JP6381486B2 - 半導体基板のための反応性硬化プロセス - Google Patents
半導体基板のための反応性硬化プロセス Download PDFInfo
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Description
さらに以下に説明するように、硬化プロセスについての種々の図面の実験はそれぞれ、過酸化水素および他の酸化剤を利用している。硬化プロセスは、アルメレ、オランダのASM International N.V.から入手可能なA412(商標)垂直炉で実施した。この炉は、ウェーハボートに保持される基板と共に、300mmの直径を有する150個の大量の半導体基板またはウェーハを収容できるプロセスチャンバを有する。本明細書に説明されているように、米国仮特許出願第61/972,005号に記載されている過酸化水素供給システムを使用してH2O2をプロセスチャンバに提供した。
N2流 5slm
H2O流 7slm
H2O2流 1.6slm
圧力 100Torr
温度 100℃〜500℃
Claims (14)
- 縦型炉の高温壁バッチプロセスチャンバに複数の半導体基板を提供し、ここで前記半導体基板がウェーハボートに保持されるステップと、
前記プロセスチャンバにおける前記半導体基板を、H2O2を含有する雰囲気に露出するステップと、
前記半導体基板を露出しながら、300Torr以下にて前記プロセスチャンバに圧力を提供するステップと
を含み、
前記半導体基板を露出している間、前記プロセスチャンバに酸化ガスを循環的に交互に提供するステップをさらに含み、
前記酸化ガスを循環的に交互に提供するステップは、複数のサイクルを実施することを含み、各サイクルは、前記半導体基板を、過酸化水素を含む第1の酸化ガスと、蒸気、オゾン、および酸素からなる群から選択される1種以上のガスを含む第2の酸化ガスとに、異なる時に露出することを含む、半導体処理のための方法。 - 前記圧力が150Torr以下である、請求項1に記載の方法。
- 前記プロセスチャンバにおけるH2O2の滞留時間が5分以下である、請求項1に記載の方法。
- 流動可能な誘電体膜が前記基板上に堆積され、前記誘電体膜が、ケイ素、窒素、酸素および水素を含む膜である、請求項1に記載の方法。
- 前記雰囲気が水素をさらに含み、前記半導体基板を露出するステップが、前記誘電体膜から窒素を取り除く、請求項4に記載の方法。
- 前記プロセスチャンバの上流の液体としてH2O2を計量するステップと、
前記液体をエバポレータで蒸発させるステップと、
蒸発したH2O2を前記プロセスチャンバ内に流動させるステップと
をさらに含み、前記液体を蒸発させている間、前記エバポレータは120℃以下の温度に維持される、請求項1に記載の方法。 - 前記雰囲気はH2O2と異なる1種以上の追加の酸化種をさらに含み、前記追加の酸化種はオゾン、酸素、およびH2Oからなる群から選択される、請求項1に記載の方法。
- 前記プロセスチャンバ内の圧力を硬化圧力に減少させるために前記プロセスチャンバを排気するステップであって、前記プロセスチャンバは、前記半導体基板の露出を開始する前に50Torr未満に排気されない、ステップをさらに含む、請求項1に記載の方法。
- 前記半導体基板を前記プロセスチャンバにロードしている間、および/または前記半導体基板を加熱している間、前記半導体基板をO2に露出するステップをさらに含み、前記半導体基板のロードが比較的低いプロセスチャンバ温度で実施され、前記プロセスチャンバ温度は前記半導体基板の露出を開始した後に増加する、請求項1に記載の方法。
- 高温壁と、ウェーハボートにおいて複数の半導体基板を収容するように構成されるバッチプロセスチャンバとを備える縦型炉を含む、半導体処理システムであって、前記半導体処理システムは、
プロセスチャンバにおける半導体基板を、H2O2を含有する雰囲気に露出し、
前記基板を、H2O2を含有する雰囲気に露出しながら、300Torr以下にプロセスチャンバ圧力を維持する
ように構成され、
前記半導体処理システムは、前記半導体基板を露出している間、前記プロセスチャンバに酸化ガスを循環的に交互に提供するように構成され、
前記酸化ガスを循環的に交互に提供することは、複数のサイクルを実施することを含み、各サイクルは、前記半導体基板を、過酸化水素を含む第1の酸化ガスと、蒸気、オゾン、および酸素からなる群から選択される1種以上のガスを含む第2の酸化ガスとに、異なる時に露出することを含む、システム。 - 前記半導体処理システムは、前記基板を、H2O2を含有する雰囲気に露出しながら、150Torr以下に前記プロセスチャンバ圧力を維持するように構成される、請求項10に記載のシステム。
- 前記半導体処理システムは、前記半導体基板をロードした後、前記プロセスチャンバ内の圧力を硬化圧力に減少させるように構成され、前記プロセスチャンバは、前記半導体基板の、H2O2を含有する雰囲気への露出を開始する前に50Torr未満に排気されない、請求項10に記載のシステム。
- 前記半導体処理システムは、前記半導体基板を前記プロセスチャンバにロードしている間、および/または前記半導体基板を加熱している間、前記半導体基板をO2に露出するように構成され、前記半導体処理システムは、前記半導体基板をロードしている間、比較的低いプロセスチャンバ温度を維持し、前記半導体基板の露出を開始した後に前記プロセスチャンバ温度を増加させるように構成される、請求項10に記載のシステム。
- H2O2種の流量、チャンバ圧力、およびチャンバ温度の条件は、前記プロセスチャンバ内のH2O2種の平均滞留時間が5分未満になるように設定される、請求項10に記載のシステム。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017171817A1 (en) * | 2016-03-31 | 2017-10-05 | Intel Corporation | Flowable dielectrics from vapor phase precursors |
KR20190137967A (ko) * | 2017-06-02 | 2019-12-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 상에 증착된 막들의 품질 개선 |
JP6752249B2 (ja) * | 2018-03-27 | 2020-09-09 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
KR20210021420A (ko) | 2019-08-16 | 2021-02-26 | 삼성전자주식회사 | 저유전체 물질 층을 포함하는 반도체 소자 형성 방법 |
WO2022212202A1 (en) * | 2021-03-30 | 2022-10-06 | Lam Research Corporation | In-situ film annealing in substrate processing |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4784975A (en) * | 1986-10-23 | 1988-11-15 | International Business Machines Corporation | Post-oxidation anneal of silicon dioxide |
WO1994001885A1 (en) | 1992-07-04 | 1994-01-20 | Christopher David Dobson | A method of treating a semiconductor wafer |
JP3660469B2 (ja) * | 1996-07-05 | 2005-06-15 | 日本電信電話株式会社 | Soi基板の製造方法 |
JP3291227B2 (ja) | 1997-11-28 | 2002-06-10 | 大陽東洋酸素株式会社 | 過酸化水素蒸気による処理システムにおける過酸化水素蒸気濃度検出方法及びその装置 |
JP3392789B2 (ja) | 1999-09-14 | 2003-03-31 | 三菱重工業株式会社 | 熱酸化方法およびその装置 |
DE19960333C2 (de) * | 1999-12-15 | 2002-12-19 | Tetra Laval Holdings & Finance | Vorrichtung zum Herstellen eines Gasgemisches und deren Verwendung |
JP2001230246A (ja) | 2000-02-17 | 2001-08-24 | Mitsubishi Heavy Ind Ltd | 半導体の熱酸化方法および熱酸化装置 |
US6492283B2 (en) | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
JP3437830B2 (ja) * | 2000-11-28 | 2003-08-18 | 東京エレクトロン株式会社 | 成膜方法 |
US6759081B2 (en) | 2001-05-11 | 2004-07-06 | Asm International, N.V. | Method of depositing thin films for magnetic heads |
US6562735B1 (en) | 2001-12-11 | 2003-05-13 | Lsi Logic Corporation | Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants |
US6905939B2 (en) | 2002-02-27 | 2005-06-14 | Applied Materials, Inc. | Process for forming silicon oxide material |
JPWO2004027849A1 (ja) | 2002-09-20 | 2006-01-19 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
US20060165904A1 (en) | 2005-01-21 | 2006-07-27 | Asm Japan K.K. | Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission |
EP1790758A1 (en) | 2005-11-25 | 2007-05-30 | Interuniversitair Microelektronica Centrum ( Imec) | Atomic layer deposition (ald) method for producing a high quality layer |
US20060286306A1 (en) | 2005-06-17 | 2006-12-21 | Asm Japan K.K. | Method of producing advanced low dielectric constant film by UV light emission |
US20070009673A1 (en) | 2005-07-06 | 2007-01-11 | Asm Japan K.K. | Insulation film and method for manufacturing same |
JP2008010441A (ja) * | 2006-06-27 | 2008-01-17 | Toshiba Corp | シリコン酸化膜の形成方法 |
US7981815B2 (en) | 2006-07-20 | 2011-07-19 | Hitachi Kokusai Electric Inc. | Semiconductor device producing method and substrate processing apparatus |
US7718553B2 (en) | 2006-09-21 | 2010-05-18 | Asm Japan K.K. | Method for forming insulation film having high density |
US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
US7501292B2 (en) | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
JP2009084625A (ja) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 原料ガスの供給システム及び成膜装置 |
US20090093135A1 (en) | 2007-10-04 | 2009-04-09 | Asm Japan K.K. | Semiconductor manufacturing apparatus and method for curing material with uv light |
US20090093134A1 (en) | 2007-10-05 | 2009-04-09 | Asm Japan K.K | Semiconductor manufacturing apparatus and method for curing materials with uv light |
US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US20090305515A1 (en) | 2008-06-06 | 2009-12-10 | Dustin Ho | Method and apparatus for uv curing with water vapor |
US8765233B2 (en) | 2008-12-09 | 2014-07-01 | Asm Japan K.K. | Method for forming low-carbon CVD film for filling trenches |
US8980382B2 (en) * | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) * | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US20110151677A1 (en) * | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
JP2013517616A (ja) * | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
JP2012060000A (ja) | 2010-09-10 | 2012-03-22 | Toshiba Corp | シリコン酸化膜の製造装置 |
US20120177846A1 (en) * | 2011-01-07 | 2012-07-12 | Applied Materials, Inc. | Radical steam cvd |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
JP6038043B2 (ja) * | 2011-11-21 | 2016-12-07 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
WO2013094680A1 (ja) | 2011-12-20 | 2013-06-27 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および気化装置 |
WO2013148262A1 (en) | 2012-03-28 | 2013-10-03 | Rasirc | Method of delivering a process gas from a multi-component solution |
TW201403711A (zh) * | 2012-07-02 | 2014-01-16 | Applied Materials Inc | 利用氣相化學暴露之低k介電質損傷修復 |
US9545585B2 (en) | 2012-07-16 | 2017-01-17 | Rasirc, Inc. | Method, system, and device for delivery of high purity hydrogen peroxide |
CN104428877B (zh) * | 2012-07-27 | 2016-12-07 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法 |
US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
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