CN114223053A - 夹紧用夹具以及清洗装置 - Google Patents
夹紧用夹具以及清洗装置 Download PDFInfo
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- CN114223053A CN114223053A CN202080055997.4A CN202080055997A CN114223053A CN 114223053 A CN114223053 A CN 114223053A CN 202080055997 A CN202080055997 A CN 202080055997A CN 114223053 A CN114223053 A CN 114223053A
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Abstract
本公开的夹紧用夹具包含:支柱部,在上下方向上延伸;以及弯曲部,与支柱部的上侧连接,并与基板的外周部抵接。弯曲部具备位于支柱部侧的基端部和与基端部连接的前端部。至少前端部包含以碳化硅或氧化铝为主成分的陶瓷。
Description
技术领域
本发明涉及夹紧用夹具以及清洗装置。
背景技术
以往,为了去除附着于半导体基板的颗粒、有机污染物、金属杂质等污染物、蚀刻处理后的聚合物等,使用通过给定的药液、纯水等清洗液清洗半导体基板的清洗装置。
作为包含这样的清洗装置的液处理装置,在专利文献1中公开了一种液处理装置,该液处理装置具备水平地保持基板的保持单元,该保持单元具有保持基板的端面的爪部。在专利文献2中记载了爪部(保持爪)例如包含聚醚醚酮(PEEK)树脂等塑料。
在先技术文献
专利文献
专利文献1:日本专利第4565433号公报
专利文献2:日本专利第6302665号公报
发明内容
发明要解决的课题
若专利文献1所记载的爪部包含聚醚醚酮(PEEK)树脂等塑料,则存在缺乏耐酸性的问题。例如,在作为清洗液使用硫酸、磷酸、盐酸等酸的情况下,劣化显著,存在无法长期持续地使用爪部的问题。
本发明是为了解决上述课题而提出的,其目的在于,提供一种具有优异的耐酸性,并能够长期持续地使用爪部的夹紧用夹具以及清洗装置。
用于解决课题的手段
本公开的夹紧用夹具包含:支柱部,在上下方向上延伸;以及弯曲部,与支柱部的上侧连接,并与基板的外周部抵接。弯曲部具备位于支柱部侧的基端部和与基端部连接的前端部。至少前端部包含以碳化硅或氧化铝为主成分的陶瓷。
进而,本公开的清洗装置包含上述夹紧用夹具。
发明效果
在本公开的夹紧用夹具中,弯曲部的至少前端部包含以具有优异的耐酸性的碳化硅或氧化铝为主成分的陶瓷。因此,本公开的夹紧用夹具能够长期持续地使用。
附图说明
图1是示出安装有本公开的一个实施方式涉及的夹紧用夹具的清洗装置的概略结构的示意图。
图2的(A)是示出图1所示的夹紧用夹具和夹紧用夹具向旋转板的安装状态的剖视图,(B)是示出(A)的A部分的一个例子的放大图,(C)是示出(A)的A部分的其他例的放大图,(D)是示出(A)的B部分的一个例子的放大图。
具体实施方式
以下,参照附图,对本公开的夹紧用夹具进行详细说明。图1是示出安装有本公开的一个实施方式涉及的夹紧用夹具22的清洗装置30的概略结构的示意图。
图1所示的清洗装置30具备壳体1和在壳体1的内部提供用于清洗半导体晶片、液晶显示器(LCD)用基板等各种基板W的空间的腔室2。
壳体1具有用于向壳体1搬入基板W、或者从壳体1搬出基板W的第1窗部3,第1窗部3由第1闸门4开闭。传送臂5搭载基板W,通过第1窗部3向壳体1搬入基板W,或者从壳体1搬出基板W。
第1窗部3除了基板W的搬入搬出时以外,通过第1闸门4而被关闭。第1闸门4设置在壳体1的内部,从壳体1的内部开闭第1窗部3。
腔室2具有用于向腔室2搬入基板W、或者从腔室2搬出基板W的第2窗部6,第2窗部6由第2闸门7开闭。传送臂5通过第2窗部6进入腔室2内或者从腔室2退出,对设置于腔室2的内部的旋转卡盘8进行基板W的交接。
第2闸门7设置在腔室2的内部,从腔室2的内部开闭第2窗部6。
向腔室2内供给氮气等干燥气体的气体供给部9设置在腔室2的顶板。气体供给部9为了防止由供给到保持于旋转卡盘8的基板W的药液的蒸发导致的腔室2内的充满,向下供给干燥气体。若向下供给干燥气体,则在基板W的表面不易产生作为污染物的水印。
在腔室2内设置有:收纳基板W的处理罩10;在处理罩10内保持基板W的旋转卡盘8;从基板W的背面分离而设置的底板11;以及从基板W的表面分离而设置的顶板16。
处理罩10分别在上部具备倾斜部,在底部具备排出管(drain)10a。在处理罩10的形成有倾斜部的上部位于比保持于旋转卡盘8的基板W更靠上方的位置(在图1中为用实线示出的位置。以下有时记载为“处理位置”。)与上部位于比保持于旋转卡盘8的基板W更靠下侧的位置(在图1中为用双点划线示出的位置。以下有时记载为“退避位置”。)之间升降自如。
在传送臂5与旋转卡盘8之间交接基板W的情况下,处理罩10保持在退避位置以使不阻碍传送臂5的进入、退出。另一方面,在对保持于旋转卡盘8的基板W进行清洗的情况下,处理罩10被保持在处理位置。保持于处理位置的处理罩10防止供给到基板W的清洗液向周围飞散,进而将在基板W的清洗中使用的清洗液导向排出管10a。排出管10a与清洗液回收管线和排气管道(均未图示)连接。排出管10a对在处理罩10内产生的雾等进行废弃,或者对腔室2内的清洗液进行回收。
旋转卡盘8具有圆板状的旋转板12和与旋转板12连接的圆筒状的圆筒体13。支承基板W的支承件(未图示)和固定基板W的夹紧用夹具22被安装在旋转板12的外周部。支承件沿着圆周方向等间隔地配置在至少三个部位,并从背面侧支承基板W。夹紧用夹具22沿着圆周方向等间隔地配置在至少三个部位,并从外周面侧固定基板W。在圆筒体13的外周面卷绕有带14。通过马达15使带14从动,由此使圆筒体13以及旋转板12旋转,能够使由夹紧用夹具22固定的基板W旋转。
底板11与贯穿插入旋转板12的中央部以及圆筒体13内的第1轴体24连接。第1轴体24固定在水平板25,水平板25能够与第1轴体24一起通过气缸等第1升降机构26进行升降。在底板11以及第1轴体24设置有朝向基板W供给药液、纯水等清洗液、干燥气体的第1流路23。
位于腔室2的顶板附近的圆板状的顶板16与圆筒状的第2轴体17的下端连接。顶板16能够通过设置于水平板18的马达19而进行旋转。第2轴体17旋转自如地被支承在第2水平板18的下表面。该第2水平板18能够通过固定于腔室2的顶板的气缸等第2升降机构20在铅垂方向上升降。在顶板16和第2轴体17各自的内部,均沿着轴向设置有供给药液、纯水等清洗液、干燥气体的第2流路21。
当在旋转卡盘8与传送臂5之间交接基板W的情况下,顶板16被保持在靠近腔室2的顶板的位置以使不与传送臂5碰撞。在对基板W的表面(上表面)进行清洗的情况下,顶板16下降到接近于保持于夹紧用夹具22的基板W的表面的位置,清洗液等通过第2流路21朝向基板W供给。
在同时清洗基板W的表面和背面(上下表面)的情况下,与上述的基板W的表面的清洗同时,使用底板11以及第1流路23清洗基板W的背面。作为该基板W的背面的清洗方法,例如,首先,使底板11接近基板W的背面。接着,从第1流路23向基板W与底板11之间供给药液而形成药液层。保持给定时间来进行药液处理,接下来,从第1流路23向基板W与底板11之间供给纯水等而使药液流出,进行冲洗处理。接着,使用一边从第1流路23向基板W与底板11之间供给干燥气体一边使基板W高速旋转的方法。
药液例如是盐酸、SPM(Sulfuric acid Hydrogen Peroxide Mixture(硫酸与过氧化氢水的混合液))、氨过氧化氢水(APM)那样的氨系药液、稀氢氟酸(DHF)那样的氢氟酸系药液、硫酸过氧化氢水(SPM)那样的硫酸系药液等的水溶液、磷酸水溶液等。
在基板W被夹紧用夹具22保持后,对基板W进行清洗。此时,在使处理罩10上升后,使所使用的药液、纯水等从排出管10a排出。
在基板W的清洗结束后,使处理罩10以及底板11下降。在使顶板16上升的状态下,将基板W从夹紧用夹具22转移到支承件。接着,打开第1闸门4和第2闸门7,使传送臂5进入腔室2内。在该状态下,通过与之前说明的将基板W从传送臂5转移到旋转卡盘8的步骤相反的步骤,将基板W从旋转卡盘8向传送臂5转移,将基板W从清洗装置30搬出。
接着,对夹紧用夹具22和夹紧用夹具22向旋转板12的安装状态进行说明。
图2的(A)是示出图1所示的夹紧用夹具和夹紧用夹具向旋转板的安装状态的剖视图,图2的(B)是示出图2的(A)的A部分的一个例子的放大图,图2的(C)是示出图2的(A)的A部分的其他例的放大图,图2的(D)是示出图2的(A)的B部分的一个例子的放大图。
夹紧用夹具22包含:支柱部22a,在上下方向上延伸;以及弯曲部22b,与支柱部22a的上侧连接,并与基板W的外周部抵接。弯曲部22b包含位于支柱部22a侧的基端部22c和与基端部22c连接的前端部22d。前端部22d的与基板W的外周部抵接的部分为爪状,基部22e从支柱部22a的下侧与支柱部22a连接,并支承支柱部22a。基部22e沿着夹紧用夹具22的宽度方向具备贯通孔22f。
前端部22d具有从斜上方以及斜下方夹持基板W的表面和背面的边缘的面22g。基板W被由该面22g形成的槽夹持而被保持。
该前端部22d在各夹紧用夹具22的宽度方向上相互分离地设置。在前端部仅为一个部位的情况下,若前端部22d保持设置于基板W的缺口(未图示)的部分,则存在基板W的保持变得不稳定的担忧,但是通过分离的两个部位的前端部22d,能够与形成于基板W的缺口的位置无关地可靠地保持基板W。
若使按压构件27向上方移动,从而将基部22e的凸状部按压在旋转板12,则弹簧28收缩,夹紧用夹具22整体以圆柱状的第3轴体29为旋转中心旋转。此时,前端部22d向旋转板12的外侧移动。另一方面,若使按压构件27向下方移动,则弹簧28延伸,夹紧用夹具22整体以第3轴体29为旋转中心旋转以使前端部22d向旋转板12的内侧移动。这样,按压构件27和弹簧28具有调节前端部22d的位置的功能。上述的夹紧用夹具22是具有基部22e的夹紧用夹具,但是也可以没有基部22e。
这样的夹紧用夹具22的至少前端部22d包含以碳化硅或氧化铝为主成分的陶瓷。在本说明书中,所谓“主成分”,是指在构成陶瓷的成分的合计100质量%中占据80质量%以上的成分,特别地,也可以为90质量%以上。
构成的成分能够通过使用了CuKα射线的X射线衍射装置来鉴定。各成分的含量例如能够通过ICP(Inductively Coupled Plasma,电感耦合等离子体)发光分光分析装置或荧光X射线分析装置求出。
在前端部22d包含以碳化硅为主成分的陶瓷的情况下,作为其他成分,也可以包含硼、游离碳。在前端部22d包含以氧化铝为主成分的陶瓷的情况下,作为其他成分,也可以包含镁、硅以及钙的氧化物。
若前端部22d包含这样的具有优异的耐酸性的陶瓷,则得到的夹紧用夹具即使使用酸作为基板W的清洗液,也能够长期使用。
支柱部22a和弯曲部22b可以分别形成,也可以一体地形成。特别是,若一体地形成,则即使反复夹紧基板W而进行清洗,也由于不存在由玻璃、树脂形成的接合层,所以不用担忧以支柱部22a与弯曲部22b的边界为起点而分别分离。所谓“一体地形成”,是指不是将支柱部22a与弯曲部22b接合而形成,而是通过成型、切削、烧成以及磨削而作为一体形成品得到夹紧用夹具22。
对前端部22d的与基板W抵接的表面22g(以下,有时将与基板W抵接的表面记载为“抵接面”)的粗糙度曲线中的25%的负载长度率处的截面高度与粗糙度曲线中的75%的负载长度率处的截面高度之差进行表示的截面高度差(Rδc)可以是0.065μm以上且0.7μm以下。
若截面高度差(Rδc)为上述范围,则前端部22d的抵接面22g在维持适度的锚固效应的同时凹凸小,比较平坦。因此,不易产生容易伴随着基板W的夹紧而产生的从抵接面22g的脱粒。其结果是,能够抑制因该脱粒而产生的基板W的损伤等不良影响。
截面高度差(Rδc)的变动系数也可以为0.2以上且0.35以下。若截面高度差(Rδc)的变动系数为上述范围,则即使在抵接面22g存在损伤,由该损伤引起的对基板W的不良影响也变少。其结果是,悬浮在空气中的微粒不易进入抵接面22g,因此能够抑制由该微粒引起的对基板W的不良影响。
前端部22d的与基板W抵接的表面(抵接面)22g的粗糙度曲线中的算术平均粗糙度(Ra)也可以为0.06μm以上且3.7μm以下。如果是这样的算术平均粗糙度(Ra),则抵接面22g在维持适度的锚固效应的同时凹凸小,比较平坦。因此,更不易产生容易伴随着基板W的夹紧而产生的从抵接面22g的脱粒。其结果是,能够抑制因该脱粒而产生的对基板W的损伤等不良影响。
算术平均粗糙度(Ra)的变动系数也可以为0.15以上且0.35以下。若截面高度差(Rδc)的变动系数为这样的范围,则即使在抵接面22g存在损伤,由该损伤引起的对基板W的不良影响也进一步变少。其结果是,悬浮在空气中的微粒不易进入抵接面22g,因此能够抑制由该微粒引起的对基板W的不良影响。
也可以分别地,支柱部22a具有与基板W对置的第1对置面22h,前端部22d具有将与基板W抵接的表面22g和第1对置面22h连接的连接面22j。第1对置面22h以及连接面22j也可以具备包含具有导电性的层或膜的第1导电部31。若第1对置面22h以及连接面22j具备第1导电部31,则即使因药液的气化而产生的具有强的静电的带电粒子附着在基板W,也能够经由第1导电部31去除静电。其结果是,能够抑制基板W的静电损伤。
进而,也可以夹紧用夹具22的至少前端部22d的与基板W对置的第2对置面22g具备包含具有导电性的层或膜的第2导电部32,第2导电部32的主面是与基板W抵接的表面。若第2导电部32的主面是与基板W抵接的表面,则即使上述带电粒子附着在基板W,也能够经由第2导电部32以及第1导电部31去除静电。其结果是,能够抑制基板W的静电损伤。进而,在空气中悬浮的微粒不易附着在第2导电部32的主面,即使假设附着而产生了静电,也能够容易地去除静电。
第1导电部31以及第2导电部32的室温下的表面电阻率为1×108Ω/□以下或者表面电阻值为1×108Ω以下。其构成成分例如可列举石墨、石墨烯、碳纳米管、富勒烯、非晶碳、钛、氮化钛、碳化钛、碳氮化钛或从化学计量组成中缺损了氧的氧化钛或钛酸铝等。特别地,第1导电部31以及第2导电部32的室温下的表面电阻率也可以是1×104Ω/□以下或者表面电阻值为1×104Ω以下。
表面电阻率依照JISC2141:1992测定即可。在JISC2141:1992所规定的表面电阻率测定用的试验片不能从第1导电部31或者第2导电部32取出的情况下,用测试仪等测定表面电阻值即可。构成第1导电部31及第2导电部32的成分使用X射线衍射装置来鉴定即可。
在第1导电部31包含石墨、石墨烯、碳纳米管、富勒烯或非晶碳的情况下,支柱部22a也可以包含以碳化硅为主成分的陶瓷。同样地,在第2导电部32包含石墨、石墨烯、碳纳米管、富勒烯或非晶碳的情况下,前端部22d也可以包含以碳化硅为主成分的陶瓷。
这些成分容易牢固地粘合在碳化硅的晶粒的表面,或者固溶于碳化硅的晶粒内。为了去除粘合在表面的污染物等,即使在电离度接近1.0的强电解液中长时间(例如72小时以上)浸渍,构成这些成分的粒子也不易剥离。其结果是,能够长期维持导电性。
在第1导电部31以及第2导电部32中的至少任一个包含石墨的情况下,基于使用了X射线衍射法的测定的、来自石墨的(002)面的衍射峰的半值宽度可以为0.3°以下(0°除外)。在半值宽度为这样的范围的情况下,石墨的晶体构造能够设为致密质的构造。特别是,石墨的晶体构造也可以是被称为2H石墨的六方晶系的晶体构造。
层厚(膜厚)例如为30nm以上,特别是可以为100nm以上。层厚(膜厚)例如能够使用通过扫描型电子显微镜拍摄了剖面而得到的图像来测定。
夹紧用夹具22的对第2导电部32的主面的粗糙度曲线中的25%的负载长度率处的截面高度与粗糙度曲线中的75%的负载长度率处的截面高度之差进行表示的截面高度差(Rδc)可以为0.065μm以上且0.7μm以下。夹紧用夹具22的截面高度差(Rδc)的变动系数也可以为0.2以上且0.35以下。
夹紧用夹具22的第2导电部32的主面的粗糙度曲线中的算术平均粗糙度(Ra)可以为0.06μm以上且3.7μm以下。夹紧用夹具22的算术平均粗糙度(Ra)的变动系数可以为0.15以上且0.35以下。如果截面高度差(Rδc)、算术平均粗糙度(Ra)为这样的范围,则可发挥与上述的效果同样的效果。
与基板W抵接的表面22g以及第2导电部32的主面的截面高度差(Rδc)以及算术平均粗糙度(Ra)依照JISB0601-2001进行测定即可。具体地,能够使用形状解析激光显微镜((株)基恩士(KEYENCE)制造,VK-X1100或其后续机种)进行测定。作为测定条件,首先,如下设定,即,照明方式为同轴照明,倍率为120倍,没有截止值λs,截止值λc为0.08mm,没有截止值λf,具有终端效果的修正,从作为测定对象的抵接面22g以及第2导电部32的主面起每一处的测定范围为2740μm×2090μm。接着,针对每个测定范围,沿着长度方向画出四条作为测定对象的线以使成为大致等间隔。然后,对位于夹紧用夹具22的宽度方向的两侧的各个前端部22d的抵接面22g以及第2导电部32的主面的成为测定对象的合计八条线进行线粗糙度测量即可。一条线的长度例如为1600μm以上且1800μm以下。
浸渍在浓度为35质量%的盐酸中,从浸渍开始经过72小时后的、以下的式(1)所示的每单位面积的质量变化C可以为0.3g/em2以下。
C=(W0-W1)/A…(1)
式中,W0表示浸渍前的试验片的质量,W1表示从浸渍开始经过72小时后的试验片的质量,A表示试验片的浸渍前的表面积(cm2)。试验片是从夹紧用夹具22切出的。
若质量减少率为3%以下,则分别构成第1导电部31以及第2导电部32的粒子不易剥离。其结果是,能够长期浸渍在盐酸中,污垢的去除效果变高。
接着,对本公开涉及的夹紧用夹具的制造方法的一个实施方式进行说明。
在本公开的夹紧用夹具包含以碳化硅为主成分的陶瓷的情况下,作为碳化硅粉末,准备粗粒状粉末以及微粒状粉末,通过球磨机或珠磨机与水,根据需要与分散剂粉碎混合40~60小时而形成浆料。在此,粉碎混合后的微粒状粉末以及粗粒状粉末各自的粒径的范围为0.4μm以上且4μm以下、11μm以上且34μm以下。接着,在得到的浆料中添加石墨粉末、使该石墨粉末分散的分散剂(以下有时记载为“石墨用分散剂”)、包含碳化硼粉末以及非晶质状的碳粉末或酚醛树脂的烧结助剂、和粘合剂并进行混合后,进行喷雾干燥,由此得到主成分包含碳化硅的颗粒。
作为微粒状粉末与粗粒状粉末的质量比率,例如微粒状粉末可以为6质量%以上且15质量%以下,粗粒状粉末可以为85质量%以上且94质量%以下。为了使陶瓷中的粗粒状碳化硅粒子的纵横比的平均值为1以上且2以下,预先使用纵横比的平均值为1以上且1.6以下的粗粒状粉末即可。
通过使用石墨用分散剂,能够吸附于疏水性的石墨粉末而使其在以水为溶剂的浆料中湿润、浸透。进而,由于作用为抑制石墨的凝聚,因此能够得到包含石墨的比较均质的颗粒。作为该石墨用分散剂,例如可列举聚羧酸钠等羧酸盐、磺酸盐、硫酸酯盐、磷酸酯盐等阴离子表面活性剂等。作为石墨用分散剂的阴离子表面活性剂吸附于石墨粉末,由此石墨粉末在浆料中容易湿润并浸透。因此,通过阴离子表面活性剂所具有的亲水基的电荷排斥,可抑制石墨粉末的再凝聚。其结果是,石墨粉末不会在浆料中凝聚,能够充分地分散。
接着,将颗粒填充到成型模具中,以在49MPa以上且147MPa的范围内适当选择的压力从厚度方向进行加压而得到成型体。然后,对成形体实施切削加工,制作图2的(A)所示的形状的夹紧用夹具的前体。在氮气氛中,温度设为450℃以上且650℃以下,保持时间设为2小时以上且10小时以下,对该前体进行脱脂,得到脱脂体。接着,将该脱脂体在氩等惰性气体的减压气氛中并在1800℃以上且2200℃以下的温度下保持3小时以上且6小时以下,由此能够得到烧结体。
上述的制造方法是预先在浆料中包含石墨的情况下的制造方法。在上述的浆料不包含石墨的情况下,首先,制作图2的(A)所示的形状的夹紧用夹具的前体。使用喷涂装置向该前体的表面喷涂包含石墨粉末的IPA溶液。在此,石墨粉末的平均粒径例如可以为10μm以上且100μm以下。石墨粉末相对于IPA溶液100质量份的含量例如可以为1质量份以上且5质量份以下。将石墨粉末喷涂在表面的前体通过依次进行上述的脱脂以及烧成,能够成为具备第1导电部以及第2导电部的烧结体。
在本公开的夹紧用夹具例如包含以氧化铝为主成分的陶瓷的情况下,将氧化铝粉末(纯度为99.9质量%以上)和氢氧化镁、氧化硅以及碳酸钙的各粉末与溶剂(离子交换水)一起投入粉碎用磨机中。直到粉末的平均粒径(D50)成为1.5μm以下为止进行粉碎后,添加有机结合剂和使氧化铝粉末分散的分散剂进行混合,得到浆料。在此,上述粉末的合计100质量%中的氢氧化镁粉末的含量为0.3~0.42质量%,氧化硅粉末的含量为0.5~0.8质量%,碳酸钙粉末的含量为0.06~0.1质量%,剩余部分为氧化铝粉末以及不可避免的杂质。
作为有机结合剂,没有限定,例如可列举丙烯酸乳液、聚乙烯醇、聚乙二醇、聚环氧乙烷等。接着,对浆料进行喷雾造粒而得到颗粒。接着,通过与上述的方法同样的方法得到夹紧用夹具的前体。通过将该前体在1500℃以上且1700℃以下的温度下保持4小时以上且6小时以下,能够得到烧结体。
前端部的抵接面通过对烧结体的前端部的表面进行抛光研磨而得到。具体地,将抛光轮的基材为毛毡,使用将平均粒径为1μm以上且4μm以下的金刚石粉末添加到油脂类而得到的膏状研磨剂进行研磨即可。
例如,为了得到抵接面的截面高度差(Rδc)为0.065μm以上且0.7μm以下的夹紧用夹具,使用平均粒径为2μm以上且4μm以下的金刚石粉末,将抛光轮的转速设为2000rpm以上且3000rpm以下即可。
例如,为了得到抵接面的截面高度差(Rδc)的变动系数为0.2以上且0.35以下的夹紧用夹具,使用平均粒径为2μm以上且4μm以下的金刚石粉末,将抛光轮的转速设为1000rpm以上且2000rpm以下即可。
例如,为了得到抵接面的算术平均粗糙度(Ra)为0.06μm以上且3.7μm以下的夹紧用夹具,使用平均粒径为1μm以上且2μm以下的金刚石粉末,将抛光轮的转速设为2000rpm以上且3000rpm以下即可。
例如,为了得到抵接面的算术平均粗糙度(Ra)的变动系数为0.15以上且0.35以下的夹紧用夹具,使用平均粒径为1μm以上且2μm以下的金刚石粉末,将抛光轮的转速设为1000rpm以上且2000rpm以下即可。
在得到具备前端部的与基板W对置的表面具有导电性的膜的夹紧用夹具的情况下,在进行了上述的抛光研磨之后,通过蒸镀、溅射等方法,形成膜以使膜厚成为例如30nm以上且120nm以下即可。若膜厚为该范围,则由于膜自身较薄,所以可维持通过抛光研磨而得到的表面的性状。
通过上述的制造方法得到的夹紧用夹具包含具有优异的耐酸性的陶瓷。因此,本公开涉及的夹紧用夹具例如能够作为清洗装置等的构件而长期持续地使用。
符号说明
1:壳体;
2:腔室;
3:第1窗部;
4:第1闸门;
5:传送臂;
6:第2窗部;
7:第2闸门;
8:旋转卡盘;
9:气体供给部;
10:处理罩;
11:底板;
12:旋转板;
13:圆筒体;
14:带;
15:马达;
16:顶板;
17:第2轴体;
18:第2水平板;
19:马达;
20:第2升降机构;
21:第2流路;
22:夹紧用夹具;
22a:支柱部;
22b:弯曲部;
22c:基端部;
22d:前端部;
22e:基部;
22f:贯通孔;
22g:抵接面(第2对置面);
22h:第1对置面;
22j:连接面;
23:第1流路;
24:第1轴体;
25:水平板;
26:第1升降机构;
27:按压构件;
28:弹簧;
29:第3轴体;
30:清洗装置;
31:第1导电部;
32:第2导电部。
Claims (14)
1.一种夹紧用夹具,包含:支柱部,在上下方向上延伸;以及弯曲部,与该支柱部的上侧连接,并与基板的外周部抵接,
所述弯曲部具备位于所述支柱部侧的基端部和与该基端部连接的前端部,
至少所述前端部包含以碳化硅或氧化铝为主成分的陶瓷。
2.根据权利要求1所述的夹紧用夹具,其中,
所述支柱部和所述弯曲部是一体形成品。
3.根据权利要求1或2所述的夹紧用夹具,其中,
对所述前端部的与所述基板抵接的表面的粗糙度曲线中的25%的负载长度率处的截面高度与所述粗糙度曲线中的75%的负载长度率处的截面高度之差的进行表示的截面高度差Rδc为0.065μm以上且0.7μm以下。
4.根据权利要求3所述的夹紧用夹具,其中,
所述截面高度差Rδc的变动系数为0.2以上且0.35以下。
5.根据权利要求3或4所述的夹紧用夹具,其中,
所述前端部的与所述基板抵接的表面的所述粗糙度曲线中的算术平均粗糙度Ra为0.06μm以上且3.7μm以下。
6.根据权利要求5所述的夹紧用夹具,其中,
所述算术平均粗糙度Ra的变动系数为0.15以上且0.35以下。
7.根据权利要求1~6中任一项所述的夹紧用夹具,其中,
分别地,所述支柱部具有与所述基板对置的第1对置面,所述前端部具有将与所述基板抵接的表面和所述第1对置面连接的连接面,所述第1对置面以及所述连接面具备包含具有导电性的层或膜的第1导电部。
8.根据权利要求7所述的夹紧用夹具,其中,
至少所述前端部的与所述基板对置的第2对置面具备包含具有导电性的层或膜的第2导电部,该第2导电部的主面是与所述基板抵接的表面。
9.根据权利要求8所述的夹紧用夹具,其中,
对所述第2导电部的主面的粗糙度曲线中的25%的负载长度率处的截面高度与所述粗糙度曲线中的75%的负载长度率处的截面高度之差进行表示的截面高度差Rδc为0.065μm以上且0.7μm以下。
10.根据权利要求9所述的夹紧用夹具,其中,
所述截面高度差Rδc的变动系数为0.2以上且0.35以下。
11.根据权利要求9或10所述的夹紧用夹具,其中,
所述第2导电部的主面的粗糙度曲线中的算术平均粗糙度Ra为0.06μm以上且3.7μm以下。
12.根据权利要求11所述的夹紧用夹具,其中,
所述算术平均粗糙度Ra的变动系数为0.15以上且0.35以下。
13.根据权利要求7~12中任一项所述的夹紧用夹具,其中,
浸渍在浓度为35质量%的盐酸中,从浸渍开始经过72小时后的、以下的式(1)所示的每单位面积的质量变化C为0.3g/cm2以下,
C=(W0-W1)/A…(1),
式中,W0表示浸渍前的试验片的质量,W1表示从浸渍开始经过72小时后的试验片的质量,A表示试验片的浸渍前的表面积,单位为cm2。
14.一种清洗装置,
包含权利要求1~13中任一项所述的夹紧用夹具。
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- 2020-06-25 CN CN202080055997.4A patent/CN114223053A/zh active Pending
- 2020-06-25 KR KR1020227004032A patent/KR20220031923A/ko not_active Application Discontinuation
- 2020-06-25 US US17/633,080 patent/US20220293437A1/en active Pending
- 2020-06-25 WO PCT/JP2020/024951 patent/WO2021024638A1/ja active Application Filing
- 2020-07-09 TW TW109123210A patent/TWI827861B/zh active
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WO2021024638A1 (ja) | 2021-02-11 |
KR20220031923A (ko) | 2022-03-14 |
TWI827861B (zh) | 2024-01-01 |
US20220293437A1 (en) | 2022-09-15 |
JP7308955B2 (ja) | 2023-07-14 |
TW202106656A (zh) | 2021-02-16 |
JPWO2021024638A1 (zh) | 2021-02-11 |
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