TWI619214B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI619214B
TWI619214B TW103125676A TW103125676A TWI619214B TW I619214 B TWI619214 B TW I619214B TW 103125676 A TW103125676 A TW 103125676A TW 103125676 A TW103125676 A TW 103125676A TW I619214 B TWI619214 B TW I619214B
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Taiwan
Prior art keywords
insulating layer
expansion coefficient
linear expansion
semiconductor device
wiring
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TW103125676A
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English (en)
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TW201519392A (zh
Inventor
Yoshikazu Shimote
Shinji Baba
Toshihiro Iwasaki
Kazuyuki Nakagawa
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Renesas Electronics Corp
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Publication of TW201519392A publication Critical patent/TW201519392A/zh
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Publication of TWI619214B publication Critical patent/TWI619214B/zh

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Abstract

一實施形態的半導體裝置(SP1)是在配線基板2的基材層(2CR)與半導體晶片(3)之間層疊有：與基材層密著的防焊膜(solder resist)(第1絕緣層，SR1)，與防焊膜及半導體晶片密著的樹脂體(第2絕緣層，4)。並且，防焊膜的線膨脹係數是基材層的線膨脹係數以上，防焊膜的線膨脹係數是樹脂體的線膨脹係數以下，且基材層的線膨脹係數是比樹脂體的線膨脹係數更小。藉由上述構成，抑制起因於溫度循環負荷之半導體裝置的損傷，能夠使可靠度提升。

Description

半導體裝置及其製造方法
本發明是有關例如在配線基板的防焊膜上經由樹脂體來搭載半導體晶片的半導體裝置及其製造方法。
在日本特開2013-12648號公報(專利文獻1)中記載在配線基板的防焊膜上經由底部填充樹脂來搭載半導體晶片的半導體裝置及其製造方法。在專利文獻1中記載在從防焊膜露出的焊接引線的窄寬部上配置突起電極而經由焊錫材來連接的情形。
並且，在日本特開2000-77471號公報(專利文獻2)中記載在從防焊膜露出的焊接引線(導體圖案)的寬度大的部分配置突起電極(凸塊)而經由焊錫材來連接的情形。
並且，在日本特開2007-266136號公報(專利文獻3)中記載分別在形成於配線基板的上面及下面之防焊層中含有玻璃布，藉此強化配線基板的力學性的強度。
[先行技術文獻] [專利文獻]
[專利文獻1]日本特開2013-12648號公報
[專利文獻2]日本特開2000-77471號公報
[專利文獻3]日本特開2007-266136號公報
例如上述專利文獻1的圖2所示般，BGA(Ball Grid Array)型的半導體裝置是以配線基板，及搭載於此配線基板上的半導體晶片，及保護(或固定)此半導體晶片的樹脂體等所構成。並且，搭載有半導體晶片的配線基板是具備：基材層，及形成於此基材層的表背面的配線層，及覆蓋此配線層的防焊膜。
如此，1個的半導體裝置是以複數種的材料所構成。並且，各材料的熱膨脹率也為各式各樣。換言之，各材料的熱膨脹率是不限於彼此相同。
因此，一旦重複溫度上昇，溫度降低的溫度循環負荷被施加於如此的半導體裝置，則會在構成半導體裝置的各材料的連接界面等產生應力，成為半導體裝置的可靠度降低的原因。
其他的課題及新穎的特徵是由本說明書的記述及附圖可明確得知。
一實施形態的半導體裝置是在配線基板的基材層與半導體晶片之間層疊有：與上述基材層密著的第1絕緣層，與上述第1絕緣層及上述半導體晶片密著的第2絕緣層。並且，上述第1絕緣層的線膨脹係數為上述基材層的線膨脹係數以上，上述第1絕緣層的線膨脹係數為上述第2絕緣層的線膨脹係數以下，且上述基材層的線膨脹係數是比上述第2絕緣層的線膨脹係數更小。
若根據上述一實施形態，則可使半導體裝置的可靠度提升。
2、2A‧‧‧配線基板
2a‧‧‧上面(面、主面、晶片搭載面)
2A‧‧‧配線基板
2b‧‧‧下面(面、主面、安裝面)
2BF‧‧‧接合指(端子、電極、內部介面端子、接合焊墊)
2BU1、2BU2‧‧‧增層層(基材層)
2BU1a‧‧‧上面
2BU2b‧‧‧下面
2CR‧‧‧基材層(核心層、絕緣層)
2CRa‧‧‧第1面、主面、接合指形成面)
2CRb‧‧‧第2面、主面、接端面形成面)
2LD‧‧‧複數的接端面(端子、電極、外部介面端子、外部端子)
2s‧‧‧側面
2TW‧‧‧通孔配線
2VA‧‧‧通孔配線
3‧‧‧半導體晶片
3a‧‧‧表面(主面、上面)
3b‧‧‧背面(主面、下面)
3BP‧‧‧突起電極(導電性構件、柱凸塊、柱形凸塊、焊錫凸塊)
3BPs‧‧‧柱形凸塊
3F、3F1、3F2‧‧‧絕緣膜
3Fk‧‧‧開口部
3PD‧‧‧焊墊(接合焊墊、電極、電極焊墊)
3RD‧‧‧再配線
3s‧‧‧側面
3UB‧‧‧底層金屬膜(底部凸塊金屬)
4‧‧‧樹脂體(絕緣層、底部填充材、密封材、黏著材、黏晶材)
4p‧‧‧樹脂
5‧‧‧密封體(樹脂體)
20‧‧‧配線基板(取多數個基板)
20a‧‧‧製品形成領域
20b‧‧‧框部(框體)
20c‧‧‧切割線(切割領域)
BF1‧‧‧結合部(接合部)
BF2、BF3‧‧‧配線部
BFt‧‧‧前端面(前端邊)
BPt‧‧‧前端面
BW‧‧‧接線(導電性構件、金屬線)
CLK1‧‧‧龜裂
DCb‧‧‧切割刀(旋轉刀)
DCd‧‧‧治具
FP‧‧‧變曲點
GC‧‧‧玻璃纖維(纖維材料)
H1‧‧‧半導體裝置
MS‧‧‧遮罩
MSh‧‧‧貫通孔(開口部)
NZ1‧‧‧在外側樹脂供給用的噴嘴
PK1‧‧‧半導體裝置
SB‧‧‧焊錫球(焊錫材、外部端子、電極、外部電極)
SD1、SD2、SD3‧‧‧焊錫材
Sk1、Sk2‧‧‧開口部
SP1、SP2、SP3、SP4、SP5、SP6、SP7、SP8、SP9、SP10、H1‧‧‧半導體裝置(半導體封裝)
SR1、SR2、SRh‧‧‧防焊膜(絕緣層)
ST1、ST2、ST3、ST4‧‧‧箭號(拉伸力)
W1、W2‧‧‧寬度(長度)
WH‧‧‧晶圓(半導體晶圓)
WHa‧‧‧晶片領域(裝置領域)
WHb‧‧‧切割道(切割領域)
圖1是表示一實施形態的半導體裝置的晶片搭載面側的全體構造的平面圖。
圖2是表示圖1所示的半導體裝置的安裝面(相反面)側的平面圖。
圖3是沿著圖1的A-A線的剖面圖。
圖4是去掉圖1所示的半導體晶片及樹脂體，顯示配線基板的晶片搭載面側的平面圖。
圖5是圖1所示的半導體晶片的表面(與配線基板的對向面)側的平面圖。
圖6是電性連接圖3所示的半導體晶片與配線基板的部分的擴大剖面圖。
圖7是對應於圖6所示的剖面的擴大平面圖。
圖8是表示利用圖1~圖7來說明的半導體裝置的製造工程的概要說明圖。
圖9是表示在圖8所示的基板準備工程所準備的配線基板的全體構造的平面圖。
圖10是沿著圖9的A-A線的擴大剖面圖。
圖11是表示在圖8所示的晶圓準備工程所準備的半導體晶圓的平面圖。
圖12是表示形成於圖11所示的半導體晶圓的一個晶片領域之焊墊的周邊的擴大剖面圖。
圖13是表示在圖12所示的複數的焊墊上形成底層金屬膜及突起電極的狀態的擴大剖面圖。
圖14是表示在圖13所示的突起電極的前端面上安裝焊錫材的狀態的擴大剖面圖。
圖15是表示去掉圖14所示的遮罩的狀態的擴大剖面圖。
圖16是表示將圖15所示的焊錫材加熱，而使圓頂形狀變形的狀態的擴大剖面圖。
圖17是表示在圖12所示的配線基板上搭載半導體晶片的狀態的擴大剖面圖。
圖18是表示在配線基板上配置半導體晶片時的突起電極與端子的平面的位置關係的擴大平面圖。
圖19是沿著圖18的A-A線的擴大剖面圖。
圖20是表示圖19所示的焊錫材一體化的狀態的擴大 剖面圖。
圖21是表示在圖17所示的半導體晶片與配線基板之間供給底部填充樹脂的狀態的擴大剖面圖。
圖22是表示在圖21所示的配線基板的複數的接端面上接合焊錫球的狀態的擴大剖面圖。
圖23是表示在圖8所示的小片化工程中，將取多數個的配線基板小片化的狀態的剖面圖。
圖24是表示相對於圖6所示的半導體裝置之變形例的擴大剖面圖。
圖25是表示相對於圖6所示的半導體裝置之其他的變形例的擴大剖面圖。
圖26是表示相對於圖7所示的半導體裝置之變形例的擴大平面圖。
圖27是表示相對於圖3所示的半導體裝置之變形例的擴大平面圖。
圖28是電性連接圖27所示的半導體晶片與配線基板的部分的擴大剖面圖。
圖29是表示相對於圖7所示的半導體裝置的其他的變形例的擴大剖面圖。
圖30是表示相對於圖7所示的半導體裝置的其他變形例的擴大剖面圖。
圖31是表示相對於圖6所示的半導體裝置的其他變形例的擴大剖面圖。
圖32是表示相對於圖6所示的半導體裝置的其他變 形例的擴大剖面圖。
圖33是表示相對於圖3所示的半導體裝置的其他變形例的擴大剖面圖。
圖34是相對於圖6的比較例之半導體裝置的擴大剖面圖。
(本案的記載形式．基本的用語．用法的說明)
在本案中，實施形態的記載是因應所需，基於方便起見分成複數的區段等來記載，但除特別明示非如此時，該等不是相互獨立個別者，不論記載的前後，單一的例子的各部分，一方為另一方的一部分詳細或一部分或全部的變形例等。並且，原則上，同樣的部分是省略重複的說明。並且，實施形態的各構成要素是非必須者，除特別明示非如此時及理論上限於該數量時以及由文章的前後明顯非如此時。
同樣在實施形態等的記載中，有關材料，組成等，「由A所構成的X」等也不是排除包含A以外的要素者，除特別明示非如此時及由文章的前後明顯非如此時。例如，針對成分而言，是「以A為主要的成分而含的X」等的意思。例如，即使為「矽構件」等，也非限於純粹的矽者，當然也包括SiGe(矽．鍺)合金或其他以矽為主要成分的多元合金，含其他的添加物等的構件者。並且，即使為鍍金，Cu層，鍍鎳等也不只是純粹者，包含分別以 金，Cu，鎳等為主要成分的構件者，除特別明示非如此時。
而且，言及特定的數值，數量時，也可為超過其特定的數值的數值，或該特定的數值未滿的數值，除特別明示非如此時及理論上限於該數量時以及由文章的前後明顯非如此時。
並且，在實施形態的各圖中，同一或同樣的部分是以同一或類似的記號或參照號碼來表示，原則上說明是不重複。
並且，在本案中，有時使用上面或下面的用語，但由於在半導體封裝的安裝形態中存在各種的形態，因此在安裝半導體封裝之後，例如也會有時上面比下面更配置於下方。本案是將半導體晶片的元件形成面側的平面記載為表面，將表面的相反側的面記載為背面。並且，將配線基板的晶片搭載面側的平面記載為上面或表面，將位於上面的相反側的面記載為下面。
並且，在附圖中，反而形成繁雜的情況或與空隙的區別為明確的情況，即使是剖面也會有時省略剖面線等。有關於此，由說明等可明確得知的情況等，即使是平面性關閉的孔也會有時省略背景的輪廓線。而且，即使不是剖面，為了明示非空隙，或為了明示領域的境界，而有附上剖面線或點圖案的情形。
<半導體裝置>
首先，利用圖1~圖5來說明有關本實施形態的半導體裝置SP1的概要構成。圖1是表示本實施形態的半導體裝置的晶片搭載面側的全體構造的平面圖。又，圖2是表示圖1所示的半導體裝置的安裝面(相反面)側的平面圖。又，圖3是沿著圖1的A-A線的剖面圖。又，圖4是去掉圖1所示的半導體晶片及樹脂體，顯示配線基板的晶片搭載面側的平面圖。又，圖5是表示圖1所示的半導體晶片的表面(與配線基板的對向面)側的平面圖。
另外，在圖2~圖5中，為了容易看，而減少端子數，比在以下說明的數值例更擴大顯示。端子(焊墊3PD或接合指(bonding finger)2BF，或焊錫球SB等)的數量並非限於圖2~圖5所示的形態。例如，焊墊3PD，接合指2BF，焊錫球SB等的端子的數量是可分別適用在100個~10,000個程度的半導體裝置。並且，在圖5中，為了顯示焊墊3PD及突起電極3BP的平面視的構造，而擴大複數的焊墊3PD之中的2個部分的部分擴大平面圖也一併顯示。
本實施形態的半導體裝置SP1是具有：配線基板2，搭載於配線基板2上的半導體晶片3(參照圖1，圖3)，及形成於配線基板2與半導體晶片3之間的樹脂體(絕緣層，底部填充材，密封材，黏著材，黏晶材)4。
如圖3所示般，配線基板2是具有：搭載半導體晶片3的上面(面，主面，晶片搭載面)2a，與上面2a相反側的下面(面，主面，安裝面)2b，及配置於上面2a與下 面2b之間的側面2s(參照圖1~圖3)，如圖2及圖3所示般，平面視形成四角形的外形形狀。就圖1及圖2所示的例子而言，配線基板2的平面大小(平面視的尺寸，上面2a及下面2b的尺寸，外形大小)是例如形成一邊的長度為12mm~60mm程度的四角形。並且，配線基板2的厚度(高度)，亦即，圖4所示從上面2a到下面2b的距離是例如0.3mm~1.3mm程度。
配線基板2是用以電性連接搭載於上面2a側的半導體晶片3與未圖示的安裝基板之載板(interposer)，具有電性連接晶片搭載面即上面2a側與安裝面即下面2b側之複數的配線層(圖2所示的例子是2層)。配線基板2是具有上面(面，第1面，主面，接合指形成面)2CRa及位於上面2CRa的相反側的下面(面，第2面，主面，接端面形成面)2CRb，例如具備使樹脂含浸於玻璃纖維(纖維材料)的預浸料所構成的基材層(核心層，絕緣層)2CR。在基材層2CR的上面2CRa及下面2CRb是分別形成有配線層。
在形成於基材層2CR的上面2CRa之配線層是形成有複數的導體圖案，在此導體圖案中，如圖3所示般含有用以電性連接半導體晶片3與配線基板2的端子之複數的接合指(端子，電極，內部介面端子)2BF。接合指2BF的詳細構造是在往後敘述。並且，在形成於基材層2CR的下面2CRb之配線層是形成有複數的導體圖案，在此導體圖案中，如圖3所示般含有連接半導體裝置SP1的外部端 子即複數的焊錫球SB之端子即複數的接端面(端子，電極，外部介面端子，外部端子)2LD。
接合指2BF或接端面2LD等的導體圖案是例如藉由電鍍法來形成的金屬膜，例如使用以銅(Cu)為主體的金屬所構成。並且，接合指2BF或接端面2LD等的導體圖案的厚度(膜厚)是例如5μm~30μm程度。
另外，在圖2中，為了容易理解說明本案的技術思想，而使配線層構造單純化，舉2層構造的配線基板2來進行說明，但配線層的數目並非限於2層，例如亦可為3層以上。有關具有3層以上的配線層的配線基板的變形例是在往後敘述。
並且，在基材層2CR的上面2CRa是形成有含樹脂的絕緣層即防焊膜(絕緣層)SR1，上面2CRa的大部分是被防焊膜SR1所覆蓋。並且，如圖4所示般，在防焊膜SR1是形成有開口部Sk1，在開口部Sk1中，複數的接合指2BF的各一部分會從防焊膜SR1露出。就圖4所示的例子而言，開口部Sk1是跨越複數的接合指2BF形成。換言之，複數的接合指2BF的各一部分是在一個的開口部Sk1中一起從防焊膜SR1露出。
並且，在基材層2CR的下面2CRb是形成有含樹脂的絕緣層即防焊膜(絕緣層)SR2，下面2CRb的大部分是被防焊膜SR2所覆蓋。並且，如圖3所示般，在防焊膜SR2是形成有複數的開口部Sk2，在開口部Sk2中，複數的接端面2LD的各一部分會從防焊膜SR2露出。就圖3 所示的例子而言，開口部Sk2是各對應於複數的接端面2LD而形成。換言之，在複數的接合指2BF是分別個別地形成有開口部Sk2，在複數的開口部Sk2中複數的接合指2BF會分別從防焊膜SR2露出。
防焊膜SR1及防焊膜SR2的詳細的構造是在往後敘述，就本實施形態而言，防焊膜SR1及防焊膜SR2是分別使複數的填料粒子(filler particle)及樹脂含浸於玻璃纖維而形成。並且，防焊膜SR1及防焊膜SR2的厚度(膜厚)是覆蓋導體圖案的部分的厚度形成5μm~35μm程度。
並且，基材層2CR的上面2CRa側的配線層與下面2CRb側的配線層是經由分別形成於複數的貫通孔(通孔(Through-hole))內的複數的通孔配線2TW來互相且電性連接，該複數的貫通孔是設成從上面2CRa及下面2CRb的其中一方貫通至另一方。通孔配線2TW是例如藉由電鍍法來形成，與接合指2BF或接端面2LD等的導體圖案同樣，例如以銅(Cu)為主體的金屬所構成。
並且，就圖3所示的例子而言，在複數的接端面2LD分別連接焊錫球(焊錫材，外部端子，電極，外部電極)SB。焊錫球SB是在將半導體裝置SP1安裝於未圖示的安裝基板時，為電性連接安裝基板側的複數的端子(圖示省略)與複數的接端面2LD之導電性構件。換言之，焊錫球SB是半導體裝置SP1的外部端子。
焊錫球SB是例如由放入鉛(Pb)的Sn-Pb焊錫材或 實質不含Pb之所謂無鉛焊錫構成的焊錫材。作為無鉛焊錫的例子，例如可舉錫(Sn)，或錫-鉍(Sn-Bi)，或錫-銅-銀(Sn-Cu-Ag)，錫-銅(Sn-Cu)等。在此，所謂無鉛焊錫是意思鉛(Pb)的含量為0.1wt%以下者，此含量是定為RoHS(Restriction of Hazardous Substances)指令的基準。
並且，如圖2所示般，複數的焊錫球SB是配置成行列狀(陣列狀，矩陣狀)。換言之，複數的焊錫球SB是沿著配線基板2的下面2b的邊且接連複數列配置。並且，接合複數的焊錫球SB之複數的接端面2LD也配置成行列狀(矩陣狀)。將如此複數的外部端子(焊錫球SB，接端面2LD)行列狀地配置於配線基板2的安裝面側的半導體裝置稱為區域陣列型的半導體裝置。區域陣列型的半導體裝置是可有效活用配線基板2的安裝面(下面2b)側作為外部端子的配置空間，因此即使外部端子數增多，還是可抑制半導體裝置的安裝面積的增大的點為理想。亦即，可省空間安裝隨高機能化，高集成化而外部端子數增多的半導體裝置。
又，如圖1及圖3所示般，半導體裝置SP1是具有搭載於配線基板2上的半導體晶片3。半導體晶片3是具備表面(主面，上面)3a(參照圖3)，與表面3a相反側的背面(主面，下面)3b，及位於表面3a與背面3b之間的側面3s。又，如圖1所示般，半導體晶片3是以平面視比配線基板2更平面積小的四角形的外形形狀所形成。就圖 1所示的例子而言，半導體晶片3是以四個的側面3s會各分別沿著配線基板2的四個的側面2s延伸之方式搭載於配線基板2的上面2a的中央部。
又，如圖5所示般，半導體晶片3是具備形成於表面3a側的複數的焊墊(接合焊墊)3PD。就圖5所示的例子而言，複數的焊墊3PD是沿著表面3a的周緣部且表面3a的各邊(沿著側面3s)形成。並且，就圖3所示的例子而言，半導體晶片3是在表面3a側與配線基板2的上面2a側對向的狀態下，經由複數的突起電極3BP來搭載於配線基板2上。如此的搭載方式是稱為面朝下安裝方式，或覆晶連接方式。
半導體晶片3(詳細是半導體晶片3的基材即半導體基板)是例如由矽(Si)所形成。並且，在表面3a是形成有覆蓋半導體晶片3的基材及配線的絕緣膜3F，在絕緣膜3F是形成有複數的開口部3Fk。複數的焊墊3PD的各表面是在形成於該絕緣膜3F的開口部3Fk中，從絕緣膜3F露出。並且，複數的焊墊3PD是分別由金屬所構成，本實施形態是例如由鋁(Al)所構成。
又，如圖3及圖5所示般，在複數的焊墊3PD分別連接突起電極(導電性構件)3BP。半導體晶片3的複數的焊墊3PD與配線基板2的複數的接合指2BF是經由複數的突起電極3BP來分別互相且電性連接。突起電極3BP是以能夠突出於半導體晶片3的表面3a上之方式形成的金屬構件。換言之，突起電極3BP是用以電性連接形成於 半導體晶片3的電路與配線基板的接合指2BF之導電性構件。
可舉例說明以下那樣的構成，作為突起電極3BP。例如，可利用在由銅(Cu)或鎳(Ni)所構成的導體柱的前端面形成有焊錫膜的柱凸塊(pillar bump)(柱狀電極)作為突起電極3BP。又，例如，可利用溶融後的金屬會利用球接合技術來接合於焊墊3PD的柱形凸塊(Stud bump)作為突起電極3BP。又，例如，可利用使用焊錫材本身作為突起電極3BP的焊錫凸塊作為突起電極3BP。本實施形態是舉突起電極3BP為柱凸塊的情況進行說明，作為代表例。
又，如圖3所示般，在半導體晶片3與配線基板2之間是配置有樹脂體4。樹脂體4是以能夠堵塞半導體晶片3的表面3a與配線基板2的上面2a之間的空間的方式配置。換言之，樹脂體4是密著於配線基板2的防焊膜SR1及半導體晶片3的表面3a的兩方。
並且，樹脂體4是由絕緣性(非導電性)的材料所形成，以能夠密封電性連接半導體晶片3與配線基板2的部分(複數的突起電極3BP的接合部)之方式配置。如此，以能夠密封複數的突起電極3BP的接合部之方式配置樹脂體4之下，可保護半導體晶片3與配線基板2的電性連接部分。並且，在樹脂體4密著於配線基板2及半導體晶片3之下，可使產生於突起電極3BP的連接部分的應力分散。樹脂體4是例如在環氧系的樹脂中混合矽石(SiO2) 等的填料粒子，使熱硬化而形成。
<半導體晶片與配線基板之間的構造的詳細>
其次，說明有關圖3所示的半導體晶片3與配線基板2之間的構造的詳細。圖6是電性連接圖3所示的半導體晶片與配線基板之部分的擴大剖面圖。又，圖34是相對於圖6的比較例之半導體裝置的擴大剖面圖。又，圖7是對應於圖6所示的剖面之擴大平面圖。另外，在圖7中，為了容易了解圖6所示的突起電極3BP與接合指2BF的平面視之位置關係，而省略圖6所示的半導體晶片3及樹脂體4的圖示。並且，在圖7中，突起電極3BP及焊錫材SD1是附上二點虛線來顯示。
如圖6所示般，配線基板2的端子即接合指2BF是被形成於基材層2CR的上面2CRa。並且，在基材層2CR的上面2CRa上是形成有防焊膜SR1，接合指2BF的一部分(形成於開口部Sk1的外部的部分)是以防焊膜SR1所覆蓋。並且，接合指2BF之中，形成於防焊膜SR1的開口部Sk1內的部分是從防焊膜SR1露出。
換言之，如圖7所示般，複數的接合指2BF是分別具有連接突起電極3BP的部分即結合(bond)部BF1。結合部BF1是形成於開口部Sk1內，從防焊膜SR1露出。並且，複數的接合指2BF是分別具有連接至結合部BF1的配線部BF2。配線部BF2是從與結合部BF1的連接部分朝防焊膜SR1延伸。並且，配線部BF2的一部分是形成 於開口部Sk1的外側，以防焊膜SR1所覆蓋。
並且，在本實施形態中，配線部BF2是被連結至結合部BF1的一方的側面，在其相反側的側面是配線部BF2未被連接。亦即，結合部BF1是在連接配線部BF2的側面的相反側具有接合指2BF的前端面(前端邊)BFt。
並且，在圖7所示的例子中，結合部BF1的平面形狀是四角形，特別詳細是形成長方形。相當於結合部BF1的寬度W1之短邊方向的長度是例如10μm~40μm程度。並且，結合部BF1的長邊方向的長度是例如50μm~70μm程度。並且，在圖7所示的例子中，配線部BF2的寬度W2是比結合部BF1的寬度W1更小，例如5μm~40μm程度。但，相對於圖7的變形例，亦有時使結合部BF1的寬度W1與配線部BF2的寬度W2形成同值。而且，亦有時使配線部BF2的寬度W2形成比結合部BF1的寬度W1更大的值。
並且，半導體晶片3的電極即焊墊3PD是形成於半導體晶片3的表面3a側。詳細是半導體晶片3具有被層疊於表面3a側的複數的配線層，在複數的配線層之中的最上層(圖6所示的例子是面朝下安裝方式，因此圖6的情況是最下側的配線層)形成有焊墊3PD。半導體晶片3的表面3a是被絕緣膜3F覆蓋，焊墊3PD是在形成於絕緣膜3F的開口部3Fk中，從絕緣膜3F露出。在圖6所示的例子中，絕緣膜3F是將絕緣膜3F1與絕緣膜3F2層疊的層疊膜。絕緣膜3F1是例如氧化矽(SiO2)或氮化矽 (SiN)等的無機絕緣膜(鈍化膜)。並且，絕緣膜3F2是例如聚醯亞胺樹脂等的樹脂絕緣膜。另外，絕緣膜3F是有各種的變形例，例如亦有不形成絕緣膜3F2的情況。
並且，半導體晶片3的焊墊3PD是經由導電性構件來與配線基板2的接合指2BF電性連接。圖6所示的例子是在上述導電性構件中含有突起電極3BP。本實施形態的突起電極3BP是例如由銅(Cu)所構成，為形成方柱的柱狀電極。詳細是如圖5所示般，突起電極3BP是平面視形成角部被倒角加工的四角形。另外，柱狀電極的形狀並非限於方柱型，例如亦可形成圓柱形。
圖5及圖7所示的柱狀的突起電極3BP的平面視之一邊的長度是25μm~35μm程度。並且，圖6所示的突起電極3BP的高度(從與底層金屬膜3UB的接合界面到前端面BPt的距離)是27μm~40μm程度。
柱狀的突起電極3BP是在焊墊3PD上隔著底層金屬膜(底部凸塊金屬)3UB而形成。底層金屬膜3UB是例如用以使由鋁所構成的焊墊3PD與由銅所構成的突起電極3BP的連接性(例如電性特性或連接強度)提升的金屬膜，例如以鎳(Ni)等的金屬材料所構成。
並且，突起電極3BP與接合指2BF是經由導電性構件即焊錫材SD1來電性連接。焊錫材SD1是與例如利用圖3來說明的焊錫球SB同樣，可使用無鉛焊錫。使用焊錫材SD1作為電性連接突起電極3BP與接合指2BF的導電性構件是以下的點為理想。亦即，將焊錫材及非連接部 加熱至比焊錫材SD1所具有的焊錫成分的融點更高的溫度，然後一旦冷卻，則在與被連接對象物的接合界面形成有合金層。加熱至比焊錫成分的融點更高的溫度之後冷卻的處理是被稱為回流處理，即使有多數的端子時，還是可針對多數的端子一起處理。並且，即使針對多數的端子一起進行處理時，也會因為在焊錫材SD1與被連接對象物的連接界面形成有合金層，所以容易確保必要的連接強度。
並且，電性連接半導體晶片3與配線基板2的部分的周邊，亦即，在圖6所示的例子中，焊墊3PD，底層金屬膜3UB，突起電極3BP，焊錫材SD1，及自接合指2BF的防焊膜SR1露出的部分的周邊是被樹脂體4所密封。
在此，為了樹脂體4具有作為密封體的機能，而需要抑制與半導體晶片3的密著界面，及與配線基板2的密著界面的剝離。但，構成樹脂體4的樹脂材料(例如以環氧樹脂作為主體的樹脂)與半導體晶片3(特別是構成半導體基板的矽)是熱膨脹率的不同大。因此，一旦在熱膨脹率的差大的密著界面施加重複溫度上昇，溫度降低的溫度循環負荷，則會在密著界面產生應力，形成發生剝離等的原因。詳細，在熱膨脹率是有：直線方向的膨脹率的指標之線膨脹係數，及3次元空間的膨脹率的指標之體積膨脹係數，作為起因於溫度循環負荷的應力的產生原因是線膨脹係數的不同影響大。
於是，在樹脂體4中，如上述般，例如混合有矽石 等，線膨脹係數的值接近矽的填料粒子。例如，填料粒子的混合比例是50wt%(重量比例)以上為理想，以50wt%~80wt%程度來混合填料粒子。半導體晶片3的線膨脹係數是約4ppm(parts per million)程度。對於此，本實施形態是在樹脂體4中使50wt%以上的填料粒子混合之下，樹脂體4的線膨脹係數是例如形成25ppm~30ppm程度。在如此使樹脂體4的線膨脹係數接近半導體晶片3的線膨脹係數之下，可抑制半導體晶片3與樹脂體4的密著界面的剝離。
可是，本案發明者檢討時得知，光只靠降低樹脂體4的線膨脹係數，會有以下那樣的課題。本案發明者是在對於完成的半導體封裝(檢查體)重複進行加熱處理及冷卻處理的溫度循環試驗中發現下述的課題。但，發生下述課題是不限於實施溫度循環試驗時，可想像在安裝半導體封裝之後，因實際使用環境的溫度循環負荷也會發生。以下，詳細說明有關根據本案發明者的檢討所發現的課題。
在本實施形態中，如上述般，配線基板2的上面2a的大部分是被防焊膜SR1所覆蓋。因此，若防焊膜SR1的線膨脹係數大，則起因於溫度循環負荷，擔心在樹脂體4與防焊膜SR1的密著界面產生剝離。
例如，圖34所示的半導體裝置H1的情況，被混合於防焊膜SRh的填料粒子的比例是例如30wt%以下程度。並且，玻璃纖維是未被混合。此情況，防焊膜SRh的線膨脹係數是500ppm~1000ppm程度(亦即，0.05%~0.1% 程度)，相對於樹脂體4的線膨脹係數，形成10倍以上的值。
並且，如圖34所示般，在防焊膜SRh中形成有開口部Sk1時，起因於溫度循環負荷，應力會集中在開口部Sk1的端部，如在圖34所模式性顯示般，有時會在樹脂體4中產生龜裂CLK1。根據本案發明者的檢討，龜裂CLK1大多是以防焊膜SR1的開口部Sk1的開口端部(邊緣部)為起點產生。
並且，一旦產生此龜裂CLK1，則會在該產生處的附近進展，有時進展去處的導體圖案，例如就圖34所示的例子而言，接合指2BF的一部分或被層疊於半導體晶片3的表面3a側的配線層的一部分會損傷。
並且，可知在產生龜裂CLK1時也會發生以下那樣的課題。亦即，防焊膜SRh的線膨脹係數大時，接合指2BF會藉由防焊膜SRh而被拉至防焊膜SRh的方向。在圖34中，在接合指2BF被拉至防焊膜SR1的方向附上箭號ST1來模式性地顯示。一旦在圖34所示的箭號ST1的方向產生拉伸力，則在焊錫材SD1與接合指2BF的接合部，力量會作用於使接合界面剝離的方向。然後，可知若如此的力量重複作用，則在電性連接半導體晶片3與配線基板2的部分的其中一部分的連接界面發生剝離。詳細是可知在焊錫材SD1與接合指2BF的連接界面，焊錫材SD1與突起電極3BP的連接界面，突起電極3BP與底層金屬膜3UB的連接界面，或底層金屬膜3UB與焊墊3PD 或與絕緣膜3F的連接界面的其中任一處或複數處發生連接界面的剝離。
並且，為了使對於溫度循環負荷之半導體封裝全體的耐久性提升，可知不僅縮小防焊膜SRh的線膨脹係數，還須考慮所被層疊的各構件的線膨脹係數的平衡。例如，當防焊膜SRh的線膨脹係數比基材層2CR的線膨脹係數更小時，有時在防焊膜SRh與基材層2CR的連接界面產生起因於溫度循環負荷的剝離。並且，為了縮小防焊膜SRh的線膨脹係數，若使玻璃纖維(纖維材料)GC(參照圖6)過剩地混合，降低防焊膜SRh的加工性。因此，例如難以精度佳地形成開口部Sk1。
於是，本案發明者再檢討找出本實施形態的構成。亦即，本實施形態是在防焊膜SR1中含有複數的填料粒子。並且，在防焊膜SR1中，如在圖6所模式性顯示般含有玻璃纖維GC。在防焊膜SR1中混合玻璃纖維GC之下，可縮小防焊膜SR1的線膨脹係數。
本實施形態是使複數的填料粒子及玻璃纖維混合於防焊膜SR1之下，調整防焊膜SR1的線膨脹係數的值。亦即，理想上，最好是依樹脂體4，防焊膜SR1，基材層2CR的順序，線膨脹係數的值依序變小。而且，更理想是依樹脂體4，防焊膜SR1，接合指2BF，基材層2CR的順序，線膨脹係數的值依序變小。
並且，防焊膜SR1的線膨脹係數與樹脂體4的線膨脹係數是亦可相同。但，此情況，防焊膜SR1的線膨脹係數 是需要比基材層2CR的線膨脹係數更大。
並且，防焊膜SR1的線膨脹係數與基材層2CR的線膨脹係數是亦可相同。但，此情況，防焊膜SR1的線膨脹係數是需要比樹脂體4的線膨脹係數更小。
若彙整上述的線膨脹係數的關係，則如以下般。亦即，防焊膜SR1的線膨脹係數是基材層2CR的線膨脹係數以上，且防焊膜SR1的線膨脹係數是樹脂體4的線膨脹係數以下，且基材層2CR的線膨脹係數是比樹脂體4的線膨脹係數更小。
換言之，若將基材層2CR的線膨脹係數設為α1，將防焊膜SR1的線膨脹係數設為α2，將樹脂體4的線膨脹係數設為α3，則符合上述(式1)或上述(式2)的關係。
α1≦α2<α3…(式1)
α1<α2≦α3…(式2)
在圖6所示的例子中，半導體晶片3(詳細是半導體晶片3所具備的半導體基板)的線膨脹係數是約4ppm程度。並且，密著於半導體晶片3及防焊膜SR1的樹脂體4的線膨脹係數是25ppm~30ppm。並且，防焊膜SR1的線膨脹係數是15ppm~30ppm的範圍，且為樹脂體4的線膨脹係數的值以下。並且，基材層2CR的線膨脹係數是10~15ppm，且為防焊膜SR1的線膨脹係數的值以下。
藉由上述構成，即使溫度循環負荷被施加於層疊線膨 脹係數不同的複數的構件的半導體裝置SP1時，還是可抑制各絕緣層的連接界面的剝離。因此，可使半導體裝置的可靠度提升。
並且，接合指2BF的線膨脹係數是15ppm~17ppm的範圍，且為防焊膜SR1的線膨脹係數的值以下。接合指2BF的線膨脹係數與防焊膜SR1的線膨脹係數若使符合上述的關係，則可抑制密著於接合指2BF的絕緣層的密著界面的剝離，因此更理想。
在本實施形態中，之所以使玻璃纖維GC混合於防焊膜SR1，是為了使防焊膜SR1的線膨脹係數有效率地降低。在使填料粒子混入防焊膜SR1之下，只要能夠符合上述(式1)或上述(式2)的關係，也可思考不混合纖維材料的變形例。但，難不混合玻璃纖維GC來符合上述(式1)或上述(式2)的關係。另一方面，只要在防焊膜SR1中含玻璃纖維GC，便可比較容易符合上述(式1)或上述(式2)的關係。
另外，在採用符合上述(式1)或上述(式2)的關係的防焊膜SR1之下，雖也無法抑制利用圖34來說明的課題之中，在電性連接半導體晶片3與配線基板2的部分之中的一部分的連接界面產生剝離，但本實施形態的半導體裝置SP1是可更具備以下的構成，作為更確實解決此課題的手段。
亦即，如圖6所示般，在本實施形態中，突起電極3BP會被連接至與接合指2BF的延伸方向的前端重疊於厚 度方向的位置。詳細，如圖7所示般，複數的接合指2BF分別具有突起電極3BP會經由焊錫材SD1來連接的部分即結合部BF1。結合部BF1是被配置於防焊膜SR1的開口部Sk1內，具有位於平面視的接合指2BF的延伸方向(圖7所示的例子是X方向)的前端之前端面(前端邊)BFt。另外，如圖6所示般，前端面BFt是位於接合指2BF的延伸方向(在圖6是X方向)的前端之側面，但在如圖7所示那樣的平面視，可想像為邊。因此，在本實施形態的說明中，有時與前端面(前端邊)BFt併記顯示。
並且，複數的接合指2BF是分別從結合部BF1往與前端面(前端邊)BFt相反的方向延伸，一部分具有被防焊膜SR1覆蓋的配線部BF2。而且，平面視，複數的突起電極3BP是分別與複數的接合指2BF所具有的結合部BF1的前端面(前端邊)BFt重疊。
像本實施形態那樣，突起電極3BP與接合指2BF的前端面(前端邊)BFt是配置成重疊於厚度方向，換言之，以突起電極3BP的一部分能夠從接合指2BF的前端面(前端邊)BFt推出的方式配置(搭載)半導體晶片3之下，配置於突起電極3BP的正下面的焊錫材SD1的量會增加。詳細是可擴大焊錫材SD1之中覆蓋接合指2BF的前端面BFt的部分的厚度(接合指2BF的延伸方向(在圖6是X方向)的厚度)。焊錫材SD1是比構成接合指2BF或突起電極3BP的主要的金屬材料(例如銅)更低彈性的材料。如在圖6中附上箭號ST2所模式性顯示般，起 因於溫度循環負荷，而產生將接合指2BF拉至防焊膜SR1的方向之拉伸力時，本實施形態的情況也會在突起電極3BP的連接部分的周邊產生應力。
但，本實施形態的情況，配置於突起電極3BP的下方的焊錫材SD1之中，圖6所示覆蓋前端面BFt的部分的量會增加。而且，藉由包含覆蓋前端面BFt的部分的焊錫材SD1彈性變形，可緩和應力。換言之，在增多因溫度循環負荷而容易發生應力集中的前端面(前端邊)BFt的附近的焊錫材SD1的配置量之下，可藉由焊錫材SD1的彈性變形機能來抑制應力集中。
並且，本實施形態的情況，如上述般，防焊膜SR1的線膨脹係數為基材層2CR的線膨脹係數以上，且防焊膜SR1的線膨脹係數為樹脂體4的線膨脹係數以下，且基材層2CR的線膨脹係數是比樹脂體4的線膨脹係數更小。因此，在溫度循環負荷被施加於半導體裝置SP1時產生的拉伸力(以圖6的箭號ST2所示的力)是比溫度循環負荷被施加於圖34所示的半導體裝置H1時產生的拉伸力(以圖34的箭號ST1所示的力)更小。因此，半導體裝置SP1與半導體裝置H1作比較，可抑制在電性連接半導體晶片3與配線基板2的部分之中的一部分的連接界面發生剝離的現象。
又，如圖7所示般，本實施形態是結合部BF1的寬度(與接合指2BF的延伸方向正交的方向的長度)W1會比配線部BF2的寬度(與接合指2BF的延伸方向正交的方 向的長度)W2更大。在如此將結合部BF1的寬度W1形成比配線部BF2的寬度W2更大之下，可擴大結合部BF1與焊錫材SD1的接合面積。因此，焊錫材SD1與接合指2BF的接合強度會提升。雖圖示省略，但實際亦可將結合部BF1的寬度W1與配線部BF2的寬度W2形成相同，作為對於本實施形態的變形例。而且，亦可將配線部BF2的寬度W2形成比結合部BF1的寬度W1更大的值。
並且，在圖4所示的例子中，接合指2BF的配線部BF2是從形成於開口部Sk1內的結合部BF1往配線基板2的周緣部(換言之，朝側面2s)延伸。但，亦可使配線部BF2從形成於開口部Sk1內的結合部BF1往配線基板2的上面2a的中心延伸於內側，作為變形例。又，亦可在一個的開口部Sk1中以複數列配列複數的結合部BF1，作為進一步對本實施形態的變形例。有關此變形例是後述。
並且，在本實施形態中，有關晶片搭載面側的防焊膜SR1是針對使含玻璃纖維GC的實施形態進行說明。另一方面，圖3所示的安裝面側的防焊膜SR2是與電性連接半導體晶片3與配線基板2的部分無直接性的關係，因此亦可不使含玻璃纖維GC(參照圖6)來形成。但，由抑制配線基板2的彎曲變形的觀點來看，最好是使防焊膜SR1與防焊膜SR2的線膨脹係數一致。因此，在防焊膜SR2中最好是與防焊膜SR1同樣含玻璃纖維GC。並且，防焊膜SR2的線膨脹係數是基材層2CR的線膨脹係數以上，最好與防焊膜SR1的線膨脹係數同程度。在本實施形態 中，圖3所示的防焊膜SR2的線膨脹係數是在10ppm~30ppm的範圍內，且形成基材層2CR的線膨脹係數以上的值。
<半導體裝置的製造方法>
其次，說明有關利用圖1~圖7來說明的半導體裝置PK1的製造工程。半導體裝置SP1是沿著圖8所示的流程來製造。圖8是表示利用圖1~圖7來說明的半導體裝置的製造工程的概要的說明圖。
<基板準備工程>
首先，在圖8所示的基板準備工程中，準備圖9及圖10所示的配線基板20。圖9是表示在圖8所示的基板準備工程準備的配線基板的全體構造的平面圖，圖10是沿著圖9的A-A線的擴大剖面圖。另外，在圖10中，為了顯示形成於接合指2BF的露出面之焊錫材SD2，也顯示接合指2BF的周邊的擴大圖。並且，在圖10中，為了明示安裝面側的防焊膜SR2含玻璃纖維GC，也顯示防焊膜SR2與基材層2CR的黏著界面的一部分的擴大圖。
如圖9所示般，在本工程所準備的配線基板20是在框部(框體)20b的內側具備複數的製品形成領域20a。詳細是複數(在圖9是27個)的製品形成領域20a會被行列狀地配置。配線基板20是在相當於圖3所示的配線基板2的複數的製品形成領域20a與各製品形成領域20a 之間具有切割線(切割領域)20c之所謂取多數個基板。藉由如此使用具備複數的製品形成領域20a之取多數個基板，可使製造效率提升。
另外，本實施形態是針對使用取多數個基板的半導體裝置的製造方法進行說明，但亦可對於以小片形成的配線基板2(參照圖3)搭載半導體晶片3作為變形例。此情況，可省略圖8所示的小片化工程。
如圖10所示般，在各製品形成領域20a中是分別形成有利用圖1~圖7來說明的配線基板2的構成構件。詳細是配線基板20具備基材層2CR，該基材層2CR是具有上面2CRa及上面2CRa的相反側的下面2CRb。基材層2CR是使混合填料粒子的樹脂含浸於玻璃纖維GC之後加熱使熱硬化性樹脂成分硬化而取得。
並且，配線基板20的各製品形成領域20a是具備：形成於基材層2CR的上面2CRa上的複數的接合指2BF，配置於下面2CRb的複數的接端面2LD，及電性連接複數的接合指2BF與接端面2LD的複數的通孔配線2TW。
並且，在基材層2CR的上面2CRa是形成有利用圖6來說明之含玻璃纖維GC，複數的填料粒子及樹脂的絕緣層即防焊膜(絕緣層)SR1。基材層2CR的上面2CRa的大部分是被防焊膜SR1所覆蓋。防焊膜SR1是使混合填料粒子的樹脂含浸於玻璃纖維GC之後硬化而取得。當使含浸於玻璃纖維GC的樹脂例如含環氧等的熱硬化性樹脂成分時，可在形成防焊膜SR1之後加熱下使硬化。
又，如圖4所示般，在防焊膜SR1是形成有開口部Sk1，在開口部Sk1中，複數的接合指2BF的各一部分會從防焊膜SR1露出。就圖4所示的例子而言，開口部Sk1是跨越複數的接合指2BF而形成。換言之，複數的接合指2BF的各一部分是在一個的開口部Sk1中一起從防焊膜SR1露出。開口部Sk1的形成方法是例如可藉由利用光微影技術的蝕刻處理來形成。但，本實施形態是在防焊膜SR1中含有玻璃纖維GC(參照圖10)。因此，由除去玻璃纖維GC的一部分，精度佳地形成開口部Sk1的觀點來看，最好是藉由照射雷射來形成開口部Sk1。
並且，在基材層2CR的下面2CRb是形成有含樹脂的絕緣層即防焊膜(絕緣層)SR2，下面2CRb的大部分是被防焊膜SR2所覆蓋。並且，如圖3所示般，在防焊膜SR2是形成有複數的開口部Sk2，在開口部Sk2中，複數的接端面2LD的各一部分會從防焊膜SR2露出。在圖3所示的例子中，開口部Sk2是分別對應於複數的接端面2LD來形成。換言之，在複數的接合指2BF分別各形成有開口部Sk2，在複數的開口部Sk2中，複數的接合指2BF會分別從防焊膜SR2露出。
如上述般，本實施形態是在防焊膜SR2也含有玻璃纖維GC。防焊膜SR2是可與防焊膜SR1同樣形成。並且，開口部Sk2是與開口部Sk1同樣，亦可藉由蝕刻處理來形成，但由精度佳形成開口部Sk2的觀點來看，最好是藉由照射雷射來除去防焊膜SR2的一部分之方法。
並且，配線基板20所具備的導體圖案(接合指2BF，接端面2LD及通孔配線2TW)是分別以銅(Cu)為主成分的金屬材料所形成。在本實施形態中，作為形成該等的導體圖案之工法，例如使用縮減法或半加成法(Semi-additive Process)等的工法來形成。若根據如此的方法，則可像圖7所舉列說明那樣形成結合部BF1及配線部BF2。另外，各導體圖案的形成順序是首先在形成通孔配線2TW之後，形成使連接至通孔配線2TW的接合指2BF及接端面2LD。接合指2BF與接端面2LD的形成順序的前後是未被限定。
並且，防焊膜SR1及防焊膜SR2是在形成上述導體圖案之後形成。然後，形成開口部Sk1，使複數的接合指2BF露出於開口部Sk1內。並且，形成複數的開口部Sk2，而使複數的接端面2LD分別露出於開口部Sk2。
並且，在自複數的接合指2BF的防焊膜SR1露出的部分是預先被塗佈複數的焊錫材SD2。此焊錫材SD2是圖6所示的焊錫材SD1的原料。在圖8所示的半導體晶片搭載工程之前，預先在接合指2BF的結合部BF1的露出面形成焊錫材SD2，藉此在半導體晶片搭載工程中，可使形成於突起電極3BP(參照圖6)側的焊錫材(詳細後述)的浸潤性提升。焊錫材SD2是可藉由各種的形成方法來形成，例如可用電鍍法形成。並且，形成焊錫材SD2的時機是最好在防焊膜SR1形成開口部Sk1之後。此情況，在被防焊膜SR1覆蓋的部分是未形成有焊錫材SD2。
<半導體晶片準備工程>
圖8所示的半導體晶片準備工程是準備圖5所示的半導體晶片3。圖11是表示在圖8所示的晶圓準備工程準備的半導體晶圓的平面圖，圖12是表示形成於圖11所示的半導體晶圓之一個的晶片領域的焊墊的周邊的擴大剖面圖。又，圖13是表示在圖12所示的複數的焊墊上形成底層金屬膜及突起電極的狀態的擴大剖面圖，圖14是表示在圖13所示的突起電極的前端面上安裝焊錫材的狀態的擴大剖面圖。又，圖15是表示去除圖14所示的遮罩的狀態的擴大剖面圖，圖16是表示將圖15所示的焊錫材加熱而使變形成圓頂形狀的狀態的擴大剖面圖。
圖5所示的半導體晶片3是例如以下般製造。首先，在圖8所示的晶圓準備工程中，準備圖11所示的晶圓(半導體晶圓)WH。在本工程所準備的晶圓WH是如圖11所示般具有：具有大略圓形的平面形狀的表面3a，及位於表面3a的相反側的背面3b。並且，晶圓WH是具有複數的晶片領域(裝置領域)WHa，各晶片領域WHa是分別相當於圖5所示的半導體晶片3。並且，在鄰接的晶片領域WHa之間是形成有切割道(scribe line)(切割領域)WHb。切割道WHb是形成格子狀，將晶圓WH的表面3a區劃成複數的晶片領域WHa。並且，在切割道WHb是形成有複數個用以確認形成於晶片領域WHa內的半導體元件等是否正確地形成的TEG(Test Element Group) 或對準標記等的導體圖案。
在本工程所準備的晶圓WH中，例如電晶體等的複數的半導體元件(圖示是省略)會被形成於例如由矽(Si)所構成的半導體基板的主面(元件形成面)。並且，在半導體基板的半導體元件形成面上層疊有複數的配線層(圖示是省略)，在最上層是形成有與該等複數的配線層電性連接的複數的焊墊3PD。複數的焊墊3PD是經由形成於配線層的複數的配線來分別與複數的半導體元件電性連接。亦即，在本工程所準備的晶圓WH中，預先在半導體基板的半導體元件形成面上形成有積體電路。並且，半導體晶片3的表面3a是例如藉由氧化矽(SiO2)或聚醯亞胺樹脂等的絕緣膜3F所覆蓋，但在複數的焊墊3PD上，以能夠覆蓋表面3a的方式形成有開口部3Fk。而且，在開口部3Fk中，焊墊3PD會從絕緣膜3F露出。
其次，在圖8所示的突起電極形成工程中，如圖13所示般，分別使金屬膜堆積於複數的焊墊3PD上而形成突起電極3BP。在本實施形態中，如圖13所示般在晶圓WH的表面3a上配置(固定)遮罩MS。然後，在形成突起電極3BP的位置形成貫通孔(開口部)MSh。貫通孔MSh是例如可使用光微影技術或蝕刻技術來形成。
接著，使金屬膜堆積於貫通孔MSh內而形成突起電極3BP。在本實施形態中，例如使鎳膜等的底層金屬膜3UB堆積後，使銅膜堆積，而形成突起電極3BP。使金屬膜堆積的方法並無特別加以限定，例如可藉由電鍍法來使 堆積。如此，藉由使金屬膜堆積來形成底層金屬膜3UB及突起電極3BP時，在接合突起電極3BP與焊墊3PD時，可降低施加於焊墊3PD的壓力。
特別是若與球接合方式等將突起電極壓接(含熱壓接合)於焊墊的方式作比較，則以電鍍法形成的本實施形態的方法較能降低壓力。因此，可抑制起因於突起電極形成時的晶片領域WHa的破損之可靠度降低。並且，在遮罩MS形成有複數的貫通孔MSh的狀態下使金屬膜堆積下，可一起形成複數(多數)的突起電極3BP。因此，可有效率地形成突起電極3BP。又，由於在分割晶圓WH之前形成突起電極3BP，所以可在複數的晶片領域WHa一起形成突起電極3BP。因此，可有效率地形成突起電極3BP。如此使金屬膜堆積於遮罩MS的貫通孔MSh內而形成的突起電極是成為具備柱型的立體形狀的柱狀電極。並且，突起電極3BP的平面形狀是對應於貫通孔MSh的開口形狀來形成。例如，本實施形態是形成四個角部被倒角而形成曲線的四角形(四邊形)的開口形狀。但，在柱狀電極的形狀有各種的變形例，例如可形成圓柱形。
其次，在圖8所示的焊錫材形成工程中，如圖14所示般，分別使焊錫膜堆積於突起電極3BP的前端面BPt上而形成焊錫材SD3(安裝)。本實施形態是在前述的突起電極形成工程至貫通孔MSh(參照圖13)的途中堆積金屬膜，然後接著(不去除遮罩MS)使焊錫膜堆積。因此，例如只要在使銅膜堆積之後，接著使焊錫膜堆積，便 可抑制在形成焊錫膜之前在銅膜形成氧化膜。因此，可使焊錫材SD3與突起電極3BP的接合界面的接合強度提升。並且，在本工程以焊錫材SD3來覆蓋突起電極3BP的前端面BPt，藉此可防止前端面BPt暴露於大氣，所以可維持在前端面BPt難形成氧化膜的狀態。因此，可使焊錫材SD3與突起電極3BP的接合界面的接合強度提升。此結果，可使焊錫材SD3與前端面BPt的接合界面的接合強度提升。另外，為了更確實地抑制突起電極3BP的氧化，亦可在突起電極3BP的前端面BPt形成鎳(Ni)膜。但，在形成鎳膜時，用以形成鍍鎳膜的電鍍的工程數(工程時間)會增加，因此最好像本實施形態那樣，在突起電極3BP的前端面BPt直接形成焊錫材SD3。
其次，若去除遮罩MS(參照圖14)，進行洗淨，則如圖15所示般，突起電極3BP的側面會露出。在此狀態下，焊錫材SD3是與突起電極3BP同樣為四方柱的形狀，但若施以熱處理(加熱處理)，使焊錫材SD3的至少一部分溶融，則如圖16所示般，焊錫材SD3的形狀會因溶融焊錫的表面張力的影響而變形，成為圓頂形狀。若如此實施熱處理，則可牢固地接合突起電極3BP的前端面BPt與焊錫材SD3。並且，如圖16所示般設為圓頂形狀，焊錫材SD3較為安定，因此可抑制從突起電極脫落或損傷。
藉由以上的各工程，可取得在複數的焊墊3PD的表面(上面)上形成(接合)有複數的突起電極3BP，且在 複數的突起電極3BP的前端面BPt形成有複數的焊錫材SD3之晶圓WH。
其次，在形成有複數的突起電極3BP的晶圓WH的表面貼上背面研磨用的膠帶，藉由研磨(研削)晶圓WH的背面來取得所望的厚度的晶圓WH。另外，所準備的晶圓WH的厚度在晶圓的準備段階已薄時，或，無須薄時，可刪除此研削工程。
其次，在圖8所示的分割工程中，按每個晶片領域WHa來分割(小片化)圖16所示的晶圓WH，取得複數個圖5所示的半導體晶片3。在本工程中，沿著圖12所示的切割道WHb來將晶圓WH切斷，分割。切斷方法並無特別加以限定，但可使用切割刀(旋轉刀)的切斷方法或照射雷射的切斷方法。
<半導體晶片搭載工程>
在圖8所示的半導體晶片搭載工程中，如圖17所示般，將半導體晶片3搭載於配線基板20上。在本實施形態中，半導體晶片3的表面3a是以能夠和配線基板20的上面2a對向的方式配置於配線基板20上，電性連接複數的接合指2BF與複數的焊墊3PD。圖17是表示在圖12所示的配線基板上搭載半導體晶片的狀態之擴大剖面圖。又，圖18是表示在配線基板上配置半導體晶片時的突起電極與端子的平面的位置關係之擴大平面圖。又，圖19是沿著圖18的A-A線的擴大剖面圖。又，圖20是表示 圖19所示的焊錫材一體化的狀態之擴大剖面圖。
在本工程，首先，如圖17所示般，半導體晶片3的表面3a是以能夠和配線基板20的上面2a對向的方式配置於配線基板20上(半導體晶片配置工程)。此時，如圖18所示般，複數的突起電極3BP是以能夠分別與複數的接合指2BF的前端面(前端邊)BFt重疊的方式調整半導體晶片3與配線基板20的平面性的位置關係。換言之，如圖19所示般，被安裝於突起電極3BP的前端面BPt的焊錫材SD3是以能夠和接合指2BF的前端面(前端邊)BFt重疊於厚度方向的方式，將半導體晶片3對位於配線基板20上而配置。
如上述般，本實施形態是在配置於突起電極3BP的下方的焊錫材SD1之中，使覆蓋接合指2BF的前端面BFt的部分的量增加之下，使起因於溫度循環負荷而產生於突起電極3BP的周邊的應力緩和。在本工程中，只要以複數的突起電極3BP與複數的接合指2BF的前端面(前端邊)BFt能夠重疊於厚度方向的方式對位，便可使配置於突起電極3BP的下方的焊錫材SD1之中覆蓋接合指2BF的前端面BFt的部分的量增加。
換言之，可擴大焊錫材SD1之中覆蓋接合指2BF的前端面BFt的部分的厚度(接合指2BF的延伸方向(在圖18及圖19是X方向)的厚度)。更換言之，可使配置於突起電極3BP的正下面的焊錫材SD1的量增加。
其次，拉近圖19所示的半導體晶片3與配線基板2 的距離，使焊錫材SD2與焊錫材SD3接觸(抵接)。此時，使焊錫材SD3與焊錫材SD2之中覆蓋接合指2BF的前端面BFt的部分重疊於厚度方向的方式接觸。並且，分別在複數的接合指2BF之中，為了使焊錫材SD2與焊錫材SD3接觸，最好焊錫材SD2或焊錫材SD3的至少一方被預先加熱至接觸後變形的程度的硬度。
其次，焊錫材SD2及焊錫材SD3會更加熱至融點以上(加熱工程(熱處理工程，回流工程)。加熱溫度是依焊錫材SD2及焊錫材SD3的融點而變化，採用錫-銀(Sn-Ag)系的無鉛焊錫時是加熱於230℃~300℃。本工程是在使焊錫材SD2與焊錫材SD3接觸的狀態下加熱，因此例如只要加熱半導體晶片3，便可藉由來自焊錫材SD3的熱傳達加熱焊錫材SD2。然後，一旦焊錫材SD2及焊錫材SD3分別溶融，則焊錫材SD2與焊錫材SD3會一體化。亦即，焊錫材SD2及焊錫材SD3會成為所謂，「浸潤」狀態。然後，在使一體化後，藉由冷卻溶融焊錫，形成圖20所示的焊錫材SD1。
又，若圖19所示的焊錫材SD2與焊錫材SD3一體化，則藉由一體化後的溶融焊錫的表面張力，物理性地變形成安定的形狀。亦即，形成類似於球形的形狀。亦即，在本工程中，平面視，在複數的突起電極3BP分別與複數的接合指2BF的前端面(前端邊)BFt重疊的狀態下固定半導體晶片3。
像本實施形態那樣，突起電極3BP的一部分存在於與 接合指2BF不重疊於厚度方向的位置時，在該部分的正下面(突起電極3BP與基材層2CR的上面2CRa之間的空間)是如圖19所示般形成有厚的焊錫材SD1。亦即，可使突起電極3BP的正下面之中與接合指2BF不重疊的部分的焊錫材SD1的量增加。此結果，可使起因於溫度循環負荷而產生於突起電極3BP的周邊的應力緩和。
<密封工程>
其次，在圖8所示的密封工程中，如圖21所示般，在半導體晶片3的表面3a與配線基板20的上面2a之間供給樹脂體4，將電性連接焊墊3PD與接合指2BF的部分予以密封。圖21是表示在圖17所示的半導體晶片與配線基板之間供給底部填充樹脂的狀態之擴大剖面圖。
本工程是例如在半導體晶片3的側面3s的外側配置樹脂供給用的噴嘴NZ1，將液狀或膏狀的樹脂4p供給至半導體晶片3的表面3a與配線基板20的上面2a之間。在樹脂4p中含有熱硬化性樹脂成分及複數的填料粒子。
被供給至半導體晶片3的表面3a與配線基板20的上面2a之間的樹脂4p是藉由毛細管現象來擴大至半導體晶片3的表面3a與配線基板20的上面2a的空間。然後，只要加熱樹脂4p而使含於樹脂4p的熱硬化性樹脂成分硬化，便可藉由樹脂體4來一起密封圖20所示的焊墊3PD，底層金屬膜3UB，突起電極3BP，焊錫材SD1，及接合指2BF的各接合部。
如此，藉由樹脂體4來密封焊墊3PD與接合指2BF的連接部之下，可使施加於連接部的應力分散於樹脂體4，因此由使焊墊3PD與接合指2BF的連接可靠度提升的觀點來看為理想。
又，由使樹脂體4與半導體晶片3的黏著強度提升的觀點來看，在半導體晶片3的周圍也形成樹脂體4，樹脂體4的一部分形成覆蓋半導體晶片3的側面3s的至少一部分的圓角(fillet)為理想。只要在樹脂體4的周緣部形成有圓角，則樹脂體4會分別黏著於半導體晶片3的表面3a及複數的側面3s，因此黏著強度會提升。
並且，如上述般在半導體晶片3的周圍也形成樹脂體4時，防焊膜SR1的開口部Sk1是藉由樹脂體4來堵塞。因此，例如圖6所示般形成開口部Sk1的開口端部會被樹脂體4所密封的構造。
並且，在本實施形態中，藉由使複數的填料粒子含於樹脂體4，樹脂體4的線膨脹係數是例如形成25ppm~30ppm程度，降低與半導體晶片3的線膨脹係數(例如4ppm)的差。因此，可抑制在樹脂體4與半導體晶片3的密著界面發生起因於溫度循環負荷的剝離。
並且，如上述般，硬化後的樹脂體4的線膨脹係數是密著於樹脂體4的防焊膜SR1的線膨脹係數以上，且比基材層2CR的線膨脹係數更大。因此，在樹脂體4中混合填料粒子之下，即使是使樹脂體4的線膨脹係數降低的情況，還是可抑制在防焊膜SR1與樹脂體4的密著界面發生 起因於溫度循環負荷的剝離。
另外，在本實施形態所說明的技術是不限適用在半導體晶片搭載工程之後形成樹脂體4的製造方法，可適用各種的變形例。例如，對於本實施形態的變形例，有在半導體晶片搭載工程之前，先在搭載半導體晶片的預定領域(晶片搭載領域)形成膏狀或薄膜狀的樹脂之方法。此情況，在半導體晶片搭載工程中，貫通預先形成的樹脂來電性連接突起電極3BP與接合指2BF，然後使樹脂硬化而形成樹脂體4。亦即，在密封工程是不供給樹脂，進行加熱硬化處理。
<球安裝工程>
其次，在圖8所示的球安裝工程中，如圖22所示般，在形成於配線基板20的下面2b之複數的接端面2LD接合複數的焊錫球SB。圖22是表示在圖21所示的配線基板的複數的接端面上接合焊錫球的狀態的擴大剖面圖。本工程是如圖22所示般分別在配線基板20的下面2b中露出的複數的接端面2LD上配置焊錫球SB之後，加熱下接合複數的焊錫球SB與接端面2LD。藉由本工程，複數的焊錫球SB是經由配線基板20來與半導體晶片3電性連接。但，在本實施形態所說明的技術是不限於適用在接合焊錫球SB之所謂BGA(Ball Grid Array)型的半導體裝置。例如，作為對於本實施形態的變形例，可適用在不使形成焊錫球SB，使接端面2LD露出的狀態，或在接端面 2LD塗佈比焊錫球SB更薄的焊錫膏的狀態下出貨之所謂LGA(Land Grid Array)型的半導體裝置。
<小片化工程>
其次，在圖8所示的小片化工程中，按每個製品形成領域20a(參照圖9)來分割配線基板20。圖23是表示在圖8所示的小片化工程中，將取多數個的配線基板小片化的狀態的剖面圖。
本工程是沿著圖9所示的切割線(切割領域)20c來切斷配線基板20，按每個製品形成領域20a來分割成小片，取得複數個圖1所示的半導體裝置。圖23所示的例子是在固定於固定配線基板20的治具DCd之狀態下，利用切割刀(旋轉刀)DCb來切削配線基板20的切割線20c而切斷。
藉由以上的各工程，取得利用圖1~圖7來說明的半導體裝置SP1。然後，進行外觀檢查或電性試驗等必要的檢查，試驗，出荷，或，安裝於未圖示的安裝基板。
以上，根據實施形態來具體說明本發明者所研發的發明，但本發明並非限於上述實施形態，上述舉例說明的變形例以外，當然可在不脫離其要旨的範圍實施各種變更。以下，舉例說明有關相對於上述實施形態的變形例。
<變形例1>
首先，在上述實施形態中，作為抑制起因於溫度循環 負荷所產生的應力的影響造成半導體裝置的可靠度降低之方法，是針對使玻璃纖維GC含於防焊膜SR1中而調整防焊膜SR1的線膨脹係數之技術(以下述載為線膨脹係數調整技術)進行說明。
並且，上述實施形態是說明在電性連接圖6所示的焊墊3PD與接合指2BF之導電性構件的接合界面，因在圖6中附上箭號ST2所示的拉伸力，而發生剝離或損傷的現象及其解決策。亦即，在接合指2BF的前端面(前端邊)BFt與突起電極3BP重疊於厚度方向的狀態下，突起電極3BP與接合指2BF會經由焊錫材SD1來電性連接的技術(以下述載為突起電極佈局技術)。
上述實施形態是說明有關組合線膨脹係數調整技術與突起電極佈局技術來適用的實施形態，但亦可分別適用線膨脹係數調整技術及突起電極佈局技術，作為變形例。
例如，圖24所示的半導體裝置SP2是突起電極3BP與接合指2BF的前端面(前端邊)BFt在厚度方向不重疊的點，和圖6所示的半導體裝置SP1不同。亦即，半導體裝置SP2是獨立適用上述線膨脹係數調整技術，未適用上述突起電極佈局技術的實施形態。
半導體裝置SP2的情況，在防焊膜SR1中含有玻璃纖維GC。並且，防焊膜SR1的線膨脹係數為基材層2CR的線膨脹係數以上，且防焊膜SR1的線膨脹係數為樹脂體4的線膨脹係數以下，且基材層2CR的線膨脹係數比樹脂體4的線膨脹係數更。
因此，即使在圖24中附上箭號ST2而示的拉伸力起因於溫度循環負荷而產生時，圖24所示的拉伸力的大小還是比在圖34中附上箭號ST1而示的拉伸力更小。因此，半導體裝置SP2與半導體裝置H1作比較，可抑制在電性連接半導體晶片3與配線基板2的部分之中的一部分的連接界面發生剝離的現象。
又，圖25所示的半導體裝置SP3是在形成於晶片搭載面側的防焊膜SR3中未含圖6所示的玻璃纖維GC等的纖維材料的點，與圖6所示的半導體裝置SP1不同。亦即，半導體裝置SP3是獨立適用上述突起電極佈局技術，未適用上述線膨脹係數調整技術的實施形態。
半導體裝置SP3的情況，由於在防焊膜SR1未含纖維材料，因此防焊膜SR3的線膨脹係數是比圖6所示的防焊膜SR1的線膨脹係數更大。例如防焊膜SR3的線膨脹係數是形成500ppm~1000ppm。因此，防焊膜SR3的線膨脹係數是形成分別比樹脂體4的線膨脹係數及基材層2CR的線膨脹係數更大的值。
因此，溫度循環負荷被施加於半導體裝置SP3時產生的拉伸力是如在圖25中附上箭號ST2所示般變大。但，半導體裝置SP3是突起電極3BP會與接合指2BF的前端面(前端邊)BFt重疊於厚度方向。因此，配置於突起電極3BP的下方的焊錫材SD1之中覆蓋前端面BFt的部分的量與圖34所示的半導體裝置H1作比較，可使增加。因此，藉由包含覆蓋前端面BFt的部分之焊錫材SD1彈性 變形，可緩和應力。
亦即，圖25所示的半導體裝置SP3與圖34所示的半導體裝置H1作比較，在被施加溫度循環負荷時，可抑制在電性連接焊墊3PD與接合指2BF的導電性構件的接合界面發生剝離或損傷。
圖24所示的半導體裝置SP2及圖25所示的半導體裝置SP3是除了上述的相異點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
<變形例2>
並且，有別於上述實施形態說明的突起電極佈局技術的方法，也有抑制電性連接焊墊3PD與接合指2BF的導電性構件的接合界面的剝離或損傷的方法。圖26所示的半導體裝置SP4是在防焊膜SR1的開口部Sk1內從防焊膜SR1露出的接合指2BF的配線部BF3的形狀會與圖7所示的半導體裝置SP1不同。並且，圖26所示的半導體裝置SP4是突起電極3BP與接合指2BF的前端面(前端邊)BFt未重疊於厚度方向的點，與圖6所示的半導體裝置SP1不同。
如圖26所示般，半導體裝置SP4的複數的接合指2BF是分別具有：配置於開口部Sk1內的結合部BF1，及從結合部BF1往防焊膜SR1延伸，一部分會被防焊膜SR1所覆蓋的配線部BF3。
在此，複數的配線部BF3是分別在結合部BF1與被 防焊膜SR1覆蓋的配線部BF3的一部分之間具有延伸方向變化的變曲點FP。變曲點FP是為了使配線部BF3的延伸方向變化而彎曲的部分，例如圖26所示般，除了配線部BF3的途中折彎的彎曲構造以外，亦可為曲線性地彎曲的構造。
當溫度循環負荷被施加於半導體裝置SP4時，藉由接合指2BF被拉至防焊膜SR1而產生的拉伸力是如在圖26中附上箭號ST2而顯示般，沿著配線部BF3的延伸方向來產生。另一方面，在接合指2BF的結合部BF1的附近，拉伸力之應力集中容易發生的部分是前端面(前端邊)BFt的周邊部分。並且，拉伸力之中，成為突起電極3BP及接合指2BF等的導電性構件的接合界面的剝離的原因之成分是對於前端面(前端邊)BFt的延伸方向正交的方向(在圖26是X方向)的拉伸力成分。
於是，如圖26所示的半導體裝置SP4般，若在結合部BF1與被防焊膜SR1覆蓋的配線部BF3的一部分之間形成延伸方向變化的變曲點FP，則作為箭號ST2顯示的拉伸力是在結合部BF1的前端面(前端邊)的附近，被分解成以箭號ST3所示的拉伸力成分及以箭號ST4所示的拉伸力成分。亦即，可減低拉伸力之中，成為突起電極3BP及接合指2BF等的導電性構件的接合界面的剝離的原因之成分(以箭號ST3所示的成分)。
如此，在圖26所示的變形例中，由於可減低成為突起電極3BP及接合指2BF等的導電性構件的接合界面的 剝離的原因之拉伸力成分，因此可抑制該接合界面的剝離或損傷。
並且，配線部BF3在結合部BF1與被防焊膜SR1覆蓋的配線部BF3的一部分之間具有延伸方向變化的變曲點FP時，在圖26中以箭號ST2所示的拉伸力發生時，配線部BF3會例如彈簧般容易彈性變形。然後若配線部BF3彈性變形，則可更減低被傳達至結合部的拉伸力。
並且，由使配線部BF3像彈簧那樣彈性變形的觀點來看，最好與配線部BF3的延伸方向正交的方向的寬度窄。因為細長的金屬圖案較容易彈性變形。因此，如圖26所示般，配線部BF3的寬度(與配線部BF3的延伸方向正交的方向的長度)W2比結合部BF1的寬度(沿著前端面(前端邊)BFt的方向的長度)W1更小的情況，由配線部BF3容易彈性變形的觀點來看較理想。
圖26所示的半導體裝置SP4是除了上述的相異點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
並且，在圖26是說明有關使用含有玻璃纖維GC(參照圖6)的防焊膜SR1的實施形態。亦即，說明有關組合線膨脹係數調整技術及在結合部BF1與被防焊膜SR1覆蓋的配線部BF3的一部分之間設置延伸方向變化的變曲點FP的技術(以下述載為配線部彎曲技術)之實施形態。但，上述配線部彎曲技術是可不與線膨脹係數調整技術或突起電極佈局技術組合地獨立適用。此情況，將圖26所 示的防焊膜SR1置換成圖25所示的防焊膜SR3。
並且，在圖26是說明有關突起電極3BP與接合指2BF的結合部BF1的前端面(前端邊)BFt不重疊於厚度方向的實施形態。但，上述配線部彎曲技術是可與突起電極佈局技術組合使用。此情況，抑制突起電極3BP及接合指2BF等的導電性構件的接合界面的剝離之效果是更提升。
並且，在組合上述配線部彎曲技術，線膨脹係數調整技術，及突起電極佈局技術的全部時，抑制突起電極3BP及接合指2BF等的導電性構件的接合界面的剝離之效果是更提升。
<變形例3>
並且，在上述實施形態中，為了容易理解技術的思想，而舉在基材層2CR的上面2CRa及下面2CRb分別形成有配線層之2層配線層構造的配線基板2的例子來進行說明。但，配線層的數量並非限於2層，亦可適用在3層以上的多層構造的配線基板。
例如，圖27所示的半導體裝置SP5是在基材層2CR的上面2CRa層疊有例如藉由增層(Build Up)工法所形成的絕緣層即增層層(基材層)2BU1。並且，在基材層2CR的下面2CRb層疊有例如藉由增層工法所形成的絕緣層即增層層(基材層)2BU2。而且，在基材層2CR的上面2CRa，下面2CRb，增層層2BU1的上面2BU1a，增層 層2BU2的下面2BU2b分別形成有配線層。亦即，半導體裝置SP5所具有的配線基板2A是層疊有4層的配線層之多層配線基板。
配線基板2A的情況，端子之接合指2BF是形成於增層層2BU1的上面2BU1a。並且，在增層層2BU1的上面2BU1a上形成有防焊膜SR1，接合指2BF的一部分(形成於開口部Sk1的外部的部分)是被防焊膜SR1所覆蓋。並且，接合指2BF之中形成於防焊膜SR1的開口部Sk1內的部分是從防焊膜SR1露出。
並且，接合半導體裝置SP5的外部端子即複數的焊錫球SB之複數的接端面2LD是形成於增層層2BU2的下面2BU2b。並且，在增層層2BU2的下面2BU2b上是形成有防焊膜SR2，複數的接端面2LD是分別在形成於防焊膜SR2的複數的開口部Sk2從防焊膜SR2露出。
並且，複數的接合指2BF與複數的接端面2LD是經由使增層層2BU1或增層層2BU2導通於厚度方向的複數的通孔配線2VA，及使基材層2CR導通於厚度方向的複數的通孔配線2TW來分別電性連接。
另外，本變形例是將配置於厚度方向的中央的核心絕緣層記載為基材層2CR，密著於基材層2CR的絕緣層是記載為增層層2BU1或增層層2BU2，但增層層2BU1及增層層2BU2分別也含在配線基板的基材層中。
在上述實施形態說明的線膨脹係數調整技術是樹脂體4的線膨脹係數，密著於樹脂體4的防焊膜SR1的線膨脹 係數，及與密著於防焊膜SR1的樹脂體4相反側的絕緣層(底層絕緣層)的線膨脹係數之關係為重要。因此，像半導體裝置SP5那樣使用多層配線基板即配線基板2A時，樹脂體4的線膨脹係數，防焊膜SR1的線膨脹係數，及晶片搭載面側的增層層2BU1的線膨脹係數之關係為重要。
亦即，如圖28所示般半導體裝置SP5的配線基板2A所具備的增層層2BU1及防焊膜SR1是分別含玻璃纖維GC。而且，防焊膜SR1的線膨脹係數為增層層2BU1的線膨脹係數以上，防焊膜SR1的線膨脹係數為樹脂體4的線膨脹係數以下，且增層層2BU1的線膨脹係數比樹脂體4的線膨脹係數更小。
換言之，若將增層層2BU1的線膨脹係數設為α1，將防焊膜SR1的線膨脹係數設為α2，將樹脂體4的線膨脹係數設為α3，則符合上述(式1)或上述(式2)的關係。
α1≦α2<α3…(式1)
α1<α2≦α3…(式2)
藉由上述構成，即使溫度循環負荷被施加於層疊線膨脹係數不同的複數的構件的半導體裝置SP5時，還是可抑制各絕緣層的連接界面的剝離。因此，可使半導體裝置的可靠度提升。
又，作為圖27及圖28所示的半導體裝置SP5的更進一步的變形例，可將上述突起電極佈局技術或配線部彎曲技術予以分別獨立或分別組合適用。
圖27及圖28所示的半導體裝置SP5是除了上述的相異點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
<變形例4>
並且，在上述實施形態中，為了容易理解技術的思想，如圖7所示般，說明在開口部Sk1內以複數的接合指2BF來配置的例子。但，接合指2BF的配列是圖7所示的形態以外，有各式各樣的變形例。
例如，有像圖29所示的半導體裝置SP6那樣，在開口部Sk1內接連複數列配置複數的接合指2BF之變形例。此情況，複數的接合指2BF之中，配置於配線基板2的外周側之接合指2BF的配線部BF2是朝配線基板2的上面2a的周緣部延伸，配置於內周側之接合指2BF的配線部BF2是朝配線基板2的上面2a的中央部延伸。
並且，像半導體裝置SP6那樣，以複數列形成接合指2BF時，由使端子的配置密度提升來減低配線基板2的平面積的觀點來看，最好是鋸齒狀地配列接合指2BF。所謂鋸齒配置是平面視以第1列(例如圖29的紙面右側的列)的複數的接合指2BF的位置與第2列(例如圖29的紙面左側的列)的位置能夠交替地錯開的方式配置的配列方法。詳細，所謂鋸齒配置是以第1列的結合部BF1的前端面(前端邊)BFt能夠與第2列的複數的接合指2BF之中相鄰的接合指2BF之間的間隙對向的方式，交替地錯開 第1列及第2列的複數的接合指2BF而配置的配列方法。
又，例如，也有像圖30所示的半導體裝置SP7那樣，接合指2BF不具圖6所示的前端面(前端邊)BFt，在結合部BF1的延伸方向的兩端連接配線部BF2的變形例。像半導體裝置SP7那樣，若在接合指2BF的結合部BF1的兩端連接配線部BF2，則可在配線基板2的上面2a的周緣部或中央部的任一方延長拉出配線。因此，配線設計的自由度會提升。
又，作為圖29所示的半導體裝置SP6或圖30所示的半導體裝置SP7的更進一步的變形例，是可分別獨立或分別組合適用上述突起電極佈局技術或配線部彎曲技術。但，圖30所示的半導體裝置SP8的情況，由於配線部BF2是被連接至結合部BF1的兩端，因此即使平面視錯開突起電極3BP與結合部BF1的位置關係，也難以使覆蓋結合部BF1的側面的焊錫材SD1量充分地增加。因此，半導體裝置SP7的情況，是不適用上述突起電極佈局技術，以突起電極3BP與接合指2BF的結合部BF1的中央部為對向那樣的位置關係來連接突起電極3BP與接合指2BF的結合部BF1為理想。
圖29所示的半導體裝置SP6及圖30所示的半導體裝置SP7是除了上述的相異點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
<變形例5>
並且，在上述實施形態中，作為電性連接半導體晶片3與配線基板2的導電性構件，是說明有關在焊墊3PD上隔著底層金屬膜3UB來形成柱狀的突起電極3BP，經由焊錫材SD1來電性連接突起電極3BP與接合指2BF的實施形態。但，電性連接半導體晶片3與配線基板2的導電性構件是有各種的變形例。
例如雖圖示省略，但實際有圖6所示未形成底層金屬膜3UB的變形例。
又，例如圖31所示的半導體裝置SP8那樣，使用應用打線接合技術而形成的柱形凸塊3BPs作為突起電極3BP之變形例。圖31記載的柱形凸塊3BPs是藉由球接合技術，亦即，使接線的前端溶融而形成球部之後，將球部壓接於被接合部而接合之接合方法來形成。例如，若以金來形成柱形凸塊3BPs，則在焊錫材SD1與突起電極3BP的接合部是形成有金與焊錫的合金層，可使接合強度提升。
形成此柱形凸塊3BPs的工程是在圖8所示的突起電極形成工程中可在分割半導體晶圓之前進行。並且，以金來形成柱形凸塊3BPs時，可省略半導體晶片準備工程中所含的焊錫材形成工程。
又，如半導體裝置SP8般，將突起電極3BP形成柱形凸塊3BPs時，亦可獨立適用上述的線膨脹係數調整技術，突起電極佈局技術，及配線部彎曲技術的任一個。又，可組合線膨脹係數調整技術，突起電極佈局技術，及 配線部彎曲技術的其中二個以上適用。
另外，柱形凸塊3BPs是藉由進行球接合時使用的治具即孔穴(圖示省略)所成形，切斷多餘的接線而形成。因此，像圖6所示的柱狀的突起電極3BP那樣的前端面BPt大多是未被明確形成的情況。在半導體裝置SP8的構造中，適用上述的突起電極佈局技術時，只要圖31所示的柱形凸塊3BPs的至少一部分與接合指2BF的前端面BFt重疊於厚度方向，便可使覆蓋前端面BFt的焊錫材SD1的量增加。
又，例如，圖32所示的半導體裝置SP9那樣，作為突起電極3BP，有利用焊錫材SD1的變形例。半導體裝置SP9是在半導體晶片3的表面3a上層疊再配線層，可在與焊墊3PD不重疊於厚度方向的位置配置突起電極3BP即焊錫材SD1之半導體封裝。
半導體裝置SP9是在半導體晶片的焊墊3PD連接再配線3RD，在再配線3RD經由底層金屬膜3UB來連接焊錫材SD1。再配線3RD是用以將平面視的焊錫材SD1變換至與焊墊3PD不同的位置之配線。藉由使再配線3RD介於突起電極3BP與焊墊3PD之間，亦可將半導體晶片3的介面端子即突起電極3BP的位置例如配置成行列狀。
半導體裝置SP9所具有的再配線層是使半導體晶圓小片化而取得半導體晶片3之前，在半導體晶圓利用形成積體電路的工程來形成。因此，像半導體裝置SP9那樣的半導體封裝是被稱為WPP(Wafer Process Package)。
另一方面，WPP型的半導體封裝所搭載的配線基板2是亦可與上述實施形態同樣的構造，但大多情況是按焊錫材SD1的每個連接部分形成開口部Sk1。又，如圖32所示般，配線基板2側的端子即接合指(接合焊墊)2BF的結合部的前端面BFt是以防焊膜SR1所覆蓋。以防焊膜SR1覆蓋端子的周緣部的構造是被稱為SMD(Solder Mask Defined)構造。
半導體裝置SP9的情況，由於形成SMD構造，因此上述突起電極佈局技術及配線彎曲技術難適用。但，線膨脹係數調整技術可適用。亦即，防焊膜SR1的線膨脹係數為基材層2CR的線膨脹係數以上，防焊膜SR1的線膨脹係數為樹脂體4的線膨脹係數以下，且基材層2CR的線膨脹係數比樹脂體4的線膨脹係數更小。因此，可抑制在樹脂體4中發生圖34所示那樣的龜裂CLK1。並且，可抑制在龜裂CLK1進展下接合指2BF損傷的情形。
半導體裝置SP9的製造方法是在圖8所示的突起電極形成工程之前進行再配線層形成工程。再配線工程是形成包含圖32所示的再配線3RD的再配線層。並且，圖8所示的突起電極形成工程是形成由焊錫材SD1所構成的突起電極3BP，在半導體晶片準備工程中所含的焊錫材形成工程是被省略。
圖31所示的半導體裝置SP8及圖32所示的半導體裝置SP9是除了上述的相異點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
又，例如有像圖33所示的半導體裝置SP10那樣，以半導體晶片3的背面3b與配線基板2的上面2a能夠對向的方式，將半導體晶片3搭載於配線基板2上之所謂面朝上安裝方式的變形例。
像半導體裝置SP10那樣以面朝上安裝方式來搭載半導體晶片3時，半導體晶片3的焊墊3PD與配線基板2的接合指2BF是經由導電性構件即接線BW來電性連接。並且，半導體裝置SP10的情況，樹脂體4不具密封電性連接半導體晶片3與配線基板2的部分(亦即接線BW)的機能。樹脂體4是被要求作為將半導體晶片3黏著固定於配線基板2的黏著材之機能。並且，以接線BW來連接焊墊3PD與接合指2BF時，因為需要形成線環(wire loop)形狀，所以接合指2BF的結合部是配置於比搭載半導體晶片3的領域更周緣部側，在半導體晶片3之間需要某程度的距離。因此，如圖33所示般，面朝上安裝方式的半導體裝置SP10的情況，大多是在開口部Sk1內未埋入樹脂體4的情況。
因此，在上述實施形態說明的課題之中，產生圖34所示的龜裂CLK1的課題是不易發生。並且，在利用圖34來說明之接合指2BF被拉至防焊膜SR1的方向之下，在接合部產生應力的現象會發生。但，由於接線BW是比在上述實施形態說明的突起電極3BP更長延伸距離，所以藉由接線BW本身變形，可緩和某程度的應力。因此，上述突起電極佈局技術及配線部彎曲技術是在藉由覆晶連接方 式來將半導體晶片3搭載於配線基板2時可取得特別大的效果之技術。
但，有關擔心起因於溫度循環負荷，而在樹脂體4與防焊膜SR1的密著界面發生剝離的課題是在半導體裝置SP10的情況也有發生的可能性。又，由於樹脂體4是黏著固定半導體晶片3的構件，因此一旦從配線基板2剝離，則形成半導體裝置SP10的可靠度降低的原因。於是，最好適用上述線膨脹係數調整技術。
又，由於圖33所示的半導體裝置SP10是需要密封複數的接線BW來加以保護，因此形成有密封半導體晶片3及複數的接線BW之密封體(樹脂體)5。防焊膜SR1的開口部Sk1內是藉由此密封體5來堵塞。
並且，圖33所示的半導體裝置SP10製造方法是以下的點與圖8所示的工程不同。亦即，在半導體準備工程中，突起電極形成工程及焊錫材形成工程會被省略。並且，在半導體晶片工程中，半導體晶片3會經由作為黏著材的樹脂體4來以面朝上安裝方式搭載於配線基板2的上面2a上。並且，在半導體晶片搭載工程與密封工程之間，追加有電性連接半導體晶片3與配線基板2之打線接合工程。並且，在密封工程中，以能夠覆蓋半導體晶片3及複數的接線BW之方式供給樹脂，形成密封體5。
圖33所示的半導體裝置SP10是除了上述的不同點以外，與在上述實施形態說明的半導體裝置SP1同樣，因此省略重複的說明。
<變形例6>
並且，可在不脫離上述實施形態說明的技術思想要旨的範圍內組合變形例彼此間加以適用。
並且，有關在實施形態或其變形例說明的半導體裝置及半導體裝置的製造方法，若抽出技術的思想，則可表現成如下述般。
[附記1]
一種半導體裝置，其係包含：配線基板，其係具備：基材層，形成於前述基材層的第1面的複數的第1端子，及覆蓋前述基材層的前述第1面的第1絕緣層；半導體晶片，其係具有：表面，前述表面的相反側的背面，及形成於前述表面的複數的接合焊墊，及分別形成於前述複數的接合焊墊上的複數的突起電極，在前述表面與前述配線基板的前述第1面對向的狀態下，經由前述複數的突起電極來搭載於前述配線基板；複數的焊錫材，其細分別連接前述複數的突起電極與前述複數的第1端子；及第2絕緣層，其細配置於前述配線基板與前述半導體晶片之間，密封前述複數的突起電極與前述複數的第1端子的連接部分，及形成於前述第1絕緣層的第1開口部內， 前述複數的第1端子係分別從形成於前述第1絕緣層的前述第1開口部露出，前述複數的第1端子係分別具有：結合部，其係形成於前述第1開口部內；及配線部，其係從前述結合部往前述第1絕緣層延伸，一部分被前述第1絕緣層所覆蓋，前述配線部係於前述結合部與被前述第1絕緣層所覆蓋的部分之間具有延伸方向變化的變曲點。
[附記2]
一種半導體裝置的製造方法，係具有以下的工程：(a)準備配線基板的工程，該配線基板係具備：基材層，形成於前述基材層的第1面的複數的第1端子，及覆蓋前述基材層的前述第1面的第1絕緣層；(b)準備半導體晶片的工程，該半導體晶片係具備：表面，前述表面的相反側的背面，形成於前述表面的複數的接合焊墊，及形成於前述半導體晶片的前述表面側，分別與前述複數的接合焊墊電性連接的複數的突起電極；及(c)在前述(a)工程及前述(b)工程之後，將前述半導體晶片經由第2絕緣層來搭載於前述配線基板的前述第1面側的工程；在此，前述複數的第1端子係分別從形成於前述第1絕緣層的第1開口部露出， 前述配線基板的前述基材層及前述第1絕緣層係分別由複數的填料粒子及含有玻璃纖維的樹脂所構成，前述第1絕緣層的線膨脹係數為前述基材層的線膨脹係數以上，且前述第1絕緣層的線膨脹係數為前述第2絕緣層的線膨脹係數以下，且前述基材層的線膨脹係數比前述第2絕緣層的線膨脹係數更小。
2‧‧‧配線基板
2BF‧‧‧接合指(端子、電極、內部介面端子、接合焊墊)
2CR‧‧‧基材層(核心層、絕緣層)
2CRa‧‧‧第1面、主面、接合指形成面)
3‧‧‧半導體晶片
3a‧‧‧表面(主面、上面)
3BP‧‧‧突起電極(導電性構件、柱凸塊、柱形凸塊、焊錫凸塊)
3F、3F1、3F2‧‧‧絕緣膜
3Fk‧‧‧開口部
3PD‧‧‧焊墊(接合焊墊、電極、電極焊墊)
3UB‧‧‧底層金屬膜(底部凸塊金屬)
4‧‧‧樹脂體(絕緣層、底部填充材、密封材、黏著材、黏晶材)
BPt‧‧‧前端面
BFt‧‧‧前端面(前端邊)
GC‧‧‧玻璃纖維(纖維材料)
SD1‧‧‧焊錫材
Sk1‧‧‧開口部
SP1‧‧‧半導體裝置(半導體封裝)
SR1‧‧‧防焊膜(絕緣層)
ST2‧‧‧箭號(拉伸力)

Claims (12)

  1. 一種半導體裝置，其特徵係包含：配線基板，其係具備：基材層，形成於前述基材層的第1面的複數的第1端子，及覆蓋前述基材層的前述第1面的第1絕緣層；半導體晶片，其係具有：表面，前述表面的相反側的背面，及形成於前述表面的複數的接合焊墊，且被搭載於前述第1絕緣層上；第2絕緣層，其係配置於前述配線基板與前述半導體晶片之間，分別密著於前述第1絕緣層及前述半導體晶片，前述複數的第1端子係分別從形成於前述第1絕緣層的第1開口部露出，前述配線基板的前述基材層及前述第1絕緣層係分別由複數的填料粒子及含有玻璃纖維的樹脂所構成，前述第1絕緣層的線膨脹係數為前述基材層的線膨脹係數以上，且前述第1絕緣層的線膨脹係數為前述第2絕緣層的線膨脹係數以下，且前述基材層的線膨脹係數比前述第2絕緣層的線膨脹係數更小。
  2. 如申請專利範圍第1項之半導體裝置，其中，前述半導體晶片係於前述表面側與前述配線基板的前述第1面側對向的狀態下，經由與前述複數的接合焊墊電性連接的複數的突起電極來搭載於前述配線基板，前述複數的突起電極與前述複數的第1端子的連接部分，及前述第1絕緣層的前述第1開口部內係藉由前述第2 絕緣層來密封。
  3. 如申請專利範圍第2項之半導體裝置，其中，前述複數的突起電極係形成於前述複數的接合焊墊上，經由複數的焊錫材來與前述複數的第1端子電性連接，前述複數的突起電極係以和前述複數的焊錫材不同的材料所形成。
  4. 如申請專利範圍第3項之半導體裝置，其中，前述複數的第1端子係分別具有結合部，該結合部係具有形成於前述第1開口部內的前端邊，平面視，前述複數的突起電極係分別與前述複數的第1端子所具有的結合部的前端邊重疊。
  5. 如申請專利範圍第2項之半導體裝置，其中，前述複數的第1端子係分別具有：結合部，其係形成於前述第1開口部內；及配線部，其係從前述結合部往前述第1絕緣層延伸，一部分係被前述第1絕緣層所覆蓋，前述配線部係於前述結合部與被前述第1絕緣層所覆蓋的前述配線部的一部分之間具有延伸方向變化的變曲點。
  6. 如申請專利範圍第5項之半導體裝置，其中，與前述配線部的延伸方向正交的方向的寬度係比前述結合部的寬度更小。
  7. 如申請專利範圍第3項之半導體裝置，其中，前述複數的突起電極係經由形成於前述複數的接合焊墊上的複數的底層導電膜來與前述複數的接合焊墊連接， 前述複數的突起電極係經由前述複數的底層導電膜來形成於前述複數的接合焊墊上。
  8. 如申請專利範圍第1項之半導體裝置，其中，前述配線基板係具備：前述複數的第1端子；複數的第2端子，其係形成於與前述第1面相反側的前述基材層的第2面，分別與前述複數的第1端子電性連接；第3絕緣層，其係覆蓋前述基材層的前述第2面；及第2開口部，其係形成於前述第3絕緣層，使前述複數的第2端子分別露出，前述第3絕緣層係以複數的填料粒子，及含有玻璃纖維的樹脂所形成，前述第3絕緣層的線膨脹係數為前述基材層的線膨脹係數以上。
  9. 一種半導體裝置的製造方法，其特徵係具有以下的工程：(a)準備配線基板的工程，該配線基板係具備：基材層，形成於前述基材層的第1面的複數的第1端子，及覆蓋前述基材層的前述第1面的第1絕緣層；(b)準備半導體晶片的工程，該半導體晶片係具備：表面，前述表面的相反側的背面，形成於前述表面的複數的接合焊墊，及形成於前述表面側，分別與前述複數的接合焊墊電性連接的複數的突起電極；(c)在前述(a)工程及前述(b)工程之後，以前 述半導體晶片的前述表面能夠與前述配線基板的前述第1面對向之方式，將前述半導體晶片搭載於前述配線基板，電性連接前述複數的突起電極與前述複數的第1端子之工程；(d)在前述(c)工程之後，對前述配線基板與前述半導體晶片之間供給樹脂，形成分別密著於前述第1絕緣層及前述半導體晶片的第2絕緣層之工程；在此，前述複數的第1端子係分別從形成於前述第1絕緣層的第1開口部露出，前述配線基板的前述基材層及前述第1絕緣層係分別由複數的填料粒子及含有玻璃纖維的樹脂所構成，前述第1絕緣層的線膨脹係數為前述基材層的線膨脹係數以上，且前述第1絕緣層的線膨脹係數為前述第2絕緣層的線膨脹係數以下，且前述基材層的線膨脹係數比前述第2絕緣層的線膨脹係數更小。
  10. 如申請專利範圍第9項之半導體裝置的製造方法，其中，在前述(a)工程所準備的配線基板的前述複數的第1端子的露出面係分別形成有複數的第1焊錫材，在前述(b)工程所準備的前述半導體晶片的前述複數的突起電極的前端面係分別形成有複數的第2焊錫材，在前述(c)工程，將前述複數的第1焊錫材與前述複數的第2焊錫材加熱而使一體化，藉此電性連接前述複數的突起電極與前述複數的第1端子。
  11. 如申請專利範圍第10項之半導體裝置的製造方 法，其中，在前述(a)工程所準備的前述配線基板的前述複數的第1端子係分別具有：結合部，其係具有形成於前述第1開口部內的前端邊；及配線部，其係從前述結合部往與前述前端邊相反的方向延伸，一部分係以前述第1絕緣層所覆蓋，在前述(c)工程，平面視，前述複數的突起電極係以和前述複數的第1端子的前端邊分別重疊的狀態來固定前述半導體晶片。
  12. 如申請專利範圍第10項之半導體裝置的製造方法，其中，在前述(a)工程所準備的前述配線基板的前述複數的第1端子係分別具有：結合部，其係形成於前述第1開口部內；配線部，其係從前述結合部往前述第1絕緣層延伸，一部分係被前述第1絕緣層所覆蓋，前述配線部係於前述結合部與被前述第1絕緣層所覆蓋的部分之間具有延伸方向變化的變曲點。
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