TWI675393B - 用於處理基板的背側之方法及工具 - Google Patents

用於處理基板的背側之方法及工具 Download PDF

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TWI675393B
TWI675393B TW105135819A TW105135819A TWI675393B TW I675393 B TWI675393 B TW I675393B TW 105135819 A TW105135819 A TW 105135819A TW 105135819 A TW105135819 A TW 105135819A TW I675393 B TWI675393 B TW I675393B
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substrate
film
annealing
back side
chamber
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TW105135819A
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TW201727696A (zh
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喬瑟夫Ｍ 拉尼許
亞倫穆爾 杭特
史瓦米奈森Ｔ 史林尼法森
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美商應用材料股份有限公司
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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TW105135819A 2015-11-09 2016-11-04 用於處理基板的背側之方法及工具 TWI675393B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
US201662306150P 2016-03-10 2016-03-10
US62/306,150 2016-03-10

Publications (2)

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418264B2 (en) * 2016-06-08 2019-09-17 Hermes-Epitek Corporation Assembling device used for semiconductor equipment
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10916416B2 (en) * 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
SG11202005150YA (en) 2017-12-01 2020-06-29 Applied Materials Inc Highly etch selective amorphous carbon film
JP2020047617A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 基板処理装置、半導体装置の製造方法、および被加工基板
DE102019211447B4 (de) * 2019-07-31 2023-06-01 Robert Bosch Gmbh Verfahren zum Laserrichten von Führungsschienen
JP2024519467A (ja) * 2021-04-27 2024-05-14 アプライド マテリアルズ インコーポレイテッド 半導体処理に関する応力およびオーバーレイ管理
WO2023272627A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2023272638A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2023272592A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
CN116018889A (zh) 2021-06-30 2023-04-25 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN115812345A (zh) 2021-06-30 2023-03-17 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272611A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2023272614A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
CN113906542A (zh) * 2021-08-30 2022-01-07 长江存储科技有限责任公司 使用背面膜层沉积和激光退火的晶圆应力控制
US12094726B2 (en) 2021-12-13 2024-09-17 Applied Materials, Inc. Adapting electrical, mechanical, and thermal properties of package substrates
JP2023183276A (ja) * 2022-06-15 2023-12-27 キオクシア株式会社 接合装置、接合方法、及び半導体装置の製造方法
TW202431354A (zh) * 2022-09-28 2024-08-01 美商應用材料股份有限公司 應力管理期間全域曲率的校正
CN115642112A (zh) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 一种用于硅片的背封装置及背封方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020098713A1 (en) * 1997-07-29 2002-07-25 Francois J. Henley Clustertool system software using plasma immersion ion implantation
US20050208776A1 (en) * 2004-03-22 2005-09-22 Texas Instruments Inc. Interface improvement by stress application during oxide growth through use of backside films
US20070173045A1 (en) * 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
TW201237969A (en) * 2011-03-03 2012-09-16 Toshiba Kk Method of manufacturing semiconductor device
TW201434155A (zh) * 2013-02-27 2014-09-01 Taiwan Semiconductor Mfg 半導體裝置及其製造方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296385A (en) 1991-12-31 1994-03-22 Texas Instruments Incorporated Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing
JPH05315371A (ja) * 1992-05-12 1993-11-26 Fujitsu Ltd 化合物半導体装置の製造方法
JP3161450B2 (ja) 1999-02-02 2001-04-25 日本電気株式会社 基板処理装置、ガス供給方法、及び、レーザ光供給方法
JP3505678B2 (ja) * 1999-08-25 2004-03-08 住友重機械工業株式会社 ウエハの歪修正装置
JP2001274048A (ja) * 2000-03-24 2001-10-05 Hitachi Ltd 半導体装置の製造方法及び加工装置
KR20020034492A (ko) * 2000-11-02 2002-05-09 박종섭 반도체 소자의 제조방법
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
US7781715B2 (en) 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US20080128019A1 (en) 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
US7776746B2 (en) 2007-02-28 2010-08-17 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
US8846532B2 (en) 2007-02-28 2014-09-30 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
TWI476836B (zh) 2008-05-02 2015-03-11 Applied Materials Inc 用於旋轉基板之非徑向溫度控制系統
US20090278287A1 (en) * 2008-05-12 2009-11-12 Yun Wang Substrate processing with reduced warpage and/or controlled strain
US20100109060A1 (en) 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
JP2010225830A (ja) * 2009-03-24 2010-10-07 Mitsumi Electric Co Ltd 半導体装置の製造方法
EP2937898A1 (en) * 2009-07-15 2015-10-28 Silanna Semiconductor U.S.A., Inc. Semiconductor-on-insulator with backside heat dissipation
SG169302A1 (en) 2009-08-25 2011-03-30 Rohm & Haas Elect Mat Enhanced method of forming nickel silicides
JP2011119472A (ja) * 2009-12-03 2011-06-16 Panasonic Corp 半導体製造装置
CN102420176A (zh) * 2011-06-15 2012-04-18 上海华力微电子有限公司 一种改善半导体晶片翘曲的方法
US8466530B2 (en) 2011-06-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Co-implant for backside illumination sensor
JP6545460B2 (ja) * 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
CN103094098A (zh) * 2013-01-14 2013-05-08 陆伟 一种解决晶圆破片的方法
JP2015012241A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子およびその製造方法、ならびに電子機器
KR102133490B1 (ko) * 2013-11-11 2020-07-13 에스케이하이닉스 주식회사 트랜지스터, 트랜지스터의 제조 방법 및 트랜지스터를 포함하는 전자장치
WO2015157507A1 (en) * 2014-04-09 2015-10-15 Tokyo Electron Limited Method for correcting wafer bow from overlay
US9159621B1 (en) * 2014-04-29 2015-10-13 Applied Materials, Inc. Dicing tape protection for wafer dicing using laser scribe process
JP6510310B2 (ja) * 2014-05-12 2019-05-08 ローム株式会社 半導体装置
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US9613870B2 (en) * 2015-06-30 2017-04-04 International Business Machines Corporation Gate stack formed with interrupted deposition processes and laser annealing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020098713A1 (en) * 1997-07-29 2002-07-25 Francois J. Henley Clustertool system software using plasma immersion ion implantation
US20050208776A1 (en) * 2004-03-22 2005-09-22 Texas Instruments Inc. Interface improvement by stress application during oxide growth through use of backside films
US20070173045A1 (en) * 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
TW201237969A (en) * 2011-03-03 2012-09-16 Toshiba Kk Method of manufacturing semiconductor device
TW201434155A (zh) * 2013-02-27 2014-09-01 Taiwan Semiconductor Mfg 半導體裝置及其製造方法

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TWI729498B (zh) 2021-06-01
CN116435167A (zh) 2023-07-14
CN116435172A (zh) 2023-07-14
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