TWI540648B - 具有增加的緩衝崩潰電壓之三族氮化物ｈｅｍｔ - Google Patents
具有增加的緩衝崩潰電壓之三族氮化物ｈｅｍｔ Download PDFInfo
- Publication number
- TWI540648B TWI540648B TW100136918A TW100136918A TWI540648B TW I540648 B TWI540648 B TW I540648B TW 100136918 A TW100136918 A TW 100136918A TW 100136918 A TW100136918 A TW 100136918A TW I540648 B TWI540648 B TW I540648B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- buffer layer
- top surface
- well
- substrate
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims description 62
- 230000015556 catabolic process Effects 0.000 title description 21
- 239000000758 substrate Substances 0.000 claims description 63
- 230000004888 barrier function Effects 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 40
- 238000002955 isolation Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 39
- 239000007943 implant Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/908,458 US8502273B2 (en) | 2010-10-20 | 2010-10-20 | Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201222677A TW201222677A (en) | 2012-06-01 |
| TWI540648B true TWI540648B (zh) | 2016-07-01 |
Family
ID=45972253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100136918A TWI540648B (zh) | 2010-10-20 | 2011-10-12 | 具有增加的緩衝崩潰電壓之三族氮化物ｈｅｍｔ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8502273B2 (enExample) |
| JP (1) | JP5885750B2 (enExample) |
| CN (1) | CN103201840B (enExample) |
| TW (1) | TWI540648B (enExample) |
| WO (1) | WO2012054122A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120126334A1 (en) * | 2010-11-24 | 2012-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Breakdown voltage improvement with a floating substrate |
| JP5879805B2 (ja) * | 2011-08-09 | 2016-03-08 | 富士通株式会社 | スイッチング素子及びこれを用いた電源装置 |
| DE102012207501B4 (de) * | 2012-05-07 | 2017-03-02 | Forschungsverbund Berlin E.V. | Halbleiterschichtenstruktur |
| US9076763B2 (en) * | 2012-08-13 | 2015-07-07 | Infineon Technologies Austria Ag | High breakdown voltage III-nitride device |
| JP6017248B2 (ja) | 2012-09-28 | 2016-10-26 | トランスフォーム・ジャパン株式会社 | 半導体装置の製造方法及び半導体装置 |
| CN103117303B (zh) * | 2013-02-07 | 2016-08-17 | 苏州晶湛半导体有限公司 | 一种氮化物功率器件及其制造方法 |
| EP3154092B1 (en) * | 2013-02-15 | 2021-12-15 | AZUR SPACE Solar Power GmbH | P-doping of group iii-nitride buffer layer structure on a heterosubstrate |
| CN104347695A (zh) * | 2013-07-31 | 2015-02-11 | 浙江大学苏州工业技术研究院 | 一种提高器件纵向耐压能力的半导体装置 |
| CN103531615A (zh) * | 2013-10-15 | 2014-01-22 | 苏州晶湛半导体有限公司 | 氮化物功率晶体管及其制造方法 |
| KR102127441B1 (ko) | 2013-12-02 | 2020-06-26 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 회로 |
| CN103887325A (zh) * | 2013-12-18 | 2014-06-25 | 杭州恩能科技有限公司 | 一种提高器件耐压能力的半导体装置及其制备方法 |
| JP2017055008A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
| US10312378B2 (en) * | 2017-01-30 | 2019-06-04 | QROMIS, Inc. | Lateral gallium nitride JFET with controlled doping profile |
| US11139290B2 (en) * | 2018-09-28 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage cascode HEMT device |
| US11251294B2 (en) | 2020-03-24 | 2022-02-15 | Infineon Technologies Austria Ag | High voltage blocking III-V semiconductor device |
| JP7528583B2 (ja) * | 2020-07-13 | 2024-08-06 | 富士通株式会社 | 半導体装置 |
| US20230197842A1 (en) * | 2021-12-20 | 2023-06-22 | International Business Machines Corporation | High electron mobility transistor with gate electrode below the channel |
| WO2024011610A1 (en) * | 2022-07-15 | 2024-01-18 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and method for manufacturing thereof |
| CN117747654A (zh) * | 2022-09-14 | 2024-03-22 | 乂馆信息科技(上海)有限公司 | 一种新型拓扑的hemt器件 |
| US20250118679A1 (en) * | 2023-10-10 | 2025-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field effect transistor with alignment mark and related methods |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3029366A (en) | 1959-04-22 | 1962-04-10 | Sprague Electric Co | Multiple semiconductor assembly |
| US3859127A (en) | 1972-01-24 | 1975-01-07 | Motorola Inc | Method and material for passivating the junctions of mesa type semiconductor devices |
| US4980315A (en) | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
| US6120909A (en) | 1998-08-19 | 2000-09-19 | International Business Machines Corporation | Monolithic silicon-based nitride display device |
| US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
| JP2006196869A (ja) * | 2004-12-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7800097B2 (en) * | 2004-12-13 | 2010-09-21 | Panasonic Corporation | Semiconductor device including independent active layers and method for fabricating the same |
| JP4939749B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
| US20070018198A1 (en) | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
| US7566918B2 (en) | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
| US20080001173A1 (en) * | 2006-06-23 | 2008-01-03 | International Business Machines Corporation | BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICS |
| US8212290B2 (en) | 2007-03-23 | 2012-07-03 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
| JP2010010262A (ja) * | 2008-06-25 | 2010-01-14 | Panasonic Electric Works Co Ltd | 半導体装置 |
| JPWO2010001607A1 (ja) * | 2008-07-03 | 2011-12-15 | パナソニック株式会社 | 窒化物半導体装置 |
| JP2010206048A (ja) * | 2009-03-05 | 2010-09-16 | Panasonic Corp | 電界効果トランジスタ装置 |
| DE102009018054B4 (de) * | 2009-04-21 | 2018-11-29 | Infineon Technologies Austria Ag | Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT |
| WO2011024367A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 窒化物半導体装置 |
-
2010
- 2010-10-20 US US12/908,458 patent/US8502273B2/en active Active
-
2011
- 2011-07-31 JP JP2013534901A patent/JP5885750B2/ja active Active
- 2011-07-31 WO PCT/US2011/046065 patent/WO2012054122A1/en not_active Ceased
- 2011-07-31 CN CN201180050701.0A patent/CN103201840B/zh active Active
- 2011-10-12 TW TW100136918A patent/TWI540648B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5885750B2 (ja) | 2016-03-15 |
| TW201222677A (en) | 2012-06-01 |
| CN103201840B (zh) | 2016-11-02 |
| US8502273B2 (en) | 2013-08-06 |
| CN103201840A (zh) | 2013-07-10 |
| JP2013544021A (ja) | 2013-12-09 |
| WO2012054122A1 (en) | 2012-04-26 |
| US20120098035A1 (en) | 2012-04-26 |
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