JP6772087B2 - リードフレーム及びその製造方法 - Google Patents
リードフレーム及びその製造方法 Download PDFInfo
- Publication number
- JP6772087B2 JP6772087B2 JP2017028221A JP2017028221A JP6772087B2 JP 6772087 B2 JP6772087 B2 JP 6772087B2 JP 2017028221 A JP2017028221 A JP 2017028221A JP 2017028221 A JP2017028221 A JP 2017028221A JP 6772087 B2 JP6772087 B2 JP 6772087B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- VUCAVCCCXQVHAN-UHFFFAOYSA-L azane dichlorocopper Chemical compound N.Cl[Cu]Cl VUCAVCCCXQVHAN-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Thermal Sciences (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
図2〜図8は実施形態のリードフレームを説明するための図、図9〜図13は実施形態のリードフレームの製造方法を説明するための図である。
Claims (10)
- 矩形状の外枠と、
前記外枠の一方の面から側面にかけて形成された凹部と、
前記外枠の他方の面から側面にかけて形成された切欠段差部と
を有し、
前記凹部の側壁と前記側面とが接する部分が曲面状であることを特徴とするリードフレーム。 - 前記切欠段差部は、前記外枠の長手方向の前記側面の一端から他端まで一体的に形成されていることを特徴とする請求項1に記載のリードフレーム。
- 前記凹部は所定の間隔を空けて並んで配置されており、
前記凹部同士の間の前記側面の端は、平面視で平坦部となっていることを特徴とする請求項1又は2に記載のリードフレーム。 - 前記凹部及び前記切欠段差部は、前記外枠の長手方向の両側の前記側面にそれぞれ形成されていることを特徴とする請求項1乃至3のいずれか一項に記載のリードフレーム。
- 前記凹部及び前記切欠段差部の各内面は、凹状曲面となっていることを特徴とする請求項1乃至4のいずれか一項に記載のリードフレーム。
- 複数のフレーム領域が区画された金属板を用意する工程と、
前記金属板の両面側の前記フレーム領域に、フレーム部材を得るためのレジスト層をそれぞれパターニングする工程と、
前記レジスト層をマスクにして前記金属板を両面側からウェットエッチングすることにより、矩形状の外枠と、前記外枠の一方の面から側面にかけて形成される凹部と、前記外枠の他方の面から側面にかけて形成される切欠段差部とを含むフレーム部材を前記複数のフレーム領域に形成する工程と、
前記レジスト層を除去する工程と、
前記複数のフレーム領域に配置された前記フレーム部材を分離して、個々のリードフレームを得る工程とを有し、
前記凹部の側壁と前記側面とが接する部分が曲面状に形成されることを特徴とするリードフレームの製造方法。 - 前記レジスト層を形成する工程において、
前記金属板の一方の面に形成される前記レジスト層は、外枠パターンと、前記外枠パターンの側面に配置された切欠部とを含み、前記凹部は前記レジスト層の切欠部に対応して形成され、
平面視で前記切欠部の側壁と前記外枠パターンの側面とが接する角度が90°を超えて135°以下に設定されることを特徴とする請求項6に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記切欠段差部は、前記外枠の長手方向の前記側面の一端から他端まで一体的に形成されることを特徴とする請求項6又は7に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記凹部同士の間の側面の端が平面視で平坦部となって形成されることを特徴とする請求項6乃至8のいずれか一項に記載のリードフレームの製造方法。 - 前記フレーム部材を形成する工程において、
前記凹部及び前記切欠段差部は、前記外枠の長手方向の両側の前記側面にそれぞれ形成されることを特徴とする請求項6乃至9のいずれか一項に記載のリードフレームの製造方法。
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US15/880,011 US10201917B2 (en) | 2017-02-17 | 2018-01-25 | Lead frame |
TW107103839A TWI733981B (zh) | 2017-02-17 | 2018-02-02 | 導線架 |
CN201810135204.4A CN108461470B (zh) | 2017-02-17 | 2018-02-09 | 引线框架 |
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US11393774B2 (en) * | 2019-08-21 | 2022-07-19 | Stmicroelectronics, Inc. | Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads |
US11211320B2 (en) * | 2019-12-31 | 2021-12-28 | Texas Instruments Incorporated | Package with shifted lead neck |
JP7292776B2 (ja) * | 2020-01-30 | 2023-06-19 | 大口マテリアル株式会社 | リードフレーム |
CN114062076A (zh) * | 2021-11-04 | 2022-02-18 | 九江德福科技股份有限公司 | 一种用于铜箔晶体分析的样品制备方法 |
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