JP6975630B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP6975630B2
JP6975630B2 JP2017242942A JP2017242942A JP6975630B2 JP 6975630 B2 JP6975630 B2 JP 6975630B2 JP 2017242942 A JP2017242942 A JP 2017242942A JP 2017242942 A JP2017242942 A JP 2017242942A JP 6975630 B2 JP6975630 B2 JP 6975630B2
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Japan
Prior art keywords
liquid
valve
treatment liquid
pipe
nozzle
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JP2017242942A
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English (en)
Japanese (ja)
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JP2018142694A (ja
JP2018142694A5 (https=
Inventor
仁司 中井
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to PCT/JP2018/002151 priority Critical patent/WO2018155054A1/ja
Priority to KR1020197022463A priority patent/KR102226378B1/ko
Priority to CN201880009209.0A priority patent/CN110235226B/zh
Priority to TW107102925A priority patent/TWI661871B/zh
Publication of JP2018142694A publication Critical patent/JP2018142694A/ja
Publication of JP2018142694A5 publication Critical patent/JP2018142694A5/ja
Application granted granted Critical
Publication of JP6975630B2 publication Critical patent/JP6975630B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection

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  • Cleaning Or Drying Semiconductors (AREA)
JP2017242942A 2017-02-27 2017-12-19 基板処理装置および基板処理方法 Active JP6975630B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2018/002151 WO2018155054A1 (ja) 2017-02-27 2018-01-24 基板処理装置および基板処理方法
KR1020197022463A KR102226378B1 (ko) 2017-02-27 2018-01-24 기판 처리 장치 및 기판 처리 방법
CN201880009209.0A CN110235226B (zh) 2017-02-27 2018-01-24 基板处理装置以及基板处理方法
TW107102925A TWI661871B (zh) 2017-02-27 2018-01-26 基板處理裝置以及基板處理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017035048 2017-02-27
JP2017035048 2017-02-27

Publications (3)

Publication Number Publication Date
JP2018142694A JP2018142694A (ja) 2018-09-13
JP2018142694A5 JP2018142694A5 (https=) 2021-07-26
JP6975630B2 true JP6975630B2 (ja) 2021-12-01

Family

ID=63528274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017242942A Active JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法

Country Status (4)

Country Link
JP (1) JP6975630B2 (https=)
KR (1) KR102226378B1 (https=)
CN (1) CN110235226B (https=)
TW (1) TWI661871B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7487006B2 (ja) * 2020-05-19 2024-05-20 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP7509657B2 (ja) * 2020-10-29 2024-07-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil
JP2024120202A (ja) 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2024158822A (ja) * 2023-04-28 2024-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JPH0770507B2 (ja) * 1989-07-05 1995-07-31 三菱電機株式会社 半導体ウエハ用洗浄装置
JP3577580B2 (ja) * 1998-03-17 2004-10-13 東京エレクトロン株式会社 空気駆動式液体供給装置
JP3730079B2 (ja) * 2000-03-21 2005-12-21 大日本スクリーン製造株式会社 基板処理装置
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5073310B2 (ja) * 2007-02-13 2012-11-14 武蔵エンジニアリング株式会社 漏液検知機構およびそれを備えた液体材料塗布装置
JP5030767B2 (ja) * 2007-12-25 2012-09-19 大日本スクリーン製造株式会社 基板処理装置、および基板処理装置の異常処理方法
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법
CN103295938B (zh) * 2013-05-29 2017-10-10 上海华虹宏力半导体制造有限公司 半导体处理设备
JP6059087B2 (ja) * 2013-05-31 2017-01-11 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN109037111B (zh) * 2015-02-25 2022-03-22 株式会社思可林集团 基板处理装置
JP6534578B2 (ja) * 2015-08-03 2019-06-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6624599B2 (ja) * 2015-08-05 2019-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Also Published As

Publication number Publication date
KR102226378B1 (ko) 2021-03-10
TW201834754A (zh) 2018-10-01
CN110235226B (zh) 2022-12-23
KR20190100368A (ko) 2019-08-28
JP2018142694A (ja) 2018-09-13
CN110235226A (zh) 2019-09-13
TWI661871B (zh) 2019-06-11

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