to adjust the polarization direction. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected to the projection area PA by rotating the quarter-wavelength plate 41.

In the projection optical system PL configured in this manner, the projection light beam EL2 from the mask M is emitted from the illumination region IR in a telecentric state (a state in which the principal rays are parallel to each other), and passes through the 1⁄4 wavelength plate 41 and the polarization beam splitter. After the PBS, it enters the first optical system 61. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflection surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, and is reflected by the first concave mirror 72 after passing through the first lens group 71. First concave mirror The reflected light beam EL2 reflected by the first lens group 71 is again reflected by the second reflecting surface (planar mirror) P4 of the first deflecting member 70, passes through the focus correcting optical member 64 and the image switching optical member 65, and is incident on the projection. The field of view is 63. The projection light beam EL2 of the projection field stop 63 is reflected by the third reflection surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and is reflected by the second concave mirror 82 after passing through the second lens group 81. The projection light beam EL2 reflected by the second concave mirror 82 is again reflected by the second lens group 81 on the fourth reflection surface (planar mirror) P6 of the second deflection member 80, and then incident on the magnification correction optical member 66. The projection light beam EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination region IR is projected to the projection area PA at a magnification (×1).

In the present embodiment, the second reflecting surface (planar mirror) P4 of the first deflecting member 70 and the third reflecting surface (planar mirror) P5 of the second deflecting member 80 are inclined with respect to the center plane CL (or the optical axes BX2 and BX3). The first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (planar mirror) P6 of the second deflecting member 80 are set to the center plane CL (or the optical axes BX2 and BX3). It is an angle other than 45°. The angle α° (absolute value) of the first reflecting surface P3 of the first deflecting member 70 with respect to the center plane CL (or the optical axis BX2) is a straight line passing through the point Q1, the intersection Q2, and the first axis AX1 in Fig. 5 . When the angle with the center plane CL is set to θs°, the relationship is α°=45°+θs°/2. Similarly, the angle β (absolute value) of the fourth reflecting surface P6 of the second deflecting member 80 with respect to the center plane CL (or the second optical axis BX2) passes through the projection area in the circumferential direction of the outer peripheral surface of the substrate supporting cylinder 25. When the angle between the chief ray of the projection beam EL2 at the center point of the PA and the center plane CL in the ZX plane is εs°, the relationship is β°=45°+εs°/2.

<Photomask and reticle support cylinder>

Next, the configuration of the cylindrical wheel (mask holding cylinder) 21 and the mask M of the mask holding mechanism 11 in the exposure apparatus U3 of the first embodiment will be described with reference to FIGS. 6 and 7. Fig. 6 is a perspective view showing a schematic configuration of a cylindrical wheel 21 and a mask M formed on an outer peripheral surface thereof. Fig. 7 is a development view showing a schematic configuration of the mask surface P1 when the outer circumferential surface of the cylindrical wheel 21 is flattened.

In the present embodiment, the mask M is a reflective sheet-like mask, and the cylindrical wheel 21 is formed of a metal cylindrical substrate and is formed in a circle, regardless of whether it is wound around the outer circumferential surface of the cylindrical wheel 21. Any of the cases where the outer peripheral surface of the cylinder substrate directly forms a reflective mask pattern can be applied. However, for the sake of simplification of the description, the latter case will be described. The mask M formed on the outer peripheral surface (diameter φ) of the cylindrical surface 21 is formed of a pattern forming region A3 and a non-pattern forming region (light shielding tape region) A4 as shown in FIG. 3 as before. The mask M shown in FIGS. 6 and 7 passes through the projection areas PA1 to PA6 of the projection optical systems PL1 to PL6, and corresponds to the pattern formation area A3 of the exposure area A7 projected on the substrate P in FIG. The mask M (the pattern forming region A3) is formed substantially in the entire circumferential direction of the outer circumferential surface of the cylindrical wheel 21, but the width (length) in the direction (Y direction) parallel to the first axis AX1 is set to L. The length La of the outer circumferential surface of the cylindrical wheel 21 parallel to the first axis AX1 (Y direction) is small. Further, in the case of the present embodiment, the mask M is not disposed 360° on the outer circumferential surface of the cylindrical wheel 21, but is provided in the peripheral direction in which the white portion 92 of a predetermined size is interposed. Therefore, both ends of the margin portion 92 in the circumferential direction correspond to the terminal end and the start end in the scanning exposure direction of the mask M (pattern forming region A3).

Further, in Fig. 6, a shaft SF coaxial with the first axis AX1 is provided on both end faces of the cylindrical wheel 21. The shaft SF supports the cylindrical wheel 21 through a bearing provided at a predetermined position in the exposure device U3. The bearing system is a contact type using a metal ball or a needle, or a non-contact type such as a static pressure gas bearing. Further, in the outer circumferential surface of the cylindrical wheel 21 (the mask surface P1), In the Y direction in which the first axis AX1 is parallel, each of the end regions outside the region of the mask M is formed in the circumferential direction to form a code for accurately measuring the rotational angular position of the cylindrical wheel 21 (mask M). Ruler. The scale disc engraved with the encoder scale for measuring the position of the rotation angle may also be fixed coaxially with the shaft SF.

Here, FIG. 7 is a state in which the outer circumferential surface of the cylindrical wheel 21 of FIG. 6 is cut and expanded by the cutting line 94 in the margin portion 92. In the following description, the direction orthogonal to the Y direction in the state in which the outer peripheral surface is developed is referred to as the θ direction. As shown in Fig. 7, the entire circumference of the mask surface P1 is π φ because the diameter is φ and the circumference ratio is π. Further, the length L of the mask M (the pattern forming region A3) in the Y direction parallel to the first axis AX1 with respect to the entire length La of the mask surface P1 in the direction parallel to the first axis AX1 is formed by L≦La. It is formed in the θ direction by the length Lb. The length of the length Lb is subtracted from the entire circumference π φ of the mask surface P1, and is the total size of the θ direction of the margin portion 92. Alignment marks for aligning the position of the mask M are also formed in discrete positions in the Y direction in the margin portion 92.

Here, the mask M shown in FIG. 7 is a mask for forming one corresponding pattern on a display panel used for a liquid crystal display or an organic EL display. In this case, as the pattern formed in the mask M, there are a pattern of TFT electrodes and wirings for forming respective pixels on the display screen of the display panel, a pattern of each pixel on the display screen of the display element, and a color filter of the display element and Black matrix pattern, etc. As shown in FIG. 7, the mask M (pattern forming area A3) is provided with a display screen area DPA that forms a pattern corresponding to the display screen of the display panel, and is disposed around the display screen area DPA to form a display screen. A peripheral circuit area TAB of a pattern such as a circuit.

The size of the display screen area DPA on the mask M corresponds to the display to be manufactured. The size of the display portion of the panel (the size of the diagonal length Le), when the projection magnification of the projection optical system PL shown in Figs. 2 and 4 is equal to (x1), the display screen area DPA on the mask M The actual inch (the diagonal length Le) is the inch size of the actual display. In the present embodiment, the display screen area DPA is a rectangle having a long side Ld and a short side Lc, but a length ratio (aspect ratio) of the long side Ld and the short side Lc. In a typical example, Ld:Lc=16:9 Or Ld:Lc=2:1. The aspect ratio 16:9 is the aspect ratio of the screen used in the so-called high image size (wide size). In addition, the aspect ratio of 2:1 is called the aspect ratio of the screen of the scope size, and the aspect ratio used for the ultra-high-quality image of the TV screen is 4K2K. For example, in the case of a display panel having an aspect ratio of 16:9 and a screen size of 50 inches (Le=127 cm), the long side Ld of the display screen area DPA on the mask M is about 110.7 cm, and the short side Lc is about 62.3cm. Further, in the case where the same screen size (50 inches) and the aspect ratio is 2:1, the long side Ld of the display screen area DPA is about 113.6 cm, and the short side Lc is about 56.8 cm.

As shown in FIG. 7, when the photomask M (including the display screen area DPA and the peripheral circuit area TAB) for one display panel is formed on the outer peripheral surface of the cylindrical wheel 21, it is arranged to display the long side of the screen area DPA. The direction of Ld is preferably the θ direction (the circumferential direction of the cylindrical wheel 21). This eliminates the need to make the diameter φ of the cylindrical wheel 21 too small, and it is not necessary to make the length La of the cylindrical wheel 21 in the direction of the first axis AX1 too large. Here, an example of the size (Lb × L) of the mask M including the width dimension of the peripheral circuit region TAB will be described. The width dimension of the peripheral circuit area TAB varies depending on the circuit configuration, and the total width in the Y direction of the peripheral circuit area TAB on both end sides in the Y direction of the display screen area DPA in FIG. 7 is set as the display screen area. 10% of the Y direction length Lc of the DPA, and the total width in the θ direction of the peripheral circuit area TAB on both end sides in the θ direction of the display screen area DPA is set to the θ direction length Ld of the display screen area DPA. 10%.

In this case, if the panel is a 50-inch display panel having an aspect ratio of 16:9, the long side Lb of the mask M is 121.76 cm and the short side L is 68.49 cm. Since the size of the margin portion 92 in the θ direction is 0 or more, the diameter φ of the cylindrical wheel 21 is 38.76 cm or more in terms of φ ≧ Lb / π. Therefore, in order to scan and expose the pattern of the 50-inch display panel having an aspect ratio of 16:9 to the substrate P, the length La of the diameter φ38.76 mm or more and the direction of the mask surface P1 parallel to the first axis AX1 is larger than the short side. A cylindrical wheel 21 of L (68.49 cm) or more. At this time, the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.77. Further, when the width in the θ direction of the peripheral circuit region TAB is 20% of the length Ld in the θ direction of the display screen region DPA, the long side Lb of the mask M is 132.83 cm, and the short side L is 68.49 cm, and the cylinder wheel The diameter φ of 21 is 42.28 cm or more, and the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.62.

Under the same conditions, when the aspect ratio is 2:1 in the 50-inch display panel, the long side Lb of the mask M is 124.96 cm, and the short side L is 62.48 cm. Accordingly, the diameter φ of the cylindrical wheel 21 is 39.78 cm or more in terms of φ ≧ Lb / π. Therefore, in order to scan and expose the pattern of the 50-inch display panel having an aspect ratio of 2:1 to the substrate P, the length La of the diameter φ39.78 cm or more and the direction in which the mask surface P1 is parallel to the first axis AX1 is required to be the short side L. (62.48 cm) or more of the cylindrical wheel 21. At this time, the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.57. Further, if the sum of the widths of the peripheral circuit regions TAB in the θ direction is 20% of the length Ld in the θ direction of the display screen region DPA, the long side Lb of the mask M is 136.31 cm, and the short side L is 62.48 cm, and the cylinder The diameter φ of the wheel 21 is 43.39 cm or more, and the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.44.

As shown in FIG. 7, when the photomask M in which the pattern for a single display panel is formed is arrange|positioned on the outer peripheral surface of the cylindrical wheel (mask holding cylinder) 21, Y orthogonal to the scanning exposure direction. The relationship between the length L of the direction mask M and the diameter φ of the mask surface P1 falls within the range of 1.3 ≦L/φ ≦3.8. However, when the arrangement of the mask M shown in FIG. 7 is rotated by 90° in FIG. 7, and the long side Lb of the mask M is in the Y direction and the short side L is in the θ direction, the above relationship is deviated. For example, in the case of a 50-inch display panel having a 16:9 aspect ratio, if the width in the θ direction of the peripheral circuit region TAB is set to 10% of the length Ld of the display screen region DPA, the length of the mask M is long. The side Lb is 121.76 cm and the short side L is 68.49 cm. Therefore, the minimum length L of the direction in which the mask surface P1 is parallel to the first axis AX1 is Lb (121.76 cm), and the diameter φ of the cylindrical wheel 21 depends on φ≧. The calculation of L/π is 21.80 cm or more. Therefore, the ratio Lb/φ of the diameter φ to the length Lb of the mask M in the direction parallel to the first axis AX1 is about 5.59. Similarly, in the case of a 50-inch aspect ratio display panel of 2:1, since the long side Lb of the mask M is 124.96 cm and the short side L is 62.48 cm, the mask surface P1 is parallel to the first axis AX1. The minimum value Lb of the length L of the direction is (124.96 cm), and the diameter φ of the cylindrical wheel 21 is 19.89 cm or more in terms of φ ≧ L / π. Therefore, the ratio Lb/φ of the diameter φ to the length Lb of the mask M in the direction parallel to the first axis AX1 is about 6.28.

As described above, even if the size (Lb × L) of the mask M is the same, the value of the ratio L/φ (or Lb/φ) largely changes due to the direction of the long side and the short side. The ratio L/φ (or Lb/φ) is large, which means that the diameter φ of the cylindrical wheel 21 is small and the curvature of the mask surface P1 is sharp. Therefore, in order to maintain the faithfulness of the pattern transfer, the illumination area IR shown in Fig. 3 is bound to be obtained. Or the width of the scanning exposure direction Xs of the projection area PA is made narrower. Alternatively, the length of the cylindrical wheel 21 in the direction parallel to the first axis AX1 needs to be doubled to further increase the number of the plurality of projection optical systems PL (illumination optical systems IL) arranged in the Y direction. On the other hand, the ratio L/φ (or Lb/φ) is small, and in one case, the length of the mask M on the cylindrical wheel 21 in the direction parallel to the first axis AX1 is small, for example. For example, only one of the six projection areas PA1 to PA6 in FIG. 3 is used, and in the other case, the diameter φ of the cylindrical wheel 21 is too large, resulting in the θ direction dimension of the margin portion 92 shown in FIGS. 6 and 7. More than necessary. For the above reasons, by forming the relationship between the dimensions of the cylindrical wheel (photomask holding cylinder) 21 and the relationship of 1.3 ≦L/φ ≦ 3.8, it is possible to efficiently use the reticle M in which the pattern for the display panel is formed. Precision exposure work to improve productivity.

In the example shown in FIG. 6 and FIG. 7, the outer surface (the mask surface P1) of the cylindrical wheel (the mask holding cylinder) 21 is supported by the mask M having the pattern for one surface display panel, but there are also examples. A case where a pattern for a plurality of surface display panels is formed on the mask surface P1. Next, a number of such examples are named in FIGS. 8 to 10.

FIG. 8 is a developed view showing a schematic configuration in which three masks M1 of the same size are arranged on the mask surface P1 in the circumferential direction (θ direction) of the cylindrical wheel 21. FIG. 9 is a developed view showing a schematic configuration in which four masks M2 of the same size are arranged on the mask surface P1 in the circumferential direction (theta direction) of the cylindrical wheel 21. Fig. 10 shows that the mask M2 shown in Fig. 9 is rotated by 90°, two masks M2 are arranged on the mask surface P1 in the Y direction, and are placed in the circumferential direction of the cylinder wheel 21 (theta direction). An expanded view of the schematic structure when two groups are arranged. 8 to 10, by rotating one of the cylindrical wheels 21, exposing a plurality of (here, three or four) display panels of the same size on the substrate P, so it is called taking Multi-faceted mask M. In addition, as shown in FIG. 8, the entire area of the mask surface P1 to be scanned and exposed on the substrate P by the projection optical system PL is set as a mask M in the mask M, and is used as a display panel in the mask M. The mask M1 (M2 in FIGS. 9 and 10) is arranged in the scanning exposure direction (θ direction) with a predetermined interval Sx. In the respective masks M1 (M2 in FIGS. 9 and 10), similarly to FIG. 7, the display screen area DPA having the diagonal length Le and the peripheral circuit area TAB surrounding the same are included.

The details of the example shown in Fig. 8 are as follows. In Fig. 8, the largest rectangle is the outer peripheral mask surface P1 of the cylindrical wheel 21. When the cut line 94 is the origin of the θ direction, the mask surface P1 has a length π φ in the θ direction from the rotation angle of 0° to 360°, and a length La in the Y direction parallel to the first axis AX1. The area indicated by a broken line on the inner side of the mask surface P1 corresponds to the mask M to be exposed to the entire area (the exposure area A7 in Fig. 3) on the substrate P. The three masks M1 arranged in the θ direction in the mask M are arranged such that the longitudinal direction of the display screen region DPA is the Y direction and the short side direction is the θ direction. Further, each of the masks M1 is disposed at an interval Sx adjacent to the θ direction, and an alignment mark (a mask) for arranging the position of the mask M (or M1) on the specific cylindrical wheel 21 is discretely disposed at three places in the Y direction. Mark) 96. These mask marks 96 are detected by a mask alignment optical system (not shown) that is disposed on the outer peripheral surface (mask surface P1) at a predetermined position in the circumferential direction of the cylindrical wheel 21. The exposure device U3 measures the position of the entire cylinder wheel 21 or the position of each of the masks M1 in the rotation direction (theta direction) and the Y direction based on the positions of the mask marks 96 detected by the mask alignment optical system. Position offset.

In general, when a component of the display panel is formed on the substrate P, a plurality of layers are laminated. Therefore, the exposure device will align the pattern of the mask M (or M1) at a specific position on the substrate P. The mark (substrate mark) is transferred onto the substrate P together with the mask M (or M1). In Fig. 8, such a substrate mark 96a is formed at three end portions of the respective masks M1 in the Y direction and separated at three positions in the θ direction. The region on the photomask (or substrate P) occupied by the substrate mark 96a has a width in the Y direction of about several mm. Therefore, the Y-direction length L of the mask M to be exposed on the mask surface P1 on the substrate P is the Y-direction dimension of each mask M1 and the substrate mark 96a secured on both sides of the mask M1 in the Y direction. The total of the Y-direction dimensions of the area.

Moreover, if the entire mask M on the mask surface P1 has a length Lb in the θ direction, When the total length of the θ direction dimension of each mask M1 and the Y direction dimension of each interval Sx is Px, Lb = 3Px. As shown in FIG. 7 above, when the mask M corresponding to a single display panel is disposed, although the white portion 92 is provided with a predetermined length, as shown in FIG. 8, a plurality of masks M1 are disposed at intervals θ in the θ direction. At this time, the length of the θ direction of the margin portion 92 can be made zero. That is, the length of the θ direction of each mask M1 depends on the size of the display panel, and the minimum size required for the interval Sx is also predetermined. Therefore, the diameter φ of the cylinder wheel 21 is set to satisfy φ=3Px/π. The relationship can be. Conversely, if the range of the diameter φ of the cylindrical wheel 21 that can be attached to the exposure device U3 is roughly determined, the adjustment can be made by changing (increase) the size of the interval Sx.

Next, a specific example of the size of the mask M of Fig. 8 will be described. In Fig. 8, the diagonal length Le of the display screen area DPA of the mask M1 is 32 inches (81.28 cm), and the dimensions of the Y direction and the θ direction of the peripheral circuit area TA1 are 10% of the size of the display screen area DPA. The Y-direction dimension of the region where the substrate mark 96a is formed is set to 0.5 cm (total 1 cm on both sides). If the display panel has an aspect ratio of 16:9, the short side dimension of the mask M1 is 48.83 cm and the long side dimension is 77.93 cm. If the display panel has a length to width ratio of 2:1, the short side dimension of the mask M1 is 43.83cm, long side size is 79.97cm. When the size of the white portion 92 is zero and the three masks M1 and the three intervals Sx are arranged in the θ direction so as to satisfy Lb=π φ=3Px, if the length of the reticle M1 in the θ direction is Lg, the interval is Sx can be obtained by Sx=(Lb-3Lg)/3.

Therefore, any one of the display panel mask M1 having an aspect ratio of 16:9 and the display panel mask M1 having an aspect ratio of 2:1 can be disposed in the light of the cylinder wheel 21 of the same diameter. In the case of the cover P1, the diameter φ of the cylindrical wheel 21 may be set to about 43 cm. In this case, the display panel having an aspect ratio of 16:9 is such that the interval Sx between the masks M1 is set to 1.196 cm, and the display panel having an aspect ratio of 2:1 sets the interval Sx between the masks M1 to 5.045 cm.

Since the Y-direction length L of the mask M on the mask surface P1 is the sum of the Y-direction dimension of the mask M1 and the Y-direction dimension (1 cm) of the formation region of the substrate mark 96a, the display panel having an aspect ratio of 16:9 The mask M for a display panel having a mask M of L = 78.93 cm and an aspect ratio of 2:1 is L = 80.97 cm. Therefore, the ratio of the diameter φ (43 cm) of the cylindrical wheel 21 to the length L of the mask M in the Y direction is L/φ=1.84, and the length and width of the cylindrical wheel 21 for the display panel having an aspect ratio of 16:9. The cylindrical wheel 21 for a display panel of 2:1 has L/φ=1.88. In either case, the ratio L/φ falls within the range of 1.3 to 3.8.

Further, when the pattern of the display panel having an aspect ratio of 16:9 is exposed on the substrate P and the pattern of the display panel having an aspect ratio of 2:1 is exposed on the substrate P, the substrate P is required to be exposed. When the dimension of the θ direction of the interval Sx is controlled to the required minimum limit, it is naturally necessary to change the diameter φ of the cylindrical wheel 21. For example, when the interval Sx is 2 cm, the diameter φ of the cylindrical wheel 21 of the mask M1 for a display panel having an aspect ratio of 16:9 is formed, and φ ≧ 43.77 cm according to the relationship of π φ = 3 (Lg + Sx). . On the other hand, the diameter φ of the cylindrical wheel 21 of the mask M1 for a display panel having an aspect ratio of 2:1 is φ ≧ 40.1 cm. In this case, the cylinder wheel 21 for the display panel having an aspect ratio of 16:9 has a ratio L/φ=1.80, and the cylinder wheel 21 for the display panel having an aspect ratio of 2:1, the ratio L/φ=2.02, It falls within the range of 1.3~3.8.

Further, in order to change the diameter φ of the cylindrical wheel 21 (mask M) attached to the exposure apparatus U3, the exposure apparatus U3 is provided with the Z-direction of the first axis AX1 of the cylindrical wheel 21, which is biased. A mechanism that shifts the difference of the diameter φ by a factor of 1/2. In the above example, the difference φ of the diameter φ is 3.67 cm, and the first axis AX1 (axis SF) of the cylindrical wheel 21 is supported by about 1.835 cm in the Z direction. Further, when the displacement of the first axis AX1 of the cylindrical wheel 21 in the Z direction is large, the cylindrical lens 54 shown in Fig. 4 must be changed to have a convex cylinder satisfying the illumination condition as shown in Fig. 5. When the curvature of the surface is adjusted, the angle α of the first reflecting surface (planar mirror) P3 of the first deflecting member 70 is adjusted so that the polarizing beam splitter PBS and the quarter-wavelength plate 41 as a whole are slightly inclined in the XZ plane.

As described above, in FIG. 8, the mask M (including the three masks M1) formed in the cylindrical drum 21 is transferred to the display panel pattern (mask M1) on the substrate P in the θ direction. (Scanning exposure direction) A plurality of substrate marks 96a are provided. Therefore, when the plurality of substrate marks 96a and the display panel pattern (mask M1) are sequentially transferred onto the substrate P by the exposure device U3, various problems at the time of exposure can be confirmed. For example, the substrate mark 96a transferred onto the substrate P can be used to specify the position of the defect (for example, the adhesion of the foreign matter) generated on the substrate P, or the patterning error of the photomask, the focus error, the overlap error during the overlap exposure, and the like. Various offset errors. The measured offset error is added to the management of the entire reticle, and the position management of each reticle M1 on the cylindrical reticle 21 and the pattern of each display panel transferred onto the substrate P (mask M1) ) Location management (correction).

9 is a view showing a mask M2 for a display panel having an aspect ratio of 2:1, in which the Y direction is a long side of the display screen area DPA, and four masks disposed in the cylinder wheel 21 are arranged in the θ direction. Example on face P1. A space Sx is provided on the side (long side) of the reticle M2 in the θ direction, and the reticle mark 96 and the substrate mark 96a are also provided in the same manner as in the previous FIG. In this case, the total length π φ (= Lb) of the circumferential direction (θ direction) of the mask surface P1 is π φ = 4 Px = 4 (Lg + Sx). Here, the screen size of the display screen area DPA is 24 inches (Le = 60.96 cm), and the total width of the θ direction of the peripheral circuit area TAB is 10% of the length of the display screen area DPA in the θ direction, and Y of the peripheral circuit area TAB. The total width of the direction is 20% of the length of the display screen area DPA in the Y direction, and the total width of the Y-directions of the formation regions of the substrate marks 96a disposed at both end portions of the mask M2 in the Y direction is 1 cm.

In this case, since the size of the display screen area DPA is 54.52 cm on the long side and 27.26 cm on the short side, the full length L in the Y direction of the exposure mask M on the mask surface P1 includes the mask M2 and the substrate mark 96a. The formation area is L = 66.43 cm. Further, the length Lg of the mask M2 on the mask surface P1 is 29.99 cm. Therefore, if the interval Sx is 1 cm, the diameter φ of the mask M (cylinder wheel 21) is π φ ≧ 4Px. It is 39.46cm or more. Therefore, as shown in FIG. 9, when the four faces of the mask M2 for the display panel having an aspect ratio of 2:1 are placed on the cylindrical wheel 21, the ratio L/φ is 1.67, which is in the range of 1.3 to 3.8. Inside.

FIG. 10 shows an example in which the mask M2 shown in FIG. 9 is rotated by 90° and the long sides are arranged in the θ direction, and two of the two in the θ direction and two in the Y direction are arranged on the mask surface P1. Here, it is provided between the two masks M arranged in the Y direction, and the formation region of the substrate mark 96a is provided. Therefore, when the Y-direction total width of the formation region of the substrate mark 96a is 2 cm, the Y-direction full length (short side) L of the mask M formed on the mask surface P1 is 61.98 cm, and the θ direction of the mask M is θ. The full length (long side) π φ is 132.86 cm, and the diameter φ of the mask M (cylindrical mask 21) is 42.29 cm or more, and the ratio L/φ is 1.47.

When the four masks M2 are arranged as shown in FIG. 9 or FIG. 10, when the interval Sx is adjusted, the diameter φ of the cylindrical wheel 21 and the dimension La of the Y-direction of the mask surface P1 can be made constant. In the case of Fig. 9 and Fig. 10, the length L of the mask M in the Y direction is larger than the case of Fig. 9 is L = 66.43 cm, and the diameter φ of the cylinder wheel 21 (mask M) is larger as shown in Fig. 10. In the case of φ ≧ 42.29 cm. Therefore, if the cylindrical wheel 21 having the outer peripheral surface (the mask surface P1) in the Y direction and having the dimension La of La ≧ 66.43 cm and the diameter φ of φ ≧ 42.3 cm is used, the mask can be disposed regardless of any of the configurations of FIG. 9 and FIG. M2 can take 4 sides. In this case, the ratio L/φ is also 1.57, which is in the range of 1.3 to 3.8.

As shown in FIG. 8 to FIG. 10, it is possible to match the mask surface P1 with various configuration rules. A mask pattern (mask M, M1, M2) for the display element is placed. On the other hand, the length L of the direction (Y direction) orthogonal to the scanning exposure direction (θ direction) of the mask surface P1 (outer peripheral surface) of the cylindrical wheel (mask holding cylinder) 21 is made to the cylinder wheel 21 The relationship of the diameter φ satisfies the relationship of 1.3≦L/φ≦3.8, that is, as shown in FIGS. 8 to 10, even when a plurality of mask patterns (masks M1 and M2) of display panels of various sizes are arranged. It is also possible to arrange the mask pattern in a state where the gap (interval Sx) is reduced.

Further, by making the cylindrical wheel 21 satisfy the relationship of 1.3 ≦L/φ ≦ 3.8, it is possible to suppress the increase in size of the apparatus while suppressing the increase in the number of the illumination optical system IL and the projection optical system PL. That is, the cylindrical wheel 21 is elongated, and the number of the illumination optical system IL and the projection optical system PL can be suppressed from increasing. Further, since the diameter φ of the cylindrical wheel 21 is increased, it is possible to suppress the size of the device in the Z direction from increasing.

Here, as shown in FIG. 7, when the one-surface mask M for the display panel having an aspect ratio of 2:1 is formed on the outer peripheral surface (the mask surface P1) of the cylindrical wheel 21, a FIG. 6 is assumed. In the case where the θ direction dimension of the margin portion 92 in FIG. 7 is zero, and the Y direction (the first axis AX1 direction) of the mask surface P1 is La=L. Further, as described above, the peripheral circuit area TAB disposed around the screen display area DPA may be about 20% of the screen display area DPA. However, the size ratio of the peripheral circuit area TAB changes depending on which part of the screen display area DPA is disposed as the terminal portion of the circuit due to the actual pattern specification and design. Therefore, although it is not possible to specify the width, the total width of the peripheral circuit area TAB adjacent to the short side of the screen display area DPA is assumed to be the direction in which the aspect ratio of the mask M is increased, and the screen display area DPA is assumed. The long side Ld is 20%. Moreover, the total width of the peripheral circuit area TAB adjacent to the long side of the screen display area DPA is assumed to be the screen display area. The short side Lc of DPA is 0~10%. Under the assumption that the screen display area DPA is a 50-inch display panel having an aspect ratio of 2:1, the long side Ld of the screen display area DPA is 113.59 cm and the short side Lc is 56.8 cm. Therefore, the length Lb (= π φ) of the reticle M in Fig. 7 is 136.31 cm, the diameter φ of the cylindrical wheel 21 (mask M) is 43.39 cm, and the length L (=La) of the y-direction is 56.8~ 62.48cm, the ratio of the length L to the diameter φ L / φ is 1.30 ~ 1.44. As described above, when the entire reticle for the display panel having a large aspect ratio is formed on one surface on the outer peripheral surface (the reticle surface P1) of the cylindrical wheel 21, the ratio L/φ becomes the minimum value. 1.3. Further, in the case where the aspect ratio of the screen display area DPA is 2:1, the mask M is only 20% larger than the width of the peripheral circuit area TAB in the longitudinal direction, and the single-sided mask M is as shown in FIG. The aspect ratio (Lb/L) is 2.4, and according to Lb = π φ, the lead ratio is L/φ = π / 2.4 ≒ 1.30.

Further, as in the case of a printing machine, when the mask M in Fig. 7 is rotated by 90° and disposed on substantially the entire surface of the mask surface P1 of the cylindrical wheel 21, as described earlier, the ratio L/φ becomes excessive. In the case where the aspect ratio of the screen display area DPA is 2:1, the mask M of one side is only 20% larger than the width of the peripheral circuit area TAB in the longitudinal direction, and the margin portion 92 is When the dimension in the θ direction is zero, L/Lb (π φ) = 2.4/1, and the ratio L/φ is 7.54. In this case, when the photomask M having one surface for the 50-inch display panel exemplified above is used, the length L in the Y direction is 136.31 cm, and the length Lb (π φ) in the θ direction is 56.8 cm, and the cylinder wheel The diameter φ of 21 (mask M) is 18.1 cm. As described above, when the longitudinal direction of the mask M is set to the θ direction and the Y direction is set, the ratio L/φ greatly changes.

In the projection optical system PL of the exposure device U3, when the diameter φ of the cylindrical wheel 21 largely changes, especially when the diameter φ becomes small, the deformation error caused by the projection and the change of the projection surface due to the arc will occur. Larger, so it is not easy to expose a good projection image to the substrate P on. In this case, as shown in FIG. 11, it is preferable that the two masks M2 in which the longitudinal direction of the display panel having the aspect ratio 2:1 of the screen display area DPA is set to the Y direction are arranged in the θ direction.

In FIG. 11, each of the two masks M2 includes a screen display area DPA having an aspect ratio of 2:1 and a peripheral circuit area TAB disposed on both sides of the screen display area DPA in the Y direction. The total width of the peripheral circuit area TAB in the Y direction is set to 20% of the long side dimension Ld of the screen display area DPA, and the interval Sx is provided to the right of the mask M2. When it is assumed that the substrate mark 96a and the mask mark 96 are not disposed around the mask M2, the Y-direction dimension L of the entire mask M including the two masks M2 and the interval Sx (the mask surface P1) is L=1.2. The Ld and θ direction dimensions π φ(Lb) are π φ=2 (Lc+Sx). When the aspect ratio Asp of the screen display area DPA is set to Asp=Ld/Lc, the ratio L/φ is displayed as follows.

L/φ=0.6. π. Asp. Lc/(Lc+Sx)

Here, if the interval Sx is zero, the ratio L/φ becomes L/φ=0.6. π. Asp, when two display panel masks M2 having an aspect ratio of 2:1 are arranged in the direction of FIG. 11, the diameter φ of the cylindrical wheel 21 (mask surface P1) and the length L of the first axis AX1 direction (= The ratio L/φ of La) is 3.77 (about 3.8). In this case, if the screen display area DPA (2:1) is 50 inches, the diameter φ is 36.16 cm and the length L (La) is 136.31 cm. Similarly, when the mask M2 shown in FIG. 11 is used as a display panel having an aspect ratio of 16:9, if the interval Sx is zero, L/φ=0.6. π. Asp relationship, the ratio L/φ becomes 3.35. In this case, if the screen display area DPA (16:9) is 50 inches, the diameter φ is 39.64 cm, and the length L (La) is 132.83 cm.

As described above, in the direction of the short side of the screen display area DPA toward the circumferential direction (θ direction) of the cylindrical wheel 21 and the longitudinal direction toward the first axis AX1 of the cylindrical wheel 21 (Y) When the mask M is disposed in the direction of the direction, two or more identical masks M2 can be arranged in the θ direction, so that the ratio L/φ is 3.8 or less. In addition, when the mask M2 shown in FIG. 11 is arranged in the θ direction by the same conditions, the relational expression of the previous ratio L/φ is displayed, and the following expression is obtained.

L/φ=1.2. π. Asp. Lc/n(Lc+Sx)

According to this relational expression, the arrangement of the mask M2 for display panel to be manufactured on the cylindrical wheel 21, the required interval Sx, and the like can be set to satisfy 1.3 ≦L/φ ≦ 3.8.

Further, the mask surface P1 can be arranged in a ratio by arranging the masks M1 and M2 of the mask member pattern as shown in FIG. 8 or four as shown in FIG. L/φ is less than 3.8. In this case, what is the value of the ratio L/φ, and the relational expression when the masks M1 and M2 having the long sides in the Y direction are arranged in the θ direction can be obtained. Since the vertical and horizontal dimensions of the masks M1 and M2 also vary depending on the width of the peripheral circuit area TAB around the display screen area DPA, both sides (or one side) of the long side direction of the display screen area DPA will be used. The magnification of the long-side dimension of the masks M1 and M2 enlarged by the peripheral circuit area TAB is e1, and the mask is enlarged by the peripheral circuit area TAB on both sides (or one side) of the short-side direction of the display screen area DPA. The magnification of the short side direction dimension of M1 and M2 is set to e2.

Therefore, when the dimension Y in the Y direction of the mask surface P1 is aligned with the dimension in the longitudinal direction of the masks M1 and M2, the length L of the mask region on the mask surface P1 in the Y direction becomes L=La= E1. Ld. Similarly, the θ direction length π φ (Lb) of the mask region on the mask surface P1 becomes π φ = n (e2. Lc + Sx), and the ratio L / φ is expressed by the following relational expression.

L/φ=e1. π. Asp. Lc/n(e2.Lc+Sx)

In the relational expression, when the mask M2 shown in Fig. 11 is used, n = 2, e1 = 1.2, and e2 = 1.0.

For example, when the aspect ratio of the display panel area DPA of the panel element mask M2 is set to 16:9 (Asp=1.778), the mask M2 is arranged side by side in the θ direction (n=3). When the interval Sx is zero, the ratio L/φ becomes L/φ=e1. π. Asp/n. In e2, even if the magnification e1 is set to 1.2 and the magnification e2 is set to 1.0, the ratio L/φ is also 2.23.

Further, as shown in FIG. 10, the aspect ratio of the mask region of the entire four sides of the mask M2 (24 inches) is arranged in two rows and two columns, and the longitudinal direction of the display screen region DPA is oriented toward the θ direction. When the aspect ratio of the mask M (50 inches) which is one surface is substantially the same, the size of the terminal portion of the peripheral circuit region TAB can be different or the interval Sx can be different, that is, the same size can be used. The cylindrical wheel 21 is adapted.

As described above, if the aspect ratio of the display screen area DPA of the display panel is approximately 2:1 such as 16:9 and 2:1, the masks M, M1, and M2 for the display panel are efficient. The relationship between the length L of the cylindrical wheel (cylindrical mask) 21 in the direction (Y direction) orthogonal to the scanning exposure direction (Y direction) and the diameter φ is arranged on the outer peripheral surface of the cylindrical wheel 21, and satisfies 1.3. ≦L/φ≦3.8 is preferred. Further, when the aspect ratio of the single masks M, M1, and M2 is close to 2:1, when the plurality of masks are arranged in a plurality of ways, it is preferable to make the mask region on the mask surface P1 occupied by the plurality of faces as a whole. The aspect ratio (L:Lb) is close to 1:1. Further, it is preferable that the interval Sx (or the white portion 92) is fixed.

Further, the relationship between the diameter φ of the outer circumferential surface (the mask surface P1) of the cylindrical wheel 21 and the total length L (La) of the reticle pattern formed on the mask surface P1 in the direction of the first axis AX1 satisfies 1.3 ≦ L / Φ ≦ 3.8 is preferable, and further, if 1.3 ≦ L / φ ≦ 2.6 can be obtained, the above effects can be obtained very well. For example, the direction of the long side of the mask M2 shown in FIG. 11 is the direction of the θ direction. In the case where the mask M2 is rotated by 90° and two of the two surfaces are arranged in the Y direction without spacing, L/φ ≒ 2.6. In this case, the length π φ (Lb) of the θ direction of one mask M2 is π φ=e1. Ld, the total length L of the two masks M2 arranged in the Y direction is L=2. E2. Lc. Therefore, since Asp=Ld/Lc, the ratio L/φ becomes L/φ=2π. E2/e1. Asp, if e1=1.2, e2=1.0, and Asp=2/1, L/φ=π/1.2≒2.6.

Further, it is preferable that the exposure device U3 can replace the mask M (M1, M2). The mask can be replaced, that is, the display panel of various sizes or the mask pattern for the electronic circuit board can be projected and exposed to the substrate P. Further, even if the surface of the mask (M, M1, M2, etc.) formed on the mask surface P1 of the cylindrical wheel 21 is colored, it is not necessary to make the gap (interval Sx) generated between the masks excessive. That is, it is possible to suppress a decrease in the ratio of the effective area of the mask region to the entire area of the mask surface P1 (the mask utilization ratio).

Further, it is preferable that the mask M can be formed in such a manner that the diameter φ of the mask surface P1 of the cylindrical wheel 21 and the length L of the mask region in the direction orthogonal to the scanning exposure direction (Y direction) are substantially the same. (M1, M2) made replaceable. In this way, it is only necessary to replace the mask M (M1, M2) without adjusting the adjustment of the projection optical system PL on the exposure device U3 side and the illumination optical system IL, or the distance between the substrate P and the mask surface P1, or It can be done with only a small amount of adjustment, and the pattern of various components can be transferred with the same image quality after the mask is replaced.

Further, in the above-described embodiment, the element reticle (M1, M2) in which the number of the surface to be taken and the number of the faces in the arrangement direction are changed to the mask surface P1 is determined by the diameter φ of the cylindrical wheel 21 being constant. Or the case where the elements of various numbers of the diameters φ of the cylindrical wheel 21 are arranged on the mask surface P1. However, in any case, by making the shape of the cylindrical mask P1 satisfy the relationship of 1.3 ≦L/φ ≦ 3.8, a plurality of lights are arranged with a small gap on the mask surface P1. Cover pattern. Thus, the pattern of the element (display panel) can be transferred to the substrate P with good efficiency. Further, by making the cylindrical mask of the cylindrical wheel 21 satisfy the relationship of 1.3 ≦L/φ ≦ 3.8, it is possible to arrange the element patterns of various sizes with good efficiency while reducing the gap between the plurality of element patterns, and Reduce the change in the diameter φ of the cylindrical mask.

Further, as shown in FIGS. 8 to 11, the number of faces of the masks M1 and M2 may be two, three, four or more depending on the size of the display panel (element) to be manufactured. When the number of faces of the masks M1 and M2 is increased to three or four sides, the size of the gap (interval Sx) can be further reduced.

Further, the cylindrical wheel 21 can satisfy the scanning exposure direction (θ direction) width of the illumination region IR or the projection area PA by the relative diameter (diameter φ) by satisfying 1.3 ≦L/φ ≦ 3.8, so-called exposure slit. Width optimization (increase). Hereinafter, the relationship between the diameter φ of the mask face P1 of the cylindrical wheel 21 and the width of the exposure slit in the scanning exposure direction will be described with reference to FIG.

Fig. 12 is a graph in which the relationship between the diameter φ of the cylindrical wheel 21 (mask surface P1) and the exposure slit width D is changed in the case where the amount of defocus is changed. In Fig. 12, the vertical axis represents the exposure slit width D [mm], which is the width of the θ direction (X direction) of the projection area PA (Fig. 3) formed on the substrate P. The vertical axis represents the diameter φ [mm] of the cylindrical wheel 21 (mask surface P1). In addition, the defocus amount is defined by the numerical aperture number NA of the projection optical system PL image side (substrate P side) of the exposure apparatus U3, the wavelength λ of the exposure illumination light, and the process constant k(k≦1). The depth of focus is determined by the DOF. Here, the amount of deviation (defocus amount) between the best focus surface of the projection image and the focal direction of the surface of the substrate P was simulated in two cases of 25 μm and 50 μm.

Here, in the simulation of FIG. 12, the aperture NA of the projection optical system PL is set to 0.0875, the wavelength λ of the illumination light is set to 365 nm of the i-line of the mercury lamp, and the process constant k is set to 0.5. Therefore, according to the focus Depth DOF=k. λ/NA ² gives a width of about 50 μm (about -25 μm to +25 μm). Further, the resolution under these conditions was 2.5 μmL/s. The 25 μm defocusing shown by the broken line in Fig. 12 refers to a state in which a focus deviation of 1/2 of the depth of focus DOF is generated in the exposure slit width D, and when the solid line indicates 50 μm defocus, it means A state in which the focus deviation of the degree of focus depth DOF is generated within the exposure slit width D. That is, the pattern at the time of defocusing of 25 μm indicated by a broken line shows that 1/2 (width: 25 μm) of the width of the depth of focus DOF is allowed as an error caused by the bending of the mask surface P1 of the cylindrical wheel 21. The relationship between the diameter φ and the exposure slit width D, and the pattern at the time of defocusing of 50 μm indicated by the solid line shows the extent of the depth of the depth of focus DOF as the curvature of the mask surface P1 of the cylindrical wheel 21 The resulting error is the relationship between the diameter φ and the exposure slit width D.

In Fig. 12, the defocus amount (set to ΔZ) which is allowed when the diameter φ of the cylindrical wheel 21 is changed in the range of 100 mm to 1000 mm, and the exposure slit width D of 25 μm and 50 μm are obtained by calculation of the following formula. The exposure slit is wide D.

D=2. [(φ/2) ² -(φ/2-△Z) ² ] ^0.5

According to this simulation, for example, when the diameter φ is 500 mm, the defocus amount ΔZ is allowed to be 25 μm, the maximum value of the exposure slit width D is about 7.1 mm, and the defocus amount ΔZ is allowed to be 50 μm. The maximum width D is approximately 10.0 mm.

As shown in FIG. 12, the larger the diameter φ of the cylindrical wheel 21, the larger the exposure slit width D which satisfies the allowable defocus amount. When the aspect ratio of the display screen area DPA is 2:1, and only the mask area M2 of the peripheral circuit area TAB is set as shown in FIG. 11 in the longitudinal direction of the display screen area DPA, if the margin portion 92 is not provided ( When the first surface of the mask M2 is formed on the entire circumference of the mask surface P1 of the cylindrical wheel 21 at intervals Sx), the longitudinal direction of the mask M2 is regarded as a cylinder wheel. In the circumferential direction of 21 (theta direction) or the direction of the first axis AX1 (the Y direction), the ratio L/φ greatly changes. When the longitudinal direction of the mask M2 is set to the Y direction as shown in FIG. 11, the length Lc (short side) of the one surface of the mask M2 in the θ direction is equal to the entire circumference π φ of the outer peripheral surface of the cylindrical wheel 21. , becomes φ=Lc/π. At this time, the length L of the first axis AX1 direction (Y direction) of the mask M2 on the cylindrical wheel 21 is the same as that of the case of FIG. 11 and is L=1.2. Ld. Since the aspect ratio is 2:1 and Ld=2Lc, the ratio L/φ is L/φ=2.4. π≒7.5. On the other hand, when the short side direction of the mask M2 is set to the Y direction, the entire circumference π φ of the one surface of the mask M2 is 1.2. Ld, the direction length L of the mask M2 on the cylindrical wheel 21 becomes Lc. Therefore, the ratio L/φ at this time becomes L/φ=π/2.4≒1.3.

When the Y-direction length L of the mask is set in the Y-direction total size range of each of the projection areas PA1 to PA6 (FIG. 3) of the projection optical system PL of the exposure apparatus U3, and the length L is constant, the ratio L/φ A change of about 6 times from 1.3 to 7.5 represents a change of about 6 times the diameter φ of the cylindrical wheel 21. The diameter φ is changed by about 6 times, and in Fig. 12, it corresponds to, for example, the diameter φ = from 150 mm to 900 mm. In this case, the exposure slit width D when the defocus amount ΔZ is set to 25 μm is changed, that is, from about 3.9 mm at φ150 mm to about 9.5 mm at φ900 mm. Therefore, in the case of fixing the length L of the reticle in the Y direction, when the cylindrical reticle having a diameter of φ900 mm is changed to the cylindrical reticle having a diameter of φ150 mm, the width S of the exposure slit is reduced to about 40%. The same applies to the case where the allowable defocus amount ΔZ is set to 50 μm.

Therefore, when the ratio L/φ is from 1.3 to 7.5, when the exposure is performed with a constant contrast of the projection images, the exposure amount given to the substrate P is simply reduced to 40%. In order to make the exposure amount of the substrate P up to a positive value (100%), the moving speed of the substrate P during exposure is performed with respect to the projection area PA in which the exposure slit width D is set to 9.5 mm. It is necessary to move the substrate P at a speed of about 40%. That is, the transport speed of the substrate P itself must be reduced to about 40%, so that the throughput will be reduced to less than half. When exposure using the projection area PA in which the exposure slit width D is set to 3.9 mm is used, in order to avoid lowering the conveyance speed of the substrate P, it is conceivable to increase the luminance of the projection image in the projection area PA, that is, to increase the illumination of the illumination light beam EL1. However, in this case, the illuminance of the illumination light beam EL1 irradiated to the mask surface P1 needs to be increased by about 2.5 times with respect to the illuminance when the exposure slit width D is 9.5 mm.

On the other hand, when the two faces of the mask M2 of Fig. 11 are taken, the ratio L/φ can be reduced to a range (1.3 to 3.8) of about 3.8 (1.2.π) or less. When the length L of the mask in the Y direction is constant, the change in the diameter φ of the cylindrical mask (cylinder wheel 21) is approximately three times, for example, it is only necessary to consider φ=900 mm to 300 mm. According to the simulation of Fig. 12, the exposure slit width D at a case where the diameter φ is 300 mm and the allowable defocus amount ΔZ is 25 μm is about 5.5 mm. Therefore, the transport speed of the substrate P is reduced to only about 60% with respect to the case where the exposure slit width D is about 9.5 mm. As described above, the aspect ratio (L: π φ) of the mask region formed on the mask surface P1 of the cylindrical wheel 21 is limited to a ratio L/φ of about 1.3 to about 3.8, that is, the exposure slit width can be suppressed. The change of D.

Similarly, when the mask M2 of FIG. 11 is arranged in the θ direction without the interval Sx as shown in FIG. 8, L/φ=0.4π. Asp, the diameter φ of the cylindrical wheel 21 may vary, for example, in the range of about 1.8 times from 500 mm to 900 mm. The exposure slit width D at a defocus amount of 25 μm is reduced from about 9.5 mm at a diameter φ of 900 mm to about 7.1 mm, which corresponds to a decrease in productivity to about 75%. However, it is improved compared to the case where the productivity of the previous example is reduced to less than half. Further, when the mask M2 of FIG. 11 is arranged in the θ direction without the interval Sx as shown in FIG. 9, L/φ=0.3π. Asp, the diameter φ of the cylindrical wheel 21 is, for example, possible The range of about 1.3 times from 700 mm to 900 mm varies. The exposure slit width D at a defocus amount of 25 μm is reduced from about 9.5 mm at a diameter φ of 900 mm to about 8.4 mm. This is equivalent to a reduction in productivity to about 88%, but is substantially improved compared to the case where the productivity of the previous example is reduced to less than half, and substantially no loss of exposure can be performed. In addition, if the exposure slit width D is reduced by 75% or 88%, the illumination intensity of the illumination beam EL1 can be easily increased by increasing the illumination intensity of the light source 31 or increasing the number of light sources. Reduced productivity. Further, the size of the mask region is known to be close to a certain value, so that the productivity is constant. That is, the screen size (diagonal length Le) of the visible display image area DPA distinguishes the single side of the mask M, the mask M1 or the mask M2, and the size of the mask area (L×π φ) A certain cylinder wheel 21 (the diameter φ is constant) maintains the productivity at a certain level.

As described above, although the range of the ratio L/φ is set to be about 1.3 to about 3.8, as shown in Fig. 11, it is assumed that the long side direction of the mask M2 for a display panel having an aspect ratio of 2:1 is assumed. The size includes the width of the peripheral circuit area TAB, which is increased by 20% with respect to the longitudinal direction dimension Ld of the display screen area DPA (in the case of 1.2 times). Therefore, when the dimension in the longitudinal direction of the mask is enlarged by e1 times with respect to the longitudinal direction dimension Ld of the display screen region DPA, the ratio L/φ, that is, Asp=Ld/Lc, is expressed by the following range.

π/(e1.Asp)≦L/φ≦e1. π

By using the cylindrical wheel 21 (cylindrical mask) satisfying this condition, the exposure apparatus U3 of the present embodiment can suppress the projection distortion caused by the projection error caused by the cylindrical surface, or At the same time as the change in the projection surface (focus deviation) caused by the arc, a plurality of mask patterns for the display panel (element) are arranged and transferred onto the substrate P while reducing the gap.

The arrangement examples of the masks M, M1, M2 and the like formed on the cylindrical mask (cylinder wheel 21) in the above-described embodiment are summarized as shown in Figs. 13 and 14 . Fig. 13 shows a case where the mask M having the longitudinal direction of the θ direction takes one side as in the previous Fig. 7, and Fig. 14 shows that the Y direction is the long side direction as in the previous Fig. 11. The case where the mask M2 is arranged in two in the θ direction takes two sides. Similarly to FIG. 7, FIG. 13 is a case where the display panel mask M having the diagonal length Le (inch) of the display screen area DPA is arranged with the long side in the θ direction. In this case, when the ratio (Ld/Lc) of the long side dimension Ld and the short side dimension Lc of the display screen area DPA is set to the aspect ratio Asp, the entire mask M including the peripheral circuit area TAB around the display screen area DPA is included. When the outer circumferential surface (the mask surface P1) of the cylindrical wheel 21 is formed without the residual white, the length π φ of the reticle M in the θ direction is π φ=e1. Ld=e1. Asp. Lc, the length L in the Y direction is L=e2. Lc. As described above, e1 represents the long side direction of the mask M with respect to the long side direction of the display screen area DPA by the total width of the peripheral circuit areas TAB attached to both sides in the longitudinal direction of the display screen area DPA or one side. How much magnification is magnified. Similarly, e2 represents the total width (Ta in FIG. 13) of the peripheral circuit area TAB on both sides in the short side direction of the display screen area DPA or the one side, and the short side direction of the mask M is relative to the display screen area DPA. How much magnification is magnified in the short side direction. According to the above description, the minimum required size of the outer circumferential surface (the mask surface P1) of the cylindrical wheel 21 is π φ × L, and the ratio L/φ of the length L of the mask M to the diameter φ at this time is expressed by the following formula. .

L/φ=π. E2/e1. Asp

The aspect ratio (π φ: L) of the mask M is set as large as possible, and the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is set to zero (e2 = 1), and the magnification is set. When e1 is set to 1.2 (20% 増), the ratio L/φ becomes π/1.2. Asp. because Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L/φ is π/2.4≒1.3, and the aspect ratio Asp is 1.778 (16/9), and the ratio L/φ is π/2.134≒1.47. .

In the same manner as in FIG. 11, the two masks M2 in the Y direction of the display screen region DPA are arranged in two directions in the θ direction, and the aspect ratio Asp, magnification e1, e2. The definition is the same as in the case of FIG. The size of one mask M2 including the peripheral circuit area TAB around the display screen area DPA is L × Lg, and the two masks M2 are juxtaposed in the θ direction with the interval Sx therebetween. Therefore, when the entire mask including the two masks M2 and the two spacers Sx is formed on the outer circumferential surface (the mask surface P1) of the cylindrical wheel 21 without the residual white, the entire reticle of the reticle is θ. The direction length π φ is π φ=2 (Lg+Sx), and the length L in the Y direction is L=e1. Ld. Therefore, the ratio L/φ at this time is expressed by the following formula.

L/φ=π. E1. Ld/2 (Lg+Sx)

At this time, when the magnification ratio e1 is 1.2 (20% 増), the width Ta of the peripheral circuit region TAB adjacent to the long side of the display screen region DPA is set to zero (e2 = 1), and the interval Sx is also set to zero. When, by Lg=e2. Lc, Ld=Asp. The relationship of Lc, the ratio L/φ is 0.6π. Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L/φ is about 3.8, and when the aspect ratio Asp is 1.778 (16/9), the ratio L/φ is about 3.4.

As described above, the size (in English) of the display panel (element) disposed on the cylindrical mask surface P1, the aspect ratio Asp of the display screen area DPA, and the width of the peripheral circuit area TAB are determined. According to this, it is possible to easily produce a preferred cylindrical reticle (cylinder wheel 21) having a ratio L/φ suitable for the apparatus of the exposure apparatus U3.

Further, a specific example will be described using FIG. 15 to FIG. 18. First, as shown in FIG. 7 or FIG. 13 above, the mask M of the display screen area DPA is set to the θ direction in the circle. The case where one surface is taken on the mask surface P1 of the drum 21 is used as a reference for comparison. Here, in the specific example, the projection optical system PL of the exposure device U3 is used to project the mask pattern onto the substrate P at equal magnification. Therefore, in the mask surface P1 of the cylindrical wheel 21, a mask pattern having a larger actual size than the actual display panel is formed. Further, the display screen area DPA of the display panel is a 60-inch screen having a high image quality (length to width ratio of 16:9). In this case, the short side dimension Lc of the display screen area DPA is 74.7 cm, the long side dimension Ld is 132.8 cm, and the diagonal length Le is 152.4 cm. Further, the size of the entire mask M including the peripheral circuit region TAB is set to 1.2 (20% 増) in the longitudinal direction of the display screen region DPA, and the magnification e2 in the short-side direction is set to 1.15. (15% 増), and the long-side direction (θ direction) is e1. Ld=159.4cm, and the short side direction (Y direction) is e2. Lc = 85.9 cm. Further, the length of the margin portion 92 shown in Fig. 6 or Fig. 7 in the θ direction is set to 5.0 cm. Since the mask M is provided on the mask surface P1 of the cylindrical wheel 21 under the above-described conditions, the dimension π φ of the mask surface P1 in the θ direction is 164.4 cm. Therefore, the diameter φ of the cylindrical wheel 21 must be 52.33 cm or more, so it is set to, for example, 52.5 cm. Moreover, although the length of the entire mask M of the above-described condition in the Y direction is 85.9 cm, since the mask M is used as a reference, the projection areas PA1 to PA6 of the projection optical systems PL1 to PL6 of the exposure apparatus U3 are used. The exposure region connected in the Y direction is wide in the Y direction, slightly larger than 85.9 cm and 87 cm. At this time, according to the simulation result shown in FIG. 12, when the diameter φ of the cylindrical wheel 21 (cylindrical mask M) is 52.5 cm, the exposure slit width D when the allowable defocus amount is 25 μm. It is 7.4 mm, and the exposure slit width D when the allowable defocus amount is 50 μm is 10.3 mm. Therefore, when scanning exposure of the substrate P is performed using the mask M (cylinder wheel 21) as a reference shown in FIG. 13, various exposure conditions are made based on the exposure slit width D of 7.4 mm or less or 10.3 mm or less. (The moving speed of the substrate P, the illuminance of the illumination light beam EL1, and the like) is optimized. That is, when the allowable defocus amount ΔZ is set to 25 μm or less, the illumination field light in FIG. 4 is adjusted. The opening of the crucible 55 or the opening of the projection field stop 63 in the projection optical system PL is such that the exposure slit width D (the width of the projection area PA in the scanning exposure direction) is a predetermined value of 7.4 mm or less.

Next, the outer circumferential surface (the mask surface P1) of the cylindrical wheel 21 set for the 60-inch display panel mask M shown in Fig. 13 will be described, and the aspect ratio 16:9 (Asp = 16/9) will be described. The 32-inch display panel uses the mask M3. The size of the mask surface P1 of the cylindrical wheel 21 is such that the length L in the Y direction is 85.9 cm and the length in the θ direction is π φ = 164.4 cm, which is the same as the mask M as the reference, in the longitudinal direction of the display screen area DPA. When one (one side) 32-inch display panel mask M3 is arranged in the θ direction, a large margin portion is formed around the mask M3 on the mask surface P1.

In the case of the 32-inch display panel, the display screen area DPA has a long side dimension Ld of 70.8 cm and a short side dimension Lc of 39.9 cm. Further, when the magnification e1 of the peripheral circuit region TAB adjacent to one side or one side in the longitudinal direction of the display screen region DPA is set to about 1.2 (20% 増), the θ direction dimension of the mask M3 is approximately When it is 15 cm, it is 85.8 cm, and when the white portion 92 is further provided in the θ direction of 5 cm, the total length is 90.8 cm. Therefore, the mask M3 is formed only on the photomask surface P1 of the cylinder wheel 21 prepared for the reference mask M by about 55% of the entire circumference (π φ = 164.4 cm). The length L in the Y direction with respect to the mask surface P1 of the cylindrical wheel 21 as the reference is 85.9 cm, and the length in the Y direction of the mask M3 is set to 1.15 in the short side direction of the display screen area DPA ( If it is 15% 増), it is 45.8 cm. Therefore, the mask M3 is formed only on the light-shielding surface P1 of the cylindrical wheel 21 as the reference by about 53% in the Y-direction dimension (L = 85.9 cm). Therefore, when one 32-inch display panel mask M3 is placed on the mask surface P1 of the reference cylinder wheel 21 so that the longitudinal direction of the display screen area DPA is the θ direction, the area occupied by the mask M3 Only about 30% of the total area of the mask surface P1 The rate is not good.

Therefore, in order to efficiently arrange one mask M3 to the cylindrical wheel 21, the diameter φ of the cylindrical wheel 21 is changed so that the total length of the θ direction dimension of the mask M3 and the size of the margin portion 92 is 90.8 cm. In the case of the perimeter, the diameter φ is as low as 28.91 cm. Therefore, as the cylindrical wheel 21 for the mask M3, a diameter φ of 29 cm is prepared. According to the simulation result of Fig. 12, the exposure slit width D at the diameter φ = 29 cm is obtained when the allowable defocus amount ΔZ is 25 μm. When it is about 5.4 mm and the allowable defocus amount ΔZ is 50 μm, it is about 7.6 mm.

When the exposure slit width D (7.4 mm or 10.3 mm) set for the cylindrical wheel 21 as a reference is compared with this, the reference light mask surface P1 (the cylinder wheel 21 having a diameter φ = 52.5 cm) is used. In this case, the exposure slit width D is set to 10.3 mm (the allowable defocus amount is 50 μm), and the moving speed of the substrate P set with the appropriate exposure amount is set to V1. At this time, in the case where the pattern P of the one surface of the 32-inch display panel of the cylindrical wheel 21 of the diameter φ=29 cm is exposed on the substrate P of the same condition, the exposure slit width D is 7.6. Mm (allowable defocus amount: 50 μm), when the illuminance is constant, the moving speed V2 of the substrate P for obtaining a proper exposure amount is V2 = (7.6/10.3) V1, and the substrate processing speed of the production line is substantially reduced by 25%. When the allowable defocus amount ΔZ is 25 μm, the productivity is also lowered to the same extent.

In view of the above, a 32-inch display panel mask M3 having an aspect ratio of 16:9 will be described with reference to FIG. 15 and a two-sided cylindrical mask (cylinder wheel 21) is taken as shown in the previous FIG. Specific examples. In Fig. 15, the display screen area DPA has a long side dimension Ld of 70.8 cm and a short side dimension Lc of 39.9 cm. In addition, the magnification e1 of the longitudinal direction (Y direction) of the mask M3 in the peripheral circuit region TAB is set to 1.2 degrees, and the magnification e2 of the short-side direction (θ direction) is set to about 1.15. The length L of the cover M3 in the Y direction is increased by 15 cm. In the case of 85.8 cm, the length Lg in the θ direction of the mask M3 is increased by about 6 cm to 45.9 cm.

Here, when the dimension Sx (the margin portion 92) adjacent to the long side of the mask M3 is 10 cm in the θ direction, the length of the entire reticle region including the two masks M3 and the two intervals Sx is θ direction. , 110.8 cm due to 2 (Lg + Sx). Therefore, the diameter φ of the cylindrical wheel 21 at this time may be as long as 35.3 cm. Further, the length L of the mask surface P1 on the cylindrical wheel 21 in the Y direction is at least 85.8 cm. This length L (85.8 cm) can be accommodated in the range of the total width in the Y direction (the total length of the Y directions of the projection areas PA1 to PA6) of the exposure region set by the cylindrical wheel 21 as the reference, which is 87 cm. Therefore, the mask M3 shown in Fig. 15 has a cylindrical mask (φ = 35.3 cm, L = 85.8 cm cylindrical wheel 21) and a cylindrical mask as a reference (φ = 52.5 cm, Similarly, the cylindrical wheel 21 of L=85.9 cm can be attached to the exposure device U3 to efficiently expose the pattern of the mask M3 onto the substrate P.

Fig. 16 is a developed view showing a schematic configuration of another example in which the mask M3 of the 32-inch display panel shown in Fig. 15 is taken as two surfaces. Here, it is assumed that the mask M3 having the same size as that of FIG. 15 is arranged in the Y direction without gaps so that the longitudinal direction of the display screen region DPA is the θ direction, and the Y dimension L of the two masks M3. It is 91.8 cm (2 x 45.9 cm). This length L (91.8 cm) cannot be accommodated in the range of the total width in the Y direction (the total length in the Y direction of the projection areas PA1 to PA6) of the exposure region set by the cylindrical wheel 21 as the reference, which is 87 cm. In other words, the mask M3, which is the same as that of FIG. 15, is rotated by 90°, and cannot be placed on the mask surface P1 of the cylindrical wheel 21 as a reference.

Fig. 17 is a developed view showing a schematic configuration of another example in which the mask M3 for a 32-inch display panel shown in Fig. 15 is taken. Here, it is assumed that one mask M3 having the same size as that of FIG. 15 is arranged such that the short side direction of the display screen region DPA is the θ direction, and the θ direction remains. The interval Sx of the white portion 92 is set to 10 cm. The arrangement of the mask M3 is small in the occupation surface of the mask surface P1 which is the standard cylinder wheel 21, and the efficiency is not good. Therefore, when a cylindrical wheel 21 suitable for the size of the mask M3 of one side of Fig. 17 is set, the entire circumference π φ of the cylindrical wheel 21 is θ-direction dimension Lg (45.9 cm) of the mask M3 and The total size (10 cm) of the white portion 92 (Sx) is π φ = 55.9 cm. Since the diameter φ of the cylindrical wheel 21 is 17.8 cm or more, it is regarded as 18 cm. Further, in this case, the length L of the mask M3 in the Y direction is 85.8 cm as in Fig. 15, and therefore the ratio L/φ is about 4.77.

As described above, when the diameter φ (18 cm) smaller than the diameter φ (52.5 cm) of the cylindrical reticle (the cylindrical wheel 21) is made, the light can be efficiently arranged on the mask surface P1. Cover M3, but the productivity will be reduced. According to the simulation of Fig. 12, when the diameter of the mask face P1 is set to 18.0 cm, the exposure slit width D when the allowable defocus amount ΔZ is set to 25 μm is about 4.3 mm, and the allowable defocus amount ΔZ The exposure slit width D at 50 μm is about 6.0 mm. Therefore, the moving speed V2 of the substrate P is lowered as the exposure slit width D is narrowed with respect to the moving speed V1 of the substrate P when the standard cylindrical mask (the cylindrical wheel 21) is used. When the allowable defocus amount ΔZ is set to 25μm, V2=(4.3/7.4)V1, and the allowable defocus amount ΔZ is set to 50μm, V2=(6.0/10.3)V1, which is the case and use as a standard. In the case of a cylindrical reticle, productivity is reduced to about 58%.

Next, a specific example in which the mask M3 having the same size as that of FIG. 15 is arranged in the y direction in the θ direction as shown in FIG. The configuration of the mask M3 of Fig. 18 is the same as that of the previous Fig. 8 in that three faces are taken.

Here, when the θ direction dimension of the margin portion 92 (Sx) and the interval Sx adjacent to the long sides of the three masks M3 are both set to 9 cm, the dimension Lg in the short side direction of the mask M3 is 45.9 cm, so the length of the entire reticle region in the θ direction is 164.7 cm due to 3 (Lg + Sx). In this case, when the length of the entire reticle region in the θ direction coincides with the total circumference π φ of the cylindrical wheel 21, the diameter φ of the cylindrical wheel 21 is 52.43 cm or more. This value is substantially the same as the diameter φ = 52.5 cm of the cylindrical reticle as a standard. Further, the Y-direction dimension L of the mask region is 85.8 cm, and the Y-direction of the exposure regions (projection regions PA1 to PA6) has a total width of 87 cm or less.

As described above, in the case of a 32-inch display panel mask M3 having an aspect ratio of 16:9, three planes are taken as shown in Fig. 18, and only the standard cylinder wheel 21 (φ = 52.5 cm) is required. The size of the margin portion 92 and the interval Sx is adjusted on the mask surface P1, that is, the mask M3 can be efficiently disposed. Therefore, when the mask M3 is taken as three sides as shown in Fig. 18, since the size (φ × L) of the standard cylindrical mask can still be used, the productivity is not lowered. Further, in the case of Fig. 18, the ratio L/φ is about 1.63, which falls within the range of production which is considered to be efficient, and 1.3 ≦L/φ ≦ 3.8.

As shown in FIGS. 15 to 18, a display panel element of any size is formed on the basis of the size of the mask surface P1 of the cylindrical mask (cylinder wheel 21) which can be mounted on the basis of the exposure apparatus U3. By adjusting the directivity and the number of faces, so that the ratio L/φ of the one-side mask or the multi-face arrangement of the cylindrical wheel 21 is in the range of 1.3 to 3.8, that is, without reducing the production efficiency, The transfer of the pattern is performed efficiently.

Further, in FIGS. 15 to 18, the size of the mask surface P1 of the single-display panel element in which the display screen area DPA is 60 inches in aspect ratio 16:9 is used as a reference. However, it is not limited to this. For example, the display screen area DPA may also be a 65 inch screen having a high aspect ratio of 16:9 aspect ratio. In this case, the diagonal length Le of the display screen area DPA arranged as shown in FIG. 13 is 165.1 cm, the short side Lc extending in the Y direction is 80.9 cm, and the long side Ld extending in the θ direction is 143.9 cm. Moreover, the overall size of the mask M including the peripheral circuit area TAB is only relatively large. The size of the display area DPA is large in the longitudinal direction (θ direction), the magnification e1 = 1.2 (the longitudinal direction of the display screen area DPA is increased by 20%), and the magnification in the short side direction (Y direction) is e2 = 1.15. (15% increase in the short side direction of the display screen area DPA). Therefore, the aspect ratio of the mask M in the case of the mask of the 65-inch aspect ratio of the 16:9 aspect ratio display panel is as follows: e1. Asp. The Lc is 172.7 cm, and the dimension in the short side direction is e2 as shown in FIG. Lc is 93.1 cm. When the mask M of one surface is taken, the margin portion 92 is disposed adjacent to the θ direction, and when the dimension (Sx) in the θ direction is 5 cm, the dimension of the mask surface P1 in the θ direction is about 178 cm, and the diameter φ is 56.7. More than cm. Further, since the length of the mask surface P1 in the Y direction is 93.1 cm, the exposure apparatus U3 which can be mounted by the 65-inch diaphragm mask as a reference can be widened in the Y direction of the exposure region ( The total projection optical system PL in which the Y-direction size of the projection area PA is changed is set to, for example, 95.0 cm in total of the projection areas PA1 to PA6. Alternatively, seven projection optical systems of one projection optical system PL are added in the Y direction. The aspect ratio of the 16:9 65-inch display panel takes the ratio L/φ of the cylindrical mask (cylinder wheel 21) for one side, and is L/φ=1.64 (≒93.1/56.7). Further, since the diameter φ of the cylindrical mask is 56.7 cm, according to the simulation result of Fig. 12, the exposure slit width D is about 7.5 mm when the allowable defocus amount ΔZ is set to 25 μm, and the allowable defocus amount is When ΔZ is 50 μm, it is about 10.6 mm.

For this reason, a cylindrical mask (φ=56.7 cm, L=93.1 cm) for one surface of a 65-inch display panel having an aspect ratio of 16:9 will be described with reference to Fig. 19, and three 37-inch display panels will be used. The mask M4 is a specific example in which a plurality of faces are arranged as shown in FIG. In Fig. 19, the long side Ld (Y direction) of the 37-inch display screen area DPA is 81.9 cm, and the short side Lc (θ direction) is 46.1 cm, and the magnification in the long-side direction e1 and the short-side direction are When the magnification e2 is set to 1.15 (15% 増), the long side dimension L (e1.Ld) of the mask M4 is about 94.2 cm, and the short side dimension Lg (e2. Lc) is about 53.0 cm.

Here, when the interval Sx between the mask M4 and the mask M4 is about 6.0 cm, the total size of the three masks M4 and the three intervals Sx on the mask surface P1 in the θ direction is π φ, Since π φ = 3Lg + 3Sx, it is about 177cm and the diameter φ is 56.4cm or more. Further, since the length L of the mask M4 in the Y direction is 94.2 cm, it falls within the full width (95 cm) of the exposure region in the Y direction. Further, in the case of Fig. 19, the seventh projection optical system PL (projection area PA7) is added in the Y direction, and the full width in the Y direction of the exposure region is 95 cm. As can be seen from the above, when taking a mask for a 37-inch display panel as shown in FIG. 19, a cylindrical mask (a cylinder wheel) for taking a mask M for a 65-inch display panel can be used. 21) Objects of the same shape and size. As described above, in the case of the mask M4 shown in FIG. 19, the interval Sx between the three masks M4 can be reduced with respect to the entire area of the mask surface P1 of the cylindrical wheel 21 as the reference for efficiency. Since the cylindrical wheel 21 having the same diameter φ as the reference cylindrical reticle can be used, it is possible to suppress the decrease in productivity due to the decrease in the exposure slit width D.

Further, in the case where the size of the display screen area DPA of the display panel element is 37 inches and the two sides are used for the mask M4, the same arrangement as that of Fig. 15 described above can be used. In this case, when the total size of the two masks M4 and the two intervals Sx in the θ direction is the total circumference π φ of the cylindrical mask and the interval Sx is about 6 cm, π φ ≒ 118.0 cm. Therefore, the diameter φ of the cylindrical mask (cylinder wheel 21) when the two-surface mask M4 is efficiently arranged in the circumferential direction is 37.6 cm or more.

In this case, the ratio L/φ becomes about 2.5 (≒94.2/37.6). Further, in the case of the cylindrical wheel 21 having a diameter of φ = 37.6 cm, according to the simulation of Fig. 12, the exposure slit width D is about 6 mm when the allowable defocus amount ΔZ is 25 μm, and the allowable defocus amount ΔZ is 50μm field The joint is about 8.6mm. Compared with the exposure slit width D (7.5 mm, 10.6 mm) set as the reference for the cylindrical mask having the diameter φ=56.7 cm as the reference, the allowable defocus amount ΔZ is set to 25 μm or 50 μm. In either case, the productivity (moving speed of the substrate P) is about 80%. However, if the illuminance of the illumination light beam EL1 is 20% larger than that of the cylindrical reticle used as a reference, substantial productivity is not caused.

Further, in the exposure apparatus U3 of the present embodiment, the mask pattern of the cylindrical mask (the cylindrical wheel 21) is projected onto the substrate P at a uniform magnification, but the invention is not limited thereto. The exposure device U3 can adjust the configuration of the projection optical system PL, the peripheral speed of the cylindrical mask (the cylindrical wheel 21), the moving speed of the substrate P, and the like, and enlarge the pattern of the mask M at a predetermined magnification and project it onto the substrate P. It is also possible to project on the substrate P after the magnification is reduced.

As described above, in the cylindrical mask which can be attached to the exposure apparatus U3 of the present embodiment, as shown in Figs. 8, 9, 14, 15, 18, and 19, the longitudinal direction of the screen display area DPA is Y. In the case where two or more mask regions (masks M1, M2, M3, and M4) are arranged in a plurality of planes at intervals θ in the θ direction, the cylindrical mask (cylinder wheel 21) is configured as follows.

A reticle pattern (masks M1 to M4) is formed along a cylindrical surface (P1) having a radius (Rm) from the center line (AX1), and is attached to the cylinder of the exposure apparatus so as to be rotatable around the center line In the photomask, n (n≧2) lengthwise ratios Asp including a long side dimension Ld and a short side dimension Lc are formed in the circumferential direction (θ direction) of the cylindrical surface at intervals Sx. The display screen area (DPA) of (=Ld/Lc) and the rectangular mask area (masks M1 to M4) of the display panel adjacent to the peripheral circuit area (TAB) adjacent thereto, the long side of the mask area The direction (Y direction) size L is set to e1 of the long side dimension Ld of the aforementioned display screen area When the magnification (magnification e1≧1) and the short-side direction (θ direction) dimension of the mask region are e2 times (magnification e2≧1) of the short-side dimension Lc of the display screen region, the cylindrical surface is The length of the center line direction (Y direction) is set to be equal to or larger than the aforementioned dimension L (= e1. Ld), and the entire circumference π φ of the cylindrical surface having the diameter of the cylindrical surface φ is set to n (e2. Further, Lc + Sx) is further set such that the diameter φ, the number n, and the interval Sx are set such that the ratio of the dimension L to the diameter φ is in the range of 1.3 ≦ L / φ ≦ 3.8.

[Second Embodiment]

Next, an exposure apparatus U3a according to the second embodiment will be described with reference to Fig. 20 . In the description of the first embodiment, the same components as those in the first embodiment will be described with the same reference numerals as in the first embodiment. Fig. 20 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment. The exposure apparatus U3 of the first embodiment has a configuration in which the substrate P passing through the projection area is held by the cylindrical substrate supporting cylinder 25. However, the exposure apparatus U3a of the second embodiment is one-dimensional in the XY plane. Or the two-dimensionally moving substrate supporting mechanism 12a holds the substrate P in a planar shape. Therefore, the substrate P of the present embodiment may be not only a sheet substrate having a flexible resin (PET or PEN or the like) as a base, but also a sheet-like thin glass substrate.

In the exposure apparatus U3a of the second embodiment, the substrate supporting mechanism 12a includes the substrate stage 102 on which the support surface P2 for holding the substrate P in a planar shape, and the substrate stage 102 in the plane orthogonal to the center surface CL The moving mobile device (not shown) is scanned in the X direction.

Since the support surface P2 of the substrate P of FIG. 20 is a plane substantially parallel to the XY plane (a plane orthogonal to the center plane CL), it is reflected from the mask M and passes through the projection optical module PLM (projection optical systems PL1 to PL6). The chief ray of the projection beam EL2 projected on the substrate P is set The setting is perpendicular to the XY plane.

In the second embodiment, when the projection magnification of the projection optical module PLM is set to equal magnification (×1), the odd number from the mask M is observed in the XZ plane as in the previous FIG. 2 . The circumferential distance CCM from the center point of the illumination area IR1 (and IR3, IR5) to the center point of the even number illumination area IR2 (and IR4, IR6) is an odd number projection on the substrate P along the support surface P2 The X-direction (scanning exposure direction) distance CCP from the center point of the area PA1 (and PA3, PA5) to the center point of the even-numbered second projection area PA2 (and PA4, PA6) is set to be substantially equal.

The exposure device U3a of FIG. 20 is also a moving device (a linear motor for scanning exposure and a micro-motion actuator) that controls the substrate supporting mechanism 12a by the lower control device 16, and a cylindrical wheel 21 that holds the cylindrical mask M. The precision-synchronized drive substrate stage 102 is rotated. Therefore, the X-direction and the Y-direction moving position of the substrate stage 102 are precisely measured by a laser interferometer or a linear encoder for distance measurement, and the rotational position of the cylindrical wheel 21 is also accurately measured by a rotary encoder. Further, the support surface P2 of the substrate stage 102 may be configured by vacuum adsorption or electrostatic adsorption of the substrate P during scanning exposure, or a static gas bearing may be formed between the support surface P2 and the substrate P. The Bernoulli type holder of the support substrate P is in a contact state or a low friction state.

In the case of the Bernoulli type holder, the substrate P may be a flexible sheet substrate, and the substrate P may be moved in the X direction while the substrate P is moved in the X direction (the Y direction). It is not necessary to move the substrate stage 102 (Benoli type holder) in the X and Y directions, and the support surface P2 only needs to cover the area of the projection areas PA1 to PA6, so that the substrate stage 102 can be obtained. miniaturization. Further, in the case of the Bernoulli type holder, if the substrate P is a long sheet substrate, the substrate P can be continuously moved to the long side. Since the scanning exposure is performed while scanning, it is more suitable for the "roll-to-roll" method than the case where the adsorption holder for the additional time such as adsorption/opening of the substrate P is required.

As in the case of the exposure apparatus U3a, when the support surface P2 is substantially parallel to the XY plane and the substrate P is supported in a planar shape, the mask M (M1 to M4) can be held in a cylindrical shape. The shape condition (L/φ) of the cylindrical wheel 21 satisfies the relationship described in the first embodiment, and the mask pattern of the display panel of various sizes can be efficiently arranged on the substrate P and exposed. And can inhibit the decrease in productivity.

[Third embodiment]

Next, an exposure apparatus U3b according to the third embodiment will be described with reference to Fig. 21 . In addition, in order to avoid duplication of description, only the parts different from the first and second embodiments will be described, and the same components as those of the first and second embodiments will be given the same symbols as in the first and second embodiments. Be explained. Fig. 21 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment. The exposure apparatus U3a of the second embodiment is configured to use a reflection type mask in which the light reflected by the mask becomes the projection light beam EL2. However, the exposure apparatus U3b according to the third embodiment uses the light that has passed through the mask to become a projection beam. The composition of the penetrating reticle of EL2.

In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a cylindrical wheel (photomask holding cylinder) 21a that holds the mask MA in a cylindrical shape, a guide roller 93 that supports the mask holding cylinder 21a, and driving light. The driving roller 98 of the cover holding cylinder 21a and the driving portion 99 are provided.

The mask holding cylinder 21a forms a mask surface (P1) in which the illumination region IR on the mask MA is disposed. In the present embodiment, the mask surface is set to a cylindrical surface having a radius Rm (diameter φ = 2Rm) from the center line AX1' extending in the Y direction. The cylindrical surface is, for example, a peripheral surface other than the cylinder, a cylindrical outer surface, or the like. The mask holding cylinder 21a is made of, for example, glass, quartz, or the like. An annular transparent cylinder having a certain thickness has an outer peripheral surface (cylindrical surface) formed as a mask surface.

The mask MA is, for example, a transmissive planar sheet mask formed by patterning a light-shielding layer such as chrome on one side of a short sheet-like ultra-thin glass plate (for example, having a thickness of 100 to 500 μm). The outer peripheral surface of the cover holding cylinder 21a is curved, and is used in a state of being wound around (attached to) the other peripheral surface. The mask MA has a non-pattern forming region that is not patterned, and is attached to the mask holding cylinder 21a in the non-pattern forming region (corresponding to the peripheral white portion 92 or the like). Therefore, in this case, the mask MA can attach and detach the mask holding cylinder 21a. Further, instead of the planar sheet mask being wound around the outer surface of the mask holding cylinder 21a (ring-shaped transparent cylinder) as the mask MA, the outer peripheral surface of the mask holding cylinder 21a formed in the annular transparent cylinder may be used. Directly depicting and forming a mask pattern formed of a light-shielding layer such as chrome is integrated. In this case, the mask holding cylinder 21a also functions as a supporting member (a mask supporting member) of the mask MA.

The guide roller 93 and the drive roller 98 extend in the Y-axis direction parallel to the center line AX1' of the mask holding cylinder 21a. The guide roller 93 and the driving roller 98 are provided so as to be in contact with the vicinity of the Y-direction end portion of the mask holding cylinder 21a, but are not in contact with the pattern forming region of the mask MA held by the mask holding cylinder 21a. The driving roller 98 is connected to the driving portion 99. The driving roller 98 is transmitted to the reticle holding cylinder 21a by the torque supplied from the driving portion 99, whereby the reticle holding cylinder 21a is rotated about the central axis.

The light source device 13a of the present embodiment includes a light source (not shown) and a plurality of illumination optical systems ILa (ILa1 to IRa6) which are the same as those of the first embodiment. One or all of the illumination optical systems ILa1 to ILa6 are disposed inside the mask holding cylinder 21a (the annular transparent cylinder), and the light shield that is held by the inner peripheral surface (the mask surface P1) of the mask holding cylinder 21a is illuminated from the inside. Each illumination area IR1~IR6 on the MA.

Each of the illumination optical systems ILa1 to ILa6 includes a fly-eye lens, a rod integrator, and the like, and each of the illumination regions IR1 to IR6 is illuminated by the illumination light beam EL1 with uniform illumination. Further, the light source may be disposed inside the mask holding cylinder 21a or may be disposed outside the mask holding cylinder 21a. Further, the light source may be provided separately from the exposure device U3b, and guided through a light guiding unit such as an optical fiber or a relay lens.

As described in the present embodiment, when the penetrating cylindrical reticle is used as the reticle, the shape condition (L/φ) of the reticle support cylinder 21a that holds the reticle MA in a cylindrical shape can be satisfied. According to the relationship described in the first embodiment, the mask patterns of the display panels of various sizes are efficiently arranged on the substrate P for exposure, and the decrease in productivity is suppressed.

The exposure apparatuses U3, U3a, and U3b of the first, second, and third embodiments described above are all mask patterns formed on the cylindrical mask surface P1 (the cylindrical wheel 21 and the mask holding cylinder 21a). A method of projecting exposure onto the substrate P through the projection optical module PLM (PL1 to PL6). However, in the case of the penetrating cylindrical reticle (MA) as in the third embodiment, the peripheral surface (the reticle surface P1) of the penetrating cylindrical reticle and the surface of the substrate P to be exposed may be A penetrating cylindrical mask (MA) is placed in close proximity to the substrate P while maintaining a certain gap (tens of μm to several hundreds μm), and the substrate P is rotated while the penetrating cylindrical mask is rotated. A scanning exposure device in which the direction is synchronously moved in proximity.

Further, the exposure apparatuses U3, U3a, and U3b of the first to third embodiments are provided so as to be variable in accordance with the diameter φ of the cylindrical mask (the cylindrical wheel 21 and the mask holding cylinder 21a) that can be attached thereto. A mechanism for adjusting the support position (Z position) of the cylindrical reticle or a mechanism for adjusting the state of the optical elements in the illumination optical system IL and the projection optical system PL. In this case, the diameter φ of the cylindrical reticle to which the exposure device can be mounted has a range from the minimum diameter φ1 to the maximum diameter φ2. therefore, When the size of the display panel to be manufactured is to be made into a cylindrical mask by taking one or more masks (M, M1 to M4), the relationship between 1.3≦L/φ≦3.8 and φ1≦φ≦ are satisfied. In the manner of the relationship of φ2, the cylindrical wheel 21 and the reticle holding cylinder 21a are preferably formed in a shape and size.

<Component Manufacturing Method>

Next, a method of manufacturing a component will be described with reference to Fig. 22 . Fig. 22 is a flow chart showing a method of manufacturing a component of the component manufacturing system.

In the device manufacturing method shown in FIG. 22, for example, the function and performance design of a display panel formed using a self-luminous element such as an organic EL are designed, and a desired circuit pattern and wiring pattern are designed by CAD or the like (step S201). Next, a cylindrical mask of a desired layer amount is produced in accordance with each of various layers of patterns designed by CAD or the like (step S202). At this time, the cylindrical mask is formed such that the relationship between the diameter φ and the length L (La) satisfies 1.3 ≦L/φ ≦ 3.8, and satisfies the condition that the exposure device can be mounted, φ1 ≦ φ ≦ φ2. The supply reel FR1 of the flexible substrate P (resin film, metal foil film, plastic, etc.) on which the substrate of the display panel is wound is prepared (step S203). Further, the roll substrate P prepared in the step S203 may be a surface whose surface is modified as necessary, or a bottom layer (for example, a fine unevenness by an imprint method) may be formed in advance, or a layer of light may be laminated in advance. Inductive functional film or transparent film (insulating material).

Then, a substrate layer constituting the display panel element such as an electrode or a wiring, an insulating film, a TFT (Thin Film Semiconductor), or the like is formed on the substrate P, and a light-emitting layer made of a self-luminous element such as an organic EL is formed on the substrate. (Display pixel portion) (step S204). In the step S204, the exposure apparatus U3, U3a, and U3b described in the respective embodiments are mounted with a predetermined cylindrical mask to expose the photosensitive layer (photoresist layer, photosensitive decane coupling agent) coated on the surface of the substrate P. Exposure process for exposing an image of a reticle pattern (latent image, etc.) on the surface, The substrate P on which the mask pattern is formed by exposure is required to be formed by a wet process in which a metal film pattern (wiring, electrodes, etc.) is formed by electroless plating after development, or as a conductive ink containing silver nanoparticles. Processing of the printing process of the pattern, etc.

Next, the substrate P is cut for each display panel element continuously manufactured on the long substrate P by a roll, or a protective film (environmentally resistant barrier layer) or a color filter film is bonded to the surface of each display panel element, The components are assembled (step S205). Next, an inspection step of whether the display panel element can be normally operated or whether the desired performance and characteristics are satisfied is performed (step S206). Through the above manner, a display panel (flexible display) can be manufactured.

21‧‧‧Cylinder wheel

92‧‧‧ Yubai Department

94‧‧‧ cut line

AX1‧‧‧1st axis

M‧‧‧Photo Mask

P1‧‧‧Material cover

Rm‧‧‧ radius of curvature

SF‧‧‧ axis

Claims (17)

A substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a photomask disposed in an illumination light illumination region onto a projection region of a placement substrate, and includes a mask support member for the edge of the illumination region Supporting the pattern of the reticle so that the predetermined curvature is curved into the first surface of the cylindrical surface; the substrate supporting member supports the substrate along the predetermined second surface in the projection region; and the driving mechanism The reticle supporting member is rotated by moving the pattern of the reticle to a predetermined scanning exposure direction, and the substrate supporting member is moved by moving the substrate in the scanning exposure direction; the reticle supporting member is disposed When the diameter of the first surface is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, 1.3 ≦L/φ ≦ 3.8. The substrate processing apparatus according to claim 1, further comprising: a substrate transfer mechanism having a substrate supply unit that supplies the substrate to the substrate support member; and a substrate collection unit that collects the substrate through the substrate support member The substrate continues from the substrate supply portion to the sheet shape of the substrate recovery portion. The substrate processing apparatus according to claim 1 or 2, wherein the mask supporting member has a cylindrical base material having a first surface of the diameter φ as an outer peripheral surface, and the pattern of the mask is formed in the substrate The outer surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 3, wherein a relationship between a diameter φ of the first surface and a length L of the first surface in a direction orthogonal to the scanning exposure direction is Satisfies L/φ≦2.6. The substrate processing apparatus of claim 4, wherein the reticle support member is replaceably supported by the reticle, and the plurality of reticles having a diameter φ different from the length L by a ratio L/φ can be supported. The substrate processing apparatus according to claim 4, wherein the reticle support member is replaceably supported by the reticle, and the plurality of reticles having a diameter L and a relationship L/φ of the length L are slightly supported. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a pattern position detecting unit that acquires identification information formed on the mask and detects a position of the pattern based on the identification information. The substrate processing apparatus of claim 7, wherein the identification information is an alignment mark formed on the photomask at a position corresponding to the pattern. The substrate processing apparatus according to any one of claims 1 to 8, wherein the reticle is formed with a pattern of elements along a rotation direction of the reticle support member. The substrate processing apparatus according to any one of claims 1 to 8, wherein the reticle is formed with a pattern of a plurality of elements along a rotation direction of the reticle support member. The substrate processing apparatus according to any one of claims 1 to 8, wherein the reticle is formed with a pattern of a plurality of elements along an axial direction of a cylindrical shape of the reticle support member. The substrate processing apparatus of claim 9 or 10, wherein the element comprises a pattern of display elements. The substrate processing apparatus according to any one of claims 8 to 12, further comprising: adjusting each of the element patterns of the photomask to be transferred to the substrate Conditional exposure condition adjustment mechanism. The substrate processing apparatus according to any one of claims 8 to 13, wherein the reticle has a pattern corresponding to each of the plurality of elements and an identification mark corresponding to the element; the projection optical system identifies the identification mark Projected to the substrate. A device manufacturing method comprising: an operation of supplying a substrate to a substrate processing apparatus according to any one of claims 1 to 14; and an operation of forming a pattern of the mask on the substrate using the substrate processing apparatus. A cylindrical reticle having a reticle pattern for an electronic component formed on a peripheral surface of a cylindrical shape, mounted on a predetermined exposure device, and rotatable about a center line, wherein the outer peripheral surface has a direction along the center line a cylindrical base material having a length of La and a diameter of the outer peripheral surface of φ; and a maximum length of the reticle pattern which can be formed on the outer peripheral surface of the cylindrical base material in the center line direction is L, at L≦La In the range, the ratio L/φ of the diameter φ to the length L is set in the range of 1.3 ≦ L / φ ≦ 3.8. A cylindrical reticle is formed with a reticle pattern along a cylindrical surface having a certain radius from a predetermined center line, and is attached to the exposure device so as to be rotatable about the center line, wherein the cylindrical surface includes a long-side dimension Ld, a short-side dimension Lc, an aspect ratio Asp of a display screen area of Ld/Lc, and a rectangular mask area for a display panel adjacent to the periphery thereof, on the circumference of the cylindrical surface n directions (n≧2) are arranged in the direction of the interval Sx; the dimension L in the longitudinal direction of the mask region is set to e ₁ times the long side dimension Ld of the display screen region (e ₁ ≧1) When the dimension of the short side direction of the mask region is e ₂ times (e ₂ ≧ 1) of the short side dimension Lc of the display screen region, the length of the cylindrical surface in the center line direction is set to When the diameter L is equal to or larger than the diameter of the cylindrical surface and the circumference ratio is π, it is set to π φ = n (e _{2 .} Lc + Sx); further, the ratio of the dimension L to the diameter φ is L/ The diameter φ, the number n, and the interval Sx are set such that φ is in the range of 1.3 ≦ L / φ ≦ 3.8.