WO2013073563A1 - 異方性導電フィルム、接続方法、及び接合体 - Google Patents

異方性導電フィルム、接続方法、及び接合体 Download PDF

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Publication number
WO2013073563A1
WO2013073563A1 PCT/JP2012/079486 JP2012079486W WO2013073563A1 WO 2013073563 A1 WO2013073563 A1 WO 2013073563A1 JP 2012079486 W JP2012079486 W JP 2012079486W WO 2013073563 A1 WO2013073563 A1 WO 2013073563A1
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Prior art keywords
anisotropic conductive
conductive film
light
resin
terminal
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PCT/JP2012/079486
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English (en)
French (fr)
Inventor
芳人 田中
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デクセリアルズ株式会社
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Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to KR1020147015790A priority Critical patent/KR101582766B1/ko
Publication of WO2013073563A1 publication Critical patent/WO2013073563A1/ja

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Definitions

  • the present invention relates to an anisotropic conductive film capable of electrically and mechanically connecting electronic components, a connection method using the anisotropic conductive film, and a joined body.
  • a tape-like connection material for example, anisotropic conductive film (ACF)
  • ACF anisotropic conductive film
  • the anisotropic conductive film includes, for example, a terminal of a flexible printed circuit board (FPC) or an IC (integrated circuit, integrated circuit) chip, and an electrode formed on a glass substrate of an LCD (liquid crystal display, liquid crystal display) panel. It is used when various terminals are bonded and electrically connected to each other, starting with the case of connecting the terminals.
  • FPC flexible printed circuit board
  • IC integrated circuit, integrated circuit
  • the anisotropic conductive connection for electrically connecting the terminal of the substrate and the terminal of the electronic component using the anisotropic conductive film is usually performed by sandwiching the anisotropic conductive film between the substrate and the electronic component. This is done by heating and pressing the isotropic conductive film. The heating temperature at this time is, for example, about 170 ° C. to 200 ° C. This heat can affect the substrate and electronic components. Further, misalignment may occur at the time of connection due to a difference in thermal expansion coefficient between the substrate and the electronic component.
  • connection using light has been proposed as a method for anisotropic conductive connection between the terminal of the substrate and the terminal of the electronic component at a low temperature.
  • a substrate such as a glass substrate that transmits light and an anisotropic conductive film containing a photocurable resin are used.
  • the anisotropic conductive film is irradiated with light such as ultraviolet rays through the substrate to perform anisotropic conductive connection.
  • an anisotropic conductive film used for this connection for example, an anisotropic conductive film containing a photocationic polymerizable compound, a photocationic polymerization initiator, a photoradical polymerizable compound, and a photoradical polymerization initiator has been proposed.
  • an anisotropic conductive film capable of obtaining excellent curability and excellent conduction resistance even when a terminal that does not transmit light is used as a terminal of the substrate, and
  • the present condition is that a connection method using the anisotropic conductive film and provision of a bonded body are required.
  • the present invention provides an anisotropic conductive connection that uses light to obtain excellent curability and excellent conduction resistance even when a terminal that does not transmit light is used as the terminal of the substrate.
  • An object is to provide a conductive film, a connection method using the anisotropic conductive film, and a joined body.
  • Means for solving the problems are as follows. That is, ⁇ 1> An anisotropic conductive film for anisotropically conductively connecting a terminal of a substrate and a terminal of an electronic component, A conductive particle-containing layer containing conductive particles and a photocurable resin, and an insulating adhesive layer containing a photocurable resin; At least one of the conductive particle-containing layer and the insulating adhesive layer contains light-scattering fine particles.
  • the conductive particle-containing layer and the insulating adhesive layer only the insulating adhesive layer is the anisotropic conductive film according to ⁇ 1>, which contains light-scattering fine particles.
  • ⁇ 3> The content of ⁇ 1> to ⁇ 2>, wherein the content of the light scattering fine particles is 0.05% by mass to 10.00% by mass with respect to the resin in the layer containing the light scattering fine particles. It is an anisotropic conductive film in any one.
  • ⁇ 4> The anisotropic conductive film according to any one of ⁇ 1> to ⁇ 3>, wherein the light-scattering fine particles are titanium oxide.
  • ⁇ 5> A connection method for anisotropically connecting a terminal of a substrate and a terminal of an electronic component, An attaching step of attaching the anisotropic conductive film according to any one of ⁇ 1> to ⁇ 4> on a terminal of the substrate; A light irradiation step of irradiating light from the substrate side to the anisotropic conductive film on which the electronic component is placed.
  • ⁇ 6> A joined body obtained by the connection method according to ⁇ 5>.
  • the conventional problems can be solved and the object can be achieved, and even in the case of using a terminal that does not transmit light as the terminal of the substrate in the anisotropic conductive connection using light,
  • An anisotropic conductive film capable of obtaining excellent curability and excellent conduction resistance, a connection method using the anisotropic conductive film, and a joined body can be provided.
  • FIG. 1 is a schematic cross-sectional view of an example of the anisotropic conductive film of the present invention.
  • FIG. 2 is a schematic cross-sectional view of an example of the anisotropic conductive film of the present invention.
  • FIG. 3 is a schematic cross-sectional view of an example of the anisotropic conductive film of the present invention.
  • FIG. 4A is a schematic diagram (part 1) for explaining the connection method of the present invention.
  • FIG. 4B is a schematic diagram (part 2) for explaining the connection method of the present invention.
  • FIG. 4C is a schematic diagram (part 3) for explaining the connection method of the present invention.
  • the anisotropic conductive film of the present invention is an anisotropic conductive film for anisotropically connecting a terminal of a substrate and a terminal of an electronic component, and has at least a conductive particle-containing layer and an insulating adhesive layer. Furthermore, it has other layers as required. At least one of the conductive particle-containing layer and the insulating adhesive layer contains light-scattering fine particles.
  • the light-scattering fine particles are not particularly limited as long as they are fine particles that scatter light that cures the conductive particle-containing layer and the insulating adhesive layer, and can be appropriately selected according to the purpose.
  • a metal oxide etc. are mentioned. There is no restriction
  • the titanium oxide may be any one of anatase type, rutile type, and brookite type, but the rutile type is preferable from the viewpoint of light scattering.
  • the light for curing the conductive particle-containing layer and the insulating adhesive layer is not particularly limited and may be appropriately selected depending on the intended purpose, but ultraviolet light is preferable.
  • the average particle diameter of the light-scattering fine particles is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 10 nm to 5,000 nm, more preferably 20 nm to 1,000 nm, and more preferably 100 nm to 800 nm. Particularly preferred. If the average particle size is less than 10 nm, UV light may be absorbed, and if it exceeds 5,000 nm, light scattering may be difficult. When the average particle diameter is within the particularly preferable range, it is advantageous in terms of light scattering efficiency.
  • the average particle diameter can be measured by, for example, a particle size distribution measuring apparatus (FPAR-1000, manufactured by Otsuka Electronics Co., Ltd.).
  • the light-scattering fine particles are preferably contained only in the insulating adhesive layer among the conductive particle-containing layer and the insulating adhesive layer in terms of conduction resistance, indentation, and curability.
  • the resin in the layer refers to a film-forming resin, a photocurable resin, a curing agent, and these It refers to a resin that forms a layer such as a cured product.
  • the conductive particle-containing layer contains at least conductive particles and a photocurable resin, and further contains other components as necessary.
  • the conductive particle-containing layer may contain the light scattering fine particles.
  • -Conductive particles There is no restriction
  • the metal-coated resin particles include particles in which the surface of the resin core is coated with any metal of nickel, copper, gold, and palladium. Furthermore, the surface of the resin core with an insulating film made of metal protrusions or organic matter may be used. There is no restriction
  • the material for the resin core is not particularly limited and may be appropriately selected depending on the intended purpose.
  • Examples thereof include styrene-divinylbenzene copolymer, benzoguanamine resin, cross-linked polystyrene resin, acrylic resin, and styrene-silica composite resin. Is mentioned. There is no restriction
  • photocurable resin- There is no restriction
  • the photo radical curable resin is not particularly limited and may be appropriately selected depending on the intended purpose.
  • the photocationic curable resin is not particularly limited and may be appropriately selected depending on the intended purpose.
  • bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin, oxetane resin, alicyclic type examples thereof include epoxy resins and modified epoxy resins thereof. These may be used individually by 1 type and may use 2 or more types together. Further, a photo radical curable resin or a photo cation curable resin may be mixed and used together.
  • Film-forming resin-- There is no restriction
  • the film forming resin may be used alone or in combination of two or more. Among these, phenoxy resin is particularly preferable from the viewpoints of film formability, processability, and connection reliability.
  • the said phenoxy resin is resin synthesize
  • the curing agent is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include a curing agent that generates active cationic species or radical species by light having a wavelength region of 200 nm to 750 nm. There is no restriction
  • Examples of the curing agent that generates active cationic species or radical species by light in the wavelength region of 200 nm to 750 nm include, for example, a photo radical curing agent (trade name: Irgacure 651, manufactured by BASF), a photo cationic curing agent (product) Name: Irgacure 369, manufactured by BASF). Moreover, you may use together, such as mixing a radical photocuring agent and a photocationic curing agent. There is no restriction
  • the silane coupling agent is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include an epoxy silane coupling agent, an acrylic silane coupling agent, a thiol silane coupling agent, and an amine silane. A coupling agent etc. are mentioned. There is no restriction
  • the average thickness of the conductive particle-containing layer is not particularly limited and can be appropriately selected depending on the average particle diameter of the conductive particles and the thickness of the insulating adhesive layer, and is 1 ⁇ m to 10 ⁇ m. It is preferably 4 ⁇ m to 8 ⁇ m, more preferably 5 ⁇ m to 7 ⁇ m. When the average thickness is less than 1 ⁇ m, the conductive particles may not be sufficiently filled between the terminals of the substrate and the terminals of the electronic component, and when it exceeds 10 ⁇ m, connection failure may be caused.
  • the said average thickness is an average value at the time of measuring the thickness of five places of the said electroconductive particle content layer arbitrarily.
  • the insulating adhesive layer contains at least a photocurable resin, and further contains other components as necessary.
  • the insulating adhesive layer preferably contains the light scattering fine particles.
  • curing agent, a silane coupling agent etc. are mentioned.
  • the film-forming resin, the curing agent, and the silane coupling agent are not particularly limited and may be appropriately selected depending on the purpose.
  • the average thickness of the insulating adhesive layer is not particularly limited and can be appropriately selected in relation to the thickness of the conductive particle-containing layer, but is preferably 5 ⁇ m to 20 ⁇ m, more preferably 10 ⁇ m to 14 ⁇ m, 11 ⁇ m to 13 ⁇ m is particularly preferable.
  • the average thickness is less than 5 ⁇ m, the resin filling rate between the terminals may decrease, and when it exceeds 20 ⁇ m, connection failure may occur.
  • the said average thickness is an average value at the time of measuring the thickness of five places of the said insulating contact bonding layers arbitrarily.
  • the thickness of the anisotropic conductive film is not particularly limited and can be appropriately selected depending on the purpose.
  • FIG. 1 is schematic sectional views showing an example of the anisotropic conductive film of the present invention.
  • An anisotropic conductive film 1 in FIG. 1 has a conductive particle-containing layer 2 and an insulating adhesive layer 3, and the conductive particle-containing layer 2 contains conductive particles 4 and has an insulating property.
  • the adhesive layer 3 contains light scattering fine particles 5.
  • the anisotropic conductive film 1 in FIG. 2 has a conductive particle-containing layer 2 and an insulating adhesive layer 3, and the conductive particle-containing layer 2 contains conductive particles 4 and light-scattering fine particles 5. is doing.
  • the anisotropic conductive film 1 in FIG. 3 has a conductive particle-containing layer 2 and an insulating adhesive layer 3, and the conductive particle-containing layer 2 contains conductive particles 4 and light-scattering fine particles 5.
  • the insulating adhesive layer 3 contains light scattering fine particles 5.
  • connection method and joined body The connection method of the present invention includes at least a sticking step and a light irradiation step, and further includes other steps as necessary.
  • the connection method is a connection method in which the terminals of the substrate and the terminals of the electronic component are anisotropically conductively connected.
  • the joined body of the present invention is manufactured by the connection method of the present invention.
  • the substrate there is no particular limitation as long as it is a substrate having terminals, which is a target of anisotropic conductive connection, and transmits light that cures the anisotropic conductive film of the present invention. It can be appropriately selected depending on the case, and examples thereof include a glass substrate and a plastic substrate. There is no restriction
  • the terminal is a terminal that does not transmit light that cures the anisotropic conductive film.
  • the electronic component is not particularly limited as long as it is an electronic component having a terminal that is a target of anisotropic conductive connection, and can be appropriately selected according to the purpose.
  • an IC chip TAB (Tape Automated) Bonding) tape, liquid crystal panel, and the like.
  • the IC chip include a liquid crystal screen control IC chip in a flat panel display (FPD).
  • the anisotropic conductive film is the anisotropic conductive film of the present invention.
  • the anisotropic conductive film is usually pasted on the terminal of the substrate so that the conductive particle-containing layer of the anisotropic conductive film is in contact with the terminal of the substrate.
  • the light irradiation step is not particularly limited as long as it is a step of irradiating light from the substrate side to the anisotropic conductive film on which the electronic component is placed, and is appropriately selected according to the purpose. be able to.
  • the electronic component Prior to the light irradiation step, the electronic component is placed on the anisotropic conductive film. At this time, the insulating adhesive layer of the anisotropic conductive film is in contact with the terminal of the electronic component.
  • the light irradiation to the anisotropic conductive film is performed from the substrate side. That is, the light irradiation to the anisotropic conductive film is performed through the substrate.
  • the terminal of the substrate is a terminal that does not transmit light
  • light from the light irradiation source is placed on the portion of the anisotropic conductive film on the opposite side of the light irradiation source side of the terminal of the substrate. Does not reach directly.
  • at least one of the conductive particle-containing layer and the insulating adhesive layer of the anisotropic conductive film is incident on the anisotropic conductive film through the substrate by containing the light scattering fine particles.
  • the scattered light is scattered by the light-scattering fine particles, the light spreads to the part where the light from the light irradiation source does not reach directly, and the light from the light irradiation source does not reach directly.
  • Excellent curability can also be obtained in the conductive film portion. As a result, excellent conduction resistance can be obtained.
  • the light is not particularly limited and may be appropriately selected depending on the intended purpose.
  • ultraviolet rays are preferable because the photocurable resin of the conductive particle-containing layer and the insulating particle-containing layer is easily cured.
  • limiting in particular as a wavelength of the said ultraviolet-ray According to the objective, it can select suitably, For example, 200 nm-400 nm etc. are mentioned.
  • limiting in particular as the irradiation amount of the said light According to the objective, it can select suitably.
  • the heating and pressing treatment is preferably started before the light irradiation and is performed until the light irradiation is completed.
  • the process to heat and press there is no restriction
  • the heating and pressing member include a pressing member having a heating mechanism.
  • the pressing member having the heating mechanism include a heat tool.
  • the heating temperature is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 80 ° C to 140 ° C.
  • the pressing pressure is not particularly limited and may be appropriately selected depending on the intended purpose, but is preferably 0.1 MPa to 100 MPa.
  • the heating and pressing time is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include 0.5 seconds to 120 seconds.
  • connection method of the present invention will be described with reference to the drawings.
  • 4A to 4C are schematic diagrams for explaining the connection method of the present invention.
  • the anisotropic conductive film 1 is attached to the substrate 6 having the terminals 7 so that the conductive particle-containing layer 2 of the anisotropic conductive film 1 is in contact with the terminals 7 (FIG. 4A).
  • the electronic component 9 having the terminals 8 is placed on the insulating adhesive layer 3 of the attached anisotropic conductive film 1.
  • the substrate 6 and the electronic component 9 are not yet anisotropically conductively connected (FIG. 4B).
  • the conductive particle-containing layer 2 and the insulating adhesive layer 3 contains the light scattering fine particles 5
  • the light incident on the anisotropic conductive film 1 through the substrate 6 is The anisotropic conductive film 1 is scattered by the light-scattering fine particles 5, and the light reaches the part where the light from the light irradiation source 10 does not reach directly, and the light from the light irradiation source 10 does not reach directly.
  • the site can also have excellent curability. As a result, excellent conduction resistance can be obtained.
  • the average particle size of the light-scattering fine particles was measured by a particle size distribution measuring device (FPAR-1000, manufactured by Otsuka Electronics Co., Ltd.).
  • the conductive particle-containing layer obtained above and the insulating adhesive layer were laminated at a roll temperature of 45 ° C. using a roll laminator to obtain an anisotropic conductive film.
  • Test IC chip gold size: 2,550 ⁇ m 2 , bump height: 15 ⁇ m, pitch: 15 ⁇ m (outer bump row, central bump row, central bump row, inner side) A distance between the bump rows of 15 ⁇ m and a distance of 15 ⁇ m between the bumps in each row)) and a glass substrate having an Al wiring (average thickness of 0.5 ⁇ m) corresponding to the bumps of the test IC chip (glass thickness of 0. 7 mm), and anisotropic conductive connection was performed.
  • the anisotropic conductive film produced in Comparative Example 1 is slit to a width of 1.5 mm, and the anisotropic conductive film is attached to the glass substrate so that the conductive particle-containing layer is in contact with the glass substrate. Pasted.
  • the test IC chip was placed and temporarily fixed, and then a heat tool having a width of 1.5 mm and a buffer material (Teflon (registered trademark) having a thickness of 70 ⁇ m) was used for pressure bonding conditions of 120 ° C., 80 MPa, 10 seconds ( Heating and pressing was started at a tool speed of 25 mm / second and a stage temperature of 30 ° C., and after 5 seconds from the start, an LED lamp having a maximum emission wavelength of 360 nm from the glass substrate side (controller: ZUV-C20H, head unit: ZUV- UV irradiation was performed at 400 W / cm 2 for 5 seconds using an H20MB lens unit: ZUV-212L, manufactured by OMRON Corporation. In addition, the heating press was maintained at the time of UV irradiation.
  • a buffer material Teflon (registered trademark) having a thickness of 70 ⁇ m
  • -Evaluation criteria- ⁇ As a result of observing 10 positions for each of the three observation positions, when indentations were observed at 9 positions or more at any observation position.
  • ⁇ As a result of observing 10 positions for each of the 3 observation positions, at any observation position. Indentation is observed at 7 or 8 locations, and indentation is observed at 9 or more locations in other cases.
  • ⁇ As a result of observing 10 locations for 3 observation locations, 5 or 6 locations at any of the observation locations. Indentation is observed, otherwise indentation is observed at 9 or more locations.
  • X As a result of observing 10 locations for each of the 3 observation positions, less than 5 indentations could be observed at any of the observation locations. If
  • the curing rate was measured for each of the conductive particle-containing layer on the Al wiring and the conductive particle-containing layer on the glass substrate in the joined body.
  • the curing rate was determined by the rate of decrease of the epoxy group of the resin in the conductive particle-containing layer. That is, how much the epoxy group of the resin in the conductive particle-containing layer before anisotropic conductive connection was reduced by anisotropic conductive connection was determined by measuring the absorption at 914 cm ⁇ 1 of the infrared absorption spectrum. It was.
  • Comparative Example 1 was the same as Comparative Example 1 except that the composition and average thickness of the conductive particle-containing layer and the insulating adhesive layer were changed to the composition and average thickness shown in Table 1-1 to Table 1-2. Thus, an anisotropic conductive film was obtained. Further, a joined body was produced in the same manner as in Comparative Example 1. The same evaluation as in Comparative Example 1 was performed. The results are shown in Table 1-1 to Table 1-2.
  • the unit of the amount of each component in Table 1-1 to Table 1-2 is part by mass.
  • Content (mass%) of light-scattering fine particles is content (mass%) with respect to resin in each layer of an electroconductive particle content layer and an insulating contact bonding layer.
  • the average particle diameter of titanium oxide 1 (R820, manufactured by Ishihara Sangyo Co., Ltd., rutile type) is 200 nm.
  • the average particle size of titanium oxide 2 (MC-50, manufactured by Ishihara Sangyo Co., Ltd., anatase type) is 240 nm.
  • the average particle diameter of zinc oxide (Nanotek ZnO, manufactured by CIK Nanotech Co., Ltd.) is 30 nm.
  • the anisotropic conductive films of Examples 1 to 13 had excellent curability, good indentation, and excellent conduction resistance.
  • an anisotropic conductive film containing light-scattering fine particles only in the insulating adhesive layer for example, Example 2
  • an anisotropic material containing light-scattering fine particles in the conductive particle-containing layer is used.
  • the conductive conductive film was used for example, Examples 1 and 3
  • all of the conduction resistance, the impression, and the curing rate on the wiring were further excellent.
  • the conductive particle-containing layer contains light-scattering fine particles, light is scattered at the interface between the substrate or the terminal of the substrate and the conductive particle-containing layer, and the amount of light incident on the anisotropic conductive film is reduced. It is thought to do.
  • the content of the light scattering fine particles is 0.05% by mass to 10.00% by mass with respect to the resin in the layer (Examples 2, 5 and 6)
  • the content of the light scattering fine particles is Compared to the cases outside the above range (Examples 4 and 7), the indentation and the curing rate on the wiring were further excellent.
  • the conduction resistance, the indentation, and the curing rate on the wiring are further superior to the case of the anatase type (Example 8).
  • zinc oxide was used for the light-scattering fine particles (Example 13)
  • both the indentation and the curing rate on the wiring were excellent, but the curing rate on the indentation and the wiring was slightly inferior to that of Example 2.
  • the average thickness of the conductive particle-containing layer was 4 ⁇ m (Example 9), it was as excellent as Example 2.
  • Example 10 When the average thickness of the conductive particle-containing layer was 8 ⁇ m (Example 10), all of the conduction resistance, indentation, and curing rate on the wiring were excellent, but were slightly inferior to Example 2.
  • Example 11 When the average thickness of the insulating adhesive layer is 10 ⁇ m (Example 11) and 14 ⁇ m (Example 12), all of the conduction resistance, indentation, and curing rate on the wiring are excellent. It was slightly inferior.
  • the anisotropic conductive film and connection method of the present invention have excellent curability and excellent conduction resistance even when a terminal that does not transmit light is used as a terminal of a substrate in anisotropic conductive connection using light. Since it can obtain, it can use suitably for manufacture of the conjugate

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Abstract

　基板の端子と電子部品の端子とを異方性導電接続させる異方性導電フィルムであって、導電性粒子及び光硬化性樹脂を含有する導電性粒子含有層と、光硬化性樹脂を含有する絶縁性接着層とを有し、前記導電性粒子含有層及び前記絶縁性接着層の少なくともいずれかが、光散乱性微粒子を含有する異方性導電フィルムである。

Description

異方性導電フィルム、接続方法、及び接合体
　本発明は、電子部品を電気的かつ機械的に接続可能な異方性導電フィルム、並びに、前記異方性導電フィルムを用いた接続方法、及び接合体に関する。
　従来より、電子部品を基板と接続する手段として、導電性粒子が分散された熱硬化性樹脂を剥離フィルムに塗布したテープ状の接続材料（例えば、異方性導電フィルム（ＡＣＦ；Ａｎｉｓｏｔｒｏｐｉｃ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ））が用いられている。
　この異方性導電フィルムは、例えば、フレキシブルプリント基板（ＦＰＣ）やＩＣ（集積回路、Ｉｎｔｅｇｒａｔｅｄ　Ｃｉｒｃｕｉｔ）チップの端子と、ＬＣＤ（液晶ディスプレイ、Ｌｉｑｕｉｄ　Ｃｒｙｓｔａｌ　Ｄｉｓｐｌａｙ）パネルのガラス基板上に形成された電極とを接続する場合を始めとして、種々の端子同士を接着すると共に電気的に接続する場合に用いられている。
　前記異方性導電フィルムを用い基板の端子と電子部品の端子とを電気的に接続する異方性導電接続は、通常、前記基板と前記電子部品とで前記異方性導電フィルムを挟み前記異方性導電フィルムを加熱及び押圧することにより行われる。この際の加熱温度としては、例えば、１７０℃～２００℃程度である。この熱が基板及び電子部品へ影響を及ぼすことがある。また、基板と電子部品との熱膨張係数の違いに起因して接続時に位置ずれが発生することがある。
　そこで、低温で基板の端子と電子部品の端子とを異方性導電接続する方法として、光を用いた接続が提案されている。この接続では、ガラス基板などの光を透過する基板と、光硬化性樹脂を含有する異方性導電フィルムとが用いられる。そして、前記基板越しに紫外線などの光が前記異方性導電フィルムに照射され異方性導電接続が行われる。この接続に用いる異方性導電フィルムとしては、例えば、光カチオン重合性化合物、光カチオン重合開始剤、光ラジカル重合性化合物、及び光ラジカル重合開始剤を含有する異方性導電フィルムが提案されている（例えば、特許文献１参照）。しかし、この場合、前記基板の端子が光を透過しない端子であると、前記端子に接触する異方性導電フィルムの部位は、前記端子によって光照射源からの光が遮られるために、十分に硬化することができず、基板の端子と電子部品の端子との導通抵抗が十分ではないという問題がある。
　なお、フィルムに入射した光を多方向に拡散させるために、光を散乱する粒子をフィルム中に含有させる技術が知られている（例えば、特許文献２及び３参照）が、この技術を上記異方性導電フィルムに適用しても、十分な硬化性、及び導通抵抗を得ることはできない。
　したがって、光を用いた異方性導電接続において、光を透過しない端子を基板の端子として用いた場合でも、優れた硬化性、及び優れた導通抵抗を得ることができる異方性導電フィルム、並びに、該異方性導電フィルムを用いた接続方法、及び接合体の提供が求められているのが現状である。
国際公開２０００／４６３１５号パンフレット 特開平１０－２２６７７３号公報 特開平９－１７８９１０号公報
　本発明は、従来における前記諸問題を解決し、以下の目的を達成することを課題とする。即ち、本発明は、光を用いた異方性導電接続において、光を透過しない端子を基板の端子として用いた場合でも、優れた硬化性、及び優れた導通抵抗を得ることができる異方性導電フィルム、並びに、該異方性導電フィルムを用いた接続方法、及び接合体を提供することを目的とする。
　前記課題を解決するための手段としては、以下の通りである。即ち、
　＜１＞　基板の端子と電子部品の端子とを異方性導電接続させる異方性導電フィルムであって、
　導電性粒子及び光硬化性樹脂を含有する導電性粒子含有層と、光硬化性樹脂を含有する絶縁性接着層とを有し、
　前記導電性粒子含有層及び前記絶縁性接着層の少なくともいずれかが、光散乱性微粒子を含有することを特徴とする異方性導電フィルムである。
　＜２＞　導電性粒子含有層及び絶縁性接着層のうち、前記絶縁性接着層のみが、光散乱性微粒子を含有する前記＜１＞に記載の異方性導電フィルムである。
　＜３＞　光散乱性微粒子の含有量が、前記光散乱性微粒子が含有される層中の樹脂に対して０．０５質量％～１０．００質量％である前記＜１＞から＜２＞のいずれかに記載の異方性導電フィルムである。
　＜４＞　光散乱性微粒子が、酸化チタンである前記＜１＞から＜３＞のいずれかに記載の異方性導電フィルムである。
　＜５＞　基板の端子と電子部品の端子とを異方性導電接続させる接続方法であって、
　前記基板の端子上に前記＜１＞から＜４＞のいずれかに記載の異方性導電フィルムを貼り付ける貼付工程と、
　前記電子部品が載置された前記異方性導電フィルムに対して、前記基板側から光を照射する光照射工程とを含むことを特徴とする接続方法である。
　＜６＞　前記＜５＞に記載の接続方法により得られることを特徴とする接合体である。
　本発明によれば、従来における前記諸問題を解決し、前記目的を達成することができ、光を用いた異方性導電接続において、光を透過しない端子を基板の端子として用いた場合でも、優れた硬化性、及び優れた導通抵抗を得ることができる異方性導電フィルム、並びに、該異方性導電フィルムを用いた接続方法、及び接合体を提供することができる。
図１は、本発明の異方性導電フィルムの一例の概略断面図である。 図２は、本発明の異方性導電フィルムの一例の概略断面図である。 図３は、本発明の異方性導電フィルムの一例の概略断面図である。 図４Ａは、本発明の接続方法を説明するための概略図（その１）である。 図４Ｂは、本発明の接続方法を説明するための概略図（その２）である。 図４Ｃは、本発明の接続方法を説明するための概略図（その３）である。
（異方性導電フィルム）
　本発明の異方性導電フィルムは、基板の端子と電子部品の端子とを異方性導電接続させる異方性導電フィルムであって、導電性粒子含有層と、絶縁性接着層とを少なくとも有し、更に必要に応じて、その他の層を有する。
　前記導電性粒子含有層及び前記絶縁性接着層の少なくともいずれかは、光散乱性微粒子を含有する。
＜光散乱性微粒子＞
　前記光散乱性微粒子としては、前記導電性粒子含有層及び前記絶縁性接着層を硬化させる光を散乱させる微粒子であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、金属酸化物などが挙げられる。
　前記金属酸化物としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、酸化チタン、酸化亜鉛などが挙げられる。これらの中でも、前記導電性粒子含有層及び前記絶縁性接着層において光散乱性に優れる点で、酸化チタンが好ましい。
　前記酸化チタンは、アナターゼ型、ルチル型、ブルッカイト型のいずれであってもよいが、ルチル型であることが、光散乱の点で好ましい。
　前記導電性粒子含有層及び前記絶縁性接着層を硬化させる光としては、特に制限はなく、目的に応じて適宜選択することができるが、紫外線が好ましい。
　前記光散乱性微粒子の平均粒径としては、特に制限はなく、目的に応じて適宜選択することができるが、１０ｎｍ～５，０００ｎｍが好ましく、２０ｎｍ～１，０００ｎｍがより好ましく、１００ｎｍ～８００ｎｍが特に好ましい。前記平均粒径が、１０ｎｍ未満であると、ＵＶ光を吸収することがあり、５，０００ｎｍを超えると、光散乱し難いことがある。前記平均粒径が、前記特に好ましい範囲内であると、光散乱効率の点で有利である。
　前記平均粒径は、例えば、粒度分布測定装置（ＦＰＡＲ－１０００、大塚電子株式会社製）などにより測定することができる。
　前記光散乱性微粒子は、前記導電性粒子含有層及び前記絶縁性接着層のうち、前記絶縁性接着層のみに含有されていることが、導通抵抗、圧痕、及び硬化性の点で好ましい。
　前記光散乱性微粒子の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記光散乱性微粒子が含有される層中の樹脂に対して、０．０１質量％～１５．００質量％が好ましく、０．０５質量％～１０．００質量％がより好ましい
　ここで、前記層中の樹脂とは、膜形成樹脂、光硬化性樹脂、及び硬化剤、並びにこれらの硬化物などの層を形成する樹脂を指す。
＜導電性粒子含有層＞
　前記導電性粒子含有層は、導電性粒子及び光硬化性樹脂を少なくとも含有し、更に必要に応じて、その他の成分を含有する。
　前記導電性粒子含有層は、前記光散乱性微粒子を含有していてもよい。
－導電性粒子－
　前記導電性粒子としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、金属粒子、金属被覆樹脂粒子などが挙げられる。
　前記金属粒子としては、例えば、ニッケル、コバルト、銀、銅、金、パラジウムなどが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。これらの中でも、ニッケル、銀、銅が好ましい。これらの表面酸化を防ぐ目的で、これらの表面に金、パラジウムを施した粒子を用いてもよい。更に、これらの表面に金属突起や有機物で絶縁皮膜を施したものを用いてもよい。
　前記金属被覆樹脂粒子としては、例えば、樹脂コアの表面をニッケル、銅、金、及びパラジウムのいずれかの金属で被覆した粒子などが挙げられる。更に、前記樹脂コアの表面に金属突起や有機物で絶縁皮膜を施したものを用いてもよい。
　前記樹脂コアへの金属の被覆方法としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、無電解めっき法、スパッタリング法などが挙げられる。
　前記樹脂コアの材料としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、スチレン－ジビニルベンゼン共重合体、ベンゾグアナミン樹脂、架橋ポリスチレン樹脂、アクリル樹脂、スチレン－シリカ複合樹脂などが挙げられる。
　前記導電性粒子含有層における前記導電性粒子の含有量としては、特に制限はなく、回路部材の配線ピッチや、接続面積などによって適宜調整することができる。
－光硬化性樹脂－
　前記光硬化性樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、光ラジカル硬化性樹脂、光カチオン硬化性樹脂などが挙げられる。
　前記導電性粒子含有層における前記光硬化性樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－光ラジカル硬化性樹脂－－
　前記光ラジカル硬化性樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、メチルアクリレート、エチルアクリレート、イソプロピルアクリレート、イソブチルアクリレート、エチレングリコールジアクリレート、ジエチレングリコールジアクリレート、トリメチロールプロパントリアクリレート、ジメチロールトリシクロデカンジアクリレート、テトラメチレングリコールテトラアクリレート、２－ヒドロキシ－１，３－ジアクリロキシプロパン、２，２－ビス［４－（アクリロキシメトキシ）フェニル］プロパン、２，２－ビス［４－（アクリロキシエトキシ）フェニル］プロパン、ジシクロペンテニルアクリレート、トリシクロデカニルアクリレート、トリス（アクリロキシエチル）イソシアヌレート、エポキシアクリレート、ウレタンアクリレート、アクリレートオリゴマーなどが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　さらに、前記光ラジカル硬化性樹脂としては、前記アクリレートをメタクリレートにしたものが挙げられる。
　これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
－－光カチオン硬化性樹脂－－
　前記光カチオン硬化性樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ノボラック型エポキシ樹脂、オキセタン樹脂、脂環式エポキシ樹脂、及びこれらの変性エポキシ樹脂などが挙げられる。これらは、１種単独で使用してもよいし、２種以上を併用してもよい。
　また、光ラジカル硬化性樹脂、光カチオン硬化性樹脂を混合などして、併用してもよい。
－その他の成分－
　前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、硬化剤、シランカップリング剤などが挙げられる。
－－膜形成樹脂－－
　前記膜形成樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フェノキシ樹脂、不飽和ポリエステル樹脂、飽和ポリエステル樹脂、ウレタン樹脂、ブタジエン樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリオレフィン樹脂などが挙げられる。前記膜形成樹脂は、１種単独で使用してもよいし、２種以上を併用してもよい。これらの中でも、製膜性、加工性、接続信頼性の点からフェノキシ樹脂が特に好ましい。
　前記フェノキシ樹脂とは、ビスフェノールＡとエピクロルヒドリンより合成される樹脂であって、適宜合成したものを使用してもよいし、市販品を使用してもよい。
　前記導電性粒子含有層における前記膜形成樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－硬化剤－－
　前記硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、波長領域２００ｎｍ～７５０ｎｍの光により活性なカチオン種又はラジカル種を発生させる硬化剤などが挙げられる。
　カチオン種を発生する光カチオン硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、スルホニウム塩、オニウム塩などが挙げられ、種々のエポキシ樹脂を良好に硬化させることができる。
　ラジカル種を発生する光ラジカル硬化剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、アルキルフェノン系光重合開始剤、アシルフォスフィンオキサイド系光重合開始剤、チタノセン系光重合開始剤、オキシムエステル系光重合開始剤などが挙げられ、種々のアクリレートを良好に硬化させることができる。
　なお、前記波長領域２００ｎｍ～７５０ｎｍの光により活性なカチオン種又はラジカル種を発生させる硬化剤としては、例えば、光ラジカル硬化剤（商品名：イルガキュア６５１、ＢＡＳＦ社製）、光カチオン硬化剤（商品名：イルガキュア３６９、ＢＡＳＦ社製）などが挙げられる。
　また、光ラジカル硬化剤、光カチオン硬化剤を混合などして、併用してもよい。
　前記導電性粒子含有層における前記硬化剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－－シランカップリング剤－－
　前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ系シランカップリング剤、アクリル系シランカップリング剤、チオール系シランカップリング剤、アミン系シランカップリング剤などが挙げられる。
　前記導電性粒子含有層における前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記導電性粒子含有層の平均厚みとしては、特に制限はなく、前記導電性粒子の平均粒径、前記絶縁性接着層の厚みとの関係で、適宜選択することができるが、１μｍ～１０μｍが好ましく、４μｍ～８μｍがより好ましく、５μｍ～７μｍが特に好ましい。前記平均厚みが、１μｍ未満であると、基板の端子と電子部品の端子の間に導電性粒子が十分に充填されないことがあり、１０μｍを超えると、接続不良の原因となることがある。
　ここで、前記平均厚みは、任意に前記導電性粒子含有層の５箇所の厚みを測定した際の平均値である。
＜絶縁性接着層＞
　前記絶縁性接着層は、光硬化性樹脂を少なくとも含有し、更に必要に応じて、その他の成分を含有する。
　前記絶縁性接着層は、前記光散乱性微粒子を含有することが好ましい。
－光硬化性樹脂－
　前記光硬化性樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、前記導電性粒子含有層の説明において例示した前記光硬化性樹脂などが挙げられる。
　前記絶縁性接着層における前記光硬化性樹脂の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
－その他の成分－
　前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、硬化剤、シランカップリング剤などが挙げられる。
　前記膜形成樹脂、前記硬化剤、前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、前記導電性粒子含有層の説明において例示した前記膜形成樹脂、前記硬化剤、前記シランカップリング剤などが挙げられる。
　前記絶縁性接着層における前記膜形成樹脂、前記硬化剤、前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記絶縁性接着層の平均厚みとしては、特に制限はなく、前記導電性粒子含有層の厚みとの関係で、適宜選択することができるが、５μｍ～２０μｍが好ましく、１０μｍ～１４μｍがより好ましく、１１μｍ～１３μｍが特に好ましい。前記平均厚みが、５μｍ未満であると、端子間における樹脂充填率が減少することがあり、２０μｍを超えると、接続不良の発生の原因となることがある。
　ここで、前記平均厚みは、任意に前記絶縁性接着層の５箇所の厚みを測定した際の平均値である。
　前記異方性導電フィルムの厚みとしては、特に制限はなく、目的に応じて適宜選択することができる。
　本発明の異方性導電フィルムの一例を、図面を用いて説明する。図１～図３は、本発明の異方性導電フィルムの一例を示す概略断面図である。図１の異方性導電フィルム１は、導電性粒子含有層２と絶縁性接着層３とを有しており、導電性粒子含有層２は、導電性粒子４を含有しており、絶縁性接着層３は、光散乱性微粒子５を含有している。図２の異方性導電フィルム１は、導電性粒子含有層２と絶縁性接着層３とを有しており、導電性粒子含有層２は、導電性粒子４及び光散乱性微粒子５を含有している。図３の異方性導電フィルム１は、導電性粒子含有層２と絶縁性接着層３とを有しており、導電性粒子含有層２は、導電性粒子４及び光散乱性微粒子５を含有しており、絶縁性接着層３は、光散乱性微粒子５を含有している。
（接続方法、及び接合体）
　本発明の接続方法は、貼付工程と、光照射工程とを少なくとも含み、更に必要に応じて、その他の工程を含む。
　前記接続方法は、基板の端子と電子部品の端子とを異方性導電接続させる接続方法である。
　本発明の接合体は、本発明の前記接続方法により製造される。
＜基板＞
　前記基板としては、異方性導電接続の対象となる、端子を有する基板であり、本発明の前記異方性導電フィルムを硬化させる光を透過する基板であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ガラス基板、プラスチック基板などが挙げられる。
　前記基板の大きさ、形状、構造としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記端子は、前記異方性導電フィルムを硬化させる光を透過しない端子である。
　前記端子の材質としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、金、銀、銅、アルミニウムなどの金属が挙げられる。
　前記端子の大きさ、形状、構造としては、特に制限はなく、目的に応じて適宜選択することができる。
＜電子部品＞
　前記電子部品としては、異方性導電接続の対象となる、端子を有する電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ＩＣチップ、ＴＡＢ（Ｔａｐｅ　Ａｕｔｏｍａｔｅｄ　Ｂｏｎｄｉｎｇ）テープ、液晶パネルなどが挙げられる。前記ＩＣチップとしては、例えば、フラットパネルディスプレイ（ＦＰＤ）における液晶画面制御用ＩＣチップなどが挙げられる。
＜貼付工程＞
　前記貼付工程としては、前記基板の端子上に異方性導電フィルムを貼り付ける工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記異方性導電フィルムは、本発明の前記異方性導電フィルムである。
　前記貼付工程においては、通常、前記異方性導電フィルムの前記導電性粒子含有層が前記基板の端子に接触するように、前記異方性導電フィルムを前記基板の端子上に貼り付ける。
＜光照射工程＞
　前記光照射工程としては、前記電子部品が載置された前記異方性導電フィルムに対して、前記基板側から光を照射する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記光照射工程の前に、前記電子部品は、前記異方性導電フィルム上に載置される。この際、前記異方性導電フィルムの前記絶縁性接着層が、前記電子部品の端子と接している。
　前記異方性導電フィルムへの光の照射は、前記基板側から行われる。即ち、前記異方性導電フィルムへの光の照射は、前記基板越しに行われる。この際、前記基板の端子は、光を透過しない端子であるため、前記基板の端子の光照射源側と反対側にある前記異方性導電フィルムの部位には、前記光照射源からの光が直接には届かない。しかし、前記異方性導電フィルムの前記導電性粒子含有層及び前記絶縁性接着層の少なくともいずれかが、前記光散乱性微粒子を含有することにより、前記基板越しに前記異方性導電フィルムに入射した光は、前記光散乱性微粒子により散乱され、前記光照射源からの光が直接には届かない部位にも光が行き渡り、前記光照射源からの光が直接には届かない前記異方性導電フィルムの部位も優れた硬化性を得ることができる。その結果、優れた導通抵抗を得ることができる。
　前記光としては、特に制限はなく、目的に応じて適宜選択することができるが、前記導電性粒子含有層及び前記絶縁性粒子含有層の光硬化性樹脂を硬化させやすい点で、紫外線が好ましい。前記紫外線の波長としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、２００ｎｍ～４００ｎｍなどが挙げられる。
　前記光の照射源（光照射源）としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎｇ　Ｄｉｏｄｅ）ランプ、ＹＡＧ（Ｙｔｔｒｉｕｍ　Ａｌｕｍｉｎｕｍ　Ｇａｒｎｅｔ）レーザ、キセノンランプ、ハロゲンランプなどが挙げられる。
　前記光の照射量としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記光照射工程の際には、前記異方性導電フィルムを加熱及び押圧する処理を併用することが好ましい。
　前記加熱及び押圧する処理は、前記光照射を行う前に開始し、前記光照射が終了するまで行うことが好ましい。
　前記加熱及び押圧する処理としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、加熱押圧部材を用いて行うことができる。
　前記加熱押圧部材としては、例えば、加熱機構を有する押圧部材などが挙げられる。前記加熱機構を有する押圧部材としては、例えば、ヒートツールなどが挙げられる。
　前記加熱の温度としては、特に制限はなく、目的に応じて適宜選択することができるが、８０℃～１４０℃が好ましい。
　前記押圧の圧力としては、特に制限はなく、目的に応じて適宜選択することができるが、０．１ＭＰａ～１００ＭＰａが好ましい。
　前記加熱及び押圧の時間としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、０．５秒間～１２０秒間が挙げられる。
　本発明の接続方法の一例について図面を用いて説明する。図４Ａ～図４Ｃは、本発明の接続方法を説明するための概略図である。まず、端子７を有する基板６に、異方性導電フィルム１を前記異方性導電フィルム１の導電性粒子含有層２が端子７に接するように貼り付ける（図４Ａ）。続いて、その貼り付けた異方性導電フィルム１の絶縁性接着層３の上に、端子８を有する電子部品９を載置する。この時点では、基板６と電子部品９は、まだ異方性導電接続されていない（図４Ｂ）。そして、電子部品９の上から加熱押圧部材（図示せず）により電子部品９を加熱及び押圧しつつ、光照射源１０から基板６越しに導電性粒子含有層２及び絶縁性接着層３へ光照射することにより、基板６と電子部品９を異方性導電接続する（図４Ｃ）。この際に、前記導電性粒子含有層２及び前記絶縁性接着層３の少なくともいずれかが光散乱性微粒子５を含有することにより、基板６越しに前記異方性導電フィルム１に入射した光は、光散乱性微粒子５により散乱され、光照射源１０からの光が直接には届かない部位にも光が行き渡り、光照射源１０からの光が直接には届かない異方性導電フィルム１の部位も優れた硬化性を得ることができる。その結果、優れた導通抵抗を得ることができる。
　以下、本発明の実施例を説明するが、本発明は、これらの実施例に何ら限定されるものではない。
　実施例において、光散乱性微粒子の平均粒径は、粒度分布測定装置（ＦＰＡＲ－１０００、大塚電子株式会社製）により測定した。
（比較例１）
＜異方性導電フィルムの作製＞
－導電性粒子含有層の作製－
　フェノキシ樹脂（品名：ＹＰ７０、新日鐵化学株式会社製）、液状エポキシ樹脂（品名：ＥＰ８２８、三菱化学株式会社製）、固形エポキシ樹脂（品名：ＹＤ０１４、新日鐵化学株式会社製）、導電性粒子（品名：ＡＵＬ７０４、積水化学工業株式会社製）、及びカチオン系硬化剤（光カチオン硬化剤、品名：ＬＷ－Ｓ１、サンアプロ株式会社製）を表１－１に示す配合で、撹拌装置（自転公転ミキサー、あわとり練太郎、株式会社シンキー製）を用いて均一に混合した。混合後の配合物を剥離処理したＰＥＴ（ポリエチレンテレフタレートフィルム）上に乾燥後の平均厚みが６μｍとなるように塗布し、導電性粒子含有層を作製した。
－絶縁性接着層の作製－
　フェノキシ樹脂（品名：ＹＰ７０、新日鐵化学株式会社製）、液状エポキシ樹脂（品名：ＥＰ８２８、三菱化学株式会社製）、固形エポキシ樹脂（品名：ＹＤ０１４、新日鐵化学株式会社製）、及びカチオン系硬化剤（光カチオン硬化剤、品名：ＬＷ－Ｓ１、株式会社サンアプロ製）を表１－１に示す配合で、撹拌装置（自転公転ミキサー、あわとり練太郎、株式会社シンキー製）を用いて均一に混合した。混合後の配合物を剥離処理したＰＥＴ上に乾燥後の平均厚みが１２μｍとなるように塗布し、絶縁性接着層を作製した。
　上記で得られた導電性粒子含有層と絶縁性接着層とをロールラミネータを用いて、ロール温度４５℃にてラミネートし、異方性導電フィルムを得た。
＜接続方法（接合体の製造）＞
　周縁部に３列千鳥配置（ｓｔａｇｇｅｒｅｄ　ａｒｒａｎｇｅｍｅｎｔ）された金バンプを有する試験用ＩＣチップ（バンプサイズ２，５５０μｍ２、バンプ高さ１５μｍ、ピッチ１５μｍ（外側バンプ列と中央バンプ列及び中央バンプ列と内側バンプ列間のそれぞれの距離１５μｍ、各列内のバンプ間の距離１５μｍ））と、前記試験用ＩＣチップのバンプに対応するＡｌ配線（平均厚み０．５μｍ）を有するガラス基板（ガラス厚み０．７ｍｍ）とを用い、異方性導電接続を行った。
　具体的には、比較例１で作製した異方性導電フィルムを１．５ｍｍ幅にスリットして、導電性粒子含有層が前記ガラス基板に接するように、異方性導電フィルムを前記ガラス基板に貼り付けた。
　その上に、前記試験用ＩＣチップを置いて仮固定した後、ヒートツール１．５ｍｍ幅で緩衝材（厚み７０μｍのテフロン（登録商標））を用いて、圧着条件１２０℃、８０ＭＰａ、１０秒間（ツールスピード２５ｍｍ／秒間、ステージ温度３０℃）で加熱押圧を開始し、開始から５秒間後に、前記ガラス基板側から３６０ｎｍに最大発光波長を持つＬＥＤランプ（コントローラー：ＺＵＶ－Ｃ２０Ｈ、ヘッドユニット：ＺＵＶ－Ｈ２０ＭＢ、レンズユニット：ＺＵＶ－２１２Ｌ、オムロン株式会社製）を用いて４００Ｗ／ｃｍ２で５秒間、ＵＶ照射を行った。なお、ＵＶ照射の際、加熱押圧は維持していた。
＜評価＞
　作製した接合体について、以下の評価を行った。結果を表１－１に示す。
〔導通抵抗〕
　各接合体について、３０箇所の端子間の抵抗値（Ω）を、４端子法を用いて電流１ｍＡを流し測定した。その際の最大値（ｍａｘ）、及び平均値（ａｖｅ．）を求めた。
〔圧痕の観察〕
　接合体のガラス基板側から、異方性導電フィルムの異方性導電接続部における、３列千鳥配列バンプの長手方向の中央位置、バンプ列の長手方向の全長Ｌの０．１Ｌ及び０．９Ｌの位置の３箇所を倍率１０倍で顕微鏡観察し、圧痕の均一性について以下の評価基準で評価した。
－評価基準－
　◎：３つの観察位置についてそれぞれ１０箇所観察した結果、いずれの観察位置においても９箇所以上で圧痕が観察された場合
　○：３つの観察位置についてそれぞれ１０箇所観察した結果、いずれかの観察位置において７箇所又は８箇所で圧痕が観察され、それ以外では９箇所以上で圧痕が観察された場合
　△：３つの観察位置についてそれぞれ１０箇所観察した結果、いずれかの観察位置において５箇所又は６箇所で圧痕が観察され、それ以外では９箇所以上で圧痕が観察された場合
　×：３つの観察位置についてそれぞれ１０箇所観察した結果、いずれかの観察位置で圧痕が観察できたのが５箇所未満であった場合
〔硬化率〕
　接合体におけるＡｌ配線上の導電性粒子含有層及びガラス基板上の導電性粒子含有層のそれぞれについて、硬化率を測定した。硬化率は、導電性粒子含有層中の樹脂のエポキシ基の減少率により求めた。即ち、異方性導電接続前の導電性粒子含有層中の樹脂のエポキシ基が異方性導電接続によりどれだけ減少したかを、赤外吸収スペクトルの９１４ｃｍ－１の吸収を測定することで求めた。
（実施例１～１３）
＜異方性導電フィルム及び接合体の作製＞
　比較例１において、導電性粒子含有層、及び絶縁性接着層の配合及び平均厚みを、表１－１～表１－２に示す配合及び平均厚みに変えた以外は、比較例１と同様にして、異方性導電フィルムを得た。
　また、比較例１と同様にして、接合体を作製した。
　比較例１と同様の評価に供した。結果を表１－１～表１－２に示す。
（比較例２）
＜異方性導電フィルム及び接合体の作製＞
－異方性導電フィルムの作製－
　フェノキシ樹脂（品名：ＹＰ７０、新日鐵化学株式会社製）、液状エポキシ樹脂（品名：ＥＰ８２８、三菱化学株式会社製）、固形エポキシ樹脂（品名：ＹＤ０１４、新日鐵化学株式会社製）、導電性粒子（品名：ＡＵＬ７０４、積水化学工業株式会社製）、カチオン系硬化剤（光カチオン硬化剤、品名：ＬＷ－Ｓ１、株式会社サンアプロ製）、及び酸化チタン１（Ｒ８２０、石原産業株式会社製）を表１－２に示す配合で、撹拌装置（自転公転ミキサー、あわとり練太郎、株式会社シンキー製）を用いて均一に混合した。混合後の配合物を剥離処理したＰＥＴ上に乾燥後の平均厚みが２０μｍとなるように塗布し、導電性粒子含有層のみからなる異方性導電フィルムを作製した。
－接合体の作製－
　比較例１において、異方性導電フィルムを上記で作製した異方性導電フィルムに代えた以外は、比較例１と同様にして、接合体を作製した。
　比較例１と同様の評価に供した。結果を表１－２に示す。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
　表１－１～表１－２中の各成分の配合量の単位は、質量部である。光散乱性微粒子の含有量（質量％）は、導電性粒子含有層及び絶縁性接着層のそれぞれの層中の樹脂に対する含有量（質量％）である。
　酸化チタン１（Ｒ８２０、石原産業株式会社製、ルチル型）の平均粒径は、２００ｎｍである。
　酸化チタン２（ＭＣ－５０、石原産業株式会社製、アナターゼ型）の平均粒径は、２４０ｎｍである。
　酸化亜鉛（Ｎａｎｏｔｅｋ　ＺｎＯ、ＣＩＫナノテック株式会社製）の平均粒径は、３０ｎｍである。
　実施例１～１３の異方性導電フィルムは、硬化性に優れ、圧痕も良好であり、かつ導通抵抗にも優れていた。
　特に、絶縁性接着層にのみ光散乱性微粒子を含有させた異方性導電フィルムを用いた場合（例えば、実施例２）は、導電性粒子含有層に光散乱性微粒子を含有させた異方性導電フィルムを用いた場合（例えば、実施例１及び３）に比べ、導通抵抗、圧痕、及び配線上の硬化率のいずれもが更に優れていた。これは、導電性粒子含有層に光散乱性微粒子を含有すると、基板又は基板の端子と導電性粒子含有層との界面で光が散乱してしまい、異方性導電フィルムに入射する光量が減少するためと考えられる。
　光散乱性微粒子の含有量が、層中の樹脂に対して、０．０５質量％～１０．００質量％の場合（実施例２、５及び６）は、光散乱性微粒子の含有量が、前記範囲外の場合（実施例４及び７）に比べて、圧痕及び配線上の硬化率が更に優れていた。
　光散乱性微粒子としての酸化チタンがルチル型の場合（実施例２）は、アナターゼ型の場合（実施例８）に比べて、導通抵抗、圧痕及び配線上の硬化率が更に優れていた。
　光散乱性微粒子に酸化亜鉛を用いた場合（実施例１３）は、圧痕及び配線上の硬化率のいずれも優れるものの、圧痕及び配線上の硬化率が、実施例２よりは若干劣っていた。
　導電性粒子含有層の平均厚みを４μｍにした場合（実施例９）は、実施例２と同程度に優れていた。導電性粒子含有層の平均厚みを８μｍにした場合（実施例１０）は、導通抵抗、圧痕及び配線上の硬化率のいずれも優れるものの、実施例２よりは若干劣っていた。
　絶縁性接着層の平均厚みを１０μｍにした場合（実施例１１）及び１４μｍにした場合（実施例１２）は、導通抵抗、圧痕及び配線上の硬化率のいずれも優れるものの、実施例２よりは若干劣っていた。
　一方、光散乱性微粒子を含有しない場合（比較例１）には、導通抵抗、圧痕、及び配線上の硬化率のいずれもが、実施例１～１３よりも劣っていた。
　導電性粒子含有層のみからなる異方性導電フィルムに光散乱性微粒子を含有した場合（比較例２）には、圧痕が、実施例１～１３よりも劣っていた。
　本発明の異方性導電フィルム及び接続方法は、光を用いた異方性導電接続において、光を透過しない端子を基板の端子として用いた場合でも、優れた硬化性、及び優れた導通抵抗を得ることができることから、光を用いた接合体の製造に好適に用いることができる。
　　１　　異方性導電フィルム
　　２　　導電性粒子含有層
　　３　　絶縁性接着層
　　４　　導電性粒子
　　５　　光散乱性微粒子
　　６　　基板
　　７　　端子
　　８　　端子
　　９　　電子部品
　　１０　光照射源

Claims (6)

  1. 　基板の端子と電子部品の端子とを異方性導電接続させる異方性導電フィルムであって、
    　導電性粒子及び光硬化性樹脂を含有する導電性粒子含有層と、光硬化性樹脂を含有する絶縁性接着層とを有し、
    　前記導電性粒子含有層及び前記絶縁性接着層の少なくともいずれかが、光散乱性微粒子を含有することを特徴とする異方性導電フィルム。
  2. 　導電性粒子含有層及び絶縁性接着層のうち、前記絶縁性接着層のみが、光散乱性微粒子を含有する請求項１に記載の異方性導電フィルム。
  3. 　光散乱性微粒子の含有量が、前記光散乱性微粒子が含有される層中の樹脂に対して０．０５質量％～１０．００質量％である請求項１から２のいずれかに記載の異方性導電フィルム。
  4. 　光散乱性微粒子が、酸化チタンである請求項１から３のいずれかに記載の異方性導電フィルム。
  5. 　基板の端子と電子部品の端子とを異方性導電接続させる接続方法であって、
    　前記基板の端子上に請求項１から４のいずれかに記載の異方性導電フィルムを貼り付ける貼付工程と、
    　前記電子部品が載置された前記異方性導電フィルムに対して、前記基板側から光を照射する光照射工程とを含むことを特徴とする接続方法。
  6. 　請求項５に記載の接続方法により得られることを特徴とする接合体。
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