TWI531086B - An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element - Google Patents

An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element Download PDF

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Publication number
TWI531086B
TWI531086B TW102111965A TW102111965A TWI531086B TW I531086 B TWI531086 B TW I531086B TW 102111965 A TW102111965 A TW 102111965A TW 102111965 A TW102111965 A TW 102111965A TW I531086 B TWI531086 B TW I531086B
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TW
Taiwan
Prior art keywords
convex
uneven structure
concave
substrate
convex portion
Prior art date
Application number
TW102111965A
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English (en)
Chinese (zh)
Other versions
TW201344959A (zh
Inventor
古池潤
三田村哲理
山口布士人
Original Assignee
旭化成電子材料股份有限公司
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Publication of TW201344959A publication Critical patent/TW201344959A/zh
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Publication of TWI531086B publication Critical patent/TWI531086B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
TW102111965A 2012-04-02 2013-04-02 An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element TWI531086B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2012084208 2012-04-02
JP2012103490 2012-04-27
JP2012103489 2012-04-27
JP2012227295 2012-10-12
JP2012267488 2012-12-06
JP2012267377 2012-12-06
JP2012280241 2012-12-21

Publications (2)

Publication Number Publication Date
TW201344959A TW201344959A (zh) 2013-11-01
TWI531086B true TWI531086B (zh) 2016-04-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102111965A TWI531086B (zh) 2012-04-02 2013-04-02 An optical substrate, a semiconductor light-emitting element, and a semiconductor light-emitting element

Country Status (10)

Country Link
US (1) US9614136B2 (enExample)
EP (5) EP2942819A1 (enExample)
JP (1) JP6235459B2 (enExample)
KR (2) KR101763460B1 (enExample)
CN (1) CN104205370B (enExample)
BR (1) BR112014024516A2 (enExample)
IN (1) IN2014MN01916A (enExample)
RU (1) RU2604568C2 (enExample)
TW (1) TWI531086B (enExample)
WO (1) WO2013150984A1 (enExample)

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Also Published As

Publication number Publication date
RU2604568C2 (ru) 2016-12-10
US20150048380A1 (en) 2015-02-19
EP2835836A4 (en) 2015-08-05
US9614136B2 (en) 2017-04-04
KR101862500B1 (ko) 2018-05-29
KR101763460B1 (ko) 2017-07-31
TW201344959A (zh) 2013-11-01
BR112014024516A2 (pt) 2017-07-25
CN104205370A (zh) 2014-12-10
EP2942820A1 (en) 2015-11-11
IN2014MN01916A (enExample) 2015-07-10
KR20140133867A (ko) 2014-11-20
EP2942822A1 (en) 2015-11-11
EP2942819A1 (en) 2015-11-11
RU2014144362A (ru) 2016-05-27
JPWO2013150984A1 (ja) 2015-12-17
CN104205370B (zh) 2017-03-22
WO2013150984A1 (ja) 2013-10-10
EP2835836B1 (en) 2019-06-19
KR20160148052A (ko) 2016-12-23
EP2942821A1 (en) 2015-11-11
EP2835836A1 (en) 2015-02-11
JP6235459B2 (ja) 2017-11-22

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