TWI666682B - 半導體處理方法以及於半導體基板上製造半導體裝置的方法 - Google Patents

半導體處理方法以及於半導體基板上製造半導體裝置的方法 Download PDF

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Publication number
TWI666682B
TWI666682B TW104118057A TW104118057A TWI666682B TW I666682 B TWI666682 B TW I666682B TW 104118057 A TW104118057 A TW 104118057A TW 104118057 A TW104118057 A TW 104118057A TW I666682 B TWI666682 B TW I666682B
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TW
Taiwan
Prior art keywords
process chamber
semiconductor substrate
semiconductor
semiconductor processing
processing system
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TW104118057A
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English (en)
Chinese (zh)
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TW201603113A (zh
Inventor
Bert Jongbloed
伯特 宗補羅度
Dieter Pierreux
迪特爾 皮耶賀
Cornelius A. Van Der Jeugd
德 捷 康奈爾斯Ａ 樊
Herbert Terhorst
赫伯特 特后司特
Lucian Jdira
路西安 堤拉
Radko G. Bankras
瑞德寇Ｇ 班克瑞斯
Theodorus G. M. Oosterlaken
式朵拉斯Ｇ Ｍ 亞斯特雷肯
Original Assignee
Asm Ip Holding B. V.
荷蘭商Ａｓｍ Ｉｐ控股公司
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Publication of TW201603113A publication Critical patent/TW201603113A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
TW104118057A 2014-06-05 2015-06-04 半導體處理方法以及於半導體基板上製造半導體裝置的方法 TWI666682B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462008404P 2014-06-05 2014-06-05
US62/008,404 2014-06-05

Publications (2)

Publication Number Publication Date
TW201603113A TW201603113A (zh) 2016-01-16
TWI666682B true TWI666682B (zh) 2019-07-21

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Country Status (4)

Country Link
US (2) US9431238B2 (enExample)
JP (2) JP6381486B2 (enExample)
KR (1) KR102172363B1 (enExample)
TW (1) TWI666682B (enExample)

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WO2017171817A1 (en) * 2016-03-31 2017-10-05 Intel Corporation Flowable dielectrics from vapor phase precursors
KR20190137967A (ko) * 2017-06-02 2019-12-11 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 증착된 막들의 품질 개선
JP6752249B2 (ja) * 2018-03-27 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
KR102771903B1 (ko) 2019-08-16 2025-02-27 삼성전자주식회사 저유전체 물질 층을 포함하는 반도체 소자 형성 방법
US20240167153A1 (en) * 2021-03-30 2024-05-23 Lam Research Corporation In-situ film annealing in substrate processing

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Also Published As

Publication number Publication date
JP6381486B2 (ja) 2018-08-29
KR102172363B1 (ko) 2020-11-02
US20170011910A1 (en) 2017-01-12
JP2015233137A (ja) 2015-12-24
US20150357184A1 (en) 2015-12-10
JP2018198318A (ja) 2018-12-13
KR20150140232A (ko) 2015-12-15
JP6836551B2 (ja) 2021-03-03
TW201603113A (zh) 2016-01-16
US9431238B2 (en) 2016-08-30

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