TWI590470B - 具有電極結構之電容器，製造具有電極結構之電容器及具有電極結構之半導體裝置的方法 - Google Patents
具有電極結構之電容器，製造具有電極結構之電容器及具有電極結構之半導體裝置的方法 Download PDFInfo
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- TWI590470B TWI590470B TW100104675A TW100104675A TWI590470B TW I590470 B TWI590470 B TW I590470B TW 100104675 A TW100104675 A TW 100104675A TW 100104675 A TW100104675 A TW 100104675A TW I590470 B TWI590470 B TW I590470B
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- conductive pattern
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- capacitor
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100017134A KR101583516B1 (ko) | 2010-02-25 | 2010-02-25 | 전극 구조체를 구비하는 캐패시터, 이의 제조 방법 및 전극 구조체를 포함하는 반도체 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140852A TW201140852A (en) | 2011-11-16 |
| TWI590470B true TWI590470B (zh) | 2017-07-01 |
Family
ID=44475776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104675A TWI590470B (zh) | 2010-02-25 | 2011-02-11 | 具有電極結構之電容器，製造具有電極結構之電容器及具有電極結構之半導體裝置的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8580648B2 (https=) |
| JP (1) | JP5702183B2 (https=) |
| KR (1) | KR101583516B1 (https=) |
| TW (1) | TWI590470B (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9202822B2 (en) | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101877878B1 (ko) | 2012-06-11 | 2018-07-13 | 에스케이하이닉스 주식회사 | 복층의 스토리지노드를 구비한 반도체장치 및 그 제조 방법 |
| KR20140108026A (ko) * | 2013-02-28 | 2014-09-05 | 삼성디스플레이 주식회사 | 박막 반도체 장치, 유기 발광 표시 장치, 및 이의 제조 방법 |
| KR20150044646A (ko) * | 2013-10-17 | 2015-04-27 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| KR102179169B1 (ko) * | 2014-09-02 | 2020-11-18 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조방법 |
| US9685368B2 (en) | 2015-06-26 | 2017-06-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure having an etch stop layer over conductive lines |
| KR102449613B1 (ko) * | 2016-01-06 | 2022-10-04 | 삼성전자주식회사 | 커패시터 |
| TW201833991A (zh) * | 2016-11-08 | 2018-09-16 | 美商應用材料股份有限公司 | 自對準圖案化之方法 |
| KR101963285B1 (ko) * | 2017-04-26 | 2019-03-28 | 삼성전기주식회사 | 커패시터 및 이를 포함하는 실장기판 |
| KR102609518B1 (ko) | 2018-09-21 | 2023-12-05 | 삼성전자주식회사 | 반도체 소자 형성 방법 |
| US11233058B2 (en) * | 2018-12-19 | 2022-01-25 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Semiconductor device and method for fabricating the same |
| KR102723487B1 (ko) | 2020-03-02 | 2024-10-28 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
| US11264389B2 (en) * | 2020-06-03 | 2022-03-01 | Nanya Technology Corporation | Stack capacitor structure and method for forming the same |
| KR102622419B1 (ko) | 2020-06-03 | 2024-01-08 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| KR102916527B1 (ko) | 2021-06-24 | 2026-01-21 | 삼성전자 주식회사 | 집적회로 소자 및 그 제조 방법 |
| CN115568208B (zh) | 2021-07-02 | 2025-07-18 | 长鑫存储技术有限公司 | 一种半导体结构的制作方法及半导体结构 |
| US12278142B2 (en) | 2022-05-11 | 2025-04-15 | Nanya Technology Corporation | Method for manfacturing semiconductor device for reducing partcle-induced defects |
| TWI826174B (zh) * | 2022-05-11 | 2023-12-11 | 南亞科技股份有限公司 | 半導體元件的製備方法 |
| US12211739B2 (en) | 2022-05-11 | 2025-01-28 | Nanya Technology Corporation | Method for manufacturing semiconductor device comprising contact void surrounding bit line |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0555514A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2751906B2 (ja) * | 1996-01-17 | 1998-05-18 | 日本電気株式会社 | 容量素子の形成方法 |
| JP2000012796A (ja) * | 1998-06-19 | 2000-01-14 | Hitachi Ltd | 半導体装置ならびにその製造方法および製造装置 |
| JP4956355B2 (ja) | 1998-08-07 | 2012-06-20 | 株式会社東芝 | 半導体装置の製造方法 |
| US6323081B1 (en) * | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
| US6780758B1 (en) * | 1998-09-03 | 2004-08-24 | Micron Technology, Inc. | Method of establishing electrical contact between a semiconductor substrate and a semiconductor device |
| US6365453B1 (en) * | 1999-06-16 | 2002-04-02 | Micron Technology, Inc. | Method and structure for reducing contact aspect ratios |
| JP2001189435A (ja) * | 1999-10-18 | 2001-07-10 | Sony Corp | スタックキャパシタ及びその製造方法 |
| US6617248B1 (en) * | 2000-11-10 | 2003-09-09 | Micron Technology, Inc. | Method for forming a ruthenium metal layer |
| US6730561B2 (en) * | 2001-06-06 | 2004-05-04 | Applied Materials, Inc. | Method of forming a cup capacitor |
| KR100438781B1 (ko) * | 2001-12-05 | 2004-07-05 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조방법 |
| US6576941B1 (en) | 2002-02-20 | 2003-06-10 | Samsung Electronics Co., Ltd. | Ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof |
| JP2004152864A (ja) * | 2002-10-29 | 2004-05-27 | Renesas Technology Corp | 半導体装置 |
| JP4290421B2 (ja) * | 2002-12-27 | 2009-07-08 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US7247537B2 (en) * | 2003-08-18 | 2007-07-24 | Samsung Electronics Co., Ltd. | Semiconductor device including an improved capacitor and method for manufacturing the same |
| KR101075528B1 (ko) | 2004-06-30 | 2011-10-20 | 주식회사 하이닉스반도체 | 반도체 장치의 캐패시터 제조방법 |
| KR100614803B1 (ko) * | 2004-10-26 | 2006-08-22 | 삼성전자주식회사 | 커패시터 제조 방법 |
| KR100681274B1 (ko) * | 2004-11-25 | 2007-02-09 | 삼성전자주식회사 | 커패시터 및 그 제조 방법 |
| KR100712502B1 (ko) * | 2004-11-30 | 2007-05-02 | 삼성전자주식회사 | 금속-유전막-금속 캐패시터 및 그 제조방법 |
| KR100734144B1 (ko) | 2004-12-30 | 2007-06-29 | 동부일렉트로닉스 주식회사 | Ｍｉｍ 커패시터 형성 방법 |
| JP4400626B2 (ja) * | 2007-01-31 | 2010-01-20 | エルピーダメモリ株式会社 | 半導体装置及び半導体装置の製造方法 |
-
2010
- 2010-02-25 KR KR1020100017134A patent/KR101583516B1/ko active Active
-
2011
- 2011-02-11 TW TW100104675A patent/TWI590470B/zh active
- 2011-02-18 JP JP2011033172A patent/JP5702183B2/ja active Active
- 2011-02-25 US US13/035,342 patent/US8580648B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110097334A (ko) | 2011-08-31 |
| TW201140852A (en) | 2011-11-16 |
| US8580648B2 (en) | 2013-11-12 |
| KR101583516B1 (ko) | 2016-01-11 |
| JP5702183B2 (ja) | 2015-04-15 |
| JP2011176313A (ja) | 2011-09-08 |
| US20110204427A1 (en) | 2011-08-25 |
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