SG11201400460WA - Composition for forming fine resist pattern and pattern forming method using same - Google Patents

Composition for forming fine resist pattern and pattern forming method using same

Info

Publication number
SG11201400460WA
SG11201400460WA SG11201400460WA SG11201400460WA SG11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA
Authority
SG
Singapore
Prior art keywords
pattern
composition
same
forming
fine resist
Prior art date
Application number
SG11201400460WA
Inventor
Tetsuo Okayasu
Takashi Sekito
Masahiro Ishii
Original Assignee
Az Electronic Materials Ip Japan K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Ip Japan K K filed Critical Az Electronic Materials Ip Japan K K
Publication of SG11201400460WA publication Critical patent/SG11201400460WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/56—Acrylamide; Methacrylamide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201400460WA 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same SG11201400460WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011224030A JP5758263B2 (en) 2011-10-11 2011-10-11 Composition for forming fine resist pattern and pattern forming method using the same
PCT/JP2012/076167 WO2013054803A1 (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same

Publications (1)

Publication Number Publication Date
SG11201400460WA true SG11201400460WA (en) 2014-05-29

Family

ID=48081858

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400460WA SG11201400460WA (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same

Country Status (7)

Country Link
US (2) US9448485B2 (en)
JP (1) JP5758263B2 (en)
KR (1) KR101681524B1 (en)
CN (1) CN103858058B (en)
SG (1) SG11201400460WA (en)
TW (1) TWI617880B (en)
WO (1) WO2013054803A1 (en)

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JP6134619B2 (en) * 2013-09-13 2017-05-24 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method
JP6340304B2 (en) * 2013-11-29 2018-06-06 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method
JP6286227B2 (en) * 2014-02-21 2018-02-28 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
JP6531397B2 (en) 2014-03-07 2019-06-19 Jsr株式会社 Pattern forming method and composition used therefor
US9529265B2 (en) * 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
JP6459759B2 (en) * 2014-05-26 2019-01-30 信越化学工業株式会社 Pattern forming method and shrink agent
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
JP6456967B2 (en) * 2014-09-02 2019-01-23 富士フイルム株式会社 PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, RESIST COMPOSITION, AND RESIST FILM
US9696625B2 (en) 2014-10-17 2017-07-04 Tokyo Ohka Kogyo Co., Ltd. Method of forming resist pattern
JP6503206B2 (en) 2015-03-19 2019-04-17 東京応化工業株式会社 Resist pattern repair method
JP6642809B2 (en) * 2015-03-31 2020-02-12 日産化学株式会社 Coating solution for resist pattern coating and pattern forming method
US10280357B2 (en) 2015-10-14 2019-05-07 CNPC USA Corp. High density and high temperature emulsifier for use in an oil based drilling fluid system
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US10656522B2 (en) 2015-11-19 2020-05-19 Az Electronic Materials (Luxembourg) S.A.R.L. Composition for forming fine resist pattern and pattern forming method using same
JP2017165846A (en) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Fine pattern forming composition and fine pattern forming method using the same
KR101730838B1 (en) * 2016-05-04 2017-04-28 영창케미칼 주식회사 Process and composition for improving line width roughness of nega tone photoresist pattern
KR101819992B1 (en) 2016-06-24 2018-01-18 영창케미칼 주식회사 The composition of shrinking photoresist pattern and methods for shrinking photoresist pattern

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Also Published As

Publication number Publication date
US9448485B2 (en) 2016-09-20
WO2013054803A1 (en) 2013-04-18
US20160327867A1 (en) 2016-11-10
CN103858058B (en) 2018-03-13
US20150017587A1 (en) 2015-01-15
TWI617880B (en) 2018-03-11
JP2013083818A (en) 2013-05-09
KR20140090189A (en) 2014-07-16
CN103858058A (en) 2014-06-11
JP5758263B2 (en) 2015-08-05
TW201324037A (en) 2013-06-16
KR101681524B1 (en) 2016-12-01

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