JP6772087B2 - リードフレーム及びその製造方法 - Google Patents
リードフレーム及びその製造方法 Download PDFInfo
- Publication number
- JP6772087B2 JP6772087B2 JP2017028221A JP2017028221A JP6772087B2 JP 6772087 B2 JP6772087 B2 JP 6772087B2 JP 2017028221 A JP2017028221 A JP 2017028221A JP 2017028221 A JP2017028221 A JP 2017028221A JP 6772087 B2 JP6772087 B2 JP 6772087B2
- Authority
- JP
- Japan
- Prior art keywords
- frame
- outer frame
- lead frame
- lead
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
- H10W70/424—Cross-sectional shapes
- H10W70/427—Bent parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/02—Deburring or deflashing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/042—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
- H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/411—Chip-supporting parts, e.g. die pads
- H10W70/417—Bonding materials between chips and die pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
- H10W70/424—Cross-sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/451—Multilayered leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Geometry (AREA)
Description
図2〜図8は実施形態のリードフレームを説明するための図、図9〜図13は実施形態のリードフレームの製造方法を説明するための図である。
Claims (10)
- 矩形状の外枠と、
前記外枠の一方の面から側面にかけて形成された凹部と、
前記外枠の他方の面から側面にかけて形成された切欠段差部と
を有し、
前記凹部の側壁と前記側面とが接する部分が曲面状であることを特徴とするリードフレーム。 - 前記切欠段差部は、前記外枠の長手方向の前記側面の一端から他端まで一体的に形成されていることを特徴とする請求項1に記載のリードフレーム。
- 前記凹部は所定の間隔を空けて並んで配置されており、
前記凹部同士の間の前記側面の端は、平面視で平坦部となっていることを特徴とする請求項1又は2に記載のリードフレーム。 - 前記凹部及び前記切欠段差部は、前記外枠の長手方向の両側の前記側面にそれぞれ形成されていることを特徴とする請求項1乃至3のいずれか一項に記載のリードフレーム。
- 前記凹部及び前記切欠段差部の各内面は、凹状曲面となっていることを特徴とする請求項1乃至4のいずれか一項に記載のリードフレーム。
- 複数のフレーム領域が区画された金属板を用意する工程と、
前記金属板の両面側の前記フレーム領域に、フレーム部材を得るためのレジスト層をそれぞれパターニングする工程と、
前記レジスト層をマスクにして前記金属板を両面側からウェットエッチングすることにより、矩形状の外枠と、前記外枠の一方の面から側面にかけて形成される凹部と、前記外枠の他方の面から側面にかけて形成される切欠段差部とを含むフレーム部材を前記複数のフレーム領域に形成する工程と、
前記レジスト層を除去する工程と、
前記複数のフレーム領域に配置された前記フレーム部材を分離して、個々のリードフレームを得る工程とを有し、
前記凹部の側壁と前記側面とが接する部分が曲面状に形成されることを特徴とするリードフレームの製造方法。 - 前記レジスト層を形成する工程において、
前記金属板の一方の面に形成される前記レジスト層は、外枠パターンと、前記外枠パターンの側面に配置された切欠部とを含み、前記凹部は前記レジスト層の切欠部に対応して形成され、
平面視で前記切欠部の側壁と前記外枠パターンの側面とが接する角度が90°を超えて135°以下に設定されることを特徴とする請求項6に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記切欠段差部は、前記外枠の長手方向の前記側面の一端から他端まで一体的に形成されることを特徴とする請求項6又は7に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記凹部同士の間の側面の端が平面視で平坦部となって形成されることを特徴とする請求項6乃至8のいずれか一項に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記凹部及び前記切欠段差部は、前記外枠の長手方向の両側の前記側面にそれぞれ形成されることを特徴とする請求項6乃至9のいずれか一項に記載のリードフレームの製造方法。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017028221A JP6772087B2 (ja) | 2017-02-17 | 2017-02-17 | リードフレーム及びその製造方法 |
| US15/880,011 US10201917B2 (en) | 2017-02-17 | 2018-01-25 | Lead frame |
| TW107103839A TWI733981B (zh) | 2017-02-17 | 2018-02-02 | 導線架 |
| CN201810135204.4A CN108461470B (zh) | 2017-02-17 | 2018-02-09 | 引线框架 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017028221A JP6772087B2 (ja) | 2017-02-17 | 2017-02-17 | リードフレーム及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018133532A JP2018133532A (ja) | 2018-08-23 |
| JP6772087B2 true JP6772087B2 (ja) | 2020-10-21 |
Family
ID=63166344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017028221A Active JP6772087B2 (ja) | 2017-02-17 | 2017-02-17 | リードフレーム及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10201917B2 (ja) |
| JP (1) | JP6772087B2 (ja) |
| CN (1) | CN108461470B (ja) |
| TW (1) | TWI733981B (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI676252B (zh) * | 2018-07-23 | 2019-11-01 | 長華科技股份有限公司 | 導線架及其製造方法 |
| US11393774B2 (en) | 2019-08-21 | 2022-07-19 | Stmicroelectronics, Inc. | Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads |
| US11211320B2 (en) * | 2019-12-31 | 2021-12-28 | Texas Instruments Incorporated | Package with shifted lead neck |
| JP7292776B2 (ja) * | 2020-01-30 | 2023-06-19 | 大口マテリアル株式会社 | リードフレーム |
| CN114062076A (zh) * | 2021-11-04 | 2022-02-18 | 九江德福科技股份有限公司 | 一种用于铜箔晶体分析的样品制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4862246A (en) * | 1984-09-26 | 1989-08-29 | Hitachi, Ltd. | Semiconductor device lead frame with etched through holes |
| US6949816B2 (en) * | 2003-04-21 | 2005-09-27 | Motorola, Inc. | Semiconductor component having first surface area for electrically coupling to a semiconductor chip and second surface area for electrically coupling to a substrate, and method of manufacturing same |
| JP3062192B1 (ja) * | 1999-09-01 | 2000-07-10 | 松下電子工業株式会社 | リ―ドフレ―ムとそれを用いた樹脂封止型半導体装置の製造方法 |
| US7042068B2 (en) * | 2000-04-27 | 2006-05-09 | Amkor Technology, Inc. | Leadframe and semiconductor package made using the leadframe |
| AU2002228773A1 (en) * | 2000-10-31 | 2002-05-15 | Motorola, Inc. | A leadframe and semiconductor package |
| KR20040037575A (ko) * | 2002-10-29 | 2004-05-07 | 한국시그네틱스 주식회사 | 사선형 에칭부를 갖는 엠.엘.피(mlp)형 반도체 패키지 |
| TW200418149A (en) * | 2003-03-11 | 2004-09-16 | Siliconware Precision Industries Co Ltd | Surface-mount-enhanced lead frame and method for fabricating semiconductor package with the same |
| JP2004319816A (ja) | 2003-04-17 | 2004-11-11 | Fujitsu Ltd | リードフレーム及びその製造方法 |
| US7087462B1 (en) * | 2005-06-07 | 2006-08-08 | Advanced Semiconductor Engineering, Inc. | Method for forming leadless semiconductor packages |
| US7683463B2 (en) * | 2007-04-19 | 2010-03-23 | Fairchild Semiconductor Corporation | Etched leadframe structure including recesses |
| US9263315B2 (en) * | 2010-03-30 | 2016-02-16 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
| US8519518B2 (en) * | 2010-09-24 | 2013-08-27 | Stats Chippac Ltd. | Integrated circuit packaging system with lead encapsulation and method of manufacture thereof |
| KR101778832B1 (ko) * | 2010-11-02 | 2017-09-14 | 다이니폰 인사츠 가부시키가이샤 | Led 소자 탑재용 리드 프레임, 수지 부착 리드 프레임, 반도체 장치의 제조 방법 및 반도체 소자 탑재용 리드 프레임 |
| US20120126378A1 (en) * | 2010-11-24 | 2012-05-24 | Unisem (Mauritius ) Holdings Limited | Semiconductor device package with electromagnetic shielding |
| JP5762078B2 (ja) * | 2011-03-28 | 2015-08-12 | 新光電気工業株式会社 | リードフレーム |
| JP5762081B2 (ja) * | 2011-03-29 | 2015-08-12 | 新光電気工業株式会社 | リードフレーム及び半導体装置 |
| JP5804369B2 (ja) * | 2011-09-09 | 2015-11-04 | 大日本印刷株式会社 | 半導体素子用リードフレーム、樹脂付半導体素子用リードフレームおよび半導体装置、並びに、半導体素子用リードフレームの製造方法、樹脂付半導体素子用リードフレームの製造方法および半導体装置の製造方法 |
| JP5953703B2 (ja) * | 2011-10-31 | 2016-07-20 | ソニー株式会社 | リードフレームおよび半導体装置 |
| JP6291713B2 (ja) * | 2013-03-14 | 2018-03-14 | 日亜化学工業株式会社 | 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム |
| JP6319644B2 (ja) * | 2013-10-01 | 2018-05-09 | 大日本印刷株式会社 | リードフレームおよびその製造方法、ならびに半導体装置の製造方法 |
| WO2015145651A1 (ja) * | 2014-03-27 | 2015-10-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| TWI549323B (zh) * | 2014-06-04 | 2016-09-11 | 日月光半導體製造股份有限公司 | 半導體導線架封裝及發光二極體封裝 |
| JP6617955B2 (ja) * | 2014-09-16 | 2019-12-11 | 大日本印刷株式会社 | リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 |
| JP6390011B2 (ja) * | 2014-12-25 | 2018-09-19 | 大口マテリアル株式会社 | リードフレーム及びその製造方法 |
-
2017
- 2017-02-17 JP JP2017028221A patent/JP6772087B2/ja active Active
-
2018
- 2018-01-25 US US15/880,011 patent/US10201917B2/en active Active
- 2018-02-02 TW TW107103839A patent/TWI733981B/zh active
- 2018-02-09 CN CN201810135204.4A patent/CN108461470B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180236696A1 (en) | 2018-08-23 |
| CN108461470A (zh) | 2018-08-28 |
| TWI733981B (zh) | 2021-07-21 |
| CN108461470B (zh) | 2022-07-01 |
| US10201917B2 (en) | 2019-02-12 |
| TW201842641A (zh) | 2018-12-01 |
| JP2018133532A (ja) | 2018-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6772087B2 (ja) | リードフレーム及びその製造方法 | |
| JP6757274B2 (ja) | リードフレーム及びその製造方法 | |
| US9779966B2 (en) | Lead frame and semiconductor device | |
| JP7044142B2 (ja) | リードフレームおよびその製造方法 | |
| CN103021993A (zh) | 引线框架及其制造方法、半导体器件及其制造方法 | |
| JP2014039067A (ja) | 半導体装置 | |
| JP7193284B2 (ja) | リードフレーム及びリードフレームの製造方法 | |
| JP6841550B2 (ja) | リードフレーム及びその製造方法 | |
| JP2020053420A5 (ja) | ||
| JP2011142337A (ja) | 半導体装置の製造方法 | |
| JP2008113021A (ja) | 半導体装置の製造方法 | |
| US12581964B2 (en) | Lead frame, semiconductor device, and lead frame manufacturing method | |
| JP5997964B2 (ja) | リードフレーム | |
| JP4451298B2 (ja) | Icカードモジュール体 | |
| JP6738676B2 (ja) | リードフレーム | |
| JP5884506B2 (ja) | 半導体装置製造用リードフレーム及び半導体装置の製造方法 | |
| JP6705654B2 (ja) | リードフレーム及びその製造方法 | |
| JP5574297B2 (ja) | リードフレームの製造方法 | |
| US20180166368A1 (en) | Lead frame | |
| JP6150469B2 (ja) | リードフレームの製造方法 | |
| CN119108368A (zh) | 封装半导体器件和制造方法 | |
| JP2004031775A (ja) | リードフレーム及びその製造方法 | |
| TW201841271A (zh) | 引線框架的製造方法及引線框架 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20180209 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20180215 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190925 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200804 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200811 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200828 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200915 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200930 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6772087 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |