JP2014502061A - 基板に開口を形成する装置及び方法 - Google Patents
基板に開口を形成する装置及び方法 Download PDFInfo
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
- B23K2101/35—Surface treated articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Abstract
【選択図】図2
Description
Claims (20)
- 基板内に開口を形成する方法であって、
第1の面と、該第1の面と反対側の第2の面とを有する基板を用意し、
前記基板にレーザビームを照射して前記基板内に側壁を有するレーザ加工特徴部を形成し、
前記基板の前記第1の面及び前記第2の面から前記レーザ加工特徴部にエッチャントを導入し、前記側壁を前記エッチャントでエッチングして前記レーザ加工特徴部の少なくとも1つの特性を変化させる、
方法。 - 前記エッチャントはドライエッチャントを含む、請求項1の方法。
- 前記ドライエッチャントは、フルオロカーボン化合物、酸素化合物、塩素化合物、又は四塩化ホウ素化合物のいずれかである、請求項2の方法。
- 前記ドライエッチャントは、二フッ化キセノンを含む、請求項3のシステム。
- 前記エッチングの際に、
前記エッチャントを前記基板の前記第1の面から前記レーザ加工特徴部に導入する第1のエッチプロセスを行い、
前記エッチャントを前記基板の前記第2の面から前記レーザ加工特徴部に導入する第2のエッチプロセスを行う、
請求項1の方法。 - 前記エッチングの際に、前記第1のエッチプロセスの少なくとも一部と前記第2のエッチプロセスの少なくとも一部を同時に行う、請求項5の方法。
- 前記エッチングの際に、前記第1のエッチプロセスの少なくとも一部と前記第2のエッチプロセスの少なくとも一部を異なる時点で行う、請求項5の方法。
- 前記エッチングの際に、前記第1のエッチプロセスと前記第2のエッチプロセスとの間に前記基板を移動させる、請求項5の方法。
- 前記基板を移動させる際に、前記基板を裏返す、請求項8の方法。
- 前記少なくとも1つの特性は前記側壁の表面粗さである、請求項1の方法。
- 前記少なくとも1つの特性は前記レーザ加工特徴部のテーパである、請求項1の方法。
- 前記少なくとも1つの特性は前記レーザ加工特徴部の断面プロファイルである、請求項1の方法。
- 前記少なくとも1つの特性は前記レーザ加工特徴部のアスペクト比である、請求項1の方法。
- 前記基板は半導体基板である、請求項1の方法。
- 第1の面と第2の面とを有する基板内に開口を形成するためのシステムであって、
前記基板にレーザビームを照射して前記基板内にレーザ加工特徴部を形成するレーザと、
前記基板を収容するように構成されたエッチチャンバを有するエッチ加工システムであって、前記基板の前記第1の面及び前記第2の面から前記レーザ加工特徴部に、前記レーザ加工特徴部に隣接する基板の少なくとも一部を除去するように構成されたエッチャントを導入するように構成されたエッチ加工システムと、
を備えたシステム。 - 前記エッチャントはドライエッチャントを含む、請求項15のシステム。
- 前記エッチ加工システムは、
前記エッチャントを前記基板の前記第1の面から前記レーザ加工特徴部に導入する第1のエッチプロセスを行い、
前記エッチャントを前記基板の前記第2の面から前記レーザ加工特徴部に導入する第2のエッチプロセスを行う
ように構成されている、請求項15のシステム。 - 前記エッチ加工システムは、さらに、前記第1のエッチプロセスの少なくとも一部と前記第2のエッチプロセスの少なくとも一部を同時に行うように構成される、請求項17のシステム。
- 前記エッチ加工システムは、さらに、前記第1のエッチプロセスの少なくとも一部と前記第2のエッチプロセスの少なくとも一部を異なる時点で行うように構成される、請求項17のシステム。
- 前記エッチ加工システムは、前記第1のエッチプロセスと前記第2のエッチプロセスとの間に前記基板を前記エッチチャンバ内で裏返すように構成される、請求項17のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161430045P | 2011-01-05 | 2011-01-05 | |
US61/430,045 | 2011-01-05 | ||
US13/343,640 US20120168412A1 (en) | 2011-01-05 | 2012-01-04 | Apparatus and method for forming an aperture in a substrate |
US13/343,640 | 2012-01-04 | ||
PCT/US2012/020324 WO2012094490A2 (en) | 2011-01-05 | 2012-01-05 | Apparatus and method for forming an aperture in a substrate |
Publications (3)
Publication Number | Publication Date |
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JP2014502061A true JP2014502061A (ja) | 2014-01-23 |
JP2014502061A5 JP2014502061A5 (ja) | 2015-02-12 |
JP5868424B2 JP5868424B2 (ja) | 2016-02-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013548538A Expired - Fee Related JP5868424B2 (ja) | 2011-01-05 | 2012-01-05 | 基板に開口を形成する装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120168412A1 (ja) |
JP (1) | JP5868424B2 (ja) |
KR (1) | KR20130132882A (ja) |
CN (1) | CN103348450B (ja) |
TW (1) | TWI541888B (ja) |
WO (1) | WO2012094490A2 (ja) |
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- 2012-01-04 US US13/343,640 patent/US20120168412A1/en not_active Abandoned
- 2012-01-05 KR KR1020137016689A patent/KR20130132882A/ko not_active Application Discontinuation
- 2012-01-05 WO PCT/US2012/020324 patent/WO2012094490A2/en active Application Filing
- 2012-01-05 TW TW101100426A patent/TWI541888B/zh not_active IP Right Cessation
- 2012-01-05 CN CN201280004581.5A patent/CN103348450B/zh not_active Expired - Fee Related
- 2012-01-05 JP JP2013548538A patent/JP5868424B2/ja not_active Expired - Fee Related
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US10292275B2 (en) | 2016-04-06 | 2019-05-14 | AGC Inc. | Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole |
Also Published As
Publication number | Publication date |
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CN103348450B (zh) | 2016-08-10 |
US20120168412A1 (en) | 2012-07-05 |
WO2012094490A2 (en) | 2012-07-12 |
JP5868424B2 (ja) | 2016-02-24 |
WO2012094490A3 (en) | 2012-09-27 |
CN103348450A (zh) | 2013-10-09 |
TWI541888B (zh) | 2016-07-11 |
KR20130132882A (ko) | 2013-12-05 |
TW201230185A (en) | 2012-07-16 |
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