BR102017010780A2 - Photoelectric conversion apparatus and image reading device - Google Patents
Photoelectric conversion apparatus and image reading device Download PDFInfo
- Publication number
- BR102017010780A2 BR102017010780A2 BR102017010780-9A BR102017010780A BR102017010780A2 BR 102017010780 A2 BR102017010780 A2 BR 102017010780A2 BR 102017010780 A BR102017010780 A BR 102017010780A BR 102017010780 A2 BR102017010780 A2 BR 102017010780A2
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor region
- semiconductor
- photoelectric conversion
- main surface
- recessed portions
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 143
- 239000004065 semiconductor Substances 0.000 claims abstract description 479
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000012535 impurity Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000033001 locomotion Effects 0.000 description 24
- 238000002955 isolation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016103716A JP6711692B2 (ja) | 2016-05-24 | 2016-05-24 | 光電変換装置及び画像読み取り装置 |
| JP2016-103716 | 2016-05-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR102017010780A2 true BR102017010780A2 (pt) | 2017-12-12 |
Family
ID=58992647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR102017010780-9A BR102017010780A2 (pt) | 2016-05-24 | 2017-05-23 | Photoelectric conversion apparatus and image reading device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10103182B2 (https=) |
| EP (1) | EP3249690B1 (https=) |
| JP (1) | JP6711692B2 (https=) |
| KR (1) | KR20170132679A (https=) |
| CN (1) | CN107425029B (https=) |
| BR (1) | BR102017010780A2 (https=) |
| RU (1) | RU2672765C2 (https=) |
| TW (1) | TWI612652B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7157555B2 (ja) * | 2018-05-24 | 2022-10-20 | キヤノン株式会社 | 画像形成装置 |
| KR102889667B1 (ko) | 2021-02-26 | 2025-11-21 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2026002625A (ja) * | 2024-06-21 | 2026-01-08 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472557A (en) * | 1987-09-11 | 1989-03-17 | Seiko Instr & Electronics | Image sensor |
| JP3311564B2 (ja) | 1995-11-29 | 2002-08-05 | 三洋電機株式会社 | 光半導体装置 |
| US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
| US6590242B1 (en) | 1999-02-25 | 2003-07-08 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| JP4241527B2 (ja) * | 1999-02-25 | 2009-03-18 | キヤノン株式会社 | 光電変換素子 |
| JP2001007380A (ja) | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
| JP2003249639A (ja) * | 2002-02-22 | 2003-09-05 | Sony Corp | 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法 |
| JP4442157B2 (ja) * | 2003-08-20 | 2010-03-31 | ソニー株式会社 | 光電変換装置及び固体撮像装置 |
| JP4418720B2 (ja) * | 2003-11-21 | 2010-02-24 | キヤノン株式会社 | 放射線撮像装置及び方法、並びに放射線撮像システム |
| JP4873964B2 (ja) * | 2006-03-03 | 2012-02-08 | セイコーインスツル株式会社 | 光電変換装置およびイメージセンサ |
| US20070249138A1 (en) * | 2006-04-24 | 2007-10-25 | Micron Technology, Inc. | Buried dielectric slab structure for CMOS imager |
| JP2009218357A (ja) * | 2008-03-10 | 2009-09-24 | Panasonic Corp | 固体撮像素子 |
| JP5283965B2 (ja) * | 2008-05-09 | 2013-09-04 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
| JP5406537B2 (ja) * | 2009-01-13 | 2014-02-05 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
| JP2011124522A (ja) * | 2009-12-14 | 2011-06-23 | Canon Inc | 光電変換装置 |
| JP2012019056A (ja) * | 2010-07-07 | 2012-01-26 | Canon Inc | 固体撮像装置及び撮像システム |
| TWI621184B (zh) * | 2010-08-16 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置之製造方法 |
| JP5888985B2 (ja) * | 2011-02-09 | 2016-03-22 | キヤノン株式会社 | 光電変換素子、およびこれを用いた光電変換装置、撮像システム |
| JP2013021014A (ja) | 2011-07-07 | 2013-01-31 | Canon Inc | エネルギー線検出装置の製造方法 |
| TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
| US9082905B2 (en) * | 2012-02-15 | 2015-07-14 | Texas Instruments Incorporated | Photodiode employing surface grating to enhance sensitivity |
| JP2014049575A (ja) * | 2012-08-30 | 2014-03-17 | Sony Corp | 撮像素子、撮像装置、製造装置および方法 |
| JP6232914B2 (ja) * | 2013-10-16 | 2017-11-22 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
| KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
-
2016
- 2016-05-24 JP JP2016103716A patent/JP6711692B2/ja active Active
-
2017
- 2017-05-12 TW TW106115855A patent/TWI612652B/zh active
- 2017-05-12 RU RU2017116607A patent/RU2672765C2/ru active
- 2017-05-18 US US15/599,140 patent/US10103182B2/en active Active
- 2017-05-23 KR KR1020170063234A patent/KR20170132679A/ko not_active Abandoned
- 2017-05-23 BR BR102017010780-9A patent/BR102017010780A2/pt not_active IP Right Cessation
- 2017-05-24 CN CN201710370871.6A patent/CN107425029B/zh active Active
- 2017-05-24 EP EP17172711.8A patent/EP3249690B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3249690A2 (en) | 2017-11-29 |
| CN107425029B (zh) | 2022-01-28 |
| US10103182B2 (en) | 2018-10-16 |
| KR20170132679A (ko) | 2017-12-04 |
| US20170345857A1 (en) | 2017-11-30 |
| JP2017212304A (ja) | 2017-11-30 |
| RU2017116607A3 (https=) | 2018-11-14 |
| EP3249690B1 (en) | 2021-07-21 |
| TWI612652B (zh) | 2018-01-21 |
| EP3249690A3 (en) | 2018-03-07 |
| JP6711692B2 (ja) | 2020-06-17 |
| RU2672765C2 (ru) | 2018-11-19 |
| TW201742239A (zh) | 2017-12-01 |
| CN107425029A (zh) | 2017-12-01 |
| RU2017116607A (ru) | 2018-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9508871B2 (en) | Solid-state image sensing device with electrode implanted into deep trench | |
| JP7361452B2 (ja) | 撮像装置およびカメラ | |
| JP6198485B2 (ja) | 光電変換装置、及び撮像システム | |
| JP6650668B2 (ja) | 固体撮像装置 | |
| KR20190108470A (ko) | 수광 장치, 및 수광 장치의 제조 방법 | |
| BR102017010780A2 (pt) | Photoelectric conversion apparatus and image reading device | |
| US9472706B2 (en) | Image sensor having a plurality of phototransistors separated by trench-gate structures and method of manufacturing the same | |
| JP6445799B2 (ja) | 光電変換装置 | |
| US9472590B2 (en) | Solid-state image capturing device and manufacturing method thereof | |
| US10453878B2 (en) | Photoelectric conversion apparatus and image-reading apparatus | |
| US10103279B2 (en) | High voltage PIN diode | |
| US9679939B1 (en) | Backside illuminated image sensor device | |
| CN214254428U (zh) | 像素结构、红外图像传感器和电子设备 | |
| US20230022384A1 (en) | Multiplying image sensor | |
| CN109983582B (zh) | 摄像元件及摄像元件的制造方法 | |
| CN112864258B (zh) | 像素结构、红外图像传感器和电子设备 | |
| JP2022131332A (ja) | 半導体装置 | |
| KR20230112621A (ko) | 광전 변환 장치 | |
| CN100433349C (zh) | 有源像素传感器 | |
| JP2022134417A (ja) | フォトダイオード | |
| TW202038454A (zh) | 半導體元件及半導體元件之製造方法 | |
| CN110710000A (zh) | 具有免受环境背光影响的保护的半导体光检测器器件 | |
| JP2017152439A (ja) | 半導体装置、および、半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B03A | Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette] | ||
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 5A ANUIDADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2672 DE 22-03-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |