TWI671427B - 噴射頭及使用該噴射頭的設備 - Google Patents

噴射頭及使用該噴射頭的設備 Download PDF

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Publication number
TWI671427B
TWI671427B TW104126021A TW104126021A TWI671427B TW I671427 B TWI671427 B TW I671427B TW 104126021 A TW104126021 A TW 104126021A TW 104126021 A TW104126021 A TW 104126021A TW I671427 B TWI671427 B TW I671427B
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TW
Taiwan
Prior art keywords
substrate
spray head
reactant
region
reactants
Prior art date
Application number
TW104126021A
Other languages
English (en)
Chinese (zh)
Other versions
TW201619433A (zh
Inventor
Ivan L. Berry Iii
伊凡 Ｌ 貝里三世
Thorsten Lill
托爾斯滕 立爾
Kenneth Reese Reynolds
肯尼斯 里斯 雷諾茲
Original Assignee
Lam Research Corporation
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corporation, 美商蘭姆研究公司 filed Critical Lam Research Corporation
Publication of TW201619433A publication Critical patent/TW201619433A/zh
Application granted granted Critical
Publication of TWI671427B publication Critical patent/TWI671427B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
TW104126021A 2014-08-12 2015-08-11 噴射頭及使用該噴射頭的設備 TWI671427B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/458,161 2014-08-12
US14/458,161 US9837254B2 (en) 2014-08-12 2014-08-12 Differentially pumped reactive gas injector

Publications (2)

Publication Number Publication Date
TW201619433A TW201619433A (zh) 2016-06-01
TWI671427B true TWI671427B (zh) 2019-09-11

Family

ID=55302668

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104126021A TWI671427B (zh) 2014-08-12 2015-08-11 噴射頭及使用該噴射頭的設備
TW108120628A TWI702307B (zh) 2014-08-12 2015-08-11 噴射頭及使用該噴射頭的設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108120628A TWI702307B (zh) 2014-08-12 2015-08-11 噴射頭及使用該噴射頭的設備

Country Status (6)

Country Link
US (2) US9837254B2 (enExample)
JP (1) JP6599166B2 (enExample)
KR (1) KR102513666B1 (enExample)
CN (2) CN109402637B (enExample)
SG (1) SG10201506242SA (enExample)
TW (2) TWI671427B (enExample)

Cited By (5)

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US10580628B2 (en) 2014-08-12 2020-03-03 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US11062920B2 (en) 2014-08-29 2021-07-13 Lam Research Corporation Ion injector and lens system for ion beam milling
US11289306B2 (en) 2016-02-25 2022-03-29 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US12029133B2 (en) 2019-02-28 2024-07-02 Lam Research Corporation Ion beam etching with sidewall cleaning

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US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
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KR102208609B1 (ko) * 2018-12-28 2021-01-28 (주)에스테크 화학 기상 증착용 샤워 헤드 및 이를 구비한 증착 장치
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US20180047548A1 (en) 2018-02-15
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US9837254B2 (en) 2017-12-05
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