CN110235226B - 基板处理装置以及基板处理方法 - Google Patents

基板处理装置以及基板处理方法 Download PDF

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Publication number
CN110235226B
CN110235226B CN201880009209.0A CN201880009209A CN110235226B CN 110235226 B CN110235226 B CN 110235226B CN 201880009209 A CN201880009209 A CN 201880009209A CN 110235226 B CN110235226 B CN 110235226B
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Prior art keywords
liquid
leakage
valve
processing liquid
substrate
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CN201880009209.0A
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Chinese (zh)
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CN110235226A (zh
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中井仁司
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority claimed from PCT/JP2018/002151 external-priority patent/WO2018155054A1/ja
Publication of CN110235226A publication Critical patent/CN110235226A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection

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  • Cleaning Or Drying Semiconductors (AREA)
CN201880009209.0A 2017-02-27 2018-01-24 基板处理装置以及基板处理方法 Active CN110235226B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017035048 2017-02-27
JP2017-035048 2017-02-27
JP2017242942A JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法
JP2017-242942 2017-12-19
PCT/JP2018/002151 WO2018155054A1 (ja) 2017-02-27 2018-01-24 基板処理装置および基板処理方法

Publications (2)

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CN110235226A CN110235226A (zh) 2019-09-13
CN110235226B true CN110235226B (zh) 2022-12-23

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CN201880009209.0A Active CN110235226B (zh) 2017-02-27 2018-01-24 基板处理装置以及基板处理方法

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JP (1) JP6975630B2 (https=)
KR (1) KR102226378B1 (https=)
CN (1) CN110235226B (https=)
TW (1) TWI661871B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7487006B2 (ja) * 2020-05-19 2024-05-20 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP7509657B2 (ja) * 2020-10-29 2024-07-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil
JP2024120202A (ja) 2023-02-24 2024-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2024158822A (ja) * 2023-04-28 2024-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338827A (ja) * 1989-07-05 1991-02-19 Mitsubishi Electric Corp 半導体ウエハ用洗浄装置
KR19990077948A (ko) * 1998-03-17 1999-10-25 히가시 데쓰로 공기구동식액체공급장치
JP2001267288A (ja) * 2000-03-21 2001-09-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101436000A (zh) * 2003-07-28 2009-05-20 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103295938A (zh) * 2013-05-29 2013-09-11 上海宏力半导体制造有限公司 半导体处理设备
JP2014236079A (ja) * 2013-05-31 2014-12-15 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN105914167A (zh) * 2015-02-25 2016-08-31 株式会社思可林集团 基板处理装置
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JP5073310B2 (ja) * 2007-02-13 2012-11-14 武蔵エンジニアリング株式会社 漏液検知機構およびそれを備えた液体材料塗布装置
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338827A (ja) * 1989-07-05 1991-02-19 Mitsubishi Electric Corp 半導体ウエハ用洗浄装置
KR19990077948A (ko) * 1998-03-17 1999-10-25 히가시 데쓰로 공기구동식액체공급장치
JP2001267288A (ja) * 2000-03-21 2001-09-28 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101436000A (zh) * 2003-07-28 2009-05-20 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103295938A (zh) * 2013-05-29 2013-09-11 上海宏力半导体制造有限公司 半导体处理设备
JP2014236079A (ja) * 2013-05-31 2014-12-15 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN105914167A (zh) * 2015-02-25 2016-08-31 株式会社思可林集团 基板处理装置
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

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KR102226378B1 (ko) 2021-03-10
TW201834754A (zh) 2018-10-01
KR20190100368A (ko) 2019-08-28
JP2018142694A (ja) 2018-09-13
CN110235226A (zh) 2019-09-13
JP6975630B2 (ja) 2021-12-01
TWI661871B (zh) 2019-06-11

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