KR102226378B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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KR102226378B1
KR102226378B1 KR1020197022463A KR20197022463A KR102226378B1 KR 102226378 B1 KR102226378 B1 KR 102226378B1 KR 1020197022463 A KR1020197022463 A KR 1020197022463A KR 20197022463 A KR20197022463 A KR 20197022463A KR 102226378 B1 KR102226378 B1 KR 102226378B1
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valve
liquid
substrate
processing
leakage
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Korean (ko)
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KR20190100368A (ko
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히토시 나카이
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가부시키가이샤 스크린 홀딩스
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Priority claimed from PCT/JP2018/002151 external-priority patent/WO2018155054A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H01L21/67017—
    • H01L21/02307—
    • H01L21/02343—
    • H01L21/304—
    • H01L21/6715—
    • H01L21/67259—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection

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KR1020197022463A 2017-02-27 2018-01-24 기판 처리 장치 및 기판 처리 방법 Active KR102226378B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2017-035048 2017-02-27
JP2017035048 2017-02-27
JP2017242942A JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法
JPJP-P-2017-242942 2017-12-19
PCT/JP2018/002151 WO2018155054A1 (ja) 2017-02-27 2018-01-24 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
KR20190100368A KR20190100368A (ko) 2019-08-28
KR102226378B1 true KR102226378B1 (ko) 2021-03-10

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KR1020197022463A Active KR102226378B1 (ko) 2017-02-27 2018-01-24 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP6975630B2 (https=)
KR (1) KR102226378B1 (https=)
CN (1) CN110235226B (https=)
TW (1) TWI661871B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7487006B2 (ja) * 2020-05-19 2024-05-20 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP7509657B2 (ja) * 2020-10-29 2024-07-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil
JP2024120202A (ja) 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2024158822A (ja) * 2023-04-28 2024-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158597A (ja) 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017034188A (ja) 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法
JP2017034120A (ja) 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JPH0770507B2 (ja) * 1989-07-05 1995-07-31 三菱電機株式会社 半導体ウエハ用洗浄装置
JP3577580B2 (ja) * 1998-03-17 2004-10-13 東京エレクトロン株式会社 空気駆動式液体供給装置
JP3730079B2 (ja) * 2000-03-21 2005-12-21 大日本スクリーン製造株式会社 基板処理装置
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5073310B2 (ja) * 2007-02-13 2012-11-14 武蔵エンジニアリング株式会社 漏液検知機構およびそれを備えた液体材料塗布装置
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법
CN103295938B (zh) * 2013-05-29 2017-10-10 上海华虹宏力半导体制造有限公司 半导体处理设备
JP6059087B2 (ja) * 2013-05-31 2017-01-11 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN109037111B (zh) * 2015-02-25 2022-03-22 株式会社思可林集团 基板处理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158597A (ja) 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017034120A (ja) 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

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Publication number Publication date
TW201834754A (zh) 2018-10-01
CN110235226B (zh) 2022-12-23
KR20190100368A (ko) 2019-08-28
JP2018142694A (ja) 2018-09-13
CN110235226A (zh) 2019-09-13
JP6975630B2 (ja) 2021-12-01
TWI661871B (zh) 2019-06-11

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