TWI639235B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI639235B
TWI639235B TW103115529A TW103115529A TWI639235B TW I639235 B TWI639235 B TW I639235B TW 103115529 A TW103115529 A TW 103115529A TW 103115529 A TW103115529 A TW 103115529A TW I639235 B TWI639235 B TW I639235B
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TW
Taiwan
Prior art keywords
film
oxide
insulating film
oxide semiconductor
semiconductor film
Prior art date
Application number
TW103115529A
Other languages
English (en)
Chinese (zh)
Other versions
TW201501314A (zh
Inventor
山崎舜平
三宅博之
岡崎健一
早川昌彥
松田慎平
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201501314A publication Critical patent/TW201501314A/zh
Application granted granted Critical
Publication of TWI639235B publication Critical patent/TWI639235B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW103115529A 2013-05-16 2014-04-30 半導體裝置 TWI639235B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013103716 2013-05-16
JP2013-103716 2013-05-16

Publications (2)

Publication Number Publication Date
TW201501314A TW201501314A (zh) 2015-01-01
TWI639235B true TWI639235B (zh) 2018-10-21

Family

ID=51895087

Family Applications (6)

Application Number Title Priority Date Filing Date
TW113143364A TW202535182A (zh) 2013-05-16 2014-04-30 半導體裝置
TW110129656A TWI809474B (zh) 2013-05-16 2014-04-30 半導體裝置
TW103115529A TWI639235B (zh) 2013-05-16 2014-04-30 半導體裝置
TW108142529A TWI809225B (zh) 2013-05-16 2014-04-30 半導體裝置
TW107126664A TWI679772B (zh) 2013-05-16 2014-04-30 半導體裝置
TW112126122A TW202414844A (zh) 2013-05-16 2014-04-30 半導體裝置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW113143364A TW202535182A (zh) 2013-05-16 2014-04-30 半導體裝置
TW110129656A TWI809474B (zh) 2013-05-16 2014-04-30 半導體裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW108142529A TWI809225B (zh) 2013-05-16 2014-04-30 半導體裝置
TW107126664A TWI679772B (zh) 2013-05-16 2014-04-30 半導體裝置
TW112126122A TW202414844A (zh) 2013-05-16 2014-04-30 半導體裝置

Country Status (4)

Country Link
US (1) US9437741B2 (enExample)
JP (1) JP6407558B2 (enExample)
KR (8) KR102220810B1 (enExample)
TW (6) TW202535182A (enExample)

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US9853053B2 (en) 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9766517B2 (en) * 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
CN107112049A (zh) 2014-12-23 2017-08-29 3B技术公司 采用薄膜晶体管的三维集成电路
JP6758844B2 (ja) * 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104934442B (zh) * 2015-04-30 2018-02-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板及显示装置
US9837547B2 (en) * 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
CN104992925B (zh) * 2015-07-13 2019-02-22 合肥鑫晟光电科技有限公司 导电过孔结构、阵列基板和显示装置的制作方法
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
KR102465559B1 (ko) * 2015-12-28 2022-11-11 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
CN106653814B (zh) * 2016-12-28 2020-02-14 上海天马微电子有限公司 一种阵列基板、显示面板与显示装置
US11004961B2 (en) 2017-03-13 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN107369716B (zh) * 2017-07-17 2021-02-12 京东方科技集团股份有限公司 薄膜晶体管及制作方法、显示装置
US11152513B2 (en) * 2017-09-05 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7048292B2 (ja) * 2017-12-14 2022-04-05 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP7472100B2 (ja) * 2019-03-15 2024-04-22 株式会社半導体エネルギー研究所 半導体装置
US11444025B2 (en) * 2020-06-18 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and fabrication method thereof
US11695037B2 (en) * 2021-01-12 2023-07-04 Win Semiconductors Corp. Semiconductor structure

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