TWI533426B - 導線架及半導體裝置 - Google Patents

導線架及半導體裝置 Download PDF

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Publication number
TWI533426B
TWI533426B TW101110141A TW101110141A TWI533426B TW I533426 B TWI533426 B TW I533426B TW 101110141 A TW101110141 A TW 101110141A TW 101110141 A TW101110141 A TW 101110141A TW I533426 B TWI533426 B TW I533426B
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Taiwan
Prior art keywords
plating layer
layer
lead frame
plating
wire
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TW101110141A
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English (en)
Chinese (zh)
Other versions
TW201246492A (en
Inventor
吳宗昭
吉江崇
大串正幸
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新光電氣工業股份有限公司
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Publication of TW201246492A publication Critical patent/TW201246492A/zh
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Publication of TWI533426B publication Critical patent/TWI533426B/zh

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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L23/495—Lead-frames or other flat leads
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/1576—Iron [Fe] as principal constituent

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW101110141A 2011-03-29 2012-03-23 導線架及半導體裝置 TWI533426B (zh)

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JP2008091818A (ja) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法
US8703545B2 (en) * 2012-02-29 2014-04-22 Alpha & Omega Semiconductor, Inc. Aluminum alloy lead-frame and its use in fabrication of power semiconductor package
JP6057285B2 (ja) * 2012-10-26 2017-01-11 Ｓｈマテリアル株式会社 半導体素子搭載用基板
JP6095997B2 (ja) * 2013-02-13 2017-03-15 エスアイアイ・セミコンダクタ株式会社 樹脂封止型半導体装置の製造方法
KR101802851B1 (ko) * 2013-03-11 2017-11-29 해성디에스 주식회사 리드 프레임, 이를 포함하는 반도체 패키지, 및 리드 프레임의 제조 방법
US9728493B2 (en) * 2015-08-28 2017-08-08 Infineon Technologies Ag Mold PackageD semiconductor chip mounted on a leadframe and method of manufacturing the same
JP6752639B2 (ja) 2016-05-02 2020-09-09 ローム株式会社 半導体装置の製造方法
US10388616B2 (en) 2016-05-02 2019-08-20 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
JP2018024832A (ja) * 2016-07-29 2018-02-15 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物および半導体装置
JP6750416B2 (ja) * 2016-09-14 2020-09-02 富士電機株式会社 半導体モジュールおよび半導体モジュールの製造方法
JP2018056451A (ja) * 2016-09-30 2018-04-05 ルネサスエレクトロニクス株式会社 半導体装置
JP6772087B2 (ja) * 2017-02-17 2020-10-21 新光電気工業株式会社 リードフレーム及びその製造方法
JP7037368B2 (ja) * 2018-01-09 2022-03-16 ローム株式会社 半導体装置および半導体装置の製造方法
CN110265376A (zh) * 2018-03-12 2019-09-20 意法半导体股份有限公司 引线框架表面精整
US11545418B2 (en) * 2018-10-24 2023-01-03 Texas Instruments Incorporated Thermal capacity control for relative temperature-based thermal shutdown
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same
KR102586964B1 (ko) * 2022-04-05 2023-10-11 해성디에스 주식회사 반도체 패키지 기판, 이를 포함하는 반도체 패키지, 및 반도체 패키지 기판의 제조방법
KR102695962B1 (ko) * 2022-11-21 2024-08-20 해성디에스 주식회사 리드 프레임 및 그 리드 프레임을 포함하는 반도체 패키지

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KR100231828B1 (ko) * 1997-02-20 1999-12-01 유무성 다층 도금 리드프레임
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JP4715772B2 (ja) * 2007-02-28 2011-07-06 株式会社デンソー 半導体装置

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CN102738109A (zh) 2012-10-17
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US8581379B2 (en) 2013-11-12

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