TW201515067A - 減少形成在半導體晶圓上的磊晶膜中的裂痕擴散的方法及結構 - Google Patents
減少形成在半導體晶圓上的磊晶膜中的裂痕擴散的方法及結構 Download PDFInfo
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Abstract
一種減少磊晶膜中的裂痕的影響的方法。此方法包含:提供有磊晶膜於其上的半導體晶圓;檢視磊晶膜以決定具有裂痕於其間的磊晶膜的外周邊邊緣區域;以及選擇性移除被決定的磊晶膜的外周邊邊緣區域,同時留下被移除的被決定的磊晶膜的外周邊邊緣區域之下的半導體晶圓的部分。
Description
本發明係一般關於減少形成在半導體晶圓上的磊晶膜中的裂痕擴散的方法及結構,且更特別是關於減少具有與半導體晶圓的晶體結構不同的晶體結構的磊晶膜中的裂痕擴散的方法。
如習知的技術,成長在矽基板上的三氮族(Group III-N)磊晶膜易於具有高應力發展於膜中,造成裂痕形成在磊晶層的邊緣,因為後續的製程,裂痕可能進一步擴散進入磊晶層的內部區域。於製程中,有磊晶層的晶圓暴露於後續的機械應力,例如靜電夾頭、背側真空及機器人真空操作以及熱應力,如在薄膜沉積及退火時,其可造成在磊晶膜的邊緣的裂痕擴散且劣化磊晶膜及/或造成晶圓破裂。
根據本發明,提供一種方法,包含:提供有磊晶膜於其上的半導體晶圓;檢視磊晶膜以決定具有裂痕於其間的磊晶膜的外周邊邊緣區域;以及選擇性移除被決定的磊晶膜的外周邊邊緣區域,同時留下被移除的被決定的磊晶膜的外周邊邊緣區域之下的半導體晶圓的部分。
於一實施方式中,磊晶膜具有與半導體晶圓的晶體結構不同的晶體結構。
於一實施方式中,晶圓係矽且磊晶膜係氮的化合物。
於一實施方式中,晶圓係矽且磊晶膜係三氮族材料。
於一實施方式中,晶圓係矽且磊晶膜係氮化鎵。
於一實施方式中,矽係<111>矽。
於一實施方式中,提供一種方法,包含:提供有磊晶膜於其上的半導體晶圓,磊晶膜具有有裂痕於其間的外周邊區域;以及選擇性移除磊晶膜的外周邊區域,同時留下被移除的被決定的磊晶膜的外周邊區域之下的半導體晶圓的部分。
於一實施方式中,提供一種半導體結構,包含:半導體晶圓,晶圓具有外周邊邊緣;以及磊晶膜設置在半導體晶圓的中心部分上且與半導體晶圓的中心部分直接接觸,並且從晶圓的周邊邊緣被位移預定的距離。
利用此種方法,三氮族磊晶膜的邊緣的裂痕從矽基板移除。因此,邊緣裂痕被消滅且在後續的製程中不再經由磊晶膜擴散。
本發明的一或更多實施方式的細節伴隨以下的圖式及說明書提出。本發明的其它特徵、目標及優點將在以下的說明書及圖式,以及從申請專利範圍中顯明。
10‧‧‧結構
12‧‧‧晶圓
14‧‧‧磊晶膜
16‧‧‧保護層
18‧‧‧光阻
圖1A至1E係圖示截面圖,以誇大的尺度沿著圓形半導體晶圓的直徑顯示根據本發明的減少形成在半導體晶圓的表面上的磊晶膜中的裂痕擴散的方法。
在不同圖中的相似的參考編號表示相似的元件。
現在參照圖1A,結構10具有半導體晶圓12,此處<111>矽晶圓具有此處的直徑,例如,顯示8吋直徑的圓形晶圓。晶圓12具有磊晶膜14,此處氮的化合物,例如三氮族膜,如可包含例如AlGaN的層的GaN。在得到具有晶圓12及磊晶膜14於其上的結構10之後,檢視在磊晶膜14的外周邊邊緣的裂痕。這些裂痕可存在從邊緣往內至5mm(0.197吋)處。檢視用於決定裂痕已從邊緣擴散進入磊晶膜14的內部區域的情形。一旦此已決定,形成磊晶膜14的保護層16(圖1B)在磊晶
膜14的上表面上。保護層16可為,例如介電質如原子層沉積(ALD)的Al2O3。需注意的是保護層16的使用是在製程中的選擇性的步驟。
之後,參照圖1C,保護層16塗佈有光阻層18,例如,SPR-220光阻,並且圖案化,使用任何傳統的光微影製程或蝕刻晶邊移除製程,以留下在磊晶膜14的內部部分上的光阻18的部分且移除從約在磊晶膜14的外邊緣周邊區域20的區域,且其中被決定裂痕存在磊晶膜14中的光阻18的部分,如圖1C所示。可理解的是若未使用保護層16,光阻18將直接沉積於磊晶膜14的表面且微影的製程如上所述。或者,可使用陰影遮罩以暴露晶圓的邊緣。
之後,參照圖1D,圖1C中所示的結構的表面受在氯基化學中的電漿蝕刻以移除保護層16的部分以及由光阻18暴露的磊晶膜14的下伏部分。需注意的是為確保完整移除保護層16被暴露的部分,蝕刻製程可移除晶圓12的小的上暴露表面部分。因此,製程選擇性移除磊晶膜的被決定的外周邊邊緣區域,同時留下被移除的被決定的磊晶膜的外周邊區域之下的半導體晶圓的部分。因此,提供具有有外周邊緣的半導體晶圓12的半導體結構(圖1E);且設置磊晶膜14在半導體晶圓12的中心部分上且直接接觸半導體晶圓12的中心部分,並且從晶圓12的週邊邊緣被位移預定的距離。所產生的結構,如圖1E所示,藉由現在邊緣裂痕從磊晶層的外周邊邊緣部分
被移除,現在準備好進行進一步的製程。
現在,可以理解的是,根據本發明,一種方法,包含:提供有磊晶膜於其上的半導體晶圓;檢視磊晶膜以決定具有裂痕於其間的磊晶膜的外周邊邊緣區域;以及選擇性移除被決定的磊晶膜的外周邊邊緣區域,同時留下被移除的被決定的磊晶膜的外周邊邊緣區域之下的半導體晶圓的部分。此方法可包含一或更多以下的特徵,獨立地或與其它特徵結合,包含:其中,磊晶膜具有與半導體晶圓的晶體結構不同的晶體結構;其中,晶圓係矽且磊晶膜係氮的化合物;其中,晶圓係矽且磊晶膜係三氮族材料;其中,晶圓係矽且磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵;或其中,矽具有<111>矽。或是,根據本發明,一種方法,包含:提供有磊晶膜於其上的半導體晶圓,磊晶膜具有有裂痕於其間的外周邊區域;選擇性移除磊晶膜的外周邊區域,同時留下被移除的被決定的磊晶膜的外周邊區域之下的半導體晶圓的部分。此方法可包含一或更多以下的特徵,獨立地或與其它特徵結合,包含:其中,磊晶膜具有與半導體晶圓的晶體結構不同的晶體結構;其中,晶圓係矽且磊晶膜係氮的化合物;其中,晶圓係矽且磊晶膜係三氮族材料;其中,晶圓係矽且磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵;或其中,矽具有<111>矽。
現在,可以理解的是,根據本發明,一種半導體結構,包含:半導體晶圓,晶圓具有外周邊邊緣;磊
晶膜設置在半導體晶圓的中心部分上且與半導體晶圓的中心部分直接接觸,並且從晶圓的周邊邊緣被位移預定的距離。此半導體結構可包含一或更多以下的特徵,獨立地或與其它特徵結合,包含:其中,磊晶膜具有與半導體晶圓的晶體結構不同的晶體結構;其中,晶圓係矽且磊晶膜係氮的化合物;其中,晶圓係矽且磊晶膜係三氮族材料;其中,晶圓係矽且磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵;其中,矽具有<111>矽。
敘述了本發明的許多實施方式。唯,可以理解的是可進行許多修改而不脫離本發明的精神及範圍。因此,其它的實施方式亦於以下的申請專利範圍中。
10‧‧‧結構
12‧‧‧晶圓
14‧‧‧磊晶膜
Claims (18)
- 一種方法,包含:提供有磊晶膜於其上的半導體晶圓;檢視該磊晶膜以決定具有裂痕於其間的該磊晶膜的外周邊邊緣區域;以及選擇性移除被決定的該磊晶膜的該外周邊邊緣區域,同時留下被移除的被決定的該磊晶膜的該外周邊邊緣區域之下的該半導體晶圓的部分。
- 如請求項第1項的方法,其中,該磊晶膜具有與該半導體晶圓的晶體結構不同的晶體結構。
- 如請求項第2項的方法,其中,該晶圓係矽且該磊晶膜係氮的化合物。
- 如請求項第2項的方法,其中,該晶圓係矽且該磊晶膜係三氮族材料。
- 如請求項第1項的方法,其中,該晶圓係矽且該磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵。
- 如請求項第5項的方法,其中,該矽具有<111>矽。
- 一種方法,包含:提供有磊晶膜於其上的半導體晶圓,該磊晶膜具有有裂痕於其間的外周邊區域;選擇性移除該磊晶膜的該外周邊區域,同時留下被移除的被決定的該磊晶膜的該外周邊區域之下的該半導體晶圓的部分。
- 如請求項第7項的方法,其中,該磊晶膜具有與該半導體晶圓的晶體結構不同的晶體結構。
- 如請求項第8項的方法,其中,該晶圓係矽且該磊晶膜係氮的化合物。
- 如請求項第8項的方法,其中,該晶圓係矽且該磊晶膜係三氮族材料。
- 如請求項第7項的方法,其中,該晶圓係矽且該磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵。
- 如請求項第11項的方法,其中,該矽具有<111>矽。
- 一種半導體結構,包含:半導體晶圓,該晶圓具有外周邊邊緣;磊晶膜設置在該半導體晶圓的中心部分上且與該半導體晶圓的該中心部分直接接觸,並且從該晶圓的該周邊邊緣被位移預定的距離。
- 如請求項第13項的半導體結構,其中,該磊晶膜具有與該半導體晶圓的晶體結構不同的晶體結構。
- 如請求項第14項的半導體結構,其中,該晶圓係矽且該磊晶膜係氮的化合物。
- 如請求項第14項的半導體結構,其中,該晶圓係矽且該磊晶膜係三氮族材料。
- 如請求項第13項的半導體結構,其中,該晶圓係矽且該磊晶膜係氮化鎵、氮化銦鎵、氮化鋁或氮化鋁銦鎵。
- 如請求項第17項的方法,其中,該矽具有<111>矽。
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