JP5868424B2 - 基板に開口を形成する装置及び方法 - Google Patents

基板に開口を形成する装置及び方法 Download PDF

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Publication number
JP5868424B2
JP5868424B2 JP2013548538A JP2013548538A JP5868424B2 JP 5868424 B2 JP5868424 B2 JP 5868424B2 JP 2013548538 A JP2013548538 A JP 2013548538A JP 2013548538 A JP2013548538 A JP 2013548538A JP 5868424 B2 JP5868424 B2 JP 5868424B2
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Japan
Prior art keywords
substrate
opening
etchant
etch
etch process
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Expired - Fee Related
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JP2013548538A
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English (en)
Japanese (ja)
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JP2014502061A (ja
JP2014502061A5 (enExample
Inventor
フーパー，アンディ，イー
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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Publication of JP2014502061A5 publication Critical patent/JP2014502061A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Weting (AREA)
JP2013548538A 2011-01-05 2012-01-05 基板に開口を形成する装置及び方法 Expired - Fee Related JP5868424B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161430045P 2011-01-05 2011-01-05
US61/430,045 2011-01-05
US13/343,640 2012-01-04
US13/343,640 US20120168412A1 (en) 2011-01-05 2012-01-04 Apparatus and method for forming an aperture in a substrate
PCT/US2012/020324 WO2012094490A2 (en) 2011-01-05 2012-01-05 Apparatus and method for forming an aperture in a substrate

Publications (3)

Publication Number Publication Date
JP2014502061A JP2014502061A (ja) 2014-01-23
JP2014502061A5 JP2014502061A5 (enExample) 2015-02-12
JP5868424B2 true JP5868424B2 (ja) 2016-02-24

Family

ID=46379827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013548538A Expired - Fee Related JP5868424B2 (ja) 2011-01-05 2012-01-05 基板に開口を形成する装置及び方法

Country Status (6)

Country Link
US (1) US20120168412A1 (enExample)
JP (1) JP5868424B2 (enExample)
KR (1) KR20130132882A (enExample)
CN (1) CN103348450B (enExample)
TW (1) TWI541888B (enExample)
WO (1) WO2012094490A2 (enExample)

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US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
CN104114506B (zh) * 2012-02-29 2017-05-24 伊雷克托科学工业股份有限公司 加工强化玻璃的方法和装置及藉此制造的物品
DE102013005139A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung
US20150059411A1 (en) * 2013-08-29 2015-03-05 Corning Incorporated Method of separating a glass sheet from a carrier
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
CN108026491B (zh) 2015-08-03 2021-08-13 富士胶片电子材料美国有限公司 清洁组合物
JP2018532148A (ja) * 2015-08-26 2018-11-01 ナショナル ユニバーシティ オブ シンガポール 微小球を保持する膜
CN106166648A (zh) * 2015-09-01 2016-11-30 深圳光韵达光电科技股份有限公司 一种激光钻孔加工方法
US10442720B2 (en) * 2015-10-01 2019-10-15 AGC Inc. Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10292275B2 (en) 2016-04-06 2019-05-14 AGC Inc. Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
CN106684061B (zh) * 2016-12-14 2019-01-25 中国电子科技集团公司第五十五研究所 一种磷化铟背孔的制作方法
CN110099871B (zh) * 2016-12-22 2022-04-05 奇跃公司 用于使用激光烧蚀制造成形光纤元件的方法和系统
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
GB201710324D0 (en) 2017-06-28 2017-08-09 Lig Tech Ltd Microsphere lens assembly
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
US10470300B1 (en) * 2018-07-24 2019-11-05 AGC Inc. Glass panel for wiring board and method of manufacturing wiring board
KR20210064266A (ko) 2018-09-20 2021-06-02 재단법인 공업기술연구원 얇은 유리 상의 유리-관통 비아를 위한 구리 금속화
CN113474311B (zh) 2019-02-21 2023-12-29 康宁股份有限公司 具有铜金属化贯穿孔的玻璃或玻璃陶瓷制品及其制造过程
US20210310122A1 (en) * 2020-04-03 2021-10-07 Applied Materials, Inc. Method of forming holes from both sides of substrate
KR102829971B1 (ko) * 2020-07-02 2025-07-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
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Also Published As

Publication number Publication date
CN103348450A (zh) 2013-10-09
KR20130132882A (ko) 2013-12-05
US20120168412A1 (en) 2012-07-05
TW201230185A (en) 2012-07-16
WO2012094490A3 (en) 2012-09-27
JP2014502061A (ja) 2014-01-23
WO2012094490A2 (en) 2012-07-12
TWI541888B (zh) 2016-07-11
CN103348450B (zh) 2016-08-10

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