DE69324942T2 - Strahlungsempfindliche Zusammensetzungen und Verfahren - Google Patents
Strahlungsempfindliche Zusammensetzungen und VerfahrenInfo
- Publication number
- DE69324942T2 DE69324942T2 DE69324942T DE69324942T DE69324942T2 DE 69324942 T2 DE69324942 T2 DE 69324942T2 DE 69324942 T DE69324942 T DE 69324942T DE 69324942 T DE69324942 T DE 69324942T DE 69324942 T2 DE69324942 T2 DE 69324942T2
- Authority
- DE
- Germany
- Prior art keywords
- methods
- radiation sensitive
- sensitive compositions
- compositions
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83678992A | 1992-02-14 | 1992-02-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69324942D1 DE69324942D1 (de) | 1999-06-24 |
DE69324942T2 true DE69324942T2 (de) | 1999-10-07 |
Family
ID=25272739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69324942T Expired - Fee Related DE69324942T2 (de) | 1992-02-14 | 1993-02-03 | Strahlungsempfindliche Zusammensetzungen und Verfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5627010A (de) |
EP (1) | EP0555749B1 (de) |
JP (1) | JPH0641493A (de) |
DE (1) | DE69324942T2 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69408709T2 (de) | 1993-04-28 | 1998-10-01 | Hitachi Chemical Co Ltd | Photoempfindliche Harzzusammensetzung |
JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
DE69631709T2 (de) * | 1995-03-16 | 2005-02-10 | Shipley Co., L.L.C., Marlborough | Strahlungsempfindliche Zusammensetzung, die ein Polymer mit Schutzgruppen enthält |
JP3628098B2 (ja) * | 1996-03-29 | 2005-03-09 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法 |
JPH09268228A (ja) * | 1996-04-01 | 1997-10-14 | Dow Corning Asia Ltd | 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法 |
JPH1041633A (ja) | 1996-07-25 | 1998-02-13 | Hitachi Ltd | 多層配線板とそれに用いる感光性樹脂組成物 |
TW546540B (en) | 1997-04-30 | 2003-08-11 | Wako Pure Chem Ind Ltd | An agent for reducing the substrate dependence of resist and a resist composition |
TW436491B (en) * | 1997-08-22 | 2001-05-28 | Ciba Sc Holding Ag | Compositions for use in base-catalysed reactions, a process for curing said compostions and a process for photochemically generating bases in base catalysed polymeriaztion reactions |
GB9727186D0 (en) * | 1997-12-24 | 1998-02-25 | Du Pont Uk | Photoactive materials applicable to imaging systems |
US6103447A (en) * | 1998-02-25 | 2000-08-15 | International Business Machines Corp. | Approach to formulating irradiation sensitive positive resists |
JP3125748B2 (ja) * | 1998-05-27 | 2001-01-22 | 富士ゼロックス株式会社 | 画像記録方法 |
JP3739227B2 (ja) * | 1999-03-04 | 2006-01-25 | 信越化学工業株式会社 | フォトレジスト材料およびパターン形成方法 |
US6323287B1 (en) * | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
US6338934B1 (en) | 1999-08-26 | 2002-01-15 | International Business Machines Corporation | Hybrid resist based on photo acid/photo base blending |
AUPQ700100A0 (en) * | 2000-04-18 | 2000-05-11 | Orbital Engine Company (Australia) Proprietary Limited | Engine speed control for internal combustion engines |
BR0111020B1 (pt) * | 2000-05-26 | 2011-02-22 | composição de revestimento fotoativável, processo para produção de uma camada de revestimento, e, uso de uma composição de revestimento. | |
AU8015701A (en) * | 2000-08-29 | 2002-03-13 | Jsr Corp | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern |
KR100789583B1 (ko) * | 2000-12-11 | 2007-12-28 | 제이에스알 가부시끼가이샤 | 감방사선성 굴절율 변화성 조성물 및 굴절율 변화법 |
KR100566792B1 (ko) * | 2000-12-27 | 2006-04-03 | 히다치 가세고교 가부시끼가이샤 | 광염기발생제 및 이것을 이용한 경화성 조성물 및 경화방법 |
EP1369459A4 (de) | 2001-02-19 | 2008-05-21 | Jsr Corp | Strahlungsempfindliche zusammensetzung mit brechungsindexverteilung |
CA2408217A1 (en) | 2001-03-13 | 2002-11-12 | Jsr Corporation | Radiation sensitive refractive index changing composition and use thereof |
JP2003043682A (ja) * | 2001-08-01 | 2003-02-13 | Jsr Corp | 感放射線性誘電率変化性組成物、誘電率変化法 |
JP2003185820A (ja) * | 2001-12-21 | 2003-07-03 | Jsr Corp | 感放射線性屈折率変化性組成物および屈折率変化法 |
TWI273352B (en) * | 2002-01-24 | 2007-02-11 | Jsr Corp | Radiation sensitive composition for forming an insulating film, insulating film and display device |
JPWO2004025342A1 (ja) * | 2002-09-11 | 2006-01-12 | 富士通株式会社 | デバイス製造方法 |
JP4217886B2 (ja) * | 2003-06-25 | 2009-02-04 | Jsr株式会社 | 感放射線性屈折率変化性組成物、パターン形成法および光学材料 |
US7524606B2 (en) * | 2005-04-11 | 2009-04-28 | Az Electronic Materials Usa Corp. | Nanocomposite photoresist composition for imaging thick films |
US7247419B2 (en) * | 2005-04-11 | 2007-07-24 | Az Electronic Materials Usa Corp. | Nanocomposite photosensitive composition and use thereof |
US20060257785A1 (en) * | 2005-05-13 | 2006-11-16 | Johnson Donald W | Method of forming a photoresist element |
US7635552B2 (en) * | 2006-07-25 | 2009-12-22 | Endicott Interconnect Technologies, Inc. | Photoresist composition with antibacterial agent |
US20100009290A1 (en) * | 2006-12-03 | 2010-01-14 | Central Glass Co., Ltd. | Photosensitive Polybenzoxazines and Methods of Making the Same |
WO2008069813A1 (en) * | 2006-12-04 | 2008-06-12 | Central Glass Co., Ltd. | Photosensitive polyimides and methods of making the same |
US20090186293A1 (en) * | 2008-01-23 | 2009-07-23 | Bryan Thomas Fannin | Dry film protoresist for a micro-fluid ejection head and method therefor |
US8686059B2 (en) | 2009-06-17 | 2014-04-01 | Three Bond Co., Ltd. | Base and radical generator, composition using same and method for curing same |
US8216767B2 (en) | 2009-09-08 | 2012-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process and chemical amplified photoresist with a photodegradable base |
US8956806B2 (en) * | 2009-09-18 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and patterning process |
US8512939B2 (en) | 2009-09-25 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist stripping technique |
JP5898985B2 (ja) | 2011-05-11 | 2016-04-06 | 東京応化工業株式会社 | レジストパターン形成方法 |
US8968990B2 (en) | 2011-09-15 | 2015-03-03 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming resist pattern |
KR101936435B1 (ko) | 2011-09-22 | 2019-01-08 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물, 레지스트 패턴 형성 방법 |
TWI575319B (zh) | 2011-09-22 | 2017-03-21 | 東京應化工業股份有限公司 | 光阻組成物及光阻圖型之形成方法 |
JP5816505B2 (ja) * | 2011-09-27 | 2015-11-18 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP5933364B2 (ja) | 2011-11-09 | 2016-06-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
EP2792694A4 (de) | 2011-12-16 | 2015-07-15 | Three Bond Fine Chemical Co Ltd | Härtbare harzzusammensetzung |
JP5820719B2 (ja) | 2011-12-21 | 2015-11-24 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP5898962B2 (ja) | 2012-01-11 | 2016-04-06 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
KR102050619B1 (ko) * | 2012-05-17 | 2019-11-29 | 다이요 잉키 세이조 가부시키가이샤 | 액상 현상형의 말레이미드 조성물, 프린트 배선판 |
JP6105858B2 (ja) * | 2012-05-17 | 2017-03-29 | 太陽インキ製造株式会社 | パターン形成方法、アルカリ現像型の熱硬化性樹脂組成物、及びプリント配線板 |
WO2013172432A1 (ja) * | 2012-05-17 | 2013-11-21 | 太陽インキ製造株式会社 | アルカリ現像型の熱硬化性樹脂組成物、プリント配線板 |
WO2013172433A1 (ja) * | 2012-05-17 | 2013-11-21 | 太陽インキ製造株式会社 | アルカリ現像型の熱硬化性樹脂組成物、プリント配線板 |
WO2013171888A1 (ja) * | 2012-05-17 | 2013-11-21 | 太陽インキ製造株式会社 | アルカリ現像型の熱硬化性樹脂組成物、プリント配線板 |
JP6265374B2 (ja) * | 2012-11-15 | 2018-01-24 | 学校法人東京理科大学 | 塩基増殖剤及び当該塩基増殖剤を含有する塩基反応性樹脂組成物 |
JP6605821B2 (ja) * | 2014-03-14 | 2019-11-13 | 株式会社Adeka | 感光性樹脂組成物 |
JP6363861B2 (ja) * | 2014-03-31 | 2018-07-25 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、そのドライフィルムおよび硬化物、並びにそれらを用いて形成された硬化被膜を有するプリント配線板 |
US10197913B2 (en) | 2014-10-01 | 2019-02-05 | Tokyo University Of Science Foundation | Photosensitive resin composition and cured product thereof |
US10662274B2 (en) | 2016-12-02 | 2020-05-26 | Georgia Tech Research Corporation | Self-immolative polymers, articles thereof, and methods of making and using same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3297440A (en) * | 1963-05-02 | 1967-01-10 | Gevaert Photo Prod Nv | Photopolymerization of ethylenically unsaturated organic compositions and the formation of a relief image |
US4035189A (en) * | 1972-02-25 | 1977-07-12 | Hitachi Chemical Company, Ltd. | Image forming curable resin compositions |
JPS515935B2 (de) * | 1972-04-17 | 1976-02-24 | ||
GB1431175A (en) * | 1972-06-30 | 1976-04-07 | Agfa Gevaert | Photographic material and process in which photosensitive amine progenitors are used |
AU3870478A (en) * | 1977-08-09 | 1980-02-14 | Somar Mfg | High energy radiation cruable resist material |
FR2495343B1 (fr) * | 1980-12-02 | 1987-02-20 | Regma | Materiaux diazotypes thermodeveloppables contenant un precurseur d'activateur liberant lors du chauffage une base forte. procede de diazotypie mettant en oeuvre ces materiaux |
JPS61223020A (ja) * | 1985-03-29 | 1986-10-03 | Toshiba Corp | 光硬化性エポキシ樹脂系組成物 |
JPS62131255A (ja) * | 1985-12-03 | 1987-06-13 | Fuji Photo Film Co Ltd | 画像形成方法 |
CH678897A5 (de) * | 1986-05-10 | 1991-11-15 | Ciba Geigy Ag | |
US4950581A (en) * | 1987-07-06 | 1990-08-21 | Fuji Photo Film Co., Ltd. | Photopolymerizable composition |
JPH0268A (ja) * | 1987-11-13 | 1990-01-05 | Toshiba Corp | ソルダ−レジスト組成物 |
DE3815050A1 (de) * | 1988-05-04 | 1989-11-16 | Basf Ag | Neues polyphenol und daraus hergestellte duromere |
EP0413087A1 (de) * | 1989-07-20 | 1991-02-20 | International Business Machines Corporation | Lichtempfindliche Zusammensetzung und ihre Verwendung |
US5650261A (en) * | 1989-10-27 | 1997-07-22 | Rohm And Haas Company | Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system |
-
1993
- 1993-02-03 EP EP93101634A patent/EP0555749B1/de not_active Expired - Lifetime
- 1993-02-03 DE DE69324942T patent/DE69324942T2/de not_active Expired - Fee Related
- 1993-02-12 JP JP5047462A patent/JPH0641493A/ja active Pending
-
1994
- 1994-04-15 US US08/228,187 patent/US5627010A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5627010A (en) | 1997-05-06 |
DE69324942D1 (de) | 1999-06-24 |
EP0555749B1 (de) | 1999-05-19 |
JPH0641493A (ja) | 1994-02-15 |
EP0555749A1 (de) | 1993-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |