JP5885750B2 - バッファ降伏電圧が増大されたｈｅｍｔ - Google Patents

バッファ降伏電圧が増大されたｈｅｍｔ Download PDF

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JP5885750B2
JP5885750B2 JP2013534901A JP2013534901A JP5885750B2 JP 5885750 B2 JP5885750 B2 JP 5885750B2 JP 2013534901 A JP2013534901 A JP 2013534901A JP 2013534901 A JP2013534901 A JP 2013534901A JP 5885750 B2 JP5885750 B2 JP 5885750B2
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buffer layer
layer
contact
well
region
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JP2013544021A5 (enExample
JP2013544021A (ja
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バヘル サンディープ
バヘル サンディープ
ブルシー コンスタンチン
ブルシー コンスタンチン
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National Semiconductor Corp
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National Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2013534901A 2010-10-20 2011-07-31 バッファ降伏電圧が増大されたｈｅｍｔ Active JP5885750B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/908,458 US8502273B2 (en) 2010-10-20 2010-10-20 Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same
US12/908,458 2010-10-20
PCT/US2011/046065 WO2012054122A1 (en) 2010-10-20 2011-07-31 Hemt with increased buffer breakdown voltage

Publications (3)

Publication Number Publication Date
JP2013544021A JP2013544021A (ja) 2013-12-09
JP2013544021A5 JP2013544021A5 (enExample) 2014-08-07
JP5885750B2 true JP5885750B2 (ja) 2016-03-15

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JP2013534901A Active JP5885750B2 (ja) 2010-10-20 2011-07-31 バッファ降伏電圧が増大されたｈｅｍｔ

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US (1) US8502273B2 (enExample)
JP (1) JP5885750B2 (enExample)
CN (1) CN103201840B (enExample)
TW (1) TWI540648B (enExample)
WO (1) WO2012054122A1 (enExample)

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US20120126334A1 (en) * 2010-11-24 2012-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown voltage improvement with a floating substrate
JP5879805B2 (ja) * 2011-08-09 2016-03-08 富士通株式会社 スイッチング素子及びこれを用いた電源装置
DE102012207501B4 (de) * 2012-05-07 2017-03-02 Forschungsverbund Berlin E.V. Halbleiterschichtenstruktur
US9076763B2 (en) * 2012-08-13 2015-07-07 Infineon Technologies Austria Ag High breakdown voltage III-nitride device
JP6017248B2 (ja) 2012-09-28 2016-10-26 トランスフォーム・ジャパン株式会社 半導体装置の製造方法及び半導体装置
CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法
EP3154092B1 (en) * 2013-02-15 2021-12-15 AZUR SPACE Solar Power GmbH P-doping of group iii-nitride buffer layer structure on a heterosubstrate
CN104347695A (zh) * 2013-07-31 2015-02-11 浙江大学苏州工业技术研究院 一种提高器件纵向耐压能力的半导体装置
CN103531615A (zh) * 2013-10-15 2014-01-22 苏州晶湛半导体有限公司 氮化物功率晶体管及其制造方法
KR102127441B1 (ko) 2013-12-02 2020-06-26 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 반도체 회로
CN103887325A (zh) * 2013-12-18 2014-06-25 杭州恩能科技有限公司 一种提高器件耐压能力的半导体装置及其制备方法
JP2017055008A (ja) * 2015-09-11 2017-03-16 株式会社東芝 半導体装置
US10312378B2 (en) * 2017-01-30 2019-06-04 QROMIS, Inc. Lateral gallium nitride JFET with controlled doping profile
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
US11251294B2 (en) 2020-03-24 2022-02-15 Infineon Technologies Austria Ag High voltage blocking III-V semiconductor device
JP7528583B2 (ja) * 2020-07-13 2024-08-06 富士通株式会社 半導体装置
US20230197842A1 (en) * 2021-12-20 2023-06-22 International Business Machines Corporation High electron mobility transistor with gate electrode below the channel
WO2024011610A1 (en) * 2022-07-15 2024-01-18 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and method for manufacturing thereof
CN117747654A (zh) * 2022-09-14 2024-03-22 乂馆信息科技(上海)有限公司 一种新型拓扑的hemt器件
US20250118679A1 (en) * 2023-10-10 2025-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with alignment mark and related methods

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US3859127A (en) 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
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JP2006196869A (ja) * 2004-12-13 2006-07-27 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7800097B2 (en) * 2004-12-13 2010-09-21 Panasonic Corporation Semiconductor device including independent active layers and method for fabricating the same
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JP2010010262A (ja) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd 半導体装置
JPWO2010001607A1 (ja) * 2008-07-03 2011-12-15 パナソニック株式会社 窒化物半導体装置
JP2010206048A (ja) * 2009-03-05 2010-09-16 Panasonic Corp 電界効果トランジスタ装置
DE102009018054B4 (de) * 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
WO2011024367A1 (ja) * 2009-08-27 2011-03-03 パナソニック株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
TW201222677A (en) 2012-06-01
CN103201840B (zh) 2016-11-02
TWI540648B (zh) 2016-07-01
US8502273B2 (en) 2013-08-06
CN103201840A (zh) 2013-07-10
JP2013544021A (ja) 2013-12-09
WO2012054122A1 (en) 2012-04-26
US20120098035A1 (en) 2012-04-26

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