TWI541888B - 用於在基板中形成孔的裝置及方法 - Google Patents

用於在基板中形成孔的裝置及方法 Download PDF

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Publication number
TWI541888B
TWI541888B TW101100426A TW101100426A TWI541888B TW I541888 B TWI541888 B TW I541888B TW 101100426 A TW101100426 A TW 101100426A TW 101100426 A TW101100426 A TW 101100426A TW I541888 B TWI541888 B TW I541888B
Authority
TW
Taiwan
Prior art keywords
substrate
etchant
etching
hole
etch
Prior art date
Application number
TW101100426A
Other languages
English (en)
Chinese (zh)
Other versions
TW201230185A (en
Inventor
安迪Ｅ 虎柏
Original Assignee
伊雷克托科學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 伊雷克托科學工業股份有限公司 filed Critical 伊雷克托科學工業股份有限公司
Publication of TW201230185A publication Critical patent/TW201230185A/zh
Application granted granted Critical
Publication of TWI541888B publication Critical patent/TWI541888B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
TW101100426A 2011-01-05 2012-01-05 用於在基板中形成孔的裝置及方法 TWI541888B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate

Publications (2)

Publication Number Publication Date
TW201230185A TW201230185A (en) 2012-07-16
TWI541888B true TWI541888B (zh) 2016-07-11

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101100426A TWI541888B (zh) 2011-01-05 2012-01-05 用於在基板中形成孔的裝置及方法

Country Status (6)

Country Link
US (1) US20120168412A1 (enExample)
JP (1) JP5868424B2 (enExample)
KR (1) KR20130132882A (enExample)
CN (1) CN103348450B (enExample)
TW (1) TWI541888B (enExample)
WO (1) WO2012094490A2 (enExample)

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US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
CN104114506B (zh) * 2012-02-29 2017-05-24 伊雷克托科学工业股份有限公司 加工强化玻璃的方法和装置及藉此制造的物品
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
US10696932B2 (en) 2015-08-03 2020-06-30 Fujifilm Electronic Materials U.S.A., Inc. Cleaning composition
CN117434627A (zh) * 2015-08-26 2024-01-23 新加坡国立大学 用于保持微球体的膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
KR102562171B1 (ko) 2016-12-22 2023-07-31 매직 립, 인코포레이티드 레이저 삭마를 사용하여 형상화된 섬유 엘리먼트들의 제조를 위한 방법들 및 시스템들
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
WO2020061437A1 (en) 2018-09-20 2020-03-26 Industrial Technology Research Institute Copper metallization for through-glass vias on thin glass
KR20250083587A (ko) 2019-02-21 2025-06-10 코닝 인코포레이티드 구리-금속화된 쓰루 홀을 갖는 유리 또는 유리 세라믹 물품 및 이를 제조하기 위한 공정
US12680165B2 (en) * 2020-04-03 2026-07-14 Applied Materials Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114256141A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 一种孔处理方法和半导体器件
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US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
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Also Published As

Publication number Publication date
JP2014502061A (ja) 2014-01-23
JP5868424B2 (ja) 2016-02-24
CN103348450B (zh) 2016-08-10
US20120168412A1 (en) 2012-07-05
WO2012094490A3 (en) 2012-09-27
TW201230185A (en) 2012-07-16
CN103348450A (zh) 2013-10-09
KR20130132882A (ko) 2013-12-05
WO2012094490A2 (en) 2012-07-12

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