TWI600056B - Substrate cleaning device and substrate cleaning method - Google Patents
Substrate cleaning device and substrate cleaning method Download PDFInfo
- Publication number
- TWI600056B TWI600056B TW105127073A TW105127073A TWI600056B TW I600056 B TWI600056 B TW I600056B TW 105127073 A TW105127073 A TW 105127073A TW 105127073 A TW105127073 A TW 105127073A TW I600056 B TWI600056 B TW I600056B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- wafer
- liquid
- holding portion
- substrate cleaning
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 231
- 238000004140 cleaning Methods 0.000 title claims description 178
- 238000000034 method Methods 0.000 title claims description 109
- 239000007788 liquid Substances 0.000 claims description 280
- 238000012545 processing Methods 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 50
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 description 62
- 239000007789 gas Substances 0.000 description 41
- 239000002245 particle Substances 0.000 description 39
- 239000003513 alkali Substances 0.000 description 32
- 238000012546 transfer Methods 0.000 description 30
- 238000011084 recovery Methods 0.000 description 26
- 239000000126 substance Substances 0.000 description 25
- 238000005406 washing Methods 0.000 description 23
- 239000010419 fine particle Substances 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 230000001737 promoting effect Effects 0.000 description 18
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 16
- 239000002585 base Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 239000012530 fluid Substances 0.000 description 13
- 230000009471 action Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000006837 decompression Effects 0.000 description 6
- -1 for example Chemical compound 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012175417 | 2012-08-07 | ||
| JP2012229166 | 2012-10-16 | ||
| JP2013095996A JP5586734B2 (ja) | 2012-08-07 | 2013-04-30 | 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201642308A TW201642308A (zh) | 2016-12-01 |
| TWI600056B true TWI600056B (zh) | 2017-09-21 |
Family
ID=50040374
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105127073A TWI600056B (zh) | 2012-08-07 | 2013-07-31 | Substrate cleaning device and substrate cleaning method |
| TW102127434A TWI553699B (zh) | 2012-08-07 | 2013-07-31 | A substrate cleaning device, a substrate cleaning system, a substrate cleaning method and a memory medium |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102127434A TWI553699B (zh) | 2012-08-07 | 2013-07-31 | A substrate cleaning device, a substrate cleaning system, a substrate cleaning method and a memory medium |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20140041685A1 (enExample) |
| JP (1) | JP5586734B2 (enExample) |
| KR (3) | KR101874526B1 (enExample) |
| CN (2) | CN106847729B (enExample) |
| TW (2) | TWI600056B (enExample) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150064911A1 (en) * | 2013-08-27 | 2015-03-05 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus and storage medium |
| JP5977727B2 (ja) * | 2013-11-13 | 2016-08-24 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| JP6308910B2 (ja) | 2013-11-13 | 2018-04-11 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| JP6304592B2 (ja) * | 2014-03-25 | 2018-04-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6600470B2 (ja) * | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
| JP6371253B2 (ja) * | 2014-07-31 | 2018-08-08 | 東京エレクトロン株式会社 | 基板洗浄システム、基板洗浄方法および記憶媒体 |
| JP6548790B2 (ja) * | 2014-07-31 | 2019-07-24 | 東京エレクトロン株式会社 | 基板洗浄システム、基板洗浄方法および記憶媒体 |
| JP6350080B2 (ja) * | 2014-07-31 | 2018-07-04 | Jsr株式会社 | 半導体基板洗浄用組成物 |
| KR101919122B1 (ko) * | 2014-08-12 | 2018-11-15 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
| JP6425517B2 (ja) * | 2014-11-28 | 2018-11-21 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| CN105914167B (zh) | 2015-02-25 | 2018-09-04 | 株式会社思可林集团 | 基板处理装置 |
| JP6618334B2 (ja) * | 2015-06-03 | 2019-12-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法 |
| JP6373803B2 (ja) * | 2015-06-23 | 2018-08-15 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| WO2017056746A1 (ja) | 2015-09-30 | 2017-04-06 | Jsr株式会社 | 半導体基板洗浄用膜形成組成物及び半導体基板の洗浄方法 |
| JP6712482B2 (ja) * | 2016-03-31 | 2020-06-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US10734255B2 (en) | 2016-05-25 | 2020-08-04 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and memory medium |
| JP6951229B2 (ja) | 2017-01-05 | 2021-10-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| WO2018128093A1 (ja) | 2017-01-05 | 2018-07-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| WO2018190278A1 (ja) * | 2017-04-13 | 2018-10-18 | Jsr株式会社 | 半導体基板洗浄用組成物 |
| KR102617773B1 (ko) * | 2017-06-01 | 2023-12-22 | 에이에스엠엘 네델란즈 비.브이. | 입자 제거 장치 및 관련 시스템 |
| JPWO2019009054A1 (ja) * | 2017-07-03 | 2020-04-16 | 東京エレクトロン株式会社 | 基板処理システム、基板洗浄方法および記憶媒体 |
| KR102208754B1 (ko) * | 2017-07-10 | 2021-01-28 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP6914138B2 (ja) * | 2017-07-26 | 2021-08-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法及び基板処理装置 |
| JP6993806B2 (ja) * | 2017-07-31 | 2022-01-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| KR20190015666A (ko) * | 2017-08-04 | 2019-02-14 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| CN107564841A (zh) * | 2017-08-31 | 2018-01-09 | 长江存储科技有限责任公司 | 一种晶圆清洗缺陷的改善方法和装置 |
| TWI755609B (zh) | 2017-09-22 | 2022-02-21 | 日商斯庫林集團股份有限公司 | 基板洗淨方法及基板洗淨裝置 |
| JP7008489B2 (ja) | 2017-12-05 | 2022-01-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7013221B2 (ja) | 2017-12-11 | 2022-01-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN110032044B (zh) * | 2018-01-12 | 2021-03-19 | 上海微电子装备（集团）股份有限公司 | 一种基底交接机构、光刻机及基底交接方法 |
| KR102046973B1 (ko) | 2018-04-10 | 2019-12-02 | 세메스 주식회사 | 기판의 세정방법 및 세정장치 |
| JP7227757B2 (ja) | 2018-05-31 | 2023-02-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| EP3576133B1 (en) | 2018-05-31 | 2023-11-22 | SCREEN Holdings Co., Ltd. | Substrate processing method |
| JP7227758B2 (ja) | 2018-05-31 | 2023-02-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| EP3576134B1 (en) * | 2018-05-31 | 2023-06-28 | SCREEN Holdings Co., Ltd. | Substrate processing method |
| KR20210027292A (ko) | 2018-07-04 | 2021-03-10 | 제이에스알 가부시끼가이샤 | 기판 처리막 형성용 조성물 및 기판의 처리 방법 |
| CN108649008A (zh) * | 2018-07-05 | 2018-10-12 | 睿力集成电路有限公司 | 用于离子注入后晶圆清洗的单片式清洗装置及方法 |
| JP7116676B2 (ja) | 2018-12-14 | 2022-08-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7203593B2 (ja) * | 2018-12-25 | 2023-01-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| KR102680866B1 (ko) | 2019-07-16 | 2024-07-04 | 삼성전자주식회사 | 기판 세정 장치 및 이를 이용한 기판 세정 방법 |
| KR102240924B1 (ko) * | 2019-07-18 | 2021-04-14 | 세메스 주식회사 | 기판 처리 장치 및 회전 어셈블리 |
| JP7232737B2 (ja) * | 2019-08-07 | 2023-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| US12057328B2 (en) | 2019-08-08 | 2024-08-06 | Kyocera Corporation | Clamping jig and cleaning device |
| TWI878399B (zh) * | 2019-12-17 | 2025-04-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
| EP3919978A1 (en) * | 2020-06-05 | 2021-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and a method of forming a particle shield |
| JP7573466B2 (ja) * | 2021-03-17 | 2024-10-25 | 東京エレクトロン株式会社 | ガス処理装置 |
| US12046464B2 (en) | 2021-04-15 | 2024-07-23 | Samsung Electronics Co., Ltd. | Substrate cleaning composition, method for cleaning substrate using the same, and method for fabricating semiconductor device using the same |
| JP7650719B2 (ja) * | 2021-05-17 | 2025-03-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7730272B2 (ja) * | 2021-07-05 | 2025-08-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| JP7504850B2 (ja) * | 2021-09-28 | 2024-06-24 | 芝浦メカトロニクス株式会社 | 基板乾燥装置、基板処理装置及び基板乾燥方法 |
| KR102712483B1 (ko) * | 2021-12-28 | 2024-10-04 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US11925963B2 (en) | 2022-05-27 | 2024-03-12 | Semes Co., Ltd. | Method for treating a substrate |
| KR102721407B1 (ko) | 2022-11-30 | 2024-10-25 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102721406B1 (ko) | 2022-11-30 | 2024-10-25 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4679423A (en) * | 1985-12-16 | 1987-07-14 | Carrier Corporation | Method and apparatus for measuring the pore size of enhanced tubes |
| JP2696244B2 (ja) * | 1989-03-14 | 1998-01-14 | 鐘淵化学工業株式会社 | 樹脂フィルムの連続製造方法及び装置及び設備 |
| JPH08126873A (ja) * | 1994-10-28 | 1996-05-21 | Nec Corp | 電子部品等の洗浄方法及び装置 |
| JP3504023B2 (ja) | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
| JP3395696B2 (ja) | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
| JP3664605B2 (ja) * | 1999-04-30 | 2005-06-29 | 信越半導体株式会社 | ウェーハの研磨方法、洗浄方法及び処理方法 |
| JP3511514B2 (ja) | 2001-05-31 | 2004-03-29 | エム・エフエスアイ株式会社 | 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法 |
| TWI246124B (en) * | 2001-11-27 | 2005-12-21 | Tokyo Electron Ltd | Liquid processing apparatus and method |
| US6955485B2 (en) * | 2002-03-01 | 2005-10-18 | Tokyo Electron Limited | Developing method and developing unit |
| US7458762B2 (en) | 2003-02-13 | 2008-12-02 | Samsung Electronics Co., Ltd. | Apparatus and method for positioning semiconductor substrate |
| KR20050070681A (ko) | 2003-12-30 | 2005-07-07 | 동부아남반도체 주식회사 | 기판 크리닝 장치 |
| US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
| JP4527660B2 (ja) * | 2005-06-23 | 2010-08-18 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2007258462A (ja) | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP4890919B2 (ja) * | 2006-04-13 | 2012-03-07 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
| JP2008060368A (ja) * | 2006-08-31 | 2008-03-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| US20080153040A1 (en) * | 2006-12-21 | 2008-06-26 | Elpida Memory, Inc. | Method for processing semiconductor wafer |
| KR20080088084A (ko) * | 2007-03-28 | 2008-10-02 | 세메스 주식회사 | 기판 처리 장치 및 그의 처리 방법 |
| US8011377B2 (en) * | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| JP2009135169A (ja) | 2007-11-29 | 2009-06-18 | Tokyo Electron Ltd | 基板処理システムおよび基板処理方法 |
| JP5117365B2 (ja) * | 2008-02-15 | 2013-01-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
| JP2010074109A (ja) * | 2008-09-22 | 2010-04-02 | Kurita Water Ind Ltd | 洗浄システム |
| JP5385628B2 (ja) * | 2009-02-13 | 2014-01-08 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| US8619231B2 (en) * | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
| JP2012033880A (ja) * | 2010-06-30 | 2012-02-16 | Central Glass Co Ltd | 撥水性保護膜形成用薬液 |
| JP5817139B2 (ja) * | 2011-02-18 | 2015-11-18 | 富士通株式会社 | 化合物半導体装置の製造方法及び洗浄剤 |
| JP2013016599A (ja) | 2011-07-01 | 2013-01-24 | Toshiba Corp | 半導体装置の製造方法 |
| JP6090837B2 (ja) | 2012-06-13 | 2017-03-08 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
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| CN106847729A (zh) | 2017-06-13 |
| KR20180062440A (ko) | 2018-06-08 |
| JP2014099583A (ja) | 2014-05-29 |
| CN103567169A (zh) | 2014-02-12 |
| TWI553699B (zh) | 2016-10-11 |
| CN103567169B (zh) | 2016-12-28 |
| KR20190042524A (ko) | 2019-04-24 |
| CN106847729B (zh) | 2019-11-22 |
| KR102049431B1 (ko) | 2019-11-28 |
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