TWI579865B - 各向異性導電膜、連接方法、及接合體 - Google Patents

各向異性導電膜、連接方法、及接合體 Download PDF

Info

Publication number
TWI579865B
TWI579865B TW101142172A TW101142172A TWI579865B TW I579865 B TWI579865 B TW I579865B TW 101142172 A TW101142172 A TW 101142172A TW 101142172 A TW101142172 A TW 101142172A TW I579865 B TWI579865 B TW I579865B
Authority
TW
Taiwan
Prior art keywords
light
anisotropic conductive
conductive film
fine particles
resin
Prior art date
Application number
TW101142172A
Other languages
English (en)
Other versions
TW201322276A (zh
Inventor
田中芳人
Original Assignee
迪睿合股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 迪睿合股份有限公司 filed Critical 迪睿合股份有限公司
Publication of TW201322276A publication Critical patent/TW201322276A/zh
Application granted granted Critical
Publication of TWI579865B publication Critical patent/TWI579865B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C08K2003/2241—Titanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/41—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the carrier layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29464—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83871—Visible light curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Non-Insulated Conductors (AREA)
  • Adhesive Tapes (AREA)
  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

各向異性導電膜、連接方法、及接合體
本發明係關於可電氣且機械性地連接電子構件之各向異性導電膜、以及使用前述各向異性導電膜的連接方法、及接合體。
一直以來，作為將電子構件與基板連接的手段，一般使用將分散有導電性粒子的熱硬化性樹脂塗佈於剝離膜的帶狀連接材料(例如，各向異性導電膜(ACF,Anisotropic Conductive Film))。
此各向異性導電膜係例如以將撓性印刷基板(FPC,Flexible Printed Circuit)或IC(積體電路，Integrated Circuit)晶片的端子、LCD(液晶顯示器，Liquid Crystal Display)面板的玻璃基板上形成的電極加以連接的情形為主，一般用於將各種端子彼此接著的同時以電氣連接的情形。
將使用前述各向異性導電膜的基板之端子與電子構件之端子加以電氣連接的各向異性導電連接，係通常藉由以前述基板及前述電子構件包夾前述各向異性導電膜而將前述各向異性導電膜加熱及押壓來進行。就此時之加熱溫度而言，例如，170℃~200℃左右。此熱對基板及電子構件會有影響。又，因為基板與電子構件之熱膨張係數的不同，而連接時有時會產生位置失準。
因此，就以低溫將基板之端子與電子構件之端子作各向異性導電連接的方法而言，已提出使用光的連接。以此連接時，一般使用玻璃基板等 之可透光的基板、及含有光硬化性樹脂的各向異性導電膜。而且，通過前述基板，紫外線等之光被照射於前述各向異性導電膜而進行各向異性導電連接。就此連接所使用的各向異性導電膜而言，例如，已提出含有光陽離子聚合性化合物、光陽離子聚合起始劑、光自由基聚合性化合物、及光自由基聚合起始劑的各向異性導電膜(例如，參照專利文獻1)。然而，此情形，前述基板之端子為不可透光的端子時，接觸前述端子的各向異性導電膜之部位會因前述端子遮蔽了自光照射源之光，而無法充分硬化，有所謂基板之端子與電子構件之端子之導通電阻並不充分的問題。
又，因入射至膜的光被多方向地擴散，使膜中含有散射光的粒子的技術為已知(例如，參照專利文獻2及3)，即使將此技術適用於上述各向異性導電膜，亦無法獲得充分的硬化性及導通電阻。
據此，於使用光的各向異性導電連接，目前正冀求即使使用不可透光的端子作為基板之端子的情形，亦可獲得優異的硬化性及優異的導通電阻的各向異性導電膜、以及使用該各向異性導電膜的連接方法、及接合體之提供。
【先前技術文獻】 【專利文獻】
[專利文獻1]國際公開2000/46315號小冊
[專利文獻2]特開平10-226773號公報
[專利文獻3]特開平9-178910號公報
【發明概要】
本發明係以解決習知的上述諸多問題，達成以下目的為課題。即，本發明係以提供於使用光的各向異性導電連接，即使使用不可透光的端子作為基板之端子的情形，可獲得較佳的硬化性及較佳的導通電阻的各向異性導電膜、以及使用該各向異性導電膜的連接方法、及接合體為目的。
就用以解決前述課題之手段而言，有如以下各點。即，
<1>一種各向異性導電膜，其係為使基板之端子與電子構件之端子作各向異性導電連接的各向異性導電膜，其特徵為：具有含有導電性粒子及光硬化性樹脂的導電性粒子含有層、含有光硬化性樹脂的絕緣性接著層；且前述導電性粒子含有層及前述絕緣性接著層之至少一者係含有光散射性微粒子。
<2>如前述<1>記載之各向異性導電膜，其中於導電性粒子含有層及絕緣性接著層中，僅前述絕緣性接著層係含有光散射性微粒子。
<3>如前述<1>至<2>項中任一項記載之各向異性導電膜，其中光散射性微粒子之含量係相對於含有前述光散射性微粒子的層中之樹脂，為0.05質量%~10.00質量%。
<4>如前述<1>至<3>項中任一項記載之各向異性導電膜，其中光散射性微粒子為氧化鈦。
<5>一種連接方法，其係為使基板之端子與電子構件之端子作各向異性導 電連接的連接方法，其特徵包含：貼附步驟，其係於前述基板之端子上將前述<1>至<4>項中任一項記載之各向異性導電膜貼附；及光照射步驟，其係對於載置前述電子構件的各向異性導電膜，自前述基板側照射光。
<6>一種接合體，其特徵係藉由前述<5>記載之連接方法而得。
依據本發明，可解決習知的上述諸多問題、達成前述目的，可提供於使用光的各向異性導電連接，即使使用不可透光的端子作為基板之端子的情形，可獲得較佳的硬化性及較佳的導通電阻的各向異性導電膜、以及使用該各向異性導電膜的連接方法、及接合體。
1‧‧‧各向異性導電膜
2‧‧‧導電性粒子含有層
3‧‧‧絕緣性接著層
4‧‧‧導電性粒子
5‧‧‧光散射性微粒子
6‧‧‧基板
7‧‧‧端子
8‧‧‧端子
9‧‧‧電子構件
10‧‧‧光照射源
第1圖係本發明之各向異性導電膜之一例之概略剖面圖。
第2圖係本發明之各向異性導電膜之一例之概略剖面圖。
第3圖係本發明之各向異性導電膜之一例之概略剖面圖。
第4A圖係用以說明本發明之連接方法之概略圖(其之1)。
第4B圖係用以說明本發明之連接方法之概略圖(其之2)。
第4C圖係用以說明本發明之連接方法之概略圖(其之3)。
【用以實施發明的態樣】 (各向異性導電膜)
本發明之各向異性導電膜係為使基板之端子與電子構件之端子作各向異性導電連接的各向異性導電膜，其至少具有導電性粒子含有層、絕緣性接著層，更因應必要具有其他層。
前述導電性粒子含有層及前述絕緣性接著層之至少任一者係含有光散射性微粒子。
<光散射性微粒子>
就前述光散射性微粒子而言，只要散射前述導電性粒子含有層及前述絕緣性接著層硬化的光的微粒子即可，並未特別限制，可因應目的加以適當選擇，例如，可舉例金屬氧化物等。
就前述金屬氧化物而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例氧化鈦、氧化鋅等。其中於前述導電性粒子含有層及前述絕緣性接著層中光散射性為較佳的觀點來看，以氧化鈦為較佳。
前述氧化鈦可為銳鈦礦(anatase)型、金紅石(rutile)型、板鈦礦(brookite)型之任一者，但金紅石型於光散射之觀點來看，係為較佳的。
就使前述導電性粒子含有層及前述絕緣性接著層硬化的光而言，並未特別限制，可因應目的加以適當選擇，但紫外線為較佳。
就前述光散射性微粒子之平均粒徑而言，並未特別限制，可因應目的加以適當選擇，但10nm~5,000nm為較佳，20nm~1,000nm為更佳，100nm~800nm為最佳。前述平均粒徑低於10nm時，有吸收UV光的情形，一旦超過5,000nm，有難以光散射的情形。前述平均粒徑於前述最佳範圍內時，於光散射效率的觀點來看，係為有利的。
前述平均粒徑可藉由例如，粒度分佈測定裝置(FPAR-1000，大塚電子股份 有限公司製)等測定。
前述光散射性微粒子，於前述導電性粒子含有層及前述絕緣性接著層中，僅含有於前述絕緣性接著層，其於導通電阻、壓痕、及硬化性的觀點來看，係為較佳的。
就前述光散射性微粒子之含量而言，並未特別限制，可因應目的加以適當選擇，但相對於含有前述光散射性微粒子的層中之樹脂，以0.01質量%~15.00質量%為較佳，0.05質量%~10.00質量%為更佳。
其中，前述層中之樹脂係指膜形成樹脂、光硬化性樹脂、及硬化劑、以及形成上述此等之硬化物等之層的樹脂。
<導電性粒子含有層>
前述導電性粒子含有層係至少含有導電性粒子及光硬化性樹脂，更因應必要含有其他成分。
前述導電性粒子含有層係可含有前述光散射性微粒子。
-導電性粒子-
就前述導電性粒子而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例金屬粒子、金屬被覆樹脂粒子等。
就前述金屬粒子而言，例如，可舉例鎳、鈷、銀、銅、金、鈀等。上述此等，可單獨使用一種，亦可併用二種以上。上述此等中，鎳、銀、銅為較佳。於防止上述此等之表面氧化的目的下，可使用於上述此等之表面施予鈀的粒子。再者，亦可使用於上述此等之表面施予金屬突起或為有機物的絕緣皮膜。
就前述金屬被覆樹脂粒子而言，例如，可舉例將樹脂核之表面以鎳、銅、金、及鈀任一者之金屬加以被覆的粒子等。再者，亦可使用於前述樹脂核之表面施 予金屬突起或為有機物的絕緣皮膜者。
就前述金屬被覆樹脂核之方法而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例無電解鍍敷法、濺鍍(sputtering)法等。
就前述樹脂核之材料而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例苯乙烯-二乙烯苯共聚物、苯并胍胺(benzoguanamine)樹脂、交聯聚苯乙烯樹脂、丙烯酸樹脂、苯乙烯-二氧化矽複合樹脂等。
就前述導電性粒子含有層中的導電性粒子之含量而言，並未特別限制，可依據電路構件之配線間距、連接面積等而適宜調整。
-光硬化性樹脂-
就前述光硬化性樹脂而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例光自由基硬化性樹脂、光陽離子硬化性樹脂等。
就前述導電性粒子含有層中的光硬化性樹脂之含量而言，並未特別限制，可因應目的加以適當選擇。
--光自由基硬化性樹脂-
就前述光自由基硬化性樹脂而言，並未特別限制，可因應目的加以適當選擇，例如，丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、四亞甲基二醇四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙〔4-(丙烯醯氧基甲氧基)苯基〕丙烷、2,2-雙〔4-(丙烯醯氧基乙氧基)苯基〕丙烷、二環戊烯基丙烯酸酯、三環癸烷基丙烯酸酯、參(丙烯醯氧基乙基)三聚異氰酸酯、環氧基丙烯酸酯、胺基甲酸酯丙烯酸酯、丙烯酸酯寡聚物等。上述此等可單獨使用一種，亦可併用二種以上。
再者，就前述光自由基硬化性樹脂而言，可舉例將前述丙烯酸酯作成甲基丙烯酸酯者。
上述此等可單獨使用一種，亦可併用二種以上。
--光陽離子硬化性樹脂-
就前述光陽離子硬化性樹脂而言，並未特別限制，可因應目的加以適當選擇，例如，雙酚A型環氧基樹脂、雙酚F型環氧基樹脂、酚醛清漆(novolac)型環氧基樹脂、環氧丙烷(oxetane)樹脂、脂環式環氧基樹脂、及上述此等之改質環氧基樹脂等。上述此等可單獨使用一種，亦可併用二種以上。
又，亦可混合光自由基硬化性樹脂、光陽離子硬化性樹脂而併用。
-其他成分-
就前述其他成分而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例膜形成樹脂、硬化劑、矽烷耦合劑等。
--膜形成樹脂-
就前述膜形成樹脂而言，並未特別限制，可因應目的加以適當選擇，例如，苯氧基樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺基甲酸酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等。前述膜形成樹脂可單獨使用一種，亦可併用二種以上。上述此等中，由製膜性、加工性、連接信賴性的觀點來看，以苯氧基樹脂為最佳。
前述苯氧基樹脂係由雙酚A及表氯醇(epichlorohydrin)所合成的樹脂，可使用適當合成者，亦可使用市售品。
就前述導電性粒子含有層中的膜形成樹脂之含量而言，並未特別限制，可因應目的加以適當選擇。
--硬化劑-
就前述硬化劑而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例藉由波長領域200nm~750nm之光而使活性陽離子種或自由基種產生的硬化劑等。
就產生陽離子種的光陽離子硬化劑而言，並未特別限制，可因應目的加以適當選擇，例如，鋶(sulfonium)鹽、鎓(onium)鹽等，可使各種環氧基樹脂良好地硬化。
就產生自由基種的光自由基硬化劑而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例烷基苯酮(alkylphenone)系光聚合起始劑、醯基膦氧化物(acylphosphine oxide)系光聚合起始劑、二茂鈦(titanocene)系光聚合起始劑、肟酯(oxime ester)系光聚合起始劑等，可使各種丙烯酸酯良好地硬化。
又，就藉由前述波長領域200nm~750nm之光使產生活性陽離子種或自由基種的硬化劑而言，例如，可舉例光自由基硬化劑(商品名：Irgacure 651，BASF公司製)、光陽離子硬化劑(商品名：Irgacure 369，BASF公司製)等。
又，亦可混合光自由基硬化劑、光陽離子硬化劑而併用。
就前述導電性粒子含有層中的硬化劑之含量而言，並未特別限制，可因應目的加以適當選擇。
--矽烷耦合劑-
就前述矽烷耦合劑而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例環氧基系矽烷耦合劑、丙烯酸系矽烷耦合劑、硫醇系矽烷耦合劑、胺系矽烷耦合劑等。
就前述導電性粒子含有層中的矽烷耦合劑之含量而言，並未特別限制，可因 應目的加以適當選擇。
就前述導電性粒子含有層之平均厚度而言，並未特別限制，前述導電性粒子之平均粒徑與前述絕緣性接著層之厚度之關係，可適當選擇，但1μm~10μm為較佳，4μm~8μm為更佳，5μm~7μm為最佳。前述平均厚度低於1μm時，基板之端子與電子構件之端子之間有導電性粒子未充分填充的情形，超過10μm時，有成為連接不良的原因。
其中，前述平均厚度係任意測定前述導電性粒子含有層的五處之厚度時的平均值。
<絕緣性接著層>
前述絕緣性接著層係至少含有光硬化性樹脂，且更因應必要含有其他成分。
前述絕緣性接著層係含有前述光散射性微粒子者為較佳。
-光硬化性樹脂-
就前述光硬化性樹脂而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例於前述導電性粒子含有層之說明所例示的光硬化性樹脂等。
就前述絕緣性接著層中的光硬化性樹脂之含量而言，並未特別限制，可因應目的加以適當選擇。
-其他成分-
就前述其他成分而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例膜形成樹脂、硬化劑、矽烷耦合劑等。
就前述膜形成樹脂、前述硬化劑、前述矽烷耦合劑而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例於前述導電性粒子含有層之說明所例示的膜形成樹脂、前述硬化劑、前述矽烷耦合劑等。
就前述絕緣性接著層中的膜形成樹脂、硬化劑、矽烷耦合劑之含量而言，並未特別限制，可因應目的加以適當選擇。
就前述絕緣性接著層之平均厚度而言，並未特別限制，可以與前述導電性粒子含有層之厚度之關係，加以適當選擇，但5μm~20μm為較佳，10μm~14μm為更佳，11μm~13μm為最佳。前述平均厚度低於5μm時，端子間的樹脂填充率會減少，一旦超過20μm時，會形成連接不良發生的原因。
其中，前述平均厚度係任意測量前述絕緣性接著層之五處之厚度時的平均值。
就前述各向異性導電膜之厚度而言，並未特別限制，可因應目的加以適當選擇。
使用圖面加以說明本發明之各向異性導電膜之一例。第1圖至第3圖係顯示本發明之各向異性導電膜之一例的概略剖面圖。第1圖之各向異性導電膜1係具有導電性粒子含有層2及絕緣性接著層3，導電性粒子含有層2係含有導電性粒子4，絕緣性接著層3係含有光散射性微粒子5。第2圖之各向異性導電膜1係具有導電性粒子含有層2及絕緣性接著層3，導電性粒子含有層2係含有導電性粒子4及光散射性微粒子5。第3圖之各向異性導電膜1係具有導電性粒子含有層2及絕緣性接著層3，導電性粒子含有層2係含有導電性粒子4及光散射性微粒子5，絕緣性接著層3係含有光散射性微粒子5。
(連接方法及接合體)
本發明之連接方法係至少含有貼附步驟及光照射步驟，更因應必要含有其他步驟。
前述連接方法係為使基板之端子與電子構件之端子作各向異性導電連接的 連接方法。
本發明之接合體係藉由本發明之連接方法而製造。
<基板>
前述基板係成為各向異性導電連接之對象之具有端子的基板，只要為可透光使本發明之各向異性導電膜硬化的基板即可，並未特別限制，可因應目的加以適當選擇，例如，玻璃基板、塑膠基板等。
就前述基板之大小、形狀、構造而言，並未特別限制，可因應目的加以適當選擇。
前述端子為未透過使前述各向異性導電膜硬化的光的端子。
就前述端子之材質而言，並未特別限制，可因應目的加以適當選擇，例如，金、銀、銅、鋁等之金屬。
就前述端子之大小、形狀、構造而言，並未特別限制，可因應目的加以適當選擇。
<電子構件>
就前述電子構件而言，只要能成為各向異性導電連接之對象之具有端子的電子構件即可，並未特別限制，可因應目的加以適當選擇，例如，可舉例IC晶片、TAB(捲帶式自動接合(Tape Automated Bonding))帶、液晶面板等。就前述IC晶片而言，例如，可舉例平面顯示器(FPD(Flat Panel Display))中的液晶畫面控制用IC晶片等。
<貼附步驟>
就前述貼附步驟而言，只要於前述基板之端子上將各向異性導電膜貼附的步驟即可，並未特別限制，可因應目的加以適當選擇。
前述各向異性導電膜係本發明之各向異性導電膜。
於前述貼附步驟，通常使前述各向異性導電膜之導電性粒子含有層與前述基板之端子接觸的方式，將前述各向異性導電膜貼附於前述基板之端子上。
<光照射步驟>
就前述光照射步驟而言，只要對於載置前述電子構件的各向異性導電膜，自前述基板側照射光的步驟即可，並未特別限制，可因應目的加以適當選擇。
於前述光照射步驟之前，前述電子構件被載置於前述各向異性導電膜上。此時，前述各向異性導電膜之絕緣性接著層係與前述電子構件之端子連接。
對前述各向異性導電膜之光之照射係自前述基板側來進行。即，對前述各向異性導電膜之光之照射係通過前述基板來進行。此時，因為前述基板之端子為不可透光的端子，來自前述光照射源之光不會直接到達前述基板之端子之光照射源側與反對側的各向異性導電膜之部位。然而，前述各向異性導電膜之導電性粒子含有層及前述絕緣性接著層之至少任一者係藉由含有前述光散射性微粒子，通過前述基板而入射前述各向異性導電膜的光，會藉由前述光散射性微粒子而被散射，而來自前述光照射源之光未直接到達的部位亦會通過光，來自前述光照射源之光未直接到達的各向異性導電膜之部位亦可獲得較佳的硬化性。此結果，可獲得較佳的導通電阻。
就前述光而言，並未特別限制，可因應目的加以適當選擇，但於使前述導電性粒子含有層及前述絕緣性粒子含有層之光硬化性樹脂容易硬化的觀點來看，以紫外線為較佳。就前述紫外線之波長而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例200nm~400nm等。
就前述光之照射源(光照射源)而言，並未特別限制，可因應目的加以適當選擇，例如，可舉例LED(發光二極體(Light Emitting Diode))燈、YAG(釔鋁石榴石(Yttrium Aluminum Garnet))雷射、氙氣燈、鹵素燈等。
就前述光之照射量而言，並未特別限制，可因應目的加以適當選擇。
於前述光照射步驟時，係併用前述各向異性導電膜加熱及押壓的處理者為較佳。
前述加熱及押壓的處理係於進行前述光照射之前開始，至前述光照射結束為止來進行者為較佳。
就前述加熱及押壓的處理而言，並未特別限制，可因應目的加以適當選擇，例如，可使用加熱押壓構件來進行。
就前述加熱押壓構件而言，例如，可舉例具有加熱機構的押壓構件等。就具有前述加熱機構的押壓構件而言，例如，可舉例加熱工具(heat tool)等。
就前述加熱之溫度而言，並未特別限制，可因應目的加以適當選擇，但80℃~140℃為較佳。
就前述押壓之壓力而言，並未特別限制，可因應目的加以適當選擇，但0.1MPa~100MPa為較佳。
就前述加熱及押壓之時間而言，並未特別限制，可因應目的加以適當選擇，例如，0.5秒~120秒。
於本發明之連接方法之一例使用圖面加以說明。第4A圖至第4C圖係用以說明本發明之連接方法的概略圖。首先，於具有端子7的基板6，各向異性導電膜1係使前述各向異性導電膜1之導電性粒子含有層2以與端子7連接的方式貼附(第4A圖)。接著，於此貼附的各向異性導電膜1之絕緣性接 著層3之上，裝置具有端子8的電子構件9。於此時點，基板6與電子構件9尚未被各向異性導電連接(第4B圖)。而且，從電子構件9之上，藉由加熱押壓構件(圖未顯示)將電子構件9加熱及押壓，同時藉由經光照射源10通過基板6而對導電性粒子含有層2及絕緣性接著層3加以光照射，將基板6與電子構件9加以各向異性導電連接(第4C圖)。此時，前述導電性粒子含有層2及前述絕緣性接著層3之至少任一者係藉由含有光散射性微粒子5，通過基板6而對前述各向異性導電膜1入射的光會藉由光散射性微粒子5而被散射，來自光照射源10之光未直接到達的部位亦會有光通過，而來自光照射源10之光未直接到達的各向異性導電膜1之部位亦可獲得較佳的硬化性。其結果可獲得較佳的導通電阻。
【實施例】
以下，說明本發明之實施例，但本發明並未受此等之實施例任何限定。
於實施例，光散射性微粒子之平均粒徑係藉由粒度分佈測定裝置(FPAR-1000，大塚電子股份有限公司製)來測定。
(比較例1) <各向異性導電膜之製作> -導電性粒子含有層之製作-
苯氧基樹脂(品名：YP70，新日鐵化學股份有限公司製)、液狀環氧基樹脂(品名：EP828，三菱化學股份有限公司製)、固形環氧基樹脂(品名：YD014，新日鐵化學股份有限公司製)、導電性粒子(品名：AUL704，積水化學工業股份有限公司製)、及陽離子系硬化劑(光陽離子硬化劑，品名：LW-S1，San-Apro 股份有限公司製)以表1-1所示合成，使用攪拌裝置(自轉公轉混合器，THINKY MIXER，THINKY股份有限公司製)而均一地混合。混合後之摻合物塗佈於經剝離處理的PET(聚對苯二甲酸乙二醇酯(Polyethylene terephthalate)膜)上乾燥後之平均厚度成為6μm，而製作導電性粒子含有層。
-絕緣性接著層之製作-
苯氧基樹脂(品名：YP70，新日鐵化學股份有限公司製)、液狀環氧基樹脂(品名：EP828，三菱化學股份有限公司製)、固形環氧基樹脂(品名：YD014，新日鐵化學股份有限公司製)、及陽離子系硬化劑(光陽離子硬化劑，品名：LW-S1，San-Apro股份有限公司製)以表1-1所示合成，使用攪拌裝置(自轉公轉混合器，THINKY MIXER，THINKY股份有限公司製)而均一地混合。混合後之摻合物塗佈於經剝離處理的PET上乾燥後之平均厚度成為12μm，而製作絕緣性接著層。
上述所獲得的導電性粒子含有層及絕緣性接著層使用輥層壓機(roll laminator)，以輥溫度45℃層壓，獲得各向異性導電膜。
<連接方法(接合體之製造)>
使用於周緣部具有三列交錯配置(staggered arrangement)的金凸塊(bump)的試驗用IC晶片(凸塊大小2，550μm2，凸塊高度15μm，間距15μm(外側凸塊列-中央凸塊列及中央凸塊列-內側凸塊列間之各別距離15μm、各列內之凸塊間之距離15μm))、及具有對應前述試驗用IC晶片之凸塊的Al配線(平均厚度0.5μm)的玻璃基板(玻璃厚度0.7mm)，來進行各向異性導電連接。
具體而言，將比較例1所製作的各向異性導電膜切開成1.5mm寬，以導電性粒子含有層與前述玻璃基板連接的方式，將各向異性導電膜貼附於前述玻璃 基板。
於其上，放置前述試驗用IC晶片並暫時固定後，以加熱工具(heat tool)於1.5mm寬，使用緩衝材(厚度70μm之Teflon(註冊商標))，以壓著條件120℃、80MPa、10秒(工具速度25mm/秒、試料台溫度30℃)開始加熱押壓，開始至5秒後，自前述玻璃基板側360nm，使用具有最大發光波長的LED燈(控制器：ZUV-C20H，頭頂單元(head unit)：ZUV-H20MB，鏡頭單元(lens unit)：ZUV-212L，OMRON股份有限公司製)，以400W/cm2進行5秒之UV照射。又，UV照射之際，仍維持加熱押壓。
<評價>
關於製作的接合體，進行以下之評價。結果示於表1-1。
〔導通電阻〕
於各接合體，將三十處之端子間之電阻值(Ω)，使用四端子法流通電流1mA來測定。求得此時之最大值(max)及平均值(ave.)。
〔壓痕之觀察〕
自接合體之玻璃基板側，以倍率10倍之顯微鏡觀察各向異性導電膜之各向異性導電連接部中的三列交錯配列凸塊之長度方向的中央位置、凸塊列之長度方向的全長L之0.1L及0.9L之位置之三個處所，以下列評價基準評價壓痕之均一性。
-評價基準-
◎：於三個觀察位置各別觀察十處的結果，任一觀察位置有觀察到九處以上之壓痕的情形。
￮：於三個觀察位置各別觀察十處的結果，任一觀察位置於七處或八處觀察 到壓痕的情形，其餘者觀察到九處所以上壓痕的情形。
△：於三個觀察位置各別觀察十處的結果、任一觀察位置於五處或六處觀察到壓痕的情形，其餘者觀察到九處以上壓痕的情形。
×：於三個觀察位置各別觀察十處的結果、任一觀察位置可觀察到壓痕者為低於五處的情形。
〔硬化率〕
於各別之接合體中的Al配線上之導電性粒子含有層及玻璃基板上之導電性粒子含有層測量硬化率。硬化率係由導電性粒子含有層中之樹脂之環氧基的減少率而求得。即，各向異性導電連接前之導電性粒子含有層中之樹脂之環氧基經由各向異性導電連接會減少多少，係測量紅外線吸收光譜之914cm-1之吸收而求得。
(實施例1~13) <各向異性導電膜及接合體之製作>
於比較例1，除了將導電性粒子含有層及絕緣性接著層之合成及平均厚度變換為表1-1至表1-2所示的合成及平均厚度之外，與比較例1同樣地獲得各向異性導電膜。
又，與比較例1同樣地製作接合體。
提供與比較例1相同之評價。結果示於表1-1至表1-2。
(比較例2) <各向異性導電膜及接合體之製作> -各向異性導電膜之製作-
苯氧基樹脂(品名：YP70，新日鐵化學股份有限公司製)、液狀環氧基樹脂 (品名：EP828，三菱化學股份有限公司製)、固形環氧基樹脂(品名：YD014，新日鐵化學股份有限公司製)、導電性粒子(品名：AUL704，積水化學工業股份有限公司製)、陽離子系硬化劑(光陽離子硬化劑，品名：LW-S1，San-Apro股份有限公司製)、及氧化鈦1(R820，石原產業股份有限公司製)以表1-2所示的合成，使用攪拌裝置(自轉公轉混合器，THINKY MIXER，THINKY股份有限公司製)加以均一地混合。將混合後之摻合物塗佈於經剝離處理的PET上成為乾燥後之平均厚度為20μm，而製作僅由導電性粒子含有層而成的各向異性導電膜。
-接合體之製作-
除了於比較例1，將各向異性導電膜替換為上述製作的各向異性導電膜之外，與比較例1相同地製作接合體。
提供與比較例1相同之評價。結果示於表1-2。
表1-1至表1-2中之各成分之摻合量的單位為質量份。光散射性微粒子之含量(質量%)係相對於導電性粒子含有層及絕緣性接著層之各自層中之樹脂的含量(質量%)。
氧化鈦1(R820，石原產業股份有限公司製，金紅石型)之平均粒徑為200nm。
氧化鈦2(MC-50，石原產業股份有限公司製，銳鈦礦型)之平均粒徑為240nm。
氧化鋅(Nanotek ZnO，CIK Nanotec股份有限公司製)之平均粒徑為30nm。
實施例1~13之各向異性導電膜係硬化性較佳，壓痕亦為良好，且導通電阻亦較佳。
尤其，使用僅於絕緣性接著層含有光散射性微粒子的各向異性導電膜的情形 (例如，實施例2)與使用於導電性粒子含有層含有光散射性微粒子的各向異性導電膜的情形(例如，實施例1及3)相比，導通電阻、壓痕、及配線上之硬化率任一者皆更為較佳。此係於導電性粒子含有層含有光散射性微粒子時，基板或基板之端子與導電性粒子含有層之界面上光會散射，一般認為係因入射各向異性導電膜的光量減少。
光散射性微粒子之含量相對於層中之樹脂為0.05質量%~10.00質量%的情形(實施例2、5及6)，光散射性微粒子之含量與前述範圍外的情形(實施例4及7)相比，壓痕及配線上之硬化率更為較佳。
作為光散射性微粒子之氧化鈦為金紅石型的情形(實施例2)，與銳鈦礦型的情形(實施例8)相比，導通電阻、壓痕及配線上之硬化率係更為較佳。
於光散射性微粒子使用氧化鋅的情形(實施例13)，雖然壓痕及配線上之硬化率之任一者皆為較佳，但壓痕及配線上之硬化率相較實施例2係些許的不佳。
導電性粒子含有層之平均厚度為4μm的情形(實施例9)，與實施例2為相同程度地較佳。導電性粒子含有層之平均厚度為8μm的情形(實施例10)，雖然導通電阻、壓痕及配線上之硬化率之任一者皆為較佳，但較實施例2係些許的不佳。
絕緣性接著層之平均厚度為10μm的情形(實施例11)及14μm的情形(實施例12)，雖然導通電阻、壓痕及配線上之硬化率之任一者皆為較佳，但較實施例2係些許的不佳。
另一方面，不含有光散射性微粒子的情形(比較例1)，導通電阻、壓痕、及配線上之硬化率之任一者皆較實施例1~13差。
僅由導電性粒子含有層構成的各向異性導電膜中含有光散射性微粒子的情 形(比較例2)，壓痕較實施例1~13差。
【產業上之利用可能性】
本發明之各向異性導電膜及連接方法係於使用光的各向異性導電連接中，即使使用不可透光的端子作為基板之端子的情形，亦可獲得較佳的硬化性及較佳的導通電阻，故可適合用於使用光的接合體之製造。
1‧‧‧各向異性導電膜
2‧‧‧導電性粒子含有層
3‧‧‧絕緣性接著層
4‧‧‧導電性粒子
5‧‧‧光散射性微粒子

Claims (5)

  1. 一種各向異性導電膜，其係為使基板之端子與電子構件之端子作各向異性導電連接的各向異性導電膜，其特徵為：具有含有導電性粒子、藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的導電性粒子含有層，以及含有藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的絕緣性接著層；且前述導電性粒子含有層及前述絕緣性接著層之至少任一者係含有光散射性微粒子，其中，該光散射性微粒子係平均粒徑為10nm~5,000nm的金屬氧化物，且該光散射性微粒子之含量，相對於含有前述光散射性微粒子的層中之樹脂，為0.05質量%~10.00質量%。
  2. 如申請專利範圍第1項所述之各向異性導電膜，其中導電性粒子含有層及絕緣性接著層中，僅前述絕緣性接著層係含有光散射性微粒子。
  3. 如申請專利範圍第1項所述之各向異性導電膜，其中光散射性微粒子為氧化鈦。
  4. 一種連接方法，其係為使基板之端子與電子構件之端子作各向異性導電連接的連接方法，其特徵包含：貼附步驟，其係於前述基板之端子上貼附各向異性導電膜；及光照射步驟，其係對於載置前述電子構件的各向異性導電膜，自前述基板側照射光； 其中前述各向異性導電膜係具有含有導電性粒子、藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的導電性粒子含有層，以及含有藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的絕緣性接著層；且前述導電性粒子含有層及前述絕緣性接著層之至少任一者含有光散射性微粒子，其中，該光散射性微粒子係平均粒徑為10nm~5,000nm的金屬氧化物，且該光散射性微粒子之含量，相對於含有前述光散射性微粒子的層中之樹脂，為0.05質量%~10.00質量%。
  5. 一種接合體，其係藉由各向異性導電膜將基板之端子與電子構件之端子電性連接而成之接合體，其特徵在於：該各向異性導電膜係具有含有導電性粒子、藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的導電性粒子含有層，以及含有藉由波長領域200nm~750nm之光而產生活性的光硬化劑與光硬化性樹脂的絕緣性接著層；且前述導電性粒子含有層及前述絕緣性接著層之至少任一者係含有光散射性微粒子，其中，該光散射性微粒子係平均粒徑為10nm~5,000nm的金屬氧化物，且該光散射性微粒子之含量，相對於含有前述光散射性微粒子的層中之樹脂，為0.05質量%~10.00質量%。
TW101142172A 2011-11-14 2012-11-13 各向異性導電膜、連接方法、及接合體 TWI579865B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011248891A JP2013105636A (ja) 2011-11-14 2011-11-14 異方性導電フィルム、接続方法、及び接合体

Publications (2)

Publication Number Publication Date
TW201322276A TW201322276A (zh) 2013-06-01
TWI579865B true TWI579865B (zh) 2017-04-21

Family

ID=48429619

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101142172A TWI579865B (zh) 2011-11-14 2012-11-13 各向異性導電膜、連接方法、及接合體

Country Status (4)

Country Link
JP (1) JP2013105636A (zh)
KR (1) KR101582766B1 (zh)
TW (1) TWI579865B (zh)
WO (1) WO2013073563A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6002518B2 (ja) * 2012-09-21 2016-10-05 デクセリアルズ株式会社 異方性導電フィルム、接続方法、及び接合体
JP2015109358A (ja) * 2013-12-05 2015-06-11 デクセリアルズ株式会社 接続構造体の製造方法、及び異方性導電フィルム
JP2015135878A (ja) * 2014-01-16 2015-07-27 デクセリアルズ株式会社 接続体、接続体の製造方法、接続方法、異方性導電接着剤
JP6260313B2 (ja) * 2014-02-04 2018-01-17 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR102552788B1 (ko) * 2014-02-04 2023-07-06 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그 제조 방법
JP6217422B2 (ja) * 2014-02-04 2017-10-25 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP6428325B2 (ja) * 2014-02-04 2018-11-28 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
US11309270B2 (en) 2014-02-04 2022-04-19 Dexerials Corporation Anisotropic conductive film and production method of the same
JP6273875B2 (ja) 2014-02-04 2018-02-07 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP6260312B2 (ja) * 2014-02-04 2018-01-17 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR102450569B1 (ko) * 2014-02-04 2022-10-04 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그 제조 방법
WO2015119090A1 (ja) * 2014-02-04 2015-08-13 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP6233069B2 (ja) * 2014-02-04 2017-11-22 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP6233139B2 (ja) 2014-03-28 2017-11-22 デクセリアルズ株式会社 異方性導電フィルム
WO2016068127A1 (ja) * 2014-10-28 2016-05-06 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
CN110265843B (zh) * 2014-10-28 2021-05-11 迪睿合株式会社 各向异性导电膜
JP2016089153A (ja) * 2014-10-29 2016-05-23 デクセリアルズ株式会社 導電材料
WO2016076398A1 (ja) * 2014-11-12 2016-05-19 デクセリアルズ株式会社 光硬化系異方性導電接着剤、接続体の製造方法及び電子部品の接続方法
JP6679320B2 (ja) * 2015-01-20 2020-04-15 デクセリアルズ株式会社 接続体の製造方法、電子部品の接続方法
WO2016117613A1 (ja) * 2015-01-20 2016-07-28 デクセリアルズ株式会社 接続体の製造方法、電子部品の接続方法、接続体
JP6661886B2 (ja) * 2015-03-11 2020-03-11 日立化成株式会社 フィルム状回路接続材料及び回路部材の接続構造体の製造方法
US10388624B2 (en) * 2015-05-27 2019-08-20 Dexerials Corporation Anisotropic conductive film and connection structure
EP3737725B1 (en) 2018-01-08 2023-03-01 DDP Specialty Electronic Materials US, LLC Epoxy resin adhesive compositions
JP2020024937A (ja) * 2019-10-28 2020-02-13 日立化成株式会社 フィルム状回路接続材料及び回路部材の接続構造体の製造方法
WO2022067506A1 (zh) * 2020-09-29 2022-04-07 重庆康佳光电技术研究院有限公司 显示面板及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046315A1 (fr) * 1999-02-08 2000-08-10 Hitachi Chemical Co., Ltd. Adhesif, structure de connexion d'electrodes, et procede de connexion d'electrodes
TW200914572A (en) * 2007-07-03 2009-04-01 Sony Chem & Inf Device Corp Anisotropic conductive film and manufacturing method for the same, and connected structure
TW200941101A (en) * 2008-03-27 2009-10-01 Sony Chem & Inf Device Corp Anisotropic conductive film, and connected structure and manufacturing method for the same
TW201032241A (en) * 2009-02-27 2010-09-01 Sony Chem & Inf Device Corp Anisotropic conductive film and light-emitting device
TW201120182A (en) * 2009-08-26 2011-06-16 Sekisui Chemical Co Ltd Anisotropic conductive material, connection structure, and connection structure producing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08315946A (ja) * 1995-03-14 1996-11-29 Fujikura Rubber Ltd 基板の接続方法および接続装置
JPH09178910A (ja) 1995-12-26 1997-07-11 Bridgestone Corp 接着性を有する光散乱体
JP3516379B2 (ja) 1996-12-10 2004-04-05 住友ベークライト株式会社 異方導電フィルム
JP2005235530A (ja) * 2004-02-18 2005-09-02 Hitachi Chem Co Ltd 回路接続材料
JP4791028B2 (ja) * 2004-11-19 2011-10-12 三菱樹脂株式会社 光反射体及び光反射体の製造方法
JP2008124024A (ja) * 2007-11-12 2008-05-29 Hitachi Chem Co Ltd 回路電極の接続方法
JP5402804B2 (ja) * 2010-04-12 2014-01-29 デクセリアルズ株式会社 発光装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046315A1 (fr) * 1999-02-08 2000-08-10 Hitachi Chemical Co., Ltd. Adhesif, structure de connexion d'electrodes, et procede de connexion d'electrodes
TW200914572A (en) * 2007-07-03 2009-04-01 Sony Chem & Inf Device Corp Anisotropic conductive film and manufacturing method for the same, and connected structure
TW200941101A (en) * 2008-03-27 2009-10-01 Sony Chem & Inf Device Corp Anisotropic conductive film, and connected structure and manufacturing method for the same
TW201032241A (en) * 2009-02-27 2010-09-01 Sony Chem & Inf Device Corp Anisotropic conductive film and light-emitting device
TW201120182A (en) * 2009-08-26 2011-06-16 Sekisui Chemical Co Ltd Anisotropic conductive material, connection structure, and connection structure producing method

Also Published As

Publication number Publication date
KR101582766B1 (ko) 2016-01-05
TW201322276A (zh) 2013-06-01
JP2013105636A (ja) 2013-05-30
KR20140091055A (ko) 2014-07-18
WO2013073563A1 (ja) 2013-05-23

Similar Documents

Publication Publication Date Title
TWI579865B (zh) 各向異性導電膜、連接方法、及接合體
KR101035864B1 (ko) 이방성 도전막 및 그 제조방법과 접합체
JP6750197B2 (ja) 異方性導電フィルム及び接続構造体
KR102090450B1 (ko) 이방성 도전 필름, 그 제조 방법 및 접속 구조체
TW201512364A (zh) 各向異性導電薄膜、其連接方法及其接合體
WO2021251386A1 (ja) 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法
TW201644337A (zh) 異方向性導電連接結構體、異方向性導電連接方法及異方向性導電接著劑
KR101791285B1 (ko) 이방성 도전막 및 그 제조 방법
JP5286682B2 (ja) 電子機器用接着剤シートの製造方法
JP2020098905A (ja) 電子部品搭載基板および電子機器
JP6900741B2 (ja) 異方導電フィルム、接続構造体及び接続構造体の製造方法
KR20140044747A (ko) 회로 접속 재료 및 그의 제조 방법, 및 이것을 이용한 실장체의 제조 방법
TW201543506A (zh) 異向性導電膜及其製造方法
TW201417657A (zh) 各向異性導電薄膜、其連接方法及其接合體
TW201535550A (zh) 連接構造體之製造方法、及異向性導電膜
TWI795388B (zh) 接著劑膜
JP6302336B2 (ja) 光硬化性導電材料用導電性粒子、光硬化性導電材料、接続構造体の製造方法及び接続構造体
TW201545174A (zh) 異向性導電膜及其製造方法
TWI638025B (zh) Anisotropic conductive film
JP2015135748A (ja) 異方性導電フィルム、接続構造体、接続構造体の製造方法、及び接続構造体の製造装置
TW201621924A (zh) 各向異性導電薄膜、及其連接方法
WO2015174447A1 (ja) 異方性導電フィルム
JP6440946B2 (ja) 接続体の製造方法、電子部品の接続方法及び接続体
JP2016042541A (ja) 接続構造体の製造方法、及び異方性導電接着フィルム
JP7234032B2 (ja) 接着フィルムの製造方法、接着フィルム、及び接続体の製造方法