RU2017116607A3 - - Google Patents
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- Publication number
- RU2017116607A3 RU2017116607A3 RU2017116607A RU2017116607A RU2017116607A3 RU 2017116607 A3 RU2017116607 A3 RU 2017116607A3 RU 2017116607 A RU2017116607 A RU 2017116607A RU 2017116607 A RU2017116607 A RU 2017116607A RU 2017116607 A3 RU2017116607 A3 RU 2017116607A3
- Authority
- RU
- Russia
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016103716A JP6711692B2 (ja) | 2016-05-24 | 2016-05-24 | 光電変換装置及び画像読み取り装置 |
| JP2016-103716 | 2016-05-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2017116607A3 true RU2017116607A3 (https=) | 2018-11-14 |
| RU2017116607A RU2017116607A (ru) | 2018-11-14 |
| RU2672765C2 RU2672765C2 (ru) | 2018-11-19 |
Family
ID=58992647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2017116607A RU2672765C2 (ru) | 2016-05-24 | 2017-05-12 | Устройство фотоэлектрического преобразования и устройство считывания изображения |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10103182B2 (https=) |
| EP (1) | EP3249690B1 (https=) |
| JP (1) | JP6711692B2 (https=) |
| KR (1) | KR20170132679A (https=) |
| CN (1) | CN107425029B (https=) |
| BR (1) | BR102017010780A2 (https=) |
| RU (1) | RU2672765C2 (https=) |
| TW (1) | TWI612652B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7157555B2 (ja) * | 2018-05-24 | 2022-10-20 | キヤノン株式会社 | 画像形成装置 |
| KR102889667B1 (ko) | 2021-02-26 | 2025-11-21 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2026002625A (ja) * | 2024-06-21 | 2026-01-08 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472557A (en) * | 1987-09-11 | 1989-03-17 | Seiko Instr & Electronics | Image sensor |
| JP3311564B2 (ja) | 1995-11-29 | 2002-08-05 | 三洋電機株式会社 | 光半導体装置 |
| US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
| US6590242B1 (en) | 1999-02-25 | 2003-07-08 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| JP4241527B2 (ja) * | 1999-02-25 | 2009-03-18 | キヤノン株式会社 | 光電変換素子 |
| JP2001007380A (ja) | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
| JP2003249639A (ja) * | 2002-02-22 | 2003-09-05 | Sony Corp | 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法 |
| JP4442157B2 (ja) * | 2003-08-20 | 2010-03-31 | ソニー株式会社 | 光電変換装置及び固体撮像装置 |
| JP4418720B2 (ja) * | 2003-11-21 | 2010-02-24 | キヤノン株式会社 | 放射線撮像装置及び方法、並びに放射線撮像システム |
| JP4873964B2 (ja) * | 2006-03-03 | 2012-02-08 | セイコーインスツル株式会社 | 光電変換装置およびイメージセンサ |
| US20070249138A1 (en) * | 2006-04-24 | 2007-10-25 | Micron Technology, Inc. | Buried dielectric slab structure for CMOS imager |
| JP2009218357A (ja) * | 2008-03-10 | 2009-09-24 | Panasonic Corp | 固体撮像素子 |
| JP5283965B2 (ja) * | 2008-05-09 | 2013-09-04 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
| JP5406537B2 (ja) * | 2009-01-13 | 2014-02-05 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
| JP2011124522A (ja) * | 2009-12-14 | 2011-06-23 | Canon Inc | 光電変換装置 |
| JP2012019056A (ja) * | 2010-07-07 | 2012-01-26 | Canon Inc | 固体撮像装置及び撮像システム |
| TWI621184B (zh) * | 2010-08-16 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置之製造方法 |
| JP5888985B2 (ja) * | 2011-02-09 | 2016-03-22 | キヤノン株式会社 | 光電変換素子、およびこれを用いた光電変換装置、撮像システム |
| JP2013021014A (ja) | 2011-07-07 | 2013-01-31 | Canon Inc | エネルギー線検出装置の製造方法 |
| TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
| US9082905B2 (en) * | 2012-02-15 | 2015-07-14 | Texas Instruments Incorporated | Photodiode employing surface grating to enhance sensitivity |
| JP2014049575A (ja) * | 2012-08-30 | 2014-03-17 | Sony Corp | 撮像素子、撮像装置、製造装置および方法 |
| JP6232914B2 (ja) * | 2013-10-16 | 2017-11-22 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
| KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
-
2016
- 2016-05-24 JP JP2016103716A patent/JP6711692B2/ja active Active
-
2017
- 2017-05-12 TW TW106115855A patent/TWI612652B/zh active
- 2017-05-12 RU RU2017116607A patent/RU2672765C2/ru active
- 2017-05-18 US US15/599,140 patent/US10103182B2/en active Active
- 2017-05-23 KR KR1020170063234A patent/KR20170132679A/ko not_active Abandoned
- 2017-05-23 BR BR102017010780-9A patent/BR102017010780A2/pt not_active IP Right Cessation
- 2017-05-24 CN CN201710370871.6A patent/CN107425029B/zh active Active
- 2017-05-24 EP EP17172711.8A patent/EP3249690B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3249690A2 (en) | 2017-11-29 |
| CN107425029B (zh) | 2022-01-28 |
| US10103182B2 (en) | 2018-10-16 |
| KR20170132679A (ko) | 2017-12-04 |
| US20170345857A1 (en) | 2017-11-30 |
| JP2017212304A (ja) | 2017-11-30 |
| BR102017010780A2 (pt) | 2017-12-12 |
| EP3249690B1 (en) | 2021-07-21 |
| TWI612652B (zh) | 2018-01-21 |
| EP3249690A3 (en) | 2018-03-07 |
| JP6711692B2 (ja) | 2020-06-17 |
| RU2672765C2 (ru) | 2018-11-19 |
| TW201742239A (zh) | 2017-12-01 |
| CN107425029A (zh) | 2017-12-01 |
| RU2017116607A (ru) | 2018-11-14 |