WO2014178244A1 - Substrate processing apparatus, device manufacturing method, and cylindrical mask - Google Patents

Substrate processing apparatus, device manufacturing method, and cylindrical mask Download PDF

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Publication number
WO2014178244A1
WO2014178244A1 PCT/JP2014/058590 JP2014058590W WO2014178244A1 WO 2014178244 A1 WO2014178244 A1 WO 2014178244A1 JP 2014058590 W JP2014058590 W JP 2014058590W WO 2014178244 A1 WO2014178244 A1 WO 2014178244A1
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WO
WIPO (PCT)
Prior art keywords
mask
substrate
cylindrical
pattern
projection
Prior art date
Application number
PCT/JP2014/058590
Other languages
French (fr)
Japanese (ja)
Inventor
加藤　正紀
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to CN201480037519.5A priority Critical patent/CN105359040B/en
Priority to JP2015514784A priority patent/JP6269660B2/en
Priority to KR1020197025601A priority patent/KR102079793B1/en
Priority to KR1020157033942A priority patent/KR101924255B1/en
Priority to KR1020187034083A priority patent/KR102019620B1/en
Priority to KR1020187034082A priority patent/KR101979562B1/en
Priority to KR1020207004470A priority patent/KR102096961B1/en
Publication of WO2014178244A1 publication Critical patent/WO2014178244A1/en
Priority to HK16103220.8A priority patent/HK1215308A1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning

Definitions

  • the present invention relates to a substrate processing apparatus that projects a mask pattern onto a substrate, and exposes the pattern onto the substrate, a device manufacturing method, and a cylindrical mask used therefor.
  • the device manufacturing system includes a substrate processing apparatus such as an exposure apparatus.
  • the substrate processing apparatus described in Patent Document 1 projects an image of a pattern formed on a mask arranged in an illumination area onto a substrate or the like arranged in a projection area, and exposes the pattern on the substrate.
  • Masks used in the substrate processing apparatus include planar ones and cylindrical ones.
  • the substrate processing apparatus can continuously expose the substrate by turning the mask into a cylindrical shape.
  • a substrate processing apparatus there is a roll-to-roll method in which a substrate is continuously fed into a long sheet form below a projection region.
  • the substrate processing apparatus can continuously transport both the substrate and the mask by rotating the cylindrical mask and using the roll-to-roll method as the substrate transport method. .
  • the substrate processing apparatus is usually required to efficiently expose the pattern on the substrate and improve the productivity.
  • a cylindrical mask is used as the mask.
  • An object of an aspect of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a cylindrical mask capable of producing a high-quality substrate with high productivity.
  • a projection optical system that projects a light beam from a mask pattern arranged in an illumination area of illumination light onto a projection area where a substrate is arranged, and a cylinder with a predetermined curvature in the illumination area
  • a mask support member for supporting the mask pattern along the first curved surface, a substrate support member for supporting the substrate along the predetermined second surface in the projection area, and the mask pattern are predetermined.
  • a driving mechanism that rotates the mask support member so as to move in the scanning exposure direction and moves the substrate support member so that the substrate moves in the scanning exposure direction.
  • forming the pattern of the mask on the substrate using the substrate processing apparatus according to the first aspect supplying the substrate to the substrate processing apparatus, A device manufacturing method is provided.
  • a mask pattern for an electronic device is formed along a cylindrical outer peripheral surface, and the cylindrical mask is rotatable around a center line, and the outer peripheral surface has a diameter of ⁇ .
  • the cylindrical base material has a length in the direction of the center line of the outer peripheral surface of La, and the maximum length in the direction of the central line of the mask pattern that can be formed on the outer peripheral surface of the cylindrical base material
  • a cylindrical mask is provided in which the ratio L / ⁇ of the diameter ⁇ to the length L is set in the range of 1.3 ⁇ L / ⁇ ⁇ 3.8 in the range of L ⁇ La.
  • a cylindrical mask in which a mask pattern is formed along a cylindrical surface having a constant radius from a predetermined center line and is mounted on an exposure apparatus so as to be rotatable around the center line.
  • the cylindrical surface includes a display screen region having a long side dimension Ld, a short side dimension Lc, an aspect ratio Asp of Ld / Lc, and a peripheral circuit region provided adjacent to the periphery of the display screen region.
  • Mask regions are formed in a row with a spacing Sx in the circumferential direction of the cylindrical surface, with n (n ⁇ 2) arranged side by side, and the longitudinal dimension L of the mask region is set to e of the long side dimension Ld of the display screen region.
  • the center line of the cylindrical surface When the dimension in the short direction of the mask region is set to e 2 times (e 2 ⁇ 1) of the short side dimension Lc of the display screen region (e 1 ⁇ 1), the center line of the cylindrical surface
  • a cylindrical mask is provided in which the diameter ⁇ , the number n, and the spacing Sx are set so that 3 ⁇ L / ⁇ ⁇ 3.8.
  • the relationship between the diameter ⁇ and the length L of the cylindrical surface shape held by the mask support member or the cylindrical surface shape of the pattern formed on the mask is set within the above range.
  • the device pattern can be efficiently exposed and transferred with high productivity.
  • panels with various display sizes can be used even in the case of multi-planar arrangement in which a plurality of display panel patterns are arranged along the peripheral surface of the cylindrical mask. Can be arranged efficiently.
  • FIG. 1 is a diagram illustrating an overall configuration of a device manufacturing system according to the first embodiment.
  • FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment.
  • FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG.
  • FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG.
  • FIG. 5 is a diagram showing the state of the illumination light beam irradiated on the cylindrical mask and the state of the projected light beam generated from the cylindrical mask.
  • FIG. 6 is a perspective view showing a schematic configuration of a cylindrical drum and a mask constituting the cylindrical mask.
  • FIG. 7 is a development view showing an arrangement example when one mask for the display panel is cut on the mask surface of the cylindrical mask.
  • FIG. 8 is a development view showing an arrangement example in which three masks of the same size are arranged in a line on a mask surface of a cylindrical mask and three chamfers are formed.
  • FIG. 9 is a development view showing an arrangement example in which four masks of the same size are arranged in a line on the mask surface of the cylindrical mask and the four surfaces are chamfered.
  • FIG. 10 is a development view showing an arrangement example in which four masks of the same size are taken in two rows and two columns on the mask surface of the cylindrical mask.
  • FIG. 11 is a development view illustrating an example of a two-chamfer arrangement of a display panel mask having an aspect ratio of 2: 1.
  • FIG. 12 is a graph simulating the relationship between the diameter of the cylindrical mask and the exposure slit width under a specific allowable defocus amount.
  • FIG. 13 is a developed view showing a specific example in the case of taking one face of a mask for a 60-inch display panel.
  • FIG. 14 is a development view showing an example of a two-chamfer arrangement of a mask.
  • FIG. 15 is a development view showing a first arrangement example of a two-chamfer mask for a 32-inch display panel.
  • FIG. 16 is a development view showing a second arrangement example of a two-chamfer mask for a 32-inch display panel.
  • FIG. 12 is a graph simulating the relationship between the diameter of the cylindrical mask and the exposure slit width under a specific allowable defocus amount.
  • FIG. 13 is a developed view showing a specific example in the
  • FIG. 17 is a developed view showing a specific example in the case of taking one mask for a 32-inch display panel.
  • FIG. 18 is a developed view showing a specific arrangement example of three-chamfering of a mask for a 32-inch display panel.
  • FIG. 19 is a development view showing a specific arrangement example of three-chamfering of a mask for a 37-inch display panel.
  • FIG. 20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment.
  • FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment.
  • FIG. 22 is a flowchart showing a device manufacturing method by the device manufacturing system.
  • a substrate processing apparatus that performs exposure processing on a substrate is an exposure apparatus.
  • the exposure apparatus is incorporated in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate.
  • a device manufacturing system will be described.
  • FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment.
  • a device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. Examples of the flexible display include an organic EL display.
  • the device manufacturing system 1 sends out the substrate P from the supply roll FR1 in which the flexible substrate P is wound in a roll shape, and continuously performs various processes on the delivered substrate P.
  • a so-called roll-to-roll system is adopted in which the processed substrate P is wound around the collection roll FR2 as a flexible device.
  • the substrate P which is a film-like sheet
  • the substrates P sent out from the supply roll FR1 are sequentially supplied to n processing apparatuses U1, U2. , U3, U4, U5,... Un, and the example until being wound around the collecting roll FR2.
  • n processing apparatuses U1, U2. , U3, U4, U5,... Un and the example until being wound around the collecting roll FR2.
  • a foil (foil) made of a resin or a metal such as stainless steel or an alloy is used for the substrate P.
  • the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Includes one or more.
  • the thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film.
  • the inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like.
  • the substrate P may be a single layer of ultrathin glass having a thickness of about 100 ⁇ m manufactured by a float process or the like, or a laminate in which the above resin film, foil, or the like is bonded to the ultrathin glass. It may be.
  • the substrate P configured in this way becomes a supply roll FR1 by being wound in a roll shape, and this supply roll FR1 is mounted on the device manufacturing system 1.
  • the device manufacturing system 1 to which the supply roll FR1 is mounted repeatedly executes various processes for manufacturing one device on the substrate P sent out from the supply roll FR1. For this reason, the processed substrate P is in a state where a plurality of devices are connected. That is, the substrate P sent out from the supply roll FR1 is a multi-sided substrate.
  • the substrate P was modified and activated in advance by a predetermined pretreatment, or a fine partition structure (uneven structure) for precise patterning was formed on the surface by an imprint method or the like. Things can be used.
  • the treated substrate P is recovered as a recovery roll FR2 by being wound into a roll.
  • the collection roll FR2 is attached to a dicing device (not shown).
  • the dicing apparatus to which the collection roll FR2 is mounted divides the processed substrate P for each device (dicing) to form a plurality of devices.
  • the dimension in the width direction (short direction) is about 10 cm to 2 m
  • the dimension in the length direction (long direction) is 10 m or more.
  • substrate P is not limited to an above-described dimension.
  • FIG. 1 shows an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal.
  • the X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane, and is the left-right direction in FIG.
  • the Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-rear direction in FIG.
  • the Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2.
  • the Z direction is the vertical direction, and is the vertical direction in FIG.
  • the device manufacturing system 1 includes a substrate supply device 2 that supplies a substrate P, processing devices U1 to Un that perform various processes on the substrate P supplied by the substrate supply device 2, and processing is performed by the processing devices U1 to Un.
  • the substrate recovery apparatus 4 that recovers the processed substrate P and the host controller 5 that controls each device of the device manufacturing system 1 are provided.
  • the substrate supply device 2 is rotatably mounted with a supply roll FR1.
  • the substrate supply apparatus 2 includes a driving roller DR1 that sends out the substrate P from the mounted supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction).
  • the driving roller DR1 rotates while sandwiching both front and back surfaces of the substrate P, and feeds the substrate P to the processing apparatuses U1 to Un by feeding the substrate P in the transport direction from the supply roll FR1 to the collection roll FR2.
  • the edge position controller EPC1 sets the substrate P so that the position at the end (edge) in the width direction of the substrate P is within the range of about ⁇ 10 ⁇ m to about ⁇ 10 ⁇ m with respect to the target position.
  • the position of the substrate P in the width direction is corrected by moving P in the width direction.
  • the substrate collection device 4 is rotatably mounted with a collection roll FR2.
  • the substrate recovery apparatus 4 includes a driving roller DR2 that draws the processed substrate P toward the recovery roll FR2, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction).
  • the substrate collection device 4 rotates while sandwiching the front and back surfaces of the substrate P by the driving roller DR2, pulls the substrate P in the transport direction, and rotates the collection roll FR2, thereby winding the substrate P.
  • the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the end portion (edge) in the width direction of the substrate P does not vary in the width direction. .
  • the processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2.
  • a photosensitive functional liquid for example, a photoresist, a photosensitive silane coupling material (photosensitive lyophobic modifier, photosensitive plating reducing material, etc.), UV curable resin liquid, or the like is used.
  • the processing apparatus U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the transport direction of the substrate P.
  • the coating mechanism Gp1 includes a pressure drum roller R1 around which the substrate P is wound, and a coating roller R2 facing the pressure drum roller R1.
  • the coating mechanism Gp1 sandwiches the substrate P between the impression cylinder roller R1 and the application roller R2 in a state where the supplied substrate P is wound around the impression cylinder roller R1. Then, the application mechanism Gp1 applies the photosensitive functional liquid by the application roller R2 while rotating the impression cylinder roller R1 and the application roller R2 to move the substrate P in the transport direction.
  • the drying mechanism Gp2 blows drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on the substrate P.
  • the processing device U2 is a heating device that heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, about several tens to 120 ° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is.
  • the processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in order from the upstream side in the transport direction of the substrate P.
  • the heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air turn bars constitute a transport path for the substrate P.
  • the plurality of rollers are provided in rolling contact with the back surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P.
  • the plurality of rollers and the plurality of air turn bars are arranged to form a meandering transport path so as to lengthen the transport path of the substrate P.
  • the substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being transported along a meandering transport path.
  • the cooling chamber HA2 cools the substrate P to the environmental temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the environmental temperature of the subsequent process (processing apparatus U3).
  • the cooling chamber HA2 is provided with a plurality of rollers, and the plurality of rollers are arranged in a meandering manner in order to lengthen the conveyance path of the substrate P, similarly to the heating chamber HA1.
  • the substrate P passing through the cooling chamber HA2 is cooled while being transferred along a meandering transfer path.
  • a driving roller DR3 is provided on the downstream side in the transport direction of the cooling chamber HA2, and the driving roller DR3 rotates while sandwiching the substrate P that has passed through the cooling chamber HA2, thereby moving the substrate P toward the processing apparatus U3. Supply.
  • the processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a circuit for display or wiring on the substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface supplied from the processing apparatus U2. Exposure apparatus. Although details will be described later, the processing unit U3 illuminates the reflective cylindrical mask M (cylindrical drum 21) with an illumination light beam, and projects and exposes a projection light beam obtained by the illumination light beam being reflected by the mask M onto the substrate P. To do.
  • the processing apparatus U3 includes a driving roller DR4 that sends the substrate P supplied from the processing apparatus U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction).
  • the driving roller DR4 rotates while pinching both the front and back surfaces of the substrate P, and sends the substrate P to the downstream side in the transport direction, so that the drive roller DR4 is directed to a rotating drum (substrate support drum) 25 that stably supports the substrate P at the exposure position.
  • the edge position controller EPC3 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position.
  • the processing apparatus U3 includes a buffer unit DL having two sets of drive rollers DR6 and DR7 that send the substrate P to the downstream side in the transport direction in a state in which the substrate P after exposure is slackened.
  • the two sets of drive rollers DR6 and DR7 are arranged at a predetermined interval in the transport direction of the substrate P.
  • the drive roller DR6 rotates while sandwiching the upstream side of the substrate P to be transported, and the drive roller DR7 rotates while sandwiching the downstream side of the substrate P to be transported to direct the substrate P toward the processing apparatus U4. And supply.
  • the substrate P is provided with a slack, it is possible to absorb fluctuations in the conveyance speed that occur on the downstream side in the conveyance direction with respect to the driving roller DR7, so that the influence of the exposure processing on the substrate P due to the fluctuations in the conveyance speed is cut off. can do.
  • the processing apparatus U3 in order to relatively align (align) the image of a part of the mask pattern of the cylindrical mask M (hereinafter also simply referred to as the mask M) and the substrate P, it is formed in advance on the substrate P.
  • Alignment microscopes AMG1 and AMG2 are provided for detecting the alignment mark thus formed or a reference pattern formed on a part of the outer peripheral surface of the rotary drum (substrate support drum) 25.
  • the processing apparatus U4 is a wet processing apparatus that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing apparatus U3.
  • the processing apparatus U4 has three processing tanks BT1, BT2, BT3 hierarchized in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P therein.
  • the plurality of rollers are arranged so as to serve as a conveyance path through which the substrate P sequentially passes through the three processing tanks BT1, BT2, and BT3.
  • a driving roller DR8 is provided on the downstream side in the transport direction of the processing tank BT3, and the driving roller DR8 rotates while sandwiching the substrate P that has passed through the processing tank BT3, so that the substrate P is directed toward the processing apparatus U5. Supply.
  • the processing apparatus U5 is a drying apparatus which dries the board
  • the processing apparatus U5 removes droplets attached to the substrate P wet-processed in the processing apparatus U4 and adjusts the moisture content of the substrate P.
  • the substrate P dried by the processing apparatus U5 is further transferred to the processing apparatus Un through several processing apparatuses. Then, after being processed by the processing device Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery device 4.
  • the host control device 5 performs overall control of the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un.
  • the host control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 toward the substrate recovery device 4. Further, the host control device 5 controls the plurality of processing devices U1 to Un to perform various processes on the substrate P while synchronizing with the transport of the substrate P.
  • FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment.
  • FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG.
  • FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG.
  • FIG. 5 is a diagram showing a state of an illumination light beam irradiated on the mask and a projected light beam emitted from the mask.
  • the exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and projects a mask pattern image formed on the outer peripheral surface of the cylindrical mask M onto the surface of the substrate P while transporting the substrate P in the transport direction.
  • Exposure. 2 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other, and is an orthogonal coordinate system similar to that in FIG.
  • the mask M (cylindrical mask M in FIG. 1) used in the exposure apparatus U3 will be described.
  • the mask M is a reflective mask using, for example, a metal cylinder.
  • the pattern of the mask M is formed on a cylindrical base material having an outer peripheral surface (circumferential surface) having a curvature radius Rm centered on the first axis AX1 extending in the Y direction.
  • the circumferential surface of the mask M is a mask surface (first surface) P1 on which a predetermined mask pattern is formed.
  • the mask surface P1 includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency and a reflection suppression part (low reflection part) that does not reflect the light beam in the predetermined direction or reflects it with low efficiency.
  • the mask pattern is formed by a high reflection portion and a reflection suppression portion.
  • the reflection suppressing unit only needs to reflect less light in a predetermined direction.
  • the reflection suppressing unit can be made of a material that absorbs light, a material that transmits light, or a material that diffracts light in a direction other than a specific direction.
  • the exposure apparatus U3 can use a mask made of a cylindrical cylindrical base material made of metal such as aluminum or SUS as the mask M having the above configuration. Therefore, the exposure apparatus U3 can perform exposure using an inexpensive mask.
  • the mask M may be formed with all or part of the panel pattern corresponding to one display device, or may be formed with a panel pattern corresponding to a plurality of display devices.
  • the mask M has a multi-face pattern in which a plurality of panel patterns are repeatedly formed in the circumferential direction around the first axis AX1, or a plurality of small panel patterns in a direction parallel to the first axis AX1. It may be chamfered. Further, the mask M is a multi-face pattern of different size patterns in which a panel pattern for the first display device and a panel pattern for a second display device having a size different from that of the first display device are formed. Also good.
  • the mask M should just have the circumferential surface used as the curvature radius Rm centering on 1st axis
  • the mask M may be an arc-shaped plate having a circumferential surface.
  • the mask M may be a thin plate, or the thin plate mask M may be curved to have a circumferential surface.
  • the exposure apparatus U3 shown in FIG. 2 In addition to the driving rollers DR4, DR6, DR7, the substrate support drum 25, the edge position controller EPC3, and the alignment microscopes AMG1, AMG2, the exposure apparatus U3 includes a mask holding mechanism 11, a substrate support mechanism 12, and an illumination optical system IL. A projection optical system PL, and a low-order control device 16.
  • the exposure apparatus U3 illuminates the light emitted from the light source device 13 via the illumination optical system IL and a part of the projection optical system PL.
  • the mask holding drum 21 of the mask holding mechanism 11 (hereinafter also referred to as the cylindrical drum 21).
  • the lower-level control device 16 controls each part of the exposure apparatus U3 and causes each part to execute processing.
  • the lower level control device 16 may be a part or all of the higher level control device 5 of the device manufacturing system 1. Further, the lower level control device 16 may be a device controlled by the higher level control device 5 and different from the higher level control device 5.
  • the lower control device 16 includes, for example, a computer.
  • the mask holding mechanism 11 includes a cylindrical drum 21 that holds the mask M, and a first drive unit 22 that rotates the cylindrical drum 21.
  • the cylindrical drum 21 holds the mask M so as to be a cylinder having a radius of curvature Rm with the first axis AX1 of the mask M as the rotation center.
  • the first drive unit 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 around the first axis AX1.
  • the cylindrical drum 21 of the mask holding mechanism 11 directly forms a mask pattern with a high reflection portion and a low reflection portion on the outer peripheral surface thereof, but is not limited to this configuration.
  • the cylindrical drum 21 as the mask holding mechanism 11 may wind and hold a thin plate-like reflective mask M following the outer peripheral surface thereof. Further, the cylindrical drum 21 as the mask holding mechanism 11 may detachably hold a plate-shaped reflective mask M that is previously curved in an arc shape with a radius Rm on the outer peripheral surface of the cylindrical drum 21.
  • the substrate support mechanism 12 includes a substrate support drum 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support drum 25, a pair of air turn bars ATB1 and ATB2, and a pair of guide rollers 27 and 28.
  • the substrate support drum 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) having a curvature radius Rp with the second axis AX2 extending in the Y direction as the center.
  • the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing (including) the first axis AX1 and the second axis AX2 is a center plane CL.
  • a part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. That is, the substrate support drum 25 supports the substrate P stably by curving the substrate P into a cylindrical surface by winding the substrate P around the support surface P2.
  • the second drive unit 26 is connected to the lower control device 16 and rotates the substrate support drum 25 about the second axis AX2.
  • a pair of air turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side, respectively, in the transport direction of the substrate P with the substrate support drum 25 interposed therebetween.
  • the guide roller 27 guides the substrate P conveyed from the driving roller DR4 to the substrate support drum 25 via the air turn bar ATB1, and the guide roller 28 guides the substrate P conveyed from the air turn bar ATB2 via the substrate support drum 25. Guide to the drive roller DR6.
  • the substrate support mechanism 12 rotates the substrate support drum 25 by the second driving unit 26, thereby supporting the substrate P introduced into the substrate support drum 25 on the support surface P ⁇ b> 2 of the substrate support drum 25 and at a predetermined speed. Send in the scale direction (X direction).
  • the lower-level control device 16 connected to the first drive unit 22 and the second drive unit 26 rotates the cylindrical drum 21 and the substrate support drum 25 synchronously at a predetermined rotation speed ratio, thereby masking the mask M.
  • the projected image of the mask pattern formed on the surface P1 is continuously and repeatedly scanned and exposed on the surface of the substrate P (surface curved along the circumferential surface) wound around the support surface P2 of the substrate support drum 25.
  • the exposure apparatus U3, the first drive unit 22, and the second drive unit 26 serve as the moving mechanism of this embodiment. In the exposure apparatus U ⁇ b> 3 shown in FIG.
  • a portion upstream of the guide roller 27 in the transport direction of the substrate P serves as a substrate supply unit that supplies the substrate P to the support surface P ⁇ b> 2 of the substrate support drum 25.
  • the substrate supply unit may be directly provided with the supply roll FR1 shown in FIG.
  • a portion downstream of the guide roller 28 in the transport direction of the substrate P is a substrate recovery unit that recovers the substrate P from the support surface P ⁇ b> 2 of the substrate support drum 25.
  • the substrate collection unit may be directly provided with the collection roll FR2 shown in FIG.
  • the light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M.
  • the light source device 13 includes a light source 31 and a light guide member 32.
  • the light source 31 is a light source that emits light of a predetermined wavelength.
  • the light source 31 is, for example, a lamp light source such as a mercury lamp, a gas laser light source such as an excimer laser, a solid-state laser light source such as a laser diode or a light emitting diode (LED).
  • Illumination light emitted from the light source 31 can use, for example, ultraviolet emission lines (g-line, h-line, i-line) when using a mercury lamp, and KrF excimer laser light (wavelength 248 nm) when using an excimer laser light source.
  • Far ultraviolet light (DUV light) such as ArF excimer laser light (wavelength 193 nm) can be used.
  • the light source 31 emits the illumination light beam EL1 including a wavelength shorter than the i-line (365 nm wavelength).
  • laser light (wavelength 355 nm) emitted as the third harmonic of the YAG laser and laser light (wavelength 266 nm) emitted as the fourth harmonic of the YAG laser can also be used.
  • the light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL.
  • the light guide member 32 includes an optical fiber or a relay module using a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 divides the illumination light beam EL1 from the light source 31 into a plurality, and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL.
  • the light guide member 32 of the present embodiment causes the illumination light beam EL1 emitted from the light source 31 to enter the polarization beam splitter PBS as light of a predetermined polarization state.
  • the polarizing beam splitter PBS is provided between the mask M and the projection optical system PL for incident illumination of the mask M, reflects a light beam that becomes S-polarized linearly polarized light, and transmits a light beam that becomes P-polarized linearly polarized light. To do. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes a linearly polarized light (S-polarized light). The light source device 13 emits a polarized laser having the same wavelength and phase to the polarization beam splitter PBS.
  • the light source device 13 uses a polarization plane preserving fiber as the light guide member 32 and maintains the polarization state of the laser light output from the light source device 13. Guide the light as it is.
  • the light beam output from the light source 31 may be guided by an optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 may polarize the randomly polarized light beam by the polarizing plate when the randomly polarized light beam is guided. Further, the light source device 13 may guide the light beam output from the light source 31 by a relay optical system using a lens or the like.
  • the exposure apparatus U3 of the first embodiment is an exposure apparatus assuming a so-called multi-lens system.
  • 3 is a plan view of the illumination area IR on the mask M held by the cylindrical drum 21 as viewed from the ⁇ Z side (the left figure of FIG. 3), and on the substrate P supported by the substrate support drum 25.
  • a plan view of the projection area PA from the + Z side (the right view of FIG. 3) is shown. 3 indicates the moving direction (rotating direction) of the cylindrical drum 21 and the substrate support drum 25.
  • the multi-lens type exposure apparatus U3 illuminates a plurality of (for example, six in the first embodiment) illumination areas IR1 to IR6 on the mask M with the illumination light beam EL1, respectively, and each illumination light beam EL1 corresponds to each illumination area IR1 to IR6.
  • a plurality of projection light beams EL2 obtained by being reflected by the projection are projected and exposed to a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment) on the substrate P.
  • the plurality of illumination areas IR1 to IR6 includes the first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5 on the mask M on the upstream side in the rotation direction across the center plane CL.
  • the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotation direction.
  • Each illumination region IR1 to IR6 is an elongated trapezoidal region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M.
  • each of the trapezoidal illumination areas IR1 to IR6 is an area where the short side is located on the center plane CL side and the long side is located outside.
  • the first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction.
  • the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at a predetermined interval in the axial direction.
  • the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction.
  • the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction.
  • the fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction.
  • the fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction.
  • the illumination areas IR1 to IR6 are overlapped so that the triangular portions of the hypotenuses of the trapezoidal illumination areas adjacent in the Y direction overlap each other when rotated in the circumferential direction (X direction) of the mask M. Is arranged).
  • the illumination areas IR1 to IR6 are trapezoidal areas, but may be rectangular areas.
  • the mask M has a pattern formation area A3 where a mask pattern is formed and a pattern non-formation area A4 where a mask pattern is not formed.
  • the pattern non-formation area A4 is a low reflection area (reflection suppression part) that hardly reflects the illumination light beam EL1, and is arranged so as to surround the pattern formation area A3 in a frame shape.
  • the first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width in the Y direction of the pattern formation region A3.
  • a plurality of (for example, six in the first embodiment) illumination optical systems IL are provided according to the plurality of illumination regions IR1 to IR6.
  • the illumination light beam EL1 from the light source device 13 is incident on each of the plurality of illumination optical systems (divided illumination optical systems) IL1 to IL6.
  • Each illumination optical system IL1 to IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 transmit the illumination light beam EL1 to the second to sixth illumination regions IR2. Lead to IR6.
  • the plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged (left side in FIG. 2) with the center plane CL interposed therebetween.
  • IL1, third illumination optical system IL3, and fifth illumination optical system IL5 are arranged.
  • the first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction.
  • the plurality of illumination optical systems IL1 to IL6 has the second illumination on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are disposed (right side in FIG. 2) with the center plane CL interposed therebetween.
  • An optical system IL2, a fourth illumination optical system IL4, and a sixth illumination optical system IL6 are arranged.
  • the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction.
  • the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction.
  • the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are arranged between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction.
  • the first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, and the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are from the Y direction. They are arranged symmetrically.
  • the illumination optical systems IL1 to IL6 will be described with reference to FIG. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.
  • the first illumination optical system IL1 hereinafter simply referred to as the illumination optical system IL
  • the illumination optical system IL Koehler-illuminates the illumination region IR on the mask M with the illumination light beam EL1 from the light source 31 of the light source device 13 so as to illuminate the illumination region IR (first illumination region IR1) with uniform illuminance.
  • the illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS.
  • the illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter wavelength plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.
  • the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field stop 55 in order from the incident side of the illumination light beam EL1.
  • the relay lens system 56 is provided on the first optical axis BX1.
  • the collimator lens 51 receives light emitted from the light guide member 32 and irradiates the entire surface on the incident side of the fly-eye lens 52.
  • the center of the exit side surface of the fly-eye lens 52 is disposed on the first optical axis BX1.
  • the fly-eye lens 52 generates a surface light source image obtained by dividing the illumination light beam EL1 from the collimator lens 51 into a number of point light source images.
  • the illumination light beam EL1 is generated from the surface light source image.
  • the exit-side surface of the fly-eye lens 52 on which the point light source image is generated is formed by various lenses from the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 of the projection optical system PL described later.
  • the reflecting surface of the first concave mirror 72 is arranged so as to be optically conjugate with the pupil plane on which it is located.
  • the optical axis of the condenser lens 53 provided on the emission side of the fly-eye lens 52 is disposed on the first optical axis BX1.
  • the condenser lens 53 superimposes light from each of a large number of point light source images formed on the emission side of the fly-eye lens 52 on the illumination field stop 55, and irradiates the illumination field stop 55 with a uniform illuminance distribution.
  • the illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination region IR shown in FIG. 3, and the center of the opening is arranged on the first optical axis BX1.
  • the relay lens system (imaging system) 56, polarization beam splitter PBS, and quarter wavelength plate 41 provided in the optical path from the illumination field stop 55 to the mask M allow the opening of the illumination field stop 55 to be illuminated on the mask M. Arranged in an optically conjugate relationship with the region IR.
  • the relay lens system 56 includes a plurality of lenses 56a, 56b, 56c, and 56d arranged along the first optical axis BX1, and converts the illumination light beam EL1 transmitted through the opening of the illumination field stop 55 into the polarization beam splitter PBS.
  • the illumination area IR on the mask M is irradiated through
  • a cylindrical lens 54 is provided on the exit side of the condenser lens 53 and adjacent to the illumination field stop 55.
  • the cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is a flat surface and the output side is a convex cylindrical lens surface.
  • the optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1.
  • the cylindrical lens 54 converges each principal ray of the illumination light beam EL1 that irradiates the illumination region IR on the mask M in the XZ plane and makes it parallel in the Y direction.
  • the polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL.
  • the polarization beam splitter PBS reflects a light beam that becomes S-polarized linearly polarized light at the wavefront dividing plane and transmits a light beam that becomes P-polarized linearly polarized light.
  • the illumination light beam EL1 incident on the polarization beam splitter PBS is linearly polarized light of S polarization
  • the illumination light beam EL1 is reflected by the wavefront dividing surface of the polarization beam splitter PBS, passes through the quarter wavelength plate 41, and is circularly polarized light.
  • the illumination area IR on the mask M is irradiated.
  • the projection light beam EL2 reflected by the illumination area IR on the mask M is again converted from circularly polarized light to linear P polarized light by passing through the quarter-wave plate 41, and is transmitted through the wavefront splitting surface of the polarizing beam splitter PBS to project optically. Head to the system PL.
  • the polarization beam splitter PBS preferably reflects most of the illumination light beam EL1 incident on the wavefront splitting surface and transmits most of the projection light beam EL2.
  • the polarization splitting characteristic at the wavefront splitting plane of the polarization beam splitter PBS is expressed by the extinction ratio, but the extinction ratio also changes depending on the incident angle of the light beam toward the wavefront splitting plane.
  • the design is made in consideration of the NA (numerical aperture) of the illumination light beam EL1 and the projection light beam EL2 so that the influence on the imaging performance is not a problem.
  • FIG. 5 exaggerates the behavior of the illumination light beam EL1 applied to the illumination region IR on the mask M and the projection light beam EL2 reflected by the illumination region IR in the XZ plane (plane perpendicular to the first axis AX1).
  • FIG. 5 the illumination optical system IL described above irradiates the illumination area IR of the mask M so that the principal ray of the projection light beam EL2 reflected by the illumination area IR of the mask M becomes telecentric (parallel system).
  • Each principal ray of the illumination light beam EL1 to be generated is intentionally non-telecentric in the XZ plane (plane perpendicular to the first axis AX1) and telecentric in the YZ plane (parallel to the center plane CL). .
  • Such a characteristic of the illumination light beam EL1 is given by the cylindrical lens 54 shown in FIG.
  • an intersection point Q2 (a line extending from the center point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 and a circle having a half radius Rm of the mask surface P1 (
  • the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that each principal ray of the illumination light beam EL1 passing through the illumination region IR is directed to the intersection point Q2 on the XZ plane.
  • each principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state (telecentric) parallel to a straight line passing through the first axis AX1, the point Q1, and the intersection point Q2 in the XZ plane.
  • the plurality of projection areas PA1 to PA6 on the substrate P are arranged in correspondence with the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P have the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 on the substrate P on the upstream side in the transport direction across the center plane CL.
  • the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P on the downstream side in the transport direction.
  • Each of the projection areas PA1 to PA6 is an elongated trapezoidal (rectangular) area having a short side and a long side extending in the width direction (Y direction) of the substrate P.
  • each of the trapezoidal projection areas PA1 to PA6 is an area where the short side is located on the center plane CL side and the long side is located outside.
  • the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction.
  • the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction.
  • the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction.
  • the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction.
  • the fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5 in the axial direction.
  • the fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction.
  • the triangular portions of the oblique sides of the trapezoidal projection area PA adjacent in the Y direction overlap with each other in the transport direction of the substrate P (overlapping). To be arranged).
  • the projection area PA has such a shape that the exposure amount in the area where the adjacent projection areas PA overlap is substantially the same as the exposure amount in the non-overlapping area.
  • the first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width in the Y direction of the exposure area A7 exposed on the substrate P.
  • the circumference from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is set to be substantially equal.
  • a plurality of projection optical systems PL (for example, six in the first embodiment) are provided according to the plurality of projection areas PA1 to PA6.
  • a plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems (divided projection optical systems) PL1 to PL6, respectively.
  • Each projection optical system PL1 to PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1 to PA6. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are second to sixth.
  • the plurality of projection optical systems PL1 to PL6 has a first projection optical system on the side (left side in FIG. 2) on which the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween.
  • PL1, a third projection optical system PL3, and a fifth projection optical system PL5 are arranged.
  • the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction.
  • the plurality of projection optical systems PL1 to PL6 has the second projection on the side (the right side in FIG.
  • the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction.
  • the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction.
  • the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are from the Y direction. They are arranged symmetrically.
  • the projection optical systems PL1 to PL6 will be described with reference to FIG. Since the projection optical systems PL1 to PL6 have the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.
  • the projection optical system PL projects an image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P.
  • the projection optical system PL includes the quarter-wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in order from the incident side of the projection light beam EL2 from the mask M.
  • the quarter-wave plate 41 and the polarization beam splitter PBS are also used as the illumination optical system IL.
  • the illumination optical system IL and the projection optical system PL share the quarter wavelength plate 41 and the polarization beam splitter PBS.
  • the projection light beam EL2 reflected by the illumination region IR enters a projection optical system PL in a telecentric state (in which each principal ray is parallel to each other).
  • the projection light beam EL2 that is circularly polarized light reflected by the illumination region IR is converted from circularly polarized light to linearly polarized light (P-polarized light) by the quarter wavelength plate 41, and then enters the polarization beam splitter PBS.
  • the projection light beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM.
  • the projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 converts the mask pattern image of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 into the first projection area on the substrate P. Project to PA1. Similarly, the projection optical modules LM of the second to sixth projection optical systems PL2 to PL6 have second to sixth illumination regions IR2 to IR2 illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the IR6 mask pattern is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.
  • the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern in the illumination region IR on the intermediate image plane P7, and at least an intermediate image formed by the first optical system 61.
  • a second optical system 62 for re-imaging a part of the image on the projection area PA of the substrate P, and a projection field stop 63 disposed on the intermediate image plane P7 on which the intermediate image is formed are provided.
  • the projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.
  • the first optical system 61 and the second optical system 62 are, for example, telecentric catadioptric optical systems obtained by modifying a Dyson system.
  • the first optical system 61 has its optical axis (hereinafter referred to as the second optical axis BX2) substantially orthogonal to the center plane CL.
  • the first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72.
  • the first deflecting member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4.
  • the first reflecting surface P3 is a surface that reflects the projection light beam EL2 from the polarization beam splitter PBS and causes the reflected projection light beam EL2 to enter the first concave mirror 72 through the first lens group 71.
  • the second reflecting surface P4 is a surface on which the projection light beam EL2 reflected by the first concave mirror 72 enters through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field stop 63.
  • the first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2.
  • the first concave mirror 72 is disposed on the pupil plane of the first optical system 61 and is set in an optically conjugate relationship with a number of point light source images generated by the fly-eye lens 52.
  • the projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the upper half field region of the first lens group 71.
  • the projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, passes through the lower half field of view of the first lens group 71, and enters the second reflective surface P4 of the first deflecting member 70.
  • the projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, passes through the focus correction optical member 64 and the image shift optical member 65, and enters the projection field stop 63.
  • the projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, the projection field stop 63 can be omitted when the shape of the opening of the illumination field stop 55 in the illumination optical system IL is a trapezoid similar to the substantial shape of the projection area PA.
  • the second optical system 62 has the same configuration as that of the first optical system 61, and is provided symmetrically with the first optical system 61 with the intermediate image plane P7 interposed therebetween.
  • the second optical system 62 has an optical axis (hereinafter referred to as a third optical axis BX3) that is substantially perpendicular to the center plane CL and parallel to the second optical axis BX2.
  • the second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82.
  • the second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6.
  • the third reflecting surface P5 is a surface that reflects the projection light beam EL2 from the projection field stop 63 and causes the reflected projection light beam EL2 to enter the second concave mirror 82 through the second lens group 81.
  • the fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 enters through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA.
  • the second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3.
  • the second concave mirror 82 is disposed on the pupil plane of the second optical system 62 and is set in an optically conjugate relationship with a number of point light source images formed on the first concave mirror 72.
  • the projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80, and enters the second concave mirror 82 through the upper half field region of the second lens group 81.
  • the projection light beam EL ⁇ b> 2 that has entered the second concave mirror 82 is reflected by the second concave mirror 82, passes through the lower half field of view of the second lens group 81, and enters the fourth reflecting surface P ⁇ b> 6 of the second deflecting member 80.
  • the projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in the illumination area IR is projected to the projection area PA at the same magnification ( ⁇ 1).
  • the focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63.
  • the focus correction optical member 64 adjusts the focus state of the mask pattern image projected onto the substrate P.
  • the focus correction optical member 64 is formed by superposing two wedge-shaped prisms in opposite directions (in the opposite direction in the X direction in FIG. 4) so as to form a transparent parallel plate as a whole. By sliding the pair of prisms in the direction of the slope without changing the distance between the faces facing each other, the thickness of the parallel plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA is finely adjusted.
  • the image shifting optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63.
  • the image shift optical member 65 adjusts the image of the mask pattern projected onto the substrate P so as to be movable in the image plane.
  • the image shifting optical member 65 is composed of a transparent parallel flat glass that can be tilted in the XZ plane of FIG. 4 and a transparent parallel flat glass that can be tilted in the YZ plane of FIG. By adjusting the respective tilt amounts of the two parallel flat glass plates, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.
  • the magnification correcting optical member 66 is disposed between the second deflection member 80 and the substrate P.
  • a concave lens, a convex lens, and a concave lens are arranged coaxially at predetermined intervals, the front and rear concave lenses are fixed, and the convex lens between them is moved in the optical axis (principal ray) direction. It is configured.
  • the mask pattern image formed in the projection area PA is isotropically enlarged or reduced by a small amount while maintaining a telecentric imaging state.
  • the optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projection light beam EL2.
  • the rotation correction mechanism 67 is a mechanism that slightly rotates the first deflection member 70 around an axis parallel to the Z axis by an actuator (not shown), for example.
  • the rotation correction mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 within the intermediate image plane P7 by the rotation of the first deflection member 70.
  • the polarization adjustment mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 around an axis orthogonal to the plate surface by an actuator (not shown), for example.
  • the polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter wavelength plate 41.
  • the projection light beam EL2 from the mask M is emitted from the illumination region IR in a telecentric state (each principal ray is parallel to each other), and the 1 ⁇ 4 wavelength plate 41 and the polarization are emitted.
  • the light enters the first optical system 61 through the beam splitter PBS.
  • the projection light beam EL2 incident on the first optical system 61 is reflected by the first reflecting surface (plane mirror) P3 of the first deflecting member 70 of the first optical system 61, passes through the first lens group 71, and is reflected by the first concave mirror 72. Reflected.
  • the projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflecting member 70, and the focus correction optical member 64 and the image shifter.
  • the light passes through the optical member 65 and enters the projection field stop 63.
  • the projection light beam EL2 that has passed through the projection field stop 63 is reflected by the third reflecting surface (planar mirror) P5 of the second deflecting member 80 of the second optical system 62, and then reflected by the second concave mirror 82 through the second lens group 81. Is done.
  • the projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected by the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80, and enters the magnification correcting optical member 66. .
  • the projection light beam EL2 emitted from the magnification correcting optical member 66 is incident on the projection area PA on the substrate P, and an image of the mask pattern appearing in the illumination area IR is projected to the projection area PA at the same magnification ( ⁇ 1). .
  • the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are relative to the center plane CL (or the optical axes BX2, BX3).
  • the first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80 are center plane CL (or light). An angle other than 45 ° is set with respect to the axes BX2, BX3).
  • the angle ⁇ ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 of the first deflecting member 70 is the straight line and center passing through the point Q1, the intersection point Q2, and the first axis AX1 in FIG.
  • the angle between the surface CL and the surface CL is ⁇ s °
  • the angle ⁇ ° (absolute value) with respect to the center plane CL (or the second optical axis BX2) of the fourth reflecting surface P6 of the second deflecting member 80 is a projection area PA related to the circumferential direction of the outer peripheral surface of the substrate support drum 25.
  • FIG. 6 is a perspective view showing a schematic configuration of the cylindrical drum 21 and the mask M formed on the outer peripheral surface thereof.
  • FIG. 7 is a development view showing a schematic configuration of the mask surface P1 when the outer peripheral surface of the cylindrical drum 21 is developed on a plane.
  • the mask M is a reflection-type thin sheet mask and is wound around the outer peripheral surface of the cylindrical drum 21, and the cylindrical drum 21 is formed of a metal cylindrical base material, and the reflective type is formed on the outer peripheral surface of the cylindrical base material.
  • the mask pattern can be applied either directly or directly, but for the sake of simplicity, the latter case will be described here.
  • the mask M formed on the mask surface P1 that is the outer peripheral surface (diameter ⁇ ) of the cylindrical drum 21 is composed of a pattern formation region A3 and a pattern non-formation region (light-shielding band region) A4. Composed.
  • the mask M shown in FIGS. 6 and 7 corresponds to the pattern formation region A3 projected onto the exposure region A7 on the substrate P in FIG.
  • the mask M (pattern formation region A3) is formed almost in the entire circumferential direction of the outer peripheral surface of the cylindrical drum 21, and the width (length) in the direction parallel to the first axis AX1 (Y direction) is L. Then, the length La of the outer peripheral surface of the cylindrical drum 21 is smaller than the length La in the direction parallel to the first axis AX1 (Y direction).
  • the mask M is not densely arranged over 360 ° of the outer peripheral surface of the cylindrical drum 21 but is provided with a blank portion 92 having a predetermined dimension in the circumferential direction. Accordingly, both ends in the circumferential direction of the blank portion 92 correspond to the end and start of the mask M (pattern formation region A3) in the scanning exposure direction.
  • shafts SF coaxial with the first axis AX1 are provided at both end surfaces of the cylindrical drum 21.
  • the shaft SF supports the cylindrical drum 21 via a bearing provided at a predetermined position in the exposure apparatus U3.
  • a contact type using a metal ball or needle or a non-contact type such as a static pressure gas bearing is used.
  • the cylindrical drum 21 (mask M) has an outer peripheral surface (mask surface P1) of the cylindrical drum 21 (mask M) in each end region outside the region of the mask M in the Y direction parallel to the first axis AX1.
  • An encoder scale for measuring the rotational angle position with high accuracy may be formed on the entire surface in the circumferential direction.
  • a scale disk engraved with an encoder scale for measuring the rotational angle position may be fixed coaxially with the shaft SF.
  • FIG. 7 shows a state in which the outer peripheral surface of the cylindrical drum 21 of FIG. 6 is cut along the cutting line 94 in the blank portion 92 and developed.
  • the direction orthogonal to the Y direction in a state where the outer peripheral surface is expanded is defined as the ⁇ direction.
  • the circumference ratio is ⁇ .
  • the length L in the Y direction parallel to the first axis AX1 of the mask M is formed by L ⁇ La with respect to the total length La in the direction parallel to the first axis AX1 of the mask surface P1. And is formed with a length Lb in the ⁇ direction.
  • the length obtained by subtracting the length Lb from the total circumferential length ⁇ of the mask surface P1 is the total dimension of the blank portion 92 in the ⁇ direction.
  • An alignment mark for aligning the mask M is also formed at each of the discrete positions in the Y direction in the blank portion 92.
  • the mask M shown in FIG. 7 is a mask for forming a pattern corresponding to one of display panels used in a liquid crystal display, an organic EL display, or the like.
  • a pattern formed on the mask M a pattern for forming an electrode or wiring for TFT for driving each pixel of the display screen of the display panel, a pattern of each pixel of the display screen of the display device, or a display device Color filters and black matrix patterns.
  • the mask M (pattern formation area A3) is arranged around the display screen area DPA on which a pattern corresponding to the display screen of the display panel is formed, and the display screen area DPA.
  • a peripheral circuit region TAB in which a pattern such as a circuit for driving is formed is provided.
  • the size of the display screen area DPA on the mask M corresponds to the size of the display portion of the display panel to be manufactured (inch size of diagonal length Le), but the projection optical system PL shown in FIGS.
  • the projection magnification is equal ( ⁇ 1)
  • the actual size (diagonal length Le) of the display screen area DPA on the mask M is the inch size of the actual display screen.
  • the display screen area DPA is a rectangle having a long side Ld and a short side Lc.
  • the aspect ratio 16: 9 is an aspect ratio of a screen used in a so-called high vision size (wide size).
  • An aspect ratio of 2: 1 is an aspect ratio of a screen called a scope size, and is an aspect ratio used for a 4K2K super high-definition size in a television image.
  • the screen size is the same (50 inches) and the aspect ratio is 2: 1
  • the long side Ld of the display screen area DPA is about 113.6 cm and the short side Lc is about 56.8 cm.
  • the direction of the long side Ld of the display screen area DPA is It is preferable to arrange them in the ⁇ direction (circumferential direction of the cylindrical drum 21). This is because the length La of the cylindrical drum 21 in the direction of the first axis AX1 is not increased too much without reducing the diameter ⁇ of the cylindrical drum 21. Therefore, an example of the size (Lb ⁇ L) of the mask M including the width dimension of the peripheral circuit region TAB will be given.
  • the width dimension of the peripheral circuit area TAB varies depending on the circuit configuration, the total of the widths in the Y direction of the peripheral circuit area TAB located at both ends in the Y direction of the display screen area DPA in FIG.
  • the total of the width in the ⁇ direction of the peripheral circuit area TAB located at both ends in the ⁇ direction of the display screen area DPA is 10% of the length Ld in the Y direction of the display screen area DPA, As a percentage.
  • the long side Lb of the mask M is 121.76 cm and the short side L is 68.49 cm. Since the size of the blank portion 92 in the ⁇ direction is zero or more, the diameter ⁇ of the cylindrical drum 21 is 38.76 cm or more from the calculation of ⁇ ⁇ Lb / ⁇ . Therefore, in order to scan and expose a 50-inch display panel pattern having an aspect ratio of 16: 9 onto the substrate P, the diameter La is 38.76 mm or more, and the length La is parallel to the first axis AX1 of the mask surface P1.
  • the cylindrical drum 21 having a short side L (68.49 cm) or more is required.
  • the ratio L / ⁇ between the diameter ⁇ and the short side L of the mask M is about 1.77.
  • the total width in the ⁇ direction of the peripheral circuit area TAB is 20% of the length Ld in the ⁇ direction of the display screen area DPA
  • the long side Lb of the mask M is 132.83 cm
  • the diameter ⁇ of the cylindrical drum 21 is 42.28 cm or more
  • the ratio L / ⁇ between the diameter ⁇ and the short side L of the mask M is about 1.62.
  • the long side Lb of the mask M is 124.96 cm, and the short side L is 62.48 cm.
  • the diameter ⁇ of the cylindrical drum 21 is 39.78 cm or more from the calculation of ⁇ ⁇ Lb / ⁇ . Therefore, in order to scan and expose a 50-inch display panel pattern with an aspect ratio of 2: 1 onto the substrate P, the diameter La is 39.78 cm or more and the length La is parallel to the first axis AX1 of the mask surface P1. Requires a cylindrical drum 21 having a short side L (62.48 cm) or more.
  • the ratio L / ⁇ between the diameter ⁇ and the short side L of the mask M is about 1.57.
  • the total width in the ⁇ direction of the peripheral circuit area TAB is 20% of the length Ld in the ⁇ direction of the display screen area DPA
  • the long side Lb of the mask M is 136.31 cm
  • the diameter ⁇ of the cylindrical drum 21 is 43.39 cm or more
  • the ratio L / ⁇ between the diameter ⁇ and the short side L of the mask M is about 1.44.
  • the length of the mask M in the Y direction orthogonal to the scanning exposure direction falls within the range of 1.3 ⁇ L / ⁇ ⁇ 3.8.
  • the arrangement of the mask M shown in FIG. 7 is rotated by 90 ° in FIG. 7 so that the long side Lb of the mask M is in the Y direction and the short side L is in the ⁇ direction, it is out of the above relationship.
  • the width of the peripheral circuit area TAB in the ⁇ direction is 10% of the length Ld of the display screen area DPA
  • the long side Lb of the mask M is 121. Since the short side L is 68.49 cm, the minimum value of the length L in the direction parallel to the first axis AX1 of the mask surface P1 is Lb (121.76 cm), and the diameter ⁇ of the cylindrical drum 21 is From the calculation of ⁇ ⁇ L / ⁇ , it is 21.80 cm or more. Therefore, the ratio Lb / ⁇ between the diameter ⁇ and the length Lb of the mask M in the direction parallel to the first axis AX1 is about 5.59.
  • the long side Lb of the mask M is 124.96 cm and the short side L is 62.48 cm, so that it is parallel to the first axis AX1 of the mask surface P1.
  • the minimum value of the length L in this direction is Lb (124.96 cm), and the diameter ⁇ of the cylindrical drum 21 is 19.89 cm or more from the calculation of ⁇ ⁇ L / ⁇ . Therefore, the ratio Lb / ⁇ between the diameter ⁇ and the length Lb of the mask M in the direction parallel to the first axis AX1 is about 6.28.
  • the length of the cylindrical drum 21 in the direction parallel to the first axis AX1 is doubled, leading to a further increase in the number of projection optical systems PL (illumination optical systems IL) arranged in the Y direction.
  • the ratio L / ⁇ (or Lb / ⁇ ) is small, one is that the length of the mask M on the cylindrical drum 21 in the direction parallel to the first axis AX1 is small, for example, 6 in FIG.
  • the situation is such that only about half of the projection areas PA1 to PA6 are used, and the other is that the diameter ⁇ of the cylindrical drum 21 is too large, and the blank portion 92 shown in FIGS. The situation is such that the dimensions are larger than necessary.
  • the mask on which the pattern for the display panel is formed is obtained by setting the dimensional condition of the outer shape of the cylindrical drum (mask holding drum) 21 to a relationship of 1.3 ⁇ L / ⁇ ⁇ 3.8. Precise exposure work using M can be performed efficiently, and productivity can be increased.
  • the mask M having the pattern for one display panel is carried on the outer peripheral surface (mask surface P ⁇ b> 1) of the cylindrical drum (mask holding drum) 21.
  • a pattern for a plurality of display panels may be formed on the mask surface P1.
  • FIG. 8 is a development view showing a schematic configuration when three masks M1 of the same size are arranged in the circumferential direction ( ⁇ direction) of the cylindrical drum 21 on the mask surface P1.
  • FIG. 9 is a developed view showing a schematic configuration when four masks M2 of the same size are arranged in the circumferential direction ( ⁇ direction) of the cylindrical drum 21 on the mask surface P1. 10 rotates the mask M2 shown in FIG. 9 by 90 °, arranges two masks M2 in the Y direction on the mask surface P1, and arranges two sets in the circumferential direction ( ⁇ direction) of the cylindrical drum 21. It is an expanded view which shows schematic structure in the case of doing. In the example shown in FIGS.
  • each display panel of the same size is exposed on the substrate P during one rotation of the cylindrical drum 21 (three or four in this case). Called M. Further, as shown in FIG. 8, the entire region on the mask surface P1 to be scanned and exposed on the substrate P via the projection optical system PL is set as a mask M in accordance with FIG.
  • a mask M1 (M2 in FIGS. 9 and 10) to be a panel is arranged with a predetermined interval Sx in the scanning exposure direction ( ⁇ direction).
  • Each mask M1 (M2 in FIGS. 9 and 10) includes a display screen area DPA having a diagonal length Le and a peripheral circuit area TAB surrounding the same, as in FIG.
  • the largest rectangle is a mask surface P ⁇ b> 1 that is the outer peripheral surface of the cylindrical drum 21.
  • the mask surface P1 has a length ⁇ in the ⁇ direction over a rotation angle from 0 ° to 360 ° when the cutting line 94 is the origin in the ⁇ direction, and is long in the Y direction parallel to the first axis AX1.
  • a region indicated by a broken line inside the mask surface P1 is a mask M corresponding to the entire region to be exposed on the substrate P (exposure region A7 in FIG. 3).
  • the three masks M1 arranged in the ⁇ direction in the mask M are arranged so that the long side direction of the display screen area DPA is the Y direction and the short side direction is the ⁇ direction.
  • alignment marks (mask marks) 96 for specifying the position of the mask M (or M1) on the cylindrical drum 21 are provided at three positions in the Y direction. Discretely provided. These mask marks 96 are detected through a mask alignment optical system (not shown) disposed at a predetermined position in the circumferential direction of the cylindrical drum 21 so as to face the outer peripheral surface (mask surface P1). Based on the position of each mask mark 96 detected by the mask alignment optical system, the exposure apparatus U3 determines the positional deviation in the rotational direction ( ⁇ direction) and the positional deviation in the Y direction for the entire cylindrical drum 21 or each mask M1. Measure.
  • the exposure apparatus determines on which position on the substrate P the pattern of the mask M (or M1) has been exposed.
  • An alignment mark (substrate mark) for identification is transferred onto the substrate P together with the mask M (or M1).
  • such a substrate mark 96a is formed at each of the three positions separated in the ⁇ direction on both end portions in the Y direction of each mask M1.
  • the area on the mask (or the substrate P) occupied by the substrate mark 96a is about several mm as the width in the Y direction.
  • the length L in the Y direction of the mask M on the mask surface P1 to be exposed on the substrate P is the dimension in the Y direction of each mask M1 and the substrate mark 96a secured on both sides of each mask M1 in the Y direction. It is the sum total of the dimension of the area
  • Px is a total length of the dimension in the ⁇ direction of each mask M1 and the dimension in the Y direction of each interval Sx. It becomes.
  • FIG. 7 when the mask M corresponding to a single display panel is arranged, it is preferable to provide a margin 92 having a predetermined length. However, as shown in FIG. 8, an interval Sx is provided in the ⁇ direction.
  • the length of the blank portion 92 in the ⁇ direction can be made zero.
  • the length of each mask M1 in the ⁇ direction is naturally determined by the size of the display panel, and the minimum dimension required as the interval Sx is also determined in advance. ⁇ should be set.
  • the range of the diameter ⁇ of the cylindrical drum 21 that can be mounted on the exposure apparatus U3 is generally determined, it can be adjusted by changing (increasing) the dimension of the interval Sx.
  • the diagonal length Le of the display screen area DPA of the mask M1 is 32 inches (81.28 cm), and each dimension in the Y direction and ⁇ direction of the peripheral circuit area TAB is about 10% of the dimension of the display screen area DPA.
  • the dimension in the Y direction of the region where the substrate mark 96a is to be formed is 0.5 cm (1 cm on both sides).
  • the short side dimension of the mask M1 is 48.83 cm and the long side dimension is 77.93 cm.
  • the short side dimension of the mask M1 is 43.83 cm.
  • the long side dimension is 79.97 cm.
  • both the display panel mask M1 having an aspect ratio of 16: 9 and the display panel mask M1 having an aspect ratio of 2: 1 can be arranged on the mask surface P1 of the cylindrical drum 21 having the same diameter.
  • the diameter ⁇ of the cylindrical drum 21 is preferably about 43 cm.
  • the interval Sx between the masks M1 may be set to 1.196 cm, and in the display panel having an aspect ratio of 2: 1, the interval Sx between the masks M1 may be set to 5.045 cm.
  • the length L in the Y direction of the mask M on the mask surface P1 is the sum of the Y direction dimension of the mask M1 and the Y direction dimension (1 cm) of the formation region of the substrate mark 96a, an aspect ratio of 16: 9 is displayed.
  • L 78.93 cm
  • L 80.97 cm.
  • L / ⁇ 1.88.
  • the ratio L / ⁇ is in the range of 1.3 to 3.8.
  • the spacing Sx on the substrate P is set.
  • the exposure apparatus U3 in preparation for the case where the diameter ⁇ of the cylindrical drum 21 (mask M) to be mounted on the exposure apparatus U3 changes, the exposure apparatus U3 has about 1/2 of the difference of the diameter ⁇ .
  • a mechanism for shifting the position of the first axis AX1 in the Z direction is provided.
  • the first axis AX1 (shaft SF) of the cylindrical drum 21 is supported by being shifted by about 1.835 cm in the Z direction.
  • the cylindrical lens 54 shown in FIG. 4 has a curvature of the convex cylindrical surface that satisfies the illumination condition as shown in FIG.
  • the polarization beam splitter PBS and the quarter-wave plate 41 are entirely small in the XZ plane. You also need to tilt.
  • the mask M (including the three masks M1) formed on the cylindrical drum 21 as shown in FIG. 8 includes a plurality of display panel patterns (masks M1) transferred onto the substrate P.
  • a substrate mark 96a is provided in the ⁇ direction (scanning exposure direction). Therefore, if the plurality of substrate marks 96a are sequentially transferred onto the substrate P together with the display panel pattern (mask M1) by the exposure apparatus U3, various problems during exposure can be confirmed.
  • the position of a defect for example, dust adhesion
  • a mask patterning error, focus error, overlay exposure is performed.
  • Various offset errors such as overlay errors can be measured. In addition to managing the entire mask, the measured offset error is used for position management of each mask M1 on the cylindrical mask 21 and position management (correction) of each display panel pattern (mask M1) transferred onto the substrate P. Used.
  • FIG. 9 for example, four masks M2 for a display panel having an aspect ratio of 2: 1 are arranged on the mask surface P1 of the cylindrical drum 21 so as to be arranged in the ⁇ direction so that the Y direction is the long side of the display screen area DPA.
  • An interval Sx is provided on the side (long side) in the ⁇ direction of each mask M2, and the mask mark 96 and the substrate mark 96a are also provided in the same manner as in FIG.
  • the total width in the ⁇ direction of the peripheral circuit area TAB is 10% of the length of the display screen area DPA in the ⁇ direction
  • the peripheral circuit area TAB is 20% of the length in the Y direction
  • the total width in the Y direction of the formation region of the substrate mark 96a disposed at each of both ends in the Y direction of the mask M2 is 1 cm.
  • the total length L in the Y direction of the mask M for exposure on the mask surface P1 is the mask M2 and the substrate mark 96a.
  • L 66.43 cm.
  • the mask M2 shown in FIG. 9 is rotated by 90 °, and the long sides are arranged in the ⁇ direction, and two in the ⁇ direction and two in the Y direction are arranged on the mask surface P1.
  • An example of the case is shown.
  • the total width in the Y direction of the formation region of the substrate mark 96a is 2 cm
  • the total length (short side) L in the Y direction of the mask M formed on the mask surface P1 is 61.98 cm
  • ⁇ of the mask M The total length (long side) ⁇ in the direction is 132.86 cm
  • the diameter ⁇ of the mask M (cylindrical mask 21) is 42.29 cm or more
  • the ratio L / ⁇ is 1.47.
  • display device mask patterns may be arranged on the mask surface P1 according to various arrangement rules.
  • a plurality of mask patterns (masks M1 and M2) of display panels of various sizes are arranged as shown in FIGS.
  • the mask pattern can be arranged in a state where the gap (interval Sx) is reduced.
  • the cylindrical drum 21 satisfies the relationship of 1.3 ⁇ L / ⁇ ⁇ 3.8, thereby suppressing an increase in the size of the apparatus while suppressing an increase in the number of illumination optical systems IL and projection optical systems PL. be able to. That is, it is possible to prevent the cylindrical drum 21 from becoming elongated and increasing the number of illumination optical systems IL and projection optical systems PL. Moreover, it can suppress that the diameter (phi) of the cylindrical drum 21 becomes large and the dimension of the Z direction of an apparatus becomes large.
  • the aspect ratio as the mask M increases in a further expanding direction and the total width of the peripheral circuit area TAB adjacent to the short side of the screen display area DPA is the length of the screen display area DPA. It is assumed that it is about 20% of the side Ld. It is assumed that the total width of the peripheral circuit area TAB adjacent to the long side of the screen display area DPA is about 0 to 10% of the short side Lc of the screen display area DPA. Under such an assumption, when the screen display area DPA is a 50-inch display panel having an aspect ratio of 2: 1, the long side Ld of the screen display area DPA is 113.59 cm and the short side Lc is 56.8 cm.
  • the diameter ⁇ of the cylindrical drum 21 (mask M) is 43.39 cm
  • the ratio L / ⁇ of the length L to the diameter ⁇ is 1.30 to 1.44.
  • the aspect ratio of the screen display area DPA is 2: 1 and the mask M is increased by 20% including the width of the peripheral circuit area TAB only in the long side direction, the one-sided mask M as shown in FIG.
  • the ratio L / ⁇ becomes too large as described above.
  • the one-sided mask M is increased by 20% including the width of the peripheral circuit area TAB only in the long side direction.
  • L / Lb ( ⁇ ) 2.4 / 1 and the ratio L / ⁇ is 7.54.
  • the length L in the Y direction is 136.31 cm
  • the length Lb ( ⁇ ) in the ⁇ direction is 56.8 cm.
  • the diameter ⁇ of 21 (mask M) is 18.1 cm.
  • the ratio L / ⁇ varies greatly depending on whether the long side direction of the mask M is the ⁇ direction or the Y direction.
  • two masks M2 for a display panel having an aspect ratio of 2: 1 are as shown in FIG.
  • the screen display area DPA (2: 1) is 50 inches
  • the diameter ⁇ is 36.16 cm
  • the length L (La) is 136.31 cm.
  • the mask is so arranged that the short side direction of the screen display area DPA is oriented in the circumferential direction ( ⁇ direction) of the cylindrical drum 21 and the long side direction is oriented in the direction of the first axis AX1 (Y direction) of the cylindrical drum 21.
  • the ratio L / ⁇ can be made 3.8 or less by arranging two or more same masks M2 in the ⁇ direction. If n masks M2 shown in FIG. 11 are arranged in the ⁇ direction under the same conditions, the relational expression representing the above ratio L / ⁇ is as follows.
  • the mask surface P1 has a ratio L / ⁇ by arranging three masks M1 and M2 of the mask pattern for the display panel device as shown in FIG. 8 or four as shown in FIG. Can be arranged smaller than 3.8.
  • the value of the ratio L / ⁇ is obtained from the relational expression when n masks M1 and M2 having the longitudinal direction in the Y direction are arranged in the ⁇ direction.
  • the vertical and horizontal dimensions of the masks M1 and M2 also vary depending on the width of the peripheral circuit area TAB around the display screen area DPA. Therefore, the mask is enlarged by the peripheral circuit area TAB on both sides (or one side) in the longitudinal direction of the display screen area DPA.
  • the magnification of the dimension in the longitudinal direction of M1 and M2 is e1, and the magnification of the dimension in the lateral direction of the masks M1 and M2 enlarged by the peripheral circuit area TAB on both sides (or one side) of the display screen area DPA in the lateral direction. Let e2.
  • the ratio L / ⁇ is expressed by the following relational expression.
  • L / ⁇ e1 ⁇ ⁇ ⁇ Asp ⁇ Lc / n (e2 ⁇ Lc + Sx)
  • e2 1.0.
  • the ratio L / ⁇ is 2.23.
  • the aspect ratio of the mask area of the entire four-chamfer arrangement in which the mask M2 (24 inches) is arranged in 2 rows and 2 columns is directed to the long side direction of the display screen area DPA in the ⁇ direction. If the aspect ratio of the single-sided mask M (50 inches) is substantially the same, the cylindrical drum 21 having the same dimensions can be formed only by the difference in the size of the terminal portion of the peripheral circuit area TAB or the difference in the spacing Sx. It becomes possible.
  • the masks M, M1, and M2 for the display panel are efficiently used.
  • the relationship between the length L of the cylindrical drum (cylindrical mask) 21 in the direction (Y direction) orthogonal to the scanning exposure direction ( ⁇ direction) and the diameter ⁇ is 1. It is preferable to satisfy 3 ⁇ L / ⁇ ⁇ 3.8.
  • the aspect ratio of the single masks M, M1, and M2 is close to 2: 1, when arranging a plurality of these masks by multi-chamfering, the entire mask area on the mask surface P1 occupied by multi-chamfering is used.
  • the aspect ratio (L: Lb) is preferably close to 1: 1. Further, it is preferable that the interval Sx (or the blank portion 92) is constant.
  • the relationship between the diameter ⁇ of the outer peripheral surface (mask surface P1) of the cylindrical drum 21 and the total length L (La) in the direction of the first axis AX1 of the mask pattern formed on the mask surface P1 is 1.3 ⁇ L It is preferable to satisfy / ⁇ 3.8. Furthermore, when 1.3 ⁇ L / ⁇ ⁇ 2.6, the above-described effect can be preferably obtained. As an example, when the mask M2 is rotated 90 ° so that the longitudinal direction of the mask M2 shown in FIG. ⁇ 2.6.
  • the exposure apparatus U3 can replace the mask M (M1, M2).
  • the mask exchangeable various sizes of display panels or mask patterns for electronic circuit boards can be projected and exposed on the substrate P. Even if the number of masks (M, M1, M2, etc.) formed on the mask surface P1 of the cylindrical drum 21 is various, the gap (interval Sx) generated between the masks is made larger than necessary. None will happen. That is, it is possible to suppress a decrease in the ratio of the effective mask region (mask utilization rate) in the entire area of the mask surface P1.
  • the diameter ⁇ of the mask surface P1 of the cylindrical drum 21 and the length L of the mask region in the direction (Y direction) orthogonal to the scanning exposure direction are substantially the same. It is preferable to be replaceable. Thereby, only the mask M (M1, M2) is exchanged, and adjustment of the projection optical system PL and the illumination optical system IL on the exposure apparatus U3 side or other parts such as the distance between the substrate P and the mask surface P1 is unnecessary. Alternatively, an extremely small adjustment amount can be used, and patterns of various devices can be transferred with the same image quality even after mask replacement.
  • the device masks (M1, M2) having various numbers of chamfering numbers and different arrangement directions are arranged on the mask surface P1.
  • devices having various numbers of surfaces may be arranged on the mask surface P1 with different diameters ⁇ of the cylindrical drum 21.
  • the shape of the cylindrical mask surface P1 satisfy the relationship of 1.3 ⁇ L / ⁇ ⁇ 3.8, a plurality of mask patterns can be formed on the mask surface P1 with a small gap. Can be arranged. Thereby, the pattern of the device (display panel) can be efficiently transferred onto the substrate P.
  • the cylindrical mask by the cylindrical drum 21 into a shape satisfying the relationship of 1.3 ⁇ L / ⁇ ⁇ 3.8, the device patterns of various sizes can be obtained while reducing the gap between the plurality of device patterns. Can be arranged efficiently, and the change in the diameter ⁇ of the cylindrical mask can be reduced.
  • the number of attachment surfaces of the masks M1 and M2 is two, three, four, or more depending on the size of the display panel (device) to be manufactured. Can do.
  • the size of the gap (interval Sx) can be further reduced.
  • the cylindrical drum 21 satisfies 1.3 ⁇ L / ⁇ ⁇ 3.8 so that the width of the scanning exposure direction ( ⁇ direction) of the illumination area IR or the projection area PA with respect to the roll diameter (diameter ⁇ ).
  • the so-called exposure slit width can be optimized (increased).
  • the relationship between the diameter ⁇ of the mask surface P1 of the cylindrical drum 21 and the exposure slit width in the scanning exposure direction will be described with reference to FIG.
  • FIG. 12 is a graph simulating the relationship between the diameter ⁇ of the cylindrical drum 21 (mask surface P1) and the exposure slit width D while changing the defocus amount.
  • the vertical axis represents the exposure slit width D [mm], which represents the width of the projection area PA (FIG. 3) formed on the substrate P in the ⁇ direction (X direction).
  • the vertical axis represents the diameter ⁇ [mm] of the cylindrical drum 21 (mask surface P1).
  • the defocus amount is defined by the numerical aperture NA on the image side (substrate P side) of the projection optical system PL of the exposure apparatus U3, the wavelength ⁇ of illumination light for exposure, and the process constant k (k ⁇ 1). It is determined based on the depth of focus DOF.
  • the simulation was performed for the case where the deviation amount (defocus amount) in the focus direction between the best focus surface of the projection image and the surface of the substrate P was 25 ⁇ m and 50 ⁇ m.
  • the numerical aperture NA of the projection optical system PL is 0.0875
  • the wavelength ⁇ of the illumination light is 365 nm of the i-line of the mercury lamp
  • the process constant k is about 0.5.
  • DOF k ⁇ ⁇ / NA 2
  • a width of about 50 ⁇ m (about ⁇ 25 ⁇ m to +25 ⁇ m) is obtained.
  • 2.5 ⁇ mL / S can be obtained.
  • a focus deviation of about 1 ⁇ 2 of the depth of focus DOF occurs within the exposure slit width D, and at the time of defocusing by 50 ⁇ m indicated by a solid line.
  • This is a state in which a focus deviation of the depth of focus DOF occurs within the slit width D. That is, the graph at the time of 25 ⁇ m defocusing indicated by a broken line shows the diameter ⁇ in the case where 1 ⁇ 2 of the width of the focal depth DOF (25 ⁇ m in width) is allowed as an error due to the curvature of the mask surface P1 of the cylindrical drum 21.
  • the graph of the relationship between the exposure slit width D and the 50 ⁇ m defocus shown by the solid line is the diameter ⁇ when the depth of the DOF is allowed as an error due to the curvature of the mask surface P1 of the cylindrical drum 21.
  • the relationship of the exposure slit width D is shown.
  • the maximum value of the exposure slit width D when the defocus amount ⁇ Z is allowed up to 25 ⁇ m is about 7.1 mm, and the defocus amount ⁇ Z is allowed up to 50 ⁇ m.
  • the maximum value of the exposure slit width D is about 10.0 mm.
  • the exposure slit width D that satisfies the allowable defocus amount increases.
  • the mask M2 as shown in FIG. 11 in which the aspect ratio of the display screen area DPA is 2: 1 and the peripheral circuit area TAB is provided only in the longitudinal direction of the display screen area DPA, only one surface of the mask M2 is the cylindrical drum 21. If the mask portion P2 is formed on the entire circumference of the mask surface P1 without creating the blank portion 92 (interval Sx), the longitudinal direction of the mask M2 is set to the circumferential direction ( ⁇ direction) of the cylindrical drum 21 or the first axis AX1. The ratio L / ⁇ varies greatly depending on the direction (Y direction).
  • the short direction of the mask M2 is the Y direction
  • the total circumferential length ⁇ in the ⁇ direction of one surface of the mask M2 is 1.2 ⁇ Ld
  • the length L in the Y direction of the mask is set within the total dimension in the Y direction of the projection areas PA1 to PA6 (FIG. 3) of the projection optical system PL of the exposure apparatus U3, the length L is constant.
  • the ratio L / ⁇ changes from 1.3 to 7.5 by about 6 times, it means that the diameter ⁇ of the cylindrical drum 21 changes by about 6 times.
  • the exposure slit width D when the allowable defocus amount ⁇ Z is 25 ⁇ m changes from about 3.9 mm when ⁇ 150 mm to about 9.5 mm when ⁇ 900 mm.
  • the exposure slit width D is reduced to about 40% when the cylindrical mask having a diameter ⁇ of 900 mm is changed to a cylindrical mask having a diameter ⁇ of 150 mm. .
  • the allowable defocus amount ⁇ Z is 50 ⁇ m.
  • the exposure amount given to the substrate P is simply 40%. It will decrease. In order to set the exposure amount given to the substrate P to an appropriate value (100%), it is about 40 with respect to the moving speed of the substrate P at the time of exposure by the projection area PA set as the exposure slit width D of 9.5 mm.
  • the substrate P is moved at a speed of%. That is, since the transport speed of the substrate P itself is reduced to about 40%, the throughput (productivity) becomes half or less.
  • the brightness of the projection image in the projection area PA that is, the illuminance of the illumination light beam EL1 is set so as not to decrease the transport speed of the substrate P. It is conceivable to increase. In that case, the illuminance of the illumination light beam EL1 that irradiates the mask surface P1 needs to be about 2.5 times the illuminance when the exposure slit width D is 9.5 mm.
  • the ratio L / ⁇ is set within a range (1.3 to 3.8) of about 3.8 (1.2 ⁇ ⁇ ) or less. Can do.
  • the transport speed of the substrate P can be reduced to about 60%.
  • the aspect ratio (L: ⁇ ) of the mask region formed on the mask surface P1 of the cylindrical drum 21 is limited so that the ratio L / ⁇ is about 1.3 to about 3.8.
  • a change in the exposure slit width D can be suppressed.
  • the diameter ⁇ of the cylindrical drum 21 is 700 mm, for example.
  • the exposure slit width D at a defocus amount of 25 ⁇ m decreases from about 9.5 mm when the diameter ⁇ is 900 mm to about 8.4 mm. This corresponds to a reduction of the throughput to about 88%, but is significantly improved as compared to the case where the throughput is reduced to half or less as in the previous example, and exposure with substantially no loss is possible.
  • the illuminance of the illumination light beam EL1 can be easily increased by increasing the emission intensity of the light source 31 or increasing the number of light sources. , It can eliminate the decrease in throughput. It can be seen that the throughput becomes constant as the size of the mask region approaches a constant value. That is, the size (L ⁇ ⁇ ) of the mask area is constant by properly using one chamfering of the mask M and multiple chamfering of the mask M1 and the mask M2 according to the screen size (diagonal length Le) of the display image area DPA. It can be a cylindrical drum 21 (the diameter ⁇ does not change), and the throughput is kept constant.
  • the range of the ratio L / ⁇ is about 1.3 to about 3.8.
  • the exposure apparatus U3 of the present embodiment is capable of distorting the projected image caused by the projection error due to the cylindrical surface, or changing the projected image surface due to the arc (focus shift). ), A plurality of mask patterns for the display panel (device) can be transferred side by side on the substrate P with a small gap.
  • FIGS. 13 shows the case of a single chamfering of the mask M with the ⁇ direction as the longitudinal direction, as in FIG. 7, and FIG. 14 shows the mask M2 with the Y direction as the longitudinal direction, as in FIG. A case of two chamfering in which two are arranged in the ⁇ direction is shown.
  • FIG. 13 shows a case where a display panel mask M having a diagonal length Le (inches) of the display screen area DPA is arranged in the orientation in which the long side is in the ⁇ direction, as in FIG. 7.
  • the ratio of the long side dimension Ld to the short side dimension Lc (Ld / Lc) of the display screen area DPA is the aspect ratio Asp
  • the entire mask M including the peripheral circuit area TAB around the display screen area DPA is cylindrical.
  • e1 indicates how much the longitudinal direction of the mask M is relative to the longitudinal direction of the display screen area DPA depending on the total width of the peripheral circuit area TAB attached to both sides or one side of the display screen area DPA in the longitudinal direction. This is an enlargement magnification representing whether to enlarge.
  • e2 indicates that the short direction of the mask M is short of the display screen area DPA depending on the total width (Ta in FIG. 13) of the peripheral circuit area TAB attached to both sides or one side of the display screen area DPA. This is an enlargement magnification representing how much the image is enlarged with respect to the hand direction.
  • the minimum required size as the outer peripheral surface (mask surface P1) of the cylindrical drum 21 is ⁇ ⁇ L
  • the ratio L / ⁇ between the length L and the diameter ⁇ of the mask M at this time is It is expressed as follows.
  • L / ⁇ ⁇ ⁇ e2 / e1 ⁇ Asp
  • the ratio L / ⁇ is ⁇ / 1.2 ⁇ Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / ⁇ is ⁇ / 2.4 ⁇ 1.3, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / ⁇ is ⁇ / 2.134 ⁇ 1.47.
  • FIG. 14 shows a case of two chamfers in which two masks M2 having the long side direction of the display screen area DPA in the Y direction are arranged in the ⁇ direction, as in FIG. 11, and the aspect ratio Asp, the magnifications e1, e2 Is the same as in FIG.
  • the ratio L / ⁇ is 0.6 ⁇ ⁇ Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / ⁇ is about 3.8, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / ⁇ is about 3 .4.
  • the size (number of inches) of the display panel (device) arranged on the cylindrical mask surface P1 the aspect ratio Asp of the display screen area DPA, the width of the peripheral circuit area TAB, and the like are determined, based on them.
  • FIG. 7 or FIG. 13 a case where a mask M having the long side direction of the display screen area DPA in the ⁇ direction is chamfered on the mask surface P1 of the cylindrical drum 21 is used as a reference for comparison.
  • the projection optical system PL of the exposure apparatus U3 projects the mask pattern onto the substrate P at the same magnification. Therefore, an actual display panel and an actual size mask pattern are formed on the mask surface P1 of the cylindrical drum 21.
  • the display screen area DPA of the display panel is a high-vision size (aspect ratio 16: 9) and a 60-inch screen.
  • the short side dimension Lc of the display screen area DPA is 74.7 cm
  • the long side dimension Ld is 132.8 cm
  • the diagonal length Le is 152.4 cm.
  • the length in the ⁇ direction of the blank portion 92 shown in FIG. 6 or 7 is set to 5.0 cm.
  • the dimension ⁇ in the ⁇ direction of the mask surface P1 is 164.4 cm. Therefore, the diameter ⁇ of the cylindrical drum 21 needs to be 52.33 cm or more, and is set to 52.5 cm, for example. Further, the length in the Y direction of the entire mask M under the above conditions is 85.9 cm. However, since this mask M is used as a reference, the projection areas PA1 to PA6 of the projection optical systems PL1 to PL6 of the exposure apparatus U3 are used. It is assumed that the total width in the Y direction of the exposure region in which is connected in the Y direction is slightly larger than 85.9 cm and 87 cm. Here, from the simulation result shown in FIG.
  • the exposure slit width D when the allowable defocus amount is 25 ⁇ m is 7.4 mm.
  • the exposure slit width D is 10.3 mm. Therefore, when the substrate P is scanned and exposed using the reference mask M (cylindrical drum 21) shown in FIG. 13, the exposure slit width D is 7.4 mm or less, or 10.3 mm or less. (The moving speed of the substrate P, the illuminance of the illumination light beam EL1, etc.) are optimized.
  • the illumination slit width D (the width of the projection area PA in the scanning exposure direction) has a predetermined value of 7.4 mm or less.
  • the opening of the field stop 55 or the opening of the projection field stop 63 in the projection optical system PL is adjusted.
  • the long side dimension Ld of the display screen area DPA is 70.8 cm
  • the short side dimension Lc is 39.9 cm.
  • the magnification e1 by the peripheral circuit area TAB adjacent to both sides or one side in the longitudinal direction of the display screen area DPA is about 1.2 (20% increase)
  • the dimension in the ⁇ direction of the mask M3 is increased by about 15 cm
  • the margin portion 92 of about 5 cm is provided in the ⁇ direction
  • the total length of 90.8 cm which is the sum of the dimension in the ⁇ direction of the mask M3 and the dimension of the blank portion 92, is the total circumference length. If the diameter ⁇ of the cylindrical drum 21 is changed, the diameter ⁇ may be at least 28.91 cm. Therefore, if a cylindrical drum 21 having a diameter ⁇ of 29 cm is prepared as the cylindrical drum 21 for the mask M3, the allowable defocus amount ⁇ Z is 25 ⁇ m from the simulation result of FIG. Is about 5.4 mm, and when the allowable defocus amount ⁇ Z is 50 ⁇ m, it is about 7.6 mm.
  • the exposure slit width D (7.4 mm or 10.3 mm) set for the standard cylindrical drum 21.
  • the exposure slit width D was set to 10.3 mm (allowable defocus amount 50 ⁇ m) so as to obtain an appropriate exposure amount.
  • the moving speed of the substrate P is V1.
  • the exposure slit width D is 7.6 mm (allowable).
  • the substrate processing of the production line Overall, the speed is reduced by almost 25%. Even when the allowable defocus amount ⁇ Z is 25 ⁇ m, the productivity is reduced to the same extent.
  • cylindrical mask (cylindrical drum 21) in which a mask M3 for a 32-inch display panel having an aspect ratio of 16: 9 is chamfered in the arrangement as shown in FIG. 14 will be described with reference to FIG.
  • the long side dimension Ld of the display screen area DPA is 70.8 cm
  • the short side dimension Lc is 39.9 cm.
  • the enlargement magnification e1 in the longitudinal direction (Y direction) of the mask M3 by the peripheral circuit region TAB is about 1.2 and the enlargement magnification e2 in the short direction ( ⁇ direction) is about 1.15
  • the Y of the mask M3 The length L in the direction increases by about 15 cm to 85.8 cm, and the length Lg of the mask M3 in the ⁇ direction increases by about 6 cm to 45.9 cm.
  • the length in the ⁇ direction of the entire mask region including the two masks M3 and the two intervals Sx is 2 (Lg + Sx), it is 110.8 cm. Accordingly, the diameter ⁇ of the cylindrical drum 21 in this case may be about 35.3 cm. Further, the length L in the Y direction of the mask surface P1 on the cylindrical drum 21 is at least 85.8 cm. This length L (85.8 cm) is just within the range of 87 cm of the entire width in the Y direction of the exposure area set by the reference cylindrical drum 21 (the total length of the projection areas PA1 to PA6 in the Y direction).
  • the pattern of the mask M3 can be efficiently exposed on the substrate P by being mounted on the exposure apparatus U3.
  • FIG. 16 is a developed view showing a schematic configuration of another example in which two masks M3 for the 32-inch display panel shown in FIG. 15 are chamfered.
  • the direction dimension L is 91.8 cm (2 ⁇ 45.9 cm).
  • This length L (91.8 cm) does not fall within the range of 87 cm of the entire width in the Y direction of the exposure region set by the reference cylindrical drum 21 (the total length of the projection regions PA1 to PA6 in the Y direction). That is, the two chamfers obtained by rotating the same mask M3 as in FIG. 15 by 90 ° cannot be arranged on the mask surface P1 of the reference cylindrical drum 21.
  • FIG. 17 is a developed view showing a schematic configuration of another example in which the mask M3 for the 32-inch display panel shown in FIG. 15 is chamfered.
  • one of the masks M3 having the same dimensions as in FIG. 15 is arranged so that the short direction of the display screen area DPA is the ⁇ direction, and the interval Sx of the blank portion 92 in the ⁇ direction is 10 cm. To do.
  • Such an arrangement of the mask M3 is inefficient because the area occupied by the standard cylindrical drum 21 with respect to the mask surface P1 is extremely small. Therefore, assuming a cylindrical drum 21 having a size suitable for the one-sided mask M3 as shown in FIG.
  • the total circumferential length ⁇ of the cylindrical drum 21 is a dimension Lg (45.9 cm) in the ⁇ direction of the mask M3.
  • the size (10 cm) of the blank portion 92 (Sx), ⁇ 55.9 cm. Therefore, since the diameter ⁇ of the cylindrical drum 21 is 17.8 cm or more, it is considered as 18 cm.
  • the length L in the Y direction of the mask M3 is 85.8 cm as in FIG. 15, so the ratio L / ⁇ is about 4.77.
  • the mask M3 can be efficiently arranged on the mask surface P1, but the throughput ( Productivity) decreases.
  • the diameter of the mask surface P1 is 18.0 cm
  • the exposure slit width D when the allowable defocus amount ⁇ Z is 25 ⁇ m is about 4.3 mm, and the allowable defocus amount ⁇ Z is 50 ⁇ m.
  • the exposure slit width D is about 6.0 mm.
  • the moving speed V2 of the substrate P is reduced according to the narrowing of the exposure slit width D with respect to the moving speed V1 of the substrate P when the standard cylindrical mask (cylindrical drum 21) is used.
  • V2 (4.3 / 7.4) V1
  • V2 (6.0 / 10.3) V1.
  • the throughput is reduced to about 58% compared to the case of using a standard cylindrical mask.
  • FIG. 18 The arrangement of the mask M3 in FIG. 18 is a three-chamfer pattern similar to that in FIG.
  • the dimension in the ⁇ direction of the blank portion 92 (Sx) adjacent to the long side of each of the three masks M3 and the interval Sx is 9 cm
  • the dimension Lg in the short side direction of the mask M3 is 45.9 cm. Therefore, the length of the entire mask region in the ⁇ direction is 164.7 cm from 3 (Lg + Sx).
  • the dimension L in the Y direction of the mask area is 85.8 cm, which is within the total width 87 cm of the exposure area (projection areas PA1 to PA6) in the Y direction.
  • the mask M3 can be efficiently arranged only by adjusting the size of the blank portion 92 and the interval Sx. Therefore, when the mask M3 is chamfered as shown in FIG. 18, the standard cylindrical mask size ( ⁇ ⁇ L) can be used as it is, so that the throughput does not decrease.
  • the ratio L / ⁇ is about 1.63, and 1.3 ⁇ L / ⁇ ⁇ 3.8, which is considered to be an efficient production.
  • the display screen area DPA may be a high-vision size 65-inch screen with an aspect ratio of 16: 9.
  • the diagonal length Le of the display screen area DPA arranged as shown in FIG. 13 is 165.1 cm
  • the short side Lc extending in the Y direction is 80.9 cm
  • the long side Ld extending in the ⁇ direction is 143.9 cm. .
  • a blank portion 92 is provided adjacent to the ⁇ direction.
  • the dimension (Sx) in the ⁇ direction is 5 cm
  • the dimension in the ⁇ direction of the mask surface P1 is about 178 cm
  • the diameter ⁇ is It becomes 56.7 cm or more.
  • the exposure apparatus U3 that can be mounted with the 65-inch cylindrical mask as a reference mask has a full width (projection) in the Y direction of the exposure region.
  • Six projection optical systems PL in which the dimensions in the Y direction of the projection area PA are changed so that the total width in the Y direction of the areas PA1 to PA6 is, for example, 95.0 cm are provided.
  • the long side Ld (Y direction) of the 37-inch display screen area DPA is 81.9 cm
  • the short side Lc ( ⁇ direction) is 46.1 cm
  • the magnification e1 in the long side direction and the short side
  • the mask M4 has a long side dimension L (e1 ⁇ Ld) of about 94.2 cm and a short side dimension Lg (e2 ⁇ Lc) of about 53. 0 cm.
  • the arrangement may be the same as that shown in FIG.
  • the diameter ⁇ of the cylindrical mask (cylindrical drum 21) when the two surfaces of the mask M4 are efficiently arranged in the circumferential direction is 37.6 cm or more.
  • the ratio L / ⁇ is about 2.5 ( ⁇ 94.2 / 37.6).
  • the exposure slit width D is about 6 mm when the allowable defocus amount ⁇ Z is 25 ⁇ m and when the allowable defocus amount ⁇ Z is 50 ⁇ m from the simulation of FIG. It is about 8.6 mm.
  • the allowable defocus amount ⁇ Z is 25 ⁇ m and 50 ⁇ m.
  • the productivity (moving speed of the substrate P) is about 80%.
  • the illuminance of the illumination light beam EL1 can be increased by about 20% compared to the exposure with the reference cylindrical mask, no substantial reduction in productivity occurs.
  • the exposure apparatus U3 of this embodiment projected the mask pattern of the cylindrical mask (cylindrical drum 21) on the board
  • the exposure apparatus U3 adjusts the configuration of the projection optical system PL, the peripheral speed of the cylindrical mask (cylindrical drum 21), the moving speed of the substrate P, etc., enlarges the pattern of the mask M at a predetermined magnification, and projects it onto the substrate P.
  • the image may be projected on the substrate P after being reduced at a predetermined magnification.
  • the longitudinal direction of the rectangular display screen area DPA is set to the Y direction.
  • the cylindrical mask (cylindrical drum 21) is configured as follows.
  • a mask pattern is formed along a cylindrical surface (P1) having a constant radius (Rm) from the center line (AX1), and is a cylindrical mask mounted on an exposure apparatus so as to be rotatable around the center line.
  • a rectangular mask region (masks M1 to M4) for the display panel is formed by arranging n (n ⁇ 2) pieces at intervals Sx in the circumferential direction ( ⁇ direction) of the cylindrical surface.
  • the dimension L in the direction (Y direction) is e1 times the long side dimension Ld of the display screen area (enlargement magnification e1 ⁇ 1), and the dimension in the short side direction ( ⁇ direction) of the mask area is the short side of the display screen area.
  • the length ⁇ is set to n (e 2 ⁇ Lc + Sx), and further, the diameter ⁇ and the number of the numbers so that the ratio of the dimension L to the diameter ⁇ is in the range of 1.3 ⁇ L / ⁇ ⁇ 3.8. n, the interval Sx is set.
  • FIG. 20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment.
  • the exposure apparatus U3 of the first embodiment is configured to hold the substrate P that passes through the projection region by the cylindrical substrate support drum 25.
  • the exposure apparatus U3a of the second embodiment has a configuration in which 1 in the XY plane.
  • the substrate P is held in a planar shape by the substrate support mechanism 12a that can move in two dimensions. Therefore, the substrate P in the present embodiment may be not only a single sheet substrate based on a flexible resin (PET, PEN, etc.) but also a thin glass substrate.
  • the substrate support mechanism 12a includes a substrate stage 102 having a support surface P2 that holds the substrate P in a planar shape, and the substrate stage 102 in the X direction within a plane orthogonal to the center plane CL. And a moving device (not shown) for scanning and moving along the line.
  • the support surface P2 of the substrate P in FIG. 20 is a plane substantially parallel to the XY plane (a plane orthogonal to the center plane CL), it is reflected from the mask M and is projected into the projection optical module PLM (projection optical systems PL1 to PL6).
  • the principal ray of the projection light beam EL2 that passes through and is projected onto the substrate P is set to be perpendicular to the XY plane.
  • the projection magnification of the projection optical module PLM is equal ( ⁇ 1), similarly to FIG. 2, the odd-numbered illumination on the mask M when viewed in the XZ plane.
  • the circumferential distance CCM from the center point of the region IR1 (and IR3, IR5) to the center point of the even-numbered illumination region IR2 (and IR4, IR6) is an odd-numbered projection region on the substrate P following the support surface P2.
  • the distance CCP in the X direction (scanning exposure direction) from the center point of PA1 (and PA3, PA5) to the center point of the even-numbered second projection area PA2 (and PA4, PA6) is set substantially equal. .
  • the lower order control device 16 controls the moving device (linear motor for scanning exposure, actuator for fine movement, etc.) of the substrate support mechanism 12a, and the cylindrical drum 21 holding the cylindrical mask M is controlled.
  • the substrate stage 102 is driven in synchronism with the rotation. Therefore, the movement position of the substrate stage 102 in the X direction and the Y direction is accurately measured by a laser interferometer for length measurement or a linear encoder, and the rotational position of the cylindrical drum 21 is precisely measured by a rotary encoder.
  • the support surface P2 of the substrate stage 102 may be constituted by a suction holder that vacuum-sucks and electrostatically sucks the substrate P during scanning exposure, or a static pressure gas bearing is provided between the support surface P2 and the substrate P. It may be formed of a bale-nuis type holder that is formed and supports the substrate P in a non-contact state or a low friction state.
  • the substrate P is a flexible long sheet substrate (web), and the substrate P is moved in the X direction while applying tension in the X direction (and Y direction) to the substrate P. Therefore, the substrate stage 102 (bale / Nui holder) does not need to be moved in the X and Y directions, and the support surface P2 may be an area that covers the projection areas PA1 to PA6. The size of 102 can be reduced. Also, in the case of a bale / nuis type holder, if the substrate P is a long sheet substrate, scanning exposure can be performed while continuously moving the substrate P in the longitudinal direction. Compared to the case of the suction holder that requires additional time, it is more suitable for the production of the roll-to-roll method.
  • the cylindrical drum 21 that holds the mask M (M1 to M4) in a cylindrical shape is also used.
  • the shape condition (L / ⁇ ) satisfies the relationship described in the first embodiment, the mask patterns of the display panels of various sizes can be efficiently arranged and exposed on the substrate P. A reduction in productivity can be suppressed.
  • FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment.
  • the exposure apparatus U3a of the second embodiment is configured to use a reflective mask in which the light reflected by the mask becomes the projection light beam EL2, but the exposure apparatus U3b of the third embodiment uses the light transmitted through the mask as the projection light beam. It is configured to use a transmission type mask that becomes EL2.
  • the mask holding mechanism 11a includes a cylindrical drum (mask holding drum) 21a that holds the mask MA in a cylindrical shape, a guide roller 93 that supports the mask holding drum 21a, and a mask holding drum 21a.
  • Drive roller 98 and drive unit 99 are included in the exposure apparatus U3b of the third embodiment.
  • the mask holding drum 21a forms a mask surface (P1) on which the illumination area IR on the mask MA is arranged.
  • the cylindrical surface is, for example, an outer peripheral surface of a cylinder, an outer peripheral surface of a column, or the like.
  • the mask holding drum 21a is made of, for example, glass or quartz and is formed as an annular transparent cylinder having a certain thickness, and its outer peripheral surface (cylindrical surface) forms a mask surface.
  • the mask MA is created as a transmission type planar sheet mask in which a pattern is formed with a light-shielding layer such as chromium on one surface of a strip-like ultrathin glass plate (for example, a thickness of 100 to 500 ⁇ m) with good flatness, It is used in a state in which it is curved along the outer peripheral surface of the mask holding drum 21a and wound (attached) around this outer peripheral surface.
  • the mask MA has a pattern non-formation region where no pattern is formed, and is attached to the mask holding drum 21a in the pattern non-formation region (corresponding to the peripheral blank portion 92). Therefore, in this case, the mask MA can be attached to and detached from the mask holding drum 21a.
  • the outer peripheral surface of the mask holding drum 21a is directly covered with a light shielding layer such as chromium.
  • a mask pattern may be drawn and integrated.
  • the mask holding drum 21a functions as a support member (mask support member) of the mask MA.
  • the guide roller 93 and the driving roller 98 extend in the Y-axis direction parallel to the center line AX1 'of the mask holding drum 21a.
  • the guide roller 93 and the driving roller 98 are provided so as to circumscribe the end portion in the Y direction of the mask holding drum 21a, but not to contact the pattern formation region of the mask MA held on the mask holding drum 21a. Yes.
  • the drive roller 98 is connected to the drive unit 99.
  • the drive roller 98 transmits the torque supplied from the drive unit 99 to the mask holding drum 21a, thereby rotating the mask holding drum 21a around the central axis.
  • the light source device 13a of the present embodiment includes a light source (not shown) similar to that of the first embodiment and a plurality of illumination optical systems ILa (ILa1 to ILa6).
  • a part or all of each of the illumination optical systems ILa1 to ILa6 is disposed on the inner side of the mask holding drum 21a (annular transparent cylinder), and is on the mask MA held on the outer peripheral surface (mask surface P1) of the mask holding drum 21a.
  • the illumination areas IR1 to IR6 are illuminated from the inside.
  • Each illumination optical system ILa1 to ILa6 includes a fly-eye lens, a rod integrator, and the like, and illuminates each illumination region IR1 to IR6 with an illumination light beam EL1 with a uniform illuminance.
  • the light source may be arranged inside the mask holding drum 21a or may be arranged outside the mask holding drum 21a.
  • the light source may be installed separately from the exposure apparatus U3b and guided through a light guide unit such as an optical fiber or a relay lens.
  • the exposure apparatuses U3, U3a, U3b of the first, second, and third embodiments all have the mask pattern formed on the cylindrical mask surface P1 (cylindrical drum 21, mask holding drum 21a),
  • the projection exposure was performed on the substrate P through the projection optical module PLM (PL1 to PL6).
  • the transmission type cylindrical mask (MA) is used as in the third embodiment, the distance between the outer peripheral surface (mask surface P1) of the transmission type cylindrical mask and the surface of the substrate P to be exposed is constant.
  • the transmission type cylindrical mask (MA) and the substrate P are arranged close to each other so that the gap (several tens to several hundreds of ⁇ m) is maintained, and the substrate P is synchronously moved in one direction while rotating the transmission type cylindrical mask.
  • a proximity-type scanning exposure apparatus may be used.
  • the cylindrical mask (cylindrical drum 21, mask holding drum 21a) can be adapted to change the diameter ⁇ of the cylindrical mask.
  • a mechanism that can adjust the support position (Z position) of the lens, or a mechanism that adjusts the state of the optical elements in the illumination optical system IL and the projection optical system PL is provided.
  • the diameter ⁇ of the cylindrical mask to which the exposure apparatus can be mounted has a range from the minimum diameter ⁇ 1 to the maximum diameter ⁇ 2.
  • the shape dimensions of the cylindrical drum 21 and the mask holding drum 21a are preferably set so as to satisfy the relationship of ⁇ 1 ⁇ ⁇ ⁇ ⁇ 2 along with the relationship.
  • FIG. 22 is a flowchart showing a device manufacturing method by the device manufacturing system.
  • step S201 the function / performance design of a display panel using, for example, a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed using CAD or the like.
  • step S202 cylindrical masks for necessary layers are manufactured based on mask patterns for various layers designed by CAD or the like.
  • the cylindrical mask is such that the relationship between the diameter ⁇ and the length L (La) satisfies 1.3 ⁇ L / ⁇ ⁇ 3.8, and satisfies the conditions for mounting on the exposure apparatus, ⁇ 1 ⁇ ⁇ ⁇ ⁇ 2. To be produced.
  • a supply roll FR1 around which a flexible substrate P (resin film, metal foil film, plastic, etc.) serving as a display panel base material is wound is prepared (step S203).
  • the roll-shaped substrate P prepared in step S203 has a surface modified as necessary, a pre-formed base layer (for example, fine unevenness by an imprint method), and light sensitivity.
  • These functional films and transparent films (insulating materials) may be laminated in advance.
  • a backplane layer composed of electrodes, wiring, insulating films, TFTs (thin film semiconductors), etc. constituting the display panel device is formed on the substrate P, and the organic EL is stacked on the backplane layer.
  • a light emitting layer (display pixel portion) is formed by a self-luminous element such as (Step S204).
  • a photosensitive layer photoresist layer, photosensitive silane
  • U3, U3a, U3b described in the previous embodiments.
  • the substrate P is diced for each display panel device continuously manufactured on the long substrate P by a roll method, and a protective film (environmental barrier layer) or a color filter is formed on the surface of each display panel device.
  • a device is assembled by pasting sheets or the like (step S205).
  • an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Provided are a substrate processing apparatus, whereby high-quality substrates can be manufactured with high productivity, a device manufacturing method, and a mask. The present invention is provided with: a mask supporting member that supports a mask pattern such that the pattern is supported along a first surface that is curved in a cylindrical surface shape at a predetermined curvature in a lighting region; a substrate supporting member that supports the substrate such that the substrate is supported along a predetermined second surface in a projection region; and a drive mechanism, which rotates the mask supporting member such that the mask pattern moves in the predetermined scanning exposure direction, and which also moves the substrate supporting member such that the substrate moves in the scanning exposure direction. The mask supporting member satisfies formula of 1.3≤L/φ≤3.8, where a diameter of the first surface is represented by φ, and a first surface length in the direction orthogonal to the scanning exposure direction is represented by L.

Description

基板処理装置、デバイス製造方法及び円筒マスクSubstrate processing apparatus, device manufacturing method, and cylindrical mask
　本発明は、マスクのパターンを基板に投影し、該基板に該パターンを露光する基板処理装置、デバイス製造方法及びこれに用いる円筒マスクに関する。 The present invention relates to a substrate processing apparatus that projects a mask pattern onto a substrate, and exposes the pattern onto the substrate, a device manufacturing method, and a cylindrical mask used therefor.
　液晶ディスプレイ等の表示デバイスや、半導体等、各種デバイスを製造するデバイス製造システムがある。デバイス製造システムは、露光装置等の基板処理装置を備えている。特許文献１に記載の基板処理装置は、照明領域に配置されたマスクに形成されているパターンの像を、投影領域に配置されている基板等に投影し、基板に当該パターンを露光する。基板処理装置に用いられるマスクは、平面状のもの、円筒状のもの等がある。 There are device manufacturing systems for manufacturing various devices such as display devices such as liquid crystal displays and semiconductors. The device manufacturing system includes a substrate processing apparatus such as an exposure apparatus. The substrate processing apparatus described in Patent Document 1 projects an image of a pattern formed on a mask arranged in an illumination area onto a substrate or the like arranged in a projection area, and exposes the pattern on the substrate. Masks used in the substrate processing apparatus include planar ones and cylindrical ones.
特開２００７－２９９９１８号公報JP 2007-299918 A
　基板処理装置は、マスクを円筒形状としマスクを回転させることで、連続して基板に露光を行うことができる。また、基板処理装置としては、基板を長尺のシート状として連続的に投影領域の下に送り込むロール・ツー・ロール方式もある。このように、基板処理装置は、円筒形状のマスクを回転させ、かつ、基板の搬送方法として、ロール・ツー・ロール方式を用いることで、基板とマスクの両方を連続して搬送することができる。 The substrate processing apparatus can continuously expose the substrate by turning the mask into a cylindrical shape. In addition, as a substrate processing apparatus, there is a roll-to-roll method in which a substrate is continuously fed into a long sheet form below a projection region. Thus, the substrate processing apparatus can continuously transport both the substrate and the mask by rotating the cylindrical mask and using the roll-to-roll method as the substrate transport method. .
　ここで、基板処理装置は、通常、効率よく基板にパターンを露光し、生産性を向上することが求められる。マスクとして円筒マスクを用いる場合も同様である。 Here, the substrate processing apparatus is usually required to efficiently expose the pattern on the substrate and improve the productivity. The same applies when a cylindrical mask is used as the mask.
　本発明の態様は、高い生産性で高い品質の基板を生産することができる基板処理装置、デバイス製造方法及び円筒マスクを提供することを目的とする。 An object of an aspect of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and a cylindrical mask capable of producing a high-quality substrate with high productivity.
　本発明の第１の態様に従えば、照明光の照明領域に配置されるマスクのパターンからの光束を、基板が配置される投影領域に投射する投影光学系と、照明領域において所定曲率で円筒面状に湾曲した第１面に沿うように、マスクのパターンを支持するマスク支持部材と、投影領域において所定の第２面に沿うように基板を支持する基板支持部材と、マスクのパターンが所定の走査露光方向に移動するようにマスク支持部材を回転させ、かつ、基板が前記走査露光方向に移動するように基板支持部材を移動させる駆動機構とを備え、マスク支持部材は、第１面の直径をφとし、走査露光方向に直交する方向の第１面の長さをＬとした場合、１．３≦Ｌ／φ≦３．８である基板処理装置が提供される。 According to the first aspect of the present invention, a projection optical system that projects a light beam from a mask pattern arranged in an illumination area of illumination light onto a projection area where a substrate is arranged, and a cylinder with a predetermined curvature in the illumination area A mask support member for supporting the mask pattern along the first curved surface, a substrate support member for supporting the substrate along the predetermined second surface in the projection area, and the mask pattern are predetermined. A driving mechanism that rotates the mask support member so as to move in the scanning exposure direction and moves the substrate support member so that the substrate moves in the scanning exposure direction. When the diameter is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, a substrate processing apparatus satisfying 1.3 ≦ L / φ ≦ 3.8 is provided.
　本発明の第２の態様に従えば、第１の態様に記載の基板処理装置を用いて前記基板に前記マスクのパターンを形成することと、前記基板処理装置に前記基板を供給することと、を含むデバイス製造方法が提供される。 According to a second aspect of the present invention, forming the pattern of the mask on the substrate using the substrate processing apparatus according to the first aspect, supplying the substrate to the substrate processing apparatus, A device manufacturing method is provided.
　本発明の第３の態様に従えば、円筒状の外周面に沿って電子デバイス用のマスクパターンが形成され、中心線の回りに回転可能な円筒マスクであって、前記外周面の直径がφ、前記外周面の前記中心線の方向の長さがＬａとなるような円筒基材を有し、前記円筒基材の外周面に形成可能なマスクパターンの前記中心線の方向の最大の長さをＬとしたとき、Ｌ≦Ｌａの範囲で、前記直径φと前記長さＬの比率Ｌ／φが、１．３≦Ｌ／φ≦３．８の範囲に設定される円筒マスクが提供される。 According to the third aspect of the present invention, a mask pattern for an electronic device is formed along a cylindrical outer peripheral surface, and the cylindrical mask is rotatable around a center line, and the outer peripheral surface has a diameter of φ. The cylindrical base material has a length in the direction of the center line of the outer peripheral surface of La, and the maximum length in the direction of the central line of the mask pattern that can be formed on the outer peripheral surface of the cylindrical base material A cylindrical mask is provided in which the ratio L / φ of the diameter φ to the length L is set in the range of 1.3 ≦ L / φ ≦ 3.8 in the range of L ≦ La. The
　本発明の第４の態様に従えば、所定の中心線から一定半径の円筒面に沿ってマスクパターンが形成され、前記中心線の回りに回転可能に露光装置に装着される円筒マスクであって、前記円筒面には、長辺寸法Ｌｄ、短辺寸法Ｌｃ、アスペクト比ＡｓｐをＬｄ／Ｌｃとする表示画面領域と、その周辺に隣接して設けられる周辺回路領域とを含む表示パネル用の長方形のマスク領域が、前記円筒面の周方向に間隔Ｓｘを空けて、ｎ個（ｎ≧２）並べて形成され、前記マスク領域の長手方向の寸法Ｌを前記表示画面領域の長辺寸法Ｌｄのｅ１倍（ｅ１≧１）、前記マスク領域の短手方向の寸法を前記表示画面領域の短辺寸法Ｌｃのｅ２倍（ｅ２≧１）としたとき、前記円筒面の前記中心線の方向に関する長さは前記寸法Ｌ以上に設定されると共に、前記円筒面の直径をφ、円周率をπとしたとき、πφ＝ｎ（ｅ２・Ｌｃ＋Ｓｘ）に設定され、さらに、前記寸法Ｌと前記直径φとの比Ｌ／φが、１．３≦Ｌ／φ≦３．８の範囲になるように、前記直径φ、前記個数ｎ、前記間隔Ｓｘが設定される円筒マスクが提供される。 According to a fourth aspect of the present invention, there is provided a cylindrical mask in which a mask pattern is formed along a cylindrical surface having a constant radius from a predetermined center line and is mounted on an exposure apparatus so as to be rotatable around the center line. The cylindrical surface includes a display screen region having a long side dimension Ld, a short side dimension Lc, an aspect ratio Asp of Ld / Lc, and a peripheral circuit region provided adjacent to the periphery of the display screen region. Mask regions are formed in a row with a spacing Sx in the circumferential direction of the cylindrical surface, with n (n ≧ 2) arranged side by side, and the longitudinal dimension L of the mask region is set to e of the long side dimension Ld of the display screen region. When the dimension in the short direction of the mask region is set to e 2 times (e 2 ≧ 1) of the short side dimension Lc of the display screen region (e 1 ≧ 1), the center line of the cylindrical surface When the length in the direction is set to the dimension L or more, , The diameter of the cylindrical surface phi, when the pi [pi, is set to πφ = n (e 2 · Lc + Sx), further, the ratio L / phi between said dimension L the diameter phi is 1. A cylindrical mask is provided in which the diameter φ, the number n, and the spacing Sx are set so that 3 ≦ L / φ ≦ 3.8.
　本発明の態様によれば、マスク支持部材によって保持される円筒面状のマスク形状、又はマスクに形成されるパターンの円筒面状形状の直径φと長さＬの関係を上記範囲のように設定することで、高い生産性で効率的にデバイスパターンの露光や転写を行うことができる。また、直径φと長さＬの関係を上記範囲のようにすることで、表示パネル用のパターンの複数個を円筒マスクの周面に沿って並べる多面取りの場合も、色々な表示サイズのパネルを効率的に配置できる。 According to the aspect of the present invention, the relationship between the diameter φ and the length L of the cylindrical surface shape held by the mask support member or the cylindrical surface shape of the pattern formed on the mask is set within the above range. As a result, the device pattern can be efficiently exposed and transferred with high productivity. In addition, by making the relationship between the diameter φ and the length L within the above range, panels with various display sizes can be used even in the case of multi-planar arrangement in which a plurality of display panel patterns are arranged along the peripheral surface of the cylindrical mask. Can be arranged efficiently.
図１は、第１実施形態のデバイス製造システムの全体構成を示す図である。FIG. 1 is a diagram illustrating an overall configuration of a device manufacturing system according to the first embodiment. 図２は、第１実施形態の露光装置（基板処理装置）の全体構成を示す図である。FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. 図３は、図２に示す露光装置の照明領域及び投影領域の配置を示す図である。FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. 図４は、図２に示す露光装置の照明光学系及び投影光学系の構成を示す図である。FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. 図５は、円筒マスクに照射される照明光束の状態と、円筒マスクから生じる投影光束の状態とを示す図である。FIG. 5 is a diagram showing the state of the illumination light beam irradiated on the cylindrical mask and the state of the projected light beam generated from the cylindrical mask. 図６は、円筒マスクを構成する円筒ドラムとマスクの概略構成を示す斜視図である。FIG. 6 is a perspective view showing a schematic configuration of a cylindrical drum and a mask constituting the cylindrical mask. 図７は、円筒マスクのマスク面に表示パネル用のマスクを１面取りする場合の配置例を示す展開図である。FIG. 7 is a development view showing an arrangement example when one mask for the display panel is cut on the mask surface of the cylindrical mask. 図８は、円筒マスクのマスク面に同一サイズのマスクを一列に３つ並べて３面取りする配置例を示す展開図である。FIG. 8 is a development view showing an arrangement example in which three masks of the same size are arranged in a line on a mask surface of a cylindrical mask and three chamfers are formed. 図９は、円筒マスクのマスク面に同一サイズのマスクを一列に４つ並べて４面取りする配置例を示す展開図である。FIG. 9 is a development view showing an arrangement example in which four masks of the same size are arranged in a line on the mask surface of the cylindrical mask and the four surfaces are chamfered. 図１０は、円筒マスクのマスク面に同一サイズのマスクを２行２列で４面取りする配置例を示す展開図である。FIG. 10 is a development view showing an arrangement example in which four masks of the same size are taken in two rows and two columns on the mask surface of the cylindrical mask. 図１１は、アスペクト比２：１の表示パネル用のマスクの２面取りの配置例を説明する展開図である。FIG. 11 is a development view illustrating an example of a two-chamfer arrangement of a display panel mask having an aspect ratio of 2: 1. 図１２は、特定の許容デフォーカス量の下で、円筒マスクの直径と露光スリット幅との関係をシミュレーションしたグラフである。FIG. 12 is a graph simulating the relationship between the diameter of the cylindrical mask and the exposure slit width under a specific allowable defocus amount. 図１３は、６０インチ表示パネル用のマスクを１面取りする場合の具体例を示す展開図である。FIG. 13 is a developed view showing a specific example in the case of taking one face of a mask for a 60-inch display panel. 図１４は、マスクの２面取りの配置例を示す展開図である。FIG. 14 is a development view showing an example of a two-chamfer arrangement of a mask. 図１５は、３２インチ表示パネル用のマスクの２面取りの第１の配置例を示す展開図である。FIG. 15 is a development view showing a first arrangement example of a two-chamfer mask for a 32-inch display panel. 図１６は、３２インチ表示パネル用のマスクの２面取りの第２の配置例を示す展開図である。FIG. 16 is a development view showing a second arrangement example of a two-chamfer mask for a 32-inch display panel. 図１７は、３２インチ表示パネル用のマスクを１面取りする場合の具体例を示す展開図である。FIG. 17 is a developed view showing a specific example in the case of taking one mask for a 32-inch display panel. 図１８は、３２インチ表示パネル用のマスクの３面取りの具体的な配置例を示す展開図である。FIG. 18 is a developed view showing a specific arrangement example of three-chamfering of a mask for a 32-inch display panel. 図１９は、３７インチ表示パネル用のマスクの３面取りの具体的な配置例を示す展開図である。FIG. 19 is a development view showing a specific arrangement example of three-chamfering of a mask for a 37-inch display panel. 図２０は、第２実施形態の露光装置（基板処理装置）の全体構成を示す図である。FIG. 20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. 図２１は、第３実施形態の露光装置（基板処理装置）の全体構成を示す図である。FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. 図２２は、デバイス製造システムによるデバイス製造方法を示すフローチャートである。FIG. 22 is a flowchart showing a device manufacturing method by the device manufacturing system.
　本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成要素は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成要素の種々の省略、置換または変更を行うことができる。例えば、以下の実施形態では、デバイスとしてフレキシブル・ディスプレイを製造する場合として説明するがこれに限定されない。デバイスとしては、銅箔等による配線パターンが形成される配線基板、多数の半導体素子（トランジスタ、ダイオード等）が形成される基板等を製造することもできる。 DETAILED DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the components can be made without departing from the scope of the present invention. For example, although the following embodiment demonstrates as a case where a flexible display is manufactured as a device, it is not limited to this. As a device, a wiring board on which a wiring pattern made of copper foil or the like is formed, a board on which a large number of semiconductor elements (transistors, diodes, etc.) are formed, or the like can be manufactured.
［第１実施形態］
　第１実施形態は、基板に露光処理を施す基板処理装置が露光装置である。また、露光装置は、露光後の基板に各種処理を施してデバイスを製造するデバイス製造システムに組み込まれている。先ず、デバイス製造システムについて説明する。 [First Embodiment]
In the first embodiment, a substrate processing apparatus that performs exposure processing on a substrate is an exposure apparatus. The exposure apparatus is incorporated in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate. First, a device manufacturing system will be described.
＜デバイス製造システム＞
　図１は、第１実施形態のデバイス製造システムの構成を示す図である。図１に示すデバイス製造システム１は、デバイスとしてのフレキシブル・ディスプレイを製造するライン（フレキシブル・ディスプレイ製造ライン）である。フレキシブル・ディスプレイとしては、例えば有機ＥＬディスプレイ等がある。このデバイス製造システム１は、可撓性の基板Ｐをロール状に巻回した供給用ロールＦＲ１から、該基板Ｐを送り出し、送り出された基板Ｐに対して各種処理を連続的に施した後、処理後の基板Ｐを可撓性のデバイスとして回収用ロールＦＲ２に巻き取る、いわゆるロール・ツー・ロール（Ｒｏｌｌ　ｔｏ　Ｒｏｌｌ）方式となっている。第１実施形態のデバイス製造システム１では、フィルム状のシートである基板Ｐが供給用ロールＦＲ１から送り出され、供給用ロールＦＲ１から送り出された基板Ｐが、順次、ｎ台の処理装置Ｕ１、Ｕ２、Ｕ３、Ｕ４、Ｕ５、…Ｕｎを経て、回収用ロールＦＲ２に巻き取られるまでの例を示している。先ず、デバイス製造システム１の処理対象となる基板Ｐについて説明する。 <Device manufacturing system>
FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment. A device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. Examples of the flexible display include an organic EL display. The device manufacturing system 1 sends out the substrate P from the supply roll FR1 in which the flexible substrate P is wound in a roll shape, and continuously performs various processes on the delivered substrate P. A so-called roll-to-roll system is adopted in which the processed substrate P is wound around the collection roll FR2 as a flexible device. In the device manufacturing system 1 according to the first embodiment, the substrate P, which is a film-like sheet, is sent out from the supply roll FR1, and the substrates P sent out from the supply roll FR1 are sequentially supplied to n processing apparatuses U1, U2. , U3, U4, U5,... Un, and the example until being wound around the collecting roll FR2. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.
　基板Ｐは、例えば、樹脂フィルム、ステンレス鋼等の金属または合金からなる箔（フォイル）等が用いられる。樹脂フィルムの材質としては、例えば、ポリエチレン樹脂、ポリプロピレン樹脂、ポリエステル樹脂、エチレンビニル共重合体樹脂、ポリ塩化ビニル樹脂、セルロース樹脂、ポリアミド樹脂、ポリイミド樹脂、ポリカーボネート樹脂、ポリスチレン樹脂、酢酸ビニル樹脂のうち１または２以上を含んでいる。 For the substrate P, for example, a foil (foil) made of a resin or a metal such as stainless steel or an alloy is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Includes one or more.
　基板Ｐは、例えば、基板Ｐに施される各種処理において受ける熱による変形量が実質的に無視できるように、熱膨張係数が顕著に大きくないものを選定することが望ましい。熱膨張係数は、例えば、無機フィラーを樹脂フィルムに混合することによって、プロセス温度等に応じた閾値よりも小さく設定されていてもよい。無機フィラーは、例えば、酸化チタン、酸化亜鉛、アルミナ、酸化ケイ素等でもよい。また、基板Ｐは、フロート法等で製造された厚さ１００μｍ程度の極薄ガラスの単層体であってもよいし、この極薄ガラスに上記の樹脂フィルム、箔等を貼り合わせた積層体であってもよい。 As the substrate P, for example, it is desirable to select a substrate whose thermal expansion coefficient is not remarkably large so that the amount of deformation caused by heat in various processes applied to the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. The substrate P may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like, or a laminate in which the above resin film, foil, or the like is bonded to the ultrathin glass. It may be.
　このように構成された基板Ｐは、ロール状に巻回されることで供給用ロールＦＲ１となり、この供給用ロールＦＲ１が、デバイス製造システム１に装着される。供給用ロールＦＲ１が装着されたデバイス製造システム１は、１個のデバイスを製造するための各種の処理を、供給用ロールＦＲ１から送り出される基板Ｐに対して繰り返し実行する。このため、処理後の基板Ｐは、複数のデバイスが連なった状態となる。つまり、供給用ロールＦＲ１から送り出される基板Ｐは、多面取り用の基板となっている。尚、基板Ｐは、予め所定の前処理によって、その表面を改質して活性化したもの、或いは、表面に精密パターニングのための微細な隔壁構造（凹凸構造）をインプリント法等で形成したものでも良い。 The substrate P configured in this way becomes a supply roll FR1 by being wound in a roll shape, and this supply roll FR1 is mounted on the device manufacturing system 1. The device manufacturing system 1 to which the supply roll FR1 is mounted repeatedly executes various processes for manufacturing one device on the substrate P sent out from the supply roll FR1. For this reason, the processed substrate P is in a state where a plurality of devices are connected. That is, the substrate P sent out from the supply roll FR1 is a multi-sided substrate. In addition, the substrate P was modified and activated in advance by a predetermined pretreatment, or a fine partition structure (uneven structure) for precise patterning was formed on the surface by an imprint method or the like. Things can be used.
　処理後の基板Ｐは、ロール状に巻回されることで回収用ロールＦＲ２として回収される。回収用ロールＦＲ２は、図示しないダイシング装置に装着される。回収用ロールＦＲ２が装着されたダイシング装置は、処理後の基板Ｐを、デバイスごとに分割（ダイシング）することで、複数個のデバイスにする。基板Ｐの寸法は、例えば、幅方向（短尺となる方向）の寸法が１０ｃｍ～２ｍ程度であり、長さ方向（長尺となる方向）の寸法が１０ｍ以上である。尚、基板Ｐの寸法は、上記した寸法に限定されない。 The treated substrate P is recovered as a recovery roll FR2 by being wound into a roll. The collection roll FR2 is attached to a dicing device (not shown). The dicing apparatus to which the collection roll FR2 is mounted divides the processed substrate P for each device (dicing) to form a plurality of devices. Regarding the dimensions of the substrate P, for example, the dimension in the width direction (short direction) is about 10 cm to 2 m, and the dimension in the length direction (long direction) is 10 m or more. In addition, the dimension of the board | substrate P is not limited to an above-described dimension.
　図１では、Ｘ方向、Ｙ方向及びＺ方向が直交する直交座標系となっている。Ｘ方向は、水平面内において供給用ロールＦＲ１及び回収用ロールＦＲ２を結ぶ方向であり、図１における左右方向である。Ｙ方向は、水平面内においてＸ方向に直交する方向であり、図１における前後方向である。Ｙ方向は、供給用ロールＦＲ１及び回収用ロールＦＲ２の軸方向となっている。Ｚ方向は、鉛直方向であり、図１における上下方向である。 FIG. 1 shows an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane, and is the left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-rear direction in FIG. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is the vertical direction, and is the vertical direction in FIG.
　デバイス製造システム１は、基板Ｐを供給する基板供給装置２と、基板供給装置２によって供給された基板Ｐに対して各種処理を施す処理装置Ｕ１～Ｕｎと、処理装置Ｕ１～Ｕｎによって処理が施された基板Ｐを回収する基板回収装置４と、デバイス製造システム１の各装置を制御する上位制御装置５とを備える。 The device manufacturing system 1 includes a substrate supply device 2 that supplies a substrate P, processing devices U1 to Un that perform various processes on the substrate P supplied by the substrate supply device 2, and processing is performed by the processing devices U1 to Un. The substrate recovery apparatus 4 that recovers the processed substrate P and the host controller 5 that controls each device of the device manufacturing system 1 are provided.
　基板供給装置２には、供給用ロールＦＲ１が回転可能に装着される。基板供給装置２は、装着された供給用ロールＦＲ１から基板Ｐを送り出す駆動ローラＤＲ１と、基板Ｐの幅方向（Ｙ方向）における位置を調整するエッジポジションコントローラＥＰＣ１とを有する。駆動ローラＤＲ１は、基板Ｐの表裏両面を挟持しながら回転し、基板Ｐを供給用ロールＦＲ１から回収用ロールＦＲ２へ向かう搬送方向に送り出すことで、基板Ｐを処理装置Ｕ１～Ｕｎに供給する。このとき、エッジポジションコントローラＥＰＣ１は、基板Ｐの幅方向の端部（エッジ）における位置が、目標位置に対して±十数μｍ程度の範囲から±数十μｍ程度の範囲に収まるように、基板Ｐを幅方向に移動させて、基板Ｐの幅方向における位置を修正する。 The substrate supply device 2 is rotatably mounted with a supply roll FR1. The substrate supply apparatus 2 includes a driving roller DR1 that sends out the substrate P from the mounted supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR1 rotates while sandwiching both front and back surfaces of the substrate P, and feeds the substrate P to the processing apparatuses U1 to Un by feeding the substrate P in the transport direction from the supply roll FR1 to the collection roll FR2. At this time, the edge position controller EPC1 sets the substrate P so that the position at the end (edge) in the width direction of the substrate P is within the range of about ± 10 μm to about ± 10 μm with respect to the target position. The position of the substrate P in the width direction is corrected by moving P in the width direction.
　基板回収装置４には、回収用ロールＦＲ２が回転可能に装着される。基板回収装置４は、処理後の基板Ｐを回収用ロールＦＲ２側に引き寄せる駆動ローラＤＲ２と、基板Ｐの幅方向（Ｙ方向）における位置を調整するエッジポジションコントローラＥＰＣ２とを有する。基板回収装置４は、駆動ローラＤＲ２により基板Ｐの表裏両面を挟持しながら回転し、基板Ｐを搬送方向に引き寄せると共に、回収用ロールＦＲ２を回転させることで、基板Ｐを巻き上げる。このとき、エッジポジションコントローラＥＰＣ２は、エッジポジションコントローラＥＰＣ１と同様に構成され、基板Ｐの幅方向の端部（エッジ）が幅方向においてばらつかないように、基板Ｐの幅方向における位置を修正する。 The substrate collection device 4 is rotatably mounted with a collection roll FR2. The substrate recovery apparatus 4 includes a driving roller DR2 that draws the processed substrate P toward the recovery roll FR2, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate collection device 4 rotates while sandwiching the front and back surfaces of the substrate P by the driving roller DR2, pulls the substrate P in the transport direction, and rotates the collection roll FR2, thereby winding the substrate P. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the end portion (edge) in the width direction of the substrate P does not vary in the width direction. .
　処理装置Ｕ１は、基板供給装置２から供給された基板Ｐの表面に感光性機能液を塗布する塗布装置である。感光性機能液としては、例えば、フォトレジスト、感光性シランカップリング材（感光性親撥液性改質材、感光性メッキ還元材等）、ＵＶ硬化樹脂液等が用いられる。処理装置Ｕ１は、基板Ｐの搬送方向の上流側から順に、塗布機構Ｇｐ１と乾燥機構Ｇｐ２とが設けられている。塗布機構Ｇｐ１は、基板Ｐが巻き付けられる圧胴ローラＲ１と、圧胴ローラＲ１に対向する塗布ローラＲ２とを有する。塗布機構Ｇｐ１は、供給された基板Ｐを圧胴ローラＲ１に巻き付けた状態で、圧胴ローラＲ１及び塗布ローラＲ２により基板Ｐを挟持する。そして、塗布機構Ｇｐ１は、圧胴ローラＲ１及び塗布ローラＲ２を回転させることで、基板Ｐを搬送方向に移動させながら、塗布ローラＲ２により感光性機能液を塗布する。乾燥機構Ｇｐ２は、熱風またはドライエアー等の乾燥用エアーを吹き付け、感光性機能液に含まれる溶質（溶剤または水）を除去し、感光性機能液が塗布された基板Ｐを乾燥させることで、基板Ｐ上に感光性機能層を形成する。 The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (photosensitive lyophobic modifier, photosensitive plating reducing material, etc.), UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the transport direction of the substrate P. The coating mechanism Gp1 includes a pressure drum roller R1 around which the substrate P is wound, and a coating roller R2 facing the pressure drum roller R1. The coating mechanism Gp1 sandwiches the substrate P between the impression cylinder roller R1 and the application roller R2 in a state where the supplied substrate P is wound around the impression cylinder roller R1. Then, the application mechanism Gp1 applies the photosensitive functional liquid by the application roller R2 while rotating the impression cylinder roller R1 and the application roller R2 to move the substrate P in the transport direction. The drying mechanism Gp2 blows drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on the substrate P.
　処理装置Ｕ２は、基板Ｐの表面に形成された感光性機能層を安定にすべく、処理装置Ｕ１から搬送された基板Ｐを所定温度（例えば、数１０～１２０℃程度）まで加熱する加熱装置である。処理装置Ｕ２は、基板Ｐの搬送方向の上流側から順に、加熱チャンバＨＡ１と冷却チャンバＨＡ２とが設けられている。加熱チャンバＨＡ１は、その内部に複数のローラ及び複数のエア・ターンバーが設けられており、複数のローラ及び複数のエア・ターンバーは、基板Ｐの搬送経路を構成している。複数のローラは、基板Ｐの裏面に転接して設けられ、複数のエア・ターンバーは、基板Ｐの表面側に非接触状態で設けられる。複数のローラ及び複数のエア・ターンバーは、基板Ｐの搬送経路を長くすべく、蛇行状の搬送経路となる配置になっている。加熱チャンバＨＡ１内を通る基板Ｐは、蛇行状の搬送経路に沿って搬送されながら所定温度まで加熱される。冷却チャンバＨＡ２は、加熱チャンバＨＡ１で加熱された基板Ｐの温度が、後工程（処理装置Ｕ３）の環境温度と揃うようにすべく、基板Ｐを環境温度まで冷却する。冷却チャンバＨＡ２は、その内部に複数のローラが設けられ、複数のローラは、加熱チャンバＨＡ１と同様に、基板Ｐの搬送経路を長くすべく、蛇行状の搬送経路となる配置になっている。冷却チャンバＨＡ２内を通る基板Ｐは、蛇行状の搬送経路に沿って搬送されながら冷却される。冷却チャンバＨＡ２の搬送方向における下流側には、駆動ローラＤＲ３が設けられ、駆動ローラＤＲ３は、冷却チャンバＨＡ２を通過した基板Ｐを挟持しながら回転することで、基板Ｐを処理装置Ｕ３へ向けて供給する。 The processing device U2 is a heating device that heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, about several tens to 120 ° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air turn bars constitute a transport path for the substrate P. The plurality of rollers are provided in rolling contact with the back surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. The plurality of rollers and the plurality of air turn bars are arranged to form a meandering transport path so as to lengthen the transport path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being transported along a meandering transport path. The cooling chamber HA2 cools the substrate P to the environmental temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the environmental temperature of the subsequent process (processing apparatus U3). The cooling chamber HA2 is provided with a plurality of rollers, and the plurality of rollers are arranged in a meandering manner in order to lengthen the conveyance path of the substrate P, similarly to the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being transferred along a meandering transfer path. A driving roller DR3 is provided on the downstream side in the transport direction of the cooling chamber HA2, and the driving roller DR3 rotates while sandwiching the substrate P that has passed through the cooling chamber HA2, thereby moving the substrate P toward the processing apparatus U3. Supply.
　処理装置（基板処理装置）Ｕ３は、処理装置Ｕ２から供給された、表面に感光性機能層が形成された基板（感光基板）Ｐに対して、ディスプレイ用の回路または配線等のパターンを投影露光する露光装置である。詳細は後述するが、処理装置Ｕ３は、反射型の円筒マスクＭ（円筒ドラム２１）に照明光束を照明し、照明光束がマスクＭにより反射されることで得られる投影光束を基板Ｐに投影露光する。処理装置Ｕ３は、処理装置Ｕ２から供給された基板Ｐを搬送方向の下流側に送る駆動ローラＤＲ４と、基板Ｐの幅方向（Ｙ方向）における位置を調整するエッジポジションコントローラＥＰＣ３とを有する。駆動ローラＤＲ４は、基板Ｐの表裏両面を挟持しながら回転し、基板Ｐを搬送方向の下流側に送り出すことで、基板Ｐを露光位置で安定に支持する回転ドラム（基板支持ドラム）２５へ向けて供給する。エッジポジションコントローラＥＰＣ３は、エッジポジションコントローラＥＰＣ１と同様に構成され、露光位置における基板Ｐの幅方向が目標位置となるように、基板Ｐの幅方向における位置を修正する。 The processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a circuit for display or wiring on the substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface supplied from the processing apparatus U2. Exposure apparatus. Although details will be described later, the processing unit U3 illuminates the reflective cylindrical mask M (cylindrical drum 21) with an illumination light beam, and projects and exposes a projection light beam obtained by the illumination light beam being reflected by the mask M onto the substrate P. To do. The processing apparatus U3 includes a driving roller DR4 that sends the substrate P supplied from the processing apparatus U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR4 rotates while pinching both the front and back surfaces of the substrate P, and sends the substrate P to the downstream side in the transport direction, so that the drive roller DR4 is directed to a rotating drum (substrate support drum) 25 that stably supports the substrate P at the exposure position. Supply. The edge position controller EPC3 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position.
　また、処理装置Ｕ３は、露光後の基板Ｐにたるみを与えた状態で、基板Ｐを搬送方向の下流側へ送る２組の駆動ローラＤＲ６、ＤＲ７を有するバッファー部ＤＬを備えている。２組の駆動ローラＤＲ６、ＤＲ７は、基板Ｐの搬送方向に所定の間隔を空けて配置されている。駆動ローラＤＲ６は、搬送される基板Ｐの上流側を挟持して回転し、駆動ローラＤＲ７は、搬送される基板Ｐの下流側を挟持して回転することで、基板Ｐを処理装置Ｕ４へ向けて供給する。このとき、基板Ｐは、たるみが与えられているため、駆動ローラＤＲ７よりも搬送方向の下流側において生ずる搬送速度の変動を吸収でき、搬送速度の変動による基板Ｐへの露光処理の影響を縁切りすることができる。また、処理装置Ｕ３内には、円筒マスクＭ（以降、単にマスクＭとも呼ぶ）のマスクパターンの一部分の像と基板Ｐとを相対的に位置合せ（アライメント）する為に、基板Ｐに予め形成されたアライメントマーク、或いは回転ドラム（基板支持ドラム）２５の外周面の一部に形成された基準パターン等を検出するアライメント顕微鏡ＡＭＧ１、ＡＭＧ２が設けられている。 Further, the processing apparatus U3 includes a buffer unit DL having two sets of drive rollers DR6 and DR7 that send the substrate P to the downstream side in the transport direction in a state in which the substrate P after exposure is slackened. The two sets of drive rollers DR6 and DR7 are arranged at a predetermined interval in the transport direction of the substrate P. The drive roller DR6 rotates while sandwiching the upstream side of the substrate P to be transported, and the drive roller DR7 rotates while sandwiching the downstream side of the substrate P to be transported to direct the substrate P toward the processing apparatus U4. And supply. At this time, since the substrate P is provided with a slack, it is possible to absorb fluctuations in the conveyance speed that occur on the downstream side in the conveyance direction with respect to the driving roller DR7, so that the influence of the exposure processing on the substrate P due to the fluctuations in the conveyance speed is cut off. can do. Further, in the processing apparatus U3, in order to relatively align (align) the image of a part of the mask pattern of the cylindrical mask M (hereinafter also simply referred to as the mask M) and the substrate P, it is formed in advance on the substrate P. Alignment microscopes AMG1 and AMG2 are provided for detecting the alignment mark thus formed or a reference pattern formed on a part of the outer peripheral surface of the rotary drum (substrate support drum) 25.
　処理装置Ｕ４は、処理装置Ｕ３から搬送された露光後の基板Ｐに対して、湿式による現像処理、無電解メッキ処理等を行なう湿式処理装置である。処理装置Ｕ４は、その内部に、鉛直方向（Ｚ方向）に階層化された３つの処理槽ＢＴ１、ＢＴ２、ＢＴ３と、基板Ｐを搬送する複数のローラと、を有する。複数のローラは、３つの処理槽ＢＴ１、ＢＴ２、ＢＴ３の内部を、基板Ｐが順に通過する搬送経路となるように配置される。処理槽ＢＴ３の搬送方向における下流側には、駆動ローラＤＲ８が設けられ、駆動ローラＤＲ８は、処理槽ＢＴ３を通過した基板Ｐを挟持しながら回転することで、基板Ｐを処理装置Ｕ５へ向けて供給する。 The processing apparatus U4 is a wet processing apparatus that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 hierarchized in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P therein. The plurality of rollers are arranged so as to serve as a conveyance path through which the substrate P sequentially passes through the three processing tanks BT1, BT2, and BT3. A driving roller DR8 is provided on the downstream side in the transport direction of the processing tank BT3, and the driving roller DR8 rotates while sandwiching the substrate P that has passed through the processing tank BT3, so that the substrate P is directed toward the processing apparatus U5. Supply.
　図示は省略するが、処理装置Ｕ５は、処理装置Ｕ４から搬送された基板Ｐを乾燥させる乾燥装置である。処理装置Ｕ５は、処理装置Ｕ４において湿式処理された基板Ｐに付着する液滴を除去すると共に、基板Ｐの水分含有量を調整する。処理装置Ｕ５により乾燥された基板Ｐは、さらに幾つかの処理装置を経て、処理装置Ｕｎに搬送される。そして、処理装置Ｕｎで処理された後、基板Ｐは、基板回収装置４の回収用ロールＦＲ２に巻き上げられる。 Although illustration is abbreviate | omitted, the processing apparatus U5 is a drying apparatus which dries the board | substrate P conveyed from the processing apparatus U4. The processing apparatus U5 removes droplets attached to the substrate P wet-processed in the processing apparatus U4 and adjusts the moisture content of the substrate P. The substrate P dried by the processing apparatus U5 is further transferred to the processing apparatus Un through several processing apparatuses. Then, after being processed by the processing device Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery device 4.
　上位制御装置５は、基板供給装置２、基板回収装置４及び複数の処理装置Ｕ１～Ｕｎを統括制御する。上位制御装置５は、基板供給装置２及び基板回収装置４を制御して、基板Ｐを基板供給装置２から基板回収装置４へ向けて搬送させる。また、上位制御装置５は、基板Ｐの搬送に同期させながら、複数の処理装置Ｕ１～Ｕｎを制御して、基板Ｐに対する各種処理を実行させる。 The host control device 5 performs overall control of the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The host control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 toward the substrate recovery device 4. Further, the host control device 5 controls the plurality of processing devices U1 to Un to perform various processes on the substrate P while synchronizing with the transport of the substrate P.
＜露光装置（基板処理装置）＞
　次に、第１実施形態の処理装置Ｕ３としての露光装置（基板処理装置）の構成について、図２から図５を参照して説明する。図２は、第１実施形態の露光装置（基板処理装置）の全体構成を示す図である。図３は、図２に示す露光装置の照明領域及び投影領域の配置を示す図である。図４は、図２に示す露光装置の照明光学系及び投影光学系の構成を示す図である。図５は、マスクに照射される照明光束、及びマスクから射出する投影光束の状態を示す図である。 <Exposure device (substrate processing device)>
Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. FIG. 5 is a diagram showing a state of an illumination light beam irradiated on the mask and a projected light beam emitted from the mask.
　図２に示す露光装置Ｕ３は、いわゆる走査露光装置であり、基板Ｐを搬送方向に搬送しながら、円筒状のマスクＭの外周面に形成されたマスクパターンの像を、基板Ｐの表面に投影露光する。尚、図２では、Ｘ方向、Ｙ方向及びＺ方向が直交する直交座標系となっており、図１と同様の直交座標系となっている。 The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and projects a mask pattern image formed on the outer peripheral surface of the cylindrical mask M onto the surface of the substrate P while transporting the substrate P in the transport direction. Exposure. 2 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other, and is an orthogonal coordinate system similar to that in FIG.
　先ず、露光装置Ｕ３に用いられるマスクＭ（図１中の円筒マスクＭ）について説明する。マスクＭは、例えば金属製の円筒体を用いた反射型のマスクとなっている。マスクＭのパターンは、Ｙ方向に延びる第１軸ＡＸ１を中心とする曲率半径Ｒｍとなる外周面（円周面）を有する円筒基材に形成される。マスクＭの円周面は、所定のマスクパターンが形成されたマスク面（第１面）Ｐ１となっている。マスク面Ｐ１は、所定方向に光束を高い効率で反射する高反射部と所定方向に光束を反射しないまたは低い効率で反射する反射抑制部（低反射部）とを含む。マスクパターンは、高反射部及び反射抑制部により形成されている。ここで、反射抑制部は、所定方向に反射する光が少なくなればよい。このため、反射抑制部は、光を吸収する材料や、光を透過する材料、或いは特定方向以外に光を回折させる材料で構成することができる。露光装置Ｕ３は、上記構成のマスクＭとして、アルミニウムやＳＵＳ等の金属の円筒基材で作成したマスクを用いることができる。このため、露光装置Ｕ３は、安価なマスクを用いて露光を行うことができる。 First, the mask M (cylindrical mask M in FIG. 1) used in the exposure apparatus U3 will be described. The mask M is a reflective mask using, for example, a metal cylinder. The pattern of the mask M is formed on a cylindrical base material having an outer peripheral surface (circumferential surface) having a curvature radius Rm centered on the first axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface (first surface) P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency and a reflection suppression part (low reflection part) that does not reflect the light beam in the predetermined direction or reflects it with low efficiency. The mask pattern is formed by a high reflection portion and a reflection suppression portion. Here, the reflection suppressing unit only needs to reflect less light in a predetermined direction. For this reason, the reflection suppressing unit can be made of a material that absorbs light, a material that transmits light, or a material that diffracts light in a direction other than a specific direction. The exposure apparatus U3 can use a mask made of a cylindrical cylindrical base material made of metal such as aluminum or SUS as the mask M having the above configuration. Therefore, the exposure apparatus U3 can perform exposure using an inexpensive mask.
　尚、マスクＭは、１個の表示デバイスに対応するパネル用パターンの全体または一部が形成されていてもよいし、複数個の表示デバイスに対応するパネル用パターンが形成されていてもよい。また、マスクＭは、パネル用パターンが第１軸ＡＸ１周りの周方向に繰り返し複数個形成された多面取り、或いは小型のパネル用パターンが第１軸ＡＸ１に平行な方向に繰り返し複数形成された多面取りでもよい。さらに、マスクＭは、第１の表示デバイスのパネル用パターンと、第１の表示デバイスとサイズ等が異なる第２の表示デバイスのパネル用パターンとが形成された異サイズパターンの多面取りであってもよい。また、マスクＭは、第１軸ＡＸ１を中心とする曲率半径Ｒｍとなる円周面を有していればよく、円筒体の形状に限定されない。例えば、マスクＭは、円周面を有する円弧状の板材であってもよい。また、マスクＭは、薄板状であってもよく、薄板状のマスクＭを湾曲させて、円周面を有するようにしてもよい。 The mask M may be formed with all or part of the panel pattern corresponding to one display device, or may be formed with a panel pattern corresponding to a plurality of display devices. The mask M has a multi-face pattern in which a plurality of panel patterns are repeatedly formed in the circumferential direction around the first axis AX1, or a plurality of small panel patterns in a direction parallel to the first axis AX1. It may be chamfered. Further, the mask M is a multi-face pattern of different size patterns in which a panel pattern for the first display device and a panel pattern for a second display device having a size different from that of the first display device are formed. Also good. Moreover, the mask M should just have the circumferential surface used as the curvature radius Rm centering on 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be an arc-shaped plate having a circumferential surface. In addition, the mask M may be a thin plate, or the thin plate mask M may be curved to have a circumferential surface.
　次に、図２に示す露光装置Ｕ３について説明する。露光装置Ｕ３は、上記した駆動ローラＤＲ４、ＤＲ６、ＤＲ７、基板支持ドラム２５、エッジポジションコントローラＥＰＣ３及びアライメント顕微鏡ＡＭＧ１、ＡＭＧ２の他に、マスク保持機構１１と、基板支持機構１２と、照明光学系ＩＬと、投影光学系ＰＬと、下位制御装置１６と、を有する。露光装置Ｕ３は、光源装置１３から射出された照明光を、照明光学系ＩＬと投影光学系ＰＬの一部とを介して、マスク保持機構１１のマスク保持ドラム２１（以下、円筒ドラム２１とも呼ぶ）に支持されるマスクＭのパターンが形成されているマスク面Ｐ１に照射し、マスクＭのマスク面Ｐ１で反射した投影光束（結像光）を、投影光学系ＰＬを介して基板支持機構１２の基板支持ドラム２５で支持される基板Ｐに投射する。 Next, the exposure apparatus U3 shown in FIG. 2 will be described. In addition to the driving rollers DR4, DR6, DR7, the substrate support drum 25, the edge position controller EPC3, and the alignment microscopes AMG1, AMG2, the exposure apparatus U3 includes a mask holding mechanism 11, a substrate support mechanism 12, and an illumination optical system IL. A projection optical system PL, and a low-order control device 16. The exposure apparatus U3 illuminates the light emitted from the light source device 13 via the illumination optical system IL and a part of the projection optical system PL. The mask holding drum 21 of the mask holding mechanism 11 (hereinafter also referred to as the cylindrical drum 21). ) Is irradiated onto the mask surface P1 on which the pattern of the mask M supported by the substrate M is formed, and the projection light beam (imaging light) reflected by the mask surface P1 of the mask M is supplied to the substrate support mechanism 12 via the projection optical system PL. Is projected onto the substrate P supported by the substrate support drum 25.
　下位制御装置１６は、露光装置Ｕ３の各部を制御し、各部に処理を実行させる。下位制御装置１６は、デバイス製造システム１の上位制御装置５の一部または全部であってもよい。また、下位制御装置１６は、上位制御装置５に制御され、上位制御装置５とは別の装置であってもよい。下位制御装置１６は、例えば、コンピュータを含む。 The lower-level control device 16 controls each part of the exposure apparatus U3 and causes each part to execute processing. The lower level control device 16 may be a part or all of the higher level control device 5 of the device manufacturing system 1. Further, the lower level control device 16 may be a device controlled by the higher level control device 5 and different from the higher level control device 5. The lower control device 16 includes, for example, a computer.
　マスク保持機構１１は、マスクＭを保持する円筒ドラム２１と、円筒ドラム２１を回転させる第１駆動部２２とを有している。円筒ドラム２１は、マスクＭの第１軸ＡＸ１を回転中心とする曲率半径Ｒｍの円筒となるようにマスクＭを保持する。第１駆動部２２は、下位制御装置１６に接続され、第１軸ＡＸ１を回転中心に円筒ドラム２１を回転させる。 The mask holding mechanism 11 includes a cylindrical drum 21 that holds the mask M, and a first drive unit 22 that rotates the cylindrical drum 21. The cylindrical drum 21 holds the mask M so as to be a cylinder having a radius of curvature Rm with the first axis AX1 of the mask M as the rotation center. The first drive unit 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 around the first axis AX1.
　尚、マスク保持機構１１の円筒ドラム２１は、その外周面に高反射部と低反射部とでマスクパターンを直接形成したが、この構成に限らない。マスク保持機構１１としての円筒ドラム２１は、その外周面に倣って薄板状の反射型マスクＭを巻き付けて保持してもよい。また、マスク保持機構１１としての円筒ドラム２１は、予め半径Ｒｍで円弧状に湾曲させた板状の反射型マスクＭを円筒ドラム２１の外周面に着脱可能に保持してもよい。 The cylindrical drum 21 of the mask holding mechanism 11 directly forms a mask pattern with a high reflection portion and a low reflection portion on the outer peripheral surface thereof, but is not limited to this configuration. The cylindrical drum 21 as the mask holding mechanism 11 may wind and hold a thin plate-like reflective mask M following the outer peripheral surface thereof. Further, the cylindrical drum 21 as the mask holding mechanism 11 may detachably hold a plate-shaped reflective mask M that is previously curved in an arc shape with a radius Rm on the outer peripheral surface of the cylindrical drum 21.
　基板支持機構１２は、基板Ｐを支持する基板支持ドラム２５と、基板支持ドラム２５を回転させる第２駆動部２６と、一対のエア・ターンバーＡＴＢ１、ＡＴＢ２と、一対のガイドローラ２７、２８とを有している。基板支持ドラム２５は、Ｙ方向に延びる第２軸ＡＸ２を中心とする曲率半径Ｒｐとなる外周面（円周面）を有する円筒形状に形成されている。ここで、第１軸ＡＸ１と第２軸ＡＸ２とは互いに平行になっており、第１軸ＡＸ１及び第２軸ＡＸ２を通る（含む）面を中心面ＣＬとしている。基板支持ドラム２５の円周面の一部は、基板Ｐを支持する支持面Ｐ２となっている。つまり、基板支持ドラム２５は、その支持面Ｐ２に基板Ｐが巻き付けられることで、基板Ｐを円筒面状に湾曲させて安定に支持する。第２駆動部２６は、下位制御装置１６に接続され、第２軸ＡＸ２を回転中心に基板支持ドラム２５を回転させる。一対のエア・ターンバーＡＴＢ１，ＡＴＢ２と一対のガイドローラ２７、２８が、基板支持ドラム２５を挟んで、基板Ｐの搬送方向の上流側及び下流側にそれぞれ設けられている。ガイドローラ２７は駆動ローラＤＲ４から搬送された基板Ｐをエア・ターンバーＡＴＢ１を介して基板支持ドラム２５に案内し、ガイドローラ２８は基板支持ドラム２５を経てエア・ターンバーＡＴＢ２から搬送された基板Ｐを駆動ローラＤＲ６に案内する。 The substrate support mechanism 12 includes a substrate support drum 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support drum 25, a pair of air turn bars ATB1 and ATB2, and a pair of guide rollers 27 and 28. Have. The substrate support drum 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) having a curvature radius Rp with the second axis AX2 extending in the Y direction as the center. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing (including) the first axis AX1 and the second axis AX2 is a center plane CL. A part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. That is, the substrate support drum 25 supports the substrate P stably by curving the substrate P into a cylindrical surface by winding the substrate P around the support surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support drum 25 about the second axis AX2. A pair of air turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side, respectively, in the transport direction of the substrate P with the substrate support drum 25 interposed therebetween. The guide roller 27 guides the substrate P conveyed from the driving roller DR4 to the substrate support drum 25 via the air turn bar ATB1, and the guide roller 28 guides the substrate P conveyed from the air turn bar ATB2 via the substrate support drum 25. Guide to the drive roller DR6.
　基板支持機構１２は、第２駆動部２６により基板支持ドラム２５を回転させることで、基板支持ドラム２５に導入した基板Ｐを、基板支持ドラム２５の支持面Ｐ２で支持しながら、所定速度で長尺方向（Ｘ方向）に送る。 The substrate support mechanism 12 rotates the substrate support drum 25 by the second driving unit 26, thereby supporting the substrate P introduced into the substrate support drum 25 on the support surface P <b> 2 of the substrate support drum 25 and at a predetermined speed. Send in the scale direction (X direction).
　このとき、第１駆動部２２及び第２駆動部２６に接続された下位制御装置１６は、円筒ドラム２１と基板支持ドラム２５とを所定の回転速度比で同期回転させることによって、マスクＭのマスク面Ｐ１に形成されたマスクパターンの投影像が、基板支持ドラム２５の支持面Ｐ２に巻き付けられた基板Ｐの表面（円周面に倣って湾曲した面）に連続的に繰り返し走査露光される。露光装置Ｕ３、第１駆動部２２及び第２駆動部２６が本実施形態の移動機構となる。また、図２に示した露光装置Ｕ３においては、ガイドローラ２７よりも基板Ｐの搬送方向上流側の部分が基板支持ドラム２５の支持面Ｐ２に基板Ｐを供給する基板供給部となる。基板供給部には、図１で示した供給用ロールＦＲ１を直接設けても良い。同様に、ガイドローラ２８よりも基板Ｐの搬送方向下流側の部分が基板支持ドラム２５の支持面Ｐ２から基板Ｐを回収する基板回収部となる。基板回収部に、図１で示した回収用ロールＦＲ２を直接設けても良い。 At this time, the lower-level control device 16 connected to the first drive unit 22 and the second drive unit 26 rotates the cylindrical drum 21 and the substrate support drum 25 synchronously at a predetermined rotation speed ratio, thereby masking the mask M. The projected image of the mask pattern formed on the surface P1 is continuously and repeatedly scanned and exposed on the surface of the substrate P (surface curved along the circumferential surface) wound around the support surface P2 of the substrate support drum 25. The exposure apparatus U3, the first drive unit 22, and the second drive unit 26 serve as the moving mechanism of this embodiment. In the exposure apparatus U <b> 3 shown in FIG. 2, a portion upstream of the guide roller 27 in the transport direction of the substrate P serves as a substrate supply unit that supplies the substrate P to the support surface P <b> 2 of the substrate support drum 25. The substrate supply unit may be directly provided with the supply roll FR1 shown in FIG. Similarly, a portion downstream of the guide roller 28 in the transport direction of the substrate P is a substrate recovery unit that recovers the substrate P from the support surface P <b> 2 of the substrate support drum 25. The substrate collection unit may be directly provided with the collection roll FR2 shown in FIG.
　光源装置１３は、マスクＭに照明される照明光束ＥＬ１を出射する。光源装置１３は、光源３１と導光部材３２とを有する。光源３１は、所定の波長の光を射出する光源である。光源３１は、例えば水銀ランプ等のランプ光源、エキシマレーザ等の気体レーザ光源、レーザーダイオード、発光ダイオード（ＬＥＤ）等の固体レーザ光源である。光源３１が射出する照明光は、例えば水銀ランプを用いる場合は紫外域の輝線（ｇ線、ｈ線、ｉ線）が利用でき、エキシマレーザ光源を用いる場合はＫｒＦエキシマレーザ光（波長２４８ｎｍ）やＡｒＦエキシマレーザ光（波長１９３ｎｍ）等の遠紫外光（ＤＵＶ光）が利用できる。ここで、光源３１は、ｉ線（３６５ｎｍの波長）より短い波長を含む照明光束ＥＬ１を射出することが好ましい。そのような照明光束ＥＬ１として、ＹＡＧレーザの第３高調波として射出されるレーザ光（波長３５５ｎｍ）、ＹＡＧレーザの第４高調波として射出されるレーザ光（波長２６６ｎｍ）を使うこともできる。 The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. The light source device 13 includes a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is, for example, a lamp light source such as a mercury lamp, a gas laser light source such as an excimer laser, a solid-state laser light source such as a laser diode or a light emitting diode (LED). Illumination light emitted from the light source 31 can use, for example, ultraviolet emission lines (g-line, h-line, i-line) when using a mercury lamp, and KrF excimer laser light (wavelength 248 nm) when using an excimer laser light source. Far ultraviolet light (DUV light) such as ArF excimer laser light (wavelength 193 nm) can be used. Here, it is preferable that the light source 31 emits the illumination light beam EL1 including a wavelength shorter than the i-line (365 nm wavelength). As such illumination light beam EL1, laser light (wavelength 355 nm) emitted as the third harmonic of the YAG laser and laser light (wavelength 266 nm) emitted as the fourth harmonic of the YAG laser can also be used.
　導光部材３２は、光源３１から出射された照明光束ＥＬ１を照明光学系ＩＬに導く。導光部材３２は、光ファイバ、またはミラーを用いたリレーモジュール等で構成される。また、導光部材３２は、照明光学系ＩＬが複数設けられている場合、光源３１からの照明光束ＥＬ１を複数に分割し、複数の照明光束ＥＬ１を複数の照明光学系ＩＬに導く。本実施形態の導光部材３２は、光源３１から射出された照明光束ＥＬ１を所定の偏光状態の光として偏光ビームスプリッタＰＢＳに入射させる。偏光ビームスプリッタＰＢＳは、マスクＭを落射照明するためにマスクＭと投影光学系ＰＬとの間に設けられ、Ｓ偏光の直線偏光となる光束を反射し、Ｐ偏光の直線偏光となる光束を透過する。このため、光源装置１３は、偏光ビームスプリッタＰＢＳに入射する照明光束ＥＬ１が直線偏光（Ｓ偏光）の光束となる照明光束ＥＬ１を出射する。光源装置１３は、偏光ビームスプリッタＰＢＳに波長及び位相が揃った偏光レーザを出射する。例えば、光源装置１３は、光源３１から射出される光束が偏光された光である場合、導光部材３２として、偏波面保存ファイバを用い、光源装置１３から出力されたレーザ光の偏光状態を維持したまま導光する。また、例えば、光源３１から出力された光束を光ファイバで案内し、光ファイバから出力された光を偏光板で偏光させてもよい。つまり光源装置１３は、ランダム偏光の光束が案内されている場合、ランダム偏光の光束を偏光板で偏光してもよい。また光源装置１３は、レンズ等を用いたリレー光学系により、光源３１から出力された光束を案内してもよい。 The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 includes an optical fiber or a relay module using a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 divides the illumination light beam EL1 from the light source 31 into a plurality, and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. The light guide member 32 of the present embodiment causes the illumination light beam EL1 emitted from the light source 31 to enter the polarization beam splitter PBS as light of a predetermined polarization state. The polarizing beam splitter PBS is provided between the mask M and the projection optical system PL for incident illumination of the mask M, reflects a light beam that becomes S-polarized linearly polarized light, and transmits a light beam that becomes P-polarized linearly polarized light. To do. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes a linearly polarized light (S-polarized light). The light source device 13 emits a polarized laser having the same wavelength and phase to the polarization beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses a polarization plane preserving fiber as the light guide member 32 and maintains the polarization state of the laser light output from the light source device 13. Guide the light as it is. For example, the light beam output from the light source 31 may be guided by an optical fiber, and the light output from the optical fiber may be polarized by a polarizing plate. That is, the light source device 13 may polarize the randomly polarized light beam by the polarizing plate when the randomly polarized light beam is guided. Further, the light source device 13 may guide the light beam output from the light source 31 by a relay optical system using a lens or the like.
　ここで、図３に示すように、第１実施形態の露光装置Ｕ３は、いわゆるマルチレンズ方式を想定した露光装置である。尚、図３には、円筒ドラム２１に保持されたマスクＭ上の照明領域ＩＲを－Ｚ側から見た平面図（図３の左図）と、基板支持ドラム２５に支持された基板Ｐ上の投影領域ＰＡを＋Ｚ側から見た平面図（図３の右図）とが図示されている。図３の符号Ｘｓは、円筒ドラム２１及び基板支持ドラム２５の移動方向（回転方向）を示す。マルチレンズ方式の露光装置Ｕ３は、マスクＭ上の複数（第１実施形態では例えば６つ）の照明領域ＩＲ１～ＩＲ６に照明光束ＥＬ１をそれぞれ照明し、各照明光束ＥＬ１が各照明領域ＩＲ１～ＩＲ６に反射されることで得られる複数の投影光束ＥＬ２を、基板Ｐ上の複数（第１実施形態では例えば６つ）の投影領域ＰＡ１～ＰＡ６に投影露光する。 Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus assuming a so-called multi-lens system. 3 is a plan view of the illumination area IR on the mask M held by the cylindrical drum 21 as viewed from the −Z side (the left figure of FIG. 3), and on the substrate P supported by the substrate support drum 25. A plan view of the projection area PA from the + Z side (the right view of FIG. 3) is shown. 3 indicates the moving direction (rotating direction) of the cylindrical drum 21 and the substrate support drum 25. The multi-lens type exposure apparatus U3 illuminates a plurality of (for example, six in the first embodiment) illumination areas IR1 to IR6 on the mask M with the illumination light beam EL1, respectively, and each illumination light beam EL1 corresponds to each illumination area IR1 to IR6. A plurality of projection light beams EL2 obtained by being reflected by the projection are projected and exposed to a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment) on the substrate P.
　先ず、照明光学系ＩＬにより照明される複数の照明領域ＩＲ１～ＩＲ６について説明する。図３に示すように、複数の照明領域ＩＲ１～ＩＲ６は、中心面ＣＬを挟んで、回転方向の上流側のマスクＭ上に第１照明領域ＩＲ１、第３照明領域ＩＲ３及び第５照明領域ＩＲ５が配置され、回転方向の下流側のマスクＭ上に第２照明領域ＩＲ２、第４照明領域ＩＲ４及び第６照明領域ＩＲ６が配置される。各照明領域ＩＲ１～ＩＲ６は、マスクＭの軸方向（Ｙ方向）に延びる平行な短辺及び長辺を有する細長い台形状の領域となっている。このとき、台形状の各照明領域ＩＲ１～ＩＲ６は、その短辺が中心面ＣＬ側に位置し、その長辺が外側に位置する領域となっている。第１照明領域ＩＲ１、第３照明領域ＩＲ３及び第５照明領域ＩＲ５は、軸方向に所定の間隔を空けて配置されている。また、第２照明領域ＩＲ２、第４照明領域ＩＲ４及び第６照明領域ＩＲ６は、軸方向に所定の間隔を空けて配置されている。このとき、第２照明領域ＩＲ２は、軸方向において、第１照明領域ＩＲ１と第３照明領域ＩＲ３との間に配置される。同様に、第３照明領域ＩＲ３は、軸方向において、第２照明領域ＩＲ２と第４照明領域ＩＲ４との間に配置される。第４照明領域ＩＲ４は、軸方向において、第３照明領域ＩＲ３と第５照明領域ＩＲ５との間に配置される。第５照明領域ＩＲ５は、軸方向において、第４照明領域ＩＲ４と第６照明領域ＩＲ６との間に配置される。各照明領域ＩＲ１～ＩＲ６は、Ｙ方向に隣り合う台形状の照明領域の斜辺部の三角部同士が、マスクＭの周方向（Ｘ方向）に回したときに互いに重なるように（オーバーラップするように）配置されている。尚、第１実施形態において、各照明領域ＩＲ１～ＩＲ６は、台形状の領域としたが、長方形状の領域でもあってよい。 First, a plurality of illumination areas IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, the plurality of illumination areas IR1 to IR6 includes the first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5 on the mask M on the upstream side in the rotation direction across the center plane CL. And the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotation direction. Each illumination region IR1 to IR6 is an elongated trapezoidal region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination areas IR1 to IR6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. The illumination areas IR1 to IR6 are overlapped so that the triangular portions of the hypotenuses of the trapezoidal illumination areas adjacent in the Y direction overlap each other when rotated in the circumferential direction (X direction) of the mask M. Is arranged). In the first embodiment, the illumination areas IR1 to IR6 are trapezoidal areas, but may be rectangular areas.
　また、マスクＭは、マスクパターンが形成されるパターン形成領域Ａ３と、マスクパターンが形成されないパターン非形成領域Ａ４とを有する。パターン非形成領域Ａ４は、照明光束ＥＬ１を反射し難い低反射領域（反射抑制部）であり、パターン形成領域Ａ３を枠状に囲んで配置されている。第１～第６照明領域ＩＲ１～ＩＲ６は、パターン形成領域Ａ３のＹ方向の全幅をカバーするように、配置されている。 The mask M has a pattern formation area A3 where a mask pattern is formed and a pattern non-formation area A4 where a mask pattern is not formed. The pattern non-formation area A4 is a low reflection area (reflection suppression part) that hardly reflects the illumination light beam EL1, and is arranged so as to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width in the Y direction of the pattern formation region A3.
　照明光学系ＩＬは、複数の照明領域ＩＲ１～ＩＲ６に応じて複数（第１実施形態では例えば６つ）設けられている。複数の照明光学系（分割照明光学系）ＩＬ１～ＩＬ６には、光源装置１３からの照明光束ＥＬ１がそれぞれ入射する。各照明光学系ＩＬ１～ＩＬ６は、光源装置１３から入射された各照明光束ＥＬ１を、各照明領域ＩＲ１～ＩＲ６にそれぞれ導く。つまり、第１照明光学系ＩＬ１は、照明光束ＥＬ１を第１照明領域ＩＲ１に導き、同様に、第２～第６照明光学系ＩＬ２～ＩＬ６は、照明光束ＥＬ１を第２～第６照明領域ＩＲ２～ＩＲ６に導く。複数の照明光学系ＩＬ１～ＩＬ６は、中心面ＣＬを挟んで、第１、第３、第５照明領域ＩＲ１、ＩＲ３、ＩＲ５が配置される側（図２の左側）に、第１照明光学系ＩＬ１、第３照明光学系ＩＬ３及び第５照明光学系ＩＬ５が配置される。第１照明光学系ＩＬ１、第３照明光学系ＩＬ３及び第５照明光学系ＩＬ５は、Ｙ方向に所定の間隔を空けて配置される。また、複数の照明光学系ＩＬ１～ＩＬ６は、中心面ＣＬを挟んで、第２、第４、第６照明領域ＩＲ２、ＩＲ４、ＩＲ６が配置される側（図２の右側）に、第２照明光学系ＩＬ２、第４照明光学系ＩＬ４及び第６照明光学系ＩＬ６が配置される。第２照明光学系ＩＬ２、第４照明光学系ＩＬ４及び第６照明光学系ＩＬ６は、Ｙ方向に所定の間隔を空けて配置される。このとき、第２照明光学系ＩＬ２は、軸方向において、第１照明光学系ＩＬ１と第３照明光学系ＩＬ３との間に配置される。同様に、第３照明光学系ＩＬ３、第４照明光学系ＩＬ４、第５照明光学系ＩＬ５は、軸方向において、第２照明光学系ＩＬ２と第４照明光学系ＩＬ４との間、第３照明光学系ＩＬ３と第５照明光学系ＩＬ５との間、第４照明光学系ＩＬ４と第６照明光学系ＩＬ６との間に配置される。また、第１照明光学系ＩＬ１、第３照明光学系ＩＬ３及び第５照明光学系ＩＬ５と、第２照明光学系ＩＬ２、第４照明光学系ＩＬ４及び第６照明光学系ＩＬ６とは、Ｙ方向からみて対称に配置されている。 A plurality of (for example, six in the first embodiment) illumination optical systems IL are provided according to the plurality of illumination regions IR1 to IR6. The illumination light beam EL1 from the light source device 13 is incident on each of the plurality of illumination optical systems (divided illumination optical systems) IL1 to IL6. Each illumination optical system IL1 to IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 transmit the illumination light beam EL1 to the second to sixth illumination regions IR2. Lead to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged (left side in FIG. 2) with the center plane CL interposed therebetween. IL1, third illumination optical system IL3, and fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. In addition, the plurality of illumination optical systems IL1 to IL6 has the second illumination on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are disposed (right side in FIG. 2) with the center plane CL interposed therebetween. An optical system IL2, a fourth illumination optical system IL4, and a sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are arranged between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. They are arranged between the system IL3 and the fifth illumination optical system IL5, and between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, and the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are from the Y direction. They are arranged symmetrically.
　次に、図４を参照して、各照明光学系ＩＬ１～ＩＬ６について説明する。尚、各照明光学系ＩＬ１～ＩＬ６は、同様の構成となっているため、第１照明光学系ＩＬ１（以下、単に照明光学系ＩＬという）を例に説明する。 Next, the illumination optical systems IL1 to IL6 will be described with reference to FIG. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.
　照明光学系ＩＬは、照明領域ＩＲ（第１照明領域ＩＲ１）を均一な照度で照明すべく、光源装置１３の光源３１からの照明光束ＥＬ１をマスクＭ上の照明領域ＩＲにケーラー照明する。また、照明光学系ＩＬは、偏光ビームスプリッタＰＢＳを用いた落射照明系となっている。照明光学系ＩＬは、光源装置１３からの照明光束ＥＬ１の入射側から順に、照明光学モジュールＩＬＭと、偏光ビームスプリッタＰＢＳと、１／４波長板４１とを有する。 The illumination optical system IL Koehler-illuminates the illumination region IR on the mask M with the illumination light beam EL1 from the light source 31 of the light source device 13 so as to illuminate the illumination region IR (first illumination region IR1) with uniform illuminance. The illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter wavelength plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.
　図４に示すように、照明光学モジュールＩＬＭは、照明光束ＥＬ１の入射側から順に、コリメータレンズ５１と、フライアイレンズ５２と、複数のコンデンサーレンズ５３と、シリンドリカルレンズ５４と、照明視野絞り５５と、リレーレンズ系５６とを含んでおり、第１光軸ＢＸ１上に設けられている。コリメータレンズ５１は、導光部材３２から射出する光を入射して、フライアイレンズ５２の入射側の面全体を照射する。フライアイレンズ５２の出射側の面の中心は、第１光軸ＢＸ１上に配置される。フライアイレンズ５２は、コリメータレンズ５１からの照明光束ＥＬ１を、多数の点光源像に分割した面光源像を生成する。照明光束ＥＬ１はその面光源像から生成される。このとき、点光源像が生成されるフライアイレンズ５２の出射側の面は、フライアイレンズ５２から照明視野絞り５５を介して後述する投影光学系ＰＬの第１凹面鏡７２に至る各種レンズによって、第１凹面鏡７２の反射面が位置する瞳面と光学的に共役となるように配置される。フライアイレンズ５２の出射側に設けられるコンデンサーレンズ５３の光軸は、第１光軸ＢＸ１上に配置される。コンデンサーレンズ５３は、フライアイレンズ５２の出射側に形成された多数の点光源像の各々からの光を、照明視野絞り５５上で重畳させて、均一な照度分布で照明視野絞り５５を照射する。照明視野絞り５５は、図３に示した照明領域ＩＲと相似となる台形又は長方形の矩形状の開口部を有し、その開口部の中心は第１光軸ＢＸ１上に配置される。照明視野絞り５５からマスクＭに至る光路中に設けられるリレーレンズ系（結像系）５６、偏光ビームスプリッタＰＢＳ、１／４波長板４１によって、照明視野絞り５５の開口部はマスクＭ上の照明領域ＩＲと光学的に共役な関係に配置される。リレーレンズ系５６は、第１光軸ＢＸ１に沿って配置された複数のレンズ５６ａ、５６ｂ、５６ｃ、５６ｄで構成され、照明視野絞り５５の開口部を透過した照明光束ＥＬ１を偏光ビームスプリッタＰＢＳを介してマスクＭ上の照明領域ＩＲに照射する。コンデンサーレンズ５３の出射側であって、照明視野絞り５５に隣接した位置には、シリンドリカルレンズ５４が設けられている。シリンドリカルレンズ５４は、入射側が平面となり出射側が凸円筒レンズ面となる平凸シリンドリカルレンズである。シリンドリカルレンズ５４の光軸は、第１光軸ＢＸ１上に配置される。シリンドリカルレンズ５４は、マスクＭ上の照明領域ＩＲを照射する照明光束ＥＬ１の各主光線を、ＸＺ面内では収れんさせ、Ｙ方向に関しては平行状態にする。 As shown in FIG. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field stop 55 in order from the incident side of the illumination light beam EL1. The relay lens system 56 is provided on the first optical axis BX1. The collimator lens 51 receives light emitted from the light guide member 32 and irradiates the entire surface on the incident side of the fly-eye lens 52. The center of the exit side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 generates a surface light source image obtained by dividing the illumination light beam EL1 from the collimator lens 51 into a number of point light source images. The illumination light beam EL1 is generated from the surface light source image. At this time, the exit-side surface of the fly-eye lens 52 on which the point light source image is generated is formed by various lenses from the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 of the projection optical system PL described later. The reflecting surface of the first concave mirror 72 is arranged so as to be optically conjugate with the pupil plane on which it is located. The optical axis of the condenser lens 53 provided on the emission side of the fly-eye lens 52 is disposed on the first optical axis BX1. The condenser lens 53 superimposes light from each of a large number of point light source images formed on the emission side of the fly-eye lens 52 on the illumination field stop 55, and irradiates the illumination field stop 55 with a uniform illuminance distribution. . The illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination region IR shown in FIG. 3, and the center of the opening is arranged on the first optical axis BX1. The relay lens system (imaging system) 56, polarization beam splitter PBS, and quarter wavelength plate 41 provided in the optical path from the illumination field stop 55 to the mask M allow the opening of the illumination field stop 55 to be illuminated on the mask M. Arranged in an optically conjugate relationship with the region IR. The relay lens system 56 includes a plurality of lenses 56a, 56b, 56c, and 56d arranged along the first optical axis BX1, and converts the illumination light beam EL1 transmitted through the opening of the illumination field stop 55 into the polarization beam splitter PBS. The illumination area IR on the mask M is irradiated through A cylindrical lens 54 is provided on the exit side of the condenser lens 53 and adjacent to the illumination field stop 55. The cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is a flat surface and the output side is a convex cylindrical lens surface. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 converges each principal ray of the illumination light beam EL1 that irradiates the illumination region IR on the mask M in the XZ plane and makes it parallel in the Y direction.
　偏光ビームスプリッタＰＢＳは、照明光学モジュールＩＬＭと中心面ＣＬとの間に配置されている。偏光ビームスプリッタＰＢＳは、波面分割面でＳ偏光の直線偏光となる光束を反射し、Ｐ偏光の直線偏光となる光束を透過する。ここで、偏光ビームスプリッタＰＢＳに入射する照明光束ＥＬ１をＳ偏光の直線偏光とすると、照明光束ＥＬ１は偏光ビームスプリッタＰＢＳの波面分割面で反射し、１／４波長板４１を透過して円偏光となってマスクＭ上の照明領域ＩＲを照射する。マスクＭ上の照明領域ＩＲで反射した投影光束ＥＬ２は、再び１／４波長板４１を通ることによって円偏光から直線Ｐ偏光に変換され、偏光ビームスプリッタＰＢＳの波面分割面を透過して投影光学系ＰＬに向かう。偏光ビームスプリッタＰＢＳは、波面分割面に入射された照明光束ＥＬ１の大部分を反射すると共に、投影光束ＥＬ２の大部分を透過することが好ましい。偏光ビームスプリッタＰＢＳの波面分割面での偏光分離特性は消光比で表されるが、その消光比は波面分割面に向かう光線の入射角によっても変わる為、波面分割面の特性は、実用上の結像性能への影響が問題にならないように、照明光束ＥＬ１や投影光束ＥＬ２のＮＡ（開口数）も考慮して設計される。 The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects a light beam that becomes S-polarized linearly polarized light at the wavefront dividing plane and transmits a light beam that becomes P-polarized linearly polarized light. Here, if the illumination light beam EL1 incident on the polarization beam splitter PBS is linearly polarized light of S polarization, the illumination light beam EL1 is reflected by the wavefront dividing surface of the polarization beam splitter PBS, passes through the quarter wavelength plate 41, and is circularly polarized light. The illumination area IR on the mask M is irradiated. The projection light beam EL2 reflected by the illumination area IR on the mask M is again converted from circularly polarized light to linear P polarized light by passing through the quarter-wave plate 41, and is transmitted through the wavefront splitting surface of the polarizing beam splitter PBS to project optically. Head to the system PL. The polarization beam splitter PBS preferably reflects most of the illumination light beam EL1 incident on the wavefront splitting surface and transmits most of the projection light beam EL2. The polarization splitting characteristic at the wavefront splitting plane of the polarization beam splitter PBS is expressed by the extinction ratio, but the extinction ratio also changes depending on the incident angle of the light beam toward the wavefront splitting plane. The design is made in consideration of the NA (numerical aperture) of the illumination light beam EL1 and the projection light beam EL2 so that the influence on the imaging performance is not a problem.
　図５は、マスクＭ上の照明領域ＩＲに照射される照明光束ＥＬ１と、照明領域ＩＲで反射された投影光束ＥＬ２との振る舞いを、ＸＺ面（第１軸ＡＸ１と垂直な面）内で誇張して示した図である。図５に示すように、上記した照明光学系ＩＬは、マスクＭの照明領域ＩＲで反射される投影光束ＥＬ２の主光線がテレセントリック（平行系）となるように、マスクＭの照明領域ＩＲに照射される照明光束ＥＬ１の各主光線を、ＸＺ面（第１軸ＡＸ１と垂直な面）内では意図的に非テレセントリックな状態にし、ＹＺ面（中心面ＣＬと平行）内ではテレセントリックな状態にする。照明光束ＥＬ１のそのような特性は、図４中に示したシリンドリカルレンズ５４によって与えられる。 FIG. 5 exaggerates the behavior of the illumination light beam EL1 applied to the illumination region IR on the mask M and the projection light beam EL2 reflected by the illumination region IR in the XZ plane (plane perpendicular to the first axis AX1). FIG. As shown in FIG. 5, the illumination optical system IL described above irradiates the illumination area IR of the mask M so that the principal ray of the projection light beam EL2 reflected by the illumination area IR of the mask M becomes telecentric (parallel system). Each principal ray of the illumination light beam EL1 to be generated is intentionally non-telecentric in the XZ plane (plane perpendicular to the first axis AX1) and telecentric in the YZ plane (parallel to the center plane CL). . Such a characteristic of the illumination light beam EL1 is given by the cylindrical lens 54 shown in FIG.
　具体的には、マスク面Ｐ１上の照明領域ＩＲの周方向の中央の点Ｑ１を通って第１軸ＡＸ１に向かう線と、マスク面Ｐ１の半径Ｒｍの１／２の円との交点Ｑ２（１／２半径位置）を設定したとき、照明領域ＩＲを通る照明光束ＥＬ１の各主光線が、ＸＺ面では交点Ｑ２に向かうように、シリンドリカルレンズ５４の凸円筒レンズ面の曲率を設定する。このようにすると、照明領域ＩＲ内で反射した投影光束ＥＬ２の各主光線は、ＸＺ面内では、第１軸ＡＸ１、点Ｑ１、交点Ｑ２を通る直線と平行（テレセントリック）な状態となる。 Specifically, an intersection point Q2 (a line extending from the center point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 and a circle having a half radius Rm of the mask surface P1 ( When the ½ radius position is set, the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that each principal ray of the illumination light beam EL1 passing through the illumination region IR is directed to the intersection point Q2 on the XZ plane. In this way, each principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state (telecentric) parallel to a straight line passing through the first axis AX1, the point Q1, and the intersection point Q2 in the XZ plane.
　次に、投影光学系ＰＬにより投影露光される複数の投影領域ＰＡ１～ＰＡ６について説明する。図３に示すように、基板Ｐ上の複数の投影領域ＰＡ１～ＰＡ６は、マスクＭ上の複数の照明領域ＩＲ１～ＩＲ６と対応させて配置されている。つまり、基板Ｐ上の複数の投影領域ＰＡ１～ＰＡ６は、中心面ＣＬを挟んで、搬送方向の上流側の基板Ｐ上に第１投影領域ＰＡ１、第３投影領域ＰＡ３及び第５投影領域ＰＡ５が配置され、搬送方向の下流側の基板Ｐ上に第２投影領域ＰＡ２、第４投影領域ＰＡ４及び第６投影領域ＰＡ６が配置される。各投影領域ＰＡ１～ＰＡ６は、基板Ｐの幅方向（Ｙ方向）に延びる短辺及び長辺を有する細長い台形状（矩形状）の領域となっている。このとき、台形状の各投影領域ＰＡ１～ＰＡ６は、その短辺が中心面ＣＬ側に位置し、その長辺が外側に位置する領域となっている。第１投影領域ＰＡ１、第３投影領域ＰＡ３及び第５投影領域ＰＡ５は、幅方向に所定の間隔を空けて配置されている。また、第２投影領域ＰＡ２、第４投影領域ＰＡ４及び第６投影領域ＰＡ６は、幅方向に所定の間隔を空けて配置されている。このとき、第２投影領域ＰＡ２は、軸方向において、第１投影領域ＰＡ１と第３投影領域ＰＡ３との間に配置される。同様に、第３投影領域ＰＡ３は、軸方向において、第２投影領域ＰＡ２と第４投影領域ＰＡ４との間に配置される。第４投影領域ＰＡ４は、軸方向において、第３投影領域ＰＡ３と第５投影領域ＰＡ５との間に配置される。第５投影領域ＰＡ５は、軸方向において、第４投影領域ＰＡ４と第６投影領域ＰＡ６との間に配置される。各投影領域ＰＡ１～ＰＡ６は、各照明領域ＩＲ１～ＩＲ６と同様に、Ｙ方向に隣り合う台形状の投影領域ＰＡの斜辺部の三角部同士が、基板Ｐの搬送方向に関して重なるように（オーバーラップするように）配置されている。このとき、投影領域ＰＡは、隣り合う投影領域ＰＡの重複する領域での露光量が、重複しない領域での露光量と実質的に同じになるような形状になっている。そして、第１～第６投影領域ＰＡ１～ＰＡ６は、基板Ｐ上に露光される露光領域Ａ７のＹ方向の全幅をカバーするように、配置されている。 Next, a plurality of projection areas PA1 to PA6 that are projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in correspondence with the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P have the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 on the substrate P on the upstream side in the transport direction across the center plane CL. The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 is an elongated trapezoidal (rectangular) area having a short side and a long side extending in the width direction (Y direction) of the substrate P. At this time, each of the trapezoidal projection areas PA1 to PA6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. In each of the projection areas PA1 to PA6, as in the illumination areas IR1 to IR6, the triangular portions of the oblique sides of the trapezoidal projection area PA adjacent in the Y direction overlap with each other in the transport direction of the substrate P (overlapping). To be arranged). At this time, the projection area PA has such a shape that the exposure amount in the area where the adjacent projection areas PA overlap is substantially the same as the exposure amount in the non-overlapping area. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width in the Y direction of the exposure area A7 exposed on the substrate P.
　ここで、図２において、ＸＺ面内で見たとき、マスクＭ上の照明領域ＩＲ１(及びＩＲ３、ＩＲ５)の中心点から照明領域ＩＲ２（及びＩＲ４、ＩＲ６）の中心点までの周長は、支持面Ｐ２に倣った基板Ｐ上の投影領域ＰＡ１（及びＰＡ３、ＰＡ５）の中心点から投影領域ＰＡ２（及びＰＡ４、ＰＡ６）の中心点までの周長と、実質的に等しく設定されている。 Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is The circumferential length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the projection area PA2 (and PA4, PA6) is set to be substantially equal.
　投影光学系ＰＬは、複数の投影領域ＰＡ１～ＰＡ６に応じて複数（第１実施形態では例えば６つ）設けられている。複数の投影光学系（分割投影光学系）ＰＬ１～ＰＬ６には、複数の照明領域ＩＲ１～ＩＲ６から反射された複数の投影光束ＥＬ２がそれぞれ入射する。各投影光学系ＰＬ１～ＰＬ６は、マスクＭで反射された各投影光束ＥＬ２を、各投影領域ＰＡ１～ＰＡ６にそれぞれ導く。つまり、第１投影光学系ＰＬ１は、第１照明領域ＩＲ１からの投影光束ＥＬ２を第１投影領域ＰＡ１に導き、同様に、第２～第６投影光学系ＰＬ２～ＰＬ６は、第２～第６照明領域ＩＲ２～ＩＲ６からの各投影光束ＥＬ２を第２～第６投影領域ＰＡ２～ＰＡ６に導く。複数の投影光学系ＰＬ１～ＰＬ６は、中心面ＣＬを挟んで、第１、第３、第５投影領域ＰＡ１、ＰＡ３、ＰＡ５が配置される側（図２の左側）に、第１投影光学系ＰＬ１、第３投影光学系ＰＬ３及び第５投影光学系ＰＬ５が配置される。第１投影光学系ＰＬ１、第３投影光学系ＰＬ３及び第５投影光学系ＰＬ５は、Ｙ方向に所定の間隔を空けて配置される。また、複数の投影光学系ＰＬ１～ＰＬ６は、中心面ＣＬを挟んで、第２、第４、第６投影領域ＰＡ２、ＰＡ４、ＰＡ６が配置される側（図２の右側）に、第２投影光学系ＰＬ２、第４投影光学系ＰＬ４及び第６投影光学系ＰＬ６が配置される。第２投影光学系ＰＬ２、第４投影光学系ＰＬ４及び第６投影光学系ＰＬ６は、Ｙ方向に所定の間隔を空けて配置される。このとき、第２投影光学系ＰＬ２は、軸方向において、第１投影光学系ＰＬ１と第３投影光学系ＰＬ３との間に配置される。同様に、第３投影光学系ＰＬ３、第４投影光学系ＰＬ４、第５投影光学系ＰＬ５は、軸方向において、第２投影光学系ＰＬ２と第４投影光学系ＰＬ４との間、第３投影光学系ＰＬ３と第５投影光学系ＰＬ５との間、第４投影光学系ＰＬ４と第６投影光学系ＰＬ６との間に配置される。また、第１投影光学系ＰＬ１、第３投影光学系ＰＬ３及び第５投影光学系ＰＬ５と、第２投影光学系ＰＬ２、第４投影光学系ＰＬ４及び第６投影光学系ＰＬ６とは、Ｙ方向からみて対称に配置されている。 A plurality of projection optical systems PL (for example, six in the first embodiment) are provided according to the plurality of projection areas PA1 to PA6. A plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems (divided projection optical systems) PL1 to PL6, respectively. Each projection optical system PL1 to PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1 to PA6. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are second to sixth. Each projection light beam EL2 from the illumination regions IR2 to IR6 is guided to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 has a first projection optical system on the side (left side in FIG. 2) on which the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween. PL1, a third projection optical system PL3, and a fifth projection optical system PL5 are arranged. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of projection optical systems PL1 to PL6 has the second projection on the side (the right side in FIG. 2) on which the second, fourth, and sixth projection areas PA2, PA4, and PA6 are arranged with the center plane CL interposed therebetween. An optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. Arranged between the system PL3 and the fifth projection optical system PL5, and between the fourth projection optical system PL4 and the sixth projection optical system PL6. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are from the Y direction. They are arranged symmetrically.
　再び、図４を参照して、各投影光学系ＰＬ１～ＰＬ６について説明する。尚、各投影光学系ＰＬ１～ＰＬ６は、同様の構成となっているため、第１投影光学系ＰＬ１（以下、単に投影光学系ＰＬという）を例に説明する。 Again, the projection optical systems PL1 to PL6 will be described with reference to FIG. Since the projection optical systems PL1 to PL6 have the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.
　投影光学系ＰＬは、マスクＭ上の照明領域ＩＲ（第１照明領域ＩＲ１）におけるマスクパターンの像を、基板Ｐ上の投影領域ＰＡに投影する。投影光学系ＰＬは、マスクＭからの投影光束ＥＬ２の入射側から順に、上記の１／４波長板４１と、上記の偏光ビームスプリッタＰＢＳと、投影光学モジュールＰＬＭとを有する。 The projection optical system PL projects an image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL includes the quarter-wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in order from the incident side of the projection light beam EL2 from the mask M.
　１／４波長板４１及び偏光ビームスプリッタＰＢＳは、照明光学系ＩＬと兼用となっている。換言すれば、照明光学系ＩＬ及び投影光学系ＰＬは、１／４波長板４１及び偏光ビームスプリッタＰＢＳを共有している。 The quarter-wave plate 41 and the polarization beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wavelength plate 41 and the polarization beam splitter PBS.
　照明領域ＩＲで反射された投影光束ＥＬ２は、テレセントリックな状態（各主光線が互いに平行な状態）となって、投影光学系ＰＬに入射する。照明領域ＩＲで反射された円偏光となる投影光束ＥＬ２は、１／４波長板４１により円偏光から直線偏光（Ｐ偏光）に変換された後、偏光ビームスプリッタＰＢＳに入射する。偏光ビームスプリッタＰＢＳに入射した投影光束ＥＬ２は、偏光ビームスプリッタＰＢＳを透過した後、投影光学モジュールＰＬＭに入射する。 The projection light beam EL2 reflected by the illumination region IR enters a projection optical system PL in a telecentric state (in which each principal ray is parallel to each other). The projection light beam EL2 that is circularly polarized light reflected by the illumination region IR is converted from circularly polarized light to linearly polarized light (P-polarized light) by the quarter wavelength plate 41, and then enters the polarization beam splitter PBS. The projection light beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM.
　投影光学モジュールＰＬＭは、照明光学モジュールＩＬＭに対応して設けられている。つまり、第１投影光学系ＰＬ１の投影光学モジュールＰＬＭは、第１照明光学系ＩＬ１の照明光学モジュールＩＬＭによって照明される第１照明領域ＩＲ１のマスクパターンの像を、基板Ｐ上の第１投影領域ＰＡ１に投影する。同様に、第２～第６投影光学系ＰＬ２～ＰＬ６の投影光学モジュールＬＭは、第２～第６照明光学系ＩＬ２～ＩＬ６の照明光学モジュールＩＬＭによって照明される第２～第６照明領域ＩＲ２～ＩＲ６のマスクパターンの像を、基板Ｐ上の第２～第６投影領域ＰＡ２～ＰＡ６に投影する。 The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 converts the mask pattern image of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 into the first projection area on the substrate P. Project to PA1. Similarly, the projection optical modules LM of the second to sixth projection optical systems PL2 to PL6 have second to sixth illumination regions IR2 to IR2 illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the IR6 mask pattern is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.
　図４に示すように、投影光学モジュールＰＬＭは、照明領域ＩＲにおけるマスクパターンの像を中間像面Ｐ７に結像する第１光学系６１と、第１光学系６１により結像した中間像の少なくとも一部を基板Ｐの投影領域ＰＡに再結像する第２光学系６２と、中間像が形成される中間像面Ｐ７に配置された投影視野絞り６３とを備える。また、投影光学モジュールＰＬＭは、フォーカス補正光学部材６４と、像シフト用光学部材６５と、倍率補正用光学部材６６と、ローテーション補正機構６７と、偏光調整機構（偏光調整手段）６８とを備える。 As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern in the illumination region IR on the intermediate image plane P7, and at least an intermediate image formed by the first optical system 61. A second optical system 62 for re-imaging a part of the image on the projection area PA of the substrate P, and a projection field stop 63 disposed on the intermediate image plane P7 on which the intermediate image is formed are provided. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.
　第１光学系６１及び第２光学系６２は、例えばダイソン系を変形したテレセントリックな反射屈折光学系である。第１光学系６１は、その光軸（以下、第２光軸ＢＸ２という）が中心面ＣＬに対して実質的に直交する。第１光学系６１は、第１偏向部材７０と、第１レンズ群７１と、第１凹面鏡７２とを備える。第１偏向部材７０は、第１反射面Ｐ３と第２反射面Ｐ４とを有する三角プリズムである。第１反射面Ｐ３は、偏光ビームスプリッタＰＢＳからの投影光束ＥＬ２を反射させ、反射させた投影光束ＥＬ２を第１レンズ群７１を通って第１凹面鏡７２に入射させる面となっている。第２反射面Ｐ４は、第１凹面鏡７２で反射された投影光束ＥＬ２が第１レンズ群７１を通って入射し、入射した投影光束ＥＬ２を投影視野絞り６３へ向けて反射する面となっている。第１レンズ群７１は、各種レンズを含み、各種レンズの光軸は、第２光軸ＢＸ２上に配置されている。第１凹面鏡７２は、第１光学系６１の瞳面に配置され、フライアイレンズ５２により生成される多数の点光源像と光学的に共役な関係に設定される。 The first optical system 61 and the second optical system 62 are, for example, telecentric catadioptric optical systems obtained by modifying a Dyson system. The first optical system 61 has its optical axis (hereinafter referred to as the second optical axis BX2) substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72. The first deflecting member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 is a surface that reflects the projection light beam EL2 from the polarization beam splitter PBS and causes the reflected projection light beam EL2 to enter the first concave mirror 72 through the first lens group 71. The second reflecting surface P4 is a surface on which the projection light beam EL2 reflected by the first concave mirror 72 enters through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field stop 63. . The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61 and is set in an optically conjugate relationship with a number of point light source images generated by the fly-eye lens 52.
　偏光ビームスプリッタＰＢＳからの投影光束ＥＬ２は、第１偏向部材７０の第１反射面Ｐ３で反射され、第１レンズ群７１の上半分の視野領域を通って第１凹面鏡７２に入射する。第１凹面鏡７２に入射した投影光束ＥＬ２は、第１凹面鏡７２で反射され、第１レンズ群７１の下半分の視野領域を通って第１偏向部材７０の第２反射面Ｐ４に入射する。第２反射面Ｐ４に入射した投影光束ＥＬ２は、第２反射面Ｐ４で反射され、フォーカス補正光学部材６４及び像シフト用光学部材６５を通過し、投影視野絞り６３に入射する。 The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the upper half field region of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, passes through the lower half field of view of the first lens group 71, and enters the second reflective surface P4 of the first deflecting member 70. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, passes through the focus correction optical member 64 and the image shift optical member 65, and enters the projection field stop 63.
　投影視野絞り６３は、投影領域ＰＡの形状を規定する開口を有する。すなわち、投影視野絞り６３の開口の形状が投影領域ＰＡの実質的な形状を規定することになる。従って、照明光学系ＩＬ内の照明視野絞り５５の開口の形状を、投影領域ＰＡの実質的な形状と相似の台形状にする場合は、投影視野絞り６３を省略することができる。 The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the substantial shape of the projection area PA. Therefore, the projection field stop 63 can be omitted when the shape of the opening of the illumination field stop 55 in the illumination optical system IL is a trapezoid similar to the substantial shape of the projection area PA.
　第２光学系６２は、第１光学系６１と同様の構成であり、中間像面Ｐ７を挟んで第１光学系６１と対称に設けられている。第２光学系６２は、その光軸（以下、第３光軸ＢＸ３という）が中心面ＣＬに対して実質的に直交し、第２光軸ＢＸ２と平行になっている。第２光学系６２は、第２偏向部材８０と、第２レンズ群８１と、第２凹面鏡８２とを備える。第２偏向部材８０は、第３反射面Ｐ５と第４反射面Ｐ６とを有する。第３反射面Ｐ５は、投影視野絞り６３からの投影光束ＥＬ２を反射させ、反射させた投影光束ＥＬ２を第２レンズ群８１を通って第２凹面鏡８２に入射させる面となっている。第４反射面Ｐ６は、第２凹面鏡８２で反射された投影光束ＥＬ２が第２レンズ群８１を通って入射し、入射した投影光束ＥＬ２を投影領域ＰＡへ向けて反射する面となっている。第２レンズ群８１は、各種レンズを含み、各種レンズの光軸は、第３光軸ＢＸ３上に配置されている。第２凹面鏡８２は、第２光学系６２の瞳面に配置され、第１凹面鏡７２に結像した多数の点光源像と光学的に共役な関係に設定される。 The second optical system 62 has the same configuration as that of the first optical system 61, and is provided symmetrically with the first optical system 61 with the intermediate image plane P7 interposed therebetween. The second optical system 62 has an optical axis (hereinafter referred to as a third optical axis BX3) that is substantially perpendicular to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82. The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 is a surface that reflects the projection light beam EL2 from the projection field stop 63 and causes the reflected projection light beam EL2 to enter the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 enters through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62 and is set in an optically conjugate relationship with a number of point light source images formed on the first concave mirror 72.
　投影視野絞り６３からの投影光束ＥＬ２は、第２偏向部材８０の第３反射面Ｐ５で反射され、第２レンズ群８１の上半分の視野領域を通って第２凹面鏡８２に入射する。第２凹面鏡８２に入射した投影光束ＥＬ２は、第２凹面鏡８２で反射され、第２レンズ群８１の下半分の視野領域を通って第２偏向部材８０の第４反射面Ｐ６に入射する。第４反射面Ｐ６に入射した投影光束ＥＬ２は、第４反射面Ｐ６で反射され、倍率補正用光学部材６６を通過し、投影領域ＰＡに投射される。これにより、照明領域ＩＲにおけるマスクパターンの像は、投影領域ＰＡに等倍（×１）で投影される。 The projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80, and enters the second concave mirror 82 through the upper half field region of the second lens group 81. The projection light beam EL <b> 2 that has entered the second concave mirror 82 is reflected by the second concave mirror 82, passes through the lower half field of view of the second lens group 81, and enters the fourth reflecting surface P <b> 6 of the second deflecting member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in the illumination area IR is projected to the projection area PA at the same magnification (× 1).
　フォーカス補正光学部材６４は、第１偏向部材７０と投影視野絞り６３との間に配置されている。フォーカス補正光学部材６４は、基板Ｐ上に投影されるマスクパターンの像のフォーカス状態を調整する。フォーカス補正光学部材６４は、例えば、２枚のクサビ状のプリズムを逆向き（図４ではＸ方向について逆向き）にして、全体として透明な平行平板になるように重ね合わせたものである。この１対のプリズムを互いに対向する面間の間隔を変えずに斜面方向にスライドさせることにより、平行平板としての厚みを可変にする。これによって第１光学系６１の実効的な光路長を微調整し、中間像面Ｐ７及び投影領域ＰＡに形成されるマスクパターンの像のピント状態が微調整される。 The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected onto the substrate P. For example, the focus correction optical member 64 is formed by superposing two wedge-shaped prisms in opposite directions (in the opposite direction in the X direction in FIG. 4) so as to form a transparent parallel plate as a whole. By sliding the pair of prisms in the direction of the slope without changing the distance between the faces facing each other, the thickness of the parallel plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA is finely adjusted.
　像シフト用光学部材６５は、第１偏向部材７０と投影視野絞り６３との間に配置されている。像シフト用光学部材６５は、基板Ｐ上に投影されるマスクパターンの像を像面内において移動可能に調整する。像シフト用光学部材６５は、図４のＸＺ面内で傾斜可能な透明な平行平板ガラスと、図４のＹＺ面内で傾斜可能な透明な平行平板ガラスとで構成される。その２枚の平行平板ガラスの各傾斜量を調整することで、中間像面Ｐ７及び投影領域ＰＡに形成されるマスクパターンの像をＸ方向やＹ方向に微少シフトさせることができる。 The image shifting optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. The image shift optical member 65 adjusts the image of the mask pattern projected onto the substrate P so as to be movable in the image plane. The image shifting optical member 65 is composed of a transparent parallel flat glass that can be tilted in the XZ plane of FIG. 4 and a transparent parallel flat glass that can be tilted in the YZ plane of FIG. By adjusting the respective tilt amounts of the two parallel flat glass plates, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.
　倍率補正用光学部材６６は、第２偏向部材８０と基板Ｐとの間に配置されている。倍率補正用光学部材６６は、例えば、凹レンズ、凸レンズ、凹レンズの３枚を所定間隔で同軸に配置し、前後の凹レンズは固定して、間の凸レンズを光軸（主光線）方向に移動させるように構成したものである。これによって、投影領域ＰＡに形成されるマスクパターンの像は、テレセントリックな結像状態を維持しつつ、等方的に微少量だけ拡大または縮小される。尚、倍率補正用光学部材６６を構成する３枚のレンズ群の光軸は、投影光束ＥＬ２の主光線と平行になるようにＸＺ面内では傾けられている。 The magnification correcting optical member 66 is disposed between the second deflection member 80 and the substrate P. In the magnification correcting optical member 66, for example, a concave lens, a convex lens, and a concave lens are arranged coaxially at predetermined intervals, the front and rear concave lenses are fixed, and the convex lens between them is moved in the optical axis (principal ray) direction. It is configured. As a result, the mask pattern image formed in the projection area PA is isotropically enlarged or reduced by a small amount while maintaining a telecentric imaging state. The optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projection light beam EL2.
　ローテーション補正機構６７は、例えば、アクチュエータ（図示略）によって、第１偏向部材７０をＺ軸と平行な軸周りに微少回転させるものである。このローテーション補正機構６７は、第１偏向部材７０の回転によって、中間像面Ｐ７に形成されるマスクパターンの像を、その中間像面Ｐ７内で微少回転させることができる。 The rotation correction mechanism 67 is a mechanism that slightly rotates the first deflection member 70 around an axis parallel to the Z axis by an actuator (not shown), for example. The rotation correction mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 within the intermediate image plane P7 by the rotation of the first deflection member 70.
　偏光調整機構６８は、例えば、アクチュエータ（図示略）によって、１／４波長板４１を、板面に直交する軸周りに回転させて、偏光方向を調整するものである。偏光調整機構６８は、１／４波長板４１を回転させることによって、投影領域ＰＡに投射される投影光束ＥＬ２の照度を調整することができる。 The polarization adjustment mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 around an axis orthogonal to the plate surface by an actuator (not shown), for example. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter wavelength plate 41.
　このように構成された投影光学系ＰＬにおいて、マスクＭからの投影光束ＥＬ２は、照明領域ＩＲからテレセントリックな状態（各主光線が互いに平行な状態）で出射し、１／４波長板４１及び偏光ビームスプリッタＰＢＳを通って第１光学系６１に入射する。第１光学系６１に入射した投影光束ＥＬ２は、第１光学系６１の第１偏向部材７０の第１反射面（平面鏡）Ｐ３で反射され、第１レンズ群７１を通って第１凹面鏡７２で反射される。第１凹面鏡７２で反射された投影光束ＥＬ２は、再び第１レンズ群７１を通って第１偏向部材７０の第２反射面（平面鏡）Ｐ４で反射されて、フォーカス補正光学部材６４及び像シフト用光学部材６５を透過して、投影視野絞り６３に入射する。投影視野絞り６３を通った投影光束ＥＬ２は、第２光学系６２の第２偏向部材８０の第３反射面（平面鏡）Ｐ５で反射され、第２レンズ群８１を通って第２凹面鏡８２で反射される。第２凹面鏡８２で反射された投影光束ＥＬ２は、再び第２レンズ群８１を通って第２偏向部材８０の第４反射面（平面鏡）Ｐ６で反射されて、倍率補正用光学部材６６に入射する。倍率補正用光学部材６６から出射した投影光束ＥＬ２は、基板Ｐ上の投影領域ＰＡに入射し、照明領域ＩＲ内に現れるマスクパターンの像が投影領域ＰＡに等倍（×１）で投影される。 In the projection optical system PL configured as described above, the projection light beam EL2 from the mask M is emitted from the illumination region IR in a telecentric state (each principal ray is parallel to each other), and the ¼ wavelength plate 41 and the polarization are emitted. The light enters the first optical system 61 through the beam splitter PBS. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflecting surface (plane mirror) P3 of the first deflecting member 70 of the first optical system 61, passes through the first lens group 71, and is reflected by the first concave mirror 72. Reflected. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflecting member 70, and the focus correction optical member 64 and the image shifter. The light passes through the optical member 65 and enters the projection field stop 63. The projection light beam EL2 that has passed through the projection field stop 63 is reflected by the third reflecting surface (planar mirror) P5 of the second deflecting member 80 of the second optical system 62, and then reflected by the second concave mirror 82 through the second lens group 81. Is done. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected by the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80, and enters the magnification correcting optical member 66. . The projection light beam EL2 emitted from the magnification correcting optical member 66 is incident on the projection area PA on the substrate P, and an image of the mask pattern appearing in the illumination area IR is projected to the projection area PA at the same magnification (× 1). .
　本実施形態において、第１偏向部材７０の第２反射面（平面鏡）Ｐ４と、第２偏向部材８０の第３反射面（平面鏡）Ｐ５は、中心面ＣＬ（或いは光軸ＢＸ２、ＢＸ３）に対して４５°傾いた面となっているが、第１偏向部材７０の第１反射面（平面鏡）Ｐ３と、第２偏向部材８０の第４反射面（平面鏡）Ｐ６は、中心面ＣＬ（或いは光軸ＢＸ２、ＢＸ３）に対して４５°以外の角度に設定される。第１偏向部材７０の第１反射面Ｐ３の中心面ＣＬ（或いは光軸ＢＸ２）に対する角度α°（絶対値）は、図５において、点Ｑ１、交点Ｑ２、第１軸ＡＸ１を通る直線と中心面ＣＬとのなす角度をθｓ°としたとき、α°＝４５°＋θｓ°／２の関係に定められる。同様に、第２偏向部材８０の第４反射面Ｐ６の中心面ＣＬ（或いは第２光軸ＢＸ２）に対する角度β°（絶対値）は、基板支持ドラム２５の外周面の周方向に関する投影領域ＰＡ内の中心点を通る投影光束ＥＬ２の主光線と中心面ＣＬとのＺＸ面内での角度をεｓ°としたとき、β°＝４５°＋εｓ°／２の関係に定められる。 In the present embodiment, the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are relative to the center plane CL (or the optical axes BX2, BX3). The first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80 are center plane CL (or light). An angle other than 45 ° is set with respect to the axes BX2, BX3). The angle α ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 of the first deflecting member 70 is the straight line and center passing through the point Q1, the intersection point Q2, and the first axis AX1 in FIG. When the angle between the surface CL and the surface CL is θs °, the relationship is defined as α ° = 45 ° + θs ° / 2. Similarly, the angle β ° (absolute value) with respect to the center plane CL (or the second optical axis BX2) of the fourth reflecting surface P6 of the second deflecting member 80 is a projection area PA related to the circumferential direction of the outer peripheral surface of the substrate support drum 25. When the angle in the ZX plane between the principal ray of the projection light beam EL2 passing through the center point and the center plane CL is εs °, the relationship is defined as β ° = 45 ° + εs ° / 2.
＜マスク及びマスク支持ドラム＞
　次に、図６及び図７を用いて、第１実施形態の露光装置Ｕ３におけるマスク保持機構１１の円筒ドラム（マスク保持ドラム）２１とマスクＭの構成について説明する。図６は、円筒ドラム２１及びその外周面に形成されるマスクＭの概略構成を示す斜視図である。図７は、円筒ドラム２１の外周面を平面に展開したときのマスク面Ｐ１の概略構成を示す展開図である。 <Mask and mask support drum>
Next, the configuration of the cylindrical drum (mask holding drum) 21 and the mask M of the mask holding mechanism 11 in the exposure apparatus U3 of the first embodiment will be described with reference to FIGS. FIG. 6 is a perspective view showing a schematic configuration of the cylindrical drum 21 and the mask M formed on the outer peripheral surface thereof. FIG. 7 is a development view showing a schematic configuration of the mask surface P1 when the outer peripheral surface of the cylindrical drum 21 is developed on a plane.
　本実施形態では、マスクＭを反射型の薄いシートマスクとし、円筒ドラム２１の外周面に巻き付ける場合と、円筒ドラム２１を金属製の円筒基材で構成し、円筒基材の外周面に反射型のマスクパターンを直接形成する場合とのどちらであっても適用可能であるが、ここでは簡単のため、後者の場合で説明する。円筒ドラム２１の外周面（直径φ）であるマスク面Ｐ１に形成されるマスクＭは、先の図３に示したように、パターン形成領域Ａ３とパターン非形成領域（遮光帯領域）Ａ４とで構成される。図６、図７中に示すマスクＭは、投影光学系ＰＬ１～ＰＬ６の各投影領域ＰＡ１～ＰＡ６を介して、図３中の基板Ｐ上の露光領域Ａ７に投影されるパターン形成領域Ａ３に対応している。マスクＭ（パターン形成領域Ａ３）は、円筒ドラム２１の外周面の周方向のほぼ全域に形成されるが、その第１軸ＡＸ１と平行な方向（Ｙ方向）の幅（長さ）をＬとすると、円筒ドラム２１の外周面の第１軸ＡＸ１と平行な方向（Ｙ方向）の長さＬａよりも小さい。また、本実施形態の場合、マスクＭは円筒ドラム２１の外周面の３６０°に渡って密に配置されるのではなく、周方向に関して所定寸法の余白部９２を挟んで設けられる。従って、その余白部９２の周方向の両端は、マスクＭ（パターン形成領域Ａ３）の走査露光方向に関する終端と始端とに対応する。 In this embodiment, the mask M is a reflection-type thin sheet mask and is wound around the outer peripheral surface of the cylindrical drum 21, and the cylindrical drum 21 is formed of a metal cylindrical base material, and the reflective type is formed on the outer peripheral surface of the cylindrical base material. The mask pattern can be applied either directly or directly, but for the sake of simplicity, the latter case will be described here. As shown in FIG. 3, the mask M formed on the mask surface P1 that is the outer peripheral surface (diameter φ) of the cylindrical drum 21 is composed of a pattern formation region A3 and a pattern non-formation region (light-shielding band region) A4. Composed. The mask M shown in FIGS. 6 and 7 corresponds to the pattern formation region A3 projected onto the exposure region A7 on the substrate P in FIG. 3 via the projection regions PA1 to PA6 of the projection optical systems PL1 to PL6. is doing. The mask M (pattern formation region A3) is formed almost in the entire circumferential direction of the outer peripheral surface of the cylindrical drum 21, and the width (length) in the direction parallel to the first axis AX1 (Y direction) is L. Then, the length La of the outer peripheral surface of the cylindrical drum 21 is smaller than the length La in the direction parallel to the first axis AX1 (Y direction). In the present embodiment, the mask M is not densely arranged over 360 ° of the outer peripheral surface of the cylindrical drum 21 but is provided with a blank portion 92 having a predetermined dimension in the circumferential direction. Accordingly, both ends in the circumferential direction of the blank portion 92 correspond to the end and start of the mask M (pattern formation region A3) in the scanning exposure direction.
　また、図６において、円筒ドラム２１の両端面部には第１軸ＡＸ１と同軸のシャフトＳＦが設けられる。シャフトＳＦは、露光装置Ｕ３内の所定位置に設けられたベアリングを介して円筒ドラム２１を支持する。ベアリングは、金属のボールやニードル等を使った接触式のもの、或いは静圧気体軸受のような非接触式のものが使われる。さらに、円筒ドラム２１の外周面（マスク面Ｐ１）のうち、第１軸ＡＸ１と平行なＹ方向に関して、マスクＭの領域よりも外側の端部領域の各々に、円筒ドラム２１（マスクＭ）の回転角度位置を高精度に計測する為のエンコーダスケールを周方向の全面に形成しても良い。回転角度位置を計測するエンコーダスケールが刻設されたスケール円板をシャフトＳＦと同軸に固定しても良い。 Further, in FIG. 6, shafts SF coaxial with the first axis AX1 are provided at both end surfaces of the cylindrical drum 21. The shaft SF supports the cylindrical drum 21 via a bearing provided at a predetermined position in the exposure apparatus U3. As the bearing, a contact type using a metal ball or needle or a non-contact type such as a static pressure gas bearing is used. Further, the cylindrical drum 21 (mask M) has an outer peripheral surface (mask surface P1) of the cylindrical drum 21 (mask M) in each end region outside the region of the mask M in the Y direction parallel to the first axis AX1. An encoder scale for measuring the rotational angle position with high accuracy may be formed on the entire surface in the circumferential direction. A scale disk engraved with an encoder scale for measuring the rotational angle position may be fixed coaxially with the shaft SF.
　ここで、図７は、図６の円筒ドラム２１の外周面を、余白部９２中の切断線９４で切断し、展開した状態である。また、以下では、外周面を展開した状態でＹ方向に直交する方向をθ方向とする。図７に示すように、マスク面Ｐ１の全周長は、直径がφであるので、円周率をπとして、πφとなる。また、マスク面Ｐ１の第１軸ＡＸ１と平行な方向の全長Ｌａに対して、マスクＭ（パターン形成領域Ａ３）の第１軸ＡＸ１と平行なＹ方向の長さＬは、Ｌ≦Ｌａで形成され、θ方向には長さＬｂで形成される。マスク面Ｐ１の全周長πφから長さＬｂを差し引いた長さが、余白部９２のθ方向の合計寸法である。余白部９２内のＹ方向の離散的な位置の各々には、マスクＭの位置合わせの為のアライメントマークも形成される。 Here, FIG. 7 shows a state in which the outer peripheral surface of the cylindrical drum 21 of FIG. 6 is cut along the cutting line 94 in the blank portion 92 and developed. In the following, the direction orthogonal to the Y direction in a state where the outer peripheral surface is expanded is defined as the θ direction. As shown in FIG. 7, since the diameter of the entire circumference of the mask surface P1 is φ, the circumference ratio is πφ. Further, the length L in the Y direction parallel to the first axis AX1 of the mask M (pattern formation region A3) is formed by L ≦ La with respect to the total length La in the direction parallel to the first axis AX1 of the mask surface P1. And is formed with a length Lb in the θ direction. The length obtained by subtracting the length Lb from the total circumferential length πφ of the mask surface P1 is the total dimension of the blank portion 92 in the θ direction. An alignment mark for aligning the mask M is also formed at each of the discrete positions in the Y direction in the blank portion 92.
　ここで、図７に示したマスクＭは、液晶表示ディスプレイ、有機ＥＬディスプレイ等で使用される表示パネルの１つに対応したパターンを形成するためのマスクとする。その場合、マスクＭに形成されるパターンとしては、表示パネルの表示画面の各画素を駆動させるＴＦＴ用の電極や配線を形成するパターンや、表示デバイスの表示画面の各画素のパターンや、表示デバイスのカラーフィルターやブラックマトリックスのパターン等がある。マスクＭ（パターン形成領域Ａ３）には、図７に示すように、表示パネルの表示画面に対応するパターンが形成される表示画面領域ＤＰＡと、表示画面領域ＤＰＡの周囲に配置され、表示画面を駆動する為の回路等のパターンが形成される周辺回路領域ＴＡＢが設けられる。 Here, the mask M shown in FIG. 7 is a mask for forming a pattern corresponding to one of display panels used in a liquid crystal display, an organic EL display, or the like. In that case, as a pattern formed on the mask M, a pattern for forming an electrode or wiring for TFT for driving each pixel of the display screen of the display panel, a pattern of each pixel of the display screen of the display device, or a display device Color filters and black matrix patterns. As shown in FIG. 7, the mask M (pattern formation area A3) is arranged around the display screen area DPA on which a pattern corresponding to the display screen of the display panel is formed, and the display screen area DPA. A peripheral circuit region TAB in which a pattern such as a circuit for driving is formed is provided.
　マスクＭ上の表示画面領域ＤＰＡの大きさは、製造する表示パネルの表示部の大きさ（対角長Ｌｅのインチサイズ）に対応するが、図２、図４に示した投影光学系ＰＬの投影倍率が等倍（×１）の場合は、マスクＭ上の表示画面領域ＤＰＡの実寸（対角長Ｌｅ）が実際の表示画面のインチサイズとなる。本実施形態では、表示画面領域ＤＰＡが、長辺Ｌｄと短辺Ｌｃの長方形とするが、長辺Ｌｄと短辺Ｌｃの長さの比（アスペクト比）は、典型的な例では、Ｌｄ：Ｌｃ＝１６：９やＬｄ：Ｌｃ＝２：１となる。アスペクト比１６：９はいわゆるハイビジョンサイズ（ワイドサイズ）で用いる画面の縦横比である。また、アスペクト比２：１はスコープサイズと呼ばれる画面の縦横比であり、テレビ画像では４Ｋ２Ｋのスーパーハイビジョンサイズで使われるアスペクト比である。一例として、アスペクト比が１６：９で画面サイズが５０インチ（Ｌｅ＝１２７ｃｍ）の表示パネルの場合、マスクＭ上の表示画面領域ＤＰＡの長辺Ｌｄは約１１０．７ｃｍ、短辺Ｌｃは約６２．３ｃｍとなる。また、同じ画面サイズ（５０インチ）で、アスペクト比が２：１の場合は、表示画面領域ＤＰＡの長辺Ｌｄは約１１３．６ｃｍ、短辺Ｌｃは約５６．８ｃｍとなる。 The size of the display screen area DPA on the mask M corresponds to the size of the display portion of the display panel to be manufactured (inch size of diagonal length Le), but the projection optical system PL shown in FIGS. When the projection magnification is equal (× 1), the actual size (diagonal length Le) of the display screen area DPA on the mask M is the inch size of the actual display screen. In the present embodiment, the display screen area DPA is a rectangle having a long side Ld and a short side Lc. Lc = 16: 9 and Ld: Lc = 2: 1. The aspect ratio 16: 9 is an aspect ratio of a screen used in a so-called high vision size (wide size). An aspect ratio of 2: 1 is an aspect ratio of a screen called a scope size, and is an aspect ratio used for a 4K2K super high-definition size in a television image. As an example, in the case of a display panel having an aspect ratio of 16: 9 and a screen size of 50 inches (Le = 127 cm), the long side Ld of the display screen area DPA on the mask M is about 110.7 cm and the short side Lc is about 62. .3cm. When the screen size is the same (50 inches) and the aspect ratio is 2: 1, the long side Ld of the display screen area DPA is about 113.6 cm and the short side Lc is about 56.8 cm.
　図７のように、１つの表示パネル用のマスクＭ（表示画面領域ＤＰＡと周辺回路領域ＴＡＢを含む）を円筒ドラム２１の外周面に形成する場合、表示画面領域ＤＰＡの長辺Ｌｄの方向がθ方向（円筒ドラム２１の周方向）になるように配置するのが良い。これは、円筒ドラム２１の直径φを余り小さくすることなく、円筒ドラム２１の第１軸ＡＸ１方向の長さＬａを余り大きくしないためである。そこで、周辺回路領域ＴＡＢの幅寸法を含めたマスクＭの大きさ（Ｌｂ×Ｌ）の一例を挙げてみる。周辺回路領域ＴＡＢの幅寸法は回路構成によって様々であるが、図７中の表示画面領域ＤＰＡのＹ方向の両端側に位置する周辺回路領域ＴＡＢのＹ方向の幅の合計を、表示画面領域ＤＰＡのＹ方向の長さＬｃの１０％、表示画面領域ＤＰＡのθ方向の両端側に位置する周辺回路領域ＴＡＢのθ方向の幅の合計を、表示画面領域ＤＰＡのθ方向の長さＬｄの１０％としてみる。 As shown in FIG. 7, when a mask M for display panel (including the display screen area DPA and the peripheral circuit area TAB) is formed on the outer peripheral surface of the cylindrical drum 21, the direction of the long side Ld of the display screen area DPA is It is preferable to arrange them in the θ direction (circumferential direction of the cylindrical drum 21). This is because the length La of the cylindrical drum 21 in the direction of the first axis AX1 is not increased too much without reducing the diameter φ of the cylindrical drum 21. Therefore, an example of the size (Lb × L) of the mask M including the width dimension of the peripheral circuit region TAB will be given. Although the width dimension of the peripheral circuit area TAB varies depending on the circuit configuration, the total of the widths in the Y direction of the peripheral circuit area TAB located at both ends in the Y direction of the display screen area DPA in FIG. The total of the width in the θ direction of the peripheral circuit area TAB located at both ends in the θ direction of the display screen area DPA is 10% of the length Ld in the Y direction of the display screen area DPA, As a percentage.
　この場合、アスペクト比１６：９の５０インチの表示パネルでは、マスクＭの長辺Ｌｂは１２１．７６ｃｍ、短辺Ｌは６８．４９ｃｍとなる。余白部９２のθ方向の寸法はゼロ以上であるので、円筒ドラム２１の直径φは、φ≧Ｌｂ／πの計算より、３８．７６ｃｍ以上となる。よって、アスペクト比１６：９の５０インチの表示パネルのパターンを基板Ｐに走査露光する為には、直径φが３８．７６ｍｍ以上、マスク面Ｐ１の第１軸ＡＸ１と平行な方向の長さＬａが短辺Ｌ（６８．４９ｃｍ）以上の円筒ドラム２１が必要となる。この場合、直径φとマスクＭの短辺Ｌの比Ｌ／φは約１．７７である。尚、周辺回路領域ＴＡＢのθ方向の幅の合計を、表示画面領域ＤＰＡのθ方向の長さＬｄの２０％と仮定してみると、マスクＭの長辺Ｌｂは１３２．８３ｃｍ、短辺Ｌは６８．４９ｃｍ、円筒ドラム２１の直径φは４２．２８ｃｍ以上となり、直径φとマスクＭの短辺Ｌの比Ｌ／φは約１．６２である。 In this case, in a 50-inch display panel having an aspect ratio of 16: 9, the long side Lb of the mask M is 121.76 cm and the short side L is 68.49 cm. Since the size of the blank portion 92 in the θ direction is zero or more, the diameter φ of the cylindrical drum 21 is 38.76 cm or more from the calculation of φ ≧ Lb / π. Therefore, in order to scan and expose a 50-inch display panel pattern having an aspect ratio of 16: 9 onto the substrate P, the diameter La is 38.76 mm or more, and the length La is parallel to the first axis AX1 of the mask surface P1. The cylindrical drum 21 having a short side L (68.49 cm) or more is required. In this case, the ratio L / φ between the diameter φ and the short side L of the mask M is about 1.77. Assuming that the total width in the θ direction of the peripheral circuit area TAB is 20% of the length Ld in the θ direction of the display screen area DPA, the long side Lb of the mask M is 132.83 cm, and the short side L Is 68.49 cm, the diameter φ of the cylindrical drum 21 is 42.28 cm or more, and the ratio L / φ between the diameter φ and the short side L of the mask M is about 1.62.
　同様の条件で、アスペクト比２：１の５０インチの表示パネルの場合、マスクＭの長辺Ｌｂは１２４．９６ｃｍ、短辺Ｌは６２．４８ｃｍとなる。これより、円筒ドラム２１の直径φは、φ≧Ｌｂ／πの計算より、３９．７８ｃｍ以上となる。よって、アスペクト比２：１の５０インチの表示パネルのパターンを基板Ｐに走査露光する為には、直径φが３９．７８ｃｍ以上、マスク面Ｐ１の第１軸ＡＸ１と平行な方向の長さＬａが短辺Ｌ（６２．４８ｃｍ）以上の円筒ドラム２１が必要となる。この場合、直径φとマスクＭの短辺Ｌの比Ｌ／φは約１．５７である。尚、周辺回路領域ＴＡＢのθ方向の幅の合計を、表示画面領域ＤＰＡのθ方向の長さＬｄの２０％と仮定してみると、マスクＭの長辺Ｌｂは１３６．３１ｃｍ、短辺Ｌは６２．４８ｃｍ、円筒ドラム２１の直径φは４３．３９ｃｍ以上となり、直径φとマスクＭの短辺Ｌの比Ｌ／φは約１．４４である。 Under the same conditions, in the case of a 50-inch display panel with an aspect ratio of 2: 1, the long side Lb of the mask M is 124.96 cm, and the short side L is 62.48 cm. Accordingly, the diameter φ of the cylindrical drum 21 is 39.78 cm or more from the calculation of φ ≧ Lb / π. Therefore, in order to scan and expose a 50-inch display panel pattern with an aspect ratio of 2: 1 onto the substrate P, the diameter La is 39.78 cm or more and the length La is parallel to the first axis AX1 of the mask surface P1. Requires a cylindrical drum 21 having a short side L (62.48 cm) or more. In this case, the ratio L / φ between the diameter φ and the short side L of the mask M is about 1.57. Assuming that the total width in the θ direction of the peripheral circuit area TAB is 20% of the length Ld in the θ direction of the display screen area DPA, the long side Lb of the mask M is 136.31 cm, and the short side L Is 62.48 cm, the diameter φ of the cylindrical drum 21 is 43.39 cm or more, and the ratio L / φ between the diameter φ and the short side L of the mask M is about 1.44.
　図７のように、単一の表示パネル用のパターンが形成されたマスクＭを円筒ドラム（マスク保持ドラム）２１の外周面に配置する場合、走査露光方向と直交するＹ方向のマスクＭの長さＬと、マスク面Ｐ１の直径φとの関係は、１．３≦Ｌ／φ≦３．８の範囲に収まる。ところが、図７に示したマスクＭの配置を図７中で９０°回転させて、マスクＭの長辺ＬｂをＹ方向、短辺Ｌをθ方向した場合は、上記の関係から外れてくる。例えば、先のアスペクト比１６：９の５０インチの表示パネルの場合、周辺回路領域ＴＡＢのθ方向の幅を表示画面領域ＤＰＡの長さＬｄの１０％とすると、マスクＭの長辺Ｌｂは１２１．７６ｃｍ、短辺Ｌは６８．４９ｃｍであるから、マスク面Ｐ１の第１軸ＡＸ１と平行な方向の長さＬの最小値はＬｂ（１２１．７６ｃｍ）となり、円筒ドラム２１の直径φは、φ≧Ｌ／πの計算より、２１．８０ｃｍ以上となる。よって、直径φとマスクＭの第１軸ＡＸ１と平行な方向の長さＬｂとの比Ｌｂ／φは約５．５９となる。同様に、アスペクト比２：１の５０インチの表示パネルの場合は、マスクＭの長辺Ｌｂが１２４．９６ｃｍ、短辺Ｌが６２．４８ｃｍであるから、マスク面Ｐ１の第１軸ＡＸ１と平行な方向の長さＬの最小値はＬｂ（１２４．９６ｃｍ）、円筒ドラム２１の直径φは、φ≧Ｌ／πの計算より、１９．８９ｃｍ以上となる。よって、直径φとマスクＭの第１軸ＡＸ１と平行な方向の長さＬｂとの比Ｌｂ／φは約６．２８となる。 When the mask M on which a single display panel pattern is formed is arranged on the outer peripheral surface of the cylindrical drum (mask holding drum) 21 as shown in FIG. 7, the length of the mask M in the Y direction orthogonal to the scanning exposure direction. The relationship between the length L and the diameter φ of the mask surface P1 falls within the range of 1.3 ≦ L / φ ≦ 3.8. However, when the arrangement of the mask M shown in FIG. 7 is rotated by 90 ° in FIG. 7 so that the long side Lb of the mask M is in the Y direction and the short side L is in the θ direction, it is out of the above relationship. For example, in the case of a 50-inch display panel with an aspect ratio of 16: 9, if the width of the peripheral circuit area TAB in the θ direction is 10% of the length Ld of the display screen area DPA, the long side Lb of the mask M is 121. Since the short side L is 68.49 cm, the minimum value of the length L in the direction parallel to the first axis AX1 of the mask surface P1 is Lb (121.76 cm), and the diameter φ of the cylindrical drum 21 is From the calculation of φ ≧ L / π, it is 21.80 cm or more. Therefore, the ratio Lb / φ between the diameter φ and the length Lb of the mask M in the direction parallel to the first axis AX1 is about 5.59. Similarly, in the case of a 50-inch display panel with an aspect ratio of 2: 1, the long side Lb of the mask M is 124.96 cm and the short side L is 62.48 cm, so that it is parallel to the first axis AX1 of the mask surface P1. The minimum value of the length L in this direction is Lb (124.96 cm), and the diameter φ of the cylindrical drum 21 is 19.89 cm or more from the calculation of φ ≧ L / π. Therefore, the ratio Lb / φ between the diameter φ and the length Lb of the mask M in the direction parallel to the first axis AX1 is about 6.28.
　このように、マスクＭのサイズ（Ｌｂ×Ｌ）が同じでも、その長辺と短辺の方向によって、比Ｌ／φ（又はＬｂ／φ）の値が大きく変化する。比Ｌ／φ（又はＬｂ／φ）が大きいということは、円筒ドラム２１の直径φが小さく、マスク面Ｐ１の湾曲が急峻になることから、パターン転写の忠実度を維持する為に、図３に示した照明領域ＩＲ又は投影領域ＰＡの走査露光方向Ｘｓの幅を狭くすることにつながる。或いは、円筒ドラム２１の第１軸ＡＸ１と平行な方向の長さが倍増することになり、Ｙ方向に配置する複数の投影光学系ＰＬ（照明光学系ＩＬ）の数をさらに増やすことにつながる。一方、比Ｌ／φ（又はＬｂ／φ）が小さくなるということは、１つは円筒ドラム２１上のマスクＭの第１軸ＡＸ１と平行な方向の長さが小さく、例えば図３中の６つの投影領域ＰＡ１～ＰＡ６のうちの半分程度しか使わないような状況であり、もう一つは円筒ドラム２１の直径φが大きすぎて、図６、図７で示した余白部９２のθ方向の寸法が必要以上に大きくなるような状況である。以上のようなことから、円筒ドラム（マスク保持ドラム）２１の外形の寸法条件を、１．３≦Ｌ／φ≦３．８の関係にすることで、表示パネル用のパターンが形成されたマスクＭを使った精密な露光作業が効率的に実施でき、生産性を上げることができる。 Thus, even if the size (Lb × L) of the mask M is the same, the value of the ratio L / φ (or Lb / φ) varies greatly depending on the direction of the long side and the short side. When the ratio L / φ (or Lb / φ) is large, the diameter φ of the cylindrical drum 21 is small, and the curvature of the mask surface P1 becomes steep. Therefore, in order to maintain the fidelity of pattern transfer, FIG. As a result, the width of the scanning exposure direction Xs of the illumination area IR or projection area PA shown in FIG. Alternatively, the length of the cylindrical drum 21 in the direction parallel to the first axis AX1 is doubled, leading to a further increase in the number of projection optical systems PL (illumination optical systems IL) arranged in the Y direction. On the other hand, when the ratio L / φ (or Lb / φ) is small, one is that the length of the mask M on the cylindrical drum 21 in the direction parallel to the first axis AX1 is small, for example, 6 in FIG. The situation is such that only about half of the projection areas PA1 to PA6 are used, and the other is that the diameter φ of the cylindrical drum 21 is too large, and the blank portion 92 shown in FIGS. The situation is such that the dimensions are larger than necessary. In view of the above, the mask on which the pattern for the display panel is formed is obtained by setting the dimensional condition of the outer shape of the cylindrical drum (mask holding drum) 21 to a relationship of 1.3 ≦ L / φ ≦ 3.8. Precise exposure work using M can be performed efficiently, and productivity can be increased.
　図６及び図７に示す例では、円筒ドラム（マスク保持ドラム）２１の外周面（マスク面Ｐ１）に、１面の表示パネル用のパターンを有するマスクＭが担持される例であったが、マスク面Ｐ１に複数面の表示パネル用のパターンを形成する場合もある。その場合の幾つかの例を図８～図１０により説明する。 In the example shown in FIGS. 6 and 7, the mask M having the pattern for one display panel is carried on the outer peripheral surface (mask surface P <b> 1) of the cylindrical drum (mask holding drum) 21. A pattern for a plurality of display panels may be formed on the mask surface P1. Some examples in that case will be described with reference to FIGS.
　図８は、マスク面Ｐ１上に３つの同一サイズのマスクＭ１を円筒ドラム２１の周長方向（θ方向）に配置する場合の概略構成を示す展開図である。図９は、マスク面Ｐ１上に４つの同一サイズのマスクＭ２を円筒ドラム２１の周長方向（θ方向）に配置する場合の概略構成を示す展開図である。図１０は、図９に示したマスクＭ２を９０°回転させて、マスク面Ｐ１上でＹ方向に２つのマスクＭ２を並べ、それを円筒ドラム２１の周長方向（θ方向）に２組配置する場合の概略構成を示す展開図である。図８から図１０に示す例は、円筒ドラム２１の１回転中に、基板Ｐ上に同一サイズの表示パネルが複数個（ここでは３個または４個）露光されることから、多面取りのマスクＭと呼ばれる。また、図８に示すように、投影光学系ＰＬを介して基板Ｐ上に走査露光すべきマスク面Ｐ１上の領域の全体を、図７に合わせてマスクＭとし、マスクＭの中には表示パネルとなるべきマスクＭ１（図９、１０ではＭ２）が、走査露光方向（θ方向）に所定の間隔Ｓｘを伴って配列される。各マスクＭ１（図９、１０ではＭ２）には、図７と同様に、対角長Ｌｅの表示画面領域ＤＰＡと、それを取り囲む周辺回路領域ＴＡＢとが含まれている。 FIG. 8 is a development view showing a schematic configuration when three masks M1 of the same size are arranged in the circumferential direction (θ direction) of the cylindrical drum 21 on the mask surface P1. FIG. 9 is a developed view showing a schematic configuration when four masks M2 of the same size are arranged in the circumferential direction (θ direction) of the cylindrical drum 21 on the mask surface P1. 10 rotates the mask M2 shown in FIG. 9 by 90 °, arranges two masks M2 in the Y direction on the mask surface P1, and arranges two sets in the circumferential direction (θ direction) of the cylindrical drum 21. It is an expanded view which shows schematic structure in the case of doing. In the example shown in FIGS. 8 to 10, multiple display panels of the same size are exposed on the substrate P during one rotation of the cylindrical drum 21 (three or four in this case). Called M. Further, as shown in FIG. 8, the entire region on the mask surface P1 to be scanned and exposed on the substrate P via the projection optical system PL is set as a mask M in accordance with FIG. A mask M1 (M2 in FIGS. 9 and 10) to be a panel is arranged with a predetermined interval Sx in the scanning exposure direction (θ direction). Each mask M1 (M2 in FIGS. 9 and 10) includes a display screen area DPA having a diagonal length Le and a peripheral circuit area TAB surrounding the same, as in FIG.
　まず、図８に示す例から詳述する。図８において、最も大きい長方形は、円筒ドラム２１の外周面であるマスク面Ｐ１である。マスク面Ｐ１は、切断線９４をθ方向の原点としたとき、０°から３６０°までの回転角に渡ってθ方向に長さπφを有し、第１軸ＡＸ１と平行なＹ方向に長さＬａを有する。マスク面Ｐ１の内側に破線で示した領域は、基板Ｐ上に露光すべき全領域（図３中の露光領域Ａ７）に対応したマスクＭとなる。マスクＭ内にθ方向に並べられる３つのマスクＭ１は、表示画面領域ＤＰＡの長辺方向がＹ方向となり、短辺方向がθ方向となるように配置される。また、各マスクＭ１のθ方向に隣接する間隔Ｓｘ内には、円筒ドラム２１上のマスクＭ（又はＭ１）の位置を特定する為のアライメントマーク（マスクマーク）９６が、Ｙ方向の３ヶ所に離散的に設けられている。こられのマスクマーク９６は、円筒ドラム２１の周方向の所定位置に外周面（マスク面Ｐ１）に対向して配置された不図示のマスクアライメント光学系を介して検出される。露光装置Ｕ３は、マスクアライメント光学系によって検出される各マスクマーク９６の位置に基づいて、円筒ドラム２１全体、或いは各マスクＭ１毎の回転方向（θ方向）の位置ずれとＹ方向の位置ずれとを計測する。 First, the example shown in FIG. 8 will be described in detail. In FIG. 8, the largest rectangle is a mask surface P <b> 1 that is the outer peripheral surface of the cylindrical drum 21. The mask surface P1 has a length πφ in the θ direction over a rotation angle from 0 ° to 360 ° when the cutting line 94 is the origin in the θ direction, and is long in the Y direction parallel to the first axis AX1. Has La. A region indicated by a broken line inside the mask surface P1 is a mask M corresponding to the entire region to be exposed on the substrate P (exposure region A7 in FIG. 3). The three masks M1 arranged in the θ direction in the mask M are arranged so that the long side direction of the display screen area DPA is the Y direction and the short side direction is the θ direction. In addition, within an interval Sx adjacent to each mask M1 in the θ direction, alignment marks (mask marks) 96 for specifying the position of the mask M (or M1) on the cylindrical drum 21 are provided at three positions in the Y direction. Discretely provided. These mask marks 96 are detected through a mask alignment optical system (not shown) disposed at a predetermined position in the circumferential direction of the cylindrical drum 21 so as to face the outer peripheral surface (mask surface P1). Based on the position of each mask mark 96 detected by the mask alignment optical system, the exposure apparatus U3 determines the positional deviation in the rotational direction (θ direction) and the positional deviation in the Y direction for the entire cylindrical drum 21 or each mask M1. Measure.
　一般に、基板Ｐ上に表示パネルのデバイスを形成する場合は多数の層を積層する必要があり、そのため露光装置は、基板Ｐ上のどの位置にマスクＭ（又はＭ１）のパターンを露光したかを特定する為のアライメントマーク（基板マーク）を、マスクＭ（又はＭ１）と共に基板Ｐ上に転写する。図８では、そのような基板マーク９６ａが各マスクＭ１のＹ方向の両端部分であって、θ方向に離れた３ヶ所の各々に形成されている。基板マーク９６ａが占有するマスク（又は基板Ｐ）上の領域は、Ｙ方向の幅として数ｍｍ程度である。従って、基板Ｐ上に露光すべきマスク面Ｐ１上のマスクＭのＹ方向の長さＬは、各マスクＭ１のＹ方向の寸法と、各マスクＭ１のＹ方向の両側に確保される基板マーク９６ａの領域のＹ方向の寸法との合計となる。 In general, when forming a display panel device on a substrate P, it is necessary to stack a large number of layers. Therefore, the exposure apparatus determines on which position on the substrate P the pattern of the mask M (or M1) has been exposed. An alignment mark (substrate mark) for identification is transferred onto the substrate P together with the mask M (or M1). In FIG. 8, such a substrate mark 96a is formed at each of the three positions separated in the θ direction on both end portions in the Y direction of each mask M1. The area on the mask (or the substrate P) occupied by the substrate mark 96a is about several mm as the width in the Y direction. Therefore, the length L in the Y direction of the mask M on the mask surface P1 to be exposed on the substrate P is the dimension in the Y direction of each mask M1 and the substrate mark 96a secured on both sides of each mask M1 in the Y direction. It is the sum total of the dimension of the area | region of the Y direction.
　また、マスク面Ｐ１上のマスクＭ全体のθ方向の長さＬｂは、各マスクＭ１のθ方向の寸法と各間隔ＳｘのＹ方向の寸法とを合計した長さをＰｘとすると、Ｌｂ＝３Ｐｘとなる。先の図７のように、単一の表示パネルに対応したマスクＭを配置する場合は、所定長の余白部９２を設けるのが良いが、図８のように、θ方向に間隔Ｓｘを設けて複数のマスクＭ１を配置する場合は、余白部９２のθ方向の長さをゼロにすることができる。すなわち、各マスクＭ１のθ方向の長さは表示パネルのサイズによって自ずと決まり、間隔Ｓｘとして必要な最小寸法も予め決められるので、φ＝３Ｐｘ／πの関係を満たすように、円筒ドラム２１の直径φを設定すれば良い。逆に、露光装置Ｕ３に装着可能な円筒ドラム２１の直径φの範囲が概ね決まっている場合は、間隔Ｓｘの寸法を変える（大きくする）ことで調整することができる。 The length Lb in the θ direction of the entire mask M on the mask surface P1 is Lb = 3Px, where Px is a total length of the dimension in the θ direction of each mask M1 and the dimension in the Y direction of each interval Sx. It becomes. As shown in FIG. 7, when the mask M corresponding to a single display panel is arranged, it is preferable to provide a margin 92 having a predetermined length. However, as shown in FIG. 8, an interval Sx is provided in the θ direction. When a plurality of masks M1 are arranged, the length of the blank portion 92 in the θ direction can be made zero. That is, the length of each mask M1 in the θ direction is naturally determined by the size of the display panel, and the minimum dimension required as the interval Sx is also determined in advance. φ should be set. On the other hand, when the range of the diameter φ of the cylindrical drum 21 that can be mounted on the exposure apparatus U3 is generally determined, it can be adjusted by changing (increasing) the dimension of the interval Sx.
　ここで、図８のようなマスクＭの具体的な寸法の一例を説明する。図８において、マスクＭ１の表示画面領域ＤＰＡの対角長Ｌｅを３２インチ（８１．２８ｃｍ）、周辺回路領域ＴＡＢのＹ方向、θ方向の各寸法を表示画面領域ＤＰＡの寸法の１０％程度とし、基板マーク９６ａを形成する領域のＹ方向の寸法を０．５ｃｍ（両側を合せて１ｃｍ）とした場合を想定する。アスペクト比１６：９の表示パネルでは、マスクＭ１の短辺寸法が４８．８３ｃｍ、長辺寸法が７７．９３ｃｍとなり、アスペクト比２：１の表示パネルでは、マスクＭ１の短辺寸法が４３．８３ｃｍ、長辺寸法が７９．９７ｃｍとなる。余白部９２の寸法をゼロとし、Ｌｂ＝πφ＝３Ｐｘを満たすように、３つのマスクＭ１と３つの間隔Ｓｘをθ方向に並べる場合、マスクＭ１のθ方向の長さをＬｇとすると、間隔Ｓｘは、Ｓｘ＝（Ｌｂ－３Ｌｇ）／３で求まる。 Here, an example of specific dimensions of the mask M as shown in FIG. 8 will be described. In FIG. 8, the diagonal length Le of the display screen area DPA of the mask M1 is 32 inches (81.28 cm), and each dimension in the Y direction and θ direction of the peripheral circuit area TAB is about 10% of the dimension of the display screen area DPA. Assume that the dimension in the Y direction of the region where the substrate mark 96a is to be formed is 0.5 cm (1 cm on both sides). In the display panel having an aspect ratio of 16: 9, the short side dimension of the mask M1 is 48.83 cm and the long side dimension is 77.93 cm. In the display panel having an aspect ratio of 2: 1, the short side dimension of the mask M1 is 43.83 cm. The long side dimension is 79.97 cm. When arranging the three masks M1 and the three intervals Sx in the θ direction so that the size of the blank portion 92 is zero and satisfies Lb = πφ = 3Px, if the length of the mask M1 in the θ direction is Lg, the interval Sx Is obtained by Sx = (Lb−3Lg) / 3.
　そこで、アスペクト比１６：９の表示パネル用のマスクＭ１と、アスペクト比２：１の表示パネル用のマスクＭ１とのいずれもが、同一径の円筒ドラム２１のマスク面Ｐ１上に配置可能とする場合には、円筒ドラム２１の直径φを４３ｃｍ程度にすると良い。この場合、アスペクト比１６：９の表示パネルではマスクＭ１の間の間隔Ｓｘを１．１９６ｃｍ、アスペクト比２：１の表示パネルではマスクＭ１の間の間隔Ｓｘを５．０４５ｃｍに設定すれば良い。 Therefore, both the display panel mask M1 having an aspect ratio of 16: 9 and the display panel mask M1 having an aspect ratio of 2: 1 can be arranged on the mask surface P1 of the cylindrical drum 21 having the same diameter. In this case, the diameter φ of the cylindrical drum 21 is preferably about 43 cm. In this case, in the display panel having an aspect ratio of 16: 9, the interval Sx between the masks M1 may be set to 1.196 cm, and in the display panel having an aspect ratio of 2: 1, the interval Sx between the masks M1 may be set to 5.045 cm.
　マスク面Ｐ１上のマスクＭのＹ方向の長さＬは、マスクＭ１のＹ方向寸法と基板マーク９６ａの形成領域のＹ方向寸法（１ｃｍ）との合計であるので、アスペクト比１６：９の表示パネル用のマスクＭでは、Ｌ＝７８．９３ｃｍ、アスペクト比２：１の表示パネル用のマスクＭでは、Ｌ＝８０．９７ｃｍとなる。従って、円筒ドラム２１の直径φ（４３ｃｍ）とマスクＭのＹ方向の長さＬとの比は、アスペクト比１６：９の表示パネル用の円筒ドラム２１では、Ｌ／φ＝１．８４、アスペクト比２：１の表示パネル用の円筒ドラム２１では、Ｌ／φ＝１．８８となる。いずれの場合も、その比Ｌ／φは、１．３～３．８の範囲に収まっている。 Since the length L in the Y direction of the mask M on the mask surface P1 is the sum of the Y direction dimension of the mask M1 and the Y direction dimension (1 cm) of the formation region of the substrate mark 96a, an aspect ratio of 16: 9 is displayed. In the panel mask M, L = 78.93 cm, and in the display panel mask M having an aspect ratio of 2: 1, L = 80.97 cm. Accordingly, the ratio of the diameter φ (43 cm) of the cylindrical drum 21 to the length L in the Y direction of the mask M is L / φ = 1.84 in the display panel cylindrical drum 21 having an aspect ratio of 16: 9. In the cylindrical drum 21 for a display panel having a ratio of 2: 1, L / φ = 1.88. In any case, the ratio L / φ is in the range of 1.3 to 3.8.
　また、アスペクト比１６：９の表示パネルのパターンを基板Ｐ上に露光する場合と、アスペクト比２：１の表示パネルのパターンを基板Ｐ上に露光する場合とで、基板Ｐ上の間隔Ｓｘのθ方向の寸法を必要最小限にする場合は、自ずと円筒ドラム２１の直径φを変える必要がある。例えば、間隔Ｓｘを２ｃｍにする場合、アスペクト比１６：９の表示パネル用のマスクＭ１が形成される円筒ドラム２１の直径φは、πφ＝３（Ｌｇ＋Ｓｘ）の関係から、φ≧４３．７７ｃｍとなる。一方、アスペクト比２：１の表示パネル用のマスクＭ１が形成される円筒ドラム２１の直径φは、φ≧４０．１ｃｍとなる。この場合も、アスペクト比１６：９の表示パネル用の円筒ドラム２１では、比Ｌ／φ＝１．８０、アスペクト比２：１の表示パネル用の円筒ドラム２１では、比Ｌ／φ＝２．０２となり、１．３～３．８の範囲に収まる。 In addition, when the pattern of the display panel having an aspect ratio of 16: 9 is exposed on the substrate P and when the pattern of the display panel having an aspect ratio of 2: 1 is exposed on the substrate P, the spacing Sx on the substrate P is set. In order to minimize the dimension in the θ direction, it is necessary to change the diameter φ of the cylindrical drum 21 by itself. For example, when the interval Sx is 2 cm, the diameter φ of the cylindrical drum 21 on which the display panel mask M1 having an aspect ratio of 16: 9 is formed is φ ≧ 43.77 cm from the relationship of πφ = 3 (Lg + Sx). Become. On the other hand, the diameter φ of the cylindrical drum 21 on which the display panel mask M1 having an aspect ratio of 2: 1 is formed is φ ≧ 40.1 cm. Also in this case, the ratio L / φ = 1.80 in the display panel cylindrical drum 21 having an aspect ratio of 16: 9, and the ratio L / φ = 2.2 in the display panel cylindrical drum 21 having an aspect ratio of 2: 1. 02, which falls within the range of 1.3 to 3.8.
　尚、そのように露光装置Ｕ３に装着すべき円筒ドラム２１（マスクＭ）の直径φが変わる場合に備えて、露光装置Ｕ３には、その直径φの差分の１／２程度、円筒ドラム２１の第１軸ＡＸ１のＺ方向の位置をシフトさせる機構が設けられる。上記の例では、直径φの差は、３．６７ｃｍであるので、円筒ドラム２１の第１軸ＡＸ１（シャフトＳＦ）はＺ方向に１．８３５ｃｍ程度シフトさせて支持される。さらに、円筒ドラム２１の第１軸ＡＸ１のＺ方向へのシフト量が大きい場合は、図４中に示したシリンドリカルレンズ５４を、図５のような照明条件を満たすような凸円筒面の曲率を持つものに変更し、第１偏向部材７０の第１反射面（平面鏡）Ｐ３の角度α°を調整すると共に、偏光ビームスプリッタＰＢＳと１／４波長板４１を全体的にＸＺ面内で微小量傾ける必要もある。 Incidentally, in preparation for the case where the diameter φ of the cylindrical drum 21 (mask M) to be mounted on the exposure apparatus U3 changes, the exposure apparatus U3 has about 1/2 of the difference of the diameter φ. A mechanism for shifting the position of the first axis AX1 in the Z direction is provided. In the above example, since the difference in diameter φ is 3.67 cm, the first axis AX1 (shaft SF) of the cylindrical drum 21 is supported by being shifted by about 1.835 cm in the Z direction. Furthermore, when the shift amount of the first axis AX1 of the cylindrical drum 21 in the Z direction is large, the cylindrical lens 54 shown in FIG. 4 has a curvature of the convex cylindrical surface that satisfies the illumination condition as shown in FIG. In addition to adjusting the angle α ° of the first reflecting surface (plane mirror) P3 of the first deflecting member 70, the polarization beam splitter PBS and the quarter-wave plate 41 are entirely small in the XZ plane. You also need to tilt.
　以上、図８のように円筒ドラム２１に形成されるマスクＭ（３つのマスクＭ１を含む）には、基板Ｐ上に転写される表示パネル用のパターン（マスクＭ１）に付随して、複数の基板マーク９６ａがθ方向（走査露光方向）に設けられている。従って、露光装置Ｕ３によって、基板Ｐ上に表示パネル用のパターン（マスクＭ１）と共に複数の基板マーク９６ａを順次転写しておくと、露光時の各種問題を確認することができる。例えば、基板Ｐ上に転写された基板マーク９６ａを用いて、基板Ｐ上に生じた欠陥（例えばゴミ付着）の位置を特定したり、或いはマスクのパターンニング誤差、フォーカス誤差、重ね合わせ露光時の重ね誤差等の各種オフセット誤差を計測することができる。計測されたオフセット誤差は、マスク全体の管理に加えて、円筒マスク２１上の各マスクＭ１の位置管理、基板Ｐ上に転写される各表示パネルのパターン（マスクＭ１）の位置管理（補正）に利用される。 As described above, the mask M (including the three masks M1) formed on the cylindrical drum 21 as shown in FIG. 8 includes a plurality of display panel patterns (masks M1) transferred onto the substrate P. A substrate mark 96a is provided in the θ direction (scanning exposure direction). Therefore, if the plurality of substrate marks 96a are sequentially transferred onto the substrate P together with the display panel pattern (mask M1) by the exposure apparatus U3, various problems during exposure can be confirmed. For example, the position of a defect (for example, dust adhesion) generated on the substrate P is specified using the substrate mark 96a transferred onto the substrate P, or a mask patterning error, focus error, overlay exposure is performed. Various offset errors such as overlay errors can be measured. In addition to managing the entire mask, the measured offset error is used for position management of each mask M1 on the cylindrical mask 21 and position management (correction) of each display panel pattern (mask M1) transferred onto the substrate P. Used.
　図９は、例えばアスペクト比２：１の表示パネル用のマスクＭ２をＹ方向が表示画面領域ＤＰＡの長辺となるように、θ方向に４個並べて円筒ドラム２１のマスク面Ｐ１上に配置した例を示す。各マスクＭ２のθ方向の側辺（長辺）には間隔Ｓｘが設けられ、マスクマーク９６、基板マーク９６ａも先の図８と同様に設けられる。この場合、マスク面Ｐ１の周方向（θ方向）の全長πφ（＝Ｌｂ）は、πφ＝４Ｐｘ＝４（Ｌｇ＋Ｓｘ）となる。ここで、表示画面領域ＤＰＡの画面サイズを２４インチ（Ｌｅ＝６０．９６ｃｍ）とし、周辺回路領域ＴＡＢのθ方向の合計幅を表示画面領域ＤＰＡのθ方向長さの１０％、周辺回路領域ＴＡＢのＹ方向の合計幅を表示画面領域ＤＰＡのＹ方向長さの２０％、さらに、マスクＭ２のＹ方向の両端部の各々に配置される基板マーク９６ａの形成領域のＹ方向の合計幅を１ｃｍとする。 In FIG. 9, for example, four masks M2 for a display panel having an aspect ratio of 2: 1 are arranged on the mask surface P1 of the cylindrical drum 21 so as to be arranged in the θ direction so that the Y direction is the long side of the display screen area DPA. An example is shown. An interval Sx is provided on the side (long side) in the θ direction of each mask M2, and the mask mark 96 and the substrate mark 96a are also provided in the same manner as in FIG. In this case, the total length πφ (= Lb) in the circumferential direction (θ direction) of the mask surface P1 is πφ = 4Px = 4 (Lg + Sx). Here, the screen size of the display screen area DPA is 24 inches (Le = 60.96 cm), the total width in the θ direction of the peripheral circuit area TAB is 10% of the length of the display screen area DPA in the θ direction, and the peripheral circuit area TAB. The total width in the Y direction of the display screen region DPA is 20% of the length in the Y direction, and the total width in the Y direction of the formation region of the substrate mark 96a disposed at each of both ends in the Y direction of the mask M2 is 1 cm. And
　この場合、表示画面領域ＤＰＡのサイズは、長辺５４．５２ｃｍ、短辺２７．２６ｃｍであるから、マスク面Ｐ１上の露光用のマスクＭのＹ方向の全長Ｌは、マスクＭ２と基板マーク９６ａの形成領域とを含み、Ｌ＝６６．４３ｃｍとなる。また、マスク面Ｐ１上のマスクＭ２のθ方向の長さＬｇは、Ｌｇ＝２９．９９ｃｍとなるから、間隔Ｓｘを１ｃｍとすると、マスクＭ（円筒ドラム２１）の直径φは、πφ≧４Ｐｘより、３９．４６ｃｍ以上となる。従って、図９のように、アスペクト比２：１の表示パネル用のマスクＭ２の４面分を円筒ドラム２１に設けた場合も、比Ｌ／φは１．６７となり、１．３～３．８の範囲に収まる。 In this case, since the size of the display screen area DPA is 54.52 cm in the long side and 27.26 cm in the short side, the total length L in the Y direction of the mask M for exposure on the mask surface P1 is the mask M2 and the substrate mark 96a. And L = 66.43 cm. The length Lg in the θ direction of the mask M2 on the mask surface P1 is Lg = 29.99 cm. Therefore, when the interval Sx is 1 cm, the diameter φ of the mask M (cylindrical drum 21) is from πφ ≧ 4Px. 39.46 cm or more. Accordingly, as shown in FIG. 9, even when four portions of the display panel mask M2 having an aspect ratio of 2: 1 are provided on the cylindrical drum 21, the ratio L / φ is 1.67, and 1.3-3. It falls within the range of 8.
　図１０は、図９に示したマスクＭ２を９０°回転させて長辺をθ方向に向けて配置し、θ方向に２つ、Ｙ方向に２つの計４つをマスク面Ｐ１上に配列した場合の例を示す。またここでは、Ｙ方向に並ぶ２つのマスクＭの間に、基板マーク９６ａの形成領域が設けられるものとする。従って、基板マーク９６ａの形成領域のＹ方向の合計幅を２ｃｍとすると、マスク面Ｐ１上に形成されるマスクＭのＹ方向の全長（短辺）Ｌは、６１．９８ｃｍとなり、マスクＭのθ方向の全長（長辺）πφは１３２．８６ｃｍ、マスクＭ（円筒マスク２１）の直径φは４２．２９ｃｍ以上となり、比Ｌ／φは１．４７となる。 In FIG. 10, the mask M2 shown in FIG. 9 is rotated by 90 °, and the long sides are arranged in the θ direction, and two in the θ direction and two in the Y direction are arranged on the mask surface P1. An example of the case is shown. Here, it is assumed that a formation region of the substrate mark 96a is provided between two masks M arranged in the Y direction. Accordingly, if the total width in the Y direction of the formation region of the substrate mark 96a is 2 cm, the total length (short side) L in the Y direction of the mask M formed on the mask surface P1 is 61.98 cm, and θ of the mask M The total length (long side) πφ in the direction is 132.86 cm, the diameter φ of the mask M (cylindrical mask 21) is 42.29 cm or more, and the ratio L / φ is 1.47.
　ところで、４つのマスクＭ２を図９、又は図１０のように配置する場合、間隔Ｓｘを調整すれば、円筒ドラム２１の直径φとマスク面Ｐ１のＹ方向の寸法Ｌａを一定にしておくことができる。図９と図１０の場合に、マスクＭとしてＹ方向の長さＬが大きいのは、図９の場合のＬ＝６６．４３ｃｍであり、円筒ドラム２１（マスクＭ）として直径φが大きいのは、図１０の場合のφ≧４２．２９ｃｍである。そこで、外周面（マスク面Ｐ１）のＹ方向の寸法ＬａがＬａ≧６６．４３ｃｍ、直径φがφ≧４２．３ｃｍの円筒ドラム２１を用いれば、図９と図１０のいずれの配置であっても、マスクＭ２の４面取りが可能である。この場合も、比Ｌ／φは１．５７となり、１．３～３．８の範囲になる。 When the four masks M2 are arranged as shown in FIG. 9 or FIG. 10, the diameter φ of the cylindrical drum 21 and the dimension La in the Y direction of the mask surface P1 can be kept constant by adjusting the interval Sx. it can. 9 and 10, the length L in the Y direction as the mask M is large as L = 66.43 cm in the case of FIG. 9, and the diameter φ is large as the cylindrical drum 21 (mask M). In the case of FIG. 10, φ ≧ 42.29 cm. Therefore, if the cylindrical drum 21 having a dimension La in the Y direction of the outer peripheral surface (mask surface P1) of La ≧ 66.43 cm and a diameter φ of φ ≧ 42.3 cm is used, the arrangement of FIGS. 9 and 10 is obtained. Also, it is possible to chamfer the mask M2. Also in this case, the ratio L / φ is 1.57, which is in the range of 1.3 to 3.8.
　図８から図１０に示すように、マスク面Ｐ１には、種々の配置規則で表示デバイス用のマスクパターン（マスクＭ、Ｍ１、Ｍ２）が配置される可能性がある。これに対して、円筒ドラム（マスク保持ドラム）２１のマスク面Ｐ１（外周面）の走査露光方向（θ方向）と直交する方向（Ｙ方向）の長さＬと円筒ドラム２１の直径φとの関係が、１．３≦Ｌ／φ≦３．８の関係を満たすことで、図８から図１０のように、多様なサイズの表示パネルのマスクパターン（マスクＭ１、Ｍ２）を複数配置した場合も、隙間（間隔Ｓｘ）を少なくした状態でマスクパターンを配置することができる。 As shown in FIG. 8 to FIG. 10, display device mask patterns (masks M, M1, M2) may be arranged on the mask surface P1 according to various arrangement rules. On the other hand, the length L in the direction (Y direction) orthogonal to the scanning exposure direction (θ direction) of the mask surface P1 (outer peripheral surface) of the cylindrical drum (mask holding drum) 21 and the diameter φ of the cylindrical drum 21. When the relationship satisfies the relationship of 1.3 ≦ L / φ ≦ 3.8, a plurality of mask patterns (masks M1 and M2) of display panels of various sizes are arranged as shown in FIGS. However, the mask pattern can be arranged in a state where the gap (interval Sx) is reduced.
　また、円筒ドラム２１は、１．３≦Ｌ／φ≦３．８の関係を満たすことで、照明光学系ＩＬ及び投影光学系ＰＬの数の増加を抑制しつつ、装置の大型化を抑制することができる。つまり、円筒ドラム２１が細長くなり、照明光学系ＩＬ及び投影光学系ＰＬの数が増加することを抑制できる。また、円筒ドラム２１の直径φが大きくなって、装置のＺ方向の寸法が大きくなることを抑制することができる。 Further, the cylindrical drum 21 satisfies the relationship of 1.3 ≦ L / φ ≦ 3.8, thereby suppressing an increase in the size of the apparatus while suppressing an increase in the number of illumination optical systems IL and projection optical systems PL. be able to. That is, it is possible to prevent the cylindrical drum 21 from becoming elongated and increasing the number of illumination optical systems IL and projection optical systems PL. Moreover, it can suppress that the diameter (phi) of the cylindrical drum 21 becomes large and the dimension of the Z direction of an apparatus becomes large.
　ここで、図７のように、アスペクト比２：１の表示パネル用の１面取りのマスクＭを、円筒ドラム２１の外周面（マスク面Ｐ１）の全面に形成する場合に、図６、図７中の余白部９２のθ方向の寸法をゼロとし、マスク面Ｐ１のＹ方向（第１軸ＡＸ１方向）の寸法ＬａをＬａ＝Ｌとする場合を想定する。また、先に説明したように、画面表示領域ＤＰＡの周囲に配置される周辺回路領域ＴＡＢは、画面表示領域ＤＰＡの２０％程度となる場合がある。しかしながら、周辺回路領域ＴＡＢの寸法割合は、実際のパターンの仕様、設計によって画面表示領域ＤＰＡの周囲のどの部分に回路となる端子部が配置されるかによって変化する。そのため、正確には特定できないが、マスクＭとしての縦横比がより拡大する方向に増えるものとし、画面表示領域ＤＰＡの短辺に隣接する周辺回路領域ＴＡＢの合計幅が、画面表示領域ＤＰＡの長辺Ｌｄの２０％程度になるものと仮定する。また画面表示領域ＤＰＡの長辺に隣接する周辺回路領域ＴＡＢの合計幅は、画面表示領域ＤＰＡの短辺Ｌｃの０～１０％程度であると仮定する。そのような仮定の下で、画面表示領域ＤＰＡがアスペクト比２：１の５０インチ表示パネルの場合、画面表示領域ＤＰＡの長辺Ｌｄは１１３．５９ｃｍ、短辺Ｌｃは５６．８ｃｍとなる。従って、図７中のマスクＭのθ方向の長さＬｂ（＝πφ）は１３６．３１ｃｍ、円筒ドラム２１（マスクＭ）の直径φは４３．３９ｃｍ、Ｙ方向の長さＬ（＝Ｌａ）は５６．８～６２．４８ｃｍとなり、長さＬと直径φの比Ｌ／φは、１．３０～１．４４となる。このように、アスペクト比の大きい表示パネル用のマスクの全体を、円筒ドラム２１の外周面（マスク面Ｐ１）の全面に１面取りで形成する場合に、比Ｌ／φは最も小さな値１．３となる。尚、画面表示領域ＤＰＡのアスペクト比２：１の場合で、マスクＭが長辺方向のみに周辺回路領域ＴＡＢの幅を含んで２０％大きくなる場合は、図７のような１面取りのマスクＭの縦横比（Ｌｂ／Ｌ）が２．４になることであり、Ｌｂ＝πφより、比Ｌ／φ＝π／２．４≒１．３０として導かれる。 Here, as shown in FIG. 7, when a one-sided mask M for a display panel having an aspect ratio of 2: 1 is formed on the entire outer peripheral surface (mask surface P1) of the cylindrical drum 21, FIGS. Assume that the dimension of the inner blank portion 92 in the θ direction is zero and the dimension La of the mask surface P1 in the Y direction (first axis AX1 direction) is La = L. Further, as described above, the peripheral circuit area TAB arranged around the screen display area DPA may be about 20% of the screen display area DPA. However, the dimensional ratio of the peripheral circuit area TAB varies depending on which part of the periphery of the screen display area DPA is arranged with the terminal portion depending on the actual pattern specification and design. Therefore, although it cannot be specified accurately, it is assumed that the aspect ratio as the mask M increases in a further expanding direction, and the total width of the peripheral circuit area TAB adjacent to the short side of the screen display area DPA is the length of the screen display area DPA. It is assumed that it is about 20% of the side Ld. It is assumed that the total width of the peripheral circuit area TAB adjacent to the long side of the screen display area DPA is about 0 to 10% of the short side Lc of the screen display area DPA. Under such an assumption, when the screen display area DPA is a 50-inch display panel having an aspect ratio of 2: 1, the long side Ld of the screen display area DPA is 113.59 cm and the short side Lc is 56.8 cm. Accordingly, the length Lb (= πφ) in the θ direction of the mask M in FIG. 7 is 136.31 cm, the diameter φ of the cylindrical drum 21 (mask M) is 43.39 cm, and the length L (= La) in the Y direction is 56.8 to 62.48 cm, and the ratio L / φ of the length L to the diameter φ is 1.30 to 1.44. In this way, when the entire mask for a display panel having a large aspect ratio is formed on the entire outer peripheral surface (mask surface P1) of the cylindrical drum 21, the ratio L / φ is the smallest value 1.3. It becomes. When the aspect ratio of the screen display area DPA is 2: 1 and the mask M is increased by 20% including the width of the peripheral circuit area TAB only in the long side direction, the one-sided mask M as shown in FIG. The aspect ratio (Lb / L) is 2.4, and the ratio L / φ = π / 2.4≈1.30 is derived from Lb = πφ.
　また、印刷機のように、図７中のマスクＭを９０°回転させて円筒ドラム２１のマスク面Ｐ１のほぼ全面に配置させる場合は、先に説明したとおり、比Ｌ／φが大きくなり過ぎる。上記の条件のように、画面表示領域ＤＰＡのアスペクト比２：１の場合で、１面取りのマスクＭが長辺方向のみに周辺回路領域ＴＡＢの幅を含んで２０％大きくなり、余白部９２のθ方向の寸法がゼロである場合、Ｌ／Ｌｂ（πφ）＝２．４／１となり、比Ｌ／φは７．５４となる。この場合、先に例示した５０インチの表示パネル用の１面取りのマスクＭの場合、Ｙ方向の長さＬが１３６．３１ｃｍ、θ方向の長さＬｂ（πφ）が５６．８ｃｍとなり、円筒ドラム２１（マスクＭ）の直径φは１８．１ｃｍとなる。このように、マスクＭの長辺方向をθ方向にした場合とＹ方向にした場合とで、比Ｌ／φは大きく変化する。 Further, when the mask M in FIG. 7 is rotated by 90 ° and disposed almost on the entire mask surface P1 of the cylindrical drum 21 as in the printing press, the ratio L / φ becomes too large as described above. . In the case where the aspect ratio of the screen display area DPA is 2: 1 as in the above-described conditions, the one-sided mask M is increased by 20% including the width of the peripheral circuit area TAB only in the long side direction. When the dimension in the θ direction is zero, L / Lb (πφ) = 2.4 / 1 and the ratio L / φ is 7.54. In this case, in the case of the single-sided mask M for the 50-inch display panel exemplified above, the length L in the Y direction is 136.31 cm, and the length Lb (πφ) in the θ direction is 56.8 cm. The diameter φ of 21 (mask M) is 18.1 cm. As described above, the ratio L / φ varies greatly depending on whether the long side direction of the mask M is the θ direction or the Y direction.
　露光装置Ｕ３の投影光学系ＰＬは、円筒ドラム２１の直径φが大きく変化する場合、特に直径φが小さくなる場合には、射影によるディストーション誤差や円弧による投影像面の変化の点が大きくなるため、良好な投影像を基板Ｐ上に露光することが困難になる。その場合は、例えば図１１のように、アスペクト比２：１の画面表示領域ＤＰＡを有する表示パネル用の長辺方向をＹ方向としたマスクＭ２の２つをθ方向に並べると良い。 In the projection optical system PL of the exposure apparatus U3, when the diameter φ of the cylindrical drum 21 changes greatly, especially when the diameter φ decreases, the distortion error due to projection and the point of change in the projected image plane due to the arc increase. It becomes difficult to expose a good projection image on the substrate P. In this case, for example, as shown in FIG. 11, two masks M2 having a long side direction for a display panel having a screen display area DPA with an aspect ratio of 2: 1 in the Y direction may be arranged in the θ direction.
　図１１において、２つのマスクＭ２の各々は、アスペクト比２：１の画面表示領域ＤＰＡと、画面表示領域ＤＰＡのＹ方向の両側に配置される周辺回路領域ＴＡＢとを含む。周辺回路領域ＴＡＢのＹ方向の幅の合計は、画面表示領域ＤＰＡの長辺の寸法Ｌｄの２０％とし、マスクＭ２の右隣りには間隔Ｓｘが設けられるものとする。マスクＭ２の周囲に基板マーク９６ａやマスクマーク９６を配置しないと仮定とすると、２つのマスクＭ２と間隔Ｓｘとを含むマスクＭの全体（マスク面Ｐ１）のＹ方向の寸法ＬはＬ＝１．２・Ｌｄ、θ方向の寸法πφ（Ｌｂ）はπφ＝２（Ｌｃ＋Ｓｘ）となる。画面表示領域ＤＰＡのアスペクト比Ａｓｐを、Ａｓｐ＝Ｌｄ／Ｌｃとすると、比Ｌ／φは以下のように表される。
Ｌ／φ＝０．６・π・Ａｓｐ・Ｌｃ／（Ｌｃ＋Ｓｘ） In FIG. 11, each of the two masks M2 includes a screen display area DPA with an aspect ratio of 2: 1 and peripheral circuit areas TAB arranged on both sides in the Y direction of the screen display area DPA. It is assumed that the total width in the Y direction of the peripheral circuit area TAB is 20% of the long side dimension Ld of the screen display area DPA, and a space Sx is provided on the right side of the mask M2. Assuming that the substrate mark 96a and the mask mark 96 are not arranged around the mask M2, the dimension L in the Y direction of the entire mask M (mask surface P1) including the two masks M2 and the interval Sx is L = 1. The dimension πφ (Lb) in the 2 · Ld, θ direction is πφ = 2 (Lc + Sx). When the aspect ratio Asp of the screen display area DPA is Asp = Ld / Lc, the ratio L / φ is expressed as follows.
L / φ = 0.6 · π · Asp · Lc / (Lc + Sx)
　ここで、間隔Ｓｘをゼロにすると、比Ｌ／φは、Ｌ／φ＝０．６・π・Ａｓｐとなり、アスペクト比２：１の表示パネル用のマスクＭ２の２つを図１１のような方向で配置した場合、円筒ドラム２１（マスク面Ｐ１）の直径φと第１軸ＡＸ１方向の長さＬ（＝Ｌａ）との比Ｌ／φは３．７７（約３．８）となる。この場合、画面表示領域ＤＰＡ（２：１）が５０インチであれば、直径φは３６．１６ｃｍ、長さＬ（Ｌａ）は１３６．３１ｃｍとなる。同様に、図１１に示したマスクＭ２を、アスペクト比１６：９の表示パネル用とした場合は、間隔Ｓｘをゼロとすると、Ｌ／φ＝０．６・π・Ａｓｐの関係より、比Ｌ／φは３．３５となる。この場合、画面表示領域ＤＰＡ（１６：９）が５０インチであれば、直径φは３９．６４ｃｍ、長さＬ（Ｌａ）は１３２．８３ｃｍとなる。 Here, when the interval Sx is set to zero, the ratio L / φ becomes L / φ = 0.6 · π · Asp, and two masks M2 for a display panel having an aspect ratio of 2: 1 are as shown in FIG. When arranged in the direction, the ratio L / φ between the diameter φ of the cylindrical drum 21 (mask surface P1) and the length L (= La) in the first axis AX1 direction is 3.77 (about 3.8). In this case, if the screen display area DPA (2: 1) is 50 inches, the diameter φ is 36.16 cm and the length L (La) is 136.31 cm. Similarly, when the mask M2 shown in FIG. 11 is used for a display panel with an aspect ratio of 16: 9, if the interval Sx is zero, the ratio L / φ = 0.6 · π · Asp / Φ is 3.35. In this case, if the screen display area DPA (16: 9) is 50 inches, the diameter φ is 39.64 cm and the length L (La) is 132.83 cm.
　以上のように、画面表示領域ＤＰＡの短辺方向が円筒ドラム２１の周方向（θ方向）に向き、長辺方向が円筒ドラム２１の第１軸ＡＸ１の方向（Ｙ方向）に向くようにマスクＭを配置する場合でも、２つ以上の同じマスクＭ２をθ方向に並べることで、比Ｌ／φを３．８以下とすることができる。尚、図１１で示したマスクＭ２を、同じ条件でθ方向にｎ個並べるとすると、先の比Ｌ／φを表す関係式は以下のようになる。
Ｌ／φ＝１．２・π・Ａｓｐ・Ｌｃ／ｎ（Ｌｃ＋Ｓｘ）
　この関係式から、製造したい表示パネル用のマスクＭ２の円筒ドラム２１上での配置、必要な間隔Ｓｘ等を、１．３≦Ｌ／φ≦３．８を満たすように設定することができる。 As described above, the mask is so arranged that the short side direction of the screen display area DPA is oriented in the circumferential direction (θ direction) of the cylindrical drum 21 and the long side direction is oriented in the direction of the first axis AX1 (Y direction) of the cylindrical drum 21. Even when M is arranged, the ratio L / φ can be made 3.8 or less by arranging two or more same masks M2 in the θ direction. If n masks M2 shown in FIG. 11 are arranged in the θ direction under the same conditions, the relational expression representing the above ratio L / φ is as follows.
L / φ = 1.2 · π · Asp · Lc / n (Lc + Sx)
From this relational expression, it is possible to set the arrangement of the mask M2 for the display panel to be manufactured on the cylindrical drum 21 and the necessary interval Sx so as to satisfy 1.3 ≦ L / φ ≦ 3.8.
　また、マスク面Ｐ１は、表示パネルデバイス用のマスクパターンのマスクＭ１、Ｍ２を、先の図８のように３つ並べたり、図９のように４つ並べたりすることで、比Ｌ／φを３．８よりも小さくして配置することが可能となる。この場合、比Ｌ／φがどのような値になるかは、Ｙ方向が長手となるようなマスクＭ１、Ｍ２をθ方向にｎ個並べる場合の関係式から求められる。表示画面領域ＤＰＡの周りの周辺回路領域ＴＡＢの幅によって、マスクＭ１、Ｍ２の縦横寸法も変わってくる為、表示画面領域ＤＰＡの長手方向の両側（又は片側）の周辺回路領域ＴＡＢによって拡大するマスクＭ１、Ｍ２の長手方向の寸法の拡大倍率をｅ１、表示画面領域ＤＰＡの短手方向の両側（又は片側）の周辺回路領域ＴＡＢによって拡大するマスクＭ１、Ｍ２の短手方向の寸法の拡大倍率をｅ２とする。 Further, the mask surface P1 has a ratio L / φ by arranging three masks M1 and M2 of the mask pattern for the display panel device as shown in FIG. 8 or four as shown in FIG. Can be arranged smaller than 3.8. In this case, the value of the ratio L / φ is obtained from the relational expression when n masks M1 and M2 having the longitudinal direction in the Y direction are arranged in the θ direction. The vertical and horizontal dimensions of the masks M1 and M2 also vary depending on the width of the peripheral circuit area TAB around the display screen area DPA. Therefore, the mask is enlarged by the peripheral circuit area TAB on both sides (or one side) in the longitudinal direction of the display screen area DPA. The magnification of the dimension in the longitudinal direction of M1 and M2 is e1, and the magnification of the dimension in the lateral direction of the masks M1 and M2 enlarged by the peripheral circuit area TAB on both sides (or one side) of the display screen area DPA in the lateral direction. Let e2.
　よって、マスク面Ｐ１のＹ方向の寸法ＬａがマスクＭ１、Ｍ２の長手方向の寸法と一致するように配置する場合、マスク面Ｐ１上のマスク領域のＹ方向の長さＬは、Ｌ＝Ｌａ＝ｅ１・Ｌｄとなる。同様に、マスク面Ｐ１上のマスク領域のθ方向の長さπφ（Ｌｂ）は、πφ＝ｎ（ｅ２・Ｌｃ＋Ｓｘ）となり、比Ｌ／φは以下の関係式で表される。
Ｌ／φ＝ｅ１・π・Ａｓｐ・Ｌｃ／ｎ（ｅ２・Ｌｃ＋Ｓｘ）
　この関係式において、図１１に示したマスクＭ２の場合は、ｎ＝２、ｅ１＝１．２、ｅ２＝１．０とした。 Accordingly, when the mask surface P1 is arranged so that the dimension La in the Y direction of the mask coincides with the dimension in the longitudinal direction of the masks M1 and M2, the length L in the Y direction of the mask region on the mask surface P1 is L = La = e1 · Ld. Similarly, the length πφ (Lb) in the θ direction of the mask region on the mask surface P1 is πφ = n (e2 · Lc + Sx), and the ratio L / φ is expressed by the following relational expression.
L / φ = e1 · π · Asp · Lc / n (e2 · Lc + Sx)
In this relational expression, in the case of the mask M2 shown in FIG. 11, n = 2, e1 = 1.2, and e2 = 1.0.
　例えば、表示パネルデバイス用のマスクＭ２の表示画面領域ＤＰＡの縦横比を１６：９（Ａｓｐ＝１．７７８）とした場合に、マスクＭ２をθ方向に３面並列に配置（ｎ＝３）すると、間隔Ｓｘがゼロの場合、比Ｌ／φは、Ｌ／φ＝ｅ１・π・Ａｓｐ／ｎ・ｅ２、となり、拡大倍率ｅ１を１．２、拡大倍率ｅ２を１．０にしたとしても、比Ｌ／φは２．２３となる。 For example, when the aspect ratio of the display screen area DPA of the mask M2 for the display panel device is 16: 9 (Asp = 1.778), the mask M2 is arranged in parallel in three planes in the θ direction (n = 3). When the interval Sx is zero, the ratio L / φ is L / φ = e1 · π · Asp / n · e2, and even if the enlargement magnification e1 is 1.2 and the enlargement magnification e2 is 1.0, The ratio L / φ is 2.23.
　さらに、先の図１０に示したように、２行２列でマスクＭ２（２４インチ）を配置した４面取り全体のマスク領域の縦横比が、θ方向に表示画面領域ＤＰＡの長辺方向を向けた１面取りのマスクＭ（５０インチ）の縦横比とほぼ同じであれば、周辺回路領域ＴＡＢの端子部の寸法の違い、或いは間隔Ｓｘの違いだけで、同一寸法の円筒ドラム２１にすることが可能になる。 Furthermore, as shown in FIG. 10, the aspect ratio of the mask area of the entire four-chamfer arrangement in which the mask M2 (24 inches) is arranged in 2 rows and 2 columns is directed to the long side direction of the display screen area DPA in the θ direction. If the aspect ratio of the single-sided mask M (50 inches) is substantially the same, the cylindrical drum 21 having the same dimensions can be formed only by the difference in the size of the terminal portion of the peripheral circuit area TAB or the difference in the spacing Sx. It becomes possible.
　以上のように、表示パネルの表示画面領域ＤＰＡのアスペクト比が１６：９や２：１等のように、２：１に近い場合、その表示パネル用のマスクＭ、Ｍ１、Ｍ２を効率的に円筒ドラム２１の外周面に配列する為には、円筒ドラム（円筒マスク）２１の走査露光方向（θ方向）と直交する方向（Ｙ方向）の長さＬと直径φとの関係が、１．３≦Ｌ／φ≦３．８を満たすようにするのが良い。さらに、単一のマスクＭ、Ｍ１、Ｍ２の縦横比が２：１に近い場合、それらのマスクを多面取りで複数配列する際は、多面取りによって占有されるマスク面Ｐ１上のマスク領域全体の縦横比（Ｌ：Ｌｂ）を、１：１に近くすると良い。また、間隔Ｓｘ（又は余白部９２）は一定にすることが好ましい。 As described above, when the aspect ratio of the display screen area DPA of the display panel is close to 2: 1 such as 16: 9 or 2: 1, the masks M, M1, and M2 for the display panel are efficiently used. In order to arrange on the outer peripheral surface of the cylindrical drum 21, the relationship between the length L of the cylindrical drum (cylindrical mask) 21 in the direction (Y direction) orthogonal to the scanning exposure direction (θ direction) and the diameter φ is 1. It is preferable to satisfy 3 ≦ L / φ ≦ 3.8. Furthermore, when the aspect ratio of the single masks M, M1, and M2 is close to 2: 1, when arranging a plurality of these masks by multi-chamfering, the entire mask area on the mask surface P1 occupied by multi-chamfering is used. The aspect ratio (L: Lb) is preferably close to 1: 1. Further, it is preferable that the interval Sx (or the blank portion 92) is constant.
　また、円筒ドラム２１の外周面（マスク面Ｐ１）の直径φと、マスク面Ｐ１に形成されるマスクパターンの第１軸ＡＸ１の方向の全長Ｌ（Ｌａ）との関係は、１．３≦Ｌ／φ≦３．８を満たすようにするのが良いが、さらには、１．３≦Ｌ／φ≦２．６とすると、上記の効果を好適に得ることができる。一例としては、図１１に示したマスクＭ２の長手方向がθ方向になるように、マスクＭ２を９０°回転させ、Ｙ方向に間隔を空けずに２個並べて２面取りにする場合、Ｌ／φ≒２．６となる。この場合、１つのマスクＭ２のθ方向の長さπφ（Ｌｂ）は、πφ＝ｅ１・Ｌｄであり、Ｙ方向に並ぶ２つのマスクＭ２の合計の長さＬは、Ｌ＝２・ｅ２・Ｌｃである。従って、Ａｓｐ＝Ｌｄ／Ｌｃより、比Ｌ／φは、Ｌ／φ＝２π・ｅ２／ｅ１・Ａｓｐとなり、ｅ１＝１．２、ｅ２＝１．０、Ａｓｐ＝２／１とすると、Ｌ／φ＝π／１．２≒２．６となる。 The relationship between the diameter φ of the outer peripheral surface (mask surface P1) of the cylindrical drum 21 and the total length L (La) in the direction of the first axis AX1 of the mask pattern formed on the mask surface P1 is 1.3 ≦ L It is preferable to satisfy /φ≦3.8. Furthermore, when 1.3 ≦ L / φ ≦ 2.6, the above-described effect can be preferably obtained. As an example, when the mask M2 is rotated 90 ° so that the longitudinal direction of the mask M2 shown in FIG. ≈2.6. In this case, the length πφ (Lb) in the θ direction of one mask M2 is πφ = e1 · Ld, and the total length L of the two masks M2 arranged in the Y direction is L = 2 · e2 · Lc. It is. Therefore, from Asp = Ld / Lc, the ratio L / φ is L / φ = 2π · e2 / e1 · Asp, where e1 = 1.2, e2 = 1.0, and Asp = 2/1. φ = π / 1.2≈2.6.
　また、露光装置Ｕ３は、マスクＭ（Ｍ１、Ｍ２）を交換可能とすることが好ましい。マスクを交換可能とすることで、種々のサイズの表示パネル、或いは電子回路基板用のマスクパターンを基板Ｐに投影露光することができる。また、円筒ドラム２１のマスク面Ｐ１に形成されるマスク（Ｍ、Ｍ１、Ｍ２等）の面数が種々の場合であっても、各マスク間に生じる隙間（間隔Ｓｘ）を必要以上に大きく取ることがなくなる。すなわち、マスク面Ｐ１の全面積に占める有効なマスク領域の比率（マスク利用率）の低下を抑えられる。 Further, it is preferable that the exposure apparatus U3 can replace the mask M (M1, M2). By making the mask exchangeable, various sizes of display panels or mask patterns for electronic circuit boards can be projected and exposed on the substrate P. Even if the number of masks (M, M1, M2, etc.) formed on the mask surface P1 of the cylindrical drum 21 is various, the gap (interval Sx) generated between the masks is made larger than necessary. Nothing will happen. That is, it is possible to suppress a decrease in the ratio of the effective mask region (mask utilization rate) in the entire area of the mask surface P1.
　また、マスクＭ（Ｍ１、Ｍ２）は、円筒ドラム２１のマスク面Ｐ１の直径φと、走査露光方向と直交する方向（Ｙ方向）のマスク領域の長さＬとが、共に略同じとなるように交換可能とすることが好ましい。これにより、マスクＭ（Ｍ１、Ｍ２）を交換するのみで、露光装置Ｕ３側の投影光学系ＰＬや照明光学系ＩＬ、或いは基板Ｐとマスク面Ｐ１との距離等の他の部分の調整が不要、若しくは極めて僅かな調整量で済ませることができ、マスク交換後も同等の像品質で種々のデバイスのパターンを転写することができる。 In the mask M (M1, M2), the diameter φ of the mask surface P1 of the cylindrical drum 21 and the length L of the mask region in the direction (Y direction) orthogonal to the scanning exposure direction are substantially the same. It is preferable to be replaceable. Thereby, only the mask M (M1, M2) is exchanged, and adjustment of the projection optical system PL and the illumination optical system IL on the exposure apparatus U3 side or other parts such as the distance between the substrate P and the mask surface P1 is unnecessary. Alternatively, an extremely small adjustment amount can be used, and patterns of various devices can be transferred with the same image quality even after mask replacement.
　また、上記の実施形態では、円筒ドラム２１の直径φを一定として、面取り数や配列の方向を異ならせた種々の面数のデバイス用マスク（Ｍ１、Ｍ２）をマスク面Ｐ１上に配置する場合、或いは円筒ドラム２１の直径φを異ならせて種々の面数のデバイスをマスク面Ｐ１上に配置する場合がある。しかしながら、いずれの場合も、円筒状のマスク面Ｐ１の形状を、１．３≦Ｌ／φ≦３．８の関係を満たすようにすることで、マスク面Ｐ１に複数のマスクパターンを少ない隙間で配置することができる。これにより、デバイス（表示パネル）のパターンを基板Ｐに効率よく転写させることができる。また、円筒ドラム２１による円筒マスクを、１．３≦Ｌ／φ≦３．８の関係を満たす形状とすることで、複数のデバイスパターンの隙間を少なくしつつ、種々の大きさのデバイスのパターンを効率よく配置でき、しかも円筒マスクの直径φの変化を少なくすることができる。 Further, in the above-described embodiment, when the diameter φ of the cylindrical drum 21 is constant and the device masks (M1, M2) having various numbers of chamfering numbers and different arrangement directions are arranged on the mask surface P1. Alternatively, devices having various numbers of surfaces may be arranged on the mask surface P1 with different diameters φ of the cylindrical drum 21. However, in any case, by making the shape of the cylindrical mask surface P1 satisfy the relationship of 1.3 ≦ L / φ ≦ 3.8, a plurality of mask patterns can be formed on the mask surface P1 with a small gap. Can be arranged. Thereby, the pattern of the device (display panel) can be efficiently transferred onto the substrate P. In addition, by forming the cylindrical mask by the cylindrical drum 21 into a shape satisfying the relationship of 1.3 ≦ L / φ ≦ 3.8, the device patterns of various sizes can be obtained while reducing the gap between the plurality of device patterns. Can be arranged efficiently, and the change in the diameter φ of the cylindrical mask can be reduced.
　また、図８から図１１に示すように、マスクＭ１、Ｍ２の取り付け面数は、製造する表示パネル（デバイス）のサイズに応じて、２面、３面、４面、或いはそれ以上にすることができる。マスクＭ１、Ｍ２の取り付け面数を３面、４面と増やしていくと隙間（間隔Ｓｘ）の寸法をより小さくすることができる。 Further, as shown in FIGS. 8 to 11, the number of attachment surfaces of the masks M1 and M2 is two, three, four, or more depending on the size of the display panel (device) to be manufactured. Can do. When the number of attachment surfaces of the masks M1 and M2 is increased to three and four, the size of the gap (interval Sx) can be further reduced.
　また、円筒ドラム２１は、１．３≦Ｌ／φ≦３．８を満たすことで、ロール径（直径φ）に対して、照明領域ＩＲ又は投影領域ＰＡの走査露光方向（θ方向）の幅、いわゆる露光スリット幅を最適化（大きく）することができる。以下、図１２を用いて、円筒ドラム２１のマスク面Ｐ１の直径φと、走査露光方向の露光スリット幅との関係について説明する。 Further, the cylindrical drum 21 satisfies 1.3 ≦ L / φ ≦ 3.8 so that the width of the scanning exposure direction (θ direction) of the illumination area IR or the projection area PA with respect to the roll diameter (diameter φ). The so-called exposure slit width can be optimized (increased). Hereinafter, the relationship between the diameter φ of the mask surface P1 of the cylindrical drum 21 and the exposure slit width in the scanning exposure direction will be described with reference to FIG.
　図１２は、円筒ドラム２１（マスク面Ｐ１）の直径φと露光スリット幅Ｄの関係を、デフォーカス（Defocus）量を変えてシミュレーションしたグラフである。図１２において、縦軸は露光スリット幅Ｄ［ｍｍ］を表し、これは基板Ｐ上に形成される投影領域ＰＡ（図３）のθ方向（Ｘ方向）の幅を表す。縦軸は円筒ドラム２１（マスク面Ｐ１）の直径φ［ｍｍ］を表す。また、デフォーカス量とは、露光装置Ｕ３の投影光学系ＰＬの像側（基板Ｐ側）の開口数ＮＡ、露光用の照明光の波長λ、プロセス定数ｋ（ｋ≦１）によって定義される焦点深度ＤＯＦに基づいて決められる。ここでは、投影像のベストフォーカス面と基板Ｐの表面とのフォーカス方向の偏差量（デフォーカス量）が、２５μｍと５０μｍの２通りの場合についてシミュレーションした。 FIG. 12 is a graph simulating the relationship between the diameter φ of the cylindrical drum 21 (mask surface P1) and the exposure slit width D while changing the defocus amount. In FIG. 12, the vertical axis represents the exposure slit width D [mm], which represents the width of the projection area PA (FIG. 3) formed on the substrate P in the θ direction (X direction). The vertical axis represents the diameter φ [mm] of the cylindrical drum 21 (mask surface P1). The defocus amount is defined by the numerical aperture NA on the image side (substrate P side) of the projection optical system PL of the exposure apparatus U3, the wavelength λ of illumination light for exposure, and the process constant k (k ≦ 1). It is determined based on the depth of focus DOF. Here, the simulation was performed for the case where the deviation amount (defocus amount) in the focus direction between the best focus surface of the projection image and the surface of the substrate P was 25 μm and 50 μm.
　ここで、図１２のシミュレーションでは、投影光学系ＰＬの開口数ＮＡを０．０８７５、照明光の波長λを水銀ランプのｉ線の３６５ｎｍ、プロセス定数ｋを０．５程度としたので、焦点深度ＤＯＦは、ＤＯＦ＝ｋ・λ／ＮＡ２、より、幅で約５０μｍ（約－２５μｍ～＋２５μｍ）程度得られる。尚、この条件での解像力としては、２．５μｍＬ／Ｓを得ることができる。図１２中の破線で示した２５μｍデフォーカス時とは、露光スリット幅Ｄ内で焦点深度ＤＯＦの１／２程度のフォーカス偏差が生じる状態であり、実線で示した５０μｍデフォーカス時とは、露光スリット幅Ｄ内で焦点深度ＤＯＦ程度のフォーカス偏差が生じる状態である。すなわち、破線で示した２５μｍデフォーカス時のグラフは、焦点深度ＤＯＦの幅の１／２（幅で２５μｍ）を、この円筒ドラム２１のマスク面Ｐ１の湾曲による誤差として許容した場合の直径φと露光スリット幅Ｄの関係を示し、実線で示した５０μｍデフォーカス時のグラフは、焦点深度ＤＯＦの幅程度までを、この円筒ドラム２１のマスク面Ｐ１の湾曲による誤差として許容した場合の直径φと露光スリット幅Ｄの関係を示している。 Here, in the simulation of FIG. 12, the numerical aperture NA of the projection optical system PL is 0.0875, the wavelength λ of the illumination light is 365 nm of the i-line of the mercury lamp, and the process constant k is about 0.5. DOF = k · λ / NA 2 , and a width of about 50 μm (about −25 μm to +25 μm) is obtained. In addition, as a resolving power under these conditions, 2.5 μmL / S can be obtained. In the case of defocusing at 25 μm indicated by a broken line in FIG. 12, a focus deviation of about ½ of the depth of focus DOF occurs within the exposure slit width D, and at the time of defocusing by 50 μm indicated by a solid line. This is a state in which a focus deviation of the depth of focus DOF occurs within the slit width D. That is, the graph at the time of 25 μm defocusing indicated by a broken line shows the diameter φ in the case where ½ of the width of the focal depth DOF (25 μm in width) is allowed as an error due to the curvature of the mask surface P1 of the cylindrical drum 21. The graph of the relationship between the exposure slit width D and the 50 μm defocus shown by the solid line is the diameter φ when the depth of the DOF is allowed as an error due to the curvature of the mask surface P1 of the cylindrical drum 21. The relationship of the exposure slit width D is shown.
　図１２では、円筒ドラム２１の直径φを１００ｍｍ～１０００ｍｍの範囲で変えたときに許容されるデフォーカス量（ΔＺとする）が、２５μｍになる露光スリット幅Ｄと、５０μｍになる露光スリット幅Ｄとを、以下の計算により求めた。
Ｄ＝２・〔（φ／２）２－（φ／２－ΔＺ）２〕０．５ In FIG. 12, when the diameter φ of the cylindrical drum 21 is changed in the range of 100 mm to 1000 mm, the defocus amount (assumed as ΔZ) allowed is 25 μm, and the exposure slit width D is 50 μm. Was determined by the following calculation.
D = 2 · [(φ / 2) 2 − (φ / 2−ΔZ) 2 ] 0.5
　このシミュレーションより、例えば、直径φが５００ｍｍの場合、デフォーカス量ΔＺとして２５μｍまで許容するとした場合の露光スリット幅Ｄの最大値は約７．１ｍｍとなり、デフォーカス量ΔＺとして５０μｍまで許容するとした場合の露光スリット幅Ｄの最大値は約１０．０ｍｍとなる。 From this simulation, for example, when the diameter φ is 500 mm, the maximum value of the exposure slit width D when the defocus amount ΔZ is allowed up to 25 μm is about 7.1 mm, and the defocus amount ΔZ is allowed up to 50 μm. The maximum value of the exposure slit width D is about 10.0 mm.
　図１２に示すように、円筒ドラム２１の直径φが大きくなるほど、許容されるデフォーカス量を満足する露光スリット幅Ｄは大きくなる。表示画面領域ＤＰＡのアスペクト比が２：１で、表示画面領域ＤＰＡの長手方向のみに周辺回路領域ＴＡＢが設けられる図１１のようなマスクＭ２の場合、そのマスクＭ２の１面のみを円筒ドラム２１のマスク面Ｐ１の全周に、余白部９２（間隔Ｓｘ）を作らずに形成すると、そのマスクＭ２の長手方向を、円筒ドラム２１の周方向（θ方向）にするか、第１軸ＡＸ１の方向（Ｙ方向）にするかで、比Ｌ／φは大きく変わる。マスクＭ２の長手方向を図１１のようにＹ方向にすると、マスクＭ２の１面のθ方向の長さＬｃ（短手）が、円筒ドラム２１の外周面の全周長πφと等しくなり、φ＝Ｌｃ／πとなる。このとき、円筒ドラム２１上のマスクＭ２の第１軸ＡＸ１の方向（Ｙ方向）の長さＬは、図１１の場合と同様に、Ｌ＝１．２・Ｌｄとなる。アスペクト比２：１より、Ｌｄ＝２Ｌｃであるから、この場合の比Ｌ／φは、Ｌ／φ＝２．４・π≒７．５となる。一方、マスクＭ２の短手方向をＹ方向にすると、マスクＭ２の１面のθ方向の全周長πφは１．２・Ｌｄとなり、円筒ドラム２１上のマスクＭ２のＹ方向の長さＬはＬｃとなる。従って、この場合の比Ｌ／φは、Ｌ／φ＝π／２．４≒１．３となる。 As shown in FIG. 12, as the diameter φ of the cylindrical drum 21 increases, the exposure slit width D that satisfies the allowable defocus amount increases. In the case of the mask M2 as shown in FIG. 11 in which the aspect ratio of the display screen area DPA is 2: 1 and the peripheral circuit area TAB is provided only in the longitudinal direction of the display screen area DPA, only one surface of the mask M2 is the cylindrical drum 21. If the mask portion P2 is formed on the entire circumference of the mask surface P1 without creating the blank portion 92 (interval Sx), the longitudinal direction of the mask M2 is set to the circumferential direction (θ direction) of the cylindrical drum 21 or the first axis AX1. The ratio L / φ varies greatly depending on the direction (Y direction). When the longitudinal direction of the mask M2 is set to the Y direction as shown in FIG. 11, the length Lc (short side) of one surface of the mask M2 in the θ direction becomes equal to the entire circumferential length πφ of the outer peripheral surface of the cylindrical drum 21, and φ = Lc / π. At this time, the length L of the mask M2 on the cylindrical drum 21 in the direction (Y direction) of the first axis AX1 is L = 1.2 · Ld, as in the case of FIG. Since the aspect ratio is 2: 1 and Ld = 2Lc, the ratio L / φ in this case is L / φ = 2.4 · π≈7.5. On the other hand, when the short direction of the mask M2 is the Y direction, the total circumferential length πφ in the θ direction of one surface of the mask M2 is 1.2 · Ld, and the length L in the Y direction of the mask M2 on the cylindrical drum 21 is Lc. Accordingly, the ratio L / φ in this case is L / φ = π / 2.4≈1.3.
　マスクのＹ方向の長さＬを、露光装置Ｕ３の投影光学系ＰＬの各投影領域ＰＡ１～ＰＡ６（図３）のＹ方向の合計寸法の範囲内に設定するとして、長さＬを一定とすると、比Ｌ／φが１．３から７．５に約６倍変化するということは、円筒ドラム２１の直径φが約６倍変化することを意味する。直径φの約６倍の変化は、図１２中では、例えば、直径φ＝１５０ｍｍから９００ｍｍへの変化に相当する。この場合、許容デフォーカス量ΔＺを２５μｍとした場合の露光スリット幅Ｄは、φ１５０ｍｍのときの約３．９ｍｍからφ９００ｍｍのときの約９．５ｍｍに変化する。従って、マスクのＹ方向の長さＬを一定とする場合、直径φが９００ｍｍの円筒マスクから、直径φが１５０ｍｍの円筒マスクに変わると、露光スリット幅Ｄは約４０％に減少することになる。許容デフォーカス量ΔＺを５０μｍとした場合も同様である。 If the length L in the Y direction of the mask is set within the total dimension in the Y direction of the projection areas PA1 to PA6 (FIG. 3) of the projection optical system PL of the exposure apparatus U3, the length L is constant. When the ratio L / φ changes from 1.3 to 7.5 by about 6 times, it means that the diameter φ of the cylindrical drum 21 changes by about 6 times. The change of about 6 times the diameter φ corresponds to, for example, a change from diameter φ = 150 mm to 900 mm in FIG. In this case, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm changes from about 3.9 mm when φ150 mm to about 9.5 mm when φ900 mm. Therefore, when the length L in the Y direction of the mask is constant, the exposure slit width D is reduced to about 40% when the cylindrical mask having a diameter φ of 900 mm is changed to a cylindrical mask having a diameter φ of 150 mm. . The same applies when the allowable defocus amount ΔZ is 50 μm.
　このため、比Ｌ／φが１．３から７．５の範囲を対象とすると、投影像のコントラストを一定で露光を行う場合には、単純には基板Ｐに与えられる露光量が４０％に減少してしまう。基板Ｐに与えられる露光量を適正値（１００％）にする為には、露光スリット幅Ｄとして９．５ｍｍで設定される投影領域ＰＡによる露光時の基板Ｐの移動速度に対して、約４０％の速度で基板Ｐを移動させることになる。即ち、基板Ｐの搬送速度自体を約４０％に落とすことになるので、スループット（生産性）は半分以下になってしまう。露光スリット幅Ｄとして３．９ｍｍで設定される投影領域ＰＡを使った露光時でも、基板Ｐの搬送速度を落とさない為には、投影領域ＰＡ内の投影像の輝度、即ち照明光束ＥＬ１の照度を高めることが考えられる。その場合、マスク面Ｐ１を照射する照明光束ＥＬ１の照度は、露光スリット幅Ｄが９．５ｍｍの場合の照度に対して約２．５倍にする必要がある。 Therefore, when the ratio L / φ is in the range of 1.3 to 7.5, when exposure is performed with a constant contrast of the projected image, the exposure amount given to the substrate P is simply 40%. It will decrease. In order to set the exposure amount given to the substrate P to an appropriate value (100%), it is about 40 with respect to the moving speed of the substrate P at the time of exposure by the projection area PA set as the exposure slit width D of 9.5 mm. The substrate P is moved at a speed of%. That is, since the transport speed of the substrate P itself is reduced to about 40%, the throughput (productivity) becomes half or less. Even in the exposure using the projection area PA set as the exposure slit width D of 3.9 mm, the brightness of the projection image in the projection area PA, that is, the illuminance of the illumination light beam EL1 is set so as not to decrease the transport speed of the substrate P. It is conceivable to increase. In that case, the illuminance of the illumination light beam EL1 that irradiates the mask surface P1 needs to be about 2.5 times the illuminance when the exposure slit width D is 9.5 mm.
　これに対して、図１１のようなマスクＭ２の２面取りを採用すると、比Ｌ／φを約３．８（１．２・π）以下の範囲（１．３～３．８）とすることができる。マスクのＹ方向の長さＬを一定とする場合、円筒マスク（円筒ドラム２１）の直径φの変化は約３倍の範囲となり、例えばφ＝９００ｍｍ～３００ｍｍの間で考えればよい。図１２のシミュレーションより、直径φが３００ｍｍのときに許容デフォーカス量ΔＺを２５μｍとする場合の露光スリット幅Ｄは、約５．５ｍｍとなる。従って、露光スリット幅Ｄが約９．５ｍｍの場合に対して、基板Ｐの搬送速度は約６０％程度までの減少で済む。このように、円筒ドラム２１のマスク面Ｐ１上に形成されるマスク領域の縦横の比（Ｌ：πφ）を、比Ｌ／φが約１．３～約３．８となるように制限することにより、露光スリット幅Ｄの変化を抑制することができる。 On the other hand, when the two-chamfering of the mask M2 as shown in FIG. 11 is adopted, the ratio L / φ is set within a range (1.3 to 3.8) of about 3.8 (1.2 · π) or less. Can do. When the length L in the Y direction of the mask is made constant, the change of the diameter φ of the cylindrical mask (cylindrical drum 21) is in a range of about three times. For example, it can be considered that φ = 900 mm to 300 mm. From the simulation of FIG. 12, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm when the diameter φ is 300 mm is about 5.5 mm. Accordingly, when the exposure slit width D is about 9.5 mm, the transport speed of the substrate P can be reduced to about 60%. As described above, the aspect ratio (L: πφ) of the mask region formed on the mask surface P1 of the cylindrical drum 21 is limited so that the ratio L / φ is about 1.3 to about 3.8. Thus, a change in the exposure slit width D can be suppressed.
　同様に、図１１のマスクＭ２を、図８のようにθ方向に間隔Ｓｘゼロにして３つ並べる場合は、Ｌ／φ＝０．４π・Ａｓｐとなり、円筒ドラム２１の直径φは、例えば、５００ｍｍ～９００ｍｍまで約１．８倍の範囲で変化する可能性がある。デフォーカス量２５μｍでの露光スリット幅Ｄは、直径φが９００ｍｍの場合の約９．５ｍｍから約７．１ｍｍに減少するが、これはスループットが約７５％に低減することに相当する。しかしながら、先の例のように、スループットが半分以下になる場合よりも改善される。さらに、図１１のマスクＭ２を、図９のようにθ方向に間隔Ｓｘゼロにして４つ並べる場合は、Ｌ／φ＝０．３π・Ａｓｐとなり、円筒ドラム２１の直径φは、例えば、７００ｍｍ～９００ｍｍまで約１．３倍の範囲で変化する可能性がある。デフォーカス量２５μｍでの露光スリット幅Ｄは、直径φが９００ｍｍの場合の約９．５ｍｍから約８．４ｍｍに減少する。これはスループットが約８８％に低減することに相当するが、先の例のようにスループットが半分以下になる場合よりも大幅に改善され、実質的にロスの無い露光が可能となる。また、露光スリット幅Ｄの７５％や８８％程度の減少であれば、光源３１の発光強度を高めたり、光源の数を増やしたりすることで、容易に照明光束ＥＬ１の照度を上げることができ、スループットの低下を皆無にできる。尚、マスク領域のサイズは、一定値に近づくにしたがって、スループットが一定になることがわかる。すなわち、表示画像領域ＤＰＡの画面サイズ（対角長Ｌｅ）に応じて、マスクＭの１面取り、マスクＭ１やマスクＭ２の多面取りを使い分けることで、マスク領域のサイズ（Ｌ×πφ）が一定の円筒ドラム２１（直径φが変わらない）とすることができ、スループットは一定に保たれる。 Similarly, when three masks M2 in FIG. 11 are arranged with a spacing Sx of zero in the θ direction as shown in FIG. 8, L / φ = 0.4π · Asp, and the diameter φ of the cylindrical drum 21 is, for example, There is a possibility of changing within a range of about 1.8 times from 500 mm to 900 mm. The exposure slit width D at a defocus amount of 25 μm decreases from about 9.5 mm when the diameter φ is 900 mm to about 7.1 mm, which corresponds to a reduction of throughput to about 75%. However, as in the previous example, this is an improvement over the case where the throughput is less than half. Furthermore, when four masks M2 in FIG. 11 are arranged with a spacing Sx of zero in the θ direction as shown in FIG. 9, L / φ = 0.3π · Asp, and the diameter φ of the cylindrical drum 21 is 700 mm, for example. There is a possibility of changing within a range of about 1.3 times from ˜900 mm. The exposure slit width D at a defocus amount of 25 μm decreases from about 9.5 mm when the diameter φ is 900 mm to about 8.4 mm. This corresponds to a reduction of the throughput to about 88%, but is significantly improved as compared to the case where the throughput is reduced to half or less as in the previous example, and exposure with substantially no loss is possible. If the exposure slit width D is reduced by about 75% or 88%, the illuminance of the illumination light beam EL1 can be easily increased by increasing the emission intensity of the light source 31 or increasing the number of light sources. , It can eliminate the decrease in throughput. It can be seen that the throughput becomes constant as the size of the mask region approaches a constant value. That is, the size (L × πφ) of the mask area is constant by properly using one chamfering of the mask M and multiple chamfering of the mask M1 and the mask M2 according to the screen size (diagonal length Le) of the display image area DPA. It can be a cylindrical drum 21 (the diameter φ does not change), and the throughput is kept constant.
　ところで、比Ｌ／φの範囲を約１．３～約３．８としたが、これは図１１で示したように、アスペクト比２：１の表示パネル用のマスクＭ２の長手方向の寸法が、周辺回路領域ＴＡＢの幅を含んで、表示画面領域ＤＰＡの長手方向の寸法Ｌｄに対して２０％増加する場合（１．２倍になる場合）を想定したからである。そこで、マスクの長手方向の寸法が、表示画面領域ＤＰＡの長手方向の寸法Ｌｄに対してｅ１倍に拡大したとすると、比Ｌ／φは、Ａｓｐ＝Ｌｄ／Ｌｃとして、以下の範囲で表される。
π／（ｅ１・Ａｓｐ）≦Ｌ／φ≦ｅ１・π
　この条件を満たすような円筒ドラム２１（円筒マスク）を用いることで、本実施形態の露光装置Ｕ３は、円筒面による射影誤差によって生じる投影像のディストーションや、円弧による投影像面の変化（フォーカスずれ）を抑制しつつ、表示パネル（デバイス）用のマスクパターンの複数を、隙間を少なくして基板Ｐ上に並べて転写することができる。 The range of the ratio L / φ is about 1.3 to about 3.8. As shown in FIG. 11, the longitudinal dimension of the mask M2 for a display panel having an aspect ratio of 2: 1 is as follows. This is because it is assumed that the width of the peripheral circuit area TAB is increased by 20% with respect to the longitudinal dimension Ld of the display screen area DPA (when it is 1.2 times). Therefore, if the longitudinal dimension of the mask is enlarged by e1 times the longitudinal dimension Ld of the display screen area DPA, the ratio L / φ is expressed in the following range as Asp = Ld / Lc. The
π / (e1 · Asp) ≦ L / φ ≦ e1 · π
By using the cylindrical drum 21 (cylindrical mask) that satisfies this condition, the exposure apparatus U3 of the present embodiment is capable of distorting the projected image caused by the projection error due to the cylindrical surface, or changing the projected image surface due to the arc (focus shift). ), A plurality of mask patterns for the display panel (device) can be transferred side by side on the substrate P with a small gap.
　以上、本実施形態における円筒マスク（円筒ドラム２１）上に形成されるマスクＭ、Ｍ１、Ｍ２等の配置例をまとめてみると、図１３、図１４のようになる。図１３は、先の図７と同様に、θ方向を長手方向とするマスクＭの１面取りの場合を示し、図１４は、先の図１１と同様に、Ｙ方向を長手方向とするマスクＭ２をθ方向に２つ並べる２面取りの場合を示す。図１３は、図７と同様に、表示画面領域ＤＰＡの対角長Ｌｅ（インチ）の表示パネル用のマスクＭを長辺がθ方向となる向きで配置した場合である。この場合、表示画面領域ＤＰＡの長辺寸法Ｌｄと短辺寸法Ｌｃの比（Ｌｄ／Ｌｃ）をアスペクト比Ａｓｐとし、表示画面領域ＤＰＡの周りの周辺回路領域ＴＡＢを含むマスクＭの全体を、円筒ドラム２１の外周面（マスク面Ｐ１）に余白なく形成すると、マスクＭのθ方向の長さπφは、πφ＝ｅ１・Ｌｄ＝ｅ１・Ａｓｐ・Ｌｃとなり、Ｙ方向の長さＬは、Ｌ＝ｅ２・Ｌｃとなる。先に説明した通り、ｅ１は、表示画面領域ＤＰＡの長手方向の両側又は片側に付属する周辺回路領域ＴＡＢの合計幅によって、マスクＭの長手方向が表示画面領域ＤＰＡの長手方向に対してどの程度拡大するかを表した拡大倍率である。同様に、ｅ２は、表示画面領域ＤＰＡの短手方向の両側又は片側に付属する周辺回路領域ＴＡＢの合計幅（図１３中のＴａ）によって、マスクＭの短手方向が表示画面領域ＤＰＡの短手方向に対してどの程度拡大するかを表した拡大倍率である。以上のことから、円筒ドラム２１の外周面（マスク面Ｐ１）として最低限必要な大きさは、πφ×Ｌであり、このときのマスクＭの長さＬと直径φの比Ｌ／φは、以下のように表される。
Ｌ／φ＝π・ｅ２／ｅ１・Ａｓｐ The arrangement examples of the masks M, M1, M2, etc. formed on the cylindrical mask (cylindrical drum 21) in the present embodiment are summarized as shown in FIGS. FIG. 13 shows the case of a single chamfering of the mask M with the θ direction as the longitudinal direction, as in FIG. 7, and FIG. 14 shows the mask M2 with the Y direction as the longitudinal direction, as in FIG. A case of two chamfering in which two are arranged in the θ direction is shown. FIG. 13 shows a case where a display panel mask M having a diagonal length Le (inches) of the display screen area DPA is arranged in the orientation in which the long side is in the θ direction, as in FIG. 7. In this case, the ratio of the long side dimension Ld to the short side dimension Lc (Ld / Lc) of the display screen area DPA is the aspect ratio Asp, and the entire mask M including the peripheral circuit area TAB around the display screen area DPA is cylindrical. When the drum 21 is formed with no margin on the outer peripheral surface (mask surface P1), the length πφ of the mask M in the θ direction is πφ = e1 · Ld = e1 · Asp · Lc, and the length L in the Y direction is L = e2 · Lc. As described above, e1 indicates how much the longitudinal direction of the mask M is relative to the longitudinal direction of the display screen area DPA depending on the total width of the peripheral circuit area TAB attached to both sides or one side of the display screen area DPA in the longitudinal direction. This is an enlargement magnification representing whether to enlarge. Similarly, e2 indicates that the short direction of the mask M is short of the display screen area DPA depending on the total width (Ta in FIG. 13) of the peripheral circuit area TAB attached to both sides or one side of the display screen area DPA. This is an enlargement magnification representing how much the image is enlarged with respect to the hand direction. From the above, the minimum required size as the outer peripheral surface (mask surface P1) of the cylindrical drum 21 is πφ × L, and the ratio L / φ between the length L and the diameter φ of the mask M at this time is It is expressed as follows.
L / φ = π · e2 / e1 · Asp
　マスクＭの縦横比（πφ：Ｌ）がより大きくなる場合を想定して、表示画面領域ＤＰＡの長辺に隣接した周辺回路領域ＴＡＢの幅Ｔａをゼロ（ｅ２＝１）とし、拡大倍率ｅ１を１．２（２０％増）とすると、比Ｌ／φは、π／１．２・Ａｓｐとなる。従って、アスペクト比Ａｓｐが２（２／１）の場合、比Ｌ／φは、π／２．４≒１．３となり、アスペクト比Ａｓｐが１．７７８（１６／９）の場合、比Ｌ／φは、π／２．１３４≒１．４７となる。 Assuming that the aspect ratio (πφ: L) of the mask M becomes larger, the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is set to zero (e2 = 1), and the enlargement magnification e1 is set. Assuming 1.2 (20% increase), the ratio L / φ is π / 1.2 · Asp. Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / φ is π / 2.4≈1.3, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / φ is π / 2.134≈1.47.
　図１４は、図１１と同様に、表示画面領域ＤＰＡの長辺方向をＹ方向とする２つのマスクＭ２を、θ方向に並べた２面取りの場合であり、アスペクト比Ａｓｐ、拡大倍率ｅ１、ｅ２の定義は図１３の場合と同じである。表示画面領域ＤＰＡの回りの周辺回路領域ＴＡＢを含む１つのマスクＭ２のサイズはＬ×Ｌｇとなり、このマスクＭ２の２つがθ方向に間隔Ｓｘを挟んで並置される。従って、２つのマスクＭ２と２つの間隔Ｓｘとを含むマスク全体を、円筒ドラム２１の外周面（マスク面Ｐ１）に余白なく形成する場合、マスク全体のθ方向の長さπφは、πφ＝２（Ｌｇ＋Ｓｘ）となり、Ｙ方向の長さＬは、Ｌ＝ｅ１・Ｌｄとなる。よって、このときの比Ｌ／φは、以下のように表される。
Ｌ／φ＝π・ｅ１・Ｌｄ／２（Ｌｇ＋Ｓｘ） FIG. 14 shows a case of two chamfers in which two masks M2 having the long side direction of the display screen area DPA in the Y direction are arranged in the θ direction, as in FIG. 11, and the aspect ratio Asp, the magnifications e1, e2 Is the same as in FIG. The size of one mask M2 including the peripheral circuit area TAB around the display screen area DPA is L × Lg, and the two masks M2 are juxtaposed in the θ direction with an interval Sx therebetween. Accordingly, when the entire mask including the two masks M2 and the two spaces Sx is formed without a blank on the outer peripheral surface (mask surface P1) of the cylindrical drum 21, the length πφ in the θ direction of the entire mask is πφ = 2. (Lg + Sx), and the length L in the Y direction is L = e1 · Ld. Therefore, the ratio L / φ at this time is expressed as follows.
L / φ = π · e1 · Ld / 2 (Lg + Sx)
　ここで、拡大倍率ｅ１を１．２（２０％増）、表示画面領域ＤＰＡの長辺に隣接した周辺回路領域ＴＡＢの幅Ｔａをゼロ（ｅ２＝１）とし、間隔Ｓｘもゼロと仮定すると、Ｌｇ＝ｅ２・Ｌｃ、Ｌｄ＝Ａｓｐ・Ｌｃの関係から、比Ｌ／φは、０．６π・Ａｓｐとなる。
従って、アスペクト比Ａｓｐが２（２／１）の場合、比Ｌ／φは、約３．８となり、アスペクト比Ａｓｐが１．７７８（１６／９）の場合、比Ｌ／φは、約３．４となる。 Here, assuming that the magnification e1 is 1.2 (20% increase), the width Ta of the peripheral circuit area TAB adjacent to the long side of the display screen area DPA is zero (e2 = 1), and the interval Sx is also zero. From the relationship of Lg = e2 · Lc and Ld = Asp · Lc, the ratio L / φ is 0.6π · Asp.
Therefore, when the aspect ratio Asp is 2 (2/1), the ratio L / φ is about 3.8, and when the aspect ratio Asp is 1.778 (16/9), the ratio L / φ is about 3 .4.
　このように、円筒状のマスク面Ｐ１上に配置する表示パネル（デバイス）のサイズ（インチ数）、表示画面領域ＤＰＡのアスペクト比Ａｓｐ、周辺回路領域ＴＡＢの幅等が定まれば、それに基づいて、比Ｌ／φが露光装置Ｕ３の装置仕様に適合した好適な円筒マスク（円筒ドラム２１）を簡単に作製することができる。 As described above, if the size (number of inches) of the display panel (device) arranged on the cylindrical mask surface P1, the aspect ratio Asp of the display screen area DPA, the width of the peripheral circuit area TAB, and the like are determined, based on them. A suitable cylindrical mask (cylindrical drum 21) having a ratio L / φ suitable for the apparatus specification of the exposure apparatus U3 can be easily produced.
　さらに、図１５から図１８を用いて具体例を説明する。まず、上述の図７或いは図１３に示すように、表示画面領域ＤＰＡの長辺方向をθ方向にしたマスクＭを円筒ドラム２１のマスク面Ｐ１上に１面取りする場合を比較の基準とする。ここで、具体例では、露光装置Ｕ３の投影光学系ＰＬは等倍でマスクパターンを基板Ｐ上に投影するものとする。従って、円筒ドラム２１のマスク面Ｐ１には、実際の表示パネルと実寸大のマスクパターンが形成される。また、表示パネルの表示画面領域ＤＰＡは、ハイビジョンサイズ（アスペクト比１６：９）で６０インチの画面とする。この場合、表示画面領域ＤＰＡの短辺寸法Ｌｃは７４．７ｃｍ、長辺寸法Ｌｄは１３２．８ｃｍ、対角長Ｌｅは１５２．４ｃｍとなる。また、周辺回路領域ＴＡＢも含めたマスクＭ全体の大きさは、表示画面領域ＤＰＡの長辺方向に関する拡大倍率ｅ１を１．２（２０％増）、短辺方向に関する拡大倍率ｅ２を１．１５（１５％増）として、長手方向（θ方向）にｅ１・Ｌｄ＝１５９．４ｃｍ、短手方向（Ｙ方向）にｅ２・Ｌｃ＝８５．９ｃｍとした。さらに、図６又は図７に示した余白部９２のθ方向の長さを５．０ｃｍとする。以上の条件でマスクＭを円筒ドラム２１のマスク面Ｐ１に設けることから、マスク面Ｐ１のθ方向の寸法πφは１６４．４ｃｍとなる。よって、円筒ドラム２１の直径φは、５２．３３ｃｍ以上である必要があり、例えば、５２．５ｃｍに設定される。また、以上の条件のマスクＭ全体のＹ方向の長さは、８５．９ｃｍとしたが、このマスクＭを基準とするので、露光装置Ｕ３の各投影光学系ＰＬ１～ＰＬ６の投影領域ＰＡ１～ＰＡ６をＹ方向につなげた露光領域のＹ方向の全幅は、８５．９ｃｍよりも少し大きく、８７ｃｍあるものとする。ここで、図１２に示すシミュレーション結果より、円筒ドラム２１（円筒マスクＭ）の直径φを５２．５ｃｍすると、許容されるデフォーカス量を２５μｍとした場合の露光スリット幅Ｄは７．４ｍｍとなり、許容されるデフォーカス量を５０μｍとした場合の露光スリット幅Ｄは１０.３ｍｍとなる。従って、図１３に示した基準となるマスクＭ（円筒ドラム２１）を使って基板Ｐを走査露光する際は、露光スリット幅Ｄの７．４ｍｍ以下、又は１０.３ｍｍ以下を基準として各種露光条件（基板Ｐの移動速度、照明光束ＥＬ１の照度等）が最適化されているものとする。すなわち、許容されるデフォーカス量ΔＺを２５μｍ以下にしたい場合は、露光スリット幅Ｄ（投影領域ＰＡの走査露光方向の幅）が７．４ｍｍ以下の所定値となるように、図４中の照明視野絞り５５の開口、又は投影光学系ＰＬ内の投影視野絞り６３の開口が調整される。 Further, a specific example will be described with reference to FIGS. First, as shown in FIG. 7 or FIG. 13 described above, a case where a mask M having the long side direction of the display screen area DPA in the θ direction is chamfered on the mask surface P1 of the cylindrical drum 21 is used as a reference for comparison. Here, in a specific example, it is assumed that the projection optical system PL of the exposure apparatus U3 projects the mask pattern onto the substrate P at the same magnification. Therefore, an actual display panel and an actual size mask pattern are formed on the mask surface P1 of the cylindrical drum 21. The display screen area DPA of the display panel is a high-vision size (aspect ratio 16: 9) and a 60-inch screen. In this case, the short side dimension Lc of the display screen area DPA is 74.7 cm, the long side dimension Ld is 132.8 cm, and the diagonal length Le is 152.4 cm. The overall size of the mask M including the peripheral circuit area TAB is 1.2 (20% increase) in the magnification direction e1 in the long side direction of the display screen area DPA and 1.15 in the magnification ratio e2 in the short side direction. (15% increase), e1 · Ld = 159.4 cm in the longitudinal direction (θ direction) and e2 · Lc = 85.9 cm in the short direction (Y direction). Furthermore, the length in the θ direction of the blank portion 92 shown in FIG. 6 or 7 is set to 5.0 cm. Since the mask M is provided on the mask surface P1 of the cylindrical drum 21 under the above conditions, the dimension πφ in the θ direction of the mask surface P1 is 164.4 cm. Therefore, the diameter φ of the cylindrical drum 21 needs to be 52.33 cm or more, and is set to 52.5 cm, for example. Further, the length in the Y direction of the entire mask M under the above conditions is 85.9 cm. However, since this mask M is used as a reference, the projection areas PA1 to PA6 of the projection optical systems PL1 to PL6 of the exposure apparatus U3 are used. It is assumed that the total width in the Y direction of the exposure region in which is connected in the Y direction is slightly larger than 85.9 cm and 87 cm. Here, from the simulation result shown in FIG. 12, when the diameter φ of the cylindrical drum 21 (cylindrical mask M) is 52.5 cm, the exposure slit width D when the allowable defocus amount is 25 μm is 7.4 mm. When the allowable defocus amount is 50 μm, the exposure slit width D is 10.3 mm. Therefore, when the substrate P is scanned and exposed using the reference mask M (cylindrical drum 21) shown in FIG. 13, the exposure slit width D is 7.4 mm or less, or 10.3 mm or less. (The moving speed of the substrate P, the illuminance of the illumination light beam EL1, etc.) are optimized. That is, when it is desired to set the allowable defocus amount ΔZ to 25 μm or less, the illumination slit width D (the width of the projection area PA in the scanning exposure direction) has a predetermined value of 7.4 mm or less. The opening of the field stop 55 or the opening of the projection field stop 63 in the projection optical system PL is adjusted.
　次に、図１３に示した６０インチ表示パネル用のマスクＭの為に設定した円筒ドラム２１の外周面（マスク面Ｐ１）に、アスペクト比１６：９（Ａｓｐ＝１６／９）の３２インチ表示パネル用のマスクＭ３を配置する場合を説明する。円筒ドラム２１のマスク面Ｐ１の大きさは、Ｙ方向の長さＬ＝８５．９ｃｍ、θ方向の長さπφ＝１６４．４ｃｍであるが、基準となるマスクＭと同様に、表示画面領域ＤＰＡの長手方向がθ方向となるように３２インチ表示パネル用のマスクＭ３の１つを配置（１面取り）すると、マスク面Ｐ１上のマスクＭ３の周囲に広い余白部ができてしまう。 Next, a 32-inch display with an aspect ratio of 16: 9 (Asp = 16/9) is provided on the outer peripheral surface (mask surface P1) of the cylindrical drum 21 set for the mask M for the 60-inch display panel shown in FIG. The case where the panel mask M3 is arranged will be described. The size of the mask surface P1 of the cylindrical drum 21 is a Y-direction length L = 85.9 cm and a θ-direction length πφ = 164.4 cm, but the display screen area DPA is similar to the reference mask M. If one of the masks M3 for a 32-inch display panel is arranged (one chamfering) so that the longitudinal direction is the θ direction, a wide margin is formed around the mask M3 on the mask surface P1.
　この３２インチ表示パネルの場合、表示画面領域ＤＰＡの長辺の寸法Ｌｄは７０．８ｃｍ、短辺の寸法Ｌｃは３９．９ｃｍになる。また、表示画面領域ＤＰＡの長手方向の両側又は片側に隣接する周辺回路領域ＴＡＢによる拡大倍率ｅ１を１．２（２０％増）程度とすると、マスクＭ３のθ方向の寸法は１５ｃｍ程拡大し、８５．８ｃｍとなり、さらにθ方向に５ｃｍ程度の余白部９２を設けるとすると、全長では９０．８ｃｍとなる。従って、マスクＭ３は、基準のマスクＭ用に用意した円筒ドラム２１のマスク面Ｐ１上で全周長（πφ＝１６４．４ｃｍ）の約５５％に形成されるに過ぎない。また、基準となる円筒ドラム２１のマスク面Ｐ１のＹ方向の長さＬが８５．９ｃｍであるのに対し、マスクＭ３のＹ方向の長さは、表示画面領域ＤＰＡの短手方向の拡大倍率ｅ２を１．１５（１５％増）程度とすると、４５．８ｃｍになる。従って、マスクＭ３は、基準となる円筒ドラム２１のマスク面Ｐ１上でＹ方向の寸法（Ｌ＝８５．９ｃｍ）の約５３％に形成されるに過ぎない。従って、表示画面領域ＤＰＡの長手方向がθ方向となるように３２インチ表示パネル用のマスクＭ３の１つを、基準となる円筒ドラム２１のマスク面Ｐ１に配置すると、マスクＭ３の占有面積はマスク面Ｐ１の全面積の約３０％に過ぎず、効率的ではない。 In the case of this 32-inch display panel, the long side dimension Ld of the display screen area DPA is 70.8 cm, and the short side dimension Lc is 39.9 cm. Further, when the magnification e1 by the peripheral circuit area TAB adjacent to both sides or one side in the longitudinal direction of the display screen area DPA is about 1.2 (20% increase), the dimension in the θ direction of the mask M3 is increased by about 15 cm, If the margin portion 92 of about 5 cm is provided in the θ direction, the total length is 90.8 cm. Therefore, the mask M3 is only formed to be about 55% of the total circumference (πφ = 164.4 cm) on the mask surface P1 of the cylindrical drum 21 prepared for the reference mask M. The length L in the Y direction of the mask surface P1 of the reference cylindrical drum 21 is 85.9 cm, whereas the length in the Y direction of the mask M3 is the magnification in the short direction of the display screen area DPA. If e2 is about 1.15 (15% increase), it becomes 45.8 cm. Therefore, the mask M3 is only formed in about 53% of the dimension in the Y direction (L = 85.9 cm) on the mask surface P1 of the cylindrical drum 21 serving as a reference. Therefore, when one of the 32-inch display panel masks M3 is arranged on the mask surface P1 of the reference cylindrical drum 21 so that the longitudinal direction of the display screen area DPA is the θ direction, the occupied area of the mask M3 is the mask. It is only about 30% of the total area of the surface P1, and is not efficient.
　そこで、１つのマスクＭ３を円筒ドラム２１に効率的に配置する為に、マスクＭ３のθ方向の寸法と余白部９２の寸法との合計である全長９０．８ｃｍが全周長となるように、円筒ドラム２１の直径φを変えたとすると、直径φは最低でも２８．９１ｃｍあれば良い。そこで、マスクＭ３用の円筒ドラム２１として、直径φが２９ｃｍのものを用意したとすると、図１２のシミュレーション結果より、直径φ＝２９ｃｍの場合の露光スリット幅Ｄは、許容デフォーカス量ΔＺが２５μｍのときは約５．４ｍｍ、許容デフォーカス量ΔＺが５０μｍのときは約７．６ｍｍとなる。 Therefore, in order to efficiently arrange one mask M3 on the cylindrical drum 21, the total length of 90.8 cm, which is the sum of the dimension in the θ direction of the mask M3 and the dimension of the blank portion 92, is the total circumference length. If the diameter φ of the cylindrical drum 21 is changed, the diameter φ may be at least 28.91 cm. Therefore, if a cylindrical drum 21 having a diameter φ of 29 cm is prepared as the cylindrical drum 21 for the mask M3, the allowable defocus amount ΔZ is 25 μm from the simulation result of FIG. Is about 5.4 mm, and when the allowable defocus amount ΔZ is 50 μm, it is about 7.6 mm.
　これを、基準となる円筒ドラム２１に対して設定された露光スリット幅Ｄ（７．４ｍｍ、又は１０.３ｍｍ）と比較してみる。基準となるマスク面Ｐ１（直径φ＝５２．５ｃｍの円筒ドラム２１）の場合、露光スリット幅Ｄを１０．３ｍｍ（許容デフォーカス量５０μｍ）にして、適正露光量が得られるように設定された基板Ｐの移動速度をＶ１とする。このとき、同じ条件の基板Ｐに、直径φ＝２９ｃｍの円筒ドラム２１に形成された３２インチ表示パネル用の１面取りのマスクＭ３のパターンを露光する場合、露光スリット幅Ｄが７．６ｍｍ（許容デフォーカス量５０μｍ）であるため、照度一定とした場合に、適正露光量を得る為の基板Ｐの移動速度Ｖ２は、Ｖ２＝（７．６／１０．３）Ｖ１となり、製造ラインの基板処理速度は全体的に、ほぼ２５％低下してしまう。許容デフォーカス量ΔＺが２５μｍの場合も、生産性は同程度に低下する。 Compare this with the exposure slit width D (7.4 mm or 10.3 mm) set for the standard cylindrical drum 21. In the case of the reference mask surface P1 (cylindrical drum 21 having a diameter φ = 52.5 cm), the exposure slit width D was set to 10.3 mm (allowable defocus amount 50 μm) so as to obtain an appropriate exposure amount. The moving speed of the substrate P is V1. At this time, when the pattern of the single-sided mask M3 for the 32-inch display panel formed on the cylindrical drum 21 having the diameter φ = 29 cm is exposed to the substrate P under the same conditions, the exposure slit width D is 7.6 mm (allowable). Since the defocus amount is 50 μm), when the illuminance is constant, the moving speed V2 of the substrate P for obtaining an appropriate exposure amount is V2 = (7.6 / 10.3) V1, and the substrate processing of the production line Overall, the speed is reduced by almost 25%. Even when the allowable defocus amount ΔZ is 25 μm, the productivity is reduced to the same extent.
　そこで、アスペクト比１６：９の３２インチ表示パネル用のマスクＭ３を、先の図１４に示すような配置で、２面取りした円筒マスク（円筒ドラム２１）の具体例を図１５により説明する。この図１５において、表示画面領域ＤＰＡの長辺寸法Ｌｄは７０．８ｃｍ、短辺寸法Ｌｃは３９．９ｃｍとなる。また、周辺回路領域ＴＡＢによるマスクＭ３の長手方向（Ｙ方向）の拡大倍率ｅ１は１．２程度、短手方向（θ方向）の拡大倍率ｅ２は１．１５程度としたので、マスクＭ３のＹ方向の長さＬは、１５ｃｍ程度増えて８５．８ｃｍとなり、マスクＭ３のθ方向の長さＬｇは、６ｃｍ程度増えて４５．９ｃｍとなる。 Therefore, a specific example of a cylindrical mask (cylindrical drum 21) in which a mask M3 for a 32-inch display panel having an aspect ratio of 16: 9 is chamfered in the arrangement as shown in FIG. 14 will be described with reference to FIG. In FIG. 15, the long side dimension Ld of the display screen area DPA is 70.8 cm, and the short side dimension Lc is 39.9 cm. Further, since the enlargement magnification e1 in the longitudinal direction (Y direction) of the mask M3 by the peripheral circuit region TAB is about 1.2 and the enlargement magnification e2 in the short direction (θ direction) is about 1.15, the Y of the mask M3 The length L in the direction increases by about 15 cm to 85.8 cm, and the length Lg of the mask M3 in the θ direction increases by about 6 cm to 45.9 cm.
　ここで、マスクＭ３の長辺に隣接する間隔Ｓｘ（余白部９２）のθ方向の寸法を１０ｃｍとすると、２つのマスクＭ３と２つの間隔Ｓｘとを含むマスク領域全体のθ方向の長さは、２（Ｌｇ＋Ｓｘ）より、１１０．８ｃｍとなる。従って、この場合の円筒ドラム２１の直径φは、３５．３ｃｍ程度であれば良いことになる。また、円筒ドラム２１上のマスク面Ｐ１のＹ方向の長さＬは最低８５．８ｃｍとなる。この長さＬ（８５．８ｃｍ）は、基準となる円筒ドラム２１で設定した露光領域のＹ方向の全幅（投影領域ＰＡ１～ＰＡ６のＹ方向の合計長）８７ｃｍの範囲内に丁度収まる。よって、図１５に示したマスクＭ３の２面取り用の円筒マスク（φ＝３５．３ｃｍ、Ｌ＝８５．８ｃｍの円筒ドラム２１）は、基準となる円筒マスク（φ＝５２．５ｃｍ、Ｌ＝８５．９ｃｍの円筒ドラム２１）と同様に、露光装置Ｕ３に装着してマスクＭ３のパターンを基板Ｐ上に効率的に露光することができる。 Here, if the dimension in the θ direction of the interval Sx (margin portion 92) adjacent to the long side of the mask M3 is 10 cm, the length in the θ direction of the entire mask region including the two masks M3 and the two intervals Sx is 2 (Lg + Sx), it is 110.8 cm. Accordingly, the diameter φ of the cylindrical drum 21 in this case may be about 35.3 cm. Further, the length L in the Y direction of the mask surface P1 on the cylindrical drum 21 is at least 85.8 cm. This length L (85.8 cm) is just within the range of 87 cm of the entire width in the Y direction of the exposure area set by the reference cylindrical drum 21 (the total length of the projection areas PA1 to PA6 in the Y direction). Therefore, the cylindrical mask for double chamfering of the mask M3 shown in FIG. 15 (the cylindrical drum 21 with φ = 35.3 cm, L = 85.8 cm) is the reference cylindrical mask (φ = 52.5 cm, L = 85). Similarly to the .9 cm cylindrical drum 21), the pattern of the mask M3 can be efficiently exposed on the substrate P by being mounted on the exposure apparatus U3.
　図１６は、図１５に示した３２インチ表示パネル用のマスクＭ３を２面取りする他の例の概略構成を示す展開図である。ここでは、図１５と同じ寸法のマスクＭ３が、表示画面領域ＤＰＡの長手方向をθ方向とするように、Ｙ方向に２つ並べて隙間なく配置されるものと仮定し、２つのマスクＭ３によるＹ方向の寸法Ｌは、９１．８ｃｍ（２×４５．９ｃｍ）となる。この長さＬ（９１．８ｃｍ）は、基準となる円筒ドラム２１で設定した露光領域のＹ方向の全幅（投影領域ＰＡ１～ＰＡ６のＹ方向の合計長）８７ｃｍの範囲内に収まらない。すなわち、図１５と同じマスクＭ３を９０°回転させた２面取りは、基準となる円筒ドラム２１のマスク面Ｐ１上には配置できないことになる。 FIG. 16 is a developed view showing a schematic configuration of another example in which two masks M3 for the 32-inch display panel shown in FIG. 15 are chamfered. Here, it is assumed that two masks M3 having the same dimensions as those in FIG. 15 are arranged in the Y direction with no gap so that the longitudinal direction of the display screen area DPA is the θ direction. The direction dimension L is 91.8 cm (2 × 45.9 cm). This length L (91.8 cm) does not fall within the range of 87 cm of the entire width in the Y direction of the exposure region set by the reference cylindrical drum 21 (the total length of the projection regions PA1 to PA6 in the Y direction). That is, the two chamfers obtained by rotating the same mask M3 as in FIG. 15 by 90 ° cannot be arranged on the mask surface P1 of the reference cylindrical drum 21.
　図１７は、図１５に示した３２インチ表示パネル用のマスクＭ３を１面取りする他の例の概略構成を示す展開図である。ここでは、図１５と同じ寸法のマスクＭ３の１つが、表示画面領域ＤＰＡの短手方向をθ方向とするように配置されるものと仮定し、θ方向の余白部９２の間隔Ｓｘを１０ｃｍとする。このような、マスクＭ３の配置は、標準となる円筒ドラム２１のマスク面Ｐ１に対する占有面積が極めて小さく、非効率である。そこで、図１７のような１面取りのマスクＭ３に適した寸法の円筒ドラム２１を想定してみると、円筒ドラム２１の全周長πφは、マスクＭ３のθ方向の寸法Ｌｇ（４５．９ｃｍ）と余白部９２（Ｓｘ）の寸法（１０ｃｍ）との合計より、πφ＝５５．９ｃｍとなる。従って、円筒ドラム２１の直径φは１７．８ｃｍ以上となるので、１８ｃｍとしてみる。尚、この場合のマスクＭ３のＹ方向の長さＬは、図１５と同様で８５．８ｃｍであるので、比Ｌ／φは約４．７７となる。 FIG. 17 is a developed view showing a schematic configuration of another example in which the mask M3 for the 32-inch display panel shown in FIG. 15 is chamfered. Here, it is assumed that one of the masks M3 having the same dimensions as in FIG. 15 is arranged so that the short direction of the display screen area DPA is the θ direction, and the interval Sx of the blank portion 92 in the θ direction is 10 cm. To do. Such an arrangement of the mask M3 is inefficient because the area occupied by the standard cylindrical drum 21 with respect to the mask surface P1 is extremely small. Therefore, assuming a cylindrical drum 21 having a size suitable for the one-sided mask M3 as shown in FIG. 17, the total circumferential length πφ of the cylindrical drum 21 is a dimension Lg (45.9 cm) in the θ direction of the mask M3. And the size (10 cm) of the blank portion 92 (Sx), πφ = 55.9 cm. Therefore, since the diameter φ of the cylindrical drum 21 is 17.8 cm or more, it is considered as 18 cm. In this case, the length L in the Y direction of the mask M3 is 85.8 cm as in FIG. 15, so the ratio L / φ is about 4.77.
　このように、標準となる円筒マスク（円筒ドラム２１）の直径φ（５２.５ｃｍ）よりも小さい直径φ（１８ｃｍ）にすると、マスク面Ｐ１上に効率的にマスクＭ３を配置できるが、スループット（生産性）は低下する。図１２のシミュレーションによると、マスク面Ｐ１の直径を１８．０ｃｍとすると、許容デフォーカス量ΔＺを２５μｍとした場合の露光スリット幅Ｄは約４．３ｍｍとなり、許容デフォーカス量ΔＺを５０μｍとした場合の露光スリット幅Ｄは約６．０ｍｍとなる。従って、基板Ｐの移動速度Ｖ２は、標準となる円筒マスク（円筒ドラム２１）を用いたときの基板Ｐの移動速度Ｖ１に対して、露光スリット幅Ｄの狭小化に応じて低減する。許容デフォーカス量ΔＺを２５μｍとする場合は、Ｖ２＝（４．３／７．４）Ｖ１となり、許容デフォーカス量ΔＺを５０μｍとする場合は、Ｖ２＝（６．０／１０．３）Ｖ１となり、いずれの場合も、標準となる円筒マスクを使った場合と比べ、スループットは約５８％に低下する。 Thus, when the diameter φ (18 cm) is smaller than the diameter φ (52.5 cm) of the standard cylindrical mask (cylindrical drum 21), the mask M3 can be efficiently arranged on the mask surface P1, but the throughput ( Productivity) decreases. According to the simulation of FIG. 12, when the diameter of the mask surface P1 is 18.0 cm, the exposure slit width D when the allowable defocus amount ΔZ is 25 μm is about 4.3 mm, and the allowable defocus amount ΔZ is 50 μm. In this case, the exposure slit width D is about 6.0 mm. Therefore, the moving speed V2 of the substrate P is reduced according to the narrowing of the exposure slit width D with respect to the moving speed V1 of the substrate P when the standard cylindrical mask (cylindrical drum 21) is used. When the allowable defocus amount ΔZ is 25 μm, V2 = (4.3 / 7.4) V1, and when the allowable defocus amount ΔZ is 50 μm, V2 = (6.0 / 10.3) V1. In either case, the throughput is reduced to about 58% compared to the case of using a standard cylindrical mask.
　次に、図１５と同じサイズのマスクＭ３を、図１５のように長手方向がＹ方向に向くように、θ方向に３つ配列する場合の具体例を、図１８により説明する。図１８のマスクＭ３の配置は、先の図８と同様の３面取りである。 Next, a specific example in which three masks M3 of the same size as FIG. 15 are arranged in the θ direction so that the longitudinal direction is in the Y direction as shown in FIG. 15 will be described with reference to FIG. The arrangement of the mask M3 in FIG. 18 is a three-chamfer pattern similar to that in FIG.
　ここで、３つのマスクＭ３の各々の長辺に隣接した余白部９２（Ｓｘ）や間隔Ｓｘのθ方向の寸法を何れも９ｃｍとすると、マスクＭ３の短辺方向の寸法Ｌｇが４５．９ｃｍであるので、マスク領域全体のθ方向の長さは、３（Ｌｇ＋Ｓｘ）より、１６４．７ｃｍとなる。この場合、マスク領域全体のθ方向の長さを円筒ドラム２１の全周長πφと一致するようにすると、円筒ドラム２１の直径φは、５２．４３ｃｍ以上となる。この値は、標準となる円筒マスクの直径φ＝５２．５ｃｍとほぼ同じである。また、マスク領域のＹ方向の寸法Ｌは８５．８ｃｍであり、露光領域（投影領域ＰＡ１～ＰＡ６）のＹ方向の合計幅８７ｃｍ以内に収まる。 Here, if the dimension in the θ direction of the blank portion 92 (Sx) adjacent to the long side of each of the three masks M3 and the interval Sx is 9 cm, the dimension Lg in the short side direction of the mask M3 is 45.9 cm. Therefore, the length of the entire mask region in the θ direction is 164.7 cm from 3 (Lg + Sx). In this case, the diameter φ of the cylindrical drum 21 is 52.43 cm or more when the length in the θ direction of the entire mask region is made to coincide with the total circumferential length πφ of the cylindrical drum 21. This value is almost the same as the diameter φ = 52.5 cm of the standard cylindrical mask. Further, the dimension L in the Y direction of the mask area is 85.8 cm, which is within the total width 87 cm of the exposure area (projection areas PA1 to PA6) in the Y direction.
　このように、アスペクト比１６：９の３２インチ表示パネル用のマスクＭ３であれば、図１８のような３面取りによって、標準となる円筒ドラム２１（φ＝５２．５ｃｍ）のマスク面Ｐ１上に、余白部９２や間隔Ｓｘの寸法を調整するだけで、効率的にマスクＭ３を配置することができる。従って、マスクＭ３を図１８のように３面取りする場合は、標準となる円筒マスクのサイズ（φ×Ｌ）をそのまま使えるので、スループットの低下は生じない。尚、この図１８の場合、比Ｌ／φは約１．６３となり、効率的な生産が可能とみなされる範囲、１．３≦Ｌ／φ≦３．８になっている。 As described above, in the case of the mask M3 for a 32-inch display panel having an aspect ratio of 16: 9, the mask surface P1 of the standard cylindrical drum 21 (φ = 52.5 cm) is formed by three-chamfering as shown in FIG. The mask M3 can be efficiently arranged only by adjusting the size of the blank portion 92 and the interval Sx. Therefore, when the mask M3 is chamfered as shown in FIG. 18, the standard cylindrical mask size (φ × L) can be used as it is, so that the throughput does not decrease. In the case of FIG. 18, the ratio L / φ is about 1.63, and 1.3 ≦ L / φ ≦ 3.8, which is considered to be an efficient production.
　図１５から図１８に示すように、露光装置Ｕ３に装着可能な基準となる円筒マスク（円筒ドラム２１）のマスク面Ｐ１の大きさを基準として、任意の大きさの表示パネルデバイスを作成する場合、円筒ドラム２１にマスクを１面取り、或いは多面取りで配置する際の比Ｌ／φを１．３～３．８の範囲にするように、方向性や面数を調整することで、生産効率を低下させずに、効率的にパターンの転写を行うことができる。 As shown in FIGS. 15 to 18, when a display panel device having an arbitrary size is created with reference to the size of the mask surface P1 of a cylindrical mask (cylindrical drum 21) that can be mounted on the exposure apparatus U3. By adjusting the directionality and the number of faces so that the ratio L / φ when the mask is arranged on the cylindrical drum 21 by one chamfering or multiple chamfering is in the range of 1.3 to 3.8, the production efficiency is improved. The pattern can be transferred efficiently without lowering.
　また、図１５から図１８は、表示画面領域ＤＰＡがアスペクト比１６：９の６０インチの１面の表示パネルデバイスを作成する為のマスク面Ｐ１の大きさを基準とした。しかしながら、これに限定されない。例えば、表示画面領域ＤＰＡを、アスペクト比１６：９のハイビジョンサイズで６５インチの画面としてもよい。この場合、図１３のように配置される表示画面領域ＤＰＡの対角長Ｌｅは１６５．１ｃｍ、Ｙ方向に延びる短辺Ｌｃは８０．９ｃｍ、θ方向に延びる長辺Ｌｄは１４３．９ｃｍとなる。また、周辺回路領域ＴＡＢも含めたマスクＭ全体の大きさは、長辺方向（θ方向）に拡大倍率ｅ１＝１．２（表示画面領域ＤＰＡの長手方向に２０％増大）、短辺方向（Ｙ方向）に拡大倍率ｅ２＝１．１５（表示画面領域ＤＰＡの短手方向に１５％増大）だけ、表示画面領域ＤＰＡのサイズよりも大きくなるものとする。従って、アスペクト比１６：９の６５インチ表示パネル用の１面取りマスクＭの場合、マスクＭの長手方向の寸法は、図１３に示したようにｅ１・Ａｓｐ・Ｌｃより、１７２．７ｃｍ、短手方向の寸法は、図１３に示したようにｅ２・Ｌｃより、９３．１ｃｍとなる。１面取りマスクＭの場合、θ方向に隣接して余白部９２が設けられるが、そのθ方向の寸法（Ｓｘ）を５ｃｍとすると、マスク面Ｐ１のθ方向の寸法は約１７８ｃｍとなり、直径φは５６．７ｃｍ以上となる。また、マスク面Ｐ１のＹ方向の長さは、９３.１ｃｍとなるので、この６５インチ用の円筒マスクを基準のマスクとして装着可能な露光装置Ｕ３には、露光領域のＹ方向の全幅（投影領域ＰＡ１～ＰＡ６のＹ方向幅の合計）が、例えば、９５．０ｃｍなるように、投影領域ＰＡのＹ方向寸法を変えた６本の投影光学系ＰＬが設けられる。或いは、Ｙ方向にもう１本の投影光学系ＰＬを追加した７本の投影光学系が設けられる。このアスペクト比１６：９の６５インチ表示パネルの１面取り用の円筒マスク（円筒ドラム２１）の比Ｌ／φは、Ｌ／φ＝１．６４（≒９３．１／５６．７）となる。また、円筒マスクの直径φが５６．７ｃｍなので、図１２のシミュレーション結果より、露光スリット幅Ｄは、許容デフォーカス量ΔＺを２５μｍとする場合は約７．５ｍｍ、許容デフォーカス量ΔＺを５０μｍとする場合は約１０．６ｍｍとなる。 15 to 18 are based on the size of the mask surface P1 for creating a 60-inch display panel device with a display screen area DPA having an aspect ratio of 16: 9. However, it is not limited to this. For example, the display screen area DPA may be a high-vision size 65-inch screen with an aspect ratio of 16: 9. In this case, the diagonal length Le of the display screen area DPA arranged as shown in FIG. 13 is 165.1 cm, the short side Lc extending in the Y direction is 80.9 cm, and the long side Ld extending in the θ direction is 143.9 cm. . Further, the size of the mask M including the peripheral circuit area TAB has an enlargement factor e1 = 1.2 (increased by 20% in the longitudinal direction of the display screen area DPA) in the long side direction (θ direction), and the short side direction ( It is assumed that the size of the display screen area DPA is larger than the size of the display screen area DPA by an enlargement factor e2 = 1.15 (15% increase in the short direction of the display screen area DPA) Accordingly, in the case of a single-sided mask M for a 65-inch display panel having an aspect ratio of 16: 9, the longitudinal dimension of the mask M is 172.7 cm shorter than e1, Asp, and Lc as shown in FIG. The dimension in the direction is 93.1 cm from e2 · Lc as shown in FIG. In the case of the single-sided mask M, a blank portion 92 is provided adjacent to the θ direction. If the dimension (Sx) in the θ direction is 5 cm, the dimension in the θ direction of the mask surface P1 is about 178 cm, and the diameter φ is It becomes 56.7 cm or more. Since the length of the mask surface P1 in the Y direction is 93.1 cm, the exposure apparatus U3 that can be mounted with the 65-inch cylindrical mask as a reference mask has a full width (projection) in the Y direction of the exposure region. Six projection optical systems PL in which the dimensions in the Y direction of the projection area PA are changed so that the total width in the Y direction of the areas PA1 to PA6 is, for example, 95.0 cm are provided. Alternatively, seven projection optical systems in which another projection optical system PL is added in the Y direction are provided. The ratio L / φ of the single-sided cylindrical mask (cylindrical drum 21) of the 65-inch display panel having an aspect ratio of 16: 9 is L / φ = 1.64 (≈93.1 / 56.7). Further, since the diameter φ of the cylindrical mask is 56.7 cm, the exposure slit width D is about 7.5 mm when the allowable defocus amount ΔZ is 25 μm and the allowable defocus amount ΔZ is 50 μm from the simulation result of FIG. When doing so, it is about 10.6 mm.
　そこで、アスペクト比１６：９の６５インチ表示パネルの１面取り用の円筒マスク（φ＝５６．７ｃｍ、Ｌ＝９３．１ｃｍ）に、３７インチ表示パネル用のマスクＭ４の３つを、図１８のような配置で多面取りする具体例を、図１９を参照して説明する。図１９において、３７インチの表示画面領域ＤＰＡの長辺Ｌｄ（Ｙ方向）は、８１．９ｃｍ、短辺Ｌｃ（θ方向）は４６．１ｃｍであり、長辺方向への拡大倍率ｅ１、短辺方向への拡大倍率ｅ２を共に１．１５（１５％増）とすると、マスクＭ４の長辺寸法Ｌ（ｅ１・Ｌｄ）は約９４．２ｃｍ、短辺寸法Ｌｇ（ｅ２・Ｌｃ）は約５３．０ｃｍとなる。 Therefore, three masks M4 for a 37-inch display panel are used as a cylindrical mask (φ = 56.7 cm, L = 93.1 cm) for a single chamfer of a 65-inch display panel having an aspect ratio of 16: 9, as shown in FIG. A specific example of multi-planar arrangement in such an arrangement will be described with reference to FIG. In FIG. 19, the long side Ld (Y direction) of the 37-inch display screen area DPA is 81.9 cm, the short side Lc (θ direction) is 46.1 cm, the magnification e1 in the long side direction, and the short side When the magnification e2 in the direction is 1.15 (15% increase), the mask M4 has a long side dimension L (e1 · Ld) of about 94.2 cm and a short side dimension Lg (e2 · Lc) of about 53. 0 cm.
　ここで、マスクＭ４とマスクＭ４との間隔Ｓｘを、６．０ｃｍ程度とすると、マスク面Ｐ１上の３つのマスクＭ４と３つの間隔Ｓｘとのθ方向の合計寸法である全周長πφは、πφ＝３Ｌｇ＋３Ｓｘより、約１７７ｃｍとなり、直径φは５６．４ｃｍ以上となる。また、マスクＭ４のＹ方向の長さＬは、９４．２ｃｍであるので、露光領域のＹ方向の全幅（９５ｃｍ）内に収まる。尚、図１９の場合、７本目の投影光学系ＰＬ（投影領域ＰＡ７）をＹ方向に追加して、露光領域のＹ方向の全幅が９５ｃｍになるようにした。以上のことから、図１９に示すような３７インチ表示パネル用のマスクを３面取りする場合は、６５インチ表示パネル用のマスクＭを１面取りする為の円筒マスク（円筒ドラム２１）と同じ形状寸法のものが使える。このように、図１９に示すマスクＭ４の場合も、基準となる円筒ドラム２１のマスク面Ｐ１の全面積に対して、３つのマスクＭ４の間の間隔Ｓｘを少なくして効率的に配置できると共に、基準となる円筒マスクと同等の直径φの円筒ドラム２１を使えることから、露光スリット幅Ｄの減少に伴うスループット低下も抑えられる。 Here, if the interval Sx between the mask M4 and the mask M4 is about 6.0 cm, the total circumferential length πφ which is the total dimension in the θ direction of the three masks M4 on the mask surface P1 and the three intervals Sx is: From πφ = 3Lg + 3Sx, it is about 177 cm, and the diameter φ is 56.4 cm or more. Further, since the length L in the Y direction of the mask M4 is 94.2 cm, it is within the full width (95 cm) of the exposure region in the Y direction. In the case of FIG. 19, a seventh projection optical system PL (projection area PA7) is added in the Y direction so that the entire width of the exposure area in the Y direction is 95 cm. From the above, in the case where three masks for a 37-inch display panel as shown in FIG. 19 are cut, the same shape and dimensions as a cylindrical mask (cylindrical drum 21) for cutting one mask for a 65-inch display panel are used. Can be used. As described above, also in the case of the mask M4 shown in FIG. 19, the space Sx between the three masks M4 can be reduced with respect to the entire area of the mask surface P1 of the reference cylindrical drum 21, and the mask M4 can be efficiently arranged. Since the cylindrical drum 21 having the same diameter φ as that of the reference cylindrical mask can be used, a decrease in throughput due to a decrease in the exposure slit width D can be suppressed.
　また、表示パネルデバイスの表示画面領域ＤＰＡの大きさを３７インチとし、その為のマスクＭ４を２面配置する場合は、上述した図１５と同様の配置とすることでも良い。この場合、２つのマスクＭ４と２つの間隔Ｓｘとのθ方向の合計寸法を円筒マスクの全周長πφとし、間隔Ｓｘを６ｃｍ程度にすると、πφ≒１１８．０ｃｍとなる。従って、マスクＭ４の２面を周方向に効率的に配置する場合の円筒マスク（円筒ドラム２１）の直径φは３７．６ｃｍ以上となる。 Further, when the size of the display screen area DPA of the display panel device is 37 inches and two masks M4 are arranged for this purpose, the arrangement may be the same as that shown in FIG. In this case, if the total dimension in the θ direction of the two masks M4 and the two intervals Sx is the total circumferential length πφ of the cylindrical mask, and the interval Sx is about 6 cm, πφ≈118.0 cm. Therefore, the diameter φ of the cylindrical mask (cylindrical drum 21) when the two surfaces of the mask M4 are efficiently arranged in the circumferential direction is 37.6 cm or more.
　この場合、比Ｌ／φは、約２．５(≒９４．２／３７．６)となる。また、直径φ＝３７．６ｃｍの円筒ドラム２１の場合、図１２のシミュレーションより、露光スリット幅Ｄは、許容デフォーカス量ΔＺが２５μｍの場合は約６ｍｍ、許容デフォーカス量ΔＺが５０μｍの場合は約８．６ｍｍとなる。基準となる直径φ＝５６．７ｃｍの円筒マスクに対して設定される基準となる露光スリット幅Ｄ（７．５ｍｍ、１０．６ｍｍ）と比較してみると、許容デフォーカス量ΔＺを２５μｍと５０μｍのいずれにした場合も、生産性（基板Ｐの移動速度）は約８０％となる。しかしながら、照明光束ＥＬ１の照度を、基準となる円筒マスクによる露光時に比べて２０％程度大きくすることができれば、実質的な生産性の低下は生じない。 In this case, the ratio L / φ is about 2.5 (≈94.2 / 37.6). Further, in the case of the cylindrical drum 21 having a diameter φ = 37.6 cm, the exposure slit width D is about 6 mm when the allowable defocus amount ΔZ is 25 μm and when the allowable defocus amount ΔZ is 50 μm from the simulation of FIG. It is about 8.6 mm. Compared with the reference exposure slit width D (7.5 mm, 10.6 mm) set for a cylindrical mask with a reference diameter φ = 56.7 cm, the allowable defocus amount ΔZ is 25 μm and 50 μm. In either case, the productivity (moving speed of the substrate P) is about 80%. However, if the illuminance of the illumination light beam EL1 can be increased by about 20% compared to the exposure with the reference cylindrical mask, no substantial reduction in productivity occurs.
　尚、本実施形態の露光装置Ｕ３は、円筒マスク（円筒ドラム２１）のマスクパターンを等倍で基板Ｐに投射したが、これに限定されない。露光装置Ｕ３は、投影光学系ＰＬの構成や、円筒マスク（円筒ドラム２１）の周速度と基板Ｐの移動速度等を調整し、マスクＭのパターンを所定の倍率で拡大して基板Ｐに投射しても、所定の倍率で縮小して基板Ｐに投射してもよい。 In addition, although the exposure apparatus U3 of this embodiment projected the mask pattern of the cylindrical mask (cylindrical drum 21) on the board | substrate P by equal magnification, it is not limited to this. The exposure apparatus U3 adjusts the configuration of the projection optical system PL, the peripheral speed of the cylindrical mask (cylindrical drum 21), the moving speed of the substrate P, etc., enlarges the pattern of the mask M at a predetermined magnification, and projects it onto the substrate P. Alternatively, the image may be projected on the substrate P after being reduced at a predetermined magnification.
　以上、本実施形態の露光装置Ｕ３に装着可能な円筒マスクにおいて、図８、９、図１４、１５、図１８、１９に示したように、長方形の表示画面領域ＤＰＡの長手方向をＹ方向として、θ方向に２つ以上のマスク領域（マスクＭ１、Ｍ２、Ｍ３、Ｍ４）を間隔Ｓｘを空けて並べる多面取りの場合、その円筒マスク（円筒ドラム２１）は以下のように構成される。 As described above, in the cylindrical mask that can be attached to the exposure apparatus U3 of the present embodiment, as shown in FIGS. 8, 9, 14, 15, 18, and 19, the longitudinal direction of the rectangular display screen area DPA is set to the Y direction. In the case of multiple chamfering in which two or more mask regions (masks M1, M2, M3, M4) are arranged at intervals Sx in the θ direction, the cylindrical mask (cylindrical drum 21) is configured as follows.
　中心線（ＡＸ１）から一定半径（Ｒｍ）の円筒面（Ｐ１）に沿ってマスクパターン（マスクＭ１～Ｍ４）が形成され、前記中心線の回りに回転可能に露光装置に装着される円筒マスクであって、前記円筒面には、長辺寸法Ｌｄ、短辺寸法Ｌｃのアスペクト比Ａｓｐ（＝Ｌｄ／Ｌｃ）の表示画面領域（ＤＰＡ）と、その周辺に隣接した周辺回路領域（ＴＡＢ）とを含む表示パネル用の長方形のマスク領域（マスクＭ１～Ｍ４）が、前記円筒面の周方向（θ方向）に間隔Ｓｘを空けて、ｎ（ｎ≧２）個並べて形成され、前記マスク領域の長手方向（Ｙ方向）の寸法Ｌを前記表示画面領域の長辺寸法Ｌｄのｅ１倍（拡大倍率ｅ１≧１）、前記マスク領域の短手方向（θ方向）の寸法を前記表示画面領域の短辺寸法Ｌｃのｅ２倍（拡大倍率ｅ２≧１）としたとき、前記円筒面の前記中心線の方向（Ｙ方向）の長さは前記寸法Ｌ（＝ｅ１・Ｌｄ）以上に設定され、前記円筒面の直径をφとした前記円筒面の全周長πφは、ｎ（ｅ２・Ｌｃ＋Ｓｘ）に設定され、さらに、寸法Ｌと直径φとの比が、１．３≦Ｌ／φ≦３．８の範囲になるように、前記直径φ、前記個数ｎ、前記間隔Ｓｘが設定される。 A mask pattern (masks M1 to M4) is formed along a cylindrical surface (P1) having a constant radius (Rm) from the center line (AX1), and is a cylindrical mask mounted on an exposure apparatus so as to be rotatable around the center line. The cylindrical surface includes a display screen area (DPA) having an aspect ratio Asp (= Ld / Lc) having a long side dimension Ld and a short side dimension Lc, and a peripheral circuit area (TAB) adjacent to the periphery thereof. A rectangular mask region (masks M1 to M4) for the display panel is formed by arranging n (n ≧ 2) pieces at intervals Sx in the circumferential direction (θ direction) of the cylindrical surface. The dimension L in the direction (Y direction) is e1 times the long side dimension Ld of the display screen area (enlargement magnification e1 ≧ 1), and the dimension in the short side direction (θ direction) of the mask area is the short side of the display screen area. E2 times the dimension Lc (enlargement magnification e2 ≧ 1) The length of the cylindrical surface in the direction of the center line (Y direction) is set to be not less than the dimension L (= e1 · Ld), and the entire circumference of the cylindrical surface with the diameter of the cylindrical surface being φ. The length πφ is set to n (e 2 · Lc + Sx), and further, the diameter φ and the number of the numbers so that the ratio of the dimension L to the diameter φ is in the range of 1.3 ≦ L / φ ≦ 3.8. n, the interval Sx is set.
［第２実施形態］
　次に、図２０を参照して、第２実施形態の露光装置Ｕ３ａについて説明する。尚、重複する記載を避けるべく、第１実施形態と異なる部分についてのみ説明し、第１実施形態と同様の構成要素については、第１実施形態と同じ符号を付して説明する。図２０は、第２実施形態の露光装置（基板処理装置）の全体構成を示す図である。第１実施形態の露光装置Ｕ３は、円筒状の基板支持ドラム２５で、投影領域を通過する基板Ｐを保持する構成であったが、第２実施形態の露光装置Ｕ３ａは、ＸＹ平面内を１次元又は２次元で移動可能な基板支持機構１２ａによって、基板Ｐを平面状に保持する構成となっている。従って、本実施形態における基板Ｐは、可撓性の樹脂（ＰＥＴやＰＥＮ等）をベースとする枚葉のシート基板だけでなく、枚葉の薄いガラス基板であっても良い。 [Second Embodiment]
Next, an exposure apparatus U3a according to the second embodiment will be described with reference to FIG. In order to avoid overlapping description, only the parts different from the first embodiment will be described, and the same components as those in the first embodiment will be described with the same reference numerals as those in the first embodiment. FIG. 20 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. The exposure apparatus U3 of the first embodiment is configured to hold the substrate P that passes through the projection region by the cylindrical substrate support drum 25. However, the exposure apparatus U3a of the second embodiment has a configuration in which 1 in the XY plane. The substrate P is held in a planar shape by the substrate support mechanism 12a that can move in two dimensions. Therefore, the substrate P in the present embodiment may be not only a single sheet substrate based on a flexible resin (PET, PEN, etc.) but also a thin glass substrate.
　第２実施形態の露光装置Ｕ３ａにおいて、基板支持機構１２ａは、平面状に基板Ｐを保持する支持面Ｐ２を備えた基板ステージ１０２と、基板ステージ１０２を中心面ＣＬと直交する面内でＸ方向に沿って走査移動させる移動装置（図示略）とを備える。 In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 having a support surface P2 that holds the substrate P in a planar shape, and the substrate stage 102 in the X direction within a plane orthogonal to the center plane CL. And a moving device (not shown) for scanning and moving along the line.
　図２０の基板Ｐの支持面Ｐ２は実質的にＸＹ面と平行な平面（中心面ＣＬと直交する平面）であるので、マスクＭから反射され、投影光学モジュールＰＬＭ（投影光学系ＰＬ１～ＰＬ６）を通過し、基板Ｐに投射される投影光束ＥＬ２の主光線は、ＸＹ面と垂直になるように設定される。 Since the support surface P2 of the substrate P in FIG. 20 is a plane substantially parallel to the XY plane (a plane orthogonal to the center plane CL), it is reflected from the mask M and is projected into the projection optical module PLM (projection optical systems PL1 to PL6). The principal ray of the projection light beam EL2 that passes through and is projected onto the substrate P is set to be perpendicular to the XY plane.
　また、第２実施形態においても、投影光学モジュールＰＬＭの投影倍率を等倍（×１）とすると、先の図２と同様に、ＸＺ面内で見たとき、マスクＭ上の奇数番の照明領域ＩＲ１(及びＩＲ３、ＩＲ５)の中心点から偶数番の照明領域ＩＲ２（及びＩＲ４、ＩＲ６）の中心点までの周長距離ＣＣＭは、支持面Ｐ２に倣った基板Ｐ上の奇数番の投影領域ＰＡ１（及びＰＡ３、ＰＡ５）の中心点から偶数番の第２投影領域ＰＡ２（及びＰＡ４、ＰＡ６）の中心点までのＸ方向（走査露光方向）の距離ＣＣＰと、実質的に等しく設定されている。 Also in the second embodiment, assuming that the projection magnification of the projection optical module PLM is equal (× 1), similarly to FIG. 2, the odd-numbered illumination on the mask M when viewed in the XZ plane. The circumferential distance CCM from the center point of the region IR1 (and IR3, IR5) to the center point of the even-numbered illumination region IR2 (and IR4, IR6) is an odd-numbered projection region on the substrate P following the support surface P2. The distance CCP in the X direction (scanning exposure direction) from the center point of PA1 (and PA3, PA5) to the center point of the even-numbered second projection area PA2 (and PA4, PA6) is set substantially equal. .
　図２０の露光装置Ｕ３ａにおいても、下位制御装置１６が、基板支持機構１２ａの移動装置（走査露光用のリニアモータや微動用のアクチュエータ等）を制御し、円筒マスクＭを保持する円筒ドラム２１の回転と精密に同期して基板ステージ１０２を駆動する。その為に、基板ステージ１０２のＸ方向やＹ方向の移動位置は、測長用のレーザ干渉計又はリニアエンコーダによって精密に計測され、円筒ドラム２１の回転位置はロータリーエンコーダによって精密に計測される。尚、基板ステージ１０２の支持面Ｐ２は、走査露光中に基板Ｐを真空吸着、静電吸着する吸着ホルダで構成しても良いし、支持面Ｐ２と基板Ｐとの間に静圧気体ベアリングを形成して基板Ｐを非接触状態又は低摩擦状態で支持するベール・ヌイ型ホルダで構成しても良い。 In the exposure apparatus U3a of FIG. 20 as well, the lower order control device 16 controls the moving device (linear motor for scanning exposure, actuator for fine movement, etc.) of the substrate support mechanism 12a, and the cylindrical drum 21 holding the cylindrical mask M is controlled. The substrate stage 102 is driven in synchronism with the rotation. Therefore, the movement position of the substrate stage 102 in the X direction and the Y direction is accurately measured by a laser interferometer for length measurement or a linear encoder, and the rotational position of the cylindrical drum 21 is precisely measured by a rotary encoder. The support surface P2 of the substrate stage 102 may be constituted by a suction holder that vacuum-sucks and electrostatically sucks the substrate P during scanning exposure, or a static pressure gas bearing is provided between the support surface P2 and the substrate P. It may be formed of a bale-nuis type holder that is formed and supports the substrate P in a non-contact state or a low friction state.
　ベール・ヌイ型ホルダの場合は、基板Ｐを可撓性の長尺のシート基板（ウェブ）とし、基板ＰにＸ方向（及びＹ方向）のテンションを与えつつ、基板ＰをＸ方向に移動させることができるので、基板ステージ１０２（ベール・ヌイ型ホルダ）は、Ｘ、Ｙ方向に移動させる必要が無く、また支持面Ｐ２も投影領域ＰＡ１～ＰＡ６を覆う範囲の面積であれば良く、基板ステージ１０２の小型化が図られる。また、ベール・ヌイ型ホルダの場合は、基板Ｐが長尺のシート基板であれば、基板Ｐを長尺方向に連続移動させながら走査露光することができるので、基板Ｐの吸着／開放等の付加的な時間を必要とする吸着ホルダの場合に比べ、よりロール・ツー・ロール方式の製造に適している。 In the case of a Bale-Nui holder, the substrate P is a flexible long sheet substrate (web), and the substrate P is moved in the X direction while applying tension in the X direction (and Y direction) to the substrate P. Therefore, the substrate stage 102 (bale / Nui holder) does not need to be moved in the X and Y directions, and the support surface P2 may be an area that covers the projection areas PA1 to PA6. The size of 102 can be reduced. Also, in the case of a bale / nuis type holder, if the substrate P is a long sheet substrate, scanning exposure can be performed while continuously moving the substrate P in the longitudinal direction. Compared to the case of the suction holder that requires additional time, it is more suitable for the production of the roll-to-roll method.
　露光装置Ｕ３ａのように、支持面Ｐ２を実質的にＸＹ面と平行な平面とし、基板Ｐを平面状に支持した場合も、マスクＭ（Ｍ１～Ｍ４）を円筒状に保持する円筒ドラム２１の形状の条件（Ｌ／φ）が、先の第１実施形態で説明した関係を満たすことで、各種のサイズの表示パネルのマスクパターンを基板Ｐ上に効率的に並べて露光することができると共に、生産性の低下を抑えることができる。 Even when the support surface P2 is a plane substantially parallel to the XY plane and the substrate P is supported in a planar shape as in the exposure apparatus U3a, the cylindrical drum 21 that holds the mask M (M1 to M4) in a cylindrical shape is also used. When the shape condition (L / φ) satisfies the relationship described in the first embodiment, the mask patterns of the display panels of various sizes can be efficiently arranged and exposed on the substrate P. A reduction in productivity can be suppressed.
［第３実施形態］
　次に、図２１を参照して、第３実施形態の露光装置Ｕ３ｂについて説明する。尚、重複する記載を避けるべく、第１、第２実施形態と異なる部分についてのみ説明し、第１、第２実施形態と同様の構成要素については、第１、第２実施形態と同じ符号を付して説明する。図２１は、第３実施形態の露光装置（基板処理装置）の全体構成を示す図である。第２実施形態の露光装置Ｕ３ａは、マスクで反射した光が投影光束ＥＬ２となる反射型マスクを用いる構成であったが、第３実施形態の露光装置Ｕ３ｂは、マスクを透過した光が投影光束ＥＬ２となる透過型マスクを用いる構成となっている。 [Third Embodiment]
Next, an exposure apparatus U3b according to the third embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only the parts different from the first and second embodiments will be described, and the same reference numerals as those in the first and second embodiments will be used for the same components as those in the first and second embodiments. A description will be given. FIG. 21 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3a of the second embodiment is configured to use a reflective mask in which the light reflected by the mask becomes the projection light beam EL2, but the exposure apparatus U3b of the third embodiment uses the light transmitted through the mask as the projection light beam. It is configured to use a transmission type mask that becomes EL2.
　第３実施形態の露光装置Ｕ３ｂにおいて、マスク保持機構１１ａは、円筒状にマスクＭＡを保持する円筒ドラム（マスク保持ドラム）２１ａと、マスク保持ドラム２１ａを支持するガイドローラ９３と、マスク保持ドラム２１ａを駆動する駆動ローラ９８と、駆動部９９と、を備える。 In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a includes a cylindrical drum (mask holding drum) 21a that holds the mask MA in a cylindrical shape, a guide roller 93 that supports the mask holding drum 21a, and a mask holding drum 21a. Drive roller 98 and drive unit 99.
　マスク保持ドラム２１ａは、マスクＭＡ上の照明領域ＩＲが配置されるマスク面（Ｐ１）を形成する。本実施形態において、マスク面は、Ｙ方向に延びる中心線ＡＸ１’から半径Ｒｍ（直径φ＝２Ｒｍ）の円筒面として設定される。円筒面は、例えば、円筒の外周面、円柱の外周面等である。マスク保持ドラム２１ａは、例えばガラスや石英等で構成され、一定の肉厚を有する円環状の透明筒として構成され、その外周面（円筒面）がマスク面を形成する。 The mask holding drum 21a forms a mask surface (P1) on which the illumination area IR on the mask MA is arranged. In the present embodiment, the mask surface is set as a cylindrical surface having a radius Rm (diameter φ = 2Rm) from a center line AX1 ′ extending in the Y direction. The cylindrical surface is, for example, an outer peripheral surface of a cylinder, an outer peripheral surface of a column, or the like. The mask holding drum 21a is made of, for example, glass or quartz and is formed as an annular transparent cylinder having a certain thickness, and its outer peripheral surface (cylindrical surface) forms a mask surface.
　マスクＭＡは、例えば平坦性のよい短冊状の極薄ガラス板（例えば厚さ１００～５００μｍ）の一方の面にクロム等の遮光層でパターンを形成した透過型の平面状シートマスクとして作成され、それをマスク保持ドラム２１ａの外周面に倣って湾曲させ、この外周面に巻き付けた（貼り付けた）状態で使用される。マスクＭＡは、パターンが形成されていないパターン非形成領域を有し、パターン非形成領域（周辺の余白部９２等に相当）においてマスク保持ドラム２１ａに取付けられている。従って、この場合、マスクＭＡはマスク保持ドラム２１ａに対して着脱可能である。平面状シートマスクをマスク保持ドラム２１ａ（円環状の透明筒）の外周面に巻き付けてマスクＭＡとする代わりに、円環状の透明筒によるマスク保持ドラム２１ａの外周面に直接クロム等の遮光層によるマスクパターンを描画形成して一体化してもよい。この場合も、マスク保持ドラム２１ａがマスクＭＡの支持部材（マスク支持部材）として機能する。 The mask MA is created as a transmission type planar sheet mask in which a pattern is formed with a light-shielding layer such as chromium on one surface of a strip-like ultrathin glass plate (for example, a thickness of 100 to 500 μm) with good flatness, It is used in a state in which it is curved along the outer peripheral surface of the mask holding drum 21a and wound (attached) around this outer peripheral surface. The mask MA has a pattern non-formation region where no pattern is formed, and is attached to the mask holding drum 21a in the pattern non-formation region (corresponding to the peripheral blank portion 92). Therefore, in this case, the mask MA can be attached to and detached from the mask holding drum 21a. Instead of wrapping a flat sheet mask around the outer peripheral surface of the mask holding drum 21a (annular transparent cylinder) to form the mask MA, the outer peripheral surface of the mask holding drum 21a made of an annular transparent cylinder is directly covered with a light shielding layer such as chromium. A mask pattern may be drawn and integrated. Also in this case, the mask holding drum 21a functions as a support member (mask support member) of the mask MA.
　ガイドローラ９３及び駆動ローラ９８は、マスク保持ドラム２１ａの中心線ＡＸ１’に対して平行なＹ軸方向に延びている。ガイドローラ９３及び駆動ローラ９８は、マスク保持ドラム２１ａのＹ方向の端部付近に外接するが、マスク保持ドラム２１ａに保持されているマスクＭＡのパターン形成領域には接触しないように、設けられている。駆動ローラ９８は、駆動部９９と接続されている。駆動ローラ９８は、駆動部９９から供給されるトルクをマスク保持ドラム２１ａに伝えることによって、マスク保持ドラム２１ａを中心軸周りに回転させる。 The guide roller 93 and the driving roller 98 extend in the Y-axis direction parallel to the center line AX1 'of the mask holding drum 21a. The guide roller 93 and the driving roller 98 are provided so as to circumscribe the end portion in the Y direction of the mask holding drum 21a, but not to contact the pattern formation region of the mask MA held on the mask holding drum 21a. Yes. The drive roller 98 is connected to the drive unit 99. The drive roller 98 transmits the torque supplied from the drive unit 99 to the mask holding drum 21a, thereby rotating the mask holding drum 21a around the central axis.
　本実施形態の光源装置１３ａは、第１実施形態と同様の光源（図示略）及び複数の照明光学系ＩＬａ（ＩＬａ１～ＩＬａ６）を備える。各照明光学系ＩＬａ１～ＩＬａ６の一部又は全部が、マスク保持ドラム２１ａ（環状の透明筒）の内側に配置され、マスク保持ドラム２１ａの外周面（マスク面Ｐ１）に保持されているマスクＭＡ上の各照明領域ＩＲ１～ＩＲ６を、内側から照明する。 The light source device 13a of the present embodiment includes a light source (not shown) similar to that of the first embodiment and a plurality of illumination optical systems ILa (ILa1 to ILa6). A part or all of each of the illumination optical systems ILa1 to ILa6 is disposed on the inner side of the mask holding drum 21a (annular transparent cylinder), and is on the mask MA held on the outer peripheral surface (mask surface P1) of the mask holding drum 21a. The illumination areas IR1 to IR6 are illuminated from the inside.
　各照明光学系ＩＬａ１～ＩＬａ６は、フライアイレンズやロッドインテグレータ等を備え、各照明領域ＩＲ１～ＩＲ６を、照明光束ＥＬ１によって均一な照度で照明する。尚、光源は、マスク保持ドラム２１ａの内側に配置されていてもよいし、マスク保持ドラム２１ａの外側に配置されていてもよい。また、光源は、露光装置Ｕ３ｂと別に設置して、光ファイバやリレーレンズ等の導光ユニットを介して導いてもよい。 Each illumination optical system ILa1 to ILa6 includes a fly-eye lens, a rod integrator, and the like, and illuminates each illumination region IR1 to IR6 with an illumination light beam EL1 with a uniform illuminance. The light source may be arranged inside the mask holding drum 21a or may be arranged outside the mask holding drum 21a. The light source may be installed separately from the exposure apparatus U3b and guided through a light guide unit such as an optical fiber or a relay lens.
　本実施形態のように、マスクとして透過型円筒マスクを用いた場合も、マスクＭＡを円筒状に保持するマスク支持ドラム２１ａの形状の条件（Ｌ／φ）が、先の第１実施形態で説明した関係を満たすことで、各種のサイズの表示パネルのマスクパターンを基板Ｐ上に効率的に並べて露光することができると共に、生産性の低下を抑えることができる。 Even when a transmission type cylindrical mask is used as a mask as in this embodiment, the condition (L / φ) of the shape of the mask support drum 21a that holds the mask MA in a cylindrical shape is described in the first embodiment. By satisfying the above relationship, mask patterns of various sizes of display panels can be efficiently arranged and exposed on the substrate P, and a decrease in productivity can be suppressed.
　以上、第１、第２、第３の各実施形態の露光装置Ｕ３、Ｕ３ａ、Ｕ３ｂは、いずれも円筒状のマスク面Ｐ１（円筒ドラム２１、マスク保持ドラム２１ａ）に形成されたマスクパターンを、投影光学モジュールＰＬＭ（ＰＬ１～ＰＬ６）を介して、基板Ｐ上に投影露光する方式であった。しかしながら、第３の実施形態のように透過型円筒マスク（ＭＡ）とする場合は、透過型円筒マスクの外周面（マスク面Ｐ１）と被露光対象である基板Ｐの表面との間が一定のギャップ（数十μｍ～数百μｍ）に保たれるように、透過型円筒マスク（ＭＡ）と基板Ｐとを近接配置し、透過型円筒マスクを回転させつつ基板Ｐを一方向に同期移動させるプロキシミティ方式の走査露光装置としても良い。 As described above, the exposure apparatuses U3, U3a, U3b of the first, second, and third embodiments all have the mask pattern formed on the cylindrical mask surface P1 (cylindrical drum 21, mask holding drum 21a), The projection exposure was performed on the substrate P through the projection optical module PLM (PL1 to PL6). However, when the transmission type cylindrical mask (MA) is used as in the third embodiment, the distance between the outer peripheral surface (mask surface P1) of the transmission type cylindrical mask and the surface of the substrate P to be exposed is constant. The transmission type cylindrical mask (MA) and the substrate P are arranged close to each other so that the gap (several tens to several hundreds of μm) is maintained, and the substrate P is synchronously moved in one direction while rotating the transmission type cylindrical mask. A proximity-type scanning exposure apparatus may be used.
　また、第１～第３の各実施形態の露光装置Ｕ３、Ｕ３ａ、Ｕ３ｂでは、装着可能な円筒マスク（円筒ドラム２１、マスク保持ドラム２１ａ）の直径φが変わり得ることに対応する為、円筒マスクの支持位置（Ｚ位置）を調整可能とする機構、或いは照明光学系ＩＬや投影光学系ＰＬ内の光学素子の状態を調整する機構等が設けられる。その場合、露光装置が装着可能な円筒マスクの直径φには、最小の直径φ１から最大の直径φ２までの範囲が存在する。従って、製造しようとする表示パネルのサイズに応じて、マスク（Ｍ、Ｍ１～Ｍ４）の１面取り、又は多面取りで円筒マスクを作成する際は、１．３≦Ｌ／φ≦３．８の関係と共に、φ１≦φ≦φ２の関係も満たすように、円筒ドラム２１やマスク保持ドラム２１ａの形状寸法を設定するのが良い。 Further, in the exposure apparatuses U3, U3a, U3b of the first to third embodiments, the cylindrical mask (cylindrical drum 21, mask holding drum 21a) can be adapted to change the diameter φ of the cylindrical mask. A mechanism that can adjust the support position (Z position) of the lens, or a mechanism that adjusts the state of the optical elements in the illumination optical system IL and the projection optical system PL is provided. In that case, the diameter φ of the cylindrical mask to which the exposure apparatus can be mounted has a range from the minimum diameter φ1 to the maximum diameter φ2. Therefore, when creating a cylindrical mask with one chamfering of the mask (M, M1 to M4) or multiple chamfering according to the size of the display panel to be manufactured, 1.3 ≦ L / φ ≦ 3.8. The shape dimensions of the cylindrical drum 21 and the mask holding drum 21a are preferably set so as to satisfy the relationship of φ1 ≦ φ ≦ φ2 along with the relationship.
＜デバイス製造方法＞
　次に、図２２を参照して、デバイス製造方法について説明する。図２２は、デバイス製造システムによるデバイス製造方法を示すフローチャートである。 <Device manufacturing method>
Next, a device manufacturing method will be described with reference to FIG. FIG. 22 is a flowchart showing a device manufacturing method by the device manufacturing system.
　図２２に示すデバイス製造方法では、まず、例えば有機ＥＬ等の自発光素子による表示パネルの機能・性能設計を行い、必要な回路パターンや配線パターンをＣＡＤ等で設計する（ステップＳ２０１）。次いで、ＣＡＤ等で設計された各種レイヤー毎のマスクパターンに基づいて、必要なレイヤー分の円筒マスクを製作する（ステップＳ２０２）。この時、円筒マスクは、直径φと長さＬ（Ｌａ）の関係が、１．３≦Ｌ／φ≦３．８を満たし、露光装置に装着可能な条件、φ１≦φ≦φ２を満たすように製作される。また、表示パネルの基材となる可撓性の基板Ｐ（樹脂フィルム、金属箔膜、プラスチック等）が巻かれた供給用ロールＦＲ１を準備しておく（ステップＳ２０３）。尚、このステップＳ２０３にて用意しておくロール状の基板Ｐは、必要に応じてその表面を改質したもの、下地層（例えばインプリント方式による微小凹凸）を事前形成したもの、光感応性の機能膜や透明膜（絶縁材料）を予めラミネートしたものでもよい。 In the device manufacturing method shown in FIG. 22, first, the function / performance design of a display panel using, for example, a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed using CAD or the like (step S201). Next, cylindrical masks for necessary layers are manufactured based on mask patterns for various layers designed by CAD or the like (step S202). At this time, the cylindrical mask is such that the relationship between the diameter φ and the length L (La) satisfies 1.3 ≦ L / φ ≦ 3.8, and satisfies the conditions for mounting on the exposure apparatus, φ1 ≦ φ ≦ φ2. To be produced. In addition, a supply roll FR1 around which a flexible substrate P (resin film, metal foil film, plastic, etc.) serving as a display panel base material is wound is prepared (step S203). Note that the roll-shaped substrate P prepared in step S203 has a surface modified as necessary, a pre-formed base layer (for example, fine unevenness by an imprint method), and light sensitivity. These functional films and transparent films (insulating materials) may be laminated in advance.
　次いで、基板Ｐ上に表示パネルデバイスを構成する電極や配線、絶縁膜、ＴＦＴ（薄膜半導体）等によって構成されるバックプレーン層を形成すると共に、そのバックプレーン層に積層されるように、有機ＥＬ等の自発光素子による発光層（表示画素部）が形成される（ステップＳ２０４）。このステップＳ２０４には、先の各実施形態で説明した露光装置Ｕ３、Ｕ３ａ、Ｕ３ｂに所定の円筒マスクを装着して、基板Ｐの表面に塗布された光感応層（フォトレジスト層、感光性シランカップリング層等）を露光して、表面にマスクパターンの像（潜像等）を形成する露光工程、露光によってマスクパターンが形成された基板Ｐを、必要に応じて現像した後、無電解メッキ法によって金属膜のパターン（配線、電極等）を形成する湿式工程、或いは、銀ナノ粒子を含有した導電性インク等によってパターンを描画する印刷工程、等の処理が含まれる。 Next, a backplane layer composed of electrodes, wiring, insulating films, TFTs (thin film semiconductors), etc. constituting the display panel device is formed on the substrate P, and the organic EL is stacked on the backplane layer. A light emitting layer (display pixel portion) is formed by a self-luminous element such as (Step S204). In this step S204, a photosensitive layer (photoresist layer, photosensitive silane) applied to the surface of the substrate P with a predetermined cylindrical mask attached to the exposure apparatuses U3, U3a, U3b described in the previous embodiments. An exposure process for exposing a coupling layer or the like to form an image of a mask pattern (latent image or the like) on the surface, and developing the substrate P on which the mask pattern is formed by exposure, if necessary, and then electroless plating Processes such as a wet process for forming a metal film pattern (wiring, electrodes, etc.) by a method, or a printing process for drawing a pattern with a conductive ink containing silver nanoparticles are included.
　次いで、ロール方式で長尺の基板Ｐ上に連続的に製造される表示パネルデバイス毎に、基板Ｐをダイシングしたり、各表示パネルデバイスの表面に、保護フィルム（対環境バリア層）やカラーフィルターシート等を貼り合せたりして、デバイスを組み立てる（ステップＳ２０５）。次いで、表示パネルデバイスが正常に機能するか、所望の性能や特性を満たしているかの検査工程が行なわれる（ステップＳ２０６）。以上のようにして、表示パネル（フレキシブル・ディスプレイ）を製造することができる。 Next, the substrate P is diced for each display panel device continuously manufactured on the long substrate P by a roll method, and a protective film (environmental barrier layer) or a color filter is formed on the surface of each display panel device. A device is assembled by pasting sheets or the like (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.
　１　デバイス製造システム
　２　基板供給装置
　４　基板回収装置
　５　上位制御装置
　１１　マスク保持機構
　１２、１２ａ　基板支持機構
　１３　光源装置
　１６　下位制御装置
　２１　円筒ドラム
　２１ａ　マスク保持ドラム
　２５　基板支持ドラム
　３１　光源
　３２　導光部材
　４１　１／４波長板
　５１　コリメータレンズ
　５２　フライアイレンズ
　５３　コンデンサーレンズ
　５４　シリンドリカルレンズ
　５５　照明視野絞り
　５６　リレーレンズ系
　６１　第１光学系
　６２　第２光学系
　６３　投影視野絞り
　６４　フォーカス補正光学部材
　６５　像シフト用光学部材
　６６　倍率補正用光学部材
　６７　ローテーション補正機構
　６８　偏光調整機構
　７０　第１偏向部材
　７１　第１レンズ群
　７２　第１凹面鏡
　８０　第２偏向部材
　８１　第２レンズ群
　８２　第２凹面鏡
　９２　余白部
　Ｐ　基板
　ＦＲ１　供給用ロール
　ＦＲ２　回収用ロール
　Ｕ１～Ｕｎ　処理装置
　Ｕ３、Ｕ３ａ、Ｕ３ｂ　露光装置（基板処理装置）
　Ｍ、Ｍ１、Ｍ２、Ｍ３　マスク
　ＡＸ１　第１軸
　ＡＸ２　第２軸
　Ｐ１　マスク面
　Ｐ２　支持面
　Ｐ７　中間像面
　ＥＬ１　照明光束
　ＥＬ２　投影光束
　Ｒｍ　曲率半径
　Ｒｐ　曲率半径
　ＣＬ　中心面
　ＰＢＳ　偏光ビームスプリッタ
　ＩＲ１～ＩＲ６　照明領域
　ＩＬ１～ＩＬ６　照明光学系
　ＩＬＭ　照明光学モジュール
　ＰＡ１～ＰＡ７　投影領域
　ＰＬＭ　投影光学モジュール DESCRIPTION OF SYMBOLS 1 Device manufacturing system 2 Substrate supply apparatus 4 Substrate collection | recovery apparatus 5 High-order control apparatus 11 Mask holding mechanism 12, 12a Substrate support mechanism 13 Light source apparatus 16 Low-order control apparatus 21 Cylindrical drum 21a Mask holding drum 25 Substrate support drum 31 Light source 32 Light guide member 41 1/4 wavelength plate 51 Collimator lens 52 Fly eye lens 53 Condenser lens 54 Cylindrical lens 55 Illumination field stop 56 Relay lens system 61 First optical system 62 Second optical system 63 Projection field stop 64 Focus correction optical member 65 For image shift Optical member 66 Magnification correcting optical member 67 Rotation correcting mechanism 68 Polarization adjusting mechanism 70 First deflecting member 71 First lens group 72 First concave mirror 80 Second deflecting member 81 Second lens group 82 Second concave mirror 92 Margin P substrate FR1 Supply Roll FR2 Collection roll U1 to Un Processing equipment U3, U3a, U3b Exposure equipment (substrate processing equipment)
M, M1, M2, M3 Mask AX1 First axis AX2 Second axis P1 Mask surface P2 Support surface P7 Intermediate image plane EL1 Illumination beam EL2 Projection beam Rm Curvature radius Rp Curvature radius CL Center plane PBS Polarization beam splitter IR1 to IR6 Illumination region IL1 to IL6 Illumination optical system ILM Illumination optical module PA1 to PA7 Projection area PLM Projection optical module

Claims (17)

  1. 　照明光の照明領域に配置されるマスクのパターンからの光束を、基板が配置される投影領域に投射する投影光学系を備えた基板処理装置であって、
    　前記照明領域において所定曲率で円筒面状に湾曲した第１面に沿うように、前記マスクのパターンを支持するマスク支持部材と、
    　前記投影領域において所定の第２面に沿うように、前記基板を支持する基板支持部材と、
    　前記マスクのパターンが所定の走査露光方向に移動するように前記マスク支持部材を回転させ、かつ、前記基板が前記走査露光方向に移動するように前記基板支持部材を移動させる駆動機構と、を備え、
    　前記マスク支持部材は、前記第１面の直径をφとし、前記走査露光方向に直交する方向の前記第１面の長さをＬとした場合、１．３≦Ｌ／φ≦３．８である基板処理装置。     A substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a mask arranged in an illumination area of illumination light onto a projection area where a substrate is arranged,
    A mask support member that supports the pattern of the mask so as to follow a first surface curved in a cylindrical surface shape with a predetermined curvature in the illumination region;
    A substrate support member for supporting the substrate so as to follow a predetermined second surface in the projection region;
    A driving mechanism that rotates the mask support member so that the pattern of the mask moves in a predetermined scanning exposure direction and moves the substrate support member so that the substrate moves in the scanning exposure direction. ,
    When the diameter of the first surface is φ and the length of the first surface in the direction orthogonal to the scanning exposure direction is L, the mask support member satisfies 1.3 ≦ L / φ ≦ 3.8. A substrate processing apparatus.
  2. 　前記基板支持部材に向けて前記基板を供給する基板供給部と、前記基板支持部材を通過した前記基板を回収する基板回収部と、を有する基板搬送機構を備え、
    　前記基板は、前記基板供給部から前記基板回収部まで繋がっているシート形状である請求項１に記載の基板処理装置。     A substrate transport mechanism having a substrate supply unit that supplies the substrate toward the substrate support member, and a substrate recovery unit that recovers the substrate that has passed through the substrate support member;
    The substrate processing apparatus according to claim 1, wherein the substrate has a sheet shape connected from the substrate supply unit to the substrate recovery unit.
  3. 　前記マスク支持部材は、前記直径φの第１面を外周面とする円筒形状の基材を備え、前記マスクのパターンを前記基材の外周面に形成した請求項１又は２に記載の基板処理装置。 The substrate processing according to claim 1, wherein the mask support member includes a cylindrical base material having a first surface of the diameter φ as an outer peripheral surface, and the mask pattern is formed on the outer peripheral surface of the base material. apparatus.
  4. 　前記第１面の直径φと、前記走査露光方向に直交する方向の前記第１面の長さＬとの関係がＬ／φ≦２．６を満たす請求項１から３のいずれか一項に記載の基板処理装置。 The relationship between the diameter φ of the first surface and the length L of the first surface in a direction orthogonal to the scanning exposure direction satisfies L / φ ≦ 2.6. 5. The substrate processing apparatus as described.
  5. 　前記マスク支持部材は、支持するマスクを交換可能であり、前記直径φと、前記長さＬとの関係Ｌ／φが異なる複数のマスクを支持することができる請求項４に記載の基板処理装置。 The substrate processing apparatus according to claim 4, wherein the mask support member is capable of exchanging a mask to be supported, and can support a plurality of masks having different relationships L / φ between the diameter φ and the length L. .
  6. 　前記マスク支持部材は、支持するマスクを交換可能であり、前記直径φと、前記長さＬとの関係Ｌ／φが略同一の複数のマスクを支持することができる請求項４に記載の基板処理装置。 5. The substrate according to claim 4, wherein the mask support member is capable of exchanging a mask to be supported, and can support a plurality of masks having substantially the same relationship L / φ between the diameter φ and the length L. 6. Processing equipment.
  7. 　前記マスクに形成された識別情報を取得し、前記識別情報に基づいて、前記パターンの位置を検出するパターン位置検出部をさらに有する請求項１から６のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 6, further comprising a pattern position detection unit that acquires identification information formed on the mask and detects a position of the pattern based on the identification information.
  8. 　前記識別情報は、前記パターンに対応した位置の前記マスク上に形成されたアライメントマークである請求項７に記載の基板処理装置。 The substrate processing apparatus according to claim 7, wherein the identification information is an alignment mark formed on the mask at a position corresponding to the pattern.
  9. 　前記マスクは、前記マスク支持部材の回転方向に沿って、デバイスのパターンが形成されている請求項１から８のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 8, wherein the mask has a device pattern formed along a rotation direction of the mask support member.
  10. 　前記マスクは、前記マスク支持部材の回転方向に沿って、複数のデバイスのパターンが形成されている請求項１から８のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the mask has a plurality of device patterns formed along a rotation direction of the mask support member.
  11. 　前記マスクは、前記マスク支持部材の円筒形状の軸方向に沿って、複数のデバイスのパターンが形成されている請求項１から８のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 8, wherein the mask has a plurality of device patterns formed along a cylindrical axial direction of the mask support member.
  12. 　前記デバイスは、表示デバイスのパターンが含まれる請求項９又は１０に記載の基板処理装置。 The substrate processing apparatus according to claim 9, wherein the device includes a display device pattern.
  13. 　前記基板に転写すべき前記マスクの前記デバイスのパターン毎に前記基板の露光条件を調整する露光条件調整機構を備える請求項８から１２のいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 8 to 12, further comprising an exposure condition adjusting mechanism that adjusts an exposure condition of the substrate for each pattern of the device of the mask to be transferred to the substrate.
  14. 　前記マスクは、複数のデバイスの各々に対応したパターンと、該デバイスに対応した識別マークとを備え、
    　前記投影光学系は、前記識別マークを前記基板に投射する請求項８から１３のいずれか一項に記載の基板処理装置。     The mask includes a pattern corresponding to each of a plurality of devices, and an identification mark corresponding to the device,
    The substrate processing apparatus according to claim 8, wherein the projection optical system projects the identification mark onto the substrate.
  15. 　請求項１から１４のいずれか一項に記載の基板処理装置に前記基板を供給することと、
    前記基板処理装置を用いて前記基板に前記マスクのパターンを形成することと、
    　を含むデバイス製造方法。     Supplying the substrate to the substrate processing apparatus according to any one of claims 1 to 14,
    Forming a pattern of the mask on the substrate using the substrate processing apparatus;
    A device manufacturing method including:
  16. 　円筒状の外周面に沿って電子デバイス用のマスクパターンが形成され、所定の露光装置に装着されて、中心線の回りに回転可能な円筒マスクであって、
    　前記外周面の前記中心線の方向の長さがＬａ、前記外周面の直径がφとなるような円筒基材を有し、
    　該円筒基材の外周面に形成可能な前記マスクパターンの前記中心線の方向の最大の長さをＬとしたとき、Ｌ≦Ｌａの範囲で、前記直径φと前記長さＬの比率Ｌ／φが、１．３≦Ｌ／φ≦３．８の範囲に設定される円筒マスク。     A mask pattern for an electronic device is formed along a cylindrical outer peripheral surface, is mounted on a predetermined exposure apparatus, and is a cylindrical mask that can rotate around a center line,
    A length of the outer peripheral surface in the direction of the center line is La, and the cylindrical base material has a diameter of the outer peripheral surface of φ,
    When the maximum length in the direction of the center line of the mask pattern that can be formed on the outer peripheral surface of the cylindrical base material is L, a ratio L / of the diameter φ and the length L in a range of L ≦ La. A cylindrical mask in which φ is set in a range of 1.3 ≦ L / φ ≦ 3.8.
  17. 　所定の中心線から一定半径の円筒面に沿ってマスクパターンが形成され、前記中心線の回りに回転可能に露光装置に装着される円筒マスクであって、
    　前記円筒面には、長辺寸法Ｌｄ、短辺寸法Ｌｃ、アスペクト比ＡｓｐをＬｄ／Ｌｃとする表示画面領域と、その周辺に隣接して設けられる周辺回路領域とを含む表示パネル用の長方形のマスク領域が、前記円筒面の周方向に間隔Ｓｘを空けて、ｎ個（ｎ≧２）並べて形成され、
    　前記マスク領域の長手方向の寸法Ｌを前記表示画面領域の長辺寸法Ｌｄのｅ１倍（ｅ１≧１）、前記マスク領域の短手方向の寸法を前記表示画面領域の短辺寸法Ｌｃのｅ２倍（ｅ２≧１）としたとき、前記円筒面の前記中心線の方向に関する長さは前記寸法Ｌ以上に設定されると共に、前記円筒面の直径をφ、円周率をπとしたとき、πφ＝ｎ（ｅ２・Ｌｃ＋Ｓｘ）に設定され、さらに、
    　前記寸法Ｌと前記直径φとの比Ｌ／φが、１．３≦Ｌ／φ≦３．８の範囲になるように、前記直径φ、前記個数ｎ、前記間隔Ｓｘが設定される円筒マスク。     A cylindrical mask is formed in a mask pattern along a cylindrical surface with a constant radius from a predetermined center line, and is mounted on an exposure apparatus so as to be rotatable around the center line,
    The cylindrical surface has a rectangular shape for a display panel including a display screen area having a long side dimension Ld, a short side dimension Lc, and an aspect ratio Asp of Ld / Lc, and a peripheral circuit area provided adjacent to the periphery thereof. N (n ≧ 2) mask regions are formed side by side with an interval Sx in the circumferential direction of the cylindrical surface,
    The dimension L in the longitudinal direction of the mask area is e 1 times the long side dimension Ld of the display screen area (e 1 ≧ 1), and the dimension in the short direction of the mask area is the short side dimension Lc of the display screen area. When e 2 times (e 2 ≧ 1), the length of the cylindrical surface in the direction of the center line is set to be not less than the dimension L, the diameter of the cylindrical surface is φ, and the circumference is π. Πφ = n (e 2 · Lc + Sx), and
    Cylindrical mask in which the diameter φ, the number n, and the interval Sx are set so that the ratio L / φ of the dimension L to the diameter φ is in the range of 1.3 ≦ L / φ ≦ 3.8. .
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