JP7308955B2 - クランプ用治具および洗浄装置 - Google Patents
クランプ用治具および洗浄装置 Download PDFInfo
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- JP7308955B2 JP7308955B2 JP2021537617A JP2021537617A JP7308955B2 JP 7308955 B2 JP7308955 B2 JP 7308955B2 JP 2021537617 A JP2021537617 A JP 2021537617A JP 2021537617 A JP2021537617 A JP 2021537617A JP 7308955 B2 JP7308955 B2 JP 7308955B2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
C=(W0-W1)/A・・・(1)
式中、W0は浸漬前の試験片の質量を示し、W1は浸漬開始から72時間経過後の試験片の質量を示し、Aは試験片の浸漬前の表面積(cm2)を示す。試験片は、クランプ用治具22から切り出されたものである。
2 チャンバ
3 第1窓部
4 第1シャッタ
5 搬送アーム
6 第2窓部
7 第2シャッタ
8 回転チャック
9 ガス供給部
10 処理カップ
11 アンダープレート
12 回転板
13 円筒体
14 ベルト
15 モータ
16 トッププレート
17 第2軸体
18 第2水平板
19 モータ
20 第2昇降機構
21 第2流路
22 クランプ用治具
22a 支柱部
22b 屈曲部
22c 基端部
22d 先端部
22e 基部
22f 貫通孔
22g 当接面(第2対向面)
22h 第1対向面
22j 接続面
23 第1流路
24 第1軸体
25 水平板
26 第1昇降機構
27 押圧部材
28 バネ
29 第3軸体
30 洗浄装置
31 第1導電部
32 第2導電部
Claims (13)
- 上下方向に伸びる支柱部と、該支柱部の上側に接続されて基板の外周部に当接する屈
曲部とを含むクランプ用治具であって、
前記屈曲部が、前記支柱部側に位置する基端部と該基端部に接続する先端部とを備え
、
少なくとも前記先端部が、炭化珪素を主成分とするセラミックスを含み、
前記支柱部は、前記基板に対向する第1対向面を、前記先端部は、前記基板に当接す
る表面と前記第1対向面とを接続する接続面をそれぞれ有し、前記第1対向面および前
記接続面は導電性を有する層または膜を含む第1導電部を備え、
前記第1導電部は、グラファイト、グラフェン、カーボンナノチューブ、フラーレン
またはアモルファスカーボンのいずれかを含み、濃度が35質量%である塩酸に浸漬し
、浸漬開始から72時間経過後の、以下の式(1)で示される単位面積当たりの質量変
化Cが0.3g/cm2以下である、クランプ用治具。
C=(W0-W1)/A・・・(1)
式中、W0は浸漬前の試験片の質量を示し、W1は浸漬開始から72時間経過後の試 験片の質量を示し、Aは試験片の浸漬前の表面積(cm2)を示す。 - 上下方向に伸びる支柱部と、該支柱部の上側に接続されて基板の外周部に当接する屈
曲部とを含むクランプ用治具であって、
前記屈曲部が、前記支柱部側に位置する基端部と該基端部に接続する先端部とを備え
、
少なくとも前記先端部が、炭化珪素を主成分とするセラミックスを含み、
少なくとも前記先端部の前記基板に対向する第2対向面が導電性を有する層または膜
を含む第2導電部を備え、該第2導電部の主面が前記基板に当接する表面であり、
前記第2導電部は、グラファイト、グラフェン、カーボンナノチューブ、フラーレン
またはアモルファスカーボンのいずれかを含み、濃度が35質量%である塩酸に浸漬し
、浸漬開始から72時間経過後の、以下の式(1)で示される単位面積当たりの質量変
化Cが0.3g/cm2以下である、クランプ用治具。
C=(W0-W1)/A・・・(1)
式中、W0は浸漬前の試験片の質量を示し、W1は浸漬開始から72時間経過後の試
験片の質量を示し、Aは試験片の浸漬前の表面積(cm2)を示す。 - 前記支柱部と前記屈曲部とが一体形成品である、請求項1に記載のクランプ用治具。
- 前記先端部の前記基板に当接する表面の粗さ曲線における25%の負荷長さ率での切
断レベルと、前記粗さ曲線における75%の負荷長さ率での切断レベルとの差を表す切
断レベル差(Rδc)が、0.065μm以上0.7μm以下である、請求項1または
3に記載のクランプ用治具。 - 前記切断レベル差(Rδc)の変動係数が0.2以上0.35以下である、請求項4
に記載のクランプ用治具。 - 前記先端部の前記基板に当接する表面の前記粗さ曲線における算術平均粗さ(Ra)
が、0.06μm以上3.7μm以下である、請求項4または5に記載のクランプ用治
具。 - 前記算術平均粗さ(Ra)の変動係数が0.15以上0.35以下である、請求項6
に記載のクランプ用治具。 - 前記支柱部と前記屈曲部とが一体形成品である、請求項2に記載のクランプ用治具。
- 前記第2導電部の主面の粗さ曲線における25%の負荷長さ率での切断レベルと、前
記粗さ曲線における75%の負荷長さ率での切断レベルとの差を表す切断レベル差(R
δc)が、0.065μm以上0.7μm以下である、請求項2または8に記載のクラ
ンプ用治具。 - 前記切断レベル差(Rδc)の変動係数が0.2以上0.35以下である、請求項9
に記載のクランプ用治具。 - 前記第2導電部の主面の粗さ曲線における算術平均粗さ(Ra)が0.06μm以上
3.7μm以下である、請求項9または10に記載のクランプ用治具。 - 前記算術平均粗さ(Ra)の変動係数が0.15以上0.35以下である、請求項1
1に記載のクランプ用治具。 - 請求項1~12のいずれかに記載のクランプ用治具を含む、洗浄装置。
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JP2019146481 | 2019-08-08 | ||
JP2019146481 | 2019-08-08 | ||
PCT/JP2020/024951 WO2021024638A1 (ja) | 2019-08-08 | 2020-06-25 | クランプ用治具および洗浄装置 |
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US (1) | US20220293437A1 (ja) |
JP (1) | JP7308955B2 (ja) |
KR (1) | KR20220031923A (ja) |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229399A (ja) | 2001-11-27 | 2003-08-15 | Tokyo Electron Ltd | 液処理装置および液処理方法 |
JP2003258069A (ja) | 2002-03-05 | 2003-09-12 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの保持具 |
JP2013502052A (ja) | 2009-08-07 | 2013-01-17 | アプライド マテリアルズ インコーポレイテッド | 二重温度ヒータ |
JP2014154866A (ja) | 2013-02-14 | 2014-08-25 | Fujifilm Corp | ドライエッチング装置及びドライエッチング装置用のクランプ |
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JPS55111858A (en) | 1979-02-21 | 1980-08-28 | Nippon Sanso Kk | Supplying method of pulverized material to be metal-sprayed |
JPH02292822A (ja) * | 1989-05-02 | 1990-12-04 | Fujitsu Ltd | 半導体製造装置 |
JPH10199964A (ja) * | 1997-01-13 | 1998-07-31 | Dainippon Screen Mfg Co Ltd | 基板回転保持装置および回転式基板処理装置 |
KR100897431B1 (ko) * | 2001-11-27 | 2009-05-14 | 도쿄엘렉트론가부시키가이샤 | 액처리장치 및 액처리방법 |
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- 2020-06-25 JP JP2021537617A patent/JP7308955B2/ja active Active
- 2020-06-25 CN CN202080055997.4A patent/CN114223053A/zh active Pending
- 2020-06-25 KR KR1020227004032A patent/KR20220031923A/ko not_active Application Discontinuation
- 2020-06-25 US US17/633,080 patent/US20220293437A1/en active Pending
- 2020-07-09 TW TW109123210A patent/TWI827861B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229399A (ja) | 2001-11-27 | 2003-08-15 | Tokyo Electron Ltd | 液処理装置および液処理方法 |
JP2003258069A (ja) | 2002-03-05 | 2003-09-12 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの保持具 |
JP2013502052A (ja) | 2009-08-07 | 2013-01-17 | アプライド マテリアルズ インコーポレイテッド | 二重温度ヒータ |
JP2014154866A (ja) | 2013-02-14 | 2014-08-25 | Fujifilm Corp | ドライエッチング装置及びドライエッチング装置用のクランプ |
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CN114223053A (zh) | 2022-03-22 |
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TW202106656A (zh) | 2021-02-16 |
KR20220031923A (ko) | 2022-03-14 |
US20220293437A1 (en) | 2022-09-15 |
TWI827861B (zh) | 2024-01-01 |
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