TWI677071B - 電子零件搭載封裝體 - Google Patents

電子零件搭載封裝體 Download PDF

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Publication number
TWI677071B
TWI677071B TW107101654A TW107101654A TWI677071B TW I677071 B TWI677071 B TW I677071B TW 107101654 A TW107101654 A TW 107101654A TW 107101654 A TW107101654 A TW 107101654A TW I677071 B TWI677071 B TW I677071B
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TW
Taiwan
Prior art keywords
terminal
thin film
film passive
passive element
electronic component
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TW107101654A
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English (en)
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TW201843798A (zh
Inventor
吉川和弘
Kazuhiro Yoshikawa
冨川満広
Mitsuhiro Tomikawa
吉田健一
Kenichi Yoshida
Original Assignee
日商 Tdk 股份有限公司
Tdk Corporation
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Publication of TW201843798A publication Critical patent/TW201843798A/zh
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Publication of TWI677071B publication Critical patent/TWI677071B/zh

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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
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Abstract

一種電子零件搭載封裝體，其具有：半導體元件，其以作用面與配線部之主面對向之方式配置，經由第1端子對配線部電性連接；及薄膜被動元件，其沿積層方向觀察時配置於半導體元件之作用面及配線部之主面之間，對半導體元件電性連接；第1端子之一部分於俯視時相對於薄膜被動元件配置於外側，相對於薄膜被動元件配置於外側之第1端子之積層方向之長度大於積層方向之薄膜被動元件之厚度。

Description

電子零件搭載封裝體
本發明係關於一種電子零件搭載封裝體。
於搭載半導體元件之封裝體中，基於電源電壓之供給穩定化等為目的，研究將薄膜電容器等之被動元件配置於半導體元件附近之構成。例如，於專利文獻1中，顯示於搭載半導體元件之基板之內部配置被動元件之構成。又，於專利文獻2中，顯示將薄膜電容器之中介層配置於基板及半導體元件之間之構成。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2013-30528號公報
[專利文獻2]日本專利特開2012-138595號公報
然而，於專利文獻1及專利文獻2記載之構成中，配置於半導體元件附近之被動元件，有因來自其他電子零件或配線等之外部之雜訊等而無法充分發揮特性之可能性。
本發明係鑒於上述而完成者，其目的在於提供一種可抑制因來自外部之雜訊而使被動元件性能降低且可使半導體元件較好地作動之電子零件搭載封裝體。
為達成上述目的，本發明之一形態之電子零件搭載封封裝體具有：配線部；半導體元件，其以作用面與上述配線部之主面對向之方式配置，經由第1端子對上述配線部電性連接；及薄膜被動元件，其沿積層方向觀察時配置於上述半導體元件之上述作用面及上述配線部之主面之間，對上述半導體元件電性連接；上述第1端子之一部分於俯視相對於上述薄膜被動元件配置於外側，相對於上述薄膜被動元件配置於外側之上述第1端子之上述積層方向之長度大於積層方向之上述薄膜被動元件之厚度。
較薄膜被動元件之厚度更厚之第1端子藉由於俯視時相對於薄膜被動元件配置於外側，而使於外部發生之雜訊藉由設置於薄膜被動元件之外側之第1端子呈緩和之狀態到達薄膜被動元件。因此，可抑制因來自外部之雜訊而薄膜被動元件之性能降低且可使半導體元件較好地動作。
於此，可設為於俯視時相對於上述薄膜被動元件位於較上述第1端子更外側之上述配線部之主面上，進而具有於積層方向較上述第1端子更長之第2端子之態樣。
於較上述第1端子更為外側，設置較第1端子於積層方向之長度更長之第2端子，藉此可進而減小薄膜被動元件中來自外部之雜訊之影響。因此，可抑制因來自外部之雜訊而薄膜被動元件之性能降低且可使半導體元件較好地動作。
又，可設為藉由上述第1端子及上述第2端子，於俯視下包圍上述薄膜被動元件周圍之全周之態樣。
若第1端子及第2端子中任一者以包圍薄膜被動元件周圍之全周之方式配置，則不藉由設置於外部之雜訊源之配置，即可減小薄膜被動元件中 來自外部之雜訊之影響。
可設為於俯視下複數個上述第1端子及複數個上述第2端子自上述薄膜被動元件向外側之依序配置，鄰接之上述第1端子彼此之間隔小於鄰接之上述第2端子彼此之間隔之態樣。
如上述，藉由將上述第1端子及上述第2端子自薄膜被動元件向外側之依序配置，並且第1端子彼此之間隔小於第2端子彼此之間隔，而更加提高藉由第1端子及第2端子抑制來自外部雜訊之效果。
可設為具有將上述薄膜被動元件及上述配線部之間電性連接之通孔導體之態樣。
藉由具有上述構成，可確保縮短電流流經於薄膜被動元件及配線部之間之路徑。因此，可抑制於電流路徑之寄生電容之發生，可提高作為半導體元件之功能。
可設為上述第1端子之長度為上述薄膜被動元件受到之來自雜訊源之雜訊的波長之半波長以下之態樣。
薄膜被動元件受到之雜訊之波長雖對應於雜訊源而不同，但藉由將第1端子之長度設為雜訊之波長之半波長以下，提高抑制雜訊之效果。
根據本發明，提供一種可抑制因來自外部之雜訊所致之被動元件之性能降低且可使半導體元件較好地動作之電子零件搭載封裝體。
1‧‧‧電子零件搭載封裝體
2‧‧‧基板安裝構造
3‧‧‧電子零件搭載封裝體
4‧‧‧電子零件搭載封裝體
10‧‧‧配線部
10a‧‧‧主面
11‧‧‧絕緣層
12‧‧‧導體層
13‧‧‧通孔導體
15‧‧‧突起
20‧‧‧絕緣部
21‧‧‧通孔導體
21A‧‧‧導體柱
21B‧‧‧貫通孔
23‧‧‧第1端子
23A‧‧‧導體柱
23B‧‧‧貫通孔
25‧‧‧第2端子
25A‧‧‧導體柱
25B‧‧‧貫通孔
30‧‧‧薄膜被動元件
31‧‧‧上部電極
32‧‧‧下部電極
33‧‧‧介電體層
40‧‧‧半導體元件
40a‧‧‧作用面
43‧‧‧導體焊墊
61‧‧‧基板
62‧‧‧元件部
63‧‧‧絕緣部
64‧‧‧外部端子
65‧‧‧元件部
66‧‧‧突起
67‧‧‧第3端子
70‧‧‧支持板
A‧‧‧箭頭
B‧‧‧箭頭
圖1係本發明之一實施形態之電子零件搭載封裝體之概略構成圖。
圖2係說明包含電子零件搭載封裝體之安裝構造之圖。
圖3(A)、(B)係說明電子零件搭載封裝體之第1製造方法之圖。
圖4(A)、(B)係說明電子零件搭載封裝體之第1製造方法之圖。
圖5(A)、(B)係說明電子零件搭載封裝體之第2製造方法之圖。
圖6(A)、(B)係說明電子零件搭載封裝體之第2製造方法之圖。
圖7係說明電子零件搭載封裝體之第1變化例之圖。
圖8係說明電子零件搭載封裝體之第2變化例之圖。
以下，參照隨附圖式，詳細說明用以實施本發明之形態。另，於圖式之說明中對相同要素標註相同符號，省略重複之說明。
圖1係說明本發明之一實施形態之電子零件搭載封裝體之概略構成圖。圖1所示之電子零件搭載封裝體係例如使用於通訊終端等之電子機器。
如圖1所示，電子零件搭載封裝體1具有：配線部10；絕緣部20，其設置於配線部10上；薄膜被動元件30，其設置於配線部10上之絕緣部20內；及半導體元件40，其設置於配線部10上之絕緣部20內且薄膜被動元件30上。
配線部10由所謂多層配線基板構成，沿著由絕緣性材料形成之複數絕緣層11及由導電性材料形成之複數導體層12交替地積層方向(圖1之上下方向：於圖1以箭頭A顯示積層方向)積層，同時形成複數個用以使複數層導體層間電性連接之由導電性材料形成之通孔導體13。於圖1等中，對配線部10進行模式性顯示。另，配線部10之絕緣層11及導體層12亦可分別為單層。絕緣層11可使用例如樹脂(聚醯亞胺樹脂、環氧樹脂、丙烯酸樹脂、苯酚樹脂等)作為主成分。又，導體層12可較好地使用主成分為鉭(Ta)、鎳(Ni)、銅(Cu)、鎢(W)、鉑(Pt)、鈀(Pd)、銥(Ir)、釕(Ru)、銠 (Rh)、含有該等之金屬之合金、或金屬間化合物之材料，但不限定於此等。另，所謂「主成分」指該成分之所占比例為50質量%以上者。
於配線部10上設置絕緣部20。絕緣部20之材料若為絕緣材料則不特別限定，例如可使用樹脂(聚醯亞胺樹脂、環氧樹脂、丙烯酸樹脂、苯酚樹脂等)作為主成分。於絕緣部20之內部亦可混入絕緣性或高電阻之填充材料。藉此可提高絕緣部20之機械強度。另，於配線部10及薄膜被動元件30之間、配線部10及半導體元件40之間等亦設置絕緣部20。即，絕緣部20作為密封薄膜被動元件30及半導體元件40之密封材料發揮功能。
於配線部10上隔著絕緣部20設置薄膜被動元件30。薄膜被動元件30係對於配線部10之導體配線及半導體元件40連接之被動元件(被動零件)。於圖1中，對於薄膜被動元件30為沿積層方向自上起按照上部電極31、介電體層33、及下部電極32之順序積層之薄膜電容器之情形時進行說明。即，上部電極31設置於半導體元件40側，下部電極32設置於配線部10側。於圖1中顯示上部電極31經複數分割之例，但不僅上部電極31可分割，下部電極32亦可分割。又，亦可上部電極31及下部電極32均不被分割。又，薄膜被動元件30之構造可適宜變更，亦可對應於薄膜被動元件30之構造，適宜變更為用以連接配線部10及半導體元件40之配線之形狀等。
作為上部電極31及下部電極32之材料，較好使用主成分為鉭(Ta)、鎳(Ni)、銅(Cu)、鎢(W)、鉑(Pt)、鈀(Pd)、銥(Ir)、釕(Ru)、銠(Rh)、含有該等之金屬之合金、或金屬間化合物之材料，但不限定於此等。另，各電極除成為主成分之材料外，亦可包含微量之雜質等。上部電極31及下部電極32之材料之組合亦不特別限定，例如，可將Cu作為上部電極31之主 成分，將Ni作為下部電極32之主成分。另，所謂「主成分」指該成分之所占比例為50質量%以上者。
介電體層33由鈣鈦礦系之介電體材料構成。於此，作為本實施形態中之鈣鈦礦系之介電材料，包含BaTiO3(鈦酸鋇)、(Ba1-xSrx)TiO3(鈦酸鋇鍶)、(Ba1-xCax)TiO3、PbTiO3、Pb(ZrxTi1-x)O3等之具有鈣鈦礦構造之(強)介電材料，及以Pb(Mg1/3Nb2/3)O3等為代表之複合鈣鈦礦鬆弛劑型強介電材料等。於此，於上述之鈣鈦礦構造、鈣鈦礦鬆弛劑型強介電體材料中，A部位與B部位之比通常為整數比，但亦可為了提高特性而刻意地偏離整數比。另，為控制介電體層33之特性，亦可於介電體層33中適宜含有作為副成分之添加物質。
於薄膜被動元件30之下部電極32及配線部10之上表面即主面10a之間設置絕緣部20。於該絕緣部20內，設置複數個形成朝積層方向延伸之貫通孔且於孔內部導入導體之通孔導體21。通孔導體21之配置、數量及大小等係基於下部電極32之形狀及配線部10之配線等而適宜變更。
於薄膜被動元件30之上方設置半導體元件40。關於用於電子零件搭載封裝體1之半導體元件40，並未特別限定，例如，可使用LSI(大規模積體電路)、ASIC(Application Specific Integrated Circuit，特殊應用積體電路)、CPU(Central Processing Unit，中央運算處理單元)等。半導體元件40係以作用面40a為下方側而與薄膜被動元件30對向之方式安裝。半導體元件40之主面大於薄膜被動元件30。且，如圖1所示，沿積層方向觀察時，以半導體元件40重疊於薄膜被動元件30之上方之方式配置該等。換言之，於俯視時，成為半導體元件40之端部配置於薄膜被動元件30的周圍之狀態。本實施形態之俯視是指沿積層方向(箭頭A方向)觀察相對於積 層方向正交之面(包含圖1之箭頭B方向之面)之狀態。
於圖1所示之例中，顯示薄膜被動元件30及半導體元件40直接連接之例，但亦可於被動元件30及半導體元件40之間介隔絕緣部20，藉由設於絕緣部20之於積層方向延伸之導電材料(例如，焊料、Au突起、Cu核心球、等)將薄膜被動元件30及半導體元件40電性連接。又，於圖1中，針對薄膜被動元件30之下部電極32經由下方之通孔導體21與配線部10電性連接後，使薄膜被動元件30之上部電極31及半導體元件40電性連接之所謂兩面電極構造予以顯示。然而，薄膜被動元件30亦可為所謂單面電極構造。於該情形時，於薄膜被動元件30及配線部10之間不設置導體之通孔導體21。如此，可針對薄膜被動元件30之電極構造及連接薄膜被動元件30與其他零件之配線等之配置等適宜變更。
如圖1所示，於薄膜被動元件30周圍之絕緣部20設有使半導體元件40及配線部10直接連接之複數個第1端子23。第1端子23係導體導入於將半導體元件40及配線部10之間之絕緣部20向積層方向貫通之貫通孔內部者，係作為連接半導體元件40及配線部10之信號傳送用之導體配線使用之端子。第1端子23設置於俯視時與薄膜被動元件30不重疊之位置，例如於俯視相對於薄膜被動元件30成為外側之位置之絕緣部20內。因此，於設置向積層方向延伸之第1端子23之位置未配置薄膜被動元件30，絕緣部20設置於配線部10及半導體元件40之間。設置第1端子23之半導體元件40及配線部10之間之絕緣部20之厚度(積層方向之長度)大於薄膜被動元件30之厚度。因此，於積層方向觀察時之第1端子23之長度設為大於薄膜被動元件30之厚度。第1端子23之配置、數量、及大小等係基於半導體元件40之形狀及配線部10之配線等適宜變更。
若第1端子23設置於俯視時相對於薄膜被動元件30位於外側之位置，則來自外部之雜訊可藉由第1端子23而緩和，可抑制雜訊對薄膜被動元件30之影響。因此，可抑制薄膜被動元件30之性能降低，且亦可較好地保證與薄膜被動元件30一起動作之半導體元件40之性能。
另，所謂「於俯視時相對於薄膜被動元件30位於外側」係指於俯視時以薄膜被動元件30為中心配置之情形時位於較薄膜被動元件30更外側。即，所謂第1端子23配置於俯視時相對於薄膜被動元件30位於外側，係指一部分之第1端子23存在於較薄膜被動元件30之外周更為外側。於第1端子23有複數個之情形時，亦可並非第1端子23全部均設於相對於薄膜被動元件30位於外側。且，若設置於外側之第1端子23之數量較多，且以包圍薄膜被動元件30之外周全周之方式具有特定之間隔而配置，則可減小來自外部之雜訊對薄膜被動元件30之影響。即，若薄膜被動元件30之外周中，由第1端子23包圍之區間之比例增加，則可進而減小來自外部之雜訊對薄膜被動元件30之影響。
又，於半導體元件40周圍之絕緣部20，設置將絕緣部20之上表面及配線部10直接連接之複數個第2端子25。第2端子25係將導體導入至將設置於半導體元件40外側之絕緣部20於積層方向貫通之貫通孔之內部者。圖2係顯示對於本實施形態之電子零件搭載封裝體1連接外部之電子零件等之基板安裝構造者。如圖2所示，於基板安裝構造2中，電子零件60設置於電子零件搭載封裝體1之上部。於圖2中，顯示電子零件60包含基板61及基板61上之元件部62、覆蓋元件部62之絕緣部63之構成，但電子零件60之構成不特別限定。電子零件60經由第2端子25及對於第2端子25電性連接之外部端子64，與電子零件搭載封裝體1之配線部10電性連接。如 此，第2端子25係用以使電子零件搭載封裝體1內未包含之外部電子零件及配線部10之導體電性連接之端子。
與第1端子23相同，若第2端子25設置於俯視時相對於薄膜被動元件30位於外側之位置，則來自外部之雜訊亦可藉由第2端子25緩和，可抑制雜訊對薄膜被動元件30之影響。因此，可抑制薄膜被動元件30之性能降低，同時亦可較好地保證與薄膜被動元件30一起動作之半導體元件40之性能。
另，所謂第2端子25配置於俯視時相對於薄膜被動元件30位於外側，係指至少一部分之第2端子25存在於較薄膜被動元件30外周更為外側。於第2端子25複數存在之情形時，亦可並非第2端子25全部均設置於相對於薄膜被動元件30位於外側。但，若設置於外側之第2端子25之數量較多，且以包圍薄膜被動元件30之外周全周之方式具有特定之間隔配置，則可減小來自外部之雜訊對薄膜被動元件30之影響。即，若增加薄膜被動元件30之外周中由第1端子23包圍之區間之比例，則可進而減小來自外部之雜訊對薄膜被動元件30之影響。再者，如圖1等所示，可成為第2端子25設於較第1端子23更為外側之態樣。藉由採用如此之構成，可進而減小來自外部之雜訊對薄膜被動元件30之影響。
回到圖1，第2端子25設置於俯視時與半導體元件40不重疊之位置之絕緣部20內。因此，設置於積層方向延伸之第2端子25之位置的絕緣部20之厚度(積層方向之長度)大於設置第1端子23之區域之絕緣部20之厚度。因此，於積層方向觀察時之第2端子25之長度大於第1端子23之長度。因此，於積層方向觀察時之長度(厚度)滿足「第2端子25>第1端子23>薄膜被動元件30」之關係。第2端子25之配置、數量、及大小等係基於成為由 第2端子25連接之對象的外部零件之形狀及配線部10之配線等適宜變更。另，第2端子25之形狀亦可非如圖1等所示之導體柱之形狀，例如亦可由焊料球、Cu(銅)核心球等形成。
複數個第1端子23中鄰接之第1端子23彼此之間隔(間距)、及複數個第2端子25中鄰接之第2端子25彼此之間隔(間距)係對應於配線部10之配線設計等適宜設定。但，藉由使鄰接之第1端子23彼此之間隔(間距)小於鄰接之第2端子25彼此之間隔(間距)，可提高作為電子零件搭載封裝體1之特性。
於配線部10之與設置薄膜被動元件30之側之主面10a相反側之主面，對應於配線部10內之導體配線設置作為外部端子發揮功能之突起15。突起15之配置或數量等可適宜變更。
上述電子零件搭載封裝體1之各部分之尺寸不特別限定，例如，電子零件搭載封裝體1之厚度可設為例如100μm~數mm左右。又，配線部10之厚度可設為50μm~1mm左右。又，薄膜被動元件30之厚度可設為5μm~50μm左右，半導體元件40之厚度可設為數十μm~數百μm左右。
接著，對上述電子零件搭載封裝體1之製造方法進行說明。於本實施形態中，作為電子零件搭載封裝體1之製造方法說明2個方法。首先，參照圖3、4對第1個方法進行說明，其次，參照圖5、6對第2個方法進行說明。
第1個方法係對電子零件搭載封裝體1所包含之各部分，自於積層方向觀察時之上側(半導體元件40側)起形成之方法。首先，如圖3(A)所示，將半導體元件40載置於晶圓或玻璃等之支持板70上，同時將薄膜被動元件30搭載於半導體元件40之作用面40a上。於圖3(A)及以後之圖中顯示於 1片支持板70上載置1個半導體元件40之狀態，但實際上，可於1片支持板70上同時製造複數個電子零件搭載封裝體。因此，於支持板70上以特定之間隔配置複數個半導體元件40。又，於支持板70上之鄰接之半導體元件40之間之特定位置，配製成為第2端子25之導體柱25A。成為第2端子25之導體柱25A具有可自立之材料及形狀之情形時，可如此將導體柱25A配置於支持板70上。
接著，如圖3(B)所示，藉由將塑模樹脂導入半導體元件40、薄膜被動元件30及導體柱25A之周圍等而形成絕緣部20。藉此，成為半導體元件40及薄膜被動元件30埋入絕緣部20內之狀態。又，藉由將導體柱25A之周圍亦由絕緣部20覆蓋，而形成絕緣部20內之第2端子25。另，亦可視需要以將導體柱25A之上端露出等為目的而研磨表面。
接著，如圖4(A)所示，於絕緣部20中，於設置通孔導體21及第1端子23之位置分別形成貫通絕緣部20之貫通孔21B、23B。貫通孔21B、23B可藉由例如使用雷射、噴擊法、治具等之加工等而製造。貫通孔21B、23B之形狀係對應於通孔導體21及第1端子23之形狀，但於藉由雷射加工而形成貫通孔21B、23B之情形時，形成底部(半導體元件40或薄膜被動元件30側)之徑變細之所謂錐狀之貫通孔21B、23B。其後，如圖4(B)所示，藉由將導體導入貫通孔21B、23B內而形成通孔導體21及第1端子23。接著，視需要研磨絕緣部20之上表面後，形成配線部10。配線部10以眾所周知之方法製造。亦可於絕緣部20上將絕緣層11及導體層12交替地積層而製造配線部10，亦可採用將以不同步驟製造之配線部10安裝於絕緣部20上之構成。其結果如圖4(B)所示，得到配線部10安裝於絕緣部20上之構成。其後，若將突起15安裝於配線部10上，同時去除支持板70，則得 到圖1所示之電子零件搭載封裝體1。
接著，對第2個方法進行說明。第2個方法係對電子零件搭載封裝體1所包含之各部分，自於積層方向觀察之下側(配線部10側)起形成之方法。首先，如圖5(A)所示，將配線部10載置於晶圓或玻璃等之支持板70上，同時於配線部10上形成對應於第1端子23之導體柱23A。配線部10以眾所周知之方法製造。可於支持板70上交替地積層絕緣層11及導體層12而製造配線部10，但亦可採用將以不同步驟所製造之配線部10安裝於支持板70上之構成。又，於成為第1端子23之導體柱23A具有可自立之材料及形狀之情形時，可如此將導體柱23A配置於配線部10上。
接著，另外準備用以將支持板70上之配線部10及導體柱23A組合之半導體元件40及薄膜被動元件30。如圖5(B)所示，組合半導體元件40及薄膜被動元件30後，於半導體元件40之作用面40a上供安裝第1端子23之位置預先設置導體焊墊43。亦可替代導體焊墊43，而藉由焊料等附著導體。導體焊墊43亦使用於將導體柱23A及半導體元件40連接時之定位等。
接著，如圖6(A)所示，以電性連接配線部10上之導體柱23A及半導體元件40上之導體焊墊43之方式組合配線部10及半導體元件40。此時，亦另外設置將薄膜被動元件30及配線部10之間電性連接之相當於通孔導體21之導體柱21A。藉此，配線部10及半導體元件40之間，及配線部10及薄膜被動元件30之間分別藉由導體電性連接。
接著，如圖6(B)所示，藉由將塑模樹脂導入配線部10上之半導體元件40、薄膜被動元件30及導體柱21A、23A之周圍等而形成絕緣部20。藉此，成為半導體元件40及薄膜被動元件30埋入絕緣部20內之狀態。又，導體柱21A、23A之周圍亦由絕緣部20覆蓋，藉此形成絕緣部20內之通孔 導體21及第1端子23。其後，於設置第2端子25之位置形成貫通絕緣部20之貫通孔25B。貫通孔25B可藉由例如利用雷射、噴射法、治具等之加工等而製造。貫通孔25B之形狀雖對應於第2端子25之形狀，但於藉由雷射加工形成貫通孔25B之情形時，形成將底部(配線部10側)之徑變細之所謂錐狀之貫通孔25B。其後，如圖6(B)所示，藉由將導體導入貫通孔25B內而形成第2端子25。若對應需要研磨絕緣部20之上表面且去除支持板70，安裝突起15，則得到如圖1所示之電子零件搭載封裝體1。
如以上，於本實施形態之電子零件搭載封裝體1中，於積層方向具有較薄膜被動元件30之厚度更大之長度的第1端子23，配置於俯視時相對於薄膜被動元件30位於外側。該情形時，於外部發生之雜訊之影響藉由設置於薄膜被動元件30外側之第1端子23而被抑制。因此，減小了薄膜被動元件30受到之雜訊。於先前之電子零件搭載封裝體中，有若薄膜被動元件30及半導體元件40之連接部分受到來自外部之雜訊之影響，則薄膜被動元件30之性能會降低之問題。然而，若採用用以避免來自外部之雜訊影響之遮蔽構造等，則有基板大型化之問題，有無法順應近年之小型化之要求的問題。相對於此，於本實施形態之電子零件搭載封裝體1中，除薄膜被動元件30、半導體元件40之配置外，藉由使連接半導體元件40及配線部10之第1端子23之配置成為上述關係，而可抑制因來自外部之雜訊所致之薄膜被動元件30之性能降低且可使半導體元件40較好地動作。
又，如本實施形態之電子零件搭載封裝體1，於採用將薄膜被動元件30配置於配線部10上，將半導體元件40配置於其上之構成，且藉由第1端子23抑制來自外部之雜訊對於薄膜被動元件30之影響之構成之情形時，可減小關於薄膜被動元件30周圍之配線之設計限制。
另，積層方向之半導體元件40及配線部10之主面之距離，即第1端子23之長度若為薄膜被動元件30受到之來自雜訊源之雜訊波長之半波長以下，則進而提高雜訊減低效果。雜訊之波長隨雜訊源而異。於本實施形態之電子零件搭載封裝體1中，設想薄膜被動元件30受到之雜訊之波長為1mm~數mm左右。因此，若將第1端子23之長度設為上述之半波長以下，則進而提高雜訊減低效果，亦提高作為半導體元件40之功能。
又，基於雜訊抑制之觀點，若至少設置第1端子23，則可降低薄膜被動元件30受到之雜訊影響。然而，如於上述事實形態之說明，若於俯視相對於薄膜被動元件30較第1端子23更於外側，設置較第1端子23於積層方向之長度更長之第2端子25，則藉由第2端子25，可進而減小薄膜被動元件30受到之來自外部之雜訊之影響。因此，可抑制因來自外部之雜訊所致之薄膜被動元件30之性能降低且可使半導體元件40較好地動作。
設置於薄膜被動元件30外側之第1端子23及第2端子25之數量若為1個以上，則可實現抑制來自外部之雜訊。但，薄膜被動元件30之外周中，由如上述第1端子23及第2端子25包圍之區間越多越能提高抑制來自外部之雜訊之效果。因此，設置於薄膜被動元件30外側之第1端子23及第2端子25之數量越多，越能抑制雜訊。且，若第1端子23及第2端子25中任一個以包圍薄膜被動元件30周圍全周之方式配置，則不管設置於外部之雜訊源配置如何，均可減小薄膜被動元件30中來自外部雜訊之影響。
又，如於上述實施形態之說明，於俯視，除第1端子23及第2端子25按照自薄膜被動元件30向外側之該順序配置以外，於第1端子23彼此之間隔小於第2端子25彼此之間隔之情形時，進而提高利用第1端子23及第2端子25抑制來自外部雜訊之效果。即，來自外部之雜訊首先藉由外側之第2 端子25減低後，於藉由第1端子23進而減低之狀態到達薄膜被動元件30。如此，因可較好地抑制雜訊，故可抑制因來自外部之雜訊所致之薄膜被動元件30之性能降低且可使半導體元件40較好地動作。但，即便於第1端子23彼此之間隔大於第2端子25彼此之間隔之情形時，亦可藉由第1端子23及第2端子25抑制來自外部之雜訊。
另，若增大鄰接之第1端子23彼此(或第2端子25彼此)之間隔，則不能提高鄰接之複數個第1端子23之雜訊抑制相乘效果，有無法充分進行雜訊抑制之可能性。藉由充分減小鄰接之第1端子23彼此(或第2端子25彼此)之間隔(具體而言，鄰接之第1端子23彼此為100μm左右以下，鄰接之第2端子25彼此為300μm左右以下)，則可提高雜訊抑制效果。另，鄰接之第1端子23彼此(或第2端子25彼此)之間隔若為薄膜被動元件30受到之來自雜訊源之雜訊之波長之半波長以下，則可得到雜訊抑制之相乘效果。
又，於配線部10上搭載複數個薄膜被動元件30之情形時，若第1端子23(及第2端子25)以包圍複數個薄膜被動元件30全體之外周之方式配置，則得到抑制來自外部之雜訊之效果。為了抑制薄膜被動元件30受到之來自外部之雜訊，於成為雜訊源之外部零件及薄膜被動元件30之間設置用以減低雜訊之第1端子23(及第2端子25)即可。因此，即便於搭載複數個薄膜被動元件30之情形時，若於複數個薄膜被動元件30之各個與成為雜訊源之外部零件之間設置第1端子23(及第2端子25)，則可較好地抑制雜訊。另，若於複數個薄膜被動元件30中鄰接之薄膜被動元件30之間亦設置第1端子23(及第2端子25)，則可進而抑制各薄膜被動元件30中雜訊之影響。
又，於上述實施形態之電子零件搭載封裝體1中，設置使薄膜被動元件30及配線部10之間電性連接之通孔導體21。藉由具有該種構成，可確 保縮短薄膜被動元件30與配線部10之間電流流動之路徑。因此，可抑制於電流路徑之寄生電容發生，可提高作為半導體元件40之功能。又，可提高配線之設計自由度，基於路徑設計之觀點亦可實現性能提高。另，亦可代替通孔導體21，使用其他之導電材料，例如焊料、Au突起、Cu核心球等。
以上，已對本發明之實施形態進行了說明，但本發明未必係限定於上述之實施形態者，於不脫離該要旨之範圍內可有各種變更。
例如，關於薄膜被動元件30及半導體元件40之大小或形狀等可適宜變更。又，對於配線部10亦可適宜變更構造或配置等。
又，對於電子零件搭載封裝體之配線部、半導體元件及薄膜被動元件周圍之構造，亦可適宜變更。
圖7係顯示第1變化例之電子零件搭載封裝體3之圖。圖7所示之電子零件搭載封裝體3於上述實施形態中說明之電子零件搭載封裝體1中突起15設置之位置，設置連接於配線部10之元件部(例如記憶體等)。具體而言，於電子零件搭載封裝體3中，對於與半導體元件40相反側之配線部10設置元件部65。又，元件部65及配線部10經由突起66連接。藉由採用該種構造，可進而縮短半導體元件40及元件部65之間之距離，可更進一層提高半導體元件40之動作性能。
圖8係顯示第2變化例之電子零件搭載封裝體4之圖。圖8所示之電子零件搭載封裝體4以對於上述實施形態中說明之電子零件搭載封裝體1中半導體元件40相鄰之方式，設置元件部(例如記憶體等)。具體而言，於電子零件搭載封裝體4中，於絕緣部20內半導體元件40之旁邊設置元件部65。又，元件部65及配線部10之間藉由第3端子67連接。如此，即便於採用將 元件部65配置於絕緣部20內之構造之情形時，亦可進而縮短半導體元件40及元件部65之間之距離，更進一層提高半導體元件40之動作性能。
又，於圖7所示之電子零件搭載封裝體3及圖8所示之電子零件搭載封裝體4中未設置第2端子25。如此，於不需要用以使未包含於電子零件搭載封裝體1之外部電子零件與配線部10之導體電性連接之第2端子25之情形時，其亦可省略。

Claims (4)

  1. 一種電子零件搭載封裝體，其具有：配線部；半導體元件，其以作用面與上述配線部之主面對向之方式配置，經由第1端子對上述配線部電性連接；薄膜被動元件，其沿積層方向觀察時配置於上述半導體元件之上述作用面及上述配線部之主面之間，對上述半導體元件電性連接；及通孔導體，其將上述薄膜被動元件及上述配線部之間電性連接；且上述第1端子之一部分於俯視時相對於上述薄膜被動元件配置於外側；相對於上述薄膜被動元件配置於外側之上述第1端子之上述積層方向之長度，大於積層方向之上述薄膜被動元件之厚度；上述第1端子之長度為上述薄膜被動元件受到之來自雜訊源之雜訊之波長的半波長以下。
  2. 如請求項1之電子零件搭載封裝體，其中於俯視時相對於上述薄膜被動元件位於較上述第1端子更外側之上述配線部之主面上，進而具有於積層方向較上述第1端子更長之第2端子。
  3. 如請求項2之電子零件搭載封裝體，其中藉由上述第1端子及上述第2端子，於俯視下包圍上述薄膜被動元件周圍之全周。
  4. 如請求項2或3之電子零件搭載封裝體，其中於俯視下複數個上述第1端子及複數個上述第2端子自上述薄膜被動元件向外側依序配置，鄰接之上述第1端子彼此之間隔小於鄰接之上述第2端子彼此之間隔。
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