SG11201400460WA - Composition for forming fine resist pattern and pattern forming method using same - Google Patents

Composition for forming fine resist pattern and pattern forming method using same

Info

Publication number
SG11201400460WA
SG11201400460WA SG11201400460WA SG11201400460WA SG11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA
Authority
SG
Singapore
Prior art keywords
pattern
composition
same
forming
fine resist
Prior art date
Application number
SG11201400460WA
Inventor
Tetsuo Okayasu
Takashi Sekito
Masahiro Ishii
Original Assignee
Az Electronic Materials Ip Japan K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Ip Japan K K filed Critical Az Electronic Materials Ip Japan K K
Publication of SG11201400460WA publication Critical patent/SG11201400460WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/56—Acrylamide; Methacrylamide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201400460WA 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same SG11201400460WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011224030A JP5758263B2 (en) 2011-10-11 2011-10-11 Composition for forming fine resist pattern and pattern forming method using the same
PCT/JP2012/076167 WO2013054803A1 (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same

Publications (1)

Publication Number Publication Date
SG11201400460WA true SG11201400460WA (en) 2014-05-29

Family

ID=48081858

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400460WA SG11201400460WA (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same

Country Status (7)

Country Link
US (2) US9448485B2 (en)
JP (1) JP5758263B2 (en)
KR (1) KR101681524B1 (en)
CN (1) CN103858058B (en)
SG (1) SG11201400460WA (en)
TW (1) TWI617880B (en)
WO (1) WO2013054803A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6134619B2 (en) * 2013-09-13 2017-05-24 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method
JP6340304B2 (en) * 2013-11-29 2018-06-06 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method
JP6286227B2 (en) * 2014-02-21 2018-02-28 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
JP6531397B2 (en) 2014-03-07 2019-06-19 Jsr株式会社 Pattern forming method and composition used therefor
US9529265B2 (en) * 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
JP6459759B2 (en) * 2014-05-26 2019-01-30 信越化学工業株式会社 Pattern forming method and shrink agent
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
KR101994793B1 (en) * 2014-09-02 2019-07-01 후지필름 가부시키가이샤 Pattern forming method, method for manufacturing electronic device, resist composition and resist film
TWI682250B (en) 2014-10-17 2020-01-11 日商東京應化工業股份有限公司 Method of forming resist pattern
JP6503206B2 (en) 2015-03-19 2019-04-17 東京応化工業株式会社 Resist pattern repair method
WO2016158507A1 (en) * 2015-03-31 2016-10-06 日産化学工業株式会社 Application liquid for resist pattern coating and pattern formation method
US10280357B2 (en) 2015-10-14 2019-05-07 CNPC USA Corp. High density and high temperature emulsifier for use in an oil based drilling fluid system
US9909050B2 (en) 2015-10-14 2018-03-06 Cnpc Usa Corporation High density and high temperature emulsifier for use in an oil based drilling fluid system
US9963630B2 (en) 2015-11-18 2018-05-08 Cnpc Usa Corporation Method for a fracturing fluid system at high temperatures
CN108351606A (en) * 2015-11-19 2018-07-31 Az电子材料（卢森堡）有限公司 It is used to form the composition of subtle corrosion-resisting pattern and the pattern forming method using the composition
JP2017165846A (en) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Fine pattern forming composition and fine pattern forming method using the same
KR101730838B1 (en) * 2016-05-04 2017-04-28 영창케미칼 주식회사 Process and composition for improving line width roughness of nega tone photoresist pattern
KR101819992B1 (en) * 2016-06-24 2018-01-18 영창케미칼 주식회사 The composition of shrinking photoresist pattern and methods for shrinking photoresist pattern

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729046A (en) * 1980-07-29 1982-02-16 Mitsubishi Paper Mills Ltd Processing method for lithographic plate
CA1266935A (en) * 1983-06-14 1990-03-20 Kiyoji Tanaka Resinous composition
DE3903001A1 (en) * 1989-02-02 1990-08-16 Hoechst Ag LIGHT-SENSITIVE MIXTURE AND LIGHT-SENSITIVE RECORDING MATERIAL MADE THEREOF
US5398092A (en) * 1992-07-08 1995-03-14 Mitsubishi Paper Mills Limited Method and apparatus for developing lithographic offset printing plate
DE19533217A1 (en) * 1995-09-08 1997-03-13 Basf Ag Process for the preparation of polymers based on basic vinyl monomers
JP3071401B2 (en) 1996-07-05 2000-07-31 三菱電機株式会社 Fine pattern forming material, method of manufacturing semiconductor device using the same, and semiconductor device
DE19732902A1 (en) * 1997-07-30 1999-02-04 Sun Chemical Corp A cover layer for photosensitive materials comprising a (1-vinylimidazole) polymer or copolymer
US6899994B2 (en) * 2001-04-04 2005-05-31 Kodak Polychrome Graphics Llc On-press developable IR sensitive printing plates using binder resins having polyethylene oxide segments
JP3662870B2 (en) 2001-07-05 2005-06-22 東京応化工業株式会社 Resin pattern refinement coating forming agent and fine resist pattern forming method using the same
JP3485183B1 (en) * 2002-06-28 2004-01-13 東京応化工業株式会社 Coating forming agent for pattern refinement and method for forming fine pattern using the same
US7282291B2 (en) * 2002-11-25 2007-10-16 California Institute Of Technology Water free proton conducting membranes based on poly-4-vinylpyridinebisulfate for fuel cells
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
JP4542991B2 (en) 2003-07-17 2010-09-15 Ａｚエレクトロニックマテリアルズ株式会社 Fine pattern forming material and fine pattern forming method using the same
JP4485241B2 (en) 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 Water-soluble resin composition and pattern forming method using the same
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4952012B2 (en) * 2005-03-29 2012-06-13 Ｊｓｒ株式会社 Resin composition for forming fine pattern and method for forming fine pattern
JP5000260B2 (en) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 Method for forming fine pattern and resist substrate processing liquid used therefor
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
WO2008140119A1 (en) * 2007-05-15 2008-11-20 Fujifilm Corporation Method for pattern formation
US7833683B2 (en) * 2007-08-14 2010-11-16 Xerox Corporation Photosensitive member having an overcoat
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5183449B2 (en) 2008-12-15 2013-04-17 富士フイルム株式会社 PATTERN FORMING METHOD USING NEGATIVE DEVELOPING RESIST COMPOSITION
JP5664509B2 (en) * 2011-09-16 2015-02-04 信越化学工業株式会社 Pattern formation method

Also Published As

Publication number Publication date
TW201324037A (en) 2013-06-16
KR101681524B1 (en) 2016-12-01
JP5758263B2 (en) 2015-08-05
CN103858058A (en) 2014-06-11
US20160327867A1 (en) 2016-11-10
WO2013054803A1 (en) 2013-04-18
US9448485B2 (en) 2016-09-20
JP2013083818A (en) 2013-05-09
US20150017587A1 (en) 2015-01-15
CN103858058B (en) 2018-03-13
TWI617880B (en) 2018-03-11
KR20140090189A (en) 2014-07-16

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