RU2017116607A3 - - Google Patents

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Publication number
RU2017116607A3
RU2017116607A3 RU2017116607A RU2017116607A RU2017116607A3 RU 2017116607 A3 RU2017116607 A3 RU 2017116607A3 RU 2017116607 A RU2017116607 A RU 2017116607A RU 2017116607 A RU2017116607 A RU 2017116607A RU 2017116607 A3 RU2017116607 A3 RU 2017116607A3
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RU
Russia
Application number
RU2017116607A
Other languages
Russian (ru)
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RU2672765C2 (ru
RU2017116607A (ru
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of RU2017116607A3 publication Critical patent/RU2017116607A3/ru
Publication of RU2017116607A publication Critical patent/RU2017116607A/ru
Application granted granted Critical
Publication of RU2672765C2 publication Critical patent/RU2672765C2/ru

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024Details of scanning heads ; Means for illuminating the original
    • H04N1/028Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033Photosensitive area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/807Pixel isolation structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024Details of scanning heads ; Means for illuminating the original
    • H04N1/028Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
RU2017116607A 2016-05-24 2017-05-12 Устройство фотоэлектрического преобразования и устройство считывания изображения RU2672765C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016103716A JP6711692B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置
JP2016-103716 2016-05-24

Publications (3)

Publication Number Publication Date
RU2017116607A3 true RU2017116607A3 (https=) 2018-11-14
RU2017116607A RU2017116607A (ru) 2018-11-14
RU2672765C2 RU2672765C2 (ru) 2018-11-19

Family

ID=58992647

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2017116607A RU2672765C2 (ru) 2016-05-24 2017-05-12 Устройство фотоэлектрического преобразования и устройство считывания изображения

Country Status (8)

Country Link
US (1) US10103182B2 (https=)
EP (1) EP3249690B1 (https=)
JP (1) JP6711692B2 (https=)
KR (1) KR20170132679A (https=)
CN (1) CN107425029B (https=)
BR (1) BR102017010780A2 (https=)
RU (1) RU2672765C2 (https=)
TW (1) TWI612652B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157555B2 (ja) * 2018-05-24 2022-10-20 キヤノン株式会社 画像形成装置
KR102889667B1 (ko) 2021-02-26 2025-11-21 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2026002625A (ja) * 2024-06-21 2026-01-08 キヤノン株式会社 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法

Family Cites Families (25)

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JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP3311564B2 (ja) 1995-11-29 2002-08-05 三洋電機株式会社 光半導体装置
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP4241527B2 (ja) * 1999-02-25 2009-03-18 キヤノン株式会社 光電変換素子
JP2001007380A (ja) 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) * 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP4873964B2 (ja) * 2006-03-03 2012-02-08 セイコーインスツル株式会社 光電変換装置およびイメージセンサ
US20070249138A1 (en) * 2006-04-24 2007-10-25 Micron Technology, Inc. Buried dielectric slab structure for CMOS imager
JP2009218357A (ja) * 2008-03-10 2009-09-24 Panasonic Corp 固体撮像素子
JP5283965B2 (ja) * 2008-05-09 2013-09-04 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5406537B2 (ja) * 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2011124522A (ja) * 2009-12-14 2011-06-23 Canon Inc 光電変換装置
JP2012019056A (ja) * 2010-07-07 2012-01-26 Canon Inc 固体撮像装置及び撮像システム
TWI621184B (zh) * 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP5888985B2 (ja) * 2011-02-09 2016-03-22 キヤノン株式会社 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP2013021014A (ja) 2011-07-07 2013-01-31 Canon Inc エネルギー線検出装置の製造方法
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
US9082905B2 (en) * 2012-02-15 2015-07-14 Texas Instruments Incorporated Photodiode employing surface grating to enhance sensitivity
JP2014049575A (ja) * 2012-08-30 2014-03-17 Sony Corp 撮像素子、撮像装置、製造装置および方法
JP6232914B2 (ja) * 2013-10-16 2017-11-22 セイコーエプソン株式会社 半導体装置およびその製造方法
KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
EP3249690A2 (en) 2017-11-29
CN107425029B (zh) 2022-01-28
US10103182B2 (en) 2018-10-16
KR20170132679A (ko) 2017-12-04
US20170345857A1 (en) 2017-11-30
JP2017212304A (ja) 2017-11-30
BR102017010780A2 (pt) 2017-12-12
EP3249690B1 (en) 2021-07-21
TWI612652B (zh) 2018-01-21
EP3249690A3 (en) 2018-03-07
JP6711692B2 (ja) 2020-06-17
RU2672765C2 (ru) 2018-11-19
TW201742239A (zh) 2017-12-01
CN107425029A (zh) 2017-12-01
RU2017116607A (ru) 2018-11-14

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