JP2014502061A5 - - Google Patents
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- Publication number
- JP2014502061A5 JP2014502061A5 JP2013548538A JP2013548538A JP2014502061A5 JP 2014502061 A5 JP2014502061 A5 JP 2014502061A5 JP 2013548538 A JP2013548538 A JP 2013548538A JP 2013548538 A JP2013548538 A JP 2013548538A JP 2014502061 A5 JP2014502061 A5 JP 2014502061A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- opening
- etch
- etch process
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 34
- -1 fluorocarbon compound Chemical class 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 6
- 230000003993 interaction Effects 0.000 claims 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 241000425571 Trepanes Species 0.000 claims 1
- 150000001805 chlorine compounds Chemical class 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161430045P | 2011-01-05 | 2011-01-05 | |
| US61/430,045 | 2011-01-05 | ||
| US13/343,640 | 2012-01-04 | ||
| US13/343,640 US20120168412A1 (en) | 2011-01-05 | 2012-01-04 | Apparatus and method for forming an aperture in a substrate |
| PCT/US2012/020324 WO2012094490A2 (en) | 2011-01-05 | 2012-01-05 | Apparatus and method for forming an aperture in a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014502061A JP2014502061A (ja) | 2014-01-23 |
| JP2014502061A5 true JP2014502061A5 (enExample) | 2015-02-12 |
| JP5868424B2 JP5868424B2 (ja) | 2016-02-24 |
Family
ID=46379827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013548538A Expired - Fee Related JP5868424B2 (ja) | 2011-01-05 | 2012-01-05 | 基板に開口を形成する装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120168412A1 (enExample) |
| JP (1) | JP5868424B2 (enExample) |
| KR (1) | KR20130132882A (enExample) |
| CN (1) | CN103348450B (enExample) |
| TW (1) | TWI541888B (enExample) |
| WO (1) | WO2012094490A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716128B2 (en) | 2011-04-14 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Methods of forming through silicon via openings |
| US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
| WO2013130549A1 (en) | 2012-02-28 | 2013-09-06 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
| US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
| CN104114506B (zh) * | 2012-02-29 | 2017-05-24 | 伊雷克托科学工业股份有限公司 | 加工强化玻璃的方法和装置及藉此制造的物品 |
| DE102013005139A1 (de) * | 2013-03-26 | 2014-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abtragen von sprödhartem Material mittels Laserstrahlung |
| US20150059411A1 (en) * | 2013-08-29 | 2015-03-05 | Corning Incorporated | Method of separating a glass sheet from a carrier |
| US9776906B2 (en) | 2014-03-28 | 2017-10-03 | Electro Scientific Industries, Inc. | Laser machining strengthened glass |
| US10696932B2 (en) | 2015-08-03 | 2020-06-30 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
| CN117434627A (zh) * | 2015-08-26 | 2024-01-23 | 新加坡国立大学 | 用于保持微球体的膜 |
| CN106166648A (zh) * | 2015-09-01 | 2016-11-30 | 深圳光韵达光电科技股份有限公司 | 一种激光钻孔加工方法 |
| US10442720B2 (en) * | 2015-10-01 | 2019-10-15 | AGC Inc. | Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole |
| US10549386B2 (en) * | 2016-02-29 | 2020-02-04 | Xerox Corporation | Method for ablating openings in unsupported layers |
| US10292275B2 (en) | 2016-04-06 | 2019-05-14 | AGC Inc. | Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole |
| US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
| US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
| US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
| CN106684061B (zh) * | 2016-12-14 | 2019-01-25 | 中国电子科技集团公司第五十五研究所 | 一种磷化铟背孔的制作方法 |
| KR102562171B1 (ko) | 2016-12-22 | 2023-07-31 | 매직 립, 인코포레이티드 | 레이저 삭마를 사용하여 형상화된 섬유 엘리먼트들의 제조를 위한 방법들 및 시스템들 |
| US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| GB201710324D0 (en) | 2017-06-28 | 2017-08-09 | Lig Tech Ltd | Microsphere lens assembly |
| US12180108B2 (en) | 2017-12-19 | 2024-12-31 | Corning Incorporated | Methods for etching vias in glass-based articles employing positive charge organic molecules |
| US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
| US11152294B2 (en) | 2018-04-09 | 2021-10-19 | Corning Incorporated | Hermetic metallized via with improved reliability |
| US10470300B1 (en) * | 2018-07-24 | 2019-11-05 | AGC Inc. | Glass panel for wiring board and method of manufacturing wiring board |
| WO2020061437A1 (en) | 2018-09-20 | 2020-03-26 | Industrial Technology Research Institute | Copper metallization for through-glass vias on thin glass |
| KR20250083587A (ko) | 2019-02-21 | 2025-06-10 | 코닝 인코포레이티드 | 구리-금속화된 쓰루 홀을 갖는 유리 또는 유리 세라믹 물품 및 이를 제조하기 위한 공정 |
| US12680165B2 (en) * | 2020-04-03 | 2026-07-14 | Applied Materials Inc. | Method of forming holes from both sides of substrate |
| KR102829971B1 (ko) * | 2020-07-02 | 2025-07-08 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| CN114256141A (zh) * | 2020-09-24 | 2022-03-29 | 中国科学院微电子研究所 | 一种孔处理方法和半导体器件 |
| US11819948B2 (en) | 2020-10-14 | 2023-11-21 | Applied Materials, Inc. | Methods to fabricate chamber component holes using laser drilling |
| US12030135B2 (en) | 2020-10-14 | 2024-07-09 | Applied Materials, Inc. | Methods to fabricate chamber component holes using laser drilling |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03253025A (ja) * | 1990-03-02 | 1991-11-12 | Nippon Telegr & Teleph Corp <Ntt> | 加工基板及びシリコン異方性エッチング方法 |
| DE69132523D1 (de) * | 1990-05-09 | 2001-03-08 | Canon Kk | Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster |
| US6820330B1 (en) * | 1996-12-13 | 2004-11-23 | Tessera, Inc. | Method for forming a multi-layer circuit assembly |
| JP3957010B2 (ja) * | 1997-06-04 | 2007-08-08 | 日本板硝子株式会社 | 微細孔を有するガラス基材 |
| US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
| WO2000050198A1 (en) * | 1999-02-25 | 2000-08-31 | Seiko Epson Corporation | Method for machining work by laser beam |
| JP2000246474A (ja) * | 1999-02-25 | 2000-09-12 | Seiko Epson Corp | レーザ光による加工方法 |
| JP2002313914A (ja) * | 2001-04-18 | 2002-10-25 | Sony Corp | 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
| US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US7598167B2 (en) * | 2004-08-24 | 2009-10-06 | Micron Technology, Inc. | Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures |
| US7378342B2 (en) * | 2004-08-27 | 2008-05-27 | Micron Technology, Inc. | Methods for forming vias varying lateral dimensions |
| US7109068B2 (en) * | 2004-08-31 | 2006-09-19 | Micron Technology, Inc. | Through-substrate interconnect fabrication methods |
| JP4840200B2 (ja) * | 2007-03-09 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
| US7989318B2 (en) * | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
| US9685186B2 (en) * | 2009-02-27 | 2017-06-20 | Applied Materials, Inc. | HDD pattern implant system |
-
2012
- 2012-01-04 US US13/343,640 patent/US20120168412A1/en not_active Abandoned
- 2012-01-05 TW TW101100426A patent/TWI541888B/zh not_active IP Right Cessation
- 2012-01-05 JP JP2013548538A patent/JP5868424B2/ja not_active Expired - Fee Related
- 2012-01-05 KR KR1020137016689A patent/KR20130132882A/ko not_active Ceased
- 2012-01-05 WO PCT/US2012/020324 patent/WO2012094490A2/en not_active Ceased
- 2012-01-05 CN CN201280004581.5A patent/CN103348450B/zh not_active Expired - Fee Related
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