CN103348450B - 用于在衬底中形成孔径的装置和方法 - Google Patents

用于在衬底中形成孔径的装置和方法 Download PDF

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Publication number
CN103348450B
CN103348450B CN201280004581.5A CN201280004581A CN103348450B CN 103348450 B CN103348450 B CN 103348450B CN 201280004581 A CN201280004581 A CN 201280004581A CN 103348450 B CN103348450 B CN 103348450B
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CN
China
Prior art keywords
substrate
aperture
etchant
laser
etch process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280004581.5A
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English (en)
Chinese (zh)
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CN103348450A (zh
Inventor
安迪·E·虎柏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
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Electro Scientific Industries Inc
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Publication date
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Publication of CN103348450A publication Critical patent/CN103348450A/zh
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Publication of CN103348450B publication Critical patent/CN103348450B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
CN201280004581.5A 2011-01-05 2012-01-05 用于在衬底中形成孔径的装置和方法 Expired - Fee Related CN103348450B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US61/430,045 2011-01-05
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate
US13/343,640 2012-01-04
PCT/US2012/020324 WO2012094490A2 (en) 2011-01-05 2012-01-05 Apparatus and method for forming an aperture in a substrate

Publications (2)

Publication Number Publication Date
CN103348450A CN103348450A (zh) 2013-10-09
CN103348450B true CN103348450B (zh) 2016-08-10

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280004581.5A Expired - Fee Related CN103348450B (zh) 2011-01-05 2012-01-05 用于在衬底中形成孔径的装置和方法

Country Status (6)

Country Link
US (1) US20120168412A1 (enExample)
JP (1) JP5868424B2 (enExample)
KR (1) KR20130132882A (enExample)
CN (1) CN103348450B (enExample)
TW (1) TWI541888B (enExample)
WO (1) WO2012094490A2 (enExample)

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KR20140138134A (ko) 2012-02-28 2014-12-03 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 강화 유리를 분리하는 방법과 장치 및 이에 의해 제조된 물품
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
US9227868B2 (en) * 2012-02-29 2016-01-05 Electro Scientific Industries, Inc. Method and apparatus for machining strengthened glass and articles produced thereby
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
KR102637508B1 (ko) 2015-08-03 2024-02-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 세정 조성물
CN117434627A (zh) * 2015-08-26 2024-01-23 新加坡国立大学 用于保持微球体的膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
US10723653B2 (en) 2016-12-22 2020-07-28 Magic Leap, Inc. Methods and systems for fabrication of shaped fiber elements using laser ablation
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
JP2022502567A (ja) 2018-09-20 2022-01-11 財團法人工業技術研究院Industrial Technology Research Institute 薄いガラスのガラス貫通ビアのための銅による金属化
KR20250083587A (ko) 2019-02-21 2025-06-10 코닝 인코포레이티드 구리-금속화된 쓰루 홀을 갖는 유리 또는 유리 세라믹 물품 및 이를 제조하기 위한 공정
US20210310122A1 (en) * 2020-04-03 2021-10-07 Applied Materials, Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US12030135B2 (en) 2020-10-14 2024-07-09 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling
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CN1461495A (zh) * 2001-04-18 2003-12-10 索尼公司 布线方法和利用该方法的器件布置方法、以及图象显示装置的制造方法
US6820330B1 (en) * 1996-12-13 2004-11-23 Tessera, Inc. Method for forming a multi-layer circuit assembly
US20060046463A1 (en) * 2004-08-24 2006-03-02 Watkins Charles M Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
US20060046468A1 (en) * 2004-08-31 2006-03-02 Salman Akram Through-substrate interconnect fabrication methods and resulting structures and assemblies
US20070001168A1 (en) * 2004-08-27 2007-01-04 Kirby Kyle K Semiconductor components and assemblies including vias of varying lateral dimensions
CN101752238A (zh) * 2008-12-08 2010-06-23 台湾积体电路制造股份有限公司 半导体元件的形成方法

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CN1461495A (zh) * 2001-04-18 2003-12-10 索尼公司 布线方法和利用该方法的器件布置方法、以及图象显示装置的制造方法
US20060046463A1 (en) * 2004-08-24 2006-03-02 Watkins Charles M Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
US20070001168A1 (en) * 2004-08-27 2007-01-04 Kirby Kyle K Semiconductor components and assemblies including vias of varying lateral dimensions
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Also Published As

Publication number Publication date
CN103348450A (zh) 2013-10-09
US20120168412A1 (en) 2012-07-05
TW201230185A (en) 2012-07-16
JP5868424B2 (ja) 2016-02-24
WO2012094490A2 (en) 2012-07-12
WO2012094490A3 (en) 2012-09-27
JP2014502061A (ja) 2014-01-23
KR20130132882A (ko) 2013-12-05
TWI541888B (zh) 2016-07-11

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