TWI643817B - 製造分子篩的方法 - Google Patents
製造分子篩的方法 Download PDFInfo
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- TWI643817B TWI643817B TW105102872A TW105102872A TWI643817B TW I643817 B TWI643817 B TW I643817B TW 105102872 A TW105102872 A TW 105102872A TW 105102872 A TW105102872 A TW 105102872A TW I643817 B TWI643817 B TW I643817B
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- mordenite
- sio
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 title description 23
- 239000002808 molecular sieve Substances 0.000 title description 22
- 229910052680 mordenite Inorganic materials 0.000 claims abstract description 179
- 239000013078 crystal Substances 0.000 claims abstract description 132
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims description 123
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 65
- 239000013081 microcrystal Substances 0.000 claims description 59
- 238000002441 X-ray diffraction Methods 0.000 claims description 38
- -1 alkali metal cations Chemical class 0.000 claims description 37
- 238000005342 ion exchange Methods 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000003795 chemical substances by application Substances 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000003786 synthesis reaction Methods 0.000 claims description 28
- 238000001354 calcination Methods 0.000 claims description 25
- 239000011148 porous material Substances 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- ANBBXQWFNXMHLD-UHFFFAOYSA-N aluminum;sodium;oxygen(2-) Chemical group [O-2].[O-2].[Na+].[Al+3] ANBBXQWFNXMHLD-UHFFFAOYSA-N 0.000 claims description 22
- 229910001388 sodium aluminate Inorganic materials 0.000 claims description 22
- 239000010457 zeolite Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 238000011282 treatment Methods 0.000 claims description 18
- 229910021536 Zeolite Inorganic materials 0.000 claims description 17
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052783 alkali metal Inorganic materials 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 9
- 230000008025 crystallization Effects 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000013598 vector Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- NIUZJTWSUGSWJI-UHFFFAOYSA-M triethyl(methyl)azanium;chloride Chemical compound [Cl-].CC[N+](C)(CC)CC NIUZJTWSUGSWJI-UHFFFAOYSA-M 0.000 claims description 5
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 claims 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims 2
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 claims 2
- 239000011260 aqueous acid Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 98
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 75
- 239000000243 solution Substances 0.000 description 69
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 54
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 38
- 229920002994 synthetic fiber Polymers 0.000 description 31
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 27
- 239000011734 sodium Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000000047 product Substances 0.000 description 21
- 238000004627 transmission electron microscopy Methods 0.000 description 21
- 239000002998 adhesive polymer Substances 0.000 description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 19
- 229910052757 nitrogen Inorganic materials 0.000 description 19
- 238000001179 sorption measurement Methods 0.000 description 19
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 17
- 239000003054 catalyst Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 238000003756 stirring Methods 0.000 description 14
- 239000011164 primary particle Substances 0.000 description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000003463 adsorbent Substances 0.000 description 5
- 235000012211 aluminium silicate Nutrition 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 239000005995 Aluminium silicate Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910052795 boron group element Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010555 transalkylation reaction Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000000440 bentonite Substances 0.000 description 3
- 229910000278 bentonite Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910001420 alkaline earth metal ion Chemical group 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 239000013335 mesoporous material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910017119 AlPO Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- WVEXUUSBAAAPBN-UHFFFAOYSA-N [O-2].C(C)(C)[Al+2] Chemical compound [O-2].C(C)(C)[Al+2] WVEXUUSBAAAPBN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 230000029936 alkylation Effects 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 229940045985 antineoplastic platinum compound Drugs 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012084 conversion product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- BOBLHFUVNSFZPJ-JOYXJVLSSA-N diflorasone diacetate Chemical compound C1([C@@H](F)C2)=CC(=O)C=C[C@]1(C)[C@]1(F)[C@@H]2[C@@H]2C[C@H](C)[C@@](C(=O)COC(C)=O)(OC(C)=O)[C@@]2(C)C[C@@H]1O BOBLHFUVNSFZPJ-JOYXJVLSSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 229910052622 kaolinite Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002101 lytic effect Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012229 microporous material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 235000019351 sodium silicates Nutrition 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J29/00—Catalysts comprising molecular sieves
- B01J29/04—Catalysts comprising molecular sieves having base-exchange properties, e.g. crystalline zeolites
- B01J29/06—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof
- B01J29/40—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof of the pentasil type, e.g. types ZSM-5, ZSM-8 or ZSM-11, as exemplified by patent documents US3702886, GB1334243 and US3709979, respectively
- B01J29/42—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof of the pentasil type, e.g. types ZSM-5, ZSM-8 or ZSM-11, as exemplified by patent documents US3702886, GB1334243 and US3709979, respectively containing iron group metals, noble metals or copper
- B01J29/44—Noble metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J29/00—Catalysts comprising molecular sieves
- B01J29/04—Catalysts comprising molecular sieves having base-exchange properties, e.g. crystalline zeolites
- B01J29/06—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof
- B01J29/18—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof of the mordenite type
- B01J29/20—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof of the mordenite type containing iron group metals, noble metals or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J29/00—Catalysts comprising molecular sieves
- B01J29/04—Catalysts comprising molecular sieves having base-exchange properties, e.g. crystalline zeolites
- B01J29/06—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof
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Abstract
本發明提供一種具有中孔表面積大於30m2/g且以TEM測量之平均原生晶體大小小於80nm的絲光沸石,以及製造該絲光沸石之方法。
Description
本申請案主張2015年2月4日提出之美國專利申請案第62/111,730號的權益及優先權,及2015年3月23日提出之歐洲專利申請案第15160258.8號及2016年1月21日提出之美國專利申請案第15/002,809號的優先權,該等專利文件的揭示係以全文併入本文中。
本發明關於具有小晶體大小之絲光沸石分子篩及製造該絲光沸石分子篩之方法。
在過去,分子篩材料(天然及合成二者)已證實可用作吸附劑且具有用於各種類型烴轉化反應之催化性質。特定分子篩,諸如沸石、AlPO及中孔材料為藉由X射線繞射(XRD)測定時具有明確結晶結構之有序、孔狀結晶材料。在結晶分子篩材料當中,存在大量可藉由許多通道或孔互連的空腔。在特定分子篩材料中,該等空腔及孔
大小均勻。由於該等孔的尺寸使得可接受特定尺寸之吸附分子,同時拒斥具有較大尺寸之分子,該等材料已習知為「分子篩」且用於各種工業製程。該等沸石孔可在微孔(<2nm)、中孔(2至50nm)或大孔(>50nm至200nm)大小範圍。
此等分子篩材料(天然及合成二者)包括廣泛之結晶矽酸鹽。該等矽酸鹽可描述為SiO4四面體(其具有在頂點的四個氧原子且矽原子在中心)及周期表第13族元素氧化物(例如,AlO4、BO4)四面體(其具有在頂點之四個氧原子且該周期表第13族元素係在中心)之剛性立體架構。該等四面體係由共用氧原子而規律且立體地交聯。該配置提供界定視結構的四面體配置及組成而有不同大小及形狀之孔的立體網狀結構。含有第13族元素(例如,鋁或硼)之四面體的電價係藉由在該陽離子的晶體中包括例如質子、鹼金屬或鹼土金屬陽離子而平衡。此可表示為該第13族元素(例如鋁或硼)對各種陽離子(諸如H+、Ca2+/2、Sr2+/2、Na+、K+或Li+)之數目的比等於一。鋁矽酸鹽中存在架構鋁的重要性在於提供,例如,該等材料的催化性質。
應用於催化作用中的分子篩包括天然發生或合成結晶分子篩中之任一者。該等分子篩之實例包括大孔沸石、中孔徑沸石,與小孔沸石。該等沸石與其構造同型係描述於"Atlas of Zeolite Framework Types",Ch.Baerlocher、L.B.McCusker、D.H.Olson、Elsevier編,
第六修訂版,2007,其係以引用的方式併入本文中。
分子篩材料之合成通常涉及製造包含存在分子篩中之所有元素源的合成混合物,其經常具有氫氧離子源以調整pH。在許多情況下,結構導向劑亦存在。結構導向劑係一般相信能促進分子篩形成且被認為用作在其周圍可形成特定分子篩結構之模板,從而促進所希望之分子篩形成的化合物。已使用各種化合物作為結構導向劑,包括各種類型之四級銨陽離子。
分子篩之合成係一種複雜的程序。有若干變數需要控制以使該合成的所製造之分子篩的純度、產率及品質方面最佳化。特別重要的變數係選擇合成模板(結構導向劑),其經常決定從該合成獲得何種架構類型。四級銨離子通常用作沸石觸媒之製造中的結構導向劑。
「原合成」分子篩將在其孔中含有結構導向劑,且經常使之經歷煅燒步驟以燒掉該結構導向劑且將孔騰空。就許多催化應用而言,希望將分子篩轉化成氫形式(H形式)。此可藉由首先藉由在空氣或氮中煅燒移除結構導向劑,然後離子交換而以銨陽離子置換鹼金屬陽離子(通常為鈉陽離子),然後使該分子篩經歷最終煅燒將該銨形式轉化成H形式而達成。然後使該H形式經歷各種「後處理」,諸如蒸氣處理及/或酸處理,以從該架構移除鋁或其他金屬離子。此等處理之產物經常稱為「經後處理的」。
身為大孔沸石族一員的絲光沸石係由與8員
環孔互連之12員環孔通道所組成。然而,該等8員環孔對大部分分子而言太小而無法進入,因此絲光沸石通常被視為一維孔系統。儘管有此種特徵,絲光沸石係廣泛用於工業中,特別是用於烷基化、轉烷基化、及(加氫)異構反應。為了改善於1-D通道中之物理輸送,絲光沸石晶體通常係經歷脫鋁後處理。經後處理的絲光沸石觸媒已用於重質芳族物之轉烷基化,且已顯示非常令人振奮的性能。絲光沸石可購自例如Tosoh and Zeolyst。亦希望提供具有經改良催化性能之經改良絲光沸石觸媒。
本發明在第一態樣中提供一種絲光沸石,其包含在其孔內之選自由下列所組成之群組的結構導向劑(SDA):TEA、MTEA及其混合物,具有中孔表面積大於30m2/g且包含由原生微晶體所構成的黏聚物,其中該原生微晶體之平均原生晶體大小以穿透式電子顯微術(TEM)測量為小於80nm。
本發明人已發現可能製造具有非常小晶體大小且具有高中孔表面積之絲光沸石。該非常小之原生晶體大小促使反應物化合物達到該絲光沸石的孔內之活性位點,從而提高催化效率。原生晶體之縱橫比相對低,例如小於2.0,其中該縱橫比係界定為微晶體之最長尺寸除以該微晶體之寬度,其中該微晶體之寬度係界定為在與該最長尺寸正交之方向中的該最長尺寸中間之微晶體尺寸,此
係以TEM測量。通常,該原生晶體並非縱橫比大於2.0之長形晶體或小板。
如本文所使用,用語「原生晶體」表示與黏聚物相反之單一個別晶體。原生晶體通常經由弱物理性交互作用(而非化學鍵)黏附在一起以形成黏聚物。本文中字詞「晶體」及「微晶體」係互換使用。
應暸解本文所提之本發明絲光沸石係指本發明任何態樣之絲光沸石,或根據本發明任何方法所製成之絲光沸石。
應暸解本文所提之藉由TEM測量的原生晶體大小意指使用下述實驗部分中之方法的原生晶體大小之測量。
本發明第一態樣之絲光沸石包含在其孔內之結構導向劑,且亦可稱為「原合成」絲光沸石。
合宜地,為了將「原合成」絲光沸石轉化成H形式,「原合成」之絲光沸石先於空氣或氮中煅燒以從該等孔移除結構導向劑。然後將該經煅燒之絲光沸石離子交換以使用銨陽離子置換諸如鹼金屬陽離子,諸如鈉陽離子。進一步煅燒步驟將該銨形式轉化成H形式。
就本發明之絲光沸石而言,可例如藉由在離子交換之前於空氣或惰性氣氛(諸如氮)中煅燒而從該絲光沸石架構移除結構導向劑。然而,本發明亦意外地發現,在一些情況下可能藉由離子交換但不在該離子交換之前煅燒而從本發明之絲光沸石移除鹼金屬陽離子M+。在一些
情況下,本發明之絲光沸石因此可隨意地離子交換以移除鹼金屬陽離子而毋需初步煅燒。然後藉由煅燒將該經離子交換之絲光沸石轉化成H形式,此同時移除該結構導向劑及將該絲光沸石轉化成H形式。
本發明之絲光沸石然後亦可經歷各種形式之後處理。特別是,該絲光沸石可經蒸氣及/或酸處理以增加中孔表面積及/或從該架構移除鋁,從而提高矽對氧化鋁之比。
在第二態樣中,本發明提供將本發明第一態樣之絲光沸石經歷煅燒步驟以從該孔移除TEA或MTEA所製造的經煅燒絲光沸石,該經煅燒之沸石的中孔表面積大於30m2/g且包含由原生微晶體所構成的黏聚物,其中該原生微晶體之平均原生晶體大小以TEM測量為小於80nm。
在第三態樣中,本發明提供製造根據本發明第一態樣之絲光沸石的方法,其包含:
a)提供包含矽源、鋁源、鹼金屬(M)氫氧化物、選自由四乙銨陽離子(TEA)、甲基三乙銨陽離子(MTEA)及其混合物所組成之群組的結構導向劑(SDA)源、隨意的種晶及水之合成混合物,該合成混合物具有包括下列莫耳比的組成:
Si:Al2 15-40
OH-:Si0.32
M+:Si0.32
SDA:Si0.10
H2O:Si<20
b)使該合成混合物經歷結晶條件以形成孔內包含結構導向劑(SDA)的絲光沸石之晶體。
在第四態樣中,本發明提供製造經煅燒絲光沸石之方法,其包含以下步驟:i)使本發明第一態樣之絲光沸石經歷離子交換處理以移除鹼金屬陽離子M+;然後ii)煅燒。隨意地,該鹼金屬陽離子M+係藉由離子交換從該絲光沸石移除而不在離子交換之前煅燒。或者,該方法可包括在該離子交換步驟之前的煅燒步驟。
該煅燒之絲光沸石亦可在移除該結構導向劑之後經歷其他步驟,諸如進一步煅燒步驟、蒸氣處理步驟、或脫鋁步驟中之至少一者。此等進一步處理步驟經常稱為「後處理」步驟。
在第五態樣中,本發明提供根據本發明第一或第二態樣之絲光沸石,或如本發明第三或第四態樣所製造之絲光沸石,用作吸附劑或觸媒的用途。
在第六態樣中,本發明提供一種將包含有機化合物之原料轉化成轉化產物的方法,其包含在有機化合物轉化條件下使該原料與根據本發明第一或第二態樣之包含絲光沸石的或如本發明第三或第四態樣之方法所製造之絲光沸石的觸媒接觸之步驟。在較佳實施態樣中,該方法
為轉烷基化方法,諸如C9 +芳族物之轉烷基化。
圖1A及1B分別顯示實施例1之絲光沸石的XRD及SEM。
圖2A及2B分別顯示實施例3之絲光沸石的XRD及SEM。
圖3A及3B分別顯示實施例4之絲光沸石的XRD及SEM。
圖4A及4B分別顯示實施例5之絲光沸石的XRD及SEM。
圖5A、5B及5C分別顯示實施例6之絲光沸石的XRD、SEM及TEM。
圖6A、6B及6C分別顯示實施例7之絲光沸石的XRD、SEM及TEM。
圖7A及7B分別顯示實施例10之絲光沸石的XRD及SEM。
圖8A、8B及8C分別顯示實施例12之絲光沸石的XRD、SEM及TEM。
圖9A及9B分別顯示實施例14之絲光沸石的XRD及SEM。
圖10顯示以TEM測量之實施例6(菱形)、實施例7(正方形)及實施例12(三角形)的絲光沸石之原生晶體大小分布。
圖11A及11B分別顯示實施例15之絲光沸石的XRD及SEM。
圖12A及12B分別顯示實施例16之絲光沸石的XRD及SEM。
本發明人已發現特別是藉由選擇合成混合物組成可能製造具有非常小晶體大小且具有高中孔表面積之絲光沸石。
該結構導向劑係選自由下列所組成之群組TEA、MTEA及其混合物。如本文所使用,「TEA」係指四乙銨陽離子,而「MTEA」係指甲基三乙銨陽離子。該等陽離子已知用作絲光沸石合成中的結構導向劑。較佳地,該結構導向劑為TEA。
根據本發明第一及第二態樣之絲光沸石的Si:Al2比較佳係大於10,及可在例如10至60,較佳為15至40之範圍。本發明第二態樣之經後處理的絲光沸石之Si:Al2比較佳係在40至300之範圍,更佳為60至150。
本發明第一及第二態樣之絲光沸石包含黏聚物,通常為不規則黏聚物。該黏聚物係由原生微晶體所構成,該原生微晶體之平均原生晶體大小以TEM測量為小於80nm,較佳係小於70nm,及更佳係小於60nm,例如小於50nm。該原生微晶體之平均原生晶體大小以TEM
測量可為例如大於20nm,隨意地大於30nm。
隨意地,本發明第一及第二態樣之絲光沸石的原生晶體之平均原生晶體大小為小於80nm,較佳係小於70nm,及在一些情況下為小於60nm,其以X射線繞射測量各在a、b及c晶體向量中。該原生微晶體可隨意地具有大於20nm,隨意地大於30nm之平均原生晶體大小,其以X射線繞射測量各在a、b及c晶體向量中。
本發明第一及第二態樣之絲光沸石通常包含原生晶體之黏聚物連同一些未黏聚之原生晶體的混合物。大部分絲光沸石,例如,大於80重量%或大於90重量%將作為原生晶體之黏聚物存在。該黏聚物通常為不規則形式。更多關於黏聚物之資訊請見Walter,D.(2013)Primary Particles-Agglomerates-Aggregates,in Nanomaterials(ed.Deutsche Forschungsgemeinschaft(DFG)),Wiley-VCH Verlag GmbH & Co.KGaA,德國Weinheim。doi:10.1002/9783527673919,第1-24頁。有用地,該絲光沸石並非聚集體。
隨意地,本發明第一及第二態樣之絲光沸石包含至少50重量%,較佳為至少70重量%,有利地為至少80重量%,更佳為至少90重量%及隨意地實質上由該不規則黏聚物組成,該不規則黏聚物係由原生晶體大小為小於80nm,較佳係小於70nm,及更佳係小於60nm,例如小於50nm之原生微晶體所構成。較佳地,本發明之絲光沸石包含少於10重量%之以TEM評估大小為大於
80nm的原生微晶體。較佳地,本發明之絲光沸石係由晶體大小TEM測量為小於80nm之微晶體所構成的該不規則黏聚物所構成。較佳地,以TEM評估,本發明之絲光沸石實質上不含,例如含有少於10%之數目的針狀或小板狀晶體。
較佳地,本發明第一及第二態樣之絲光沸石的原生微晶體之縱橫比小於3.0,更佳為小於2.0,其中該縱橫比係界定為微晶體之最長尺寸除以該微晶體之寬度,其中該微晶體之寬度係界定為在與該最長尺寸正交之方向中的最長尺寸中間之微晶體大小,此係以TEM測量。
該原生微晶體之黏聚物通常為不規則形式,且因其係由是為「原生」粒子之微晶體的黏聚物所形成,故可稱為「二次」粒子。
該原生微晶體可具有窄粒度分布,使至少90%數目之該原生微晶體的原生晶體大小在20至80nm之範圍,較佳係在20至60nm之範圍,以TEM測量。
根據本發明第一及第二態樣之絲光沸石以BET測量之中孔表面積係大於30m2/g,較佳係大於40m2/g,及在一些情況下係大於45m2/g。
根據本發明第一及第二態樣之絲光沸石之總表面積較佳係大於500m2/g,更佳係大於550m2/g,及在一些情況下係大於600m2/g。該總表面積包括內部孔之表面積(沸石表面積)以及在晶體外部上之表面積(外表面積)。該總表面積係以BET測量。
較佳地,根據本發明第一及第二態樣之絲光沸石的中孔表面積對總表面積之比係大於0.05。
根據本發明第一及第二態樣之絲光沸石之中孔體積較佳係大於0.1mL/g,更佳係大於0.12mL/g,及在一些情況下係大於0.15mL/g。
本發明第一態樣之絲光沸石可藉由本發明第三態樣之方法製造。將該合成混合物之組分組合且維持在結晶條件下。
適用之矽(Si)源包括矽石、矽石之膠態懸浮液、沉澱矽石、鹼金屬矽酸鹽,諸如矽酸鉀及矽酸鈉、正矽酸四烷酯、及焰製矽石,諸如Aerosil及Cabosil。較佳地,Si源為沉澱矽石,諸如Ultrasil(可得自Evonik Degussa)或HiSil(可得自PPG Industries)。
適用之鋁(Al)源包括硫酸鋁、硝酸鋁、氫氧化鋁、水合氧化鋁,諸如軟水鋁石、三水鋁石及/或假軟水鋁石、鋁酸鈉及其混合物。其他鋁源包括但不局限於其他水溶性鋁鹽、或烷氧化鋁,諸如異丙氧化鋁、或鋁金屬,諸如呈碎片形式之鋁。較佳地,該鋁源為鋁酸鈉,例如濃度在40至45%之範圍的鋁酸鈉的水溶液,或硫酸鋁,例如濃度在45至50範圍的硫酸鋁溶液。
前文提及之Si及Al來源的替代或除該等來源之外,鋁矽酸鹽亦可用作Si及Al二者之來源。
較佳地,合成混合物中之Si:Al2比係在15至40之範圍,更佳為20至30。
該合成混合物亦含有鹼金屬陽離子M+來源。該鹼金屬陽離子M+較佳係選自由下列所組成之群組:鈉、鉀及鈉和鉀陽離子的混合物。以鈉陽離子為佳。適用之鈉源可為例如鈉鹽,諸如NaCl、NaBr或NaNO3、氫氧化鈉或鋁酸鈉,較佳為氫氧化鈉或鋁酸鈉。適用之鋁源可為例如氫氧化鉀或鹵化鉀,諸如KCl或KBr、或硝酸鉀。較佳地,合成混合物中之M+:Si比係在0.15至0.32之範圍,更佳為0.20至0.32。隨意地,M+:Si比小於0.30。
該合成混合物亦含有氫氧離子源,例如鹼金屬氫氧化物,諸如氫氧化鈉或氫氧化鉀。氫氧化物亦可存在作為結構導向劑之相對離子或藉由使用氫氧化鋁作為Al源。較佳地,OH-:Si之範圍大於0.13,及可為例如在0.15至0.32之範圍,較佳為0.20至0.32。隨意地,OH-:Si比小於0.30。
該合成混合物隨意地包含種晶。該種晶可為任何適用之沸石種晶,諸如ZSM-5或ZSM-11或絲光沸石種晶。較佳地,該種晶為中孔絲光沸石晶體。該種晶之存在量可為例如該合成混合物的約0重量%至20重量%,特別是約0重量%至10重量%,較佳為0.01重量%至10重量%,諸如0.1重量%至5.0重量%。在較佳實施態樣中,該合成混合物包含種晶。
結構導向劑為TEA及/或MTEA,較佳為TEA,可以任何適用形式存在,例如作為鹵化物存在,但較佳係以其氫氧化物形式存在。該結構導向劑之適用來源
包括TEABr、TEAOH、MTEACl及MTEAOH。較佳結構導向劑來源為TEABr。較佳地,SDA:Si比係在0.005至0.10之範圍,更佳為0.02至0.10,尤其是0.02至0.05。
本發明人已發現該合成混合物中具有相對高固體含量有利於小晶體絲光沸石之合成。較佳地,H2O:Si比不大於20,例如,在5至20之範圍,較佳為5至17,尤其是10至17。
在本發明第三態樣中,合成混合物可例如具有以下表中所指示之莫耳比表示的組成:
結晶可在靜態或攪拌狀態下在適用反應容器(例如,聚丙烯罐或襯有Teflon®之熱壓器或不鏽鋼熱壓器)中進行。適用之結晶條件包括約100℃至約200℃之溫度,諸如約135℃至約160℃。較佳地,該溫度低於145℃。該合成混合物可保持在高溫下為時足以在所使用溫度令結晶發生之時間,例如約1天至約100天,隨意的為1至50天,例如約2天至約40天。在一些實例中,該合成混合物可維持在第一溫度為時1小時至10天的第一
期間,然後升高至第二較高溫度為時1小時至40天的期間。在結晶步驟之後,從液體分離出合成之晶體並回收之。
本發明第一態樣之絲光沸石之原合成形式通常具有以下莫耳關係之化學組成:mQ:nSiO2:Al2O3
其中0.001m/n0.1,例如,0.001m/n0.05,n為至少10,例如10至60,較佳為15至40,且Q為結構導向劑。
由於本發明第一態樣之原合成絲光沸石在其孔結構內含有結構導向劑,該產物通常在使用前以從該沸石至少部分移除該結構導向劑之有機部分(即,TEA及/或MTEA)的方式活化。
本發明之第二態樣的經煅燒絲光沸石隨意地藉由煅燒本發明第一態樣之絲光沸石以移除結構導向劑來製造。該絲光沸石亦可經歷離子交換步驟以使用其他陽離子置換存在於原合成產物中的鹼金屬離子或鹼土金屬離子。較佳之置換陽離子包括金屬離子、氫離子、氫前驅物,諸如銨離子及其混合物,更佳為氫離子或氫前驅物。例如,本發明第一態樣之絲光沸石可經歷離子交換步驟以使用銨陽離子置換鹼金屬離子或鹼土金屬離子,然後煅燒以將呈銨形式之絲光沸石轉化成呈氫形式之絲光沸石。在一實施態樣中,本發明第一態樣之絲光沸石首先經歷煅燒
步驟,有時稱為「初步煅燒」以從該絲光沸石之孔移除結構導向劑,接著進行離子交換處理,接著進行進一步煅燒步驟。然而,本發明人發現本發明之絲光沸石不一定需要初步煅燒步驟。在替代性實施態樣中,因此使本發明第一態樣之絲光沸石經歷離子交換處理而不經歷先前煅燒步驟(或初步煅燒),且在該離子交換處理之後,經煅燒以從孔移除結構導向劑,從而提供本發明第二態樣之經煅燒絲光沸石。
該離子交換步驟可涉及例如使該絲光沸石與水性離子交換溶液接觸。此種接觸可進行例如1至5次。與離子交換溶液接觸隨意地在周圍溫度進行,或者可在高溫下進行。例如,本發明第一態樣之沸石可藉由在室溫下與水性硝酸銨溶液接觸而離子交換,然後乾燥且煅燒。
適用之煅燒條件包括在至少約300℃,較佳為至少約370℃之溫度加熱至少約1分鐘,且通常不長於20小時,例如1小時至12小時期間。雖然低大氣壓可用於該熱處理,但基於方便性因素,希望其為大氣壓。該熱處理可在至高達約925℃之溫度進行。例如,該熱處理可在400℃至600℃,例如500℃至550℃之溫度,於含氧氣體存在下進行。
本發明第二態樣之經煅燒絲光沸石通常具有以下莫耳關係之化學組成:nSiO2:Al2O3
其中n為至少10,例如10至60,更特別為15至
40。
本發明第二態樣之經煅燒絲光沸石可在無進一步處理的情況下用作觸媒或吸附劑,或其可經歷後處理,諸如蒸氣處理及/或酸洗。
隨意地,本發明第二態樣之經煅燒沸石係在至少200℃之溫度,較佳為至少350℃,更佳為至少400℃,在一些實例中為至少500℃經歷蒸氣處理1至20小時期間,較佳為2至10小時。隨意地,該經蒸氣處理之沸石然後經歷以酸之水溶液的處理,該酸較佳為有機酸,諸如羧酸。草酸為較佳之酸。隨意地,該經蒸氣處理之沸石係在至少50℃之溫度,較佳為至少60℃,以酸之水溶液處理至少1小時期間,較佳為至少4小時,例如在5至20小時之範圍。
較佳地,該經後處理的絲光沸石具有以下莫耳關係之化學組成:nSiO2:Al2O3
其中n為至少50,更佳為至少70,在一些實例中為至少100。
本發明之絲光沸石可直接用作觸媒,或者可與一或多種其他組分(諸如黏合劑)化合。該絲光沸石可用作吸附劑或用作觸媒以催化廣泛之有機化合物轉化方法,包括許多現有的具有商業/工業重要性之轉化方法。烴進料之轉化可視所希望之方法類型而以任何合宜模式進行,例如流化床、移動床、固定床反應器。
本發明之絲光沸石於用作吸附或用作有機轉化方法中之觸媒時應至少部分地脫水。此係藉由在約100℃至約500℃之範圍的溫度,諸如約200℃至約370℃,於諸如空氣、氮等之氣氛中,且在大氣壓力、低大氣壓力或超大氣壓進行30分鐘至48小時。脫水亦可由在室溫下僅將該絲光沸石置於真空中而進行,但需要較長時間以獲得充分脫水。
本發明之絲光沸石可藉由與其他材料,諸如氫化組分、黏合劑及/或對完成之觸媒提供額外硬度或催化活性的基質材料組合而調配成觸媒組成物。該等其他材料可為惰性或催化活性材料。
當欲進行氫化-脫氫功能時,本文所述之絲光沸石可與氫化組分(諸如鎢、釩、鉬、錸、鎳、鈷、鉻、錳)或貴金屬(諸如鉑或鈀)緊密結合。此種組分可藉由以下方式併入該組成物中:共結晶、交換至該組成物中達IIIA族元素(例如鋁)存在該結構中之程度、浸入該組成物中或與該組成物緊密物理性混合。在鉑之情況下,此種組分可諸如例如藉由以含有鉑金屬離子之溶液處理該絲光沸石而浸入該絲光沸石中或浸於該絲光沸石上。如此,適當之用於本目的的鉑化合物包括氯鉑酸、氯化鉑(II)及各種含鉑胺錯合物之化合物。亦可使用金屬之組合及其引入方法。
如在許多觸媒之情況下,會希望在本發明絲光沸石中結合可抗有機轉化方法中所使用之溫度及其他條件的材料。此等材料包括活性與惰性材料與合成或天然沸
石,以及無機材料,諸如黏土、矽石及/或金屬氧化物,諸如氧化鋁。後者可為天然或呈凝膠狀沉澱物或包括矽石與金屬氧化物之凝膠的形式。合併使用一種活性材料與絲光沸石(即,與其結合或於該絲光沸石合成期間存在),有改變特定有機轉化方法中之轉化作用及/或觸媒的選擇性之傾向。不活性材料適於作為稀釋劑以控制給定方法之轉化的量,因此可以經濟且有序之方式獲得產物,而毋需使用控制反應速率的其他手段。此等材料可結合至天然黏土中,例如微晶高嶺土、膨土、變膨潤石及高嶺土,諸如慣常稱為Dixie、McNamee、Georgia及Florida黏土之高嶺土,或主要礦物組分為敘永石、高嶺石、珍珠陶土或富矽高嶺石的其他者,以改善該觸媒在商業操作條件下之抗壓碎強度。此等黏土可以原始開採的原態或在經歷酸處理或化學改質之後經歷進行煅燒的狀態使用。該等黏合劑材料係耐在各種烴轉化方法中發生的溫度及其他條件,例如機械磨耗。因此本發明之絲光沸石或的由本發明方法所製造之絲光沸石可以與黏合劑之擠出物形式使用。彼等通常藉由形成丸粒、球體或擠出物而結合。該擠出物經常藉由隨意地存在黏合劑下擠出該分子篩,乾燥及煅燒所得之擠出物而形成。
使用與本發明之絲光沸石或藉由本發明方法所製造之絲光沸石(即,與其結合或於該沸石合成期間存在)結合的材料在特定有機轉化方法中易於改變轉化率及/或該轉化的選擇性。不活性材料適於作為稀釋劑以控制給
定方法之轉化的量,因此可以經濟且有序之方式獲得產物,而毋需使用控制反應速率的其他手段。此等材料可結合至天然黏土,例如膨土與高嶺土,以改善商業操作條件下該觸媒的壓碎強度。
除了前述材料外,本發明之絲光沸石可與多孔基質材料複合,該材料係諸如矽石-氧化鋁、矽石-氧化鎂、矽石-氧化鋯、矽石-氧化釷、矽石-氧化鈹、矽石-氧化鈦以及三元組成物,諸如矽石-氧化鋁-氧化釷、矽石-氧化鋁-氧化鋯、矽石-氧化鋁-氧化鎂及矽石-氧化鎂-氧化鋯。
絲光沸石與無機氧化物基質的相對比例可非常廣泛,該絲光沸石含量從約1至約90重量百分比,特別是該複合物係製備成珠粒或擠出物形式時,更常在該複合物的約20至約80重量百分比範圍內。
以下實施例說明本發明。可能有眾多修改及變化,且應暸解在後附主張權項之範圍內,可以本文特別描述以外之方式實施本發明。
該平均一次粒徑及一次粒徑分布之測量係如下進行。拍攝數張沸石樣本的TEM照片,鑑別及測量原
粒子。就縱橫比大於1之各原粒子而言,最長尺寸係藉由在該粒子邊緣分隔得最遠的兩點畫一條線來鑑別。然後原粒子與該最長尺寸沿45°對角且通過該最長尺寸之中點的長度係測量為粒徑。各測量係藉由指派為涵蓋該樣本中所發現之粒徑範圍的約10個粒徑範圍其中之一來分組。測量超過300個原粒子然後繪製各粒徑範圍中之數目來顯示粒徑分布,例如圖10所示。例如,可使用中間值約187.5、250、312.5、375、437.5、500、562.5及625埃之粒徑範圍。在y軸上之晶體值百分比(%)係從以下計算:各群組中之粒子數/所測量之粒子數乘以100。平均粒徑係計算為根據分組結果的算術平均。
總BET及t-曲線微孔表面積係使用Micromeritics Tristar II 3020儀器在經煅燒之沸石粉末於350℃除氣4小時之後藉由氮吸附/去吸附測量。中孔表面積係藉由從總BET表面積扣除t-曲線微孔所獲得。中孔體積係從相同資料組導出。更多關於該方法之資訊可見例如"Characterization of Porous Solids and Powders:Surface Area,Pore Size and Density",S.Lowell等人,Springer,2004。
X射線繞射資料(粉末XRD或XRD)係以具有
VÅNTEC多通道偵測器之Bruker D4 Endeavor繞射系統使用銅K-α輻射收集。該繞射資料係藉由0.018度2θ之掃描模式(其中θ為Bragg角),且每一步使用約30秒之有效計數時間記錄。
a、b及c晶體向量中之晶體大小係根據X射線繞射圖案中之三個(200)、(020)及(002)峰使用Scherrer等式計算(P.Scherrer、N.G.W.Gottingen,Math-Pys.,2,第96-100頁(1918))。該方法及其於沸石之應用亦描述於A.W.Burton、K.Ong、T.Rea、I.Y.Chan,Microporous and Mesoporous Materials,117,第75-90頁(2009)。就本文所述之測量,使用Materials Data,Inc.之Jade第9.5.1版X射線繞射分析軟體進行該計算。
該α值係觸媒之裂解活性的度量,且係描述於美國專利第3,354.078號及Journal of Catalysis,第4卷,第527頁(1965);第6卷,第278頁(1966),及第61卷,第395頁(1980),各文獻資料係以引用方式併入本文中。此處所使用之試驗的實驗條件包括538℃之恆溫以及Journal of Catalysis第61卷,第395頁(1980)中詳細描述之可變流率。
混合物係從由1,030g之水、67g之TEABr(50%溶液)、212g之Ultrasil矽石、48.7g之鋁酸鈉溶液(45%)、及80g之50%氫氧化鈉溶液所製備。然後,將10g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-19.78
OH-/SiO2-0.402
Na+/SiO2-0.402
TEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以250RPM攪拌下於300℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖1A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖1B之該原合成材料的SEM顯示大型微晶體之混合形態的形態。原合成之晶體首先在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~17,表面積為612m2/g,且中孔表面積為13.7m2/g,己烷吸附為63.5mg/g,且α值為640。
混合物係從由1,000g之水、67g之TEABr(50%溶液)、212g之Ultrasil矽石、48.7g之鋁酸鈉溶液(45%)、及81g之50%氫氧化鈉溶液所製備。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-19.28
OH-/SiO2-0.406
Na+/SiO2-0.406
TEA/SiO2-0.049
該混合物在2公升熱壓器中,在以250RPM攪拌下於300℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。該原合成材料之XRD圖案顯示絲光沸石拓樸之典型純相。該原合成之材料的SEM顯示各種大小之微晶體的混合形態。該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~16,表面積為550m2/g,且中孔表面積為17m2/g,己烷吸附為77mg/g,且α值為1100。
混合物係從由1,030g之水、67g之TEABr
(50%溶液)、212g之Ultrasil矽石、48.7g之鋁酸鈉溶液(45%)、及65g之50%氫氧化鈉溶液所製備。然後,將10g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-19.62
OH-/SiO2-0.345
Na+/SiO2-0.345
TEA/SiO2-0.049
該混合物在2公升熱壓器中,在以250RPM攪拌下於300℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖2A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖2B之該原合成材料的SEM顯示各種大小之微晶體的混合形態。該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~19,表面積為609m2/g,且中孔表面積為30m2/g,己烷吸附為64.3mg/g,且α值為550。NaOH/SiO2比降至0.345導致較小晶體及增加之中孔表面積。
混合物係從由1,030g之水、67g之TEABr(50%溶液)、212g之Ultrasil矽石、48.7g之鋁酸鈉溶液(45%)、及51g之50%氫氧化鈉溶液所製備。然後,將10g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-19.48
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.049
該混合物在2公升熱壓器中,在以250RPM攪拌下於300℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖3A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖3B之該原合成材料的SEM顯示由比先前實施例更小且更均勻之微晶體形態所構成的不規則形黏聚物之形態。根據SEM,原生微晶體大小顯示小於80nm。該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為20.1,總表面積為618m2/g,,且中孔表面積為41m2/g,中孔體積為0.135mL/g,己烷吸附為57.9mg/g,且α值為960。所得之中孔表面積遠高於先前實施例;晶體大小亦較小且粒度分布較均勻。
該氫形式晶體係在650℃蒸氣處理4小時,然後在70℃經歷草酸酸洗約12小時。所得之經後處理絲光沸石晶體的SiO2/Al2O3莫耳比為306/1,總表面積為591m2/g,中孔表面積為54m2/g,中孔體積為0.19cc/g,己烷吸附為52.9mg/g,且α值為48。在經後處理之晶體上的XRD顯示具有良好結晶度之絲光沸石拓樸。
混合物係從由10,300g之水、670g之TEABr(50%溶液)、2,120g之Ultrasil矽石、487g之鋁酸鈉溶液(45%)、及510g之50%氫氧化鈉溶液所製備。然後,將20g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-19.48
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以250RPM攪拌下於300℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖4A之
該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖4B之該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~21,表面積為624m2/g,且中孔表面積為44m2/g,己烷吸附為61.8mg/g,且α值為780。
混合物係從由9,300g之水、804g之TEABr(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.10
H2O/SiO2-15.11
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(145℃)反應72小時。該產物係經過濾,
以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖5A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。原合成材料之SEM(圖5B)及TEM(圖5C)顯示由小型微晶體所構成的不規則形黏聚物之形態。拍攝關於該實施例之數張TEM照片並如上述用以測量一次粒徑及一次粒徑分布,且結果係顯示於圖10。
該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~21,表面積為637m2/g,且中孔表面積為56m2/g,己烷吸附為53.3mg/g,且α值為1200。
混合物係從由9,300g之水、804g之TEABr(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:
SiO2/Al2O3-26.10
H2O/SiO2-15.11
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.049
該混合物係在5加崙熱壓器中以350RPM攪拌,於250℉(120℃)反應36小時,然後提高至290℉(143℃)又36小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖6A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。SEM(圖6B)及TEM(圖6C)之原合成材料顯示由小型微晶體所構成的不規則形黏聚物之形態。拍攝關於該實施例之數張TEM照片並如上述用以測量一次粒徑及一次粒徑分布,且結果係顯示於圖10。以X射線繞射在a、b及c晶體向量中測量之平均原生晶體大小為55nm(200峰)、54nm(020峰)及40nm(002峰)。
該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~21.6,表面積為639m2/g,且中孔表面積為58.5m2/g,己烷吸附為54.9mg/g,且α值為900。該兩步驟溫度曲線形成較小晶體。
混合物係從由9,300g之水、804g之TEABr(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.10
H2O/SiO2-15.11
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.049
該混合物係在240℉(115℃)反應48小時,然後將溫度提高至280℉(138℃)又48小時,在5加崙熱壓器中以350RPM攪拌72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。該原合成材料之XRD圖案顯示絲光沸石拓樸之典型純相。該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。
該原合成之晶體係藉由在室溫及60℃與硝酸銨溶液離子交換三次且無在高溫之預煅燒,而轉化成氫形式,接著於250℉(120℃)乾燥且於1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~20.5,表面積為574m2/g,且中孔表面積為61m2/g,己烷吸附為59.3mg/g,且在室溫交換之樣本的α值為780
且表面積為621m2/g,且中孔表面積為62m2/g,己烷吸附為68mg/g,且於60℃之α值為1300。此實施例顯示小型中孔絲光沸石晶體可經離子交換而不需要在高溫預煅燒以移除或分解SDA。
混合物係從由9,300g之水、1,608g之TEABr(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.10
H2O/SiO2-15.69
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.098
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。該原合成材料之XRD圖案顯示絲光沸石拓樸之典型純相。該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。該原合成之晶體在1000℉於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著
於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~21.4,表面積為610m2/g,且中孔表面積為44m2/g,己烷吸附為58.6mg/g,且α值為1300。
混合物係從由9,300g之水、515g之TEABr(50%溶液)、2,798g之Ultrasil矽石、702g之鋁酸鈉溶液(43%)、及583g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-23.93
H2O/SiO2-13.64
OH-/SiO2-0.273
Na+/SiO2-0.273
TEA/SiO2-0.029
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖7A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖7B之該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。該原合成之晶體在1000℉於氮中預
煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~20,表面積為609m2/g,且中孔表面積為48.4m2/g,己烷吸附為52.3mg/g,且α值為750。
混合物係從由9,940g之水、189g之TEABr(50%溶液)、2,968g之Ultrasil矽石、682g之鋁酸鈉溶液(45%)、及714g之50%氫氧化鈉溶液所製備。然後,將20g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.08
H2O/SiO2-13.54
OH-/SiO2-0.291
Na+/SiO2-0.291
TEA/SiO2-0.010
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。該原合成材料之XRD圖案顯示絲光沸石拓樸之典型純相。該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80
nm。從該5加崙反應產生更均勻晶體大小及形態。該原合成之晶體在1000℉於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~19.5,表面積為530m2/g,且中孔表面積為47m2/g,己烷吸附為48.3mg/g,且α值為650。
混合物係從由9,350g之水、820g之TEABr(50%溶液)、2,544g之Ultrasil矽石、650g之鋁酸鈉溶液(45%)、及590g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-23.50
H2O/SiO2-15.23
OH-/SiO2-0.294
Na+/SiO2-0.294
TEA/SiO2-0.050
該混合物在5加崙熱壓器中,在以250RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖8A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純
相。該原合成材料的SEM(圖8B)及TEM(圖8C)顯示由小型微晶體所構成的不規則形黏聚物之形態。拍攝關於該實施例之數張TEM照片並如上述用以測量一次粒徑及一次粒徑分布,且結果係顯示於圖10。以X射線繞射在a、b及c晶體向量中測量之平均原生晶體大小為44nm(200峰)、51nm(020峰)及56nm(002峰)。
該原合成之晶體在1000℉於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~19,表面積為621m2/g,且中孔表面積為51m2/g,己烷吸附為57mg/g,且α值為1000。
混合物係從由9,300g之水、804g之TEABr(50%溶液)、2,544g之Ultrasil矽石、450g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合物具有以下莫耳組成:
SiO2/Al2O3-33.65
H2O/SiO2-15.01
OH-/SiO2-0.269
Na+/SiO2-0.269
TEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。該原合成材料之XRD圖案顯示絲光沸石拓樸之典型純相。該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。該原合成之晶體在1000℉於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~27,表面積為637m2/g,且中孔表面積為50.5m2/g,己烷吸附為56.7mg/g,且α值為1200。
混合物係從由9,680g之水、670g之氯化甲基三乙銨(97%溶液)、2,750g之Ultrasil矽石、583g之鋁酸鈉溶液(45%)、及649g之50%氫氧化鈉溶液所製備。然後,將30g之絲光沸石種晶添加至該混合物。該混合
物具有以下莫耳組成:SiO2/Al2O3-26.21
H2O/SiO2-14.02
OH-/SiO2-0.280
Na+/SiO2-0.280
MTEA/SiO2-0.050
該混合物在5加崙熱壓器中,在以350RPM攪拌下於290℉(150℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖9A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型純相。圖9B之該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。無預煅燒之原合成晶體係藉由在室溫下與硝酸銨溶液三次離子交換而轉化成氫形式,然後在250℉(120℃)乾燥,且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~22.4,表面積為640m2/g,且中孔表面積為54m2/g,己烷吸附為57.5mg/g,且α值為1100。此實施例顯示小型中孔絲光沸石晶體可使用MTEA作為結構導向劑製成,且該等晶體可經離子交換而未在高溫預煅燒。
混合物係從由9,300g之水、804g之TEABr
(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後將26g之ZSM-5種晶(Si/Al2~50/1)添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.10
H2O/SiO2-15.11
OH-/SiO2-0.291
Na+/SiO2-0.291
MTEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以350RPM攪拌下於280℉(137.8℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖11A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型相。該原合成材料的SEM(圖11B)顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。
該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~21.2,表面積為602m2/g,且中孔表面積為50m2/g,己烷吸附為59.4mg/g,且α值為1300。
混合物係從由9,300g之水、804g之TEABr(50%溶液)、2,544g之Ultrasil矽石、584g之鋁酸鈉溶液(45%)、及612g之50%氫氧化鈉溶液所製備。然後將130g之ZSM-5種晶(Si/Al2~50/1)添加至該混合物。該混合物具有以下莫耳組成:SiO2/Al2O3-26.10
H2O/SiO2-15.0
OH-/SiO2-0.291
Na+/SiO2-0.291
MTEA/SiO2-0.049
該混合物在5加崙熱壓器中,在以350RPM攪拌下於280℉(137.8℃)反應72小時。該產物係經過濾,以去離子(DI)水清洗,且於250℉(120℃)乾燥。圖12A之該原合成材料的XRD圖案顯示絲光沸石拓樸之典型相。圖12B之該原合成材料的SEM顯示由小型微晶體所構成的不規則形黏聚物之形態。根據SEM,平均原生微晶體大小顯示小於80nm。
該原合成之晶體在1000℉(540℃)於氮中預煅燒,然後藉由在室溫下與硝酸銨溶液離子交換三次轉化成氫形式,接著於250℉(120℃)乾燥且在1000℉(540℃)煅燒6小時。所得之絲光沸石晶體的SiO2/Al2O3莫耳比為~22.1,表面積為594m2/g,且中孔表面積為46m2/g,己烷吸附為63.8mg/g,且α值為1500。
將暸解可在後來由熟習本領域之人士進行其
中目前未預見或意料之外的替代方案、修改、變化或改良,且亦欲由下列主張權項包含。前述公開案之揭示係以全文引用方式併入本文中。前述公開案之適當組分及態樣的實施態樣中之現有材料及方法亦可經選擇。
Claims (14)
- 一種絲光沸石,其包含在其孔內之選自由下列所組成之群組的結構導向劑(SDA):TEA、MTEA及其混合物,該沸石之中孔表面積大於30m2/g且包含由原生微晶體所構成的黏聚物,其中該原生微晶體之平均原生晶體大小以TEM測量為小於80nm。
- 如申請專利範圍第1項之絲光沸石,其中以X射線繞射測量,該原生微晶體在a、b及c晶體向量各者中之平均原生晶體大小小於80nm。
- 如申請專利範圍第1項之絲光沸石,其中以TEM測量,至少90數目%之該原生微晶體的原生晶體大小小於80nm。
- 如申請專利範圍第1項之絲光沸石,其中以TEM測量,該原生微晶體之縱橫比小於2,其中該縱橫比係定義為該微晶體的最長尺寸除以該微晶體之寬度,其中該微晶體之寬度係定義為在該最長尺寸中間與該最長尺寸正交之尺寸中的該微晶體之尺寸。
- 如申請專利範圍第1項之絲光沸石,其具有之中孔表面積大於40m2/g。
- 如申請專利範圍第1項之絲光沸石,其中該中孔表面積對總表面積之比大於0.05。
- 一種經煅燒之絲光沸石,其係藉由對如申請專利範圍第1項之絲光沸石進行煅燒步驟而製造,該經煅燒之絲光沸石的中孔表面積大於30m2/g且包含由原生微晶體所構成的黏聚物,其中該原生微晶體之平均原生晶體大小以TEM測量為小於80nm。
- 如申請專利範圍第7項之經煅燒之絲光沸石,其中Si:Al2莫耳比大於或等於50。
- 如申請專利範圍第9項之方法,其中該矽源為沉澱矽石。
- 如申請專利範圍第9項之方法,其中該鋁源為鋁酸鈉溶液或硫酸鋁溶液。
- 如申請專利範圍第9項之方法,其中SDA源係選自由下列所組成之群組:溴化四乙銨(TEABr)、氫氧化四乙銨(TEAOH)、氯化甲基三乙銨(MTEACl)、氫氧化甲基三乙銨(MTEAOH)、及彼等混合物。
- 一種製造經煅燒之絲光沸石之方法,其包含下列步驟:i)對如申請專利範圍第1項之絲光沸石進行離子交換處理以移除鹼金屬陽離子M+,和然後ii)在等於或大於500℃之溫度煅燒該絲光沸石至少1小時之期間。
- 如申請專利範圍第13項之方法,其另外包括脫鋁步驟,該脫鋁步驟包含使該絲光沸石與蒸汽在至少200℃之溫度接觸至少1小時之持續期間,和然後以含水酸溶液清洗。
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TW201700167A (zh) | 2017-01-01 |
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US10118165B2 (en) | 2018-11-06 |
CN107206366A (zh) | 2017-09-26 |
US10058853B2 (en) | 2018-08-28 |
CN107206367A (zh) | 2017-09-26 |
US20160221896A1 (en) | 2016-08-04 |
US20160220987A1 (en) | 2016-08-04 |
CN107206367B (zh) | 2020-02-14 |
TW201900559A (zh) | 2019-01-01 |
TW201700404A (zh) | 2017-01-01 |
US10058854B2 (en) | 2018-08-28 |
US20180029025A1 (en) | 2018-02-01 |
TW201700166A (zh) | 2017-01-01 |
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