KR20130132882A - 기판 내 개구 형성 장치 및 방법 - Google Patents

기판 내 개구 형성 장치 및 방법 Download PDF

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Publication number
KR20130132882A
KR20130132882A KR1020137016689A KR20137016689A KR20130132882A KR 20130132882 A KR20130132882 A KR 20130132882A KR 1020137016689 A KR1020137016689 A KR 1020137016689A KR 20137016689 A KR20137016689 A KR 20137016689A KR 20130132882 A KR20130132882 A KR 20130132882A
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KR
South Korea
Prior art keywords
substrate
laser
forming
etchant
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137016689A
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English (en)
Korean (ko)
Inventor
앤디 이. 후퍼
Original Assignee
일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
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Application filed by 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 filed Critical 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
Publication of KR20130132882A publication Critical patent/KR20130132882A/ko
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
KR1020137016689A 2011-01-05 2012-01-05 기판 내 개구 형성 장치 및 방법 Ceased KR20130132882A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US61/430,045 2011-01-05
US13/343,640 2012-01-04
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate
PCT/US2012/020324 WO2012094490A2 (en) 2011-01-05 2012-01-05 Apparatus and method for forming an aperture in a substrate

Publications (1)

Publication Number Publication Date
KR20130132882A true KR20130132882A (ko) 2013-12-05

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137016689A Ceased KR20130132882A (ko) 2011-01-05 2012-01-05 기판 내 개구 형성 장치 및 방법

Country Status (6)

Country Link
US (1) US20120168412A1 (enExample)
JP (1) JP5868424B2 (enExample)
KR (1) KR20130132882A (enExample)
CN (1) CN103348450B (enExample)
TW (1) TWI541888B (enExample)
WO (1) WO2012094490A2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716128B2 (en) * 2011-04-14 2014-05-06 Tsmc Solid State Lighting Ltd. Methods of forming through silicon via openings
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
CN104136967B (zh) 2012-02-28 2018-02-16 伊雷克托科学工业股份有限公司 用于分离增强玻璃的方法及装置及由该增强玻璃生产的物品
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
CN104114506B (zh) * 2012-02-29 2017-05-24 伊雷克托科学工业股份有限公司 加工强化玻璃的方法和装置及藉此制造的物品
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
CN108026491B (zh) 2015-08-03 2021-08-13 富士胶片电子材料美国有限公司 清洁组合物
JP2018532148A (ja) * 2015-08-26 2018-11-01 ナショナル ユニバーシティ オブ シンガポール 微小球を保持する膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
CN110099871B (zh) * 2016-12-22 2022-04-05 奇跃公司 用于使用激光烧蚀制造成形光纤元件的方法和系统
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
KR20210064266A (ko) 2018-09-20 2021-06-02 재단법인 공업기술연구원 얇은 유리 상의 유리-관통 비아를 위한 구리 금속화
CN113474311B (zh) 2019-02-21 2023-12-29 康宁股份有限公司 具有铜金属化贯穿孔的玻璃或玻璃陶瓷制品及其制造过程
US20210310122A1 (en) * 2020-04-03 2021-10-07 Applied Materials, Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US11819948B2 (en) 2020-10-14 2023-11-21 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling
US12030135B2 (en) 2020-10-14 2024-07-09 Applied Materials, Inc. Methods to fabricate chamber component holes using laser drilling

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03253025A (ja) * 1990-03-02 1991-11-12 Nippon Telegr & Teleph Corp <Ntt> 加工基板及びシリコン異方性エッチング方法
DE69133169D1 (de) * 1990-05-09 2003-01-16 Canon Kk Verfahren zur Erzeugung einer Struktur und Verfahren zum Vorbereiten einer halbleitenden Anordnung mit Hilfe dieses Verfahrens
US6820330B1 (en) * 1996-12-13 2004-11-23 Tessera, Inc. Method for forming a multi-layer circuit assembly
JP3957010B2 (ja) * 1997-06-04 2007-08-08 日本板硝子株式会社 微細孔を有するガラス基材
US6114240A (en) * 1997-12-18 2000-09-05 Micron Technology, Inc. Method for fabricating semiconductor components using focused laser beam
JP2000246474A (ja) * 1999-02-25 2000-09-12 Seiko Epson Corp レーザ光による加工方法
AU2692100A (en) * 1999-02-25 2000-09-14 Seiko Epson Corporation Method for machining work by laser beam
JP2002313914A (ja) * 2001-04-18 2002-10-25 Sony Corp 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7598167B2 (en) * 2004-08-24 2009-10-06 Micron Technology, Inc. Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
US7378342B2 (en) * 2004-08-27 2008-05-27 Micron Technology, Inc. Methods for forming vias varying lateral dimensions
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
JP4840200B2 (ja) * 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7989318B2 (en) * 2008-12-08 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stacking semiconductor dies
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system

Also Published As

Publication number Publication date
CN103348450A (zh) 2013-10-09
US20120168412A1 (en) 2012-07-05
TW201230185A (en) 2012-07-16
WO2012094490A3 (en) 2012-09-27
JP2014502061A (ja) 2014-01-23
JP5868424B2 (ja) 2016-02-24
WO2012094490A2 (en) 2012-07-12
TWI541888B (zh) 2016-07-11
CN103348450B (zh) 2016-08-10

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