KR20170132679A - 광전 변환 장치 및 영상 판독 장치 - Google Patents

광전 변환 장치 및 영상 판독 장치 Download PDF

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Publication number
KR20170132679A
KR20170132679A KR1020170063234A KR20170063234A KR20170132679A KR 20170132679 A KR20170132679 A KR 20170132679A KR 1020170063234 A KR1020170063234 A KR 1020170063234A KR 20170063234 A KR20170063234 A KR 20170063234A KR 20170132679 A KR20170132679 A KR 20170132679A
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KR
South Korea
Prior art keywords
semiconductor region
semiconductor
main surface
photoelectric conversion
recesses
Prior art date
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Abandoned
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KR1020170063234A
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English (en)
Korean (ko)
Inventor
다츠야 스즈키
도루 고이즈미
마사노리 오구라
다카노리 스즈키
준 이바
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캐논 가부시끼가이샤
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Publication of KR20170132679A publication Critical patent/KR20170132679A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H01L31/08—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H01L27/1461—
    • H01L31/04—
    • H01L31/06—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
KR1020170063234A 2016-05-24 2017-05-23 광전 변환 장치 및 영상 판독 장치 Abandoned KR20170132679A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016103716A JP6711692B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置
JPJP-P-2016-103716 2016-05-24

Publications (1)

Publication Number Publication Date
KR20170132679A true KR20170132679A (ko) 2017-12-04

Family

ID=58992647

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170063234A Abandoned KR20170132679A (ko) 2016-05-24 2017-05-23 광전 변환 장치 및 영상 판독 장치

Country Status (8)

Country Link
US (1) US10103182B2 (https=)
EP (1) EP3249690B1 (https=)
JP (1) JP6711692B2 (https=)
KR (1) KR20170132679A (https=)
CN (1) CN107425029B (https=)
BR (1) BR102017010780A2 (https=)
RU (1) RU2672765C2 (https=)
TW (1) TWI612652B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157555B2 (ja) * 2018-05-24 2022-10-20 キヤノン株式会社 画像形成装置
KR102889667B1 (ko) 2021-02-26 2025-11-21 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2026002625A (ja) * 2024-06-21 2026-01-08 キヤノン株式会社 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP3311564B2 (ja) 1995-11-29 2002-08-05 三洋電機株式会社 光半導体装置
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
JP4241527B2 (ja) * 1999-02-25 2009-03-18 キヤノン株式会社 光電変換素子
JP2001007380A (ja) 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) * 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
JP4873964B2 (ja) * 2006-03-03 2012-02-08 セイコーインスツル株式会社 光電変換装置およびイメージセンサ
US20070249138A1 (en) * 2006-04-24 2007-10-25 Micron Technology, Inc. Buried dielectric slab structure for CMOS imager
JP2009218357A (ja) * 2008-03-10 2009-09-24 Panasonic Corp 固体撮像素子
JP5283965B2 (ja) * 2008-05-09 2013-09-04 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5406537B2 (ja) * 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2011124522A (ja) * 2009-12-14 2011-06-23 Canon Inc 光電変換装置
JP2012019056A (ja) * 2010-07-07 2012-01-26 Canon Inc 固体撮像装置及び撮像システム
TWI621184B (zh) * 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP5888985B2 (ja) * 2011-02-09 2016-03-22 キヤノン株式会社 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP2013021014A (ja) 2011-07-07 2013-01-31 Canon Inc エネルギー線検出装置の製造方法
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
US9082905B2 (en) * 2012-02-15 2015-07-14 Texas Instruments Incorporated Photodiode employing surface grating to enhance sensitivity
JP2014049575A (ja) * 2012-08-30 2014-03-17 Sony Corp 撮像素子、撮像装置、製造装置および方法
JP6232914B2 (ja) * 2013-10-16 2017-11-22 セイコーエプソン株式会社 半導体装置およびその製造方法
KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
EP3249690A2 (en) 2017-11-29
CN107425029B (zh) 2022-01-28
US10103182B2 (en) 2018-10-16
US20170345857A1 (en) 2017-11-30
JP2017212304A (ja) 2017-11-30
RU2017116607A3 (https=) 2018-11-14
BR102017010780A2 (pt) 2017-12-12
EP3249690B1 (en) 2021-07-21
TWI612652B (zh) 2018-01-21
EP3249690A3 (en) 2018-03-07
JP6711692B2 (ja) 2020-06-17
RU2672765C2 (ru) 2018-11-19
TW201742239A (zh) 2017-12-01
CN107425029A (zh) 2017-12-01
RU2017116607A (ru) 2018-11-14

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