TWI612652B - 光電轉換裝置及影像讀取裝置 - Google Patents
光電轉換裝置及影像讀取裝置 Download PDFInfo
- Publication number
- TWI612652B TWI612652B TW106115855A TW106115855A TWI612652B TW I612652 B TWI612652 B TW I612652B TW 106115855 A TW106115855 A TW 106115855A TW 106115855 A TW106115855 A TW 106115855A TW I612652 B TWI612652 B TW I612652B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor region
- photoelectric conversion
- conversion device
- semiconductor
- main surface
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 180
- 239000004065 semiconductor Substances 0.000 claims abstract description 523
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000012212 insulator Substances 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims description 69
- 238000002955 isolation Methods 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000994 depressogenic effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016103716A JP6711692B2 (ja) | 2016-05-24 | 2016-05-24 | 光電変換装置及び画像読み取り装置 |
| JP2016-103716 | 2016-05-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201742239A TW201742239A (zh) | 2017-12-01 |
| TWI612652B true TWI612652B (zh) | 2018-01-21 |
Family
ID=58992647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106115855A TWI612652B (zh) | 2016-05-24 | 2017-05-12 | 光電轉換裝置及影像讀取裝置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10103182B2 (https=) |
| EP (1) | EP3249690B1 (https=) |
| JP (1) | JP6711692B2 (https=) |
| KR (1) | KR20170132679A (https=) |
| CN (1) | CN107425029B (https=) |
| BR (1) | BR102017010780A2 (https=) |
| RU (1) | RU2672765C2 (https=) |
| TW (1) | TWI612652B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7157555B2 (ja) * | 2018-05-24 | 2022-10-20 | キヤノン株式会社 | 画像形成装置 |
| KR102889667B1 (ko) | 2021-02-26 | 2025-11-21 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2026002625A (ja) * | 2024-06-21 | 2026-01-08 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201125113A (en) * | 2009-12-14 | 2011-07-16 | Canon Kk | Photoelectric conversion device |
| TW201227830A (en) * | 2010-08-16 | 2012-07-01 | Semiconductor Energy Lab | Manufacturing method of semiconductor device |
| TW201517258A (zh) * | 2013-10-31 | 2015-05-01 | 三星電子股份有限公司 | 影像感測器以及影像感測器系統 |
| TW201517255A (zh) * | 2013-10-16 | 2015-05-01 | Seiko Epson Corp | 半導體裝置及其製造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472557A (en) * | 1987-09-11 | 1989-03-17 | Seiko Instr & Electronics | Image sensor |
| JP3311564B2 (ja) | 1995-11-29 | 2002-08-05 | 三洋電機株式会社 | 光半導体装置 |
| US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
| US6590242B1 (en) | 1999-02-25 | 2003-07-08 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| JP4241527B2 (ja) * | 1999-02-25 | 2009-03-18 | キヤノン株式会社 | 光電変換素子 |
| JP2001007380A (ja) | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
| JP2003249639A (ja) * | 2002-02-22 | 2003-09-05 | Sony Corp | 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法 |
| JP4442157B2 (ja) * | 2003-08-20 | 2010-03-31 | ソニー株式会社 | 光電変換装置及び固体撮像装置 |
| JP4418720B2 (ja) * | 2003-11-21 | 2010-02-24 | キヤノン株式会社 | 放射線撮像装置及び方法、並びに放射線撮像システム |
| JP4873964B2 (ja) * | 2006-03-03 | 2012-02-08 | セイコーインスツル株式会社 | 光電変換装置およびイメージセンサ |
| US20070249138A1 (en) * | 2006-04-24 | 2007-10-25 | Micron Technology, Inc. | Buried dielectric slab structure for CMOS imager |
| JP2009218357A (ja) * | 2008-03-10 | 2009-09-24 | Panasonic Corp | 固体撮像素子 |
| JP5283965B2 (ja) * | 2008-05-09 | 2013-09-04 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
| JP5406537B2 (ja) * | 2009-01-13 | 2014-02-05 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
| JP2012019056A (ja) * | 2010-07-07 | 2012-01-26 | Canon Inc | 固体撮像装置及び撮像システム |
| JP5888985B2 (ja) * | 2011-02-09 | 2016-03-22 | キヤノン株式会社 | 光電変換素子、およびこれを用いた光電変換装置、撮像システム |
| JP2013021014A (ja) | 2011-07-07 | 2013-01-31 | Canon Inc | エネルギー線検出装置の製造方法 |
| TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
| US9082905B2 (en) * | 2012-02-15 | 2015-07-14 | Texas Instruments Incorporated | Photodiode employing surface grating to enhance sensitivity |
| JP2014049575A (ja) * | 2012-08-30 | 2014-03-17 | Sony Corp | 撮像素子、撮像装置、製造装置および方法 |
-
2016
- 2016-05-24 JP JP2016103716A patent/JP6711692B2/ja active Active
-
2017
- 2017-05-12 TW TW106115855A patent/TWI612652B/zh active
- 2017-05-12 RU RU2017116607A patent/RU2672765C2/ru active
- 2017-05-18 US US15/599,140 patent/US10103182B2/en active Active
- 2017-05-23 KR KR1020170063234A patent/KR20170132679A/ko not_active Abandoned
- 2017-05-23 BR BR102017010780-9A patent/BR102017010780A2/pt not_active IP Right Cessation
- 2017-05-24 CN CN201710370871.6A patent/CN107425029B/zh active Active
- 2017-05-24 EP EP17172711.8A patent/EP3249690B1/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201125113A (en) * | 2009-12-14 | 2011-07-16 | Canon Kk | Photoelectric conversion device |
| TW201227830A (en) * | 2010-08-16 | 2012-07-01 | Semiconductor Energy Lab | Manufacturing method of semiconductor device |
| TW201517255A (zh) * | 2013-10-16 | 2015-05-01 | Seiko Epson Corp | 半導體裝置及其製造方法 |
| TW201517258A (zh) * | 2013-10-31 | 2015-05-01 | 三星電子股份有限公司 | 影像感測器以及影像感測器系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3249690A2 (en) | 2017-11-29 |
| CN107425029B (zh) | 2022-01-28 |
| US10103182B2 (en) | 2018-10-16 |
| KR20170132679A (ko) | 2017-12-04 |
| US20170345857A1 (en) | 2017-11-30 |
| JP2017212304A (ja) | 2017-11-30 |
| RU2017116607A3 (https=) | 2018-11-14 |
| BR102017010780A2 (pt) | 2017-12-12 |
| EP3249690B1 (en) | 2021-07-21 |
| EP3249690A3 (en) | 2018-03-07 |
| JP6711692B2 (ja) | 2020-06-17 |
| RU2672765C2 (ru) | 2018-11-19 |
| TW201742239A (zh) | 2017-12-01 |
| CN107425029A (zh) | 2017-12-01 |
| RU2017116607A (ru) | 2018-11-14 |
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