RU2672765C2 - Устройство фотоэлектрического преобразования и устройство считывания изображения - Google Patents

Устройство фотоэлектрического преобразования и устройство считывания изображения Download PDF

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RU2672765C2
RU2672765C2 RU2017116607A RU2017116607A RU2672765C2 RU 2672765 C2 RU2672765 C2 RU 2672765C2 RU 2017116607 A RU2017116607 A RU 2017116607A RU 2017116607 A RU2017116607 A RU 2017116607A RU 2672765 C2 RU2672765 C2 RU 2672765C2
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semiconductor region
photoelectric conversion
conversion device
main surface
semiconductor
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RU2017116607A
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English (en)
Russian (ru)
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RU2017116607A3 (https=
RU2017116607A (ru
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Тацуя СУДЗУКИ
Тору КОИДЗУМИ
Масанори ОГУРА
Таканори СУДЗУКИ
Дзун ИБА
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Кэнон Кабусики Кайся
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
RU2017116607A 2016-05-24 2017-05-12 Устройство фотоэлектрического преобразования и устройство считывания изображения RU2672765C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016103716A JP6711692B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置
JP2016-103716 2016-05-24

Publications (3)

Publication Number Publication Date
RU2017116607A3 RU2017116607A3 (https=) 2018-11-14
RU2017116607A RU2017116607A (ru) 2018-11-14
RU2672765C2 true RU2672765C2 (ru) 2018-11-19

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RU2017116607A RU2672765C2 (ru) 2016-05-24 2017-05-12 Устройство фотоэлектрического преобразования и устройство считывания изображения

Country Status (8)

Country Link
US (1) US10103182B2 (https=)
EP (1) EP3249690B1 (https=)
JP (1) JP6711692B2 (https=)
KR (1) KR20170132679A (https=)
CN (1) CN107425029B (https=)
BR (1) BR102017010780A2 (https=)
RU (1) RU2672765C2 (https=)
TW (1) TWI612652B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157555B2 (ja) * 2018-05-24 2022-10-20 キヤノン株式会社 画像形成装置
KR102889667B1 (ko) 2021-02-26 2025-11-21 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2026002625A (ja) * 2024-06-21 2026-01-08 キヤノン株式会社 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法

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US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP2001007380A (ja) 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) * 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US20070249138A1 (en) * 2006-04-24 2007-10-25 Micron Technology, Inc. Buried dielectric slab structure for CMOS imager
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JP5406537B2 (ja) * 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
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JP2004312039A (ja) * 1999-02-25 2004-11-04 Canon Inc 光電変換素子
RU2325780C2 (ru) * 2003-11-21 2008-05-27 Кэнон Кабусики Кайся Устройство и способ считывания изображения излучения и система считывания изображения излучения
US20070210396A1 (en) * 2006-03-03 2007-09-13 Toshihiko Omi Photoelectric conversion device and image sensor
WO2009136665A1 (en) * 2008-05-09 2009-11-12 Canon Kabushiki Kaisha Photoelectric conversion apparatus and imaging system using the same
JP2011124522A (ja) * 2009-12-14 2011-06-23 Canon Inc 光電変換装置
RU2497234C2 (ru) * 2011-02-09 2013-10-27 Кэнон Кабусики Кайся Фотоэлектрический преобразующий элемент, фотоэлектрическое преобразующее устройство и система для считывания изображений

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Publication number Publication date
EP3249690A2 (en) 2017-11-29
CN107425029B (zh) 2022-01-28
US10103182B2 (en) 2018-10-16
KR20170132679A (ko) 2017-12-04
US20170345857A1 (en) 2017-11-30
JP2017212304A (ja) 2017-11-30
RU2017116607A3 (https=) 2018-11-14
BR102017010780A2 (pt) 2017-12-12
EP3249690B1 (en) 2021-07-21
TWI612652B (zh) 2018-01-21
EP3249690A3 (en) 2018-03-07
JP6711692B2 (ja) 2020-06-17
TW201742239A (zh) 2017-12-01
CN107425029A (zh) 2017-12-01
RU2017116607A (ru) 2018-11-14

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