JP6407558B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6407558B2
JP6407558B2 JP2014099394A JP2014099394A JP6407558B2 JP 6407558 B2 JP6407558 B2 JP 6407558B2 JP 2014099394 A JP2014099394 A JP 2014099394A JP 2014099394 A JP2014099394 A JP 2014099394A JP 6407558 B2 JP6407558 B2 JP 6407558B2
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Prior art keywords
film
oxide semiconductor
oxide
semiconductor film
insulating film
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Japanese (ja)
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JP2014241403A5 (enExample
JP2014241403A (ja
Inventor
山崎　舜平
舜平 山崎
三宅　博之
博之 三宅
岡崎　健一
健一 岡崎
早川　昌彦
昌彦 早川
慎平 松田
慎平 松田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2014241403A5 publication Critical patent/JP2014241403A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014099394A 2013-05-16 2014-05-13 半導体装置 Active JP6407558B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014099394A JP6407558B2 (ja) 2013-05-16 2014-05-13 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013103716 2013-05-16
JP2013103716 2013-05-16
JP2014099394A JP6407558B2 (ja) 2013-05-16 2014-05-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2014241403A JP2014241403A (ja) 2014-12-25
JP2014241403A5 JP2014241403A5 (enExample) 2017-06-22
JP6407558B2 true JP6407558B2 (ja) 2018-10-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014099394A Active JP6407558B2 (ja) 2013-05-16 2014-05-13 半導体装置

Country Status (4)

Country Link
US (1) US9437741B2 (enExample)
JP (1) JP6407558B2 (enExample)
KR (8) KR102220810B1 (enExample)
TW (6) TW202535182A (enExample)

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JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
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JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9766517B2 (en) * 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
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JP6758844B2 (ja) * 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104934442B (zh) * 2015-04-30 2018-02-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板及显示装置
US9837547B2 (en) * 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
CN104992925B (zh) * 2015-07-13 2019-02-22 合肥鑫晟光电科技有限公司 导电过孔结构、阵列基板和显示装置的制作方法
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
KR102465559B1 (ko) * 2015-12-28 2022-11-11 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
CN106653814B (zh) * 2016-12-28 2020-02-14 上海天马微电子有限公司 一种阵列基板、显示面板与显示装置
US11004961B2 (en) 2017-03-13 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN107369716B (zh) * 2017-07-17 2021-02-12 京东方科技集团股份有限公司 薄膜晶体管及制作方法、显示装置
US11152513B2 (en) * 2017-09-05 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7048292B2 (ja) * 2017-12-14 2022-04-05 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP7472100B2 (ja) * 2019-03-15 2024-04-22 株式会社半導体エネルギー研究所 半導体装置
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