TWI681263B - Exposure method and device manufacturing method - Google Patents

Abstract

Provided are a substrate processing device, a device manufacturing method, and a photomask that can produce high-quality substrates with high productivity. The substrate processing apparatus of the present invention includes a mask support member that supports the pattern of the mask along the first surface curved into a cylindrical surface with a predetermined curvature in the illumination area, and along the predetermined area in the projection area A substrate support member that supports the substrate in the manner of the second surface, and rotates the mask support member such that the pattern of the reticle moves in a predetermined scanning exposure direction and causes the substrate to move the substrate in the scanning exposure direction A driving mechanism for moving the support member, the mask support member, when the diameter of the first surface is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, satisfy 1.3≦L/φ ≦3.8.

Description

Exposure method and device manufacturing method

The invention relates to a substrate processing device, a device manufacturing method and a cylindrical mask used for projecting a pattern of a photomask on a substrate, exposing the pattern on the substrate.

Conventionally, there has been an element manufacturing system for manufacturing display elements such as liquid crystal displays and various elements such as semiconductors. The component manufacturing system includes a substrate processing device such as an exposure device. The substrate processing apparatus described in Patent Document 1 projects an image of a pattern formed on a photomask arranged in an illumination area onto a substrate arranged in a projection area, etc., and exposes the pattern on the substrate. The photomask used in the substrate processing device has a flat shape, a cylindrical shape, and the like.

[Advanced technical literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-299918

In the substrate processing apparatus, the photomask can be made into a cylindrical shape to rotate the photomask, thereby continuously exposing the substrate. In addition, as a substrate processing apparatus, there is also a roll-to-roll method in which the substrate is formed into a long thin sheet and continuously fed into the projection area. In this way, the substrate processing apparatus can rotate the cylindrical mask, and as a substrate transfer method, a roll-to-roll method is used to continuously transfer both the substrate and the mask.

Here, substrate processing apparatuses are generally required to be able to expose patterns on the substrate with good efficiency to improve productivity. The same applies when using a cylindrical mask as a mask.

An object of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a cylindrical mask that can produce high-quality substrates with high productivity.

A first aspect of the present invention provides a substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a photomask arranged in an illumination light illumination area onto a projection area where a substrate is arranged, and is characterized by having a photomask support A member supporting the pattern of the reticle along the first surface curved into a cylindrical surface with a predetermined curvature in the illumination area; and a substrate supporting member along the predetermined second surface in the projection area, Supporting the substrate; and a driving mechanism to rotate the reticle support member in such a manner that the pattern of the reticle moves in a predetermined scanning exposure direction, and move the substrate support member in such a manner that the substrate moves in the scanning exposure direction; When the diameter of the first surface of the mask support member is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, 1.3≦L/φ≦3.8.

A second aspect of the present invention provides a device manufacturing method including an operation of forming the pattern of the photomask on a substrate using the substrate processing apparatus of the first aspect, and an operation of supplying the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, there is provided a cylindrical mask, a mask pattern for electronic components is formed along a cylindrical outer peripheral surface, is mounted on a predetermined exposure device, and can rotate around a center line, and is characterized by having the aforementioned outer periphery A cylindrical substrate with a length of La in the centerline direction and a diameter of φ of the outer circumferential surface; the maximum length of the mask pattern that can be formed on the outer circumferential surface of the cylindrical substrate in the centerline direction is When L is in the range of L≦La, the ratio L/φ of the diameter φ to the length L is set in the range of 1.3≦L/φ≦3.8.

According to the aspect of the present invention, by setting the relationship between the diameter φ and the length L of the cylindrical mask shape held by the mask support member or the cylindrical mask shape formed in the pattern of the mask at the above The range, that is, high-productivity and efficient exposure and transfer of device patterns. Moreover, by setting the relationship between the diameter φ and the length L within the above range, even when a plurality of patterns for a display panel are arranged along the peripheral surface of the cylindrical mask, various displays can be efficiently arranged The size of the panel.

1‧‧‧Component manufacturing system

2‧‧‧Substrate supply device

4‧‧‧ substrate recycling device

5‧‧‧Higher control device

11‧‧‧ Mask retention mechanism

12, 12a‧‧‧ substrate support mechanism

13‧‧‧Light source device

16‧‧‧lower control device

21‧‧‧Cylinder wheel

21a‧‧‧Retainer for photomask

22‧‧‧First drive unit

25‧‧‧Substrate support tube

26‧‧‧ 2nd drive unit

27、28‧‧‧Guide roller

31‧‧‧Light source

32‧‧‧Light guide member

41‧‧‧1/4 wavelength plate

51‧‧‧collimating lens

52‧‧‧ compound eye lens

53‧‧‧Condenser lens

54‧‧‧Cylinder lens

55‧‧‧Lighting field diaphragm

56‧‧‧Relay lens system

61‧‧‧First Optical Department

62‧‧‧Second optics

63‧‧‧Projection field diaphragm

64‧‧‧focus correction optical component

65‧‧‧Optical components for image switching

66‧‧‧Optical components for magnification correction

67‧‧‧Rotary correction mechanism

68‧‧‧ Polarization adjustment mechanism

70‧‧‧The first deflection member

71‧‧‧1st lens group

72‧‧‧The first concave mirror

80‧‧‧The second deflection member

81‧‧‧ 2nd lens group

82‧‧‧The second concave mirror

92‧‧‧ White Department

94‧‧‧cutting line

96‧‧‧ Mask mark

96a‧‧‧Substrate marking

A3‧‧‧Pattern forming area

A4‧‧‧non-patterned area

A7‧‧‧Exposure area

AMG1, AMG2 ‧‧‧ alignment microscope

ATB1, ATB2 ‧‧‧ air flip lever

AX1‧‧‧1st axis

AX2‧‧‧2nd axis

BT1~BT3‧‧‧Treatment tank

BX1~BX3‧‧‧First to third optical axis

CL‧‧‧Center

DL‧‧‧Buffer Department

DPA‧‧‧Display screen area

DR1~DR8‧‧‧Drive roller

EL1‧‧‧Illumination beam

EL2‧‧‧Projection beam

EPC1~EPC3‧‧‧Edge position controller

FR1‧‧‧Reel for supply

FR2‧‧‧Reel for recycling

Gp1, Gp2‧‧‧Coating mechanism

HA1, HA2‧‧‧‧Heating room

IR1~IR6‧‧‧ Illuminated area

IL1~IL6‧‧‧ Department of Illumination Optics

ILM‧‧‧Lighting optical module

M, M1, M2, M3, M4

P‧‧‧Substrate

P1‧‧‧ Mask

P2‧‧‧Support surface

P3, P4‧‧‧First and second reflecting surfaces

P7‧‧‧ middle image

PA1~PA7‧‧‧Projection area

PBS‧‧‧polarizing beam splitter

PL‧‧‧Projection optics

PLM‧‧‧Projection optical module

R1‧‧‧Press roller

R2‧‧‧Coating roller

Rm‧‧‧ radius of curvature

Rp‧‧‧ radius of curvature

SF‧‧‧shaft

Sx‧‧‧Interval

TAB‧‧‧ Peripheral circuit area

U1~Un‧‧‧Processing device

U3, U3a, U3b ‧‧‧ exposure device (substrate processing device)

FIG. 1 is a diagram showing the overall configuration of the component manufacturing system of the first embodiment.

2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2.

4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. 2.

FIG. 5 is a diagram showing the state of the illumination light beam irradiated to the cylindrical mask and the state of the projected light beam emitted from the cylindrical mask.

Fig. 6 is a perspective view showing a schematic configuration of a cylindrical wheel and a mask constituting a cylindrical mask.

7 is a development view showing an example of the arrangement when a mask for a display panel is taken from the mask surface of a cylindrical mask.

FIG. 8 is a development view showing an arrangement example in which three masks of the same size are arranged in a row on a mask surface of a cylindrical mask to take three faces.

FIG. 9 is a development view showing an arrangement example in which four masks of the same size are arranged in a row on the mask surface of a cylindrical mask.

10 is a development view showing an arrangement example in which four masks are arranged in two rows and two columns on the mask surface of a cylindrical mask.

11 is a development view illustrating an arrangement example in which a mask for a display panel with an aspect ratio of 2:1 is taken on two sides.

Fig. 12 is a graph of the relationship between the diameter of the cylindrical mask and the width of the exposure slit under a specific allowable defocus amount.

FIG. 13 is a developed view showing a specific example when one mask for a 60-inch display panel is taken.

FIG. 14 is a development view showing an arrangement example in which the photomask has two sides.

FIG. 15 is a development view showing a first arrangement example in which a photomask for a 32-inch display panel has two surfaces.

FIG. 16 is a development view showing a second arrangement example in which a photomask for a 32-inch display panel has two sides.

FIG. 17 is a development view showing a specific example when one mask for a 32-inch display panel is taken.

FIG. 18 is a development view showing a specific arrangement example when a photomask for a 32-inch display panel has three sides.

FIG. 19 is a development view showing a specific arrangement example when a photomask for a 37-inch display panel has three sides.

FIG. 20 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment.

21 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

FIG. 22 is a flowchart showing a component manufacturing method performed by the component manufacturing system.

The form (embodiment) for implementing the present invention will be described in detail below with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the constituent elements described below, of course, include those that are easy to think of by those skilled in the art and are substantially the same. In addition, the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention. For example, in the following embodiments, the device is described as an example of a case where a flexible display is manufactured, but it is not limited to this. As an element, a wiring board that forms a wiring pattern composed of copper foil or the like, a substrate that forms a large number of semiconductor elements (transistors, diodes, etc.) may be manufactured.

[First Embodiment]

In the first embodiment, the substrate processing apparatus that performs exposure processing on the substrate is an exposure apparatus. In addition, the exposure device is assembled in a device manufacturing system that performs various processes on the exposed substrate to manufacture devices. First, the component manufacturing system will be described.

<Component Manufacturing System>

FIG. 1 is a diagram showing the configuration of the component manufacturing system of the first embodiment. The component manufacturing system 1 shown in FIG. 1 is a production line (flexible display manufacturing line) for manufacturing flexible displays as components. As the flexible display, for example, there is an organic EL display. This component manufacturing system 1 sends out the substrate P from the supply reel FR1 that winds the flexible substrate P into a roll shape, and after continuously applying various treatments to the sent substrate P, the processed substrate P is wound as a flexible element around the reel for recycling FR2, a so-called roll-to-roll method. The element manufacturing system 1 of the first embodiment shows that the substrate P formed into a film-like sheet is sent out from the supply reel FR1, and the substrate P sent out from the supply reel FR1 passes sequentially through n processing devices U1 U2, U3, U4, U5, ...Un, an example of winding up to the reel for recycling FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

For the substrate P, for example, a foil made of a metal or alloy of resin film, stainless steel, or the like is used. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene-vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin , Polystyrene resin, vinyl acetate resin 1 or 2 or more.

For the substrate P, for example, it is preferable to select, for example, a coefficient of thermal expansion that is remarkably large, and the amount of deformation that can be generated due to heat in various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion, for example, can be set to be smaller than the threshold value corresponding to the process temperature or the like by mixing the inorganic filler into the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. In addition, the substrate P may be a single-layer body of extremely thin glass having a thickness of about 100 μm manufactured by a float method or the like, or a laminate in which the above-mentioned resin film, foil, or the like is bonded to the extremely thin glass.

The substrate P configured in this way is wound into a roll shape to become a supply roll FR1, and this supply roll FR1 is mounted on the component manufacturing system 1. The component manufacturing system 1 equipped with the supply reel FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent out from the supply reel FR1. Therefore, the processed substrate P is in a state where a plurality of elements are connected. In other words, the substrate P sent from the supply reel FR1 is a substrate for multiple surfaces. In addition, the substrate P may be one whose surface is modified and activated by a predetermined pre-treatment in advance, or a fine partition wall structure (concave-convex structure) for precise patterning is formed on the surface.

The processed substrate P is wound into a roll shape and collected as a collection roll FR2. The collection reel FR2 is installed in a cutting device (not shown). A cutting device equipped with a reel for recycling FR2 divides (cuts) the processed substrate P into individual components, thereby forming a plurality of components. The size of the substrate P is, for example, the size in the width direction (the direction of the short side) is about 10 cm to 2 m, and the size in the length direction (the direction of the long direction) is more than 10 m. Of course, the size of the substrate P is not limited to the above-mentioned size.

In FIG. 1, the X direction, the Y direction, and the Z direction form an orthogonal coordinate system that is orthogonal. The X direction is in the horizontal plane, and the direction connecting the supply reel FR1 and the recovery reel FR2 is the left-right direction in FIG. 1. The Y direction is the direction orthogonal to the X direction in the horizontal plane, which is the front-rear direction in FIG. 1. The Y direction is the axial direction of the supply reel FR1 and the recovery reel FR2. The Z direction is the vertical direction, which is the up and down direction in FIG. 1.

The component manufacturing system 1 includes a substrate supply device 2 that supplies substrates P, a processing device U1 to Un that performs various processes on the substrate P supplied by the substrate supply device 2, and recovers the substrate P that is processed by the processing devices U1 to Un The substrate recovery device 4 and each device upper control device 5 of the control element manufacturing system 1.

The substrate supply device 2 is provided with a supply reel FR1 in a rotatable manner. The substrate supply device 2 includes a driving roller DR1 that feeds the substrate P from the mounted supply reel FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR1 rotates while pinching the front and back surfaces of the substrate P, and sends the substrate P from the supply reel FR1 toward the conveyance direction of the collection reel FR2, thereby supplying the substrate P to the processing devices U1 to Un. At this time, the edge position controller EPC1 moves the substrate P in such a manner that the position of the end (edge) of the substrate P in the width direction relative to the target position is within the range of ± tens of μm to ± tens of μm In the width direction, the position of the substrate P in the width direction is corrected.

The substrate recovery device 4 is provided with a recovery reel FR2 in a rotatable manner. The substrate recovery device 4 has a driving roller DR2 that pulls the processed substrate P toward the recovery reel FR2 side, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while holding the front and back surfaces of the substrate P with the drive roller DR2, pulls the substrate P in the transport direction, and rotates the recovery reel FR2 to wind the substrate P accordingly. At this time, the edge position controller EPC2 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction to avoid unevenness in the width direction end (edge) of the substrate P.

The processing device U1 is a coating device that coats a photosensitive functional liquid on the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling agent (a photosensitive liquid-repellent modified material, a photosensitive plating return material, etc.), a UV hardening resin liquid, etc. are used. The processing device U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the conveyance direction of the substrate P. The coating mechanism Gp1 has a pressure roller R1 wound around the substrate P, and a coating roller R2 opposed to the pressure roller R1. The coating mechanism Gp1 sandwiches the substrate P between the pressing roller R1 and the coating roller R2 in a state where the supplied substrate P is wound around the pressing roller R1. Next, the coating mechanism Gp1 applies the photosensitive functional liquid by the coating roller R2 while moving the substrate P in the conveying direction by rotating the pressure roller R1 and the coating roller R2. The drying mechanism Gp2 blows out drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid to dry the substrate P coated with the photosensitive functional liquid to form the photosensitivity on the substrate P Function layer.

The processing device U2 is a heating device that heats the substrate P transferred from the processing device U1 to a predetermined temperature (for example, about 10 to 120°C) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing device U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the conveyance direction of the substrate P. In the heating chamber HA1, a plurality of rollers and a plurality of air turn bars are provided inside the plurality of rollers and a plurality of air turn bars. The plurality of rollers and the plurality of air turn bars constitute a conveyance path of the substrate P. A plurality of rollers are provided so as to contact the back surface of the substrate P, and a plurality of air turning bars are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air reversing rods extend the conveying path of the substrate P, and form a meandering conveying path. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being transported along the meandering transport path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the ambient temperature of the post-process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers inside, and the plurality of rollers, like the heating chamber HA1, are arranged in a serpentine transport path to lengthen the transport path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being transported along the meandering transport path. A driving roller DR3 is provided on the downstream side of the cooling chamber HA2 in the conveying direction. The driving roller DR3 rotates while sandwiching the substrate P passing through the cooling chamber HA2, thereby supplying the substrate P to the processing device U3.

The processing device (substrate processing device) U3 is an exposure device that projects a pattern such as a circuit or wiring for an exposure display on a substrate (photosensitive substrate) P that is supplied from the processing device U2 and has a photosensitive functional layer formed on its surface. The details will be described later. The processing device U3 illuminates the reflective cylindrical mask M (cylinder wheel 21) with an illumination beam, and projects the projection beam reflected by the illumination beam on the mask M onto the substrate P. The processing device U3 includes a driving roller DR4 that sends the substrate P supplied from the processing device U2 to the downstream side in the conveyance direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR4 rotates while gripping both the front and back surfaces of the substrate P, and sends the substrate P to the downstream side in the conveying direction, thereby supplying the substrate P toward the rotating cylinder (substrate support cylinder) 25 that supports the substrate P at the exposure position . The edge position controller EPC3 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position.

The processing device U3 includes a buffer portion DL having two sets of drive rollers DR6 and DR7 that transport the substrate P to the downstream side in the conveying direction while the substrate P after exposure is slackened. The two sets of drive rollers DR6 , DR7 is arranged at a predetermined interval in the transport direction of the substrate P. The driving roller DR6 clamps and rotates the upstream side of the transferred substrate P, and the driving roller DR7 clamps and rotates the downstream side of the transferred substrate P, thereby supplying the substrate P to the processing device U4. At this time, since the substrate P is given slack, it is possible to absorb the variation in the conveying speed that is generated downstream of the driving roller DR7 in the conveying direction, and the influence of the variation in the conveying speed on the exposure processing of the substrate P can be eliminated. In addition, in the processing device U3, the relative position of the image of a part of the mask pattern of the cylindrical mask M (hereinafter, also referred to simply as the mask M) is aligned with the substrate P (alignment) ), and alignment microscopes AMG1, AMG2 that detect alignment marks formed on the substrate P in advance, or reference patterns formed on a part of the outer peripheral surface of the rotating cylinder (substrate support cylinder) 25, etc. are provided.

The processing device U4 is a wet processing device that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing device U3. The processing device U4 has three processing tanks BT1, BT2, BT3 staged in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P inside. The plural rollers are arranged in such a manner that the substrate P sequentially passes through the transport paths inside the three processing tanks BT1, BT2, and BT3. A driving roller DR8 is provided on the downstream side of the processing tank BT3 in the conveying direction. The driving roller DR8 rotates while holding the substrate P passing through the processing tank BT3, thereby supplying the substrate P to the processing device U5.

Although not shown, the processing device U5 is a drying device that dries the substrate P transferred from the processing device U4. The processing device U5 removes the droplets attached to the substrate P by wet processing in the processing device U4, and adjusts the moisture content of the substrate P. The substrate P dried by the processing device U5 is transported to the processing device Un after passing through several processing devices. After being processed by the processing device Un, the substrate P is wound around the collection reel FR2 of the substrate collection device 3.

The upper-level control device 5 coordinates and controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The higher-level control device 5 controls the substrate supply device 2 and the substrate recovery device 4, and transports the substrate P from the substrate supply device 2 to the substrate recovery device 4. In addition, the higher-level control device 5 synchronizes the conveyance of the substrate P, and controls a plurality of processing devices U1 to Un to perform various processings on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure device (substrate processing device) as the processing device U3 of the first embodiment will be described with reference to FIGS. 2 to 5. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in FIG. 2. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. 2. FIG. 5 is a diagram showing the state of the illumination light beam irradiated to the photomask and the projection light beam emitted from the photomask.

The exposure device U3 shown in FIG. 2 is a so-called scanning exposure device, and projects and exposes the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M onto the surface of the substrate P while transporting the substrate P in the transport direction. In addition, FIG. 2 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal, and is the same orthogonal coordinate system as FIG. 1.

First, the mask M (cylindrical mask M in FIG. 1) used for the exposure device U3 will be described. The mask M is, for example, a reflective mask using a metal cylindrical body. The pattern of the mask M is formed on a cylindrical base material having an outer circumferential surface (circumferential surface) with a radius of curvature Rm centered on the first axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface (first surface) P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection portion that reflects the light beam with high efficiency in a predetermined direction, and a reflection suppression portion (low reflection portion) that does not reflect the light beam in the predetermined direction or reflects the light beam with low efficiency. The mask pattern is formed by the high reflection part and the reflection suppression part. Here, the reflection suppression unit only needs to reduce the light reflected in a predetermined direction. Therefore, the reflection suppression portion may be composed of a material that absorbs light, a material that transmits light, or a material that diffracts light except in a specific direction. As the exposure device U3, as the photomask M of the above configuration, a photomask made of a cylindrical base material of metal such as aluminum and SUS can be used. Therefore, the exposure device U3 can use an inexpensive mask for exposure.

In addition, the mask M may be all or part of the panel pattern corresponding to one display element, or may be a panel pattern corresponding to a plurality of display elements. In addition, the photomask M may be a panel pattern that repeatedly forms a plurality of polyhedrons around the first axis AX1, or a small panel pattern repeatedly forms a plurality of polyhedrons in a direction parallel to the first axis AX1 . In addition, the mask M may be a multi-faceted one in which the pattern for the panel in which the first display element is formed and the pattern for the panel in the second display element that are different from the size of the first display element and the like are multifaceted. In addition, the mask M only needs to have a circumferential surface with a radius of curvature Rm centered on the first axis AX1, and is not limited to the shape of a cylindrical body. For example, the photomask M may be an arc-shaped plate material having a circumferential surface. In addition, the mask M may be in the form of a thin plate, or may be made by bending the mask M in a thin plate shape to have a circumferential surface.

Next, the exposure device U3 shown in FIG. 2 will be described. In addition to the above-mentioned drive rollers DR4, DR6, DR7, the substrate support cylinder 25, the edge position controller EPC3, and the alignment microscopes AMG1, AMG2, the exposure device U3 also has a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system IL, The projection optical system PL and the lower control device 16. The exposure device U3 illuminates the illumination light emitted from the light source device 13 through a part of the illumination optical system IL and the projection optical system PL to be supported by a mask holding cylinder 21 (hereinafter, also referred to as cylinder wheel 21) of the mask holding mechanism 11 The patterned mask surface P1 of the photomask M projects the projection light beam (imaging light) reflected from the photomask surface P1 of the photomask M through the projection optical system PL to the substrate support tube 25 of the substrate support mechanism 12 Supported substrate P.

The lower-level control device 16 controls each part of the exposure device U3 and causes each part to perform processing. The lower control device 16 may be a part or all of the upper control device 5 of the component manufacturing system 1. In addition, the lower control device 16 may be another device controlled by the upper control device 5 and different from the upper control device 5. The lower control device 16 includes, for example, a computer.

The reticle holding mechanism 11 includes a cylindrical wheel 21 that holds the reticle M, and a first drive unit 22 that rotates the cylindrical wheel 21. The cylindrical wheel 21 holds the mask M as a cylinder having a radius of curvature Rm with the first axis AX1 of the mask M as the rotation center. The first drive unit 22 is connected to the lower-level control device 16 and rotates the cylindrical wheel 21 about the first axis AX1 as the center of rotation.

In addition, although the cylindrical wheel 21 of the mask holding mechanism 11 directly forms a mask pattern with a high reflection part and a low reflection part on its outer peripheral surface, it is not limited to this configuration. The cylindrical wheel 21 as the mask holding mechanism 11 can be held by winding a thin-plate-shaped reflective mask M along its outer peripheral surface. In addition, the cylindrical wheel 21 as the mask holding mechanism 11 may also be detachably held on the outer peripheral surface of the cylindrical wheel 21 via a plate-shaped reflective mask M bent in an arc shape with a radius Rm in advance.

The substrate support mechanism 12 includes a substrate support cylinder 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support cylinder 25, a pair of air reversing levers ATB1, ATB2, and a pair of guide rollers 27, 28. The substrate support cylinder 25 is formed into a cylindrical shape having an outer peripheral surface (circumferential surface) with a radius of curvature Rp centered on the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the plane passing (including) the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate support cylinder 25 is a support surface P2 that supports the substrate P. In other words, the substrate supporting cylinder 25 is stably supported by winding the substrate P on its supporting surface P2, thereby bending the substrate P into a cylindrical surface. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support tube 25 about the second axis AX2 as the center of rotation. The pair of air reversing levers ATB1, ATB2 and the pair of guide rollers 27, 28 are provided on the upstream side and the downstream side of the substrate P in the conveying direction of the substrate P with the substrate support cylinder 25 interposed therebetween. The guide roller 27 guides the substrate P conveyed from the drive roller DR4 to the substrate support cylinder 25 through the air reversing lever ATB1, and the guide roller 28 guides the substrate P conveyed from the air reversing lever ATB2 via the substrate support cylinder 25 to the drive roller DR6.

The substrate support mechanism 12 rotates the substrate support cylinder 25 by the second driving unit 26, and accordingly, the substrate P introduced into the substrate support cylinder 25 is fed at a predetermined speed while being supported by the support surface P2 of the substrate support cylinder 25 Length direction (X direction).

At this time, the lower control device 16 connected to the first drive unit 22 and the second drive unit 26 rotates the cylindrical wheel 21 and the substrate support cylinder 25 synchronously at a predetermined rotation speed ratio, so that the light formed in the mask M The projected image of the mask pattern of the mask surface P1 is continuously and repeatedly scanned and exposed to the surface of the substrate P wound on the support surface P2 of the substrate support cylinder 25 (the surface curved along the circumferential surface). The exposure device U3, the first drive unit 22, and the second drive unit 26 are the moving mechanism of this embodiment. In the exposure apparatus U3 shown in FIG. 2, the portion of the guide roller 27 that is upstream of the substrate P in the conveying direction is the substrate supply portion that supplies the substrate P to the support surface P2 of the substrate support cylinder 25. In the substrate supply section, the supply reel FR1 shown in FIG. 1 can be directly provided. Similarly, a portion of the guide roller 28 that is located downstream of the substrate P in the conveying direction is a substrate collection portion that collects the substrate P from the support surface P2 of the substrate support cylinder 25. In the substrate collection section, the collection reel FR2 shown in FIG. 1 can be directly installed.

The light source device 13 emits an illumination light beam EL1 that illuminates the mask M. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 emits light of a predetermined wavelength. The light source 31 is a solid-state laser light source such as a lamp light source such as a mercury lamp, a gas laser light source such as an excimer laser, a laser diode, or a light-emitting diode (LED). The illumination light emitted by the light source 31 can use the glow line (g line, h line, i line) of the ultraviolet band when using a mercury lamp, for example, and can use KrF excimer laser light (wavelength) when using an excimer laser light source. 248nm) and ArF excimer laser light (wavelength 193nm) and other extreme ultraviolet light (DUV light). Here, the light source 31 preferably emits an illumination light beam EL1 having a shorter wavelength than the i-line (365 nm wavelength). As such an illumination beam EL1, laser light (wavelength 355 nm) emitted as the third harmonic of YAG laser and laser light (wavelength 266 nm) emitted as the fourth harmonic of YAG laser can be used.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 may be configured using an optical fiber, a relay module of a mirror, or the like. In addition, when a plurality of illumination optical systems IL are provided, the light guide member 32 divides the illumination light beam EL1 from the light source 31 into a plurality of pieces, and then guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. The light guide member 32 of the present embodiment enters the polarization beam splitter PBS with the light beam EL1 emitted from the light source 31 into a predetermined polarization state. The polarizing beam splitter PBS is provided between the reticle M and the projection optical system PL to illuminate the reticle M vertically, and reflects the linearly polarized light beam of S-polarized light and transmits the linearly polarized light beam of P-polarized light. Therefore, the light source device 13 emits the illumination light beam EL1 that enters the polarization beam splitter PBS into a linearly polarized light (S-polarized light). The light source device 13 emits polarized laser light having the same wavelength and phase to the polarizing beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses a polarization-preserving optical fiber as the light guide member 32 and guides light while maintaining the polarization state of the laser light output from the light source device 13. In addition, for example, the light beam output from the light source 31 may be guided by an optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 can polarize the randomly polarized light beam with a polarizing plate when the randomly polarized light beam is guided. In addition, the light source device 13 may guide the light beam output from the light source 31 by using a relay optical system such as a lens.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is a so-called multi-lens exposure apparatus. In addition, FIG. 3 shows a plan view (left view in FIG. 3) of the illumination region IR held on the mask M of the cylindrical wheel 21 from the -Z side, and the substrate P supported by the substrate support cylinder 25 The top view of the projection area PA of the projection area PA seen from the +Z side (right image of FIG. 3). The symbol Xs in FIG. 3 represents the moving direction (rotation direction) of the cylindrical wheel 21 and the substrate support tube 25. The multi-lens exposure device U3 illuminates a plurality of (for example, six in the first embodiment) illumination regions IR1 to IR6 on the reticle M with illumination light beams EL1, and illuminates each illumination light beam EL1 in each illumination area IR1 A plurality of projection light beams EL2 reflected by IR6 are projected and exposed to a plurality of (for example, 6 in the first embodiment) projection areas PA1 to PA6 on the substrate P.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, a plurality of illumination regions IR1 to IR6 sandwich the center plane CL, and the first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged on the mask M on the upstream side in the rotation direction. The second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged on the mask M on the downstream side in the rotation direction. Each illumination region IR1~IR6 is an elongated trapezoidal region with parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each illumination area IR1 to IR6 of the trapezoid is an area where the short side is located on the center plane CL side and the long side is located on the outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is arranged between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is arranged between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is arranged between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is arranged between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. The illumination regions IR1 to IR6 are arranged such that when the triangles of the oblique sides of the trapezoidal illumination regions adjacent in the Y direction rotate in the circumferential direction (X direction) of the mask M, they overlap each other. In the first embodiment, although the illumination regions IR1 to IR6 are trapezoidal regions, they may be rectangular regions.

In addition, the mask M has a pattern formation area A3 where the mask pattern is formed, and a non-pattern formation area A4 where the mask pattern is not formed. The non-pattern-formed area A4 is a low-reflective area (reflection suppression portion) that hardly reflects the illumination light beam EL1, and is arranged in a frame shape around the pattern-formed area A3. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern forming region A3 in the Y direction.

The illumination optical system IL is provided with a plurality of plural illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on a plurality of illumination optical systems (divided illumination optical systems) IL1 to IL6. The illumination optical systems IL1 to IL6 guide the illumination light beams EL1 incident from the light source device 13 to the illumination regions IR1 to IR6, respectively. That is, the first illumination optical system IL1 directs the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 direct the illumination light beam EL1 to the second to sixth illumination regions IR2 to IR6 . Plural illumination optical systems IL1 to IL6 sandwich the center plane CL, and the first illumination optical systems IL1 and 3 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged (left side in FIG. 2). The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 sandwich the center plane CL, and the second illumination optical systems IL2, II2, IR4, and IR6 are arranged on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are arranged (right side in FIG. 2). The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at predetermined intervals in the Y direction. At this time, the second illumination optical system IL2 is arranged between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are respectively arranged between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction, and the third illumination optical system Between the system IL3 and the fifth illumination optical system IL5, and between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. In addition, the first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 and the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged from the Y direction Into symmetry.

Next, referring to FIG. 4, each illumination optical system IL1 to IL6 will be described. In addition, since the configurations of the illumination optical systems IL1 to IL6 are the same, the first illumination optical system IL1 (hereinafter, simply referred to as the illumination optical system IL) will be described as an example.

The illumination optics IL illuminates the illumination area IR (the first illumination area IR1) with uniform illuminance, and illuminates the illumination area IR on the photomask M with the illumination beam EL1 from the light source 31 of the light source device 13. In addition, as the illumination optical system IL system, an epi-illumination system using a polarizing beam splitter PBS is used. The illumination optical system IL includes an illumination optical module ILM, a polarizing beam splitter PBS, and a 1/4 wavelength plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, an illumination field diaphragm 55, And the relay lens system 56 is provided on the first optical axis BX1. The collimator lens 51 enters the light emitted from the light guide member 32 and irradiates the entire incident side surface of the fly-eye lens 52. The center of the exit side of the fly-eye lens 52 is arranged on the first optical axis BX1. The fly-eye lens 52 generates the surface light source image by dividing the illumination light beam EL1 from the collimator lens 51 into a plurality of point light source images. The illumination light beam EL1 is generated from this surface light source image. At this time, the surface on the exit side of the compound eye lens 52 that generates the point light source image is passed through the various lenses from the compound eye lens 52 through the illumination field diaphragm 55 to the first concave mirror 72 of the projection optical system PL described later, and the first concave mirror 72 The pupil plane where the reflecting surface is located is optically conjugated. The optical axis of the condenser lens 53 provided on the emission side of the fly-eye lens 52 is arranged on the first optical axis BX1. The condenser lens 53 superimposes light from each point light source image formed on the exit side of the compound eye lens 52 on the illumination field diaphragm 55, and then illuminates the illumination field diaphragm 55 with a uniform illuminance distribution. The illumination field diaphragm 55 has a trapezoidal or rectangular rectangular opening similar to the illumination region IR shown in FIG. 3, and the center of the opening is arranged on the first optical axis BX1. With the relay lens system (imaging system) 56, the polarizing beam splitter PBS, and the 1/4 wavelength plate 41 arranged in the optical path from the illumination field diaphragm 55 to the mask M, the opening of the illumination field diaphragm 55 is It is arranged in an optically conjugate relationship with the illumination region IR on the mask M. The relay lens system 56 is composed of a plurality of lenses 56a, 56b, 56c, and 56d arranged along the first optical axis BX1, and illuminates the illumination light beam EL1 that penetrates the opening of the illumination field diaphragm 55 through the polarizing beam splitter PBS Illumination area IR on the cover M. A cylindrical lens 54 is provided on the exit side of the condenser lens 53 and adjacent to the illumination field stop 55. The cylindrical lens 54 is a plano-convex cylindrical lens with a plane on the entrance side and a convex cylindrical lens on the exit side. The optical axis of the cylindrical lens 54 is arranged on the first optical axis BX1. The cylindrical lens 54 causes each principal ray of the illumination light beam EL1 of the illumination area IR irradiated on the mask M to converge in the XZ plane and make it parallel in the Y direction.

The polarizing beam splitter PBS is arranged between the illumination optical module ILM and the center plane CL. The polarizing beam splitter PBS reflects the linearly polarized light beam that becomes S-polarized light on the wavefront dividing surface, and transmits the linearly polarized light beam of P-polarized light. Here, if the illumination beam EL1 incident on the polarizing beam splitter PBS is linearly polarized S-polarized light, the illumination beam EL1 is reflected on the wavefront dividing surface of the polarizing beam splitter PBS and penetrates the 1/4 wavelength plate 41 to become circularly polarized light Irradiate the illumination area IR on the photomask M. The projection light beam EL2 reflected on the illumination area IR on the mask M is converted from circular polarized light into linear P polarized light by passing through the 1/4 wavelength plate 41 again, penetrates the wavefront splitting surface of the polarizing beam splitter PBS, and then faces the projection optics Department PL. The polarizing beam splitter PBS is capable of reflecting most of the illumination light beam EL1 incident on the wavefront dividing surface and making most of the projection light beam EL2 penetrate. The polarization separation characteristics of the wavefront splitting surface of the polarizing beam splitter PBS are expressed by the extinction ratio. Since the extinction ratio also changes due to the incident angle of the light toward the wavefront splitting surface, the characteristics of the wavefront splitting surface are useful The effect of the upper imaging performance is not a way to be a problem, and it is designed in consideration of the NA (number of openings) of the illumination beam EL1 and the projection beam EL2.

FIG. 5 is an exaggerated display of the actions of the illumination light beam EL1 illuminating the illumination area IR on the mask M and the projection light beam EL2 reflected in the illumination area IR in the XZ plane (plane perpendicular to the first axis AX1). As shown in FIG. 5, the illumination optics IL described above makes the chief ray of the projection light beam EL2 reflected in the illumination area IR of the mask M telecentric (parallel system), and illuminates the illumination area IR of the mask M Each principal ray of the light beam EL1 deliberately becomes non-telecentric in the XZ plane (plane perpendicular to the first axis AX1), and becomes telecentric in the YZ plane (parallel to the center plane CL). This characteristic of the illumination light beam EL1 is imparted by the cylindrical lens 54 shown in FIG.

Specifically, when a line passing through the center point Q1 of the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 is set, and the intersection point Q2 (1/2 Radius position), the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that each principal ray of the illumination light beam EL1 passing through the illumination area IR faces the intersection point Q2 on the XZ plane. In this way, in the XZ plane, each principal ray of the projection light beam EL2 reflected in the illumination region IR becomes parallel (telecentric) to the straight line passing through the first axis AX1, point Q1, and intersection point Q2.

Next, a plurality of projection areas PA1 to PA6 subjected to projection exposure by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P sandwich the center plane CL, and the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged on the substrate P on the upstream side in the conveying direction, The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P on the downstream side in the conveying direction. Each of the projection areas PA1 to PA6 has an elongated trapezoidal (rectangular) area extending on the short side and long side of the width direction (Y direction) of the substrate P. At this time, each projection area PA1 to PA6 of the trapezoid is an area where the short side is located on the side of the center plane CL and the long side is located on the outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. In addition, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at predetermined intervals in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. The projection areas PA1 to PA6, like the illumination areas IR1 to IR6, are arranged such that the triangular portions of the oblique side portions of the trapezoidal projection area PA adjacent in the Y direction overlap each other in the transport direction of the substrate P. At this time, the projection area PA has a shape in which the exposure amount in the overlapping area of the adjacent projection area PA is substantially the same as the exposure amount in the non-overlapping area. In addition, the first to sixth projection areas PA1 to PA6 are configured to cover the full width in the Y direction of the exposure area A7 exposed to the substrate P.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination region IR1 (and IR3, IR5) to the center point of the illumination region IR2 (and IR4, IR6) on the reticle M is set The result is substantially the same as the circumference from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection area PA2 (and PA4, PA6).

The projection optical system PL system is provided with a plurality of plural projection areas PA1 to PA6 (for example, six in the first embodiment). In the plurality of projection optical systems (split projection optical systems) PL1 to PL6, the plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are respectively incident. Each projection optical system PL1~PL6 directs each projection light beam EL2 reflected by the mask M to each projection area PA1~PA6. In other words, the first projection optical system PL1 directs the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1. Similarly, the second to sixth projection optical systems PL2 to PL6 will come from the second to sixth illumination The projection beams EL2 of the regions IR2 to IR6 are directed to the second to sixth projection regions PA2 to PA6. A plurality of projection optical systems PL1 to PL6, sandwiching the center plane CL, are disposed on the side where the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged (left side in FIG. 2), and the first projection optical systems PL1 and PL6 are arranged. 3 The projection optical system PL3 and the fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the second projection optical system PL2 is arranged on the side where the second, fourth, and sixth projection areas PA2, PA4, and PA6 are arranged (the right side in FIG. 2). , The fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at predetermined intervals in the Y direction. At this time, the second projection optical system PL2 is arranged between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged in the axial direction between the second projection optical system PL2 and the fourth projection optical system PL4, and the third projection Between the optical system PL3 and the fifth projection optical system PL5, and between the fourth projection optical system PL4 and the sixth projection optical system PL6. Also, the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6, viewed from the Y direction Configured to be symmetrical.

4 again, each projection optical system PL1 to PL6 will be described. In addition, since the projection optical systems PL1 to PL6 have the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects the image of the mask pattern of the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL has the quarter-wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in this order from the incident side of the projection light beam EL2 from the mask M.

The 1/4 wavelength plate 41 and the polarization beam splitter PBS are used in combination with the illumination optics IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter-wave plate 41 and the polarizing beam splitter PBS.

The projection light beam EL2 reflected in the illumination area IR enters the projection optical system PL in a telecentric state (a state in which the principal rays are parallel to each other). The circularly polarized projection light beam EL2 reflected in the illumination area IR is converted from circularly polarized light to linearly polarized light (P polarized light) by the 1/4 wavelength plate 41, and then enters the polarizing beam splitter PBS. The projection beam EL2 incident on the polarizing beam splitter PBS penetrates the polarizing beam splitter PBS and then enters the projection optical module PLM.

The projection optical module PLM is set corresponding to the illumination optical module ILM. In other words, the projection optical module PLM of the first projection optical system PL1 projects the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 onto the substrate P The first projection area PA1. Similarly, the projection optical modules LM of the second to sixth projection optical systems PL2 to PL6 will be illuminated by the second to sixth illumination regions IR2 of the second to sixth illumination optical systems IL2 to IL6, the illumination optical modules ILM The image of the mask pattern of IR6 is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that images an image of a mask pattern in the illumination area IR on an intermediate image plane P7, and at least an intermediate image that images the first optical system 61 A part of the second optical system 62 is re-imaged on the projection area PA of the substrate P, and the projection field diaphragm 63 disposed on the intermediate image plane P7 forming the intermediate image. In addition, the projection optical module PLM includes a focus correction optical member 64, an image switching optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.

The first optical system 61 and the second optical system 62 are, for example, Dyson-based telecentric catadioptric optical systems that are deformed. In the first optical system 61, the optical axis (hereinafter, referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71, and a first concave mirror 72. The first deflection member 70 has a triangular prism of the first reflecting surface P3 and the second reflecting surface P4. The first reflection surface P3 reflects the projection light beam EL2 from the polarizing beam splitter PBS, and the reflected projection light beam EL2 enters the surface of the first concave mirror 72 through the first lens group 71. The second reflection surface P4 is a surface where the projection light beam EL2 reflected by the first concave mirror 72 enters through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field diaphragm 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are arranged on the second optical axis BX2. The first concave mirror 72 is arranged on the pupil plane of the first optical system 61, and is set to be optically conjugate to a plurality of point light source images generated by the fly eye lens 52.

The projected light beam EL2 from the polarizing beam splitter PBS is reflected on the first reflecting surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the field of view of the upper half of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and enters the second reflecting surface P4 of the first deflecting member 70 through the field of view in the lower half of the first lens group 71. The projection light beam EL2 incident on the second reflection surface P4 is reflected on the second reflection surface P4, passes through the focus correction optical member 64 and the image switching optical member 65, and then enters the projection field diaphragm 63.

The projection field diaphragm 63 has an opening that defines the shape of the projection area PA. That is, the actual shape of the projection area PA is defined by the shape of the opening of the projection field diaphragm 63. Therefore, when the opening shape of the illumination field diaphragm 55 in the illumination optical system IL is made into a trapezoid similar to the substantial shape of the projection area PA, the projection field diaphragm 63 can be omitted.

The configuration of the second optical system 62 is the same as that of the first optical system 61, and is symmetrically arranged with the first optical system 61 with the intermediate image plane P7 in between. The second optical system 62 has an optical axis (hereinafter referred to as a third optical axis BX3) that is substantially orthogonal to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81, and a second concave mirror 82. The second deflection member 80 has a third reflection surface P5 and a fourth reflection surface P6. The third reflection surface P5 reflects the projection light beam EL2 from the projection field diaphragm 63, and the reflected projection light beam EL2 enters the surface of the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface of the projection light beam EL2 reflected by the second concave mirror 82 after passing through the second lens group 81 and reflecting the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are arranged on the third optical axis BX3. The second concave mirror 82 is arranged on the pupil plane of the second optical system 62, and is set to be in an optically conjugate relationship with a plurality of point light sources imaged on the first concave mirror 72.

The projected light beam EL2 from the field diaphragm 63 is reflected on the third reflection surface P5 of the second deflection member 80, passes through the field of view of the upper half of the second lens group 81, and enters the second concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view in the lower half of the second lens group 81, and enters the fourth reflecting surface P6 of the second deflection member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected on the fourth reflection surface P6, and is projected on the projection area PA by the magnification correction optical member 66. According to this, the image of the mask pattern in the illumination area IR is projected on the projection area PA at an equal magnification (×1).

The focus correction optical member 64 is arranged between the first deflection member 70 and the projection field diaphragm 63. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected on the substrate P. The focus correction optical member 64 is a parallel flat plate in which, for example, two pieces of wedge-shaped prisms are stacked in the reverse direction (reverse direction in the X direction in FIG. 4 ). Sliding the pair of prisms into the direction of the inclined surface without changing the interval between the opposing surfaces can make the thickness of the parallel flat plate variable. In this way, the effective optical path length of the first optical system 61 can be finely adjusted to finely adjust the focus state of the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA.

The image switching optical member 65 is arranged between the first deflection member 70 and the projection field diaphragm 63. The image switching optical member 65 adjusts the image of the mask pattern projected on the substrate P to be movable within the image plane. The image switching optical member 65 is composed of a transparent parallel plate glass which can be tilted in the XZ plane in FIG. 4 and a transparent parallel plate glass which can be tilted in the YZ plane in FIG. By adjusting the amount of inclination of the two parallel flat glasses, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is arranged between the second deflection member 80 and the substrate P. The magnification correction optical member 66, for example, arranges three concave lenses, convex lenses, and concave lenses coaxially at a predetermined interval, fixes the front and rear concave lenses, and moves the convex lenses in between in the direction of the optical axis (principal ray). In this way, the image of the mask pattern formed in the projection area PA can maintain a telecentric imaging state while being enlarged or reduced by an equal amount. Furthermore, the optical axes of the three lens groups constituting the magnification correction optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2.

The rotation correction mechanism 67 is, for example, an actuator (not shown) that slightly rotates the first deflection member 70 about an axis parallel to the Z axis. The rotation correction mechanism 67 can rotate the first deflection member 70 to slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the intermediate image plane P7.

The polarization adjustment mechanism 68 is, for example, an actuator (not shown) that rotates the 1/4 wavelength plate 41 around an axis orthogonal to the plate surface to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected to the projection area PA by rotating the 1/4 wavelength plate 41.

In the projection optical system PL configured in this way, the projection light beam EL2 from the reticle M exits from the illumination region IR in a telecentric state (a state where the principal rays are parallel to each other), passes through the 1/4 wavelength plate 41 and the polarizing beam splitter After PBS, the first optical system 61 is injected. The projection light beam EL2 incident on the first optical system 61 is reflected on the first reflection surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, passes through the first lens group 71, and is reflected on the first concave mirror 72. The projected light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflection surface (plane mirror) P4 of the first deflection member 70, penetrating the focus correction optical member 64 and the image switching optical member 65 After entering the projection field diaphragm 63. The projection light beam EL2 that has passed through the projection field diaphragm 63 is reflected on the third reflection surface (plane mirror) P5 of the second deflection member 80 of the second optical system 62, passes through the second lens group 81, and then reflects on the second concave mirror 82. The projection light beam EL2 reflected by the second concave mirror 82 is reflected by the second lens group 81 on the fourth reflection surface (plane mirror) P6 of the second deflection member 80, and then enters the optical member 66 for magnification correction. The projection light beam EL2 emitted from the magnification correction optical member 66 enters the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected onto the projection area PA at an equal magnification (×1).

In this embodiment, although the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are inclined relative to the central plane CL (or optical axes BX2, BX3) 45° surface, but the first reflecting surface (plane mirror) P3 of the first deflection member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflection member 80 are set relative to the central plane CL (or optical axis BX2, BX3) It is an angle other than 45°. The angle α° (absolute value) of the first reflecting surface P3 of the first deflection member 70 with respect to the central plane CL (or optical axis BX2) is shown in FIG. 5 at the straight line passing the point Q1, the intersection point Q2, and the first axis AX1 When the angle to the center plane CL is set to θ s°, the relationship is α°=45°+θ s°/2. Similarly, the angle β° (absolute value) of the fourth reflecting surface P6 of the second deflection member 80 with respect to the center plane CL (or the second optical axis BX2) passes through the projection area in the circumferential direction of the outer peripheral surface of the substrate support tube 25 When the angle between the chief ray of the projection beam EL2 at the center point in the PA and the center plane CL in the ZX plane is set to ε s°, the relationship is β°=45°+ε s°/2.

<mask and mask support tube>

Next, the configuration of the cylindrical wheel (mask holding cylinder) 21 and the mask M of the mask holding mechanism 11 in the exposure apparatus U3 of the first embodiment will be described using FIGS. 6 and 7. 6 is a perspective view showing a schematic configuration of a cylindrical wheel 21 and a mask M formed on the outer peripheral surface thereof. FIG. 7 is a developed view showing a schematic configuration of the mask surface P1 when the outer peripheral surface of the cylindrical wheel 21 is developed into a flat surface.

In this embodiment, the mask M is a reflective sheet mask, although whether it is wound around the outer circumferential surface of the cylindrical wheel 21, the cylindrical wheel 21 is made of a metal cylindrical base Any of the cases where the reflective mask pattern is directly formed on the outer circumferential surface of the tube base material can be applied, but here is a simplified description, and the latter case will be described. The mask M formed on the mask surface P1 of the outer peripheral surface (diameter φ) of the cylindrical wheel 21 is composed of a pattern formation area A3 and a non-pattern formation area (light shielding zone area) A4 as shown in FIG. 3 above. The mask M shown in FIGS. 6 and 7 passes through the projection areas PA1 to PA6 of the projection optical systems PL1 to PL6 and corresponds to the pattern formation area A3 of the exposure area A7 projected on the substrate P in FIG. 3. Although the mask M (pattern forming area A3) is formed in substantially the entire circumferential direction of the outer peripheral surface of the cylindrical wheel 21, when the width (length) in the direction parallel to the first axis AX1 (Y direction) is set to L Is smaller than the length La of the direction in which the outer circumferential surface of the cylindrical wheel 21 is parallel to the first axis AX1 (Y direction). In addition, in the case of this embodiment, the mask M is not closely arranged at 360° on the outer circumferential surface of the cylindrical wheel 21, but is provided in the circumferential direction with the blank portion 92 of a predetermined size interposed therebetween. Therefore, both ends in the circumferential direction of the blank portion 92 correspond to the end and the beginning of the scanning exposure direction of the mask M (pattern forming area A3).

In addition, in FIG. 6, a shaft SF coaxial with the first axis AX1 is provided on both end portions of the cylindrical wheel 21. The shaft SF supports the cylindrical wheel 21 through a bearing provided at a predetermined position in the exposure device U3. The bearing is a contact type using a metal ball or needle, or a non-contact type such as a static pressure gas bearing. Furthermore, in the outer peripheral surface of the cylindrical wheel 21 (mask surface P1), each of the end regions outside the region of the mask M in the Y direction parallel to the first axis AX1, in the circumferential direction The encoder scale for measuring the rotational angle position of the cylindrical wheel 21 (mask M) with high accuracy is formed in a comprehensive manner. The scale circular plate engraved with the encoder scale for measuring the rotation angle position can also be fixed coaxially with the axis SF.

Here, FIG. 7 shows a state where the outer peripheral surface of the cylindrical wheel 21 of FIG. 6 is cut and unfolded by the cutting line 94 in the blank portion 92. In the following description, the direction orthogonal to the Y direction in the state where the outer peripheral surface is developed is defined as the θ direction. As shown in FIG. 7, the entire circumference of the mask surface P1 has a diameter of φ and a circumferential ratio of π, and therefore is π φ. In addition, with respect to the full length La of the mask surface P1 parallel to the first axis AX1, the length L of the mask M (pattern forming area A3) in the Y direction parallel to the first axis AX1 is formed by L≦La, It is formed with a length Lb in the θ direction. The total length of the mask surface P1 minus the length of the length Lb is the total size of the white portion 92 in the θ direction. Alignment marks for aligning the position of the reticle M are also formed at discrete positions in the Y direction in the blank portion 92.

Here, the mask M shown in FIG. 7 is a mask for forming a corresponding pattern on a display panel used in a liquid crystal display, an organic EL display, or the like. In this case, as the pattern formed in the photomask M, there are patterns for forming TFT electrodes and wiring for driving the pixels of the display screen of the display panel, patterns of pixels for the display screen of the display element, and color filters and Black matrix pattern etc. In the photomask M (pattern forming area A3), as shown in FIG. 7, a display screen area DPA for forming a pattern corresponding to the display screen of the display panel and a display screen area DPA arranged around the display screen area DPA for driving the display screen are formed A peripheral circuit area TAB of a pattern such as a circuit.

Although the size of the display screen area DPA on the reticle M corresponds to the size of the display portion of the display panel to be manufactured (diagonal length Le inches), the projection magnification of the projection optical system PL shown in FIGS. 2 and 4 At equal magnification (×1), the actual size (diagonal length Le) of the display screen area DPA on the mask M is the actual inch size of the display screen. In this embodiment, although the display screen area DPA is a rectangle of the long side Ld and the short side Lc, the length ratio (aspect ratio) of the long side Ld and the short side Lc, in a typical example, is Ld: Lc=16:9 Or Ld: Lc=2:1. The aspect ratio of 16:9 is the aspect ratio of the picture used in the so-called high image quality size (wide size). In addition, the aspect ratio of 2:1 is called the aspect ratio of the screen size of the display (scope), and it is the aspect ratio used for the ultra-high image quality size of 4K2K in the TV screen. For example, in the case of a display panel with an aspect ratio of 16:9 and a screen size of 50 inches (Le=127 cm), the long side Ld of the display screen area DPA on the mask M is about 110.7 cm and the short side Lc is about 62.3cm. In addition, in the case of the same screen size (50 inches) and an aspect ratio of 2:1, the long side Ld of the display screen area DPA is approximately 113.6 cm, and the short side Lc is approximately 56.8 cm.

As shown in FIG. 7, when one mask M for a display panel (including the display screen area DPA and the peripheral circuit area TAB) is formed on the outer peripheral surface of the cylindrical wheel 21, it is arranged to be the long side of the display screen area DPA The direction of Ld is preferably the θ direction (the circumferential direction of the cylindrical wheel 21). This is because it is not necessary to make the diameter φ of the cylindrical wheel 21 too small, and it is not necessary to make the length La of the cylindrical wheel 21 in the first axis AX1 direction too large. Here, an example of the size (Lb×L) of the mask M including the width dimension of the peripheral circuit area TAB is given. Although the width dimension of the peripheral circuit area TAB varies depending on the circuit configuration, the total of the Y-direction widths of the peripheral circuit area TAB located at both ends in the Y direction of the display screen area DPA in FIG. 7 is set as the display screen area 10% of the Y-direction length Lc of the DPA, and the total of the θ-direction widths of the peripheral circuit areas TAB located at both ends of the θ-direction of the display screen area DPA is set to 10% of the θ-direction length Ld of the display screen area DPA.

In this case, if a 50-inch display panel with an aspect ratio of 16:9 is used, the long side Lb of the mask M is 121.76 cm, and the short side L is 68.49 cm. Since the dimension of the white portion 92 in the θ direction is 0 or more, the diameter φ of the cylindrical wheel 21 is calculated to be 38.76 cm or more according to φ≧Lb/π. Therefore, in order to scan and expose the pattern of the 50-inch display panel with an aspect ratio of 16:9 to the substrate P, the length La of the direction φ 38.76 mm or more and the mask surface P1 parallel to the first axis AX1 must be greater than the short side Cylinder wheel 21 above L(68.49cm). At this time, the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.77. If the total width of the peripheral circuit area TAB in the θ direction is 20% of the length Ld in the θ direction of the display screen area DPA, the long side Lb of the mask M is 132.83 cm, the short side L is 68.49 cm, and the cylindrical wheel 21 has a diameter φ of 42.28 cm or more, and the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.62.

Under the same conditions, in the case of a 50-inch display panel with an aspect ratio of 2:1, the long side Lb of the mask M is 124.96 cm and the short side L is 62.48 cm. According to this, the diameter φ of the cylindrical wheel 21 is calculated to be 39.78 cm or more according to φ≧Lb/π. Therefore, in order to scan and expose the pattern of a 50-inch display panel with an aspect ratio of 2:1 to the substrate P, the length La of the diameter φ 39.78 cm or more and the mask surface P1 parallel to the first axis AX1 is the short side L (62.48cm) above the cylindrical wheel 21. At this time, the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.57. In addition, if the sum of the θ-direction widths of the peripheral circuit area TAB is 20% of the θ-direction length Ld of the display screen area DPA, the long side Lb of the mask M is 136.31 cm, the short side L is 62.48 cm, and the cylinder The diameter φ of the wheel 21 is 43.39 cm or more, and the ratio L/φ of the diameter φ to the short side L of the mask M is about 1.44.

As shown in FIG. 7, when the mask M formed with a pattern for a single display panel is arranged on the outer peripheral surface of the cylindrical wheel (mask holding cylinder) 21, the mask M in the Y direction orthogonal to the scanning exposure direction The relationship between the length L and the diameter φ of the mask surface P1 will fall within the range of 1.3≦L/φ≦3.8. However, if the arrangement of the mask M shown in FIG. 7 is rotated by 90° in FIG. 7 so that the long side Lb of the mask M is in the Y direction and the short side L is in the θ direction, the above relationship will be removed. For example, in the previous case of a 50-inch display panel with an aspect ratio of 16:9, if the width in the θ direction of the peripheral circuit area TAB is set to 10% of the length Ld of the display screen area DPA, due to the length of the mask M The side Lb is 121.76cm and the short side L is 68.49cm, so the minimum length L of the mask surface P1 parallel to the first axis AX1 is Lb (121.76cm), and the diameter φ of the cylindrical wheel 21 depends on φ≧ The calculation of L/π is 21.80 cm or more. Therefore, the ratio Lb/φ of the diameter φ to the length Lb of the direction in which the mask M is parallel to the first axis AX1 is approximately 5.59. Similarly, in the case of a 50-inch display panel with an aspect ratio of 2:1, since the long side Lb of the mask M is 124.96 cm and the short side L is 62.48 cm, the mask surface P1 is parallel to the first axis AX1 The minimum value Lb of the length L in the direction is (124.96 cm), and the diameter φ of the cylindrical wheel 21 is calculated as φ≧L/π to be 19.89 cm or more. Therefore, the ratio Lb/φ of the diameter φ to the length Lb of the direction in which the mask M is parallel to the first axis AX1 becomes approximately 6.28.

As described above, even if the size (Lb×L) of the photomask M is the same, the value of the ratio L/φ (or Lb/φ) greatly changes due to the direction of the long side and the short side. The large ratio L/φ (or Lb/φ) means that the diameter φ of the cylindrical wheel 21 is small and the curvature of the mask surface P1 is steep. Therefore, in order to maintain the faithfulness of the pattern transfer, the illumination area IR shown in FIG. 3 is bound to Or, the width of the scanning exposure direction Xs of the projection area PA is made narrower. Alternatively, it is necessary to double the length of the cylindrical wheel 21 in the direction parallel to the first axis AX1 to further increase the number of the plurality of projection optical systems PL (illumination optical systems IL) arranged in the Y direction. On the other hand, the ratio L/φ (or Lb/φ) is small. In one case, the length of the direction of the mask M on the cylindrical wheel 21 parallel to the first axis AX1 is small. For example, only 6 in FIG. 3 is used. One half of the projection areas PA1 to PA6, the other case is that the diameter φ of the cylindrical wheel 21 is too large, resulting in the θ-direction dimension of the remaining white portion 92 shown in FIGS. 6 and 7 being greater than the required level. For the above reasons, by making the cylindrical wheel (reticle holding cylinder) 21 outer dimension conditions to a relationship of 1.3≦L/φ≦3.8, the mask M formed with the pattern for the display panel can be efficiently implemented Precision exposure operations to improve productivity.

The examples shown in FIGS. 6 and 7 are examples in which the mask M having a pattern for one display panel is supported on the outer peripheral surface (mask surface P1) of the cylindrical wheel (mask holding cylinder) 21, but there are also A pattern for a plurality of display panels is formed on the mask surface P1. Next, a few such examples will be described with reference to FIGS. 8-10.

FIG. 8 is a development view showing a schematic configuration when three masks M1 of the same size are arranged in the circumferential direction (theta direction) of the cylindrical wheel 21 on the mask surface P1. FIG. 9 is an expanded view showing a schematic configuration when four masks M2 of the same size are arranged on the mask surface P1 in the circumferential direction (theta direction) of the cylindrical wheel 21. FIG. 10 shows that the mask M2 shown in FIG. 9 is rotated 90°, two masks M2 are arranged on the mask surface P1 in the Y direction, and then it is placed in the circumferential direction of the cylindrical wheel 21 (the θ direction) An expanded view of the schematic configuration when two groups are arranged. The examples shown in FIGS. 8 to 10 are based on the exposure of a plurality of (here, three or four) display panels of the same size on the substrate P while one of the cylinder wheels 21 is rotating, so it is called Multifaceted Mask M. In addition, as shown in FIG. 8, the entire area on the mask surface P1 on the substrate P to be scanned and exposed through the projection optical system PL is set as the mask M according to FIG. 7. In the mask M, it is to be used as a display panel The photomasks M1 (M2 in FIGS. 9 and 10) are arranged with a predetermined interval Sx in the scanning exposure direction (theta direction). Each mask M1 (M2 in FIGS. 9 and 10) includes the display screen area DPA with a diagonal length Le and the peripheral circuit area TAB surrounding it, as in FIG. 7.

Starting from the example shown in Fig. 8, the details are as follows. In FIG. 8, the largest rectangle is the outer peripheral mask surface P1 of the cylindrical wheel 21. The mask surface P1 has a rotation angle from 0° to 360° with the cutting line 94 as the origin in the θ direction, and has a length π φ in the θ direction and a length La in the Y direction parallel to the first axis AX1. The area shown by the dotted line inside the mask surface P1 corresponds to the mask M to be exposed to the entire area on the substrate P (the exposure area A7 in FIG. 3 ). The three masks M1 arranged in the θ direction in the mask M are arranged such that the long side direction of the display screen area DPA is the Y direction and the short side direction is the θ direction. In addition, each mask M1 is provided with an alignment mark (mask) for discretizing the position of the mask M (or M1) on the cylindrical wheel 21 at three locations in the Y direction within the interval Sx adjacent to the θ direction. Mark) 96. These mask marks 96 are detected through a mask alignment optical system (not shown) which is arranged on the outer circumferential surface (mask surface P1) at a predetermined position in the circumferential direction of the cylindrical wheel 21. The exposure device U3 measures the positional deviation of the entire cylindrical wheel 21 or the position of each mask M1 in the rotation direction (the θ direction) and the Y direction according to the position of each mask mark 96 detected by the mask alignment optical system Position offset.

Generally speaking, when forming elements of the display panel on the substrate P, a plurality of layers must be stacked. Therefore, the exposure device will align the pattern of the mask M (or M1) used to specify which position on the substrate P is exposed The mark (substrate mark) is transferred onto the substrate P together with the mask M (or M1). In FIG. 8, such substrate marks 96 a are formed at three ends of each mask M1 in the Y direction and separated in the θ direction. The area on the reticle (or substrate P) occupied by the substrate mark 96a has a width in the Y direction of about several mm. Therefore, the length L in the Y direction of the mask M to be exposed to the mask surface P1 on the substrate P is the dimension of the Y direction of each mask M1 and the substrate mark 96a secured on both sides of the Y direction of each mask M1 The total size of the area in the Y direction.

Further, if the length of the entire mask M on the mask surface P1 in the θ direction is Lb, and the total length of the θ-direction dimension of each mask M1 and the Y-direction dimension of each interval Sx is Px, Lb=3Px. As shown in FIG. 7 above, when a mask M corresponding to a single display panel is arranged, although it is preferable to provide a blank portion 92 of a predetermined length, as shown in FIG. 8, a plurality of masks M1 are arranged at an interval Sx in the θ direction At this time, the length of the white portion 92 in the θ direction can be made zero. That is, the length of each mask M1 in the θ direction depends on the size of the display panel, and the minimum size required for the interval Sx is also predetermined. Therefore, as long as the diameter φ of the cylindrical wheel 21 is set to satisfy φ=3Px/π Relationship. Conversely, if the range of the diameter φ of the cylindrical wheel 21 that can be mounted on the exposure device U3 has been roughly determined, it can be adjusted by changing (increasing) the size of the interval Sx.

Next, a specific size example of the mask M of FIG. 8 will be described. In FIG. 8, the diagonal length Le of the display screen area DPA of the mask M1 is 32 inches (81.28 cm), and the dimensions of the Y direction and the θ direction of the peripheral circuit area TAB are about 10% of the size of the display screen area DPA And, the size of the Y direction of the area where the substrate mark 96a is formed is set to 0.5 cm (total 1 cm on both sides). If it is a display panel with an aspect ratio of 16:9, the short side dimension of the reticle M1 is 48.83cm and the long side dimension is 77.93cm. If it is a display panel with an aspect ratio of 2:1, the short side dimension of the reticle M1 is 43.83cm, the long side is 79.97cm. If the size of the white part 92 is set to zero to satisfy Lb=π φ=3Px, and the three masks M1 and the three intervals Sx are arranged in the θ direction, if the length of the θ direction of the mask M1 is Lg, the interval Sx can be obtained by Sx=(Lb-3Lg)/3.

Therefore, if any one of the mask M1 for a display panel with an aspect ratio of 16:9 and the mask M1 for a display panel with an aspect ratio of 2:1 can be arranged in the light of the cylindrical wheel 21 of the same diameter For the cover P1, the diameter φ of the cylindrical wheel 21 may be about 43 cm. In this case, the display panel with an aspect ratio of 16:9 sets the interval Sx between the masks M1 to 1.196 cm, and the display panel with an aspect ratio of 2:1 sets the interval Sx between the masks M1 to 5.045 cm.

Since the Y-direction length L of the mask M on the mask surface P1 is the combination of the Y-direction size of the mask M1 and the Y-direction size (1 cm) of the formation area of the substrate mark 96a, the display panel with an aspect ratio of 16:9 The mask M for display panel with L=78.93cm and the aspect ratio of 2:1 is L=80.97cm. Therefore, the ratio of the diameter φ (43 cm) of the cylindrical wheel 21 to the length L in the Y direction of the mask M is L/φ=1.84 and the length and width of the cylindrical wheel 21 for a display panel with an aspect ratio of 16:9 The cylindrical wheel 21 for the display panel with a ratio of 2:1 is L/φ=1.88. In any case, the ratio L/φ falls within the range of 1.3 to 3.8.

In addition, when exposing the pattern of the display panel with an aspect ratio of 16:9 to the substrate P, and when exposing the pattern of the display panel with an aspect ratio of 2:1 to the substrate P, if it is necessary to expose the pattern on the substrate P When the dimension of the interval θ in the θ direction is controlled to the minimum required, the diameter φ of the cylindrical wheel 21 must naturally be changed. For example, when the interval Sx is 2 cm, the diameter φ of the cylindrical wheel 21 forming the mask M1 for the display panel with an aspect ratio of 16:9 is φ≧43.77 cm according to the relationship of π φ=3(Lg+Sx) . On the other hand, the diameter φ of the cylindrical wheel 21 forming the display panel mask M1 with an aspect ratio of 2:1 is φ≧40.1 cm. In this case, the cylindrical wheel 21 for a display panel with an aspect ratio of 16:9 has a ratio L/φ=1.80, and the cylindrical wheel 21 for a display panel with an aspect ratio of 2:1 has a ratio L/φ=2.02. It falls within the range of 1.3~3.8.

In addition, in order to cope with such a change in the diameter φ of the cylindrical wheel 21 (mask M) mounted on the exposure device U3, the exposure device U3 is provided with a position in the Z direction of the first axis AX1 of the cylindrical wheel 21 A mechanism that shifts the difference of 1/2 of the diameter φ. In the above example, since the difference in the diameter φ is 3.67 cm, the first axis AX1 (axis SF) of the cylindrical wheel 21 is supported by being offset by about 1.835 cm in the Z direction. In addition, when the deviation of the first axis AX1 of the cylindrical wheel 21 in the Z direction is large, the cylindrical lens 54 shown in FIG. 4 must be changed to have a convex cylindrical surface that satisfies the lighting conditions shown in FIG. 5 For the curvature, the angle α° of the first reflecting surface (plane mirror) P3 of the first deflection member 70 is adjusted so that the polarization beam splitter PBS and the 1/4 wavelength plate 41 as a whole are slightly tilted in the XZ plane.

As described above, as shown in FIG. 8, in the mask M (including three masks M1) formed on the cylindrical wheel 21, the pattern for the display panel (mask M1) transferred to the substrate P is in the θ direction (Scanning exposure direction) A plurality of substrate marks 96a are provided. Therefore, when the plurality of substrate marks 96a and the display panel pattern (mask M1) are sequentially transferred onto the substrate P by the exposure device U3, various problems during exposure can be confirmed. For example, the substrate mark 96a transferred to the substrate P can be used to specify the position of the defect (such as adhesion of debris) generated on the substrate P, or to measure the patterning error of the photomask, the focus error, the overlap error during overlap exposure, etc. Various offset errors. The measured offset error is added to the overall management of the mask, the position management of each mask M1 on the cylindrical mask 21, and the pattern of each display panel transferred to the substrate P (mask M1 ) Location management (revision).

9 shows a mask M2 for a display panel having an aspect ratio of 2:1, for example, with the Y direction as the long side of the display screen area DPA, four masks arranged on the cylindrical wheel 21 are arranged in the θ direction Example on the surface P1. A space Sx is provided on the side (long side) in the θ direction of each mask M2, and the mask mark 96 and the substrate mark 96a are also provided in the same manner as in the previous FIG. 8. In this case, the total length π φ(=Lb) of the mask surface P1 in the circumferential direction (θ direction) is π φ=4Px=4(Lg+Sx). Here, the screen size of the display screen area DPA is 24 inches (Le=60.96 cm), the total width of the θ direction of the peripheral circuit area TAB is 10% of the length of the θ direction of the display screen area DPA, and the Y of the peripheral circuit area TAB The total width in the direction is 20% of the length in the Y direction of the display screen area DPA, and the total width in the Y direction of the formation area of the substrate marks 96a disposed at both ends in the Y direction of the mask M2 is 1 cm.

In this case, since the size of the display screen area DPA is 54.52 cm on the long side and 27.26 cm on the short side, the total length L in the Y direction of the exposure mask M on the mask surface P1 includes the mask M2 and the substrate mark 96a. The formation area is L=66.43cm. In addition, the length θ of the mask M2 on the mask surface P1 in the θ direction Lg=29.99 cm. Therefore, if the interval Sx is set to 1 cm, the diameter φ of the mask M (cylindrical wheel 21) is π φ≧4Px, and Above 39.46cm. Therefore, as shown in FIG. 9, when the four sides of the mask M2 for a display panel with an aspect ratio of 2:1 are arranged on the cylindrical wheel 21, the ratio L/φ is 1.67, in the range of 1.3 to 3.8 Inside.

FIG. 10 is an example in which the mask M2 shown in FIG. 9 is rotated by 90°, the long side is arranged in the θ direction, and a total of 4 in the θ direction and 2 in the Y direction are arranged on the mask surface P1. In addition, here, it is provided between the two masks M arranged in the Y direction, and the formation area of the substrate mark 96a is provided. Therefore, if the total width in the Y direction of the formation area of the substrate mark 96a is 2 cm, the total length (short side) L in the Y direction of the mask M formed on the mask surface P1 is 61.98 cm, and the θ direction of the mask M The full length (long side) π φ is 132.86 cm, the diameter φ of the mask M (cylindrical mask 21) is 42.29 cm or more, and the ratio L/φ is 1.47.

When the four masks M2 are arranged as shown in FIG. 9 or FIG. 10, if the interval Sx is adjusted, the diameter φ of the cylindrical wheel 21 and the dimension La in the Y direction of the mask surface P1 can be made constant. In the case of FIGS. 9 and 10, the length L of the mask M in the Y direction is larger is L=66.43 cm in the case of FIG. 9, and the diameter φ of the cylindrical wheel 21 (mask M) is larger in FIG. 10. In the case of φ≧42.29cm. Therefore, if a cylindrical wheel 21 with a dimension La of La≧66.43cm and a diameter of φ≧42.3cm in the Y direction of the outer peripheral surface (mask surface P1) is used, regardless of the arrangement of FIGS. 9 and 10, the mask M2 can take 4 sides. In this case, the ratio L/φ is also 1.57, which is in the range of 1.3 to 3.8.

As shown in FIGS. 8 to 10, on the mask surface P1, it is possible to arrange mask patterns (masks M, M1, M2) for display elements in various arrangement rules. On the other hand, by making the length L of the direction (Y direction) of the mask surface P1 (outer peripheral surface) of the cylindrical wheel (reticle holding cylinder) 21 and the scanning exposure direction (θ direction) orthogonal to the cylindrical wheel 21 The relationship of the diameter φ satisfies the relationship of 1.3≦L/φ≦3.8, that is, as shown in FIGS. 8 to 10, even when a plurality of mask patterns (masks M1, M2) of display panels of various sizes are arranged Also, the mask pattern can be arranged in a state where the gap (interval Sx) is reduced.

In addition, by making the cylindrical wheel 21 satisfy the relationship of 1.3≦L/φ≦3.8, it is possible to suppress the increase in the size of the device while suppressing the increase in the number of the illumination optical system IL and the projection optical system PL. That is, the cylindrical wheel 21 becomes elongated, and the increase in the number of the illumination optical system IL and the projection optical system PL can be suppressed. Also, since the diameter φ of the cylindrical wheel 21 becomes larger, it is possible to suppress the size of the device in the Z direction from becoming larger.

Here, as shown in FIG. 7, when the one-face mask M for a display panel with an aspect ratio of 2:1 is formed on the entire outer peripheral surface (mask face P1) of the cylindrical wheel 21, consider FIG. 6 7. The dimension of the white portion 92 in FIG. 7 in the θ direction is zero, and the dimension La of the mask surface P1 in the Y direction (the first axis AX1 direction) is La=L. Also, as previously described, the peripheral circuit area TAB disposed around the screen display area DPA may occupy about 20% of the screen display area DPA. However, the size ratio of the peripheral circuit area TAB varies depending on the actual pattern specifications and design, which part of the circuit display area DPA should be placed as the terminal portion of the circuit. Therefore, although it cannot be specified correctly, it is assumed that the total width of the peripheral circuit area TAB adjacent to the short side of the screen display area DPA increases in the direction in which the aspect ratio of the mask M increases, and the screen display area DPA is assumed 20% of the long side Ld. In addition, the total width of the peripheral circuit area TAB adjacent to the long side of the screen display area DPA is assumed to be about 0 to 10% of the short side Lc of the screen display area DPA. Under this assumption, when the screen display area DPA is a 50-inch display panel with an aspect ratio of 2:1, the long side Ld of the screen display area DPA is 113.59 cm and the short side Lc is 56.8 cm. Therefore, the length Lb (=π φ) of the mask M in FIG. 7 is 136.31 cm, the diameter φ of the cylindrical wheel 21 (mask M) is 43.39 cm, and the length L (=La) in the Y direction is 56.8~ 62.48cm, the ratio L/φ of length L to diameter φ is 1.30~1.44. As described above, when the entire mask for a display panel having a large aspect ratio is formed on one surface over the entire outer peripheral surface (mask surface P1) of the cylindrical wheel 21, the ratio L/φ becomes the minimum value 1.3. In addition, when the aspect ratio of the screen display area DPA is 2:1, and the mask M is only 20% larger than the width of the peripheral circuit area TAB in the longitudinal direction, as shown in FIG. The aspect ratio (Lb/L) becomes 2.4, and according to Lb=π φ, the derived ratio is L/φ=π/2.4≒1.30.

Also, as in the case of a printing press, when the mask M in FIG. 7 is rotated by 90° and arranged substantially on the entire surface of the mask surface P1 of the cylindrical wheel 21, as described earlier, the ratio L/φ becomes excessively large. As described above, in the case where the aspect ratio of the screen display area DPA is 2:1, the mask M on one side is only 20% larger including the width of the peripheral circuit area TAB in the longitudinal direction, and the remaining white portion 92 When the dimension in the θ direction is zero, L/Lb(π φ)=2.4/1, and the ratio L/φ is 7.54. In this case, for the 50-inch display panel exemplified as the one-sided photomask M, the length L in the Y direction is 136.31 cm, the length Lb in the θ direction (π φ) is 56.8 cm, and the cylindrical wheel The diameter φ of 21 (mask M) is 18.1cm. As described above, when the longitudinal direction of the mask M is set to the θ direction and when it is set to the Y direction, the ratio L/φ greatly changes.

The projection optics PL of the exposure device U3, when the diameter φ of the cylindrical wheel 21 changes significantly, especially when the diameter φ becomes small, the deformation error caused by the projection and the change in the projection image surface caused by the arc will Becomes larger, so it is not easy to expose a good projection image onto the substrate P. In this case, as shown in FIG. 11, it is preferable to arrange the two masks M2 for the display panel DPA of the screen display area DPA having the aspect ratio of 2:1 as the Y direction in the θ direction.

In FIG. 11, each of the two masks M2 includes a screen display area DPA with an aspect ratio of 2:1 and peripheral circuit areas TAB disposed on both sides of the screen display area DPA in the Y direction. The total Y-direction width of the peripheral circuit area TAB is set to 20% of the long-side dimension Ld of the screen display area DPA, and a space Sx is provided on the right adjacent to the mask M2. When it is assumed that the substrate mark 96a and the mask mark 96 are not arranged around the mask M2, the dimension L in the Y direction of the entire mask M (mask face P1) including two masks M2 and the interval Sx is L=1.2‧Ld , Θ direction dimension π φ(Lb) is π φ=2(Lc+Sx). When the aspect ratio Asp of the screen display area DPA is set to Asp=Ld/Lc, the ratio L/φ is displayed as follows.

L/φ=0.6‧π‧Asp‧Lc/(Lc+Sx)

Here, if the interval Sx is set to zero, the ratio L/φ becomes L/φ=0.6‧π•Asp, and when two masks M2 for display panels with an aspect ratio of 2:1 are arranged in the direction of FIG. 11, The ratio L/φ of the diameter φ of the cylindrical wheel 21 (mask surface P1) to the length L (=La) in the direction of the first axis AX1 is 3.77 (about 3.8). In this case, if the screen display area DPA (2:1) is 50 inches, the diameter φ is 36.16 cm and the length L (La) is 136.31 cm. Similarly, when the mask M2 shown in FIG. 11 is used as a display panel with an aspect ratio of 16:9, if the interval Sx is set to zero, the ratio L/φ is due to the relationship of L/φ=0.6‧π‧Asp Becomes 3.35. In this case, if the screen display area DPA (16:9) is 50 inches, the diameter φ is 39.64 cm and the length L (La) is 132.83 cm.

As described above, it is arranged such that the short side direction of the screen display area DPA faces the circumferential direction (theta direction) of the cylindrical wheel 21 and the long side direction faces the direction (the Y direction) of the first axis AX1 of the cylindrical wheel 21 In the case of the mask M, by arranging two or more identical masks M2 in the θ direction, the ratio L/φ is 3.8 or less. In addition, when n masks M2 shown in FIG. 11 are arranged in the θ direction under the same conditions, the previous relational expression of the ratio L/φ is displayed as follows.

L/φ=1.2‧π‧Asp‧Lc/n(Lc+Sx)

According to this relationship, the arrangement of the mask M2 for the display panel to be manufactured on the cylindrical wheel 21, the required interval Sx, etc. can be set to satisfy 1.3≦L/φ≦3.8.

In addition, the mask surface P1 can be configured by arranging the masks M1 and M2 of the mask pattern for the display panel element as shown in the previous FIG. 8 or the four as shown in FIG. 9 to be arranged in a ratio L/φ is less than 3.8. In this case, what value the ratio L/φ will be can be obtained from the relational expression when the masks M1 and M2 on the long side in the Y direction are arranged n in the θ direction. As the width of the peripheral circuit area TAB around the display screen area DPA is different, the vertical and horizontal dimensions of the photomasks M1 and M2 will also change. Therefore, due to the two sides (or one side) of the long side direction of the display screen area DPA The magnification of the long-side dimension of the masks M1, M2 enlarged in the peripheral circuit area TAB is set to e1, the mask enlarged by the peripheral circuit area TAB on both sides (or one side) in the short-side direction of the display screen area DPA The magnification of the short-side dimension of M1 and M2 is set to e2.

Therefore, when arranged in such a way that the dimension La in the Y direction of the mask surface P1 matches the dimension in the longitudinal direction of the masks M1 and M2, the length L in the Y direction of the mask area on the mask surface P1 becomes L=La= e1‧Ld. Similarly, the θ-direction length π φ(Lb) of the mask area on the mask surface P1 becomes π φ=n(e2‧Lc+Sx), and the ratio L/φ is expressed by the following relationship.

L/φ=e1‧π‧Asp‧Lc/n(e2‧Lc+Sx)

In this relation, if it is the mask M2 shown in FIG. 11, n=2, e1=1.2, and e2=1.0.

For example, when the aspect ratio of the display screen area DPA of the mask M2 for a display panel element is set to 16:9 (Asp=1.778), if the mask M2 is arranged in the θ direction on three sides side by side (n=3) , When the interval Sx is zero, the ratio L/φ becomes L/φ=e1‧π‧Asp/n‧e2, even if the magnification e1 is set to 1.2 and the magnification e2 is set to 1.0, the ratio L/φ is also 2.23 .

Further, as shown in the previous FIG. 10, if the aspect ratio of the entire four-sided mask area of the mask M2 (24 inches) is arranged in 2 rows and 2 columns, the long side direction of the display screen area DPA faces the θ direction If the aspect ratio of the photomask M (50 inches) on one side is approximately the same, the size can be the same size only by differentiating the size of the terminal portion of the peripheral circuit area TAB or the interval Sx The cylinder wheel 21 responds.

As explained above, if the aspect ratio of the display screen area DPA of the display panel is 16:9 and 2:1, etc. close to 2:1, the masks M, M1 and M2 used for the display panel are effective Is arranged on the outer peripheral surface of the cylindrical wheel 21 so that the relationship between the length L and the diameter φ of the cylindrical wheel (cylindrical mask) 21 in the direction (Y direction) orthogonal to the scanning exposure direction (θ direction) satisfies 1.3 ≦L/φ≦3.8 is better. In addition, when the aspect ratio of a single mask M, M1, M2 is close to 2:1, when arranging a plurality of these masks in a multi-faced manner, it is best to make the entire mask area on the mask face P1 occupied by multiple faces The aspect ratio (L:Lb) is close to 1:1. In addition, the interval Sx (or the margin portion 92) is preferably fixed.

Also, the relationship between the diameter φ of the outer peripheral surface (mask surface P1) of the cylindrical wheel 21 and the total length L (La) in the first axis AX1 direction of the mask pattern formed on the mask surface P1 satisfies 1.3≦L/ φ≦3.8 is better. Further, if 1.3≦L/φ≦2.6, the above effects can be obtained very well. For example, when the long side direction of the photomask M2 shown in FIG. 11 is the θ direction, when the photomask M2 is rotated by 90° and two spaces are arranged in the Y direction without spacing, then L/φ≒2.6 . In this case, the length θ φ(Lb) of one mask M2 in the θ direction is π φ=e1‧Ld, and the total length L of the two masks M2 arranged in the Y direction is L=2‧e2‧Lc. Therefore, since Asp=Ld/Lc, the ratio L/φ becomes L/φ=2π‧e2/e1‧Asp. If e1=1.2, e2=1.0, Asp=2/1, L/φ=π/ 1.2≒2.6.

In addition, it is preferable that the exposure device U3 can make the mask M (M1, M2) replaceable. By making the photomask replaceable, it is possible to project and expose the photomask pattern for display panels of various sizes or electronic circuit substrates onto the substrate P. In addition, even if the number of masks (M, M1, M2, etc.) formed on the mask surface P1 of the cylindrical wheel 21 is varied, there is no need to make the gap (interval Sx) generated between the masks too large. That is, it is possible to suppress a decrease in the ratio of the effective mask area to the entire area of the mask surface P1 (mask utilization).

Furthermore, it is preferable that the mask M can be formed such that the diameter φ of the mask surface P1 of the cylindrical wheel 21 and the length L of the mask region in the direction (Y direction) orthogonal to the scanning exposure direction are substantially the same. (M1, M2) can be replaced. In this way, only the mask M (M1, M2) needs to be replaced without adjusting other parts such as the projection optical system PL and the illumination optical system IL on the exposure device U3 side, or the distance between the substrate P and the mask surface P1, or other adjustments, or It only needs a slight adjustment amount to complete, and after the photomask is replaced, the patterns of various components can be transferred with the same image quality.

In addition, in the above-mentioned embodiment, the component masks (M1, M2) for changing the number of taken faces and the number of arrangement directions of the cylindrical wheel 21 with a constant diameter φ are arranged on the mask face P1. Or, a case where elements of various numbers of surfaces with different diameters φ of the cylindrical wheel 21 are arranged on the mask surface P1. However, in any case, the shape of the cylindrical mask surface P1 can satisfy the relationship of 1.3≦L/φ≦3.8, so that a plurality of masks can be arranged on the mask surface P1 with a small gap pattern. In this way, the pattern of the device (display panel) can be transferred to the substrate P with good efficiency. In addition, by making the cylindrical mask of the cylindrical wheel 21 satisfy the relationship of 1.3≦L/φ≦3.8, it is possible to arrange the element patterns of various sizes with good efficiency while reducing the gap between the plurality of element patterns, and Reduce the change of the diameter φ of the cylindrical mask.

As shown in FIGS. 8 to 11, the number of faces of the photomasks M1 and M2 can be 2, 3, 4 or more depending on the size of the display panel (component) manufactured. If the number of faces of the masks M1 and M2 is increased to 3 or 4 faces, the size of the gap (interval Sx) can be further reduced.

In addition, the cylindrical wheel 21 can satisfy the width of the scanning exposure direction (the θ direction) of the illumination area IR or the projection area PA according to the relative cylinder diameter (diameter φ) by satisfying 1.3≦L/φ≦3.8, so-called exposure slit Wide optimization (increase). Hereinafter, the relationship between the diameter φ of the mask surface P1 of the cylindrical wheel 21 and the width of the exposure slit in the scanning exposure direction will be described using FIG. 12.

FIG. 12 is a graph simulating the relationship between the diameter φ of the cylindrical wheel 21 (mask surface P1) and the width D of the exposure slit while changing the amount of defocus. In FIG. 12, the vertical axis represents the exposure slit width D [mm], and this represents the width in the θ direction (X direction) of the projection area PA (FIG. 3) formed on the substrate P. The vertical axis represents the diameter φ [mm] of the cylindrical wheel 21 (mask surface P1). The defocus amount is defined by the numerical aperture number NA of the projection optical system PL image side (substrate P side) of the exposure device U3, the wavelength λ of the exposure illumination light, and the process constant k (k≦1) The depth of focus is determined by DOF. Here, the simulation is performed for two cases in which the deviation amount (defocus amount) between the best focal plane of the projected image and the focus direction of the surface of the substrate P is 25 μm and 50 μm.

Here, in the simulation of FIG. 12, the number of openings NA of the projection optical system PL is set to 0.0875, the wavelength λ of the illumination light is set to 365 nm of the i-line of the mercury lamp, and the process constant k is set to about 0.5. Therefore, according to the focus Depth DOF=k‧λ/NA ² , the width is about 50μm (about -25μm~+25μm). In addition, the resolving power under this condition was 2.5 μmL/S. When the 25μm defocus shown by the broken line in FIG. 12 refers to the state where the focus deviation of about 1/2 of the depth of focus DOF is generated within the exposure slit width D, the 50μm defocus shown by the solid line refers to the state In the exposure slit width D, there is a state in which the focus depth DOF is out of focus. That is, the graph at the time of defocusing at 25 μm shown by the broken line shows that the width of the focal depth DOF is 1/2 (width 25 μm), which is allowed as an error due to the bending of the mask surface P1 of the cylindrical wheel 21 The relationship between the diameter φ at the time and the width D of the exposure slit is shown by the solid line at 50 μm when defocused. It shows how far the depth of focus DOF is, as the curvature of the mask surface P1 of the cylindrical wheel 21 The relationship between the diameter φ and the exposure slit width D when the error is allowed.

In FIG. 12, the allowable defocus amount (set to △Z) when the diameter φ of the cylindrical wheel 21 is changed in the range of 100 mm to 1000 mm, and the exposure slit width D of 25 μm and 50 μm are calculated by the following formula The exposure slit width D.

D=2‧[(φ/2) ² -(φ/2-△Z) ² ] ^0.5

According to this simulation, for example, when the diameter φ is 500 mm, the maximum value of the exposure slit width D when the defocus amount ΔZ is allowed to 25 μm is about 7.1 mm, and the exposure slit when the defocus amount ΔZ is allowed to be 50 μm The maximum value of the width D is about 10.0mm.

As shown in FIG. 12, the larger the diameter φ of the cylindrical wheel 21, the larger the exposure slit width D that meets the allowable defocus amount. When the aspect ratio of the display screen area DPA is 2:1, and the peripheral circuit area TAB is provided only in the longitudinal direction of the display screen area DPA, as in the case of the mask M2 of FIG. 11, if the blank portion 92( At intervals Sx), when only one surface of the mask M2 is formed on the entire circumference of the mask surface P1 of the cylindrical wheel 21, the longitudinal direction of the mask M2 is regarded as the circumferential direction of the cylindrical wheel 21 (θ Direction), or the direction of the first axis AX1 (Y direction), the ratio L/φ changes greatly. When the long side direction of the mask M2 is set to the Y direction as shown in FIG. 11, the length Lc (short side) of the θ direction of one surface of the mask M2 is equal to the total circumference π φ of the outer circumferential surface of the cylindrical wheel 21 Becomes φ=Lc/π. At this time, the length L of the first axis AX1 direction (Y direction) of the photomask M2 on the cylindrical wheel 21 is L=1.2‧Ld, as in the case of FIG. 11. Since the aspect ratio is 2:1, and Ld=2Lc, the ratio L/φ at this time is L/φ=2.4‧π≒7.5. On the other hand, when the short side direction of the mask M2 is set to the Y direction, the total circumference of the θ direction of the one surface of the mask M2 is π φ is 1.2 Ld, and the direction of the mask M2 on the cylindrical wheel 21 The length L becomes Lc. Therefore, the ratio L/φ at this time becomes L/φ=π/2.4≒1.3.

If the length L in the Y direction of the photomask is set within the total size range of the Y direction of each projection area PA1 to PA6 (FIG. 3) of the projection optical system PL of the exposure device U3, and the length L is constant, the ratio L/φ A change of approximately 6 times from 1.3 to 7.5 represents a change of approximately 6 times the diameter φ of the cylindrical wheel 21. The diameter φ changes by approximately 6 times, which corresponds to, for example, the diameter φ= changes from 150 mm to 900 mm in FIG. 12. In this case, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm is changed from about 3.9 mm at φ150 mm to about 9.5 mm at φ900 mm. Therefore, when the length L of the reticle in the Y direction is fixed, when changing from a cylindrical reticle with a diameter of 900 mm to a cylindrical reticle with a diameter of 150 mm, it means that the exposure slit width D is reduced to about 40%. The same is true when the allowable defocus amount ΔZ is set to 50 μm.

Therefore, when the ratio L/φ is in the range of 1.3 to 7.5, and the exposure of the projected image is kept constant, the exposure amount given to the substrate P is simply reduced to 40%. In order for the exposure amount given to the substrate P to reach a suitable positive value (100%), the movement speed of the substrate P when exposing the projection area PA with the exposure slit width D set to 9.5 mm needs to be moved at a speed of about 40% P. That is, the transfer speed of the substrate P itself must be reduced to about 40%, so that the throughput will be reduced to less than half. When using the projection area PA with the exposure slit width D set to 3.9 mm, in order to avoid reducing the conveyance speed of the substrate P, it may be considered to increase the brightness of the projected image in the projection area PA, that is, to increase the illuminance of the illumination beam EL1. However, in this case, the illuminance of the illumination beam EL1 irradiated to the mask surface P1 needs to be increased by about 2.5 times relative to the illuminance when the exposure slit width D is 9.5 mm.

On the other hand, when the two sides of the photomask M2 as shown in FIG. 11 are used, the ratio L/φ can be reduced to a range (1.3 to 3.8) below about 3.8 (1.2‧π). When the length L of the reticle in the Y direction is fixed, the diameter φ of the cylindrical reticle (cylindrical wheel 21) changes by about 3 times. For example, it is only necessary to consider φ=900mm~300mm. According to the simulation in FIG. 12, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm when the diameter φ is 300 mm is about 5.5 mm. Therefore, with respect to the case where the exposure slit width D is about 9.5 mm, the transfer speed of the substrate P is reduced to only about 60%. As described above, the aspect ratio (L: π φ) of the mask area formed on the mask surface P1 of the cylindrical wheel 21 is limited to the ratio L/φ of about 1.3 to about 3.8, that is, the exposure slit width can be suppressed Change of D.

Similarly, when the mask M2 of FIG. 11 is arranged in the θ direction without spacing Sx as shown in FIG. 3, L/φ=0.4π‧Asp, and the diameter φ of the cylindrical wheel 21 is, for example, It may vary from about 1.8 times of 500mm to 900mm. The exposure slit width D at a defocus amount of 25 μm will be reduced from about 9.5 mm to about 7.1 mm when the diameter φ is 900 mm, which corresponds to a productivity reduction of about 75%. However, it is improved from the previous case where the productivity drops to less than half. Further, when the mask M2 of FIG. 11 is arranged in the θ direction without spacing Sx as shown in FIG. 9, L/φ=0.3π‧Asp, the diameter φ of the cylindrical wheel 21 may be 700 mm, for example The range of about 1.3 times of ~900mm changes. The exposure slit width D at a defocus amount of 25 μm will be reduced from about 9.5 mm to about 8.4 mm when the diameter φ is 900 mm. This is equivalent to a reduction in productivity of about 88%, but it has been greatly improved from the case where the productivity of the previous example drops to less than half, and exposure can be carried out substantially without loss. In addition, if the exposure slit width D is reduced by 75% or 88%, the illuminance of the illumination beam EL1 can be easily increased by means of increasing the luminous intensity of the light source 31, or increasing the number of light sources, etc. Reduced productivity. In addition, the size of the mask area can be seen as the productivity becomes constant as it approaches a certain value. That is, the screen size (diagonal length Le) of the visual display image area DPA is distinguished between the multi-facet of the light mask M, the mask M1 or the mask M2, and the size of the mask area (L×π φ) A certain cylindrical wheel 21 (with a constant diameter φ) maintains a certain productivity.

As described above, although the range of the ratio L/φ is set at about 1.3 to about 3.8, this is because, as shown in FIG. 11, the lengthwise direction of a mask M2 for a display panel with an aspect ratio of 2:1 is assumed The size, including the width of the peripheral circuit area TAB, is increased by 20% relative to the longitudinal dimension Ld of the display screen area DPA (in the case of 1.2 times). Therefore, if the size of the mask in the longitudinal direction is enlarged by e1 relative to the length of the display screen area DPA, the ratio L/φ, that is, Asp=Ld/Lc, is expressed in the following range.

π/(e1‧Asp)≦L/φ≦e1‧π

By using the cylindrical wheel 21 (cylindrical mask) that satisfies this condition, the exposure device U3 of this embodiment can suppress projection distortion caused by projection errors caused by the cylindrical surface, or Simultaneously with the change of the projection image surface (focus deviation) caused by the arc, a plurality of mask patterns for the display panel (element) are arranged and transferred to the substrate P while reducing the gap.

When the arrangement examples of the masks M, M1, M2, and the like formed on the cylindrical mask (cylindrical wheel 21) in the above-described embodiment are aggregated, it becomes as shown in FIGS. 13 and 14. Fig. 13 shows the case where the mask M taking the θ direction as the long-side direction takes one side, as in the previous FIG. 7, and FIG. 14 shows the Y side as the long-side direction. The case where two masks M2 are arranged in the θ direction and two sides are taken. 13 is the same as FIG. 7, in which the mask M for the display panel with the diagonal length Le (inch) of the display screen area DPA is arranged with the long side in the θ direction. In this case, when the ratio of the long-side dimension Ld to the short-side dimension Lc (Ld/Lc) of the display screen area DPA is set to the aspect ratio Asp, the entire mask M including the peripheral circuit area TAB around the display screen area DPA When it is formed on the outer peripheral surface of the cylindrical wheel 21 (mask surface P1) without any white space, the length π φ of the mask M in the θ direction is π φ=e1‧Ld=e1‧Asp‧Lc, the length in the Y direction L is L=e2‧Lc. As described previously, e1 represents the total width of the peripheral circuit area TAB attached to both sides of one side of the display screen area DPA in the long-side direction, and the long-side direction of the mask M relative to the long-side direction of the display screen area DPA How much magnification to enlarge. Similarly, e2 represents the total width (Ta in FIG. 13) of the peripheral circuit area TAB attached to both sides or one side of the short side direction of the display screen area DPA, and the short side direction of the mask M relative to the display screen area DPA The degree of magnification for the short side. According to the above description, the minimum required size of the outer peripheral surface (mask surface P1) of the cylindrical wheel 21 is π φ×L. At this time, the ratio L/φ of the length L of the mask M to the diameter φ is expressed by the following formula .

L/φ=π‧e2/e1‧Asp

Set the aspect ratio (π φ: L) of a mask M as large as possible, and set the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA to zero (e2=1), magnification When e1 is set to 1.2 (20% increase), the ratio L/φ becomes π/1.2‧Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L/φ is π/2.4≒1.3, and when the aspect ratio Asp is 1.778 (16/9), the ratio L/φ is π/2.134≒1.47 .

Fig. 14 is the same as Fig. 11 in the case where two masks M2 with the long side of the display screen area DPA as the Y direction are arranged in two directions in the θ direction, aspect ratio Asp, magnifications e1 and e2 The definition is the same as in the case of FIG. 13. The size of one mask M2 including the peripheral circuit area TAB around the display screen area DPA is L×Lg, and the two masks M2 are juxtaposed with an interval Sx in the θ direction. Therefore, when the entire mask including two masks M2 and two spaces Sx is formed on the outer peripheral surface of the cylindrical wheel 21 (mask surface P1) without any white space, the θ of the entire mask The direction length π φ is π φ=2(Lg+Sx), and the length L in the Y direction is L=e1‧Ld. Therefore, the ratio L/φ at this time is expressed by the following formula.

L/φ=π‧e1‧Ld/2(Lg+Sx)

At this time, when the magnification e1 is set to 1.2 (20% increase), the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is set to zero (e2=1), and the interval Sx is also set to zero At this time, the ratio L/φ is 0.6π‧Asp due to the relationship of Lg=e2‧Lc and Ld=Asp‧Lc. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L/φ is about 3.8, and when the aspect ratio Asp is 1.778 (16/9), the ratio L/φ is about 3.4.

As described above, the size (inches) of the display panel (element) arranged on the cylindrical mask surface P1, the aspect ratio Asp of the display screen area DPA, and the width of the peripheral circuit area TAB, etc., if determined, That is to say, according to this, a simple cylindrical mask (cylinder wheel 21) with a better ratio L/φ suitable for the device specification of the exposure device U3 can be easily produced.

Furthermore, a specific example will be described using FIGS. 15 to 18. First, as shown in FIG. 7 or FIG. 13 above, the case where the mask M of the display screen area DPA is set to the θ direction on the mask surface P1 of the cylindrical wheel 21 is taken as a reference for comparison . Here, in a specific example, the projection optical system PL of the exposure device U3 is provided to project the mask pattern onto the substrate P at an equal magnification. Therefore, on the mask surface P1 of the cylindrical wheel 21, a mask pattern with a larger size than the actual display panel is formed. In addition, the display screen area DPA of the display panel is a 60-inch screen with high image quality (aspect ratio of 16:9). In this case, the short side dimension Lc of the display screen area DPA is 74.7 cm, the long side dimension Ld is 132.8 cm, and the diagonal length Le is 152.4 cm. In addition, the overall size of the mask M including the peripheral circuit area TAB is set to a magnification factor e1 of the long side direction of the display screen area DPA of 1.2 (20%), and a magnification factor e2 of the short side direction of 1.15 (15% increase), and the long side direction (θ direction) is e1‧Ld=159.4cm, and the short side direction (Y direction) is e2‧Lc=85.9cm. In addition, the length of the white part 92 shown in FIG. 6 or 7 in the θ direction is 5.0 cm. Since the mask M is provided on the mask surface P1 of the cylindrical wheel 21 under the above conditions, the θ direction dimension π φ of the mask surface P1 becomes 164.4 cm. Therefore, since the diameter φ of the cylindrical wheel 21 must be 52.33 cm or more, it is set to, for example, 52.5 cm. In addition, although the Y-direction length of the entire mask M of the above conditions is set to 85.9 cm, the projection area PA1 to PA6 of each projection optical system PL1 to PL6 of the exposure device U3 is used as a reference to the mask M. The exposure area connected to the Y direction has a full width in the Y direction, slightly larger than 85.9 cm and 87 cm. At this time, based on the simulation results shown in FIG. 12, when the diameter φ of the cylindrical wheel 21 (cylindrical mask M) is 52.5 cm, the exposure slit width D when the allowable defocus amount is set to 25 μm It is 7.4 mm, and the exposure slit width D when the allowable defocus amount is 50 μm is 10.3 mm. Therefore, when scanning exposure of the substrate P using the reticle M (cylinder wheel 21) shown in FIG. 13 as the reference, various exposure conditions are applied based on the exposure slit width D of 7.4 mm or less or 10.3 mm or less (The moving speed of the substrate P, the illuminance of the illumination beam EL1, etc.) is optimized. That is, when the allowable defocus amount ΔZ is set to 25 μm or less, the opening of the illumination field diaphragm 55 in FIG. 4 or the opening of the projection field diaphragm 63 in the projection optical system PL is adjusted so that The exposure slit width D (the width of the projection area PA in the scanning exposure direction) becomes a predetermined value of 7.4 mm or less.

Next, the outer peripheral surface (mask surface P1) of the cylindrical wheel 21 set for the 60-inch display panel mask M shown in FIG. 13 will be described, with an aspect ratio of 16:9 (Asp=16/9) The case of M3 for the 32-inch display panel. The size of the mask surface P1 of the cylindrical wheel 21 is such that the length L in the Y direction is 85.9 cm and the length θ in the θ direction is φ=164.4 cm, which is the same as the mask M used as a reference to display the longitudinal direction of the screen area DPA When one (one side) 32-inch mask M3 for a display panel is arranged in the θ direction, a large margin will be generated around the mask M3 on the mask surface P1.

In the case of this 32-inch display panel, the long-side dimension Ld of the display screen area DPA is 70.8 cm, and the short-side dimension Lc is 39.9 cm. In addition, when the magnification e1 of the peripheral circuit area TAB adjacent to both sides or one side of the longitudinal direction of the display screen area DPA is set to 1.2 (20%), the θ-direction size of the mask M3 is approximately 15cm becomes 85.8cm. If the white part 92 is further provided in the θ direction by about 5cm, the total length becomes 90.8cm. Therefore, the mask M3 is formed on the mask surface P1 of the cylindrical wheel 21 prepared for the reference mask M only about 55% of the entire circumference (π φ=164.4 cm). The length L in the Y direction of the mask surface P1 of the cylindrical wheel 21 as the reference is 85.9 cm, and the length Y in the Y direction of the mask M3, if the magnification e2 of the short side direction of the display screen area DPA is set to 1.15 ( 15% 呗) degree is 45.8cm. Therefore, the mask M3 is formed on the mask surface P1 of the cylindrical wheel 21 as a reference only about 53% of the dimension in the Y direction (L=85.9 cm). Therefore, when one mask M3 for a 32-inch display panel is arranged on the mask surface P1 of the cylindrical wheel 21 as a reference so that the long side direction of the display screen area DPA is the θ direction, the occupied area of the mask M3 It is only about 30% of the total area of the mask P1, which is not efficient.

Therefore, in order to efficiently arrange one mask M3 on the cylindrical wheel 21, the diameter φ of the cylindrical wheel 21 is changed so that the total length of the mask M3 in the θ direction and the size of the blank portion 92 is 90.8 cm. For the circumference, the minimum diameter φ should be 28.91cm. Therefore, as the cylindrical wheel 21 for the reticle M3, prepare a diameter φ of 29 cm. According to the simulation results in FIG. 12, the exposure slit width D when the diameter φ = 29 cm, when the allowable defocus amount ΔZ is 25 μm When it is about 5.4 mm and the allowable defocus amount △Z is 50 μm, it is about 7.6 mm.

When comparing this with the exposure slit width D (7.4 mm or 10.3 mm) set for the cylindrical wheel 21 as a reference, if it is the reference mask surface P1 (cylindrical wheel 21 with a diameter of φ=52.5 cm) In this case, the exposure slit width D is set to 10.3 mm (the allowable defocus amount is 50 μm), and the moving speed of the substrate P set to obtain a proper positive exposure amount is set to V1. At this time, when the substrate P of the same condition is exposed to the pattern of the mask M3 on one side of the 32-inch display panel of the cylindrical wheel 21 with a diameter of φ=29 cm, the exposure slit width D is 7.6 mm (permissible defocus amount 50μm), when the illuminance is constant, the moving speed V2 of the substrate P to obtain a proper exposure is V2=(7.6/10.3)V1, the overall substrate processing speed of the production line is reduced by about 25%. When the allowable defocus amount △Z is 25 μm, the productivity decreases to the same extent.

In view of the above situation, the mask M3 for a 32-inch display panel with an aspect ratio of 16:9 will be described with reference to FIG. 15. In the configuration shown in FIG. 14, a two-sided cylindrical mask (cylindrical wheel 21) is used. Specific examples. In FIG. 15, the long-side dimension Ld of the display screen area DPA is 70.8 cm, and the short-side dimension Lc is 39.9 cm. In addition, since the magnification e1 of the long side direction (Y direction) of the mask M3 passing through the peripheral circuit area TAB is set to about 1.2, and the magnification e2 of the short side direction (θ direction) is set to about 1.15, the light The length L of the mask M3 in the Y direction increases by about 15 cm to 85.8 cm, and the length Lg in the θ direction of the mask M3 increases by about 6 cm to 45.9 cm.

Here, when the θ-direction dimension of the interval Sx (the margin portion 92) adjacent to the long side of the mask M3 is 10 cm, the θ-direction length of the entire mask region including two masks M3 and two intervals Sx , Which is 110.8 cm due to 2(Lg+Sx). Therefore, the diameter φ of the cylindrical wheel 21 at this time should be about 35.3 cm. The length L in the Y direction of the mask surface P1 on the cylindrical wheel 21 is at least 85.8 cm. This length L (85.8 cm) can be accommodated in the range of 87 cm in the full width in the Y direction of the exposure area (the total length in the Y direction of the projection areas PA1 to PA6) set by the cylindrical wheel 21 as the reference. Therefore, the photomask M3 shown in FIG. 15 takes a two-sided cylindrical mask (φ=35.3cm, L=85.8cm cylindrical wheel 21), and the cylindrical mask (φ=52.5cm, L=85.9cm cylindrical wheel 21) Similarly, it can be installed in the exposure device U3 to efficiently expose the pattern of the photomask M3 onto the substrate P.

Fig. 16 is a development view showing a schematic configuration of another example in which the mask M3 for a 32-inch display panel shown in Fig. 15 is taken on two sides. Here, it is assumed that the mask M3 of the same size as that in FIG. 15 is arranged in the Y direction without gaps in such a manner that the long side direction of the display screen area DPA is the θ direction, and the dimension L of the two masks M3 in the Y direction is L It is 91.8cm (2×45.9cm). This length L (91.8 cm) cannot be accommodated in the range of 87 cm in the full Y-direction width (total length in the Y-direction of the projection areas PA1 to PA6) of the exposure area set with the cylindrical wheel 21 as the reference. In other words, it means that two faces of the same mask M3 as shown in FIG. 15 rotated by 90° cannot be arranged on the mask face P1 of the cylindrical wheel 21 as a reference.

FIG. 17 is a development view of a schematic configuration of another example in which the mask M3 for a 32-inch display panel shown in FIG. 15 is taken as one surface. Here, it is assumed that one mask M3 of the same size as that in FIG. 15 is arranged so that the short side direction of the display screen area DPA is the θ direction, and the interval Sx of the θ direction white space 92 is 10 cm. Such a configuration of the mask M3 has a positively small occupation surface of the mask surface P1 of the standard cylindrical wheel 21 and is inefficient. Therefore, when setting a cylindrical wheel 21 suitable for the size of the mask M3 with one face in FIG. 17, the full circumference π φ of the cylindrical wheel 21 is determined by the dimension Lg (45.9 cm) of the mask M3 in the θ direction and The total size (10 cm) of the remaining white part 92 (Sx) is π φ=55.9 cm. Since the diameter φ of the cylindrical wheel 21 is 17.8 cm or more, it is regarded as 18 cm. In addition, in this case, the length L in the Y direction of the mask M3 is 85.8 cm as in FIG. 15, so the ratio L/φ is approximately 4.77.

As described above, if the diameter φ (18cm) is smaller than the diameter φ (52.5cm) of the standard cylindrical mask (cylinder wheel 21), the light can be efficiently arranged on the mask surface P1 Cover M3, but productivity will be reduced. According to the simulation of FIG. 12, when the diameter of the mask surface P1 is set to 18.0 cm, the exposure slit width D when the allowable defocus amount △Z is set to 25 μm is about 4.3 mm, and the allowable defocus amount △Z The exposure slit width D at 50 μm is about 6.0 mm. Therefore, the moving speed V2 of the substrate P decreases with the narrowing of the exposure slit width D relative to the moving speed V1 of the substrate P when a standard cylindrical mask (cylinder wheel 21) is used. When the allowable defocus amount △Z is set to 25μm, V2=(4.3/7.4)V1, and when the allowable defocus amount △Z is set to 50μm, V2=(6.0/10.3)V1. Compared with the case of the cylindrical mask, the productivity drops to about 58%.

Next, a specific example in which three masks M3 of the same size as in FIG. 15 are arranged in the θ direction with the long side direction facing the Y direction as shown in FIG. 15 will be described with reference to FIG. 18. The arrangement of the photomask M3 of FIG. 18 is the same as that of the previous FIG. 8 with three sides.

Here, when the θ-direction dimension of the white part 92 (Sx) and the interval Sx adjacent to the long sides of the three masks M3 are all set to 9 cm, the dimension Lg in the short-side direction of the mask M3 is 45.9 cm, Therefore, the length in the θ direction of the entire mask area is 164.7 cm due to 3(Lg+Sx). In this case, when the length in the θ direction of the entire mask area is made to coincide with the entire circumference π φ of the cylindrical wheel 21, the diameter φ of the cylindrical wheel 21 is 52.43 cm or more. This value is approximately the same as the diameter of the standard cylindrical mask φ=52.5cm. In addition, the dimension L in the Y direction of the mask area is 85.8 cm, and the total width in the Y direction of the exposure area (projection areas PA1 to PA6) is within 87 cm.

As mentioned above, if it is a mask M3 for a 32-inch display panel with an aspect ratio of 16:9, by taking three sides as shown in FIG. 18, only the cylindrical wheel 21 (φ=52.5cm) as a standard By adjusting the size of the white part 92 and the interval Sx on the mask surface P1, the mask M3 can be efficiently arranged. Therefore, when the mask M3 is taken on three sides as shown in FIG. 18, the size (φ×L) of the standard cylindrical mask can still be used, so there is no reduction in productivity. In the case of FIG. 18, the ratio L/φ is about 1.63, which falls within the range of 1.3≦L/φ≦3.8, which is considered to be an efficient production range.

As shown in FIGS. 15 to 18, a display panel element of any size is made based on the size of the mask surface P1 of the cylindrical mask (cylinder wheel 21) that can be attached to the exposure device U3. , By adjusting the directionality and the number of faces, so that the ratio L/φ when the cylindrical wheel 21 takes one mask, or multi-sided configuration is in the range of 1.3 to 3.8, that is, without reducing production efficiency Efficiently transfer the pattern.

15 to 18, the size of the mask surface P1 of the single 1 display panel element for which the display screen area DPA is made to have an aspect ratio of 16:9 and 60 inches is set as a reference. However, it is not limited to this. For example, the display screen area DPA may also be a 65-inch screen with a high aspect ratio of 16:9. In this case, the diagonal length Le of the display screen area DPA arranged as shown in FIG. 13 is 165.1 cm, the short side Lc extending in the Y direction is 80.9 cm, and the long side Ld extending in the θ direction is 143.9 cm. In addition, the overall size of the mask M including the peripheral circuit area TAB is only larger than the size of the display screen area DPA, and the magnification ratio e1=1.2 in the long-side direction (θ direction) (the long-side direction of the display screen area DPA increases by 20 %), a large magnification e2 = 1.15 in the short-side direction (Y direction) (increase 15% in the short-side direction of the display screen area DPA). Therefore, in the case of a 65-inch display panel with an aspect ratio of 16:9 and one side of the mask M, the dimension of the mask M in the longitudinal direction is 172.7 cm according to e1‧Asp‧Lc shown in FIG. 13 The size of the short side direction is 93.1cm according to e2‧Lc shown in Figure 13. When one mask M is taken, although the blank portion 92 is provided adjacent to the θ direction, if the dimension (Sx) in the θ direction is 5 cm, the dimension in the θ direction of the mask surface P1 becomes about 178 cm and the diameter φ is 56.7 cm above. In addition, since the Y-direction length of the mask surface P1 is 93.1 cm, the exposure device U3 that can be mounted on the 65-inch cylindrical mask as a reference is the full width of the exposure area in the Y direction ( The total of the Y-direction widths of the projection areas PA1 to PA6) is, for example, 95.0 cm, and six projection optical systems PL are provided which change the Y-direction size of the projection area PA. Alternatively, seven projection optical systems installed in the Y direction and one additional projection optical system PL are added. This 65-inch display panel with an aspect ratio of 16:9 uses a cylindrical mask (cylindrical wheel 21) with a ratio L/φ of L/φ=1.64 (≒93.1/56.7). In addition, since the diameter φ of the cylindrical mask is 56.7 cm, according to the simulation results in FIG. 12, the exposure slit width D is about 7.5 mm when the allowable defocus amount ΔZ is set to 25 μm, and the allowable defocus amount is When △Z is set to 50 μm, it is about 10.6 mm.

For this reason, referring to FIG. 19, a cylindrical mask (φ=56.7cm, L=93.1cm) for one side of a 65-inch display panel with an aspect ratio of 16:9 will be used, and three 37-inch display panels will be used. A specific example when the mask M4 is multifaceted in the arrangement as shown in FIG. 18. In FIG. 19, the 37-inch display screen area DPA has a long side Ld (Y direction) of 81.9 cm and a short side Lc (θ direction) of 46.1 cm. The magnification e1 in the long side direction and the direction in the short side direction When the magnification e2 is set to 1.15 (15% increase), the long side dimension L (e1‧Ld) of the mask M4 is about 94.2cm, and the short side dimension Lg (e2‧Lc) is about 53.0cm.

Here, if the interval Sx between the mask M4 and the mask M4 is about 6.0 cm, the total circumference of the three masks M4 and the three intervals Sx on the mask surface P1 in the θ direction is π φ, Because π φ=3Lg+3Sx, it is about 177cm, and the diameter φ is more than 56.4cm. In addition, since the length L in the Y direction of the mask M4 is 94.2 cm, it falls within the full width (95 cm) in the Y direction of the exposure area. In addition, in the case of FIG. 19, the seventh projection optical system PL (projection area PA7) is added in the Y direction, so that the total width of the exposure area in the Y direction is 95 cm. As can be seen from the above, when taking a three-sided photomask for a 37-inch display panel as shown in FIG. 19, a cylindrical photomask (cylindrical wheel) for taking a photomask M for a 65-inch display panel on one side can be used. 21) Objects of the same shape and size. As described above, in the case of the mask M4 shown in FIG. 19, the interval Sx between the three masks M4 can be reduced with respect to the entire area of the mask surface P1 of the cylindrical wheel 21 as a reference for efficiency And the cylindrical wheel 21 of the same diameter φ as the cylindrical mask used as the reference can be used, so that the productivity decrease caused by the reduction of the exposure slit width D can also be suppressed.

In addition, when the size of the display screen area DPA of the display panel element is set to 37 inches and two sides are used for the photomask M4, the same arrangement as in FIG. 15 described above can be used. In this case, when the total dimension in the θ direction between the two masks M4 and the two spaces Sx is the entire circumference of the cylindrical mask π φ, and the spacing Sx is about 6 cm, π φ≒118.0cm. Therefore, the diameter φ of the cylindrical mask (cylindrical wheel 21) when the two-sided mask M4 is efficiently arranged in the circumferential direction is 37.6 cm or more.

In this case, the ratio L/φ becomes approximately 2.5 (≒94.2/37.6). In addition, in the case of the cylindrical wheel 21 with a diameter of φ=37.6 cm, according to the simulation in FIG. 12, the exposure slit width D is approximately 6 mm when the allowable defocus amount ΔZ is 25 μm, and the allowable defocus amount ΔZ is In the case of 50μm, it is about 8.6mm. Compared with the exposure slit width D (7.5mm, 10.6mm) set as the reference relative to the cylindrical mask with the diameter φ=56.7cm as the reference, whether the allowable defocus amount △Z is set to 25μm or 50μm In either case, the productivity (movement speed of the substrate P) is about 80%. However, if the illuminance of the illumination beam EL1 can be made larger by about 20% when exposed using a cylindrical mask as a reference, there will be no substantial reduction in productivity.

In addition, although the exposure apparatus U3 of the present embodiment projects the mask pattern of the cylindrical mask (cylindrical wheel 21) on the substrate P at an equal magnification, it is not limited to this. The exposure device U3 can adjust the configuration of the projection optical system PL, the peripheral speed of the cylindrical mask (cylindrical wheel 21) and the moving speed of the substrate P, etc., and enlarge the pattern of the mask M at a predetermined magnification and project it on the substrate P It can also be projected on the substrate P after the predetermined magnification is reduced.

As described above, in the cylindrical mask that can be attached to the exposure device U3 of this embodiment, as shown in FIGS. 8, 9, 14, 14, and 18, 19, the longitudinal direction of the rectangular display screen area DPA is Y In the direction, when two or more mask regions (masks M1, M2, M3, M4) are arranged in multiple planes with an interval Sx in the θ direction, the cylindrical mask (cylindrical wheel 21) is constructed as follows.

A mask pattern (masks M1~M4) is formed along the cylindrical surface (P1) with a certain radius (Rm) from the center line (AX1), and is mounted on the cylinder of the exposure device in a rotatable manner about the center line The mask is arranged on the cylindrical surface in the circumferential direction (the θ direction) of the cylindrical surface at intervals Sx to form n (n≧2) aspect ratios including the long-side dimension Ld and the short-side dimension Lc ( =Ld/Lc) the display screen area (DPA) and the rectangular mask area (mask M1~M4) for the display panel of the peripheral circuit area (TAB) adjacent to the periphery of (Y direction) dimension L is set to e1 times the long side dimension Ld of the display screen area (magnification e1≧1), and the short side direction (θ direction) of the mask area is set to the short side of the display screen area When the size Lc is e2 times (magnification e2≧1), the length of the cylindrical surface in the centerline direction (Y direction) is set to be equal to or greater than the dimension L (=e1‧Ld), and the diameter of the cylindrical surface is The full circumference π of the aforementioned cylindrical surface of φ is set to n(e2‧Lc+Sx). Further, the aforementioned is set such that the ratio of the dimension L to the diameter φ is within the range of 1.3≦L/φ≦3.8 The diameter φ, the aforementioned number n, and the aforementioned interval Sx.

[Second Embodiment]

Next, referring to Fig. 20, an exposure apparatus U3a according to the second embodiment will be described. In addition, in order to avoid duplication of description, only the parts that are different from the first embodiment will be described, and the same constituent elements as the first embodiment will be given the same symbols as the first embodiment for description. Fig. 20 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment. The exposure apparatus U3 of the first embodiment is configured to hold the substrate P passing through the projection area with a cylindrical substrate support tube 25, but the exposure apparatus U3a of the second embodiment can Or the two-dimensionally moving substrate support mechanism 12a holds the substrate P in a planar shape. Therefore, the substrate P of the present embodiment may be not only a sheet-shaped sheet substrate based on flexible resin (PET, PEN, etc.), but also a sheet-shaped thin glass substrate.

In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 provided with a support surface P2 that holds the substrate P in a planar shape, and a surface in which the substrate stage 102 is orthogonal to the center plane CL A mobile device that scans in the X direction (not shown).

Since the supporting surface P2 of the substrate P in FIG. 20 is a plane substantially parallel to the XY plane (a plane orthogonal to the center plane CL), it reflects from the reticle M and passes through the projection optical module PLM (projection optical system PL1 to PL6) The chief ray of the projection light beam EL2 projected on the substrate P is set to be perpendicular to the XY plane.

Moreover, in the second embodiment, when the projection magnification of the projection optical module PLM is set to be equal to (×1), the odd number from the reticle M when viewed in the XZ plane is the same as in the previous FIG. 2 The circumference distance CCM from the center point of the numbered illumination area IR1 (and IR3, IR5) to the center point of the even numbered illumination area IR2 (and IR4, IR6) is the projection of the odd number on the substrate P along the support surface P2 The distance CCP in the X direction (scanning exposure direction) from the center point of the area PA1 (and PA3, PA5) to the center point of the even-numbered second projection area PA2 (and PA4, PA6) is set to be substantially equal.

The exposure device U3a of FIG. 20 is also a movement device (a linear motor for scanning exposure and an actuator for fine movement, etc.) controlled by a lower-level control device 16 and a cylindrical wheel 21 holding a cylindrical mask M The substrate stage 102 is driven to rotate in precise synchronization. Therefore, the X-axis and Y-axis movement positions of the substrate stage 102 are precisely measured by a laser interferometer or linear encoder for distance measurement, and the rotational position of the cylindrical wheel 21 is also accurately measured by a rotary encoder. In addition, the support surface P2 of the substrate stage 102 can be formed by a vacuum suction or electrostatic suction adsorption holder during scanning exposure, or a static pressure gas bearing can be formed between the support surface P2 and the substrate P The Bernoulli-type holder that supports the substrate P in a contact state or a low-friction state is configured.

In the case of a Bernoulli type holder, since the substrate P may be a flexible long thin-film substrate, the substrate P is moved in the X direction while applying tension in the X direction (and Y direction) to the substrate P. Therefore, There is no need to move the substrate stage 102 (Benuli-type holder) in the X and Y directions. In addition, the support surface P2 only needs to have an area that can cover the range of the projection areas PA1 to PA6, so the substrate stage 102 can be sought miniaturization. In addition, in the case of the Bernoulli type holder, if the substrate P is an elongated thin-film substrate, scanning exposure can be performed while continuously moving the substrate P in the longitudinal direction. Therefore, the substrate P needs to be adsorbed/opened, etc. Compared with the occasion of the adsorption holder with additional time, it is more suitable for "roll-to-roll" manufacturing.

Like the exposure device U3a, when the supporting surface P2 is substantially parallel to the XY plane and the substrate P is supported in a planar shape, the mask M (M1 to M4) can be maintained in a cylindrical shape The shape condition (L/φ) of the cylindrical wheel 21 satisfies the relationship described in the first embodiment above, and the mask patterns of display panels of various sizes can be efficiently arranged on the substrate P and exposed. And can inhibit the reduction of productivity.

[Third Embodiment]

Next, the exposure apparatus U3b of the third embodiment will be described with reference to FIG. 21. In addition, in order to avoid duplication of description, only the parts that are different from the first and second embodiments are described, and the same components as the first and second embodiments are given the same symbols as the first and second embodiments. Be explained. 21 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment. The exposure device U3a of the second embodiment is a configuration of a reflective reticle in which the light reflected by the reticle becomes the projection beam EL2, but the exposure device U3b of the third embodiment is a projection ray using the light passing through the reticle The structure of EL2's transmissive mask.

In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a cylindrical wheel (mask holding cylinder) 21a holding the mask MA in a cylindrical shape, a guide roller 93 supporting the mask holding cylinder 21a, and driving light The drive roller 98 and the drive unit 99 of the cover holding cylinder 21a.

The mask holding cylinder 21a forms a mask surface (P1) where the illumination region IR on the mask MA is arranged. In this embodiment, the mask surface is set as a cylindrical surface with a radius Rm (diameter φ=2Rm) from the center line AX1' extending in the Y direction. The cylindrical surface is, for example, a cylindrical outer peripheral surface, a cylindrical outer peripheral surface, or the like. The mask holding cylinder 21a is made of, for example, glass, quartz, etc., and is an annular transparent cylinder having a certain thickness, and its outer peripheral surface (cylindrical surface) is formed as a mask surface.

The mask MA is, for example, a translucent flat sheet mask formed by patterning a light-shielding layer of chromium or the like on one surface of a short thin glass plate (for example, with a thickness of 100 to 500 μm) with good flatness, which follows the light The outer circumferential surface of the cover holding tube 21a is curved, and is used in a state of being wound (attached) to this outer circumferential surface. The mask MA has a non-patterned area where no pattern is formed, and is attached to the reticle holding cylinder 21a in the non-patterned area (corresponding to the peripheral blank portion 92, etc.). Therefore, in this case, the mask MA can attach and detach the mask holding cylinder 21a. Also, instead of winding a flat sheet mask around the outer peripheral surface of the mask holding cylinder 21a (annular transparent cylinder) as the mask MA, the outer peripheral surface of the mask holding cylinder 21a made of the annular transparent cylinder A mask pattern composed of a light-shielding layer such as chrome is directly drawn and integrated. In this case, the mask holding cylinder 21a also has the function of a support member (mask support member) of the mask MA.

The guide roller 93 and the driving roller 98 extend in the Y-axis direction parallel to the center line AX1' of the mask holding cylinder 21a. The guide roller 93 and the driving roller 98 are provided so as to circumscribe the vicinity of the Y-direction end of the mask holding cylinder 21a, but are not in contact with the pattern forming area of the mask MA held by the mask holding cylinder 21a. The drive roller 98 is connected to the drive unit 99. The driving roller 98 transmits the torque supplied from the driving unit 99 to the reticle holding cylinder 21a, thereby rotating the reticle holding cylinder 21a around the central axis.

The light source device 13a of this embodiment includes the same light source (not shown) as the first embodiment and a plurality of illumination optical systems ILa (ILa1 to ILa6). Part or all of the illumination optical systems ILa1 to ILa6 are arranged inside the mask holding tube 21a (annular transparent tube), and the mask held on the outer peripheral surface (mask surface P1) of the mask holding tube 21a is illuminated from the inside Each illumination area IR1~IR6 on MA.

Each illumination optical system ILa1~ILa6 is equipped with a compound eye lens and a rod integrator, etc., and illuminates each illumination area IR1~IR6 with uniform illuminance by the illumination light beam EL1. In addition, the light source may be arranged inside the mask holding cylinder 21a, or may be arranged outside the mask holding cylinder 21a. In addition, the light source can also be provided separately from the exposure device U3b and guided through light guide units such as optical fibers and relay lenses.

As described in this embodiment, when a transparent cylindrical mask is used as a mask, the shape condition (L/φ) of the mask support tube 21a that holds the mask MA in a cylindrical shape can also satisfy the previous requirement According to the relationship described in the first embodiment, the mask patterns of display panels of various sizes are efficiently arranged on the substrate P for exposure, and the reduction in productivity is suppressed.

The exposure devices U3, U3a, and U3b of the first, second, and third embodiments above are all mask patterns formed on the cylindrical mask surface P1 (cylindrical wheel 21, mask holding cylinder 21a) Projection exposure to the substrate P through the projection optical module PLM (PL1~PL6). However, in the case of the transmission cylindrical mask (MA) as in the third embodiment, it may be between the outer peripheral surface of the transmission cylindrical mask (mask surface P1) and the surface of the substrate P to be exposed Keep a certain gap (tens of μm to hundreds of μm) between the transparent cylindrical mask (MA) and the substrate P, while rotating the transparent cylindrical mask, the substrate P Proximity scanning exposure device with synchronous movement in directions.

In addition, the exposure apparatuses U3, U3a, and U3b of the first to third embodiments are provided to accommodate the variable diameter φ of the cylindrical mask (cylinder wheel 21, mask holding cylinder 21a) that can be mounted. A mechanism that can adjust the support position (Z position) of the cylindrical mask, or a mechanism that adjusts the state of the optical elements in the illumination optical system IL and the projection optical system PL, etc. In this case, the diameter φ of the cylindrical mask to which the exposure device can be mounted ranges from the minimum diameter φ 1 to the maximum diameter φ 2. Therefore, depending on the size of the display panel to be manufactured, when a mask with one or more sides (M, M1~M4) is used as a cylindrical mask, the relationship between 1.3≦L/φ≦3.8 and φ 1 For the relationship of ≦φ≦φ 2, the shape and size of the cylindrical wheel 21 and the mask holding cylinder 21a are preferably set.

<Component manufacturing method>

Next, referring to Fig. 22, a method of manufacturing a device will be described. FIG. 22 is a flowchart showing a method of manufacturing a component in a component manufacturing system.

The device manufacturing method shown in FIG. 22 firstly performs function and performance design of a display panel formed using self-luminous elements such as organic EL, and designs circuit patterns and wiring patterns required by CAD or the like (step S201). Next, a cylindrical mask of a desired layer amount is produced based on various patterns of each layer designed by CAD or the like (step S202). At this time, the cylindrical mask is made so that the relationship between the diameter φ and the length L(La) satisfies 1.3≦L/φ≦3.8, and satisfies the condition that it can be mounted on the exposure device, φ1≦φ≦φ2. And a roll FR1 for supplying the flexible substrate P (resin film, metal foil film, plastic, etc.) serving as the base material of the display panel is prepared (step S203). In addition, the roll substrate P prepared in this step S203 may be the one whose surface has been modified as necessary, or the bottom layer (for example, micro unevenness by imprint) has been formed in advance, or the light is previously deposited Inductive functional film or transparent film (insulating material).

Next, a substrate layer composed of electrodes or wiring, an insulating film, a TFT (thin film semiconductor), etc. constituting the display panel element is formed on the substrate P, and a light-emitting layer composed of a self-luminous element such as an organic EL is formed by being laminated on the substrate (Display pixel section) (step S204). In this step S204, the exposure devices U3, U3a, U3b included in the previous embodiments are installed with a predetermined cylindrical photomask, so that the photosensitive layer (photoresist layer, photosensitive silane coupling agent) coated on the surface of the substrate P Layer, etc.) exposure to form an image (latent image, etc.) of the photomask pattern on the surface, the substrate P on which the photomask pattern is formed by exposure is formed into a metal film pattern by electroless plating after development if necessary (Wiring, electrodes, etc.) wet process, or printing process of drawing patterns with conductive ink containing silver nanoparticles, etc.

Next, for each display panel element that is continuously manufactured on the long substrate P in a roll, the substrate P is cut, or a protective film (environmental barrier layer) or color filter film is attached to the surface of each display panel element. Assemble the component (step S205). Next, a step of checking whether the display panel element can operate normally or whether it satisfies the desired performance and characteristics is performed (step S206). Through the above method, a display panel (flexible display) can be manufactured.

21‧‧‧Cylinder wheel

92‧‧‧ White Department

94‧‧‧cutting line

AX1‧‧‧1st axis

M‧‧‧mask

P1‧‧‧ Mask

Rm‧‧‧ radius of curvature

SF‧‧‧shaft

Claims (16)

An exposure method in which a mask pattern formed with a predetermined aspect ratio is scanned and exposed on a long substrate by a scanning exposure device, including: rotating around a center line extending in a direction orthogonal to the scanning exposure direction and along A cylindrical mask with a diameter φ of a certain radius away from the center line, the cylindrical mask formed with the mask pattern is rotated at a predetermined rotation speed in such a manner that the circumferential direction of the cylindrical face becomes the scanning exposure direction; and Setting the longitudinal direction of the substrate to the scanning exposure direction to move the substrate at a predetermined speed; the dimension of the direction of the center line of the mask pattern formed on the cylindrical surface of the cylindrical mask When set to L, the ratio L/φ of the diameter φ to the size L is set in the range of 1.3≦L/φ≦3.8. The exposure method according to claim 1, wherein the pattern of the mask region formed on the cylindrical surface of the cylindrical mask is a reflection type composed of a high reflection part and a low reflection part with respect to the illumination light for exposure Mask pattern. The exposure method according to claim 2, wherein the scanning exposure device includes: an illumination optics for illuminating the illumination area set on the cylindrical surface of the cylindrical reticle with illumination light for exposure; projection Optics, which allows the reflected light from the reflective mask pattern appearing in the illumination area to enter and project the image of the mask pattern into the projection area on the substrate; and a polarizing beam splitter, which is disposed in Between the cylindrical mask and the projection optical system, the illumination light from the illumination optical system is reflected toward the cylindrical mask, and the reflected light from the cylindrical mask is transmitted toward the projection optical system. The exposure method according to claim 3, wherein the projection optics projects the image of the reflective mask pattern of the cylindrical mask on the substrate at an equal magnification. An exposure method in which a mask pattern formed in a rectangular mask area of a predetermined aspect ratio is scanned and exposed on a substrate by a scanning exposure device, including: bending along a diameter φ of a certain radius from a predetermined center line and One or more of the mask regions are formed on a cylindrical surface having a length L in the direction of the centerline, and the ratio L/φ of the diameter φ to the size L is set in the range of 1.3≦L/φ≦3.8 The cylindrical mask is mounted on the scanning exposure device so that the circumferential direction of the cylindrical surface becomes the scanning exposure direction, and rotates around the center line at a predetermined rotation speed; The rotation speed is synchronized with the movement of exposing the substrate in the scanning exposure direction while exposing the mask pattern to the substrate. The exposure method according to claim 5, wherein on the cylindrical surface of the cylindrical mask, one rectangular mask area for a display panel is formed with a short side parallel to the center line, the display A rectangular mask area for the panel includes a display screen area with a long side dimension of Ld and a short side dimension of Lc, and a peripheral circuit area adjacent to the periphery; set the size of the above mask area in the longitudinal direction E1 times (e1≧1) of the long-side dimension Ld including the peripheral circuit area, and the size of the short-side direction of the mask area is set to e2 times the short-side dimension Lc including the peripheral circuit area ( When e2≧1), the diameter φ and the dimension L are set in such a manner that π φ≧e1‧Ld (π is the pi) and L≧e2‧Lc. The exposure method according to claim 5, wherein, on the cylindrical surface of the cylindrical mask, the long side is parallel to the center line and arranged at intervals Sx in the circumferential direction of the cylindrical surface to form a number n( n≧2) The above-mentioned rectangular mask area for a display panel, the rectangular mask area for a display panel includes a display screen area with a long side dimension of Ld and a short side dimension of Lc and adjacently arranged on its periphery Peripheral circuit area; set the size of the mask area in the long-side direction to e1 times the long-side dimension Ld of the display screen area (e1≧1), and set the size of the mask area in the short-side direction to the above When the short side dimension Lc of the display screen area is e2 times (e2≧1), the total length La of the cylindrical surface in the direction of the center line is set to the above dimension L and the above ratio L/φ satisfies 1.3 to 3.8 In the range of π φ=n(e2‧Lc+Sx), the diameter φ, the number n, and the interval Sx are set. The exposure method according to claim 6 or 7, wherein the mask pattern formed in the mask area includes a pattern constituting a thin film semiconductor for driving each pixel arranged in the display screen area, and a pattern arranged on the periphery The circuit area is also used to drive the corresponding pattern of the circuit displaying the picture. The exposure method according to claim 8, wherein the ratio of the display screen area to the long-side dimension Ld and the short-side dimension Lc is 16:9 or 2:1 for a liquid crystal display or an organic EL display correspond. The exposure method according to claim 8, wherein the mask pattern formed in the mask area on the cylindrical surface of the cylindrical mask has a high reflection portion and a low reflection portion with respect to the illumination light for exposure Constituted reflective mask pattern. The exposure method according to claim 10, wherein the scanning exposure device includes: an illumination optical system for irradiating illumination light for exposure to an illumination area set on the cylindrical surface of the cylindrical mask; projection Optics, which allows the reflected light from the reflective mask pattern appearing in the illumination area to enter and project the image of the mask pattern into the projection area on the substrate; and a polarizing beam splitter, which is disposed in Between the cylindrical mask and the projection optical system, the illumination light from the illumination optical system is reflected toward the cylindrical mask, and the reflected light from the cylindrical mask is transmitted toward the projection optical system. The exposure method according to claim 11, wherein the projection optics projects the image of the reflective mask pattern of the cylindrical mask on the substrate at an equal magnification. The exposure method according to claim 5, wherein the mask pattern formed in the mask area on the cylindrical surface of the cylindrical mask is provided with a high reflection portion and a low reflection portion with respect to the exposure illumination light Constituted reflective mask pattern. The exposure method according to claim 13, wherein the scanning exposure device includes: an illumination optical system for irradiating illumination light for exposure to an illumination area set on the cylindrical surface of the cylindrical mask; projection Optics, which allows the reflected light from the reflective mask pattern appearing in the illumination area to enter and project the image of the mask pattern into the projection area on the substrate; and a polarizing beam splitter, which is disposed in Between the cylindrical mask and the projection optical system, the illumination light from the illumination optical system is reflected toward the cylindrical mask, and the reflected light from the cylindrical mask is transmitted toward the projection optical system. The exposure method according to claim 14, wherein the projection optics projects the image of the reflective mask pattern of the cylindrical mask on the substrate at an equal magnification. A device manufacturing method comprising forming a pattern for a display panel element on a flexible thin-film substrate, comprising: the step of forming a photosensitive functional layer on the surface of the thin-film substrate; by any one of claims 1 to 15 The exposure method described above, a step of transferring a mask pattern corresponding to the pattern for the display panel element formed along the cylindrical surface of the cylindrical mask to the photosensitive functional layer of the sheet substrate; and Processing the exposed sheet substrate so that at least one of the wiring, electrode, metal layer, insulating layer, semiconductor layer, and light-emitting layer is formed corresponding to the mask pattern transferred to the photosensitive functional layer Steps.

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