TWI661871B - 基板處理裝置以及基板處理方法 - Google Patents

基板處理裝置以及基板處理方法 Download PDF

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Publication number
TWI661871B
TWI661871B TW107102925A TW107102925A TWI661871B TW I661871 B TWI661871 B TW I661871B TW 107102925 A TW107102925 A TW 107102925A TW 107102925 A TW107102925 A TW 107102925A TW I661871 B TWI661871 B TW I661871B
Authority
TW
Taiwan
Prior art keywords
liquid
processing
valve
processing liquid
flow
Prior art date
Application number
TW107102925A
Other languages
English (en)
Chinese (zh)
Other versions
TW201834754A (zh
Inventor
Hitoshi Nakai
中井仁司
Original Assignee
SCREEN Holdings Co., Ltd.
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCREEN Holdings Co., Ltd., 日商斯庫林集團股份有限公司 filed Critical SCREEN Holdings Co., Ltd.
Publication of TW201834754A publication Critical patent/TW201834754A/zh
Application granted granted Critical
Publication of TWI661871B publication Critical patent/TWI661871B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
TW107102925A 2017-02-27 2018-01-26 基板處理裝置以及基板處理方法 TWI661871B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017035048 2017-02-27
JP2017-035048 2017-02-27
JP2017242942A JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法
JP2017-242942 2017-12-19

Publications (2)

Publication Number Publication Date
TW201834754A TW201834754A (zh) 2018-10-01
TWI661871B true TWI661871B (zh) 2019-06-11

Family

ID=63528274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107102925A TWI661871B (zh) 2017-02-27 2018-01-26 基板處理裝置以及基板處理方法

Country Status (4)

Country Link
JP (1) JP6975630B2 (https=)
KR (1) KR102226378B1 (https=)
CN (1) CN110235226B (https=)
TW (1) TWI661871B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7487006B2 (ja) * 2020-05-19 2024-05-20 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP7509657B2 (ja) * 2020-10-29 2024-07-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil
JP2024120202A (ja) 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2024158822A (ja) * 2023-04-28 2024-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
TWI404572B (zh) * 2007-02-13 2013-08-11 Musashi Engineering Inc A liquid leakage detecting means and a liquid material applying means provided with the mechanism
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JPH0770507B2 (ja) * 1989-07-05 1995-07-31 三菱電機株式会社 半導体ウエハ用洗浄装置
JP3577580B2 (ja) * 1998-03-17 2004-10-13 東京エレクトロン株式会社 空気駆動式液体供給装置
JP3730079B2 (ja) * 2000-03-21 2005-12-21 大日本スクリーン製造株式会社 基板処理装置
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법
CN103295938B (zh) * 2013-05-29 2017-10-10 上海华虹宏力半导体制造有限公司 半导体处理设备
JP6059087B2 (ja) * 2013-05-31 2017-01-11 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN109037111B (zh) * 2015-02-25 2022-03-22 株式会社思可林集团 基板处理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404572B (zh) * 2007-02-13 2013-08-11 Musashi Engineering Inc A liquid leakage detecting means and a liquid material applying means provided with the mechanism
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Also Published As

Publication number Publication date
KR102226378B1 (ko) 2021-03-10
TW201834754A (zh) 2018-10-01
CN110235226B (zh) 2022-12-23
KR20190100368A (ko) 2019-08-28
JP2018142694A (ja) 2018-09-13
CN110235226A (zh) 2019-09-13
JP6975630B2 (ja) 2021-12-01

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