TWI561913B - Resist composition and method of forming resist pattern - Google Patents
Resist composition and method of forming resist patternInfo
- Publication number
- TWI561913B TWI561913B TW102100415A TW102100415A TWI561913B TW I561913 B TWI561913 B TW I561913B TW 102100415 A TW102100415 A TW 102100415A TW 102100415 A TW102100415 A TW 102100415A TW I561913 B TWI561913 B TW I561913B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist
- forming
- resist pattern
- composition
- resist composition
- Prior art date
Links
Classifications
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B15/00—Other brushes; Brushes with additional arrangements
- A46B15/0055—Brushes combined with other articles normally separate from the brushing process, e.g. combs, razors, mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B7/00—Bristle carriers arranged in the brush body
- A46B7/04—Bristle carriers arranged in the brush body interchangeably removable bristle carriers
- A46B7/042—Clip or snap connection for bristle carriers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B2200/00—Brushes characterized by their functions, uses or applications
- A46B2200/10—For human or animal care
- A46B2200/1066—Toothbrush for cleaning the teeth or dentures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012003412A JP5898962B2 (ja) | 2012-01-11 | 2012-01-11 | レジスト組成物及びレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201348859A TW201348859A (zh) | 2013-12-01 |
TWI561913B true TWI561913B (en) | 2016-12-11 |
Family
ID=48744133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102100415A TWI561913B (en) | 2012-01-11 | 2013-01-07 | Resist composition and method of forming resist pattern |
Country Status (4)
Country | Link |
---|---|
US (1) | US8956800B2 (zh) |
JP (1) | JP5898962B2 (zh) |
KR (1) | KR101925154B1 (zh) |
TW (1) | TWI561913B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6132554B2 (ja) * | 2013-01-08 | 2017-05-24 | アイバイツ株式会社 | 光塩基発生剤組成物 |
WO2015093323A1 (ja) * | 2013-12-19 | 2015-06-25 | 日産化学工業株式会社 | ラクトン構造含有ポリマーを含む電子線レジスト下層膜形成組成物 |
US9519218B2 (en) * | 2014-09-16 | 2016-12-13 | Sumitomo Chemical Company, Limited | Resin, resist composition and method for producing resist pattern |
CN106094431B (zh) | 2015-04-30 | 2020-06-26 | 罗门哈斯电子材料韩国有限公司 | 光致抗蚀剂组合物和方法 |
KR101848656B1 (ko) | 2015-04-30 | 2018-04-13 | 롬엔드하스전자재료코리아유한회사 | 오버코트 조성물 및 포토리소그래피 방법 |
TWI636326B (zh) | 2015-05-15 | 2018-09-21 | 南韓商羅門哈斯電子材料韓國公司 | 光鹼產生劑及包括其的光致抗蝕劑組成物 |
CN106556972B (zh) | 2015-09-30 | 2021-07-27 | 罗门哈斯电子材料韩国有限公司 | 用于光刻的罩面层组合物和方法 |
TWI672562B (zh) | 2015-09-30 | 2019-09-21 | 南韓商羅門哈斯電子材料韓國公司 | 光致抗蝕劑組合物及方法 |
TWI743143B (zh) * | 2016-08-10 | 2021-10-21 | 日商Jsr股份有限公司 | 半導體用抗蝕劑底層膜形成組成物、抗蝕劑底層膜、抗蝕劑底層膜的形成方法及圖案化基板的製造方法 |
JP7010195B2 (ja) * | 2017-11-29 | 2022-01-26 | 信越化学工業株式会社 | パターン形成方法 |
KR102177417B1 (ko) | 2017-12-31 | 2020-11-11 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 조성물 및 방법 |
AR126215A1 (es) * | 2021-06-23 | 2023-09-27 | Hoffmann La Roche | Proceso novedoso |
Citations (4)
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US20020187436A1 (en) * | 2001-04-27 | 2002-12-12 | Ernst Christian Richter | Method for structuring a photoresist layer |
EP2003501A1 (en) * | 2007-06-13 | 2008-12-17 | Xerox Corporation | Inkless reimageable printing paper and method |
US20110233048A1 (en) * | 2008-12-02 | 2011-09-29 | Wako Pure Chemical Industries, Ltd. | Photobase generator |
TW201341959A (zh) * | 2011-12-21 | 2013-10-16 | Tokyo Ohka Kogyo Co Ltd | 光阻圖型之形成方法 |
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US5650261A (en) | 1989-10-27 | 1997-07-22 | Rohm And Haas Company | Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system |
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JP5681942B2 (ja) | 2010-04-15 | 2015-03-11 | 学校法人東京理科大学 | 水系エポキシ樹脂硬化用微粒子及び水系エポキシ樹脂硬化用微粒子の製造方法 |
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JP5884521B2 (ja) | 2011-02-09 | 2016-03-15 | 信越化学工業株式会社 | パターン形成方法 |
JP5898985B2 (ja) | 2011-05-11 | 2016-04-06 | 東京応化工業株式会社 | レジストパターン形成方法 |
KR101936435B1 (ko) * | 2011-09-22 | 2019-01-08 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물, 레지스트 패턴 형성 방법 |
JP5871591B2 (ja) * | 2011-11-30 | 2016-03-01 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP5851277B2 (ja) * | 2012-02-23 | 2016-02-03 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP6046549B2 (ja) * | 2013-04-25 | 2016-12-14 | 東洋紡Stc株式会社 | 伸縮性編地 |
-
2012
- 2012-01-11 JP JP2012003412A patent/JP5898962B2/ja active Active
-
2013
- 2013-01-02 US US13/732,632 patent/US8956800B2/en active Active
- 2013-01-07 KR KR1020130001737A patent/KR101925154B1/ko active IP Right Grant
- 2013-01-07 TW TW102100415A patent/TWI561913B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020187436A1 (en) * | 2001-04-27 | 2002-12-12 | Ernst Christian Richter | Method for structuring a photoresist layer |
EP2003501A1 (en) * | 2007-06-13 | 2008-12-17 | Xerox Corporation | Inkless reimageable printing paper and method |
US20110233048A1 (en) * | 2008-12-02 | 2011-09-29 | Wako Pure Chemical Industries, Ltd. | Photobase generator |
TW201341959A (zh) * | 2011-12-21 | 2013-10-16 | Tokyo Ohka Kogyo Co Ltd | 光阻圖型之形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101925154B1 (ko) | 2018-12-04 |
US20130177853A1 (en) | 2013-07-11 |
KR20130082461A (ko) | 2013-07-19 |
JP2013142810A (ja) | 2013-07-22 |
JP5898962B2 (ja) | 2016-04-06 |
TW201348859A (zh) | 2013-12-01 |
US8956800B2 (en) | 2015-02-17 |
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