KR102172363B1 - 반도체 기판들에 대한 반응성 큐어링 공정 - Google Patents

반도체 기판들에 대한 반응성 큐어링 공정 Download PDF

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KR102172363B1
KR102172363B1 KR1020150078909A KR20150078909A KR102172363B1 KR 102172363 B1 KR102172363 B1 KR 102172363B1 KR 1020150078909 A KR1020150078909 A KR 1020150078909A KR 20150078909 A KR20150078909 A KR 20150078909A KR 102172363 B1 KR102172363 B1 KR 102172363B1
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process chamber
delete delete
curing
semiconductor substrate
temperature
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KR20150140232A (ko
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베르트 용블루트
디터르 피에뤽스
데르 예흐트 코르넬리위스 아. 판
헤르버르트 테르호르스트
뤼시안 이디라
랏코 쥐. 방크라스
테오도뤼스 쥐.엠. 오스테를라컨
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에이에스엠 아이피 홀딩 비.브이.
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    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020150078909A 2014-06-05 2015-06-04 반도체 기판들에 대한 반응성 큐어링 공정 Active KR102172363B1 (ko)

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US201462008404P 2014-06-05 2014-06-05
US62/008,404 2014-06-05

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KR20150140232A KR20150140232A (ko) 2015-12-15
KR102172363B1 true KR102172363B1 (ko) 2020-11-02

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US (2) US9431238B2 (enExample)
JP (2) JP6381486B2 (enExample)
KR (1) KR102172363B1 (enExample)
TW (1) TWI666682B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017171817A1 (en) * 2016-03-31 2017-10-05 Intel Corporation Flowable dielectrics from vapor phase precursors
KR20190137967A (ko) * 2017-06-02 2019-12-11 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 증착된 막들의 품질 개선
JP6752249B2 (ja) * 2018-03-27 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
KR102771903B1 (ko) 2019-08-16 2025-02-27 삼성전자주식회사 저유전체 물질 층을 포함하는 반도체 소자 형성 방법
US20240167153A1 (en) * 2021-03-30 2024-05-23 Lam Research Corporation In-situ film annealing in substrate processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094680A1 (ja) 2011-12-20 2013-06-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および気化装置
WO2014007924A1 (en) 2012-07-02 2014-01-09 Applied Materials, Inc. Low-k dielectric damage repair by vapor-phase chemical exposure

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
DE69327176T2 (de) 1992-07-04 2000-05-31 Trikon Equipments Ltd., Littleton-Upon-Severn Behandlungsverfahren für eine halbleiterscheibe.
JP3660469B2 (ja) * 1996-07-05 2005-06-15 日本電信電話株式会社 Ｓｏｉ基板の製造方法
JP3291227B2 (ja) 1997-11-28 2002-06-10 大陽東洋酸素株式会社 過酸化水素蒸気による処理システムにおける過酸化水素蒸気濃度検出方法及びその装置
JP3392789B2 (ja) 1999-09-14 2003-03-31 三菱重工業株式会社 熱酸化方法およびその装置
DE19960333C2 (de) * 1999-12-15 2002-12-19 Tetra Laval Holdings & Finance Vorrichtung zum Herstellen eines Gasgemisches und deren Verwendung
JP2001230246A (ja) 2000-02-17 2001-08-24 Mitsubishi Heavy Ind Ltd 半導体の熱酸化方法および熱酸化装置
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
JP3437830B2 (ja) * 2000-11-28 2003-08-18 東京エレクトロン株式会社 成膜方法
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US6562735B1 (en) 2001-12-11 2003-05-13 Lsi Logic Corporation Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants
US6905939B2 (en) 2002-02-27 2005-06-14 Applied Materials, Inc. Process for forming silicon oxide material
JPWO2004027849A1 (ja) 2002-09-20 2006-01-19 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
US20060165904A1 (en) 2005-01-21 2006-07-27 Asm Japan K.K. Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission
EP1790758A1 (en) 2005-11-25 2007-05-30 Interuniversitair Microelektronica Centrum ( Imec) Atomic layer deposition (ald) method for producing a high quality layer
US20060286306A1 (en) 2005-06-17 2006-12-21 Asm Japan K.K. Method of producing advanced low dielectric constant film by UV light emission
US20070009673A1 (en) 2005-07-06 2007-01-11 Asm Japan K.K. Insulation film and method for manufacturing same
JP2008010441A (ja) * 2006-06-27 2008-01-17 Toshiba Corp シリコン酸化膜の形成方法
KR101060633B1 (ko) * 2006-07-20 2011-08-31 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 디바이스의 제조 방법 및 기판 처리 장치
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
JP2009084625A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
US20090093135A1 (en) 2007-10-04 2009-04-09 Asm Japan K.K. Semiconductor manufacturing apparatus and method for curing material with uv light
US20090093134A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K Semiconductor manufacturing apparatus and method for curing materials with uv light
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US20090305515A1 (en) 2008-06-06 2009-12-10 Dustin Ho Method and apparatus for uv curing with water vapor
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8741788B2 (en) * 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US20110151677A1 (en) * 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8647992B2 (en) * 2010-01-06 2014-02-11 Applied Materials, Inc. Flowable dielectric using oxide liner
JP2012060000A (ja) 2010-09-10 2012-03-22 Toshiba Corp シリコン酸化膜の製造装置
US20120177846A1 (en) * 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
WO2013077321A1 (ja) * 2011-11-21 2013-05-30 株式会社日立国際電気 半導体装置の製造装置、半導体装置の製造方法及び記録媒体
JP6290856B2 (ja) * 2012-03-28 2018-03-07 ラシリック, インコーポレイテッドRASIRC, Inc. 多成分溶液からプロセスガスを送達する方法
WO2014014511A1 (en) 2012-07-16 2014-01-23 Rasirc Method, system, and device for delivery of high purity hydrogen peroxide
CN104428877B (zh) * 2012-07-27 2016-12-07 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094680A1 (ja) 2011-12-20 2013-06-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および気化装置
WO2014007924A1 (en) 2012-07-02 2014-01-09 Applied Materials, Inc. Low-k dielectric damage repair by vapor-phase chemical exposure

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JP6381486B2 (ja) 2018-08-29
US20170011910A1 (en) 2017-01-12
JP2015233137A (ja) 2015-12-24
US20150357184A1 (en) 2015-12-10
JP2018198318A (ja) 2018-12-13
KR20150140232A (ko) 2015-12-15
JP6836551B2 (ja) 2021-03-03
TWI666682B (zh) 2019-07-21
TW201603113A (zh) 2016-01-16
US9431238B2 (en) 2016-08-30

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