CN107425029B - 光电转换装置和图像读取装置 - Google Patents

光电转换装置和图像读取装置 Download PDF

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Publication number
CN107425029B
CN107425029B CN201710370871.6A CN201710370871A CN107425029B CN 107425029 B CN107425029 B CN 107425029B CN 201710370871 A CN201710370871 A CN 201710370871A CN 107425029 B CN107425029 B CN 107425029B
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China
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semiconductor region
photoelectric conversion
main surface
semiconductor
conversion device
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Chinese (zh)
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CN107425029A (zh
Inventor
铃木达也
小泉彻
小仓正徳
铃木隆典
伊庭润
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
CN201710370871.6A 2016-05-24 2017-05-24 光电转换装置和图像读取装置 Active CN107425029B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016103716A JP6711692B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置
JP2016-103716 2016-05-24

Publications (2)

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CN107425029A CN107425029A (zh) 2017-12-01
CN107425029B true CN107425029B (zh) 2022-01-28

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US (1) US10103182B2 (https=)
EP (1) EP3249690B1 (https=)
JP (1) JP6711692B2 (https=)
KR (1) KR20170132679A (https=)
CN (1) CN107425029B (https=)
BR (1) BR102017010780A2 (https=)
RU (1) RU2672765C2 (https=)
TW (1) TWI612652B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157555B2 (ja) * 2018-05-24 2022-10-20 キヤノン株式会社 画像形成装置
KR102889667B1 (ko) 2021-02-26 2025-11-21 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2026002625A (ja) * 2024-06-21 2026-01-08 キヤノン株式会社 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法

Citations (4)

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JP2004312039A (ja) * 1999-02-25 2004-11-04 Canon Inc 光電変換素子
EP2333834A2 (en) * 2009-12-14 2011-06-15 Canon Kabushiki Kaisha Photoelectric conversion device
CN103681710A (zh) * 2012-08-30 2014-03-26 索尼公司 图像传感器、成像装置以及制造图像传感器的装置和方法

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JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP3311564B2 (ja) 1995-11-29 2002-08-05 三洋電機株式会社 光半導体装置
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP2001007380A (ja) 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) * 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP4873964B2 (ja) * 2006-03-03 2012-02-08 セイコーインスツル株式会社 光電変換装置およびイメージセンサ
US20070249138A1 (en) * 2006-04-24 2007-10-25 Micron Technology, Inc. Buried dielectric slab structure for CMOS imager
JP2009218357A (ja) * 2008-03-10 2009-09-24 Panasonic Corp 固体撮像素子
JP5283965B2 (ja) * 2008-05-09 2013-09-04 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5406537B2 (ja) * 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2012019056A (ja) * 2010-07-07 2012-01-26 Canon Inc 固体撮像装置及び撮像システム
TWI621184B (zh) * 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP5888985B2 (ja) * 2011-02-09 2016-03-22 キヤノン株式会社 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP2013021014A (ja) 2011-07-07 2013-01-31 Canon Inc エネルギー線検出装置の製造方法
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
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JP6232914B2 (ja) * 2013-10-16 2017-11-22 セイコーエプソン株式会社 半導体装置およびその製造方法
KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서

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JP2004312039A (ja) * 1999-02-25 2004-11-04 Canon Inc 光電変換素子
CN1308377A (zh) * 1999-12-01 2001-08-15 伊诺太科株式会社 固态成像器件及其制造方法和固态成像系统
EP2333834A2 (en) * 2009-12-14 2011-06-15 Canon Kabushiki Kaisha Photoelectric conversion device
CN103681710A (zh) * 2012-08-30 2014-03-26 索尼公司 图像传感器、成像装置以及制造图像传感器的装置和方法

Also Published As

Publication number Publication date
EP3249690A2 (en) 2017-11-29
US10103182B2 (en) 2018-10-16
KR20170132679A (ko) 2017-12-04
US20170345857A1 (en) 2017-11-30
JP2017212304A (ja) 2017-11-30
RU2017116607A3 (https=) 2018-11-14
BR102017010780A2 (pt) 2017-12-12
EP3249690B1 (en) 2021-07-21
TWI612652B (zh) 2018-01-21
EP3249690A3 (en) 2018-03-07
JP6711692B2 (ja) 2020-06-17
RU2672765C2 (ru) 2018-11-19
TW201742239A (zh) 2017-12-01
CN107425029A (zh) 2017-12-01
RU2017116607A (ru) 2018-11-14

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