SG11201501629VA - Composition for forming fine resist pattern and pattern formation method using same - Google Patents
Composition for forming fine resist pattern and pattern formation method using sameInfo
- Publication number
- SG11201501629VA SG11201501629VA SG11201501629VA SG11201501629VA SG11201501629VA SG 11201501629V A SG11201501629V A SG 11201501629VA SG 11201501629V A SG11201501629V A SG 11201501629VA SG 11201501629V A SG11201501629V A SG 11201501629VA SG 11201501629V A SG11201501629V A SG 11201501629VA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- same
- formation method
- forming fine
- pattern
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
- C09D129/02—Homopolymers or copolymers of unsaturated alcohols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D137/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Emergency Medicine (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012219657A JP6075724B2 (en) | 2012-10-01 | 2012-10-01 | Composition for forming fine resist pattern and pattern forming method using the same |
PCT/JP2013/076635 WO2014054606A1 (en) | 2012-10-01 | 2013-10-01 | Composition for forming fine resist pattern and pattern formation method using same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201501629VA true SG11201501629VA (en) | 2015-04-29 |
Family
ID=50434932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201501629VA SG11201501629VA (en) | 2012-10-01 | 2013-10-01 | Composition for forming fine resist pattern and pattern formation method using same |
Country Status (8)
Country | Link |
---|---|
US (1) | US9360756B2 (en) |
EP (1) | EP2905657A4 (en) |
JP (1) | JP6075724B2 (en) |
KR (1) | KR101738376B1 (en) |
CN (1) | CN104737077B (en) |
SG (1) | SG11201501629VA (en) |
TW (1) | TWI564663B (en) |
WO (1) | WO2014054606A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6346539B2 (en) * | 2014-09-29 | 2018-06-20 | 住友化学株式会社 | Resin, resist composition and method for producing resist pattern |
JP6347197B2 (en) * | 2014-10-02 | 2018-06-27 | Jsr株式会社 | Resist pattern refinement composition and pattern formation method |
TWI682250B (en) * | 2014-10-17 | 2020-01-11 | 日商東京應化工業股份有限公司 | Method of forming resist pattern |
JP6455369B2 (en) * | 2014-10-30 | 2019-01-23 | 信越化学工業株式会社 | Pattern forming method and shrink agent |
JP6455370B2 (en) * | 2014-10-30 | 2019-01-23 | 信越化学工業株式会社 | Pattern forming method and shrink agent |
EP3032332B1 (en) * | 2014-12-08 | 2017-04-05 | Shin-Etsu Chemical Co., Ltd. | Shrink material and pattern forming process |
JP6503206B2 (en) | 2015-03-19 | 2019-04-17 | 東京応化工業株式会社 | Resist pattern repair method |
JP6406105B2 (en) * | 2015-03-31 | 2018-10-17 | Jsr株式会社 | Pattern forming method and resist pattern miniaturization composition |
US10613435B2 (en) | 2015-03-31 | 2020-04-07 | Nissan Chemical Industries, Ltd. | Coating solution for resist pattern coating and method for forming pattern |
JP2020132749A (en) | 2019-02-19 | 2020-08-31 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Polymer, semiconductor composition comprising polymer, and method for producing film using semiconductor composition |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5002008A (en) | 1988-05-27 | 1991-03-26 | Tokyo Electron Limited | Coating apparatus and method for applying a liquid to a semiconductor wafer, including selecting a nozzle in a stand-by state |
JP2815064B2 (en) * | 1988-05-27 | 1998-10-27 | 東京エレクトロン 株式会社 | Coating apparatus and method for applying liquid to semiconductor wafer |
JP3071401B2 (en) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | Fine pattern forming material, method of manufacturing semiconductor device using the same, and semiconductor device |
TW372337B (en) | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
JP3662870B2 (en) | 2001-07-05 | 2005-06-22 | 東京応化工業株式会社 | Resin pattern refinement coating forming agent and fine resist pattern forming method using the same |
US7189783B2 (en) * | 2001-11-27 | 2007-03-13 | Fujitsu Limited | Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
WO2003065124A1 (en) * | 2002-01-25 | 2003-08-07 | Jsr Corporation | Two-layer film and method of forming pattern with the same |
JP4485241B2 (en) | 2004-04-09 | 2010-06-16 | Azエレクトロニックマテリアルズ株式会社 | Water-soluble resin composition and pattern forming method using the same |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4657899B2 (en) * | 2005-11-30 | 2011-03-23 | 富士通株式会社 | Resist pattern thickening material, resist pattern forming method, semiconductor device and manufacturing method thereof |
JP4724073B2 (en) * | 2006-08-17 | 2011-07-13 | 富士通株式会社 | Resist pattern forming method, semiconductor device and manufacturing method thereof |
JP5018307B2 (en) * | 2006-09-26 | 2012-09-05 | 富士通株式会社 | Resist pattern thickening material, resist pattern forming method, semiconductor device and manufacturing method thereof |
US8476001B2 (en) * | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
JP4558064B2 (en) * | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | Pattern formation method |
JP4973876B2 (en) * | 2007-08-22 | 2012-07-11 | 信越化学工業株式会社 | Pattern forming method and pattern surface coating material used therefor |
JP5058733B2 (en) * | 2007-09-12 | 2012-10-24 | AzエレクトロニックマテリアルズIp株式会社 | Method for forming fine pattern using silicon-containing composition for forming fine pattern |
JP2009265505A (en) * | 2008-04-28 | 2009-11-12 | Jsr Corp | Pattern formation method and resin composition for fine pattern formation |
JP5845556B2 (en) * | 2008-07-24 | 2016-01-20 | Jsr株式会社 | Resist pattern refinement composition and resist pattern forming method |
JP5375412B2 (en) * | 2009-07-30 | 2013-12-25 | Jsr株式会社 | Resin composition for forming fine pattern and method for forming fine pattern |
JP2011257499A (en) * | 2010-06-07 | 2011-12-22 | Tokyo Ohka Kogyo Co Ltd | Resist pattern forming method and pattern fining agent |
JP5664509B2 (en) * | 2011-09-16 | 2015-02-04 | 信越化学工業株式会社 | Pattern formation method |
US8703395B2 (en) * | 2011-10-28 | 2014-04-22 | Jsr Corporation | Pattern-forming method |
JP2013117710A (en) * | 2011-10-31 | 2013-06-13 | Tokyo Ohka Kogyo Co Ltd | Method for forming fine pattern, and coating forming agent for pattern fining |
KR20130048166A (en) | 2011-10-31 | 2013-05-09 | 도오꾜오까고오교 가부시끼가이샤 | Method for forming fine pattern, and coating forming agent for pattern fining |
JP5793399B2 (en) * | 2011-11-04 | 2015-10-14 | 富士フイルム株式会社 | Pattern forming method and composition for forming a crosslinked layer used in the method |
JP5916391B2 (en) | 2012-01-13 | 2016-05-11 | 東京応化工業株式会社 | Fine pattern forming method and coating for pattern miniaturization |
-
2012
- 2012-10-01 JP JP2012219657A patent/JP6075724B2/en active Active
-
2013
- 2013-10-01 SG SG11201501629VA patent/SG11201501629VA/en unknown
- 2013-10-01 CN CN201380051105.3A patent/CN104737077B/en not_active Expired - Fee Related
- 2013-10-01 WO PCT/JP2013/076635 patent/WO2014054606A1/en active Application Filing
- 2013-10-01 TW TW102135507A patent/TWI564663B/en not_active IP Right Cessation
- 2013-10-01 KR KR1020157011192A patent/KR101738376B1/en active IP Right Grant
- 2013-10-01 US US14/431,512 patent/US9360756B2/en not_active Expired - Fee Related
- 2013-10-01 EP EP13844490.6A patent/EP2905657A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR101738376B1 (en) | 2017-05-22 |
CN104737077A (en) | 2015-06-24 |
WO2014054606A1 (en) | 2014-04-10 |
TWI564663B (en) | 2017-01-01 |
EP2905657A4 (en) | 2016-06-01 |
JP2014071424A (en) | 2014-04-21 |
JP6075724B2 (en) | 2017-02-08 |
US9360756B2 (en) | 2016-06-07 |
CN104737077B (en) | 2019-06-04 |
US20150253669A1 (en) | 2015-09-10 |
TW201421160A (en) | 2014-06-01 |
KR20150064150A (en) | 2015-06-10 |
EP2905657A1 (en) | 2015-08-12 |
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